KR102489828B1 - Method For Form An Active Coating On Solder Particle - Google Patents
Method For Form An Active Coating On Solder Particle Download PDFInfo
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- KR102489828B1 KR102489828B1 KR1020220101316A KR20220101316A KR102489828B1 KR 102489828 B1 KR102489828 B1 KR 102489828B1 KR 1020220101316 A KR1020220101316 A KR 1020220101316A KR 20220101316 A KR20220101316 A KR 20220101316A KR 102489828 B1 KR102489828 B1 KR 102489828B1
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- solder particles
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- active film
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- 239000002245 particle Substances 0.000 title claims abstract description 97
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000576 coating method Methods 0.000 title description 6
- 239000011248 coating agent Substances 0.000 title description 5
- 239000012190 activator Substances 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 17
- 238000007906 compression Methods 0.000 claims abstract description 15
- 230000006835 compression Effects 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 239000013543 active substance Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 claims description 6
- QWVCIORZLNBIIC-UHFFFAOYSA-N 2,3-dibromopropan-1-ol Chemical compound OCC(Br)CBr QWVCIORZLNBIIC-UHFFFAOYSA-N 0.000 claims description 3
- DDUHZTYCFQRHIY-UHFFFAOYSA-N 7-chloro-3',4,6-trimethoxy-5'-methylspiro[1-benzofuran-2,4'-cyclohex-2-ene]-1',3-dione Chemical compound COC1=CC(=O)CC(C)C11C(=O)C(C(OC)=CC(OC)=C2Cl)=C2O1 DDUHZTYCFQRHIY-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000001361 adipic acid Substances 0.000 claims description 3
- 235000011037 adipic acid Nutrition 0.000 claims description 3
- SXGBREZGMJVYRL-UHFFFAOYSA-N butan-1-amine;hydrobromide Chemical group [Br-].CCCC[NH3+] SXGBREZGMJVYRL-UHFFFAOYSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- QOHWJRRXQPGIQW-UHFFFAOYSA-N cyclohexanamine;hydron;bromide Chemical compound Br.NC1CCCCC1 QOHWJRRXQPGIQW-UHFFFAOYSA-N 0.000 claims description 3
- PNZDZRMOBIIQTC-UHFFFAOYSA-N ethanamine;hydron;bromide Chemical compound Br.CCN PNZDZRMOBIIQTC-UHFFFAOYSA-N 0.000 claims description 3
- XWBDWHCCBGMXKG-UHFFFAOYSA-N ethanamine;hydron;chloride Chemical compound Cl.CCN XWBDWHCCBGMXKG-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- BBFCIBZLAVOLCF-UHFFFAOYSA-N pyridin-1-ium;bromide Chemical compound Br.C1=CC=NC=C1 BBFCIBZLAVOLCF-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 238000007598 dipping method Methods 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- DSESGJJGBBAHNW-UHFFFAOYSA-N (e)-[amino(anilino)methylidene]-phenylazanium;bromide Chemical compound Br.C=1C=CC=CC=1N=C(N)NC1=CC=CC=C1 DSESGJJGBBAHNW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
Abstract
Description
본 발명은 솔더 입자에 활성도막을 형성하는 방법에 관한 것으로, 보다 상세하게는 수지 필름 내에 배치되어 단자간 납땜부를 형성하기 위한 솔더 입자에 활성도막을 압착 형성하기 위한 방법에 관한 것이다. The present invention relates to a method of forming an active film on solder particles, and more particularly, to a method for compressing and forming an active film on solder particles disposed in a resin film to form a soldered portion between terminals.
통상 전자기기를 제조하기 위해서는 반도체 칩과 같은 전자부품 또는 각종 기판의 단자를 서로 접속시키게 된다. 이와 같은 접속을 이루기 위해서는 이방성 도전 필름(Anisotropic Conductive Film)이나 솔더 페이스트(Solder Paste) 등을 사용한다. In general, in order to manufacture electronic devices, terminals of electronic components such as semiconductor chips or various substrates are connected to each other. To achieve such a connection, an anisotropic conductive film or solder paste is used.
이방성 도전 필름은 반도체 칩과 플렉시블 프린트 기판(COF, Chip On Film) 뿐만 아니라, 플렉시블 프린트 기판과 유리 기판(FOG, Film On Glass). 플렉시블 프린트 기판과 유리 에폭시 기판(FOB, Film On Board)의 접속에 사용된다.Anisotropic conductive films include not only semiconductor chips and flexible printed boards (COF, Chip On Film), but also flexible printed boards and glass substrates (FOG, Film On Glass). It is used to connect a flexible printed circuit board and a glass epoxy substrate (FOB, Film On Board).
