KR19980050129A - Ultraviolet photosensitive film copolymer and its manufacturing method - Google Patents

Ultraviolet photosensitive film copolymer and its manufacturing method Download PDF

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KR19980050129A
KR19980050129A KR1019960068907A KR19960068907A KR19980050129A KR 19980050129 A KR19980050129 A KR 19980050129A KR 1019960068907 A KR1019960068907 A KR 1019960068907A KR 19960068907 A KR19960068907 A KR 19960068907A KR 19980050129 A KR19980050129 A KR 19980050129A
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photosensitive film
flask
aliphatic cyclic
ultraviolet
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KR100228771B1 (en
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정재창
복철규
백기호
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김영환
현대전자산업 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F218/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid
    • C08F218/02—Esters of monocarboxylic acids
    • C08F218/04—Vinyl esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/02—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings
    • C08F232/04—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having no condensed rings having one carbon-to-carbon double bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/06—Oxidation

Abstract

본 발명은 원자외선용 감광막 공중합체 및 그 제조방법에 관한 것으로, 비닐레네카보네이트와 지방족환형비닐기가 중합된 원자외선용 감광막 공중합체의 제조방법에 있어서, 상기 지방족환형비닐기를 용매가 들어있는 플라스크에 넣고 교반시키고, 상기 플라스크에 비닐레네카보네이트를 주입한 다음, 상기 플라스크에 개시제를 일정량 주입하고, 상기 플라스크를 질소가스분위기로 만들고 밀봉한 다음, 상기 플라스크 내부의 물질을 반응시킴으로써 원자외선용 감광막 공중합체를 형성하여 원자외선을 이용한 리소그래피공정을 가능하게 함으로써 반도체소자의 고집적화를 가능하게 하고 그에 따른 반도체소자의 특성 및 신뢰성을 향상시키는 기술이다.The present invention relates to a far-infrared photosensitive film copolymer and a method of manufacturing the same. In the method for preparing a far-infrared photosensitive film copolymer in which vinylene carbonate and an aliphatic cyclic vinyl group are polymerized, the aliphatic cyclic vinyl group is contained in a flask containing a solvent. Put and stir, inject the vinylene carbonate into the flask, and a certain amount of initiator is injected into the flask, the flask is made of nitrogen gas atmosphere and sealed, and then reacted with the material inside the flask to react with the ultraviolet ray film By forming a to enable the lithography process using the far ultraviolet rays to enable high integration of the semiconductor device, thereby improving the characteristics and reliability of the semiconductor device.

Description

원자외선용 감광막 공중합체 및 그 제조방법Ultraviolet photosensitive film copolymer and its manufacturing method

본 발명은 원자외선용 감광막 공중합체 및 그 제조방법에 관한 것으로, 특히 KrF 레이저 또는 ArF 레이저를 광원으로 하는 1기가(giga)와 4기가 디램(DRAM)에 사용되는 원자외선용 감광막 수지의 합성에 관한 것이다. 반도체 제조의 미세가공 공정에서 고감도를 달성하기 위해, 근래에는 화학증폭형인 원자외선용 감광막이 각광을 받고 있다. 그리고, 상기 원자외선용 감광막은 중합체, 용매, 광산 발생제 및 기타 첨가제로 이루어진다. 그리고, 상기 원자외선용 감광막은 ArF 광원용 감광막으로 사용되기 위해서 ArF 광에 대한 투명성, 식각내성, 2.38% 테트라메틸암모늄하이드록사이드 (Tetra-Methyl Ammonium Hydroxide, 이하에서 TMAH라 함) 수용액으로의 현상 가능여부, 접착성 등의 성질을 만족하는 감광막 수지가 합성된 중합체를 포함해야 한다. 그러나, 상기 ArF 광원용 감광막으로 사용되기 의한 성질을 갖는 중합체를 형성하기가 매우 어렵다. 예를들어 주사슬이 폴리아크릴레이트(poly acrylate)계인 수지의 합성은 쉬우나 식각내성 확보와 현상공정에 문제가 있다. 여기서, 상기 식각내성은 주사슬에 지방족환형 단위(alicyclic unit)를 넣어 증가시킬 수 있으나 주사슬을 모두 지방족환형으로 구성하기가 매우 어렵다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to an ultraviolet ray photosensitive film copolymer and a method for manufacturing the same, and more particularly, to the synthesis of ultraviolet ray photosensitive film resins used in giga and tetravalent DRAMs using KrF or ArF lasers as light sources. It is about. In order to achieve high sensitivity in the microfabrication process of semiconductor manufacturing, in recent years, the chemically amplified-type ultraviolet ray photosensitive film is attracting attention. In addition, the ultraviolet ray photosensitive film is made of a polymer, a solvent, a photoacid generator and other additives. In addition, the far-infrared photosensitive film is developed as a transparency, etching resistance, 2.38% tetra-Methyl Ammonium Hydroxide (hereinafter referred to as TMAH) aqueous solution for ArF light in order to be used as a photoresist for ArF light source. It should include a polymer synthesized with a photoresist resin that satisfies the properties such as availability and adhesion. However, it is very difficult to form a polymer having the property of being used as the photosensitive film for the ArF light source. For example, the synthesis of a polyacrylate-based resin is easy, but there are problems in securing etching resistance and developing process. Here, the etch resistance may be increased by putting an alicyclic unit in the main chain, but it is very difficult to configure all the main chains in the alicyclic type.

