KR102185824B1 - Heat dissipation structure of semiconductor package for power conversion - Google Patents

Heat dissipation structure of semiconductor package for power conversion Download PDF

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KR102185824B1
KR102185824B1 KR1020190001220A KR20190001220A KR102185824B1 KR 102185824 B1 KR102185824 B1 KR 102185824B1 KR 1020190001220 A KR1020190001220 A KR 1020190001220A KR 20190001220 A KR20190001220 A KR 20190001220A KR 102185824 B1 KR102185824 B1 KR 102185824B1
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power conversion
semiconductor package
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circulation path
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강병혁
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Abstract

본 발명은 전력변환용 반도체와 기판을 일체화 한 열교환식 전력변환 반도체 패키지에 있어서, 전력변환 반도체 패키지을 냉각하기 위해 패키지의 일측 부에 구성되는 냉매입력 모듈부 및 냉매출력 모듈부와, 냉매가 순환 되도록 구성되는 냉매 순환로와, 냉매의 오염 및 열화에 의한 저항 R값의 변화를 센싱하기 위해 입력냉매모듈부의 전단에 구성되는 저항센서와, 냉매순환로의 일측부에 구성되는 냉매 순환용 펌프와, 냉매순환로의 일측부에 구성되는 냉매쿨러 및 냉매쿨러 후단에 구성되는 급수탱크로 이루어지는 반도체 패키지의 방열구조에 특징이 있는 것으로, PCB기판과 전력변환용 소자를 동시에 냉각 가능하도록 하여 대 전류용 베터리 충방전 시스템 및 ESS시스템을 안정적으로 운용할 수 있는 효과가 있다.The present invention is a heat exchange type power conversion semiconductor package in which a power conversion semiconductor and a substrate are integrated, a refrigerant input module unit and a refrigerant output module unit configured at one side of the package to cool the power conversion semiconductor package, and the refrigerant is circulated. A refrigerant circulation path constituted, a resistance sensor configured at the front end of the input refrigerant module part to sense a change in the resistance R value due to contamination and deterioration of the refrigerant, a refrigerant circulation pump configured on one side of the refrigerant circulation path, and a refrigerant circulation path It is characterized by the heat dissipation structure of a semiconductor package consisting of a refrigerant cooler configured on one side of the refrigerant cooler and a water supply tank configured at the rear end of the refrigerant cooler, and a high current battery charging/discharging system by allowing simultaneous cooling of the PCB substrate and power conversion elements. And there is an effect of stably operating the ESS system.

Description

전력변환용 반도체 패키지의 방열구조{Heat dissipation structure of semiconductor package for power conversion}Heat dissipation structure of semiconductor package for power conversion

본 발명은 전력변환용 반도체 패키지의 방열구조에 관한 것으로, 기판과, 기판 상에 탑재되는 전력용반도체 소자와, 기판의 외부에 형성되어 반도체 칩과 전기적으로 연결되는 외부리드 및 상기 반도체 칩을 포함하여 기판 상에 형성되는 보호부재 및 를 포함하여 구성되는 반도체 패키지의 방열구조를 제공하여 기판과 전력변환용 반도체 소자를 효과적으로 보호하면서 반도체 패키지를 냉각하는 냉매를 실시간으로 체크하여 냉매의 열화상태에 따라 효율적으로 냉매교환을 할 수 있도록 하는 것이다.The present invention relates to a heat dissipation structure of a semiconductor package for power conversion, comprising a substrate, a power semiconductor device mounted on the substrate, an external lead formed outside the substrate and electrically connected to the semiconductor chip, and the semiconductor chip By providing a protective member formed on the substrate and a heat dissipation structure of the semiconductor package including the semiconductor package, while effectively protecting the substrate and the semiconductor device for power conversion, the refrigerant that cools the semiconductor package is checked in real time and according to the deterioration state of the refrigerant. It is to enable efficient refrigerant exchange.