이방성 도전 필름은 수지 필름에 도전성 입자가 분산되어 있다. In the anisotropic conductive film, conductive particles are dispersed in a resin film.
상기 도전성 입자는 니켈과 같은 금속입자로 또는 금속이 도금된 수지입자로 이루어지며, 이방성 도전 필름은 통상 열경화성 수지 내에 도전성 입자를 혼합시킨 후 경화시켜 필름 형태로 가공된 것이다. The conductive particles are made of metal particles such as nickel or metal-plated resin particles, and the anisotropic conductive film is generally processed into a film form by mixing conductive particles in a thermosetting resin and then curing the conductive particles.
이방성 도전 필름에 의해 접속구조체를 이루는 방법은 다음과 같다. A method of forming a connection structure using an anisotropic conductive film is as follows.
제 1,2 접속 대상 부재 사이에 이방성 도전 필름을 삽입하고 가열 가압하면, 가압된 도전성 입자에 의해 제 1,2 접속 대상 부재의 단자들은 전기적 접속을 이루는 한편, 열에 의해 용융된 수지필름이 다시 경화되면서 상기 전기적 접속이 유지되게 된다. When the anisotropic conductive film is inserted between the first and second connection target members and heated and pressed, the terminals of the first and second connection target members are electrically connected by the pressed conductive particles, while the resin film melted by the heat is cured again. While doing so, the electrical connection is maintained.
이방성 도전 필름의 경우, 도전성 입자의 제조 비용이 높고, 금속입자로 제조된 도전성 입자는 단자를 파고들어 단자의 손상을 일으키는 문제점이 있다. 금속이 도금된 수지 입자는 단자간 거리를 이격시키는 방향으로 작용하는 잔류 응력이 존재하게 되므로 접속구조체의 내구성 및 접속 신뢰성에 악영향을 끼치게 된다.In the case of the anisotropic conductive film, the manufacturing cost of the conductive particles is high, and the conductive particles made of metal particles penetrate the terminals and cause damage to the terminals. The metal-plated resin particles have residual stress acting in the direction of spacing the terminals apart, thereby adversely affecting the durability and connection reliability of the connection structure.
또한, 이방성 도전 필름에 의한 접속방법에서는 수지입자가 완전히 경화되어 단자간 거리를 유지할 수 있을 때까지 접속 공정에 오랜 시간이 소요되는 문제점이 있다. In addition, in the connection method using the anisotropic conductive film, there is a problem in that the connection process takes a long time until the resin particles are completely cured and the distance between the terminals can be maintained.
한편, 솔더 페이스트는 수지 페이스트에 솔더 입자(Solder Particle), 플럭스와 활성제 등을 혼합한 것이다. 솔더 페이스트는 제 1,2 접속 대상 부재의 단자에 스크린 인쇄 등으로 도포된 후, 리플로우 공정에 의해 솔더 입자가 용융되면서 자가 조립이 일어나 단자간 전기적 접속을 이루게 된다. 솔더 페이스트에 의한 접속은 솔더 페이스트의 도포량을 정밀하게 조절하기 힘들고, 국소부위에만 페이스트를 도포하기도 힘들어 초미세 회로 기판에서의 전기적 접속을 이루기 힘든 문제가 있다. On the other hand, the solder paste is a resin paste mixed with solder particles, a flux, an activator, and the like. After the solder paste is applied to the terminals of the first and second connection target members by screen printing, etc., solder particles are melted by a reflow process and self-assembly occurs to form electrical connections between the terminals. In connection with solder paste, it is difficult to precisely control the amount of solder paste applied and it is difficult to apply paste only to a localized area, making it difficult to achieve electrical connection on an ultra-fine circuit board.
또한 솔더 페이스트에 사용되는 솔더 입자는 주로 납-주석 소재의 입자 형태로 가공한 후 표면에 대면방지제 등을 코팅하여 사용되기도 한다. 이와 같은 코팅은 주로 디핑(Dipping)이나 스프레이(Spray)에 의해 이루어지며 그 밀착강도가 약해서 코팅층이 박리되는 경우가 많은 문제점이 있다. In addition, solder particles used in solder paste are mainly processed into particles of lead-tin material and then coated with an anti-contact agent or the like on the surface to be used. Such coating is mainly made by dipping or spraying, and there are many problems in that the coating layer is peeled off due to its weak adhesion strength.