화학식 1은 이를 극복하고 지방족환형으로 구성된 감광막 수지를 종래기술로 형성한 것을 도시한다.Formula 1 overcomes this and shows that the photosensitive film resin composed of aliphatic rings is formed in the prior art.

상기 식에서 x,y,z은 중합도를 나타낸다. 여기서, 상기 화학식 1의 A 부분, 즉 안하이드라이드(anhydride) 부분은 지방족 환형 올레핀기(alicyclic olefine group)를 중합시키기 위해 사용된 것이다. 그러나, 상기 안하이드라이드 부분이 비노광시에도 2.38% TMAH에 매우잘 용해되어 터셔리뷰틸(T-butyl)이 들어간 Y 부분의 비율을 매우 증가시킴으로써 상기 안하이드라이드 부분의 용해를 억제하였다. 이때, 상대적으로 Z 부분의 비율이 감소하여 접착력이 저하됨으로써 패터닝(pattenhng) 공정시 웨이퍼로 부터 감광막이 떨어지는 단점이 있다. 이를 해결하기 위하여, 종래기술은 콜레스테롤계의 용해억제제를 2성분계로 주입하였으나 상기와 같이 용해억제제가 주입된 분자구조는 근본적으로 감광막 수지로 사용하기가 어렵다. 상기한 바와같이 종래기술에 따른 원자외선용 감광막 공중합체는, 중합이 어려운 지방족 환형 올레핀 기를 쉽게 중합시키기는 하였으나 분자구조가 안정적이지 못하여 감광막 수지로 사용하지 못하여 반도체소자의 패터닝공정을 어렵게 함으로써 반도체소자의 특성 및 신뢰성을 저하시키고 그에 따른 반도체소자의 고집적화를 어렵게 하는 문제점이 있다.In the above formula, x, y, z represents the degree of polymerization. Here, the A portion, that is, the anhydride portion of the formula (1) is used to polymerize alicyclic olefin group (alicyclic olefine group). However, the anhydride moiety was very well dissolved in 2.38% TMAH even when unexposed, thereby inhibiting the dissolution of the anhydride moiety by greatly increasing the proportion of the Y moiety containing T-butyl. At this time, the ratio of the Z portion is relatively reduced, the adhesive strength is lowered, there is a disadvantage that the photosensitive film is dropped from the wafer during the patterning process (pattenhng). In order to solve this problem, the prior art injects a cholesterol-based dissolution inhibitor into a two-component system, but the molecular structure in which the dissolution inhibitor is injected as described above is difficult to use as a photoresist resin. As described above, the far-infrared photosensitive film copolymer according to the prior art easily polymerizes an aliphatic cyclic olefin group that is difficult to polymerize, but the molecular structure is not stable, thus making it difficult to use the photosensitive film resin, thereby making the semiconductor device patterning process difficult. There is a problem in that the characteristics and reliability of the deterioration and thereby the high integration of the semiconductor device is difficult.

