KR19990009793A - Temperature Compensation Dielectric Ceramic Composition - Google Patents
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Abstract
본 발명은 티탄산바륨(BaTiO3) 14.78∼15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 75.46∼78.78 중량%, 산화티탄(TiO2) 4.06∼6.17 중량%, 산화규소(SiO2) 0.15∼0.23 중량%, 산화지르코늄(ZrO2) 1.42∼2.24 중량%, 산화주석(SnO2) 0.10∼2.42 중량%를 기본 구성물로 갖는 온도보상용계 유전체 자기조성물에 관한 것으로서, 상기 유전체 자기조성물의 유전율이 60 이상, 1300℃ 이하의 온도에서 소결이 가능하고, -55∼125℃의 사용온도 범위 내에서 온도계수가 0±30ppm/℃인 COG 특성을 만족하며, 온도의 변화에 따라 정전용량 및 주파수의 변화가 거의 없는 온도 보상용 소형 적층 자기 콘덴서 및 고주파 유전체의 재료로 사용되는 온도보상용계 유전체 자기 조성물에 관한 것이다.The present invention is 14.78 to 15.78% by weight of barium titanate (BaTiO 3 ), 75.46 to 78.78% by weight of neodymium titanate (2Nd 2 O 3 · 5TiO 2 ), 4.06 to 6.17% by weight of titanium oxide (TiO 2 ), silicon oxide (SiO 2 ) A temperature compensating dielectric dielectric composition comprising 0.15 to 0.23 wt%, zirconium oxide (ZrO 2 ) 1.42 to 2.24 wt%, and tin oxide (SnO 2 ) 0.10 to 2.42 wt% as a basic component. It is possible to sinter at the dielectric constant of 60 or more and 1300 ℃ or less, and satisfies the COG characteristic with the temperature coefficient of 0 ± 30ppm / ℃ within the operating temperature range of -55 ~ 125 ℃. The present invention relates to a temperature-compensated dielectric ceramic composition used as a material for a small multilayer magnetic capacitor for temperature compensation and a high frequency dielectric having little change in frequency.
Description
본 발명은 온도보상용계 유전체 자기 조성물에 관한 것으로서, 특히 온도 보상용 소형 적층 자기 콘덴서 및 고주파 유전체의 재료로 사용되는 온도보상용계 유전체 자기 조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a temperature compensating dielectric ceramic composition, and more particularly, to a temperature compensating dielectric ceramic composition used as a material for a temperature compensation small multilayer magnetic capacitor and a high frequency dielectric.
상기 온도보상용계 유전체 자기 조성물이라 함은 -55∼125℃의 사용온도 범위 내에서 온도계수가 0±30ppm/℃인 COG 특성을 만족시키는 물질이다.The temperature compensating dielectric ceramic composition is a material that satisfies a COG characteristic having a temperature coefficient of 0 ± 30 ppm / ° C. within a use temperature range of −55 to 125 ° C.
종래의 유전체 자기 조성물은 산화네오듐(Nd2O3), 티탄산마그네슘(MgTiO3), 티탄산칼슘(CaTiO3), 티탄산바륨(BaTiO3), 산화비스무스(Bi2O3), 산화티탄(TiO2)등으로 조성된 유전체가 사용되었다.Conventional dielectric ceramic compositions include neodymium oxide (Nd 2 O 3 ), magnesium titanate (MgTiO 3 ), calcium titanate (CaTiO 3 ), barium titanate (BaTiO 3 ), bismuth oxide (Bi 2 O 3 ), titanium oxide (TiO) 2 ) a dielectric composed of a lamp was used.