또한, 솔더 페이스트에 의해 형성된 접속구조체는 경우에 따라 제 1,2 접속 대상 부재 사이를 수지로 충진하는 언더필(Under Fill)이 필요하기도 하여 접속구조체를 형성한 후 별도의 언더필을 형성하는 공정이 필요한 경우도 있다. In addition, the connection structure formed by solder paste requires an underfill for filling the first and second connection target members with resin in some cases, so a process of forming a separate underfill after forming the connection structure is required. Sometimes.
한편 종래 솔더 페이스에 사용되는 솔더 입자에는, 대한민국 등록특허 제1205839호에 개시된 바와 같이, 볼밀 장치 내에서 볼밀용 볼의 낙하충돌에 의해 금속 나노 입자를 압입하기도 한다. 하지만, 상기 등록특허에서는 솔더 입자가 5~50 ㎛의 직경을 가지는 것으로 개시되어 있는데, 최소 직경이 800 ㎛ 정도인 통상의 볼밀용 볼과 충돌하게 되면 솔더 입자가 변형되거나, 솔더 입자끼리 뭉쳐지는 경우가 많으며, 추후 선별 작업에서 이를 걸러내기 힘든 문제가 있다. On the other hand, as disclosed in Korean Patent Registration No. 1205839, metal nanoparticles are sometimes pressed into solder particles used in a conventional solder paste by dropping collision of balls for a ball mill in a ball mill device. However, the above registered patent discloses that the solder particles have a diameter of 5 to 50 μm, and when colliding with a ball for a ball mill having a minimum diameter of about 800 μm, the solder particles are deformed or the solder particles are agglomerated. There are many, and there is a problem that it is difficult to filter them out in the later screening work.
본 출원인은 종래 이방성 도전 필름 및 솔더 페이스트에 의한 접속 방법의 문제점을 해결하기 위하여, 활성제에 의해 활성도막이 형성된 솔더 입자와, 이러한 솔더 입자에 의해 제조되는 접속용 필름에 대해 특허출원하였다. In order to solve the problems of the conventional connection method using an anisotropic conductive film and solder paste, the present applicant filed a patent application for solder particles having an active film formed by an activator and a connection film manufactured by the solder particles.
접속용 필름에 솔더 입자를 혼입시킬 때는 활성제를 별도로 수지 필름 내에 포함시켜 공급하는 것이 힘들기 때문에, 활성제를 솔더 입자에 도막 형태로 형성시키는 것이 요구된다. 하지만, 종래의 코팅 방법에 의하면 도막이 입자의 표면에 균일하게 형성되지도 않을 뿐만 아니라 쉽게 박리되기 때문에, 실제 접속 공정에서 납땜부위에 활성제가 제대로 공급되지 못하는 문제점이 있다. When mixing the solder particles into the connection film, it is difficult to supply the active agent separately in the resin film, so it is required to form the active agent on the solder particles in the form of a coating film. However, according to the conventional coating method, since the coating film is not uniformly formed on the surface of the particles and is easily peeled off, there is a problem in that the activator is not properly supplied to the soldering part in the actual connection process.
본 발명은 솔더 입자의 표면에 납땜시 흡착, 용해, 침투, 확산 등의 계면 현상을 원활히 일으키도록 활성제가 압착 형성되어 활성도막을 이루도록 하는 방법을 제공하는 것을 그 목적으로 한다. An object of the present invention is to provide a method for forming an active film by compressing an activator so as to smoothly cause interface phenomena such as adsorption, dissolution, penetration, and diffusion on the surface of solder particles during soldering.
본 발명의 솔더 입자에 활성도막을 형성하는 방법은,The method of forming an active film on the solder particles of the present invention,
솔더 입자와 용매를 교반기에 투입하여 세정하는 단계와;Injecting solder particles and a solvent into a stirrer to clean the mixture;
교반기에 활성제를 추가 투입하고, 낙하되는 솔더 입자들의 충돌에 의해 활성도막이 솔더 입자 표면에 압착 형성되는 단계와;Adding an activator to the stirrer, and forming an active film by compression on the surface of the solder particles by the collision of the falling solder particles;
솔더 입자로부터 용매를 제거하고 건조하는 단계를 포함한다.and removing the solvent from the solder particles and drying them.
