KR20000003435A - Photoresist eliminating method using mixed organic solvent - Google Patents
Photoresist eliminating method using mixed organic solvent Download PDFInfo
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- KR20000003435A KR20000003435A KR1019980024677A KR19980024677A KR20000003435A KR 20000003435 A KR20000003435 A KR 20000003435A KR 1019980024677 A KR1019980024677 A KR 1019980024677A KR 19980024677 A KR19980024677 A KR 19980024677A KR 20000003435 A KR20000003435 A KR 20000003435A
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- photoresist
- organic solvent
- mixed organic
- eliminating method
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
본 발명은 반도체 제조공정중 포토마스크 공정에 관한 것으로, 특히 혼합 유기용매를 이용하여 마스크 재작업시나 식각공정후에 포토레지스트를 제거하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask process in a semiconductor manufacturing process, and more particularly, to a method of removing photoresist during a mask rework or after an etching process using a mixed organic solvent.
현재의 포토레지스트의 습식 제거방법으로는 트랙장비를 변형시켜 제거제로서 시너(Thinner)를 공급하여 처리하는 간단한 방법이 사용되고 있다. 이러한 방법은 시너 단일용매만을 사용하므로 시간이 절약되고 간편하며 포토레지스트 도포막을 효과적으로 제거하지만 공정을 거치면서 전자빔이 투사되었던 지역이나 장시간 경과된 포토레지스트막은 완전히 제거되지 못하고 웨이퍼상에 수지(Resin)와 포토레지스트 잔류물이 남는 문제를 발생시킨다. 이와 같이 잔류되는 수지등은 결함으로 작용하여 불순물입자를 유발시키거나 패턴사이의 브릿지를 발생시켜 수율을 감소시키는 원인이 된다.As a current wet removal method of photoresist, a simple method of modifying track equipment and supplying and treating thinner as a removal agent is used. This method saves time and is simple because only a thinner solvent is used, and effectively removes the photoresist coating film, but the area where the electron beam was projected or the photoresist film that has elapsed for a long time cannot be completely removed. This creates the problem of remaining photoresist residues. Residual resins and the like act as defects to cause impurity particles or to generate bridges between patterns, thereby reducing the yield.
또다른 포토레지스트 제거방법으로 O2플라즈마를 이용한 건식방법이 사용되고 있으나, 습식방법에 비하여 방법이 복잡하고 시간이 많이 소요되며 장비내 챔버의 오염방지를 위한 웨이퍼의 서브레이어(sublayer) 의존성이 높아 장비를 구분하여 사용하여야 하는 문제점이 있다. 이로 인해 사용자의 장비 운용 미숙으로 인한 공정상의 사고가 발생할 가능성이 높고, 고가 장비 구매 및 운용으로 제조비용이 상승되는 문제점도 안고 있다.The dry method using O 2 plasma is used as another method of removing photoresist, but the method is more complicated and time consuming than the wet method, and the wafer has high dependence on the sublayer to prevent contamination of the chamber in the equipment. There is a problem that must be used separately. Due to this, there is a high possibility that a process accident may occur due to the user's inexperienced operation of the equipment, and the manufacturing cost increases due to the purchase and operation of expensive equipment.
본 발명은 상술한 문제점을 해결하기 위한 것으로, 용해도가 높고 서로 친화력이 우수하여 혼합이 잘되는 두가지 종류의 유기용매를 사용하여 포토레지스트 간단하게 제거한다.The present invention is to solve the above-mentioned problems, the photoresist is easily removed by using two types of organic solvents that are well mixed so that they have high solubility and excellent affinity.
도 1은 본 발명에 의한 포토레지스트 제거방법에 이용되는 유기용매 도포장치를 나타낸 도면,1 is a view showing an organic solvent coating apparatus used in the photoresist removing method according to the present invention,
도 2는 본 발명에 의한 혼합 유기용매의 구조도,2 is a structural diagram of a mixed organic solvent according to the present invention,
도 3은 i-라인용 포토레지스트와 혼합 유기용매와의 반응성을 나타낸 도면,3 is a view showing the reactivity of an i-line photoresist with a mixed organic solvent,
도 4는 DUV용 포토레지스트와 혼합 유기용매와의 반응성을 나타낸 도면.4 is a view showing the reactivity of a DUV photoresist with a mixed organic solvent.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
2.웨이퍼 3.시너용 로보트 아암2.Waper 3.Robot Arm for Thinner
4.시너용 노즐 5.혼합 유기용매용 로보트 아암4.Nozzle for thinner 5.Robot arm for mixed organic solvent
6.혼합 유기용매용 노즐6. Nozzle for Mixed Organic Solvents
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명은 시너 단일용매를 사용할때의 문제점을 보완하기 위해 용해도가 높고 서로 친화력이 우수하여 혼합이 잘되는 두가지 종류의 유기용매를 사용하여 포토레지스트를 제거한다. 상기 유기용매로는 포토레지스트내의 성분중 알콜계인 수지와 PAC(산 감광제)와 반응성이 좋고 PAG(산 발생제)와 용해도(solubility)가 우수한 DPM(Dipropylene glycol dimethyl ether)과 산화제 역할을 하는 NMP(N-methyl Pyrrolidinone)을 DPM 20-30%, NMP 70-80%의 부피비, 즉, 1:4 정도의 부피비로 혼합하여 사용한다. 상기 두 유기용매는 서로 잘 혼합되므로 간편하게 제조된다.The present invention removes the photoresist by using two kinds of organic solvents that are well mixed with each other and have high solubility and good affinity to compensate for the problem of using a thinner single solvent. The organic solvent is a dipropylene glycol dimethyl ether (DPM) and an oxidizing agent having excellent reactivity with alcohol-based resins and PAC (acid photosensitizers), PAG (acid generators), and solubility among the components in the photoresist. N-methyl Pyrrolidinone) is used by mixing at a volume ratio of 20-30% DPM and 70-80% NMP, that is, about 1: 4. The two organic solvents are easily prepared because they are mixed well with each other.