그러나 상기와 같이 조성된 종래의 유전체 자기 조성물은 사용온도 내에서 안정된 정전용량 변화율을 갖는 반면, 1,300℃ 이상의 높은 소결온도를 갖고, 콘덴서의 제조시 내부전극과의 반응성이 낮아지는 문제점이 있었다.However, the conventional dielectric ceramic composition prepared as described above has a stable capacitance change rate within the use temperature, but has a high sintering temperature of 1,300 ° C. or higher, and has a problem in that reactivity with an internal electrode is lowered when the capacitor is manufactured.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 유전율이 60 이상, 1,300℃ 이하의 온도에서 소결이 가능하고, -55∼125℃의 사용온도 범위 내에서 온도계수가 0±30ppm/℃인 COG 특성을 만족하는 온도보상용계 유전체 자기 조성물을 제조함에 그 목적이 있다.The present invention has been made in order to solve the above problems, the dielectric constant is 60 or more, sintering is possible at a temperature of 1,300 ℃ or less, the temperature coefficient of 0 ± 30ppm / ℃ within the operating temperature range of -55 ~ 125 ℃ The purpose of the present invention is to prepare a temperature compensation dielectric ceramic composition that satisfies the COG characteristics.
본 발명은 티탄산바륨(BaTiO3) 14.78∼15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 75.46∼78.78 중량%, 산화티탄(TiO2) 4.06∼6.17 중량%, 산화규소(SiO2) 0.15∼0.23 중량%, 산화지르코늄(ZrO2) 1.42∼2.24 중량%, 산화주석(SnO2) 0.10∼2.42 중량%로 조성된 온도보상용계 유전체 자기 조성물에 관한 것이다.The present invention is 14.78 to 15.78% by weight of barium titanate (BaTiO 3 ), 75.46 to 78.78% by weight of neodymium titanate (2Nd 2 O 3 · 5TiO 2 ), 4.06 to 6.17% by weight of titanium oxide (TiO 2 ), silicon oxide (SiO 2 ) A temperature compensation type dielectric ceramic composition comprising 0.15 to 0.23% by weight, zirconium oxide (ZrO 2 ) 1.42 to 2.24% by weight, and tin oxide (SnO 2 ) 0.10 to 2.42% by weight.
표1을 참조하여 본 발명의 실시예를 설명하면 다음과 같다. 티탄산바륨(BaTiO3) 14.78∼15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 75.46∼78.78 중량%, 산화티탄(TiO2) 4.06∼6.17 중량%, 산화규소(SiO2) 0.15∼0.23 중량%, 산화지르코늄(ZrO2) 1.42∼2.24 중량%, 산화주석(SnO2) 0.10∼2.42 중량%를 각각의 범위 내에서 칭량한다. 칭량된 조성물을 결합제인 바인더와 50∼65 : 35∼50의 비율로 밀링(Milling) 방법을 이용해 습식 혼합 분쇄한다. 분쇄된 분말로 그린시트(Green Sheet)를 제작한 다음, 내부전극을 인쇄하고 압착하여 절단한 후 바인더를 제거하여 1,260℃∼1,300℃에서 소결한다. 이렇게 소결된 유전체에 800℃이하의 온도에서 외부전극을 소부하고 유전율, 품질계수, 절연저항, 온도계수를 측정한 결과 유전율은 60∼64, 품질계수는 1,400∼1,800, 절연저항은 106MΩ이상, 온도계수는 19∼30ppm/℃인 특성을 나타냈다.Referring to Table 1, an embodiment of the present invention will be described. Barium titanate (BaTiO 3) 14.78~15.78% by weight titanate, neodymium oxide (2Nd 2 O 3 · 5TiO 2 ) 75.46~78.78 % by weight of titanium (TiO 2) 4.06~6.17%, silicon oxide (SiO 2) 0.15 parts by weight oxidized the ~0.23% by weight, zirconium (ZrO 2) 1.42~2.24% by weight oxide, tin oxide (SnO 2) 0.10~2.42% by weight was weighed in each range. The weighed composition is wet mixed and pulverized with a binder as a binder at a ratio of 50 to 65:35 to 50 using the milling method. After manufacturing green sheet from the pulverized powder, the internal electrode is printed, pressed and cut, and then the binder is removed and sintered at 1,260 ° C to 1,300 ° C. The sintered dielectric was baked at an temperature of 800 ℃ or below, and the dielectric constant, quality coefficient, insulation resistance, and temperature coefficient were measured. The dielectric constant was 60-64, the quality coefficient was 1,400-1,800, and the insulation resistance was 10 6 MΩ or more. And the temperature coefficient showed the characteristic of 19-30 ppm / degreeC.