상기 교반기에 투입되는 솔더 입자과 용매의 중량비는 1.5~3.5 : 1 인 것이 바람직하다. It is preferable that the weight ratio of the solder particles and the solvent introduced into the agitator is 1.5 to 3.5:1.
상기 용매는 아세톤, MEK, MIBK, 물 또는 알코올 중 하나 이상인 것이 바람직하다. The solvent is preferably one or more of acetone, MEK, MIBK, water or alcohol.
상기 솔더 입자의 직경은 1~100 ㎛ 의 범위 내인 것이 바람직하다.The diameter of the solder particles is preferably within a range of 1 to 100 μm.
본 발명의 활성제는 부틸 아민 브롬화수소산염, 부틸 아민 염화수소산염, 에틸 아민 브롬화수소산염, 피리딘 브롬화수소산염, 시클로 헥실 아민 브롬화수소산 염, 에틸 아민 염화수소산염, 1,3-디페닐 구아니딘 브롬화수소산염, 2,3-디브로모-1-프로판올, 옥살산, 말론산, 숙신산,아디프산, 피메릭산, 팔미틱산, DL-말릭산, 수베릭산으로 구성되는 그룹으로부터 최소 하나 이상 선택되는 것이 바람직하다. The active agent of the present invention is butyl amine hydrobromide, butyl amine hydrochloride, ethyl amine hydrobromide, pyridine hydrobromide, cyclohexyl amine hydrobromide, ethyl amine hydrochloride, 1,3-diphenyl guanidine hydrobromide, It is preferably at least one selected from the group consisting of 2,3-dibromo-1-propanol, oxalic acid, malonic acid, succinic acid, adipic acid, pimeric acid, palmitic acid, DL-malic acid, and suberic acid.
상기 솔더 입자 표면에 활성도막이 압착 형성되는 단계는 The step of forming an active film on the surface of the solder particle by compression
투입된 솔더 입자 중량의 1~ 6 % 의 활성제를 투입하고 5~30시간 교반기를 가동하여 이루어지는 것이 바람직하다. It is preferable to add an activator of 1 to 6% of the weight of the added solder particles and operate the stirrer for 5 to 30 hours.
상기 단계는 상기 활성제를 솔더 입자 중량의 0.5~5.5 % 투입하여 2~28시간 교반기를 가동한 후, 솔더 입자 중량의 0.5~5.5 %의 활성제를 더 투입하여 2~28시간 교반기를 가동하여 이루어지는 것이 바람직하다.The above step is performed by adding 0.5 to 5.5% of the active agent by weight of the solder particles and operating the agitator for 2 to 28 hours, then adding 0.5 to 5.5% of the active agent by weight of the solder particles and operating the agitator for 2 to 28 hours. desirable.
상기 교반기는 150 rpm ~ 250 rpm으로 회전하는 것이 바람직하다. Preferably, the agitator rotates at 150 rpm to 250 rpm.
상기 건조하는 단계는 50~90℃의 온도 및 진공 하에서 10 ~ 24 시간 건조하는 단계인 것이 바람직하다. The drying step is preferably a step of drying for 10 to 24 hours at a temperature of 50 to 90 ° C. and under vacuum.
본 발명에 의하면, 솔더 입자에 형성된 활성도막의 밀착강도를 높일 수 있고, 이에 따라 솔더 입자를 수지 필름에 함유시켜 사용하는 것이 가능하게 되는 효과가 있다. According to the present invention, it is possible to increase the adhesion strength of the active film formed on the solder particles, and accordingly, there is an effect that it is possible to use the solder particles in a resin film.
도 1은 본 발명 일 실시예에 의해 활성도막 형성 전후의 솔더 입자를 나타낸 사진.1 is a photograph showing solder particles before and after forming an active film according to an embodiment of the present invention.
이하, 본 발명을 그 실시예에 따라 보다 상세하게 설명한다. Hereinafter, the present invention will be described in more detail according to its examples.
본 발명에서 사용되는 솔더 입자는 그 직경이 1~100 ㎛ 의 범위 내의 것인데, 실시예에서는 솔더 입자가 사용될 부위의 크기 등을 고려하여 25~45 ㎛, 8~25㎛, 3~8 ㎛ 의 직경 범위 중 하나의 범위로 크기를 선택하는 것이 바람직하다. The solder particles used in the present invention have a diameter in the range of 1 to 100 μm. It is preferred to select a size in one range of ranges.