NMP의 끓는점은 81-82℃, DPM의 끓는점은 90-91℃로 모두 끓는점이 높아 안정하며 휘발성이 좋고, 도 2에 나타낸 바와 같이 DPM은 수산화기를 가진 사슬형 구조(chain structure)로 되어 있어 포토레지스트 성분중 알콜계인 수지와 PAC와의 반응성이 좋아 잘 용해된다. 또한, PAG와의 용해도도 우수하여 포토레지스트 스트립후 잔류하는 잔유물을 제거하는 능력이 우수하다.The boiling point of NMP is 81-82 ° C., and the boiling point of DPM is 90-91 ° C., all of which have a high boiling point, which is stable and volatile. As shown in FIG. 2, DPM has a chain structure having a hydroxyl group. The reactivity of alcohol-based resin and PAC in the resist component is good so that it dissolves well. In addition, the solubility with PAG is excellent, and the ability to remove the residue remaining after the photoresist strip is excellent.
NMP는 도 2와 같이 한쌍의 비공유 전자쌍을 가지고 있어 산화제 작용을 하며, 전자빔에 노출되어 경화된 포토레지스트의 결합을 약화시켜 반응이 잘 일어나게 도와주는 약한 베이스(weak base)이다.NMP has a pair of non-covalent electron pairs as shown in FIG. 2 and acts as an oxidizing agent, and is a weak base that weakens the bonding of the photoresist cured by exposure to the electron beam to facilitate the reaction.
상기와 같이 혼합된 유기용매를 도 1에 나타낸 바와 같은 기존의 시너 스트리퍼(thinner stripper)의 화학 캐비넷에 넣고 노즐(6)을 통해 웨이퍼(2)상의 포토레지스트에 도포한다.The mixed organic solvent as described above is placed in a chemical cabinet of a conventional thinner stripper as shown in FIG. 1 and applied to the photoresist on the wafer 2 through the nozzle 6.
본 발명에 의한 혼합 유기용매를 이용한 포토레지스트 제거방법은 포토레지스트가 도포된 웨이퍼에 시너를 도포하여 1차로 포토레지스트를 제거한 후, 혼합 유기용매를 2차로 도포하여 웨이퍼상의 잔류 포토레지스트성분을 완전히 제거한다.In the photoresist removal method using the mixed organic solvent according to the present invention, a thinner is first applied to the wafer to which the photoresist is applied to remove the photoresist, and then the mixed organic solvent is secondarily applied to completely remove the residual photoresist component on the wafer. do.
도 1에 나타낸 시너 스트리퍼에서 참조부호 3은 시너용 로보트 아암, 4는 시너용 노즐, 5는 혼합 유기용매용 로보트 아암을 각각 나타낸다.In the thinner stripper shown in Fig. 1, reference numeral 3 denotes a robot arm for thinner, 4 denotes a nozzle for thinner, and 5 denotes a robot arm for mixed organic solvent.
본 발명에 적용되는 상기 혼합 유기용매는 도 3에 나타낸 바와 같이 노볼락 수지(novolac resin)계인 i-라인용 포토레지스트의 작용기들과의 반응이 우수하며, 또한 도 4에 나타낸 바와 같이 t-Boc 수지계인 DUV용 포토레지스트의 작용기들과의 반응도 우수하여 포토레지스트의 종류와 관계없이 포토레지스트를 제거할 수 있어 적용범위가 넓으며, 유기용매를 사용하므로 세정효과까지 얻을 수 있다.The mixed organic solvent applied to the present invention is excellent in reaction with functional groups of the photoresist for i-line, which is a novolac resin system, as shown in FIG. 3, and also t-Boc as shown in FIG. 4. Resin-based photoresist for DUV photoresist is also excellent in reaction with the functional group can be removed regardless of the photoresist regardless of the type of photoresist, the use of an organic solvent can be obtained cleaning effect.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary knowledge.
이상 상술한 바와 같이 본 발명은 반응성이 우수한 혼합 유기용매를 사용하여 포토레지스트내의 성분인 수지, PAG, PAC와 화학적으로 반응시켜 포토레지스트를 제거함으로써 간단하게 잔류수지와 포토레지스트 잔류물을 완전히 제거할 수 있다.As described above, the present invention uses a mixed organic solvent having excellent reactivity to chemically react with resin, PAG, and PAC, which are components in the photoresist, to remove the photoresist, thereby completely removing residual resin and photoresist residue. Can be.
또한, 기존의 장비를 사용함으로써 장비 구매등의 추가비용없이 본 발명을 적용할 수 있으며, 빠르게 완전하게 포토레지스트를 제거할 수 있어 제조 비용을 낮출 수 있다.In addition, by using the existing equipment can be applied to the present invention without the additional cost, such as equipment purchase, it is possible to quickly remove the photoresist completely can lower the manufacturing cost.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980024677A KR20000003435A (en) | 1998-06-29 | 1998-06-29 | Photoresist eliminating method using mixed organic solvent |
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| KR1019980024677A KR20000003435A (en) | 1998-06-29 | 1998-06-29 | Photoresist eliminating method using mixed organic solvent |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100360985B1 (en) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | Resist stripper composition |
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1998
- 1998-06-29 KR KR1019980024677A patent/KR20000003435A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100360985B1 (en) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | Resist stripper composition |
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