본 발명은 상기한 종래기술의 문제점을 해결하기 위하여, 비닐레네카보네이트와 지방족환형비닐기를 사용가능한 구조로 중합시킴으로써 반도체소자의 고집적화에 적합한 감광막 수지로 사용되는 원자외선용 감광막 공중합체 및 그 제조방법을 제공하는데 그 목적이 있다.The present invention, in order to solve the above problems of the prior art, by polymerizing a vinylene carbonate and aliphatic cyclic vinyl group in a usable structure, an ultraviolet ray photosensitive film copolymer used as a photosensitive film resin suitable for high integration of semiconductor devices and a method of manufacturing the same The purpose is to provide.

이상의 목적을 달성하기 위해 본 발명에 따른 원자외선용 감광막 공중합체의 특징은, 비닐레네카보네이트와 지방족환형비닐기가 중합된 것이다. 이상의 목적을 달성하기위해 본 발명에 따른 원자외선용 감광막 공중합체 제조방법의 특징은, 비닐레네카보네이트와 지방족환형비닐기를 중합된 원자외선용 감광막 공중합체의 제조방법에 있어서, 상기 지방족환형비닐기를 용매가 들어있는 플라스크에 넣고 교반시키는 공정과, 상기 플라스크에 비닐레네카보네이트를 주입하는 공정과, 상기 플라스크에 개시제를 일정량 주입하는 공정과, 상기 플라스크를 질소가스분위기로 만들고 밀봉하는 공정과, 상기 플라스크 내부의 물질을 반응시키는 공정을 포함하는 것이다. 본 발명의 원리는, 두종류 이상의 지방족환형비닐기를 테트라하이드로푸란 (tetrahydrofuran) 용매가 들어있는 플라스크에 넣은 후 교반시키고, 상기 플라스크에 비닐레네카보네이트와 일정비율의 개시제 (radical initialor), 즉 에이.아이.비.엔.(Azobis-Iso-Butyro-Nithle, 이하에서 AIBN 이라 함)을 넣어준 다음, 질소 또는아르곤 가스 분위기로 바꾸어 주고 밀봉하고, 60∼80℃ 정도의 온도에서 8∼12시간 정도 반응시켜 원자외선용 감광막 공중합체를 형성하는 것으로, 3000∼200000 분자량을 갖는 고분자로 형성된다.In order to achieve the above object, the characteristic of the ultraviolet-ray photosensitive film copolymer which concerns on this invention is what polymerizes a vinylene carbonate and an aliphatic cyclic vinyl group. In order to achieve the above object, the ultraviolet ray photosensitive film copolymer production method according to the present invention is characterized in that the vinylene carbonate and the aliphatic cyclic vinyl group polymerized in the ultraviolet ray photosensitive film copolymer manufacturing method, the aliphatic cyclic vinyl group solvent Putting a flask into a flask containing agitation, injecting vinylene carbonate into the flask, injecting a certain amount of an initiator into the flask, making the flask in a nitrogen gas atmosphere, and sealing the inside of the flask. It includes the process of reacting the substance of. The principle of the present invention is that two or more aliphatic cyclic vinyl groups are added to a flask containing a tetrahydrofuran solvent, followed by stirring, and the flask is a radical initialor, ie, A.I. After adding B.N. (Azobis-Iso-Butyro-Nithle, hereinafter referred to as AIBN), change to nitrogen or argon gas atmosphere, seal, and react for 8 to 12 hours at a temperature of about 60 to 80 ° C. To form an ultraviolet ray photosensitive film copolymer, which is formed of a polymer having a molecular weight of 3000 to 200000.

여기서, 상기 중합반응에 사용된 지방족환형비닐기는 하기 화학식 2에 도시된 다수의 지방족환형올레핀기 중에서 선택 사용된 것이다.Here, the aliphatic cyclic vinyl group used in the polymerization reaction is selected from a plurality of aliphatic cyclic olefin groups shown in the following formula (2).

이하, 본 발명의 실시예에 따른 원자외선용 감광막 공중합체를 설명한다.Hereinafter, an ultraviolet ray photosensitive film copolymer according to an embodiment of the present invention will be described.