초미세 회로기판의 접속에 사용될 솔더 입자의 직경은 5㎛ 미만인 것을 사용하는 것이 바람직하다. It is preferable to use solder particles having a diameter of less than 5 μm to be used for connection of ultra-fine circuit boards.
솔더 입자는 주석(Sn)-비스무스(Bi) 기반의 저융점 솔더 재질을 사용하는 것이 바람직하다. It is preferable to use a low melting point solder material based on tin (Sn)-bismuth (Bi) as the solder particles.
솔더 입자에 활성도막을 형성하기 위해서 먼저 솔더 입자를 용매와 함께 교반기에 투입한다. In order to form an active film on solder particles, first, the solder particles are put into a stirrer together with a solvent.
본 실시예에서 사용되는 용매는 케톤계 용매로 아세톤, MEK. 또는 MIBK를 사용하는 것이 바람직하다. 용매로는 물이나 알코올을 사용하는 것도 바람직하다. The solvent used in this embodiment is acetone, MEK as a ketone solvent. Alternatively, it is preferable to use MIBK. It is also preferable to use water or alcohol as a solvent.
솔더 입자와 용매는 중량비 1.5~3.5 : 1 로 투입된다. Solder particles and solvent are added at a weight ratio of 1.5 to 3.5:1.
솔더 입자와 용매를 투입한 후, 150 rpm ~ 250 rpm의 회전수로 교반기를 운전한다. 150rpm이하에서는 회전속도가 느려 생산성이 낮고, 250 rpm이상에서는 용매와 솔더 입자가 원심력에 따라 회전통과 함께 회전하기 때문에 세정이나 압착이 이루어지지 않는다.After introducing the solder particles and the solvent, the stirrer is operated at a rotational speed of 150 rpm to 250 rpm. Below 150 rpm, the rotation speed is slow, resulting in low productivity, and above 250 rpm, solvent and solder particles rotate together with the rotary cylinder according to centrifugal force, so cleaning or compression is not performed.
회전하는 회전통을 따라 일정 높이로 올라간 솔더 입자들은 낙하되면서 서로 충돌하게 된다. 이에 따라 표면의 스케일 들이 제거되어 세정되는데, 이와 같은 세정단계는 30분 ~ 2 시간의 범위 내에서 진행하는 것이 바람직하다. Solder particles that have risen to a certain height along the rotating trough fall and collide with each other. Accordingly, scales on the surface are removed and cleaned, and such a cleaning step is preferably performed within the range of 30 minutes to 2 hours.
세정단계가 완료되면, 회전통에 활성제를 투입한다. When the cleaning step is completed, the activator is put into the rotary drum.
본 실시예에서 활성제는 부틸 아민 브롬화수소산염, 부틸 아민 염화수소산염, 에틸 아민 브롬화수소산염, 피리딘 브롬화수소산염, 시클로 헥실 아민 브롬화수소산 염, 에틸 아민 염화수소산염, 1,3-디페닐 구아니딘 브롬화수소산염, 2,3-디브로모-1-프로판올, 옥살산, 말론산, 숙신산,아디프산, 피메릭산, 팔미틱산, DL-말릭산, 수베릭산으로 구성되는 그룹으로부터 최소 하나 이상으로 선택된다. In this example, the active agent is butyl amine hydrobromide, butyl amine hydrochloride, ethyl amine hydrobromide, pyridine hydrobromide, cyclohexyl amine hydrobromide, ethyl amine hydrochloride, 1,3-diphenyl guanidine hydrobromide , 2,3-dibromo-1-propanol, oxalic acid, malonic acid, succinic acid, adipic acid, pimeric acid, palmitic acid, DL-malic acid, and at least one selected from the group consisting of suberic acid.
활성제는 투입된 솔더 입자 중량의 1~ 6 % 를 투입하는 것이 바람직하다. 활성제가 1% 미만인 경우, 원하는 활성도막을 얻기 위해서는 교반기를 지나치게 오랫동안 가동하여야 하고, , 6%보다 많을 경우 활성도막을 형성한 뒤 활성제가 많이 남게 된다. It is preferable to add 1 to 6% of the weight of the added solder particles as the activator. When the active film is less than 1%, the stirrer must be operated for an excessively long time to obtain a desired active film, and when the active film is greater than 6%, a large amount of activator remains after forming the active film.