실시예 1Example 1
티탄산바륨(BaTiO3) 14.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 78.78 중량%, 산화티탄(TiO2) 4.06 중량%, 산화규소(SiO2) 0.23 중량%, 산화지르코늄(ZrO2) 1.42 중량%, 산화주석(SnO2) 0.73 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,280℃에서 상기의 방법으로 제조한 결과, 유전율은 60, 품질계수는 1,500, 절연저항은 106MΩ이상, 온도계수는 20ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 14.78% by weight, titanate oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 78.78%, titanium dioxide by weight (TiO 2) 4.06% by weight, silicon oxide (SiO 2) 0.23% by weight, zirconium oxide ( ZrO 2 ) 1.42% by weight, tin oxide (SnO 2 ) 0.73% by weight as a component of the composition was prepared by the above method at the sintering temperature of 1,280 ℃ as a constituent dielectric ceramic composition, the dielectric constant is 60, the quality factor is 1,500, The insulation resistance was over 10 6 MΩ and the temperature coefficient was 20 ppm / ℃.
실시예 2Example 2
티탄산바륨(BaTiO3) 14.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 77.97 중량%, 산화티탄(TiO2) 4.06 중량%, 산화규소(SiO2) 0.23 중량%, 산화지르코늄(ZrO2) 1.42 중량%, 산화주석(SnO2) 1.54 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,280℃에서 상기의 방법으로 제조한 결과, 유전율은 62, 품질계수는 1,600, 절연저항은 106MΩ이상, 온도계수는 25ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 14.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 77.97%, titanium dioxide by weight (TiO 2) 4.06% by weight, silicon oxide (SiO 2) 0.23% by weight, zirconium oxide ( ZrO 2 ) 1.42% by weight, tin oxide (SnO 2 ) 1.54% by weight as a component of the composition was prepared by the above method at the sintering temperature of 1,280 ℃ sintering temperature, dielectric constant is 62, quality factor is 1,600, The insulation resistance was 10 6 MΩ or more and the temperature coefficient was 25 ppm / ° C.
실시예 3Example 3
티탄산바륨(BaTiO3) 14.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 77.09 중량%, 산화티탄(TiO2) 4.06 중량%, 산화규소(SiO2) 0.23 중량%, 산화지르코늄(ZrO2) 1.42 중량%, 산화주석(SnO2) 2.42 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,280℃에서 상기의 방법으로 제조한 결과, 유전율은 64, 품질계수는 1,800, 절연저항은 106MΩ이상, 온도계수는 30ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 14.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 77.09%, titanium dioxide by weight (TiO 2) 4.06% by weight, silicon oxide (SiO 2) 0.23% by weight, zirconium oxide ( ZrO 2 ) 1.42% by weight, tin oxide (SnO 2 ) 2.42% by weight of the composition for the composition of the dielectric ceramic composition was prepared by the above method at the sintering temperature of 1,280 ℃, the dielectric constant is 64, the quality factor is 1,800, The insulation resistance was 10 6 MΩ or more and the temperature coefficient was 30 ppm / ℃.
실시예 4Example 4
티탄산바륨(BaTiO3) 14.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 78.74 중량%, 산화티탄(TiO2) 4.76 중량%, 산화규소(SiO2) 0.20 중량%, 산화지르코늄(ZrO2) 1.42 중량%, 산화주석(SnO2) 0.10 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1.300℃에서 상기의 방법으로 제조한 결과, 유전율은 62, 품질계수는 1,400, 절연저항은 106MΩ이상, 온도계수는 19ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 14.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 78.74 % by weight of titanium (TiO 2) 4.76% by weight, silicon oxide (SiO 2) 0.20% by weight, zirconium oxide ( ZrO 2 ) 1.42% by weight, tin oxide (SnO 2 ) 0.10% by weight as a component of the composition was prepared by the above method at the sintering temperature of 1.300 ℃ as a constituent of the dielectric ceramic composition, the dielectric constant is 62, quality factor is 1,400, The insulation resistance was 10 6 MΩ or more and the temperature coefficient was 19 ppm / ℃.