본 발명은 비닐레네카보네이트를 도입함으로써 중합이 어려운 지방족환형비닐기를 쉽게 중합시킬 수 있고, 접착성 및 2.38 % TMAH 수용액으로 현상이 가능한 수지를 하기 화학식 3와 같이 합성함으로써 원자외선용 감광막 공중합체를 형성하는 것이다. 여기서, 하기 화학식 3는 다수의 지방족환형비닐기 중에서 2-t-부틸카르복실레이트-5-노르보넨기와 2-카르복실산-5-노르보넨기 등과 같이 두종류의 지방족환형비닐기와 비닐레네카르복실기를 반응시켜 원자외선용 감광막 공중합체를 형성한 것이다.The present invention can easily polymerize an aliphatic cyclic vinyl group that is difficult to polymerize by introducing vinylene carbonate, and synthesize a resin capable of developing with an adhesive and 2.38% TMAH aqueous solution as shown in Chemical Formula 3 to form an ultraviolet ray photosensitive film copolymer. It is. Here, the following Chemical Formula 3 includes two aliphatic cyclic vinyl groups and vinylene carboxyl groups, such as 2-t-butylcarboxylate-5-norbornene group and 2-carboxylic acid-5-norbornene group, among a plurality of aliphatic cyclic vinyl groups. To react to form an ultraviolet-ray photosensitive film copolymer.

상기 식에서 x,y 는 중합도를 나타낸다. 그리고, x:y = 0 ∼ 99.9중량%:0∼99.9중량% 의 중합도를 갖는다. 본 발명의 실시예에 따른 원자외선용 감광막 공중합체 형성방법을 구체적으로 설명하면 다음과 같다. 먼저, 상기 화학식 2에 도시된 12 종류의 지방족환형비닐기 중에서 바이싸이클로[2.2.2]옥트-5-엔-2-t-부틸 카르복시레이트기와 바이싸이클로[2.2.2]옥트-5-엔-2-카르복실산기 등과같은 두종류의 지방족환형비닐기를 테트라하이드로푸란 (tetrahydrofuran) 용매가 들어있는 플라스크에 넣은 후 교반시킨다. 그리고, 상기 플라스크에 비닐레네카보네이트를 주입하고 개시제 (radica1 initialor)인 에이.아이.비.엔.(Azobis-Iso-Butyro-Nitrile, 이하에서 AIBN이라 함)을 전체반응물의 0.1∼5 %를 넣은 다음, 상기 플라스크를 질소 또는 아르곤 가스 분위기로 바꾸어 주고 밀봉한다. 여기서, 상기 개시제는 일반적인 래디칼 (radical) 개시제를 사용할 수도 있다. 그 다음에, 상기 플라스크를 60∼130C 정도의 온도로 유지하며 4∼24시간 정도 반응시켜 원자외선용 감광막 공중합체를 형성한다. 여기서, 상기 지방족환형비닐기는 상기 화학식 2에 도시된 다수의 지방 족환형올레핀기 중에서 다른 지방족환형비닐기를 선택하여 사용할 수도 있다.In the formula, x, y represents the degree of polymerization. And x: y = 0 to 99.9% by weight: has a degree of polymerization of 0 to 99.9% by weight. Hereinafter, a method of forming a photosensitive film copolymer for ultraviolet rays according to an embodiment of the present invention will be described in detail. First, the bicyclo [2.2.2] oct-5-ene-2-t-butyl carboxylate group and the bicyclo [2.2.2] oct-5-ene- in the 12 kinds of aliphatic cyclic vinyl groups shown in the above formula (2) Two aliphatic cyclic vinyl groups, such as a 2-carboxylic acid group, are put into a flask containing a tetrahydrofuran solvent and stirred. Injecting vinylene carbonate into the flask and adding 0.1-5% of the total reactant to A.bis.I.B. (Azobis-Iso-Butyro-Nitrile, hereinafter referred to as AIBN) as an initiator (radica1 initialor). The flask is then switched to a nitrogen or argon gas atmosphere and sealed. Here, the initiator may use a general radical initiator. Subsequently, the flask is kept at a temperature of about 60 to 130C and reacted for about 4 to 24 hours to form an ultraviolet ray photosensitive film copolymer. Here, the aliphatic cyclic vinyl group may be used by selecting another aliphatic cyclic vinyl group from a plurality of aliphatic cyclic olefin groups shown in the formula (2).