활성제를 투입후 교반기를 회전시키면 솔더 입자들은 서로 충돌하고, 충돌되는 솔더 입자의 외면에 활성제가 압착되면서 활성도막이 형성되게 된다. 본 실시예에서와 같이 솔더 입자끼리의 충돌하는 힘에 의해 활성도막을 압착 형성하게 되면 활성도막의 밀착강도를 매우 높일 수 있게 된다. When the stirrer is rotated after adding the activator, the solder particles collide with each other, and the active film is formed as the activator is compressed on the outer surface of the colliding solder particles. As in the present embodiment, when the active film is compressed and formed by the force of collision between solder particles, the adhesion strength of the active film can be greatly increased.
또한, 종래의 볼밀용 볼을 사용하는 것과 달리 솔더 입자 자체의 중량으로 충돌하기 때문에 솔더 입자들이 뭉쳐지거나 입자 형상의 변화가 발생하지 않는다. In addition, unlike conventional balls for a ball mill, the solder particles collide with each other due to their own weight, so that the solder particles do not agglomerate or change the shape of the particles.
또한 상기 솔더 입자 표면에 활성도막이 압착 형성되는 단계는 우선 활성제를 솔더 입자 중량의 0.5~5.5 % 투입하여 2~28시간 교반기를 가동한 후(1 단계 압착), 활성제를 솔더 입자 중량의 0.5~5.5 % 더 투입하여 2~28시간 교반기를 가동하는 형태(2 단계 압착)로 두 단계로 나뉘어 이루어지는 것이 바람직하다.In addition, in the step of forming the active film on the surface of the solder particles by pressing, the activator is first injected at 0.5 to 5.5% of the weight of the solder particles, the stirrer is operated for 2 to 28 hours (pressing step 1), and then the activator is added at 0.5 to 5.5% of the weight of the solder particles. It is preferable that it is divided into two stages in the form of adding more % and operating the stirrer for 2 to 28 hours (two-stage compression).
1단계 압착은 16시간, 2단계 압착은 7시간 시행하는 것이 보다 바람직하다.It is more preferable to perform the first step compression for 16 hours and the second step compression for 7 hours.
이와 같이 2단계로 압착 공정을 분리하는 것은 1단계에서 활성제가 솔더 입자 표면에 골고루 물리적 압착을 이루고, 2단계에서는 압착 형성된 활성도막 위에 다시 활성제를 압착시키게 되므로, 솔더 입자 표면에 일정하고 치밀한 활성도막을 형성시킬 수 있게 된다. (도 1 참조)Separating the compression process into two steps in this way is such that in the first step, the activator is evenly physically compressed on the surface of the solder particle, and in the second step, the activator is compressed again on the active film formed by compression, so that a constant and dense active film is formed on the surface of the solder particle. be able to form. (See Figure 1)
본 실시예에서 교반기는 회전하는 회전통을 따라 일정 높이로 올라간 솔더 입자들은 낙하되면서 서로 충돌시킬 수 있는 형태의 것으로 설명되어 있으나, 회전 스크류 등에 의해 솔더 입자들을 상승시켜 낙하시켜 충돌시키는 등 솔더 입자를 이동시켜 서로 충돌시킬 수 있는 어떤 장치라도 본 발명의 교반기의 범위에 속하는 것으로 해석되어야 한다. In this embodiment, the stirrer is described as being of a type in which solder particles raised to a certain height along a rotating trough fall and collide with each other, but a rotating screw raises the solder particles and drops them to collide with each other. Any device that can move and collide with each other should be construed as falling within the scope of the agitator of the present invention.
도막 형성이 완료된 후에는 솔더 입자를 용매로부터 분리한 후, 진공 오븐에 투입하여 50 ~ 90℃의 온도 범위에서 10 ~ 24 시간 건조시키게 된다. After the formation of the coating film is completed, the solder particles are separated from the solvent, put into a vacuum oven, and dried for 10 to 24 hours at a temperature range of 50 to 90 ° C.
상기와 같은 건조단계가 완료되면, 솔더 입자의 표면에 활성도막을 압착 형성하는 작업이 완료되게 된다. When the above drying step is completed, the operation of compressing and forming the active film on the surface of the solder particle is completed.
도 1은 (a)활성도막이 형성되기 전 솔더 입자 및 (b)디핑에 의해 활성도막이 형성된 솔더 입자 (c) 본 실시예 압착방법에 의해 활성도막이 형성된 솔더 입자의 전자현미경 사진이다. 압착형성된 활성도막은 디핑에 의해 형성된 활성도막에 비해 솔더 입자의 표면 요철 등에 잘 침투되어 매끈한 구(球)형상을 이루고 있으며, 약 2~3 ㎛의 솔더 입자에서도 활성도막이 균일하게 형성되어 있음을 확인할 수 있다.1 is an electron micrograph of (a) solder particles before an active film is formed and (b) solder particles on which an active film is formed by dipping (c) solder particles on which an active film is formed by the compression method of this embodiment. Compared to the active film formed by dipping, the active film formed by compression penetrates well into the surface irregularities of the solder particles to form a smooth spherical shape. there is.