실시예 5Example 5
티탄산바륨(BaTiO3) 15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 76.22 중량%, 산화티탄(TiO2) 5.46 중량%, 산화규소(SiO2) 0.20 중량%, 산화지르코늄(ZrO2) 2.24 중량%, 산화주석(SnO2) 0.10 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,300℃에서 상기의 방법으로 제조한 결과, 유전율은 61, 품질계수는 1,500, 절연저항은 106MΩ이상, 온도계수는 17ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 15.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 76.22%, titanium dioxide by weight (TiO 2) 5.46% by weight, silicon oxide (SiO 2) 0.20% by weight, zirconium oxide ( ZrO 2 ) 2.24% by weight, tin oxide (SnO 2 ) 0.10% by weight as a component of the composition was prepared by the above method at the sintering temperature of 1300 ℃ sintering temperature dielectric ceramic composition, the dielectric constant is 61, the quality factor is 1,500, the insulation resistance 10 MΩ or more 6, the temperature coefficient exhibited characteristics 17ppm / ℃.
실시예 6Example 6
티탄산바륨(BaTiO3) 15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 75.56 중량%, 산화티탄(TiO2) 6.17 중량%, 산화규소(SiO2) 0.15 중량%, 산화지르코늄(ZrO2) 2.24 중량%, 산화주석(SnO2) 0.10 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 유전율은 63, 품질계수는 1,700, 절연저항은 106MΩ이상, 온도계수는 20ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 15.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 75.56%, titanium dioxide by weight (TiO 2) 6.17% by weight, silicon oxide (SiO 2) 0.15% by weight, zirconium oxide ( ZrO 2 ) 2.24% by weight, tin oxide (SnO 2 ) 0.10% by weight as a component of the composition was prepared by the above method at a sintering temperature of 1,260 ℃ as a constituent dielectric ceramic composition, the dielectric constant is 63, the quality factor is 1,700, The insulation resistance was over 10 6 MΩ and the temperature coefficient was 20 ppm / ℃.
실시예 7Example 7
티탄산바륨(BaTiO3) 15.78 중량%, 티탄산 산화네오듐(2Nd2O3·5TiO2) 75.46 중량%, 산화티탄(TiO2) 6.17 중량%, 산화규소(SiO2) 0.15 중량%, 산화지르코늄(ZrO2) 2.24 중량%, 산화주석(SnO2) 0.20 중량%를 구성 성분으로 갖는 온도보상용계 유전체 자기 조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 유전율은 60, 품질계수는 1,600, 절연저항은 106MΩ이상, 온도계수는 27ppm/℃인 특성을 나타냈다.Barium titanate (BaTiO 3) 15.78% by weight of titanic oxide neodymium (2Nd 2 O 3 · 5TiO 2 ) 75.46%, titanium dioxide by weight (TiO 2) 6.17%, a silicon oxide by weight (SiO 2) 0.15% by weight, and zirconium oxide ( ZrO 2 ) 2.24 wt% tin oxide (SnO 2 ) 0.20 wt% as a constituent of the composition was prepared by the above method at the sintering temperature of 1260 ° C. The dielectric constant is 60, the quality factor is 1,600, The insulation resistance was 10 6 MΩ or more and the temperature coefficient was 27 ppm / ° C.
본 발명에 의한 상기 온도보상용계 유전체 자기 조성물은 60이상의 유전율을 갖고, 1,300℃ 이하의 소결온도를 갖고 있으며, -55∼125℃의 사용온도 범위 내에서 온도계수가 0±30ppm/℃인 COG 특성을 만족하므로 고신뢰성의 온도보상용 소형 적층 자기 콘덴서 및 고주파 유전체의 제조를 가능하게 하는 효과가 있다.The temperature compensation dielectric ceramic composition according to the present invention has a dielectric constant of 60 or more, has a sintering temperature of 1,300 ° C. or less, and exhibits COG characteristics having a temperature coefficient of 0 ± 30 ppm / ° C. within a temperature range of -55 to 125 ° C. Since it is satisfactory, there is an effect of enabling the manufacture of a high reliability small temperature compensation magnetic capacitor and a high frequency dielectric.
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KR100352245B1 (en) * | 1999-10-19 | 2002-09-12 | 티디케이가부시기가이샤 | Dielectric Ceramic Composition and Electronic Device |
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KR100352245B1 (en) * | 1999-10-19 | 2002-09-12 | 티디케이가부시기가이샤 | Dielectric Ceramic Composition and Electronic Device |
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