이상에서 설명한 바와같이 본 발명에 따른 원자외선용 감광막 공중합체및 그 제조방법은, 비닐레네카보네이트에 지방족비닐기를 첨가하여 원자외선용 감광막 수지, 즉 원자외선용 감광막 공중합체를 형성함으로써 원자외선용 감광막 공중합체를 쉽고 다양하게 합성할 수 있으며 고집적화된 반도체소자에 사용할 수 있어 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 효과가 있다.As described above, the far-infrared photosensitive film copolymer according to the present invention and a manufacturing method thereof are prepared by adding an aliphatic vinyl group to vinylene carbonate to form an ultraviolet-ray photoresist film, that is, an ultraviolet-ray photosensitive film copolymer. The copolymer can be easily and variously synthesized and can be used for highly integrated semiconductor devices, thereby improving the characteristics and reliability of the semiconductor devices and thereby enabling high integration of the semiconductor devices.

Claims (11)

비닐레네카보네이트와 지방족환형비닐기가 중합된 원자외선용 감광막 공중합체.Ultraviolet photosensitive film copolymer in which vinylene carbonate and an aliphatic cyclic vinyl group are polymerized. 청구항 1에 있어서, 상기 지방족환형비닐기는 2-사이클로펜텐-1-아세트산기, 2-사이클로페텐-1-(t-부틸 아세테이트)기, 바이싸이클로[2.2.2]옥트-5-엔-2-티-부틸 카르복실레이트기, 바이 싸이 클로[2.2.2]옥트-5-엔-2-카르복실산기, 바이 싸이 클로[2.2.겨옥트-5-엔-2-(2-하이드록시에틸)카르복실레이트기,2-(2-하이드록시에릴) 카르복실레이트-5-노르보넨기, 2-t-부틸 카르복실레이트-5-노르보넨기, 2-카르복실산-5-노르보넨기, 사이클로페텐기, 사이클로헥센기, 노르보닐롄기 및 노르보닐렌-2-메탄올기 등으로 이루어지는 군에서 선택 두개이상의 지방족환형비닐기가 사용된 것을 특징으로하는 원자외선용 감광막 공중합체.The method of claim 1, wherein the alicyclic vinyl group is a 2-cyclopentene-1-acetic acid group, 2-cyclopentene-1- (t-butyl acetate) group, bicyclo [2.2.2] oct-5-ene-2- Thi-butyl carboxylate group, bicyclo [2.2.2] oct-5-ene-2-carboxylic acid group, bicyclo [2.2.octoxy-5-ene-2- (2-hydroxyethyl) Carboxylate group, 2- (2-hydroxy aryl) carboxylate-5-norbornene group, 2-t-butyl carboxylate-5-norbornene group, 2-carboxylic acid-5-norbone An ultraviolet-ray photosensitive film copolymer, characterized in that two or more aliphatic cyclic vinyl groups selected from the group consisting of a group consisting of a group such as a nen group, a cyclopetene group, a cyclohexene group, a norbornyllian group and a norbornylene-2-methanol group are used. 청구항 1 에 있어서, 상기 원자외선용 감광막 공중합체는 3000∼200000 분자량을 갖는 고분자인 것을 특징으로하는 원자외선용 감광막 공중합체.The ultraviolet photosensitive film copolymer according to claim 1, wherein the ultraviolet photosensitive film copolymer is a polymer having a molecular weight of 3000 to 200000. 비닐레네카보네이트와 지방족환형비닐기를 중합된 원자외선용 감광막공중합체의 제조방법에 있어서, 상기 지방족환형비닐기를 용매가 들어있는 플라스크에 넣고 교반시키는 공정과, 상기 플라스크에 비닐레네카보네이트를 주입하는 공정과, 상기 플라스크에 개시제를 일정량 주입하는 공정과, 상기 플라스크를 질소가스분위기로 만들고 밀봉하는 공정과, 상기 플라스크 내부의 물질을 반응시키는 공정을 포함하는 원자의선용 감광막 공중합체 제조방법.In the method for producing a photosensitive film copolymer for far ultraviolet ray polymerized vinylene carbonate and aliphatic cyclic vinyl group, the aliphatic cyclic vinyl group in a flask containing a solvent and stirring, and the step of injecting vinyl ene carbonate into the flask And a step of injecting a predetermined amount of an initiator into the flask, a step of making the flask in a nitrogen gas atmosphere and sealing the reaction, and a step of reacting a material inside the flask. 