도 2는 도 1의 입자들을 표면온도 240℃의 알루미늄 접시에 5초간 올려놓은 뒤 촬영한 사진으로, 활성도막이 없는 솔더 입자들은 전혀 녹지 않고, 디핑에 의해 활성도막이 형성된 솔더입자는 일부만이 녹고, 본 실시예 압착방법에 의해 활성도막이 형성된 솔더입자는 전체가 용융된다. 도 2에 따라 본 실시예 압착방법에 의해 활성도막이 형성된 솔더입자는 용융이 보다 잘 일어나게 됨이 확인된다. 2 is a photograph taken after placing the particles of FIG. 1 on an aluminum dish with a surface temperature of 240 ° C. for 5 seconds. The entirety of the solder particles on which the active film is formed by the compression method is melted. According to FIG. 2, it is confirmed that the solder particles having the active film formed by the compression method of this embodiment are more likely to melt.
한편 디핑에 의해 활성도막이 형성된 솔더입자는 198℃에서 산화가 일어나는 반면, 본 실시예 압착방법에 의해 활성도막이 형성된 솔더입자는 225℃에서 산화가 발생하므로, 내산화성이 뛰어나다. On the other hand, solder particles having an active film formed by dipping are oxidized at 198° C., whereas solder particles having an active film formed by the compression method of this embodiment are oxidized at 225° C.
Claims (9)
교반기에 투입된 솔더 입자 중량의 1~ 6 % 의 활성제를 추가 투입하고, 교반기의 회전에 따라 일정 높이로 상승한 솔더 입자들이 낙하하여 충돌함에 따라 활성도막이 솔더 입자 표면에 압착 형성되는 단계와;
솔더 입자로부터 용매를 제거하고 건조하는 단계를 포함하는 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
Injecting solder particles and solvent into a stirrer at a weight ratio of 1.5 to 3.5: 1 to clean;
Adding an activator of 1 to 6% of the weight of the solder particles put into the stirrer, and forming an active film by pressing on the surface of the solder particles as the solder particles that have risen to a certain height fall and collide with the rotation of the stirrer;
A method of forming an active film on solder particles, comprising the steps of removing a solvent from the solder particles and drying them.
상기 용매는 아세톤, MEK, MIBK, 물 또는 알코올 중 하나 이상인 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 1,
The solvent is a method of forming an active film on solder particles, characterized in that at least one of acetone, MEK, MIBK, water or alcohol.
상기 솔더 입자의 직경은 1~100 ㎛ 의 범위 내인 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 1,
A method of forming an active film on solder particles, characterized in that the diameter of the solder particles is in the range of 1 ~ 100 ㎛.
상기 활성제는 부틸 아민 브롬화수소산염, 부틸 아민 염화수소산염, 에틸 아민 브롬화수소산염, 피리딘 브롬화수소산염, 시클로 헥실 아민 브롬화수소산 염, 에틸 아민 염화수소산염, 2,3-디브로모-1-프로판올, 옥살산, 말론산, 숙신산,아디프산, 피메릭산, DL-말릭산, 수베릭산으로 구성되는 그룹으로부터 최소 하나 이상 선택되는 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 1,
The active agent is butyl amine hydrobromide, butyl amine hydrochloride, ethyl amine hydrobromide, pyridine hydrobromide, cyclohexyl amine hydrobromide, ethyl amine hydrochloride, 2,3-dibromo-1-propanol, oxalic acid , Malonic acid, succinic acid, adipic acid, pimeric acid, DL- malic acid, a method of forming an active film on solder particles, characterized in that at least one selected from the group consisting of suberic acid.
상기 솔더 입자 표면에 활성도막이 압착 형성되는 단계는
활성제를 투입한 후 5~30시간 교반기를 가동하여 이루어지는 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 1,
The step of forming an active film on the surface of the solder particle by compression
A method of forming an active film on solder particles, characterized in that by operating the stirrer for 5 to 30 hours after adding the activator.