종래의 전력변환용 반도체 패키지의 방열구조에서 발생하는 열에 의한 오동작 등을 방지하기 위하여 방열수단을 필요로 하는데 일반적으로 반도체 패키지에 사용되는 방열수단으로서는 공냉식 방열수단과 수냉식 방열수단이 사용되고 있다.In order to prevent malfunction due to heat generated in the heat dissipation structure of a conventional power conversion semiconductor package, a heat dissipation means is required. In general, air-cooled heat dissipation means and water-cooled heat dissipation means are used as heat dissipation means used in semiconductor packages.

공냉식 방열수단으로서는 히트 싱크(heat sink)를 사용하는 것과, 히트 싱크와 냉각팬(cooling fan)을 함께 사용하는 것과, 수냉식 방열수단으로 히트싱크와 이 히트싱크에 냉각수(cooling water)를 접촉시키는 것이 있다.As an air-cooled heat dissipation means, a heat sink is used, a heat sink and a cooling fan are used together, and a water-cooled heat dissipation means is used to contact the heat sink and cooling water. have.

그러나 이러한 종래의 공냉식 방열수단 중 히트싱크만을 사용하는 방열수단의 경우에는 열전도성이 낮은 통상적인 에폭시수지로 된 밀봉부재에 히트싱크를 접촉시키므로 밀봉부재가 외부공기와 접촉하지 않아 방열효과가 저하되는 문제가 있다.However, in the case of a heat dissipation means using only a heat sink among these conventional air-cooled heat dissipation means, since the heat sink is brought into contact with a conventional epoxy resin sealing member having low thermal conductivity, the sealing member does not come into contact with external air, reducing the heat dissipation effect. there is a problem.

또한 공냉식 방열수단 중 히트싱크와 냉각팬을 사용하는 방열수단의 경우에는 냉각팬을 사용하는 만큼 히트싱크 만을 사용한 것에 비해 방열효과는 향상되지만 열전도성이 낮은 에폭시 수지로 된 밀봉부재에 히트싱크가 접촉되므로 밀봉부재가 외부공기와 접촉하지 않아 방열효과가 떨어지는 문제가 있다.In addition, in the case of a heat dissipation means that uses a heat sink and a cooling fan among air-cooled heat dissipation means, the heat dissipation effect is improved compared to using only the heat sink as much as the cooling fan is used, but the heat sink contacts the sealing member made of epoxy resin with low thermal conductivity. Therefore, there is a problem that the heat dissipation effect is deteriorated because the sealing member does not contact external air.

또한 수랭식 방열수단으로서 히트싱크와 냉각수를 사용하는 방열수단의 경우에는 히트싱크에 냉각수를 접촉시키는 만큼 히트싱크 만을 사용한 것에 비하여 방열교화는 향상되지만, 이 또한 열전도성이 낮은 에폭시 수지의 밀봉부재에 히트싱크가 접촉되어 있으므로 방열효과가 저하되는 문제점이 있다.In addition, in the case of a heat dissipation means that uses a heat sink and coolant as a water-cooled heat dissipation means, the heat dissipation exchange is improved compared to that of using only the heat sink as much as the coolant is brought into contact with the heat sink. Since the sink is in contact, there is a problem that the heat dissipation effect is lowered.

더욱이 이러한 종래의 방열수단은 반도체 패키지를 구성하는 구성요소 외 별도의 부품이 추가 구성되므로 구조가 복잡해지고 반도체 패키지 전체의 크기가 커지게 되며 생산성이 저하되고 원가상승을 초래하게 된다.In addition, since the conventional heat dissipation means includes additional components other than the components constituting the semiconductor package, the structure becomes complex, the size of the entire semiconductor package increases, productivity decreases, and cost increases.

한편, 이러한 반도체 패키지에서 방열효과만을 고려한다면 밀봉부재를 제거하는 것에 가장 바람직하지만 PCB기판과 전력용반도체 소자 및 금속와이어 등의 보호를 무시할 수 없기 때문에 필연적으로 상기와 같은 문제가 발생하게 된다.On the other hand, if only the heat dissipation effect is considered in such a semiconductor package, it is most preferable to remove the sealing member, but the above problem inevitably occurs because the protection of the PCB substrate, the power semiconductor device, and the metal wire cannot be ignored.