청구항 4에 있어서, 상기 지방족환형비닐기는 2-사이클로펜텐-1-아세트산기, 2-사이클로페텐-1-(t-부릴 아세테이트)기, 바이싸이클로[2.2.2]옥트-5-엔-2-t-부틸 카르복실레이트기, 바이 싸이 클로[2.2.2]옥트-5-엔-2-카르복실산기, 바이 싸이 클로[2.2.기옥트-5-엔-2-(2-하이드록시에틸)카르복실레이트기, 2-(2-하이드록시에릴) 카르복실레이트-5-노르보넨기, 2-t-부틸 카르복실레이트-5-노르보넨기, 2-카르복실산-5-노르보넨기, 사이클로페텐기, 사이클로헥센기, 노르보닐렌기 및 노르보닐렌-2-메탄올기 등으로 이루어지는 군에서 선택 두개이상의 지방족환형비닐기를 사용하는 것을 특징으로하는 원자외선용 감광막 공중합체 제조방법.The aliphatic cyclic vinyl group according to claim 4, wherein the alicyclic vinyl group is a 2-cyclopentene-1-acetic acid group, a 2-cyclopentene-1- (t-buryl acetate) group, and a bicyclo [2.2.2] oct-5-ene-2- t-butyl carboxylate group, bicyclo [2.2.2] oct-5-ene-2-carboxylic acid group, bicyclo [2.2.giocta-5-ene-2- (2-hydroxyethyl) Carboxylate group, 2- (2-hydroxyaryl) carboxylate-5-norbornene group, 2-t-butyl carboxylate-5-norbornene group, 2-carboxylic acid-5-norbone A method for producing an ultraviolet-ray photosensitive film copolymer, characterized in that at least two aliphatic cyclic vinyl groups selected from the group consisting of a group consisting of a group such as a nen group, a cyclofetene group, a cyclohexene group, a norbornylene group and a norbornylene-2-methanol group are used. 청구항 4에 있어서, 상기 용매는 테트라하이드로푸란을 사용하는 것을 특징으로하는 원자외선용 감광막 공중합체 제조방법.The method of claim 4, wherein the solvent is tetrahydrofuran. 청구항 4에 있어서, 상기 개시제는 AIBN 을 전체반응물의 0.1∼5%로 사용하는 것을 특징으로하는 원자외선용 감광막 공중합체 제조방법.The method of claim 4, wherein the initiator uses AIBN as 0.1 to 5% of the total reactants. 청구항 4 또는 청구항 7에 있어서, 상기 개시제는 일반적인 래디킬 개시제를 사용하는 것을 특징으로하는 원자외선용 감광막 공중합체 제조방법.The method of claim 4 or 7, wherein the initiator uses a common radical initiator. 청구항 4에 있어서, 상기 질소가스분위기는 아르곤가스분위기로 대신 형성하는 것을 특징으로하는 원자외선용 감광막 공중합체 제조방법.The method of claim 4, wherein the nitrogen gas atmosphere is formed of an argon gas atmosphere instead. 청구항 4 또는 청구항 9에 있어서, 상기 반응온도는 60∼130℃ 정도인 것을 특징으로하는 원자외선용 감광막공중합체 제조방법.10. The method of claim 4 or 9, wherein the reaction temperature is about 60 ° C. to 130 ° C. 11. 청구항 4 또는 청구항 9에 있어서, 상기 반응시간은 4∼24시간 정도인 것을 특징으로하는 원자외선용 감광막공중합체 제조방법.The method for producing a photosensitive film copolymer for ultraviolet light according to claim 4 or 9, wherein the reaction time is about 4 to 24 hours.
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Publication number Priority date Publication date Assignee Title
KR100557594B1 (en) * 1999-08-17 2006-03-10 주식회사 하이닉스반도체 Novel photoresist monomer having stability to post exposure delay, polymer thereof and photoresist composition containing it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100557594B1 (en) * 1999-08-17 2006-03-10 주식회사 하이닉스반도체 Novel photoresist monomer having stability to post exposure delay, polymer thereof and photoresist composition containing it

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