상기 단계는 상기 활성제를 솔더 입자 중량의 0.5~5.5 % 투입하여 2~28시간 교반기를 가동한 후, 다시 상기 활성제를 솔더 입자 중량의 0.5~5.5 % 더 투입하여 2~28시간 교반기를 가동하여 이루어지는 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 6,
In the step, the activator is added in an amount of 0.5 to 5.5% of the weight of the solder particles and the agitator is operated for 2 to 28 hours, and then the activator is added in an amount of 0.5 to 5.5% of the weight of the solder particles and the agitator is operated for 2 to 28 hours. A method of forming an active film on solder particles, characterized in that.
상기 교반기는 150 rpm ~ 250 rpm으로 회전하는 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.
According to claim 1,
The method of forming an active film on the solder particles, characterized in that the stirrer rotates at 150 rpm to 250 rpm.
상기 건조하는 단계는 50~90℃의 온도 및 진공 하에서 10 ~ 24 시간 건조하는 단계인 것을 특징으로 하는 솔더 입자에 활성도막을 형성하는 방법.According to claim 1,
The drying step is a method of forming an active film on solder particles, characterized in that the step of drying for 10 to 24 hours at a temperature of 50 ~ 90 ℃ and vacuum.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220101316A KR102489828B1 (en) | 2022-08-12 | 2022-08-12 | Method For Form An Active Coating On Solder Particle |
| PCT/KR2023/006808 WO2024034788A1 (en) | 2022-08-12 | 2023-05-19 | Method for forming active coating film on solder particles |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020220101316A KR102489828B1 (en) | 2022-08-12 | 2022-08-12 | Method For Form An Active Coating On Solder Particle |
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| KR102489828B1 true KR102489828B1 (en) | 2023-01-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024034788A1 (en) * | 2022-08-12 | 2024-02-15 | 오컴퍼니 주식회사 | Method for forming active coating film on solder particles |
| KR102636170B1 (en) | 2023-06-12 | 2024-02-15 | 오컴퍼니 주식회사 | Adhesive Composition For Bonding Mini/Micro LED |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000317682A (en) * | 1998-07-02 | 2000-11-21 | Matsushita Electric Ind Co Ltd | Solder powder and manufacture thereof, and solder paste |
| KR100923887B1 (en) | 2008-01-29 | 2009-10-28 | (주)덕산테코피아 | Solder ball for semiconductor device package |
| JP2011104634A (en) * | 2009-11-19 | 2011-06-02 | Dowa Holdings Co Ltd | Method for producing solder powder |
| KR101205839B1 (en) | 2011-04-11 | 2012-11-28 | 전자부품연구원 | Manufacturing method of the solder paste and reflow method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1147978A (en) * | 1997-07-29 | 1999-02-23 | Senju Metal Ind Co Ltd | Powder solder for solder paste, and coating method of powder solder |
| JP3788335B2 (en) * | 2001-12-07 | 2006-06-21 | 千住金属工業株式会社 | Solder paste |
| US9682447B2 (en) * | 2010-08-20 | 2017-06-20 | Henkel IP & Holding GmbH | Organic acid- or latent organic acid-functionalized polymer-coated metal powders for solder pastes |
| KR102489828B1 (en) * | 2022-08-12 | 2023-01-18 | 오컴퍼니 주식회사 | Method For Form An Active Coating On Solder Particle |
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2022
- 2022-08-12 KR KR1020220101316A patent/KR102489828B1/en active IP Right Grant
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- 2023-05-19 WO PCT/KR2023/006808 patent/WO2024034788A1/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000317682A (en) * | 1998-07-02 | 2000-11-21 | Matsushita Electric Ind Co Ltd | Solder powder and manufacture thereof, and solder paste |
| KR100923887B1 (en) | 2008-01-29 | 2009-10-28 | (주)덕산테코피아 | Solder ball for semiconductor device package |
| JP2011104634A (en) * | 2009-11-19 | 2011-06-02 | Dowa Holdings Co Ltd | Method for producing solder powder |
| KR101205839B1 (en) | 2011-04-11 | 2012-11-28 | 전자부품연구원 | Manufacturing method of the solder paste and reflow method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024034788A1 (en) * | 2022-08-12 | 2024-02-15 | 오컴퍼니 주식회사 | Method for forming active coating film on solder particles |
| KR102636170B1 (en) | 2023-06-12 | 2024-02-15 | 오컴퍼니 주식회사 | Adhesive Composition For Bonding Mini/Micro LED |
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| WO2024034788A1 (en) | 2024-02-15 |
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