대한민국특허 공개공보 제10-2017-0118599(2017.10.25)Korean Patent Publication No. 10-2017-0118599 (2017.10.25) 대한민국특허 공개공보 제10-2006-0092689(2006.08.23)Korean Patent Publication No. 10-2006-0092689 (2006.08.23)

본 발명은 상기와 같은 문제점을 감안하여 안출된 것으로, PCB기판과 전력변환 소자를 동시에 냉각 기능하도록 하며, 배터리 또는 ESS 시스템의 충·방전 부의 전원 및 통신라인을 인출 가능하도록 구성하고, 사용되는 세팅된 냉매의 온도 및 저항값 중 어느 하나에라도 이상이 있는 경우 이상 값을 센싱하여 제어할 수 있도록 구성하는 것에 그 목적이 있다.The present invention was conceived in view of the above problems, and configured to cool the PCB substrate and the power conversion element at the same time, and to be able to withdraw the power and communication line of the charging/discharging unit of the battery or ESS system, and the settings used The purpose of this is to configure so that the abnormal value can be sensed and controlled when any one of the temperature and resistance values of the refrigerant is abnormal.

또한 냉매의 오염 및 열화에 의해 저항 값이 변동됨을 실시간으로 확임 함과 동시에 손쉽게 오염된 냉매를 교환할 수 있도록 구성하는 것에 그 목적이 있다.In addition, the purpose of this is to confirm in real time that the resistance value fluctuates due to contamination and deterioration of the refrigerant and to configure the contaminated refrigerant to be easily exchanged.

상기 목적을 달성하기 위하여 본 발명은 전력변환용 반도체와 기판을 일체화 한 열교환식 전력변환 반도체 패키지에 있어서, 전력변환 반도체 패키지을 냉각하기 위해 패키지의 일측부에 구성되는 입력 및 출력냉매 모듈부와, 입력 및 출력냉매 모듈부를 통하여 냉매가 순환 되도록 구성되는 냉매 순환로와, 냉매의 오염 및 열화에 의한 저항 R값의 변화를 센싱하기 위해 입력냉매 모듈부의 전단에 구성되는 저항센서와, 냉매순환로의 일측부에 냉매를 급수하기 위한 급수탱크와, 냉매순환로에는 필터, 냉매 순환용 펌프, 냉매쿨러, 디지털 압력스위치 및 공기빼기밸브가 조합 구성된다.In order to achieve the above object, the present invention is a heat exchange type power conversion semiconductor package in which a power conversion semiconductor and a substrate are integrated, an input and output refrigerant module unit configured on one side of the package to cool the power conversion semiconductor package, and an input And a refrigerant circulation path configured to circulate the refrigerant through the output refrigerant module part, a resistance sensor configured at the front end of the input refrigerant module part to sense a change in the resistance R value due to contamination and deterioration of the refrigerant, and at one side of the refrigerant circulation path. A water supply tank for supplying a refrigerant, and a filter, a refrigerant circulation pump, a refrigerant cooler, a digital pressure switch, and an air drain valve are combined in the refrigerant circulation path.

그리고 열교환식 전력변환 반도체 패키지의 내부에 냉매가 PCB기판과 전력변환용 반도체소자를 냉각하기 위한 기밀부를 포함하여 구성되며, 열교환식 반도체 패키지의 일 측부에 구성되는 가공홀에 PCB기판과의 통신선과 전원선을 밀폐 인출 가능하도록 실링고무가 구성된다.In addition, the refrigerant inside the heat exchange type power conversion semiconductor package includes an airtight part for cooling the PCB substrate and the power conversion semiconductor device, and a communication line with the PCB board and a communication line with the PCB board is provided in a processing hole formed on one side of the heat exchange type semiconductor package. Sealing rubber is configured to seal and draw power lines.

또한 냉매순환로에는 냉매의 순환을 제어하기 위한 4개의 솔레노이드 벨브는 각각 입력냉매 모듈부의 전단, 출력냉매 모듈부의 후단, 냉매순환로와 급수탱크의 사이 및 급수탱크의 전단부에 구성되어 냉매의 순환을 제어하며, 냉매의 오염 및 열화에 의해 변화된 저항 R값을 측정하는 저항센서는 입력냉매 모듈부에 구성되는 것을 특징으로 한다.In addition, in the refrigerant circulation path, four solenoid valves for controlling the circulation of refrigerant are configured at the front end of the input refrigerant module, the rear end of the output refrigerant module, between the refrigerant circulation path and the water supply tank, and at the front end of the water supply tank to control the circulation of the refrigerant. And, the resistance sensor for measuring the resistance R value changed by contamination and deterioration of the refrigerant is characterized in that it is configured in the input refrigerant module.

본 발명의 실시 예에 따른 전력변환 반도체패키지의 방열구조는 효율적으로 PCB기판과 전력변환용 반도체 소자를 동시에 냉각 가능하도록 하여 대 전류용 베터리 충·방전 시스템 및 ESS시스템을 안정적으로 운용할 수 있는 효과가 있다.The heat dissipation structure of the power conversion semiconductor package according to an embodiment of the present invention allows the PCB substrate and the power conversion semiconductor element to be efficiently cooled at the same time, thereby stably operating the high current battery charging/discharging system and the ESS system. There is.

또한 오염 및 열화된 냉매의 저항 R값을 실시간으로 센싱하여 그 결과 값에 따라 냉매를 신속히 교환하여 시스템을 안정적으로 운용 가능하게 하는 효과가 있다.In addition, the resistance R value of the contaminated and deteriorated refrigerant is sensed in real time, and the refrigerant is quickly exchanged according to the result, thereby enabling the system to operate stably.

도 1은 종래 전력변환 반도체패키지의 냉각 구조도.
도 2는 본 발명의 실시예에 따른 전력변환 반도체 패키지의 열교환 시스템 구조도.
도 3은 본 발명의 실시예에 따른 전력변환 반도체 패키지의 구조도.
1 is a cooling structure diagram of a conventional power conversion semiconductor package.
2 is a structural diagram of a heat exchange system of a power conversion semiconductor package according to an embodiment of the present invention.
3 is a structural diagram of a power conversion semiconductor package according to an embodiment of the present invention.

이하, 본 발명의 바람직한 실시예를 첨부된 도면들을 참조하여 상세히 설명한다. 우선 각 도면의 구성 요소들에 참조 부호를 부가함에 있어서, 동일한 구성 요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to elements of each drawing, it should be noted that the same elements have the same numerals as possible, even if they are indicated on different drawings. In addition, in describing the present invention, if it is determined that a detailed description of a related known configuration or function may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

또한, 이하에서 본 발명의 바람직한 실시예를 설명할 것이나, 본 발명의 기술적 사상은 이에 한정하거나 제한되지 않고 당업자에 의해 변형되어 다양하게 실시될 수 있음은 물론이다.In addition, a preferred embodiment of the present invention will be described below, but the technical idea of the present invention is not limited thereto or is not limited thereto, and may be modified and variously implemented by a person skilled in the art.

도 1은 종래의 전력변환 반도체 패키지의 냉각방식을 나타낸 것으로 패키지 내부에 다수개의 전력변환용 반도체 소자들의 리드선이 패키지 외부로의 실링고무를 통하여 패키지 외부에 구성되는 PCB기판에 연결 구성된다.1 shows a cooling method of a conventional power conversion semiconductor package. Lead wires of a plurality of power conversion semiconductor elements inside the package are connected to a PCB substrate configured outside the package through sealing rubber outside the package.

이처럼 종래의 전력변환 반도체 패키지의 냉각방식은 수많은 전력변환용 반도체소자(101)의 구동전원리드선의 인출로 인한 전력변환 반도체 패키지의 실링홀(102) 구성에 많은 문제점이 발생하였다. 따라서 이러한 문제점을 해결하기 위하여 패키지 내부의 전력변환용 소자와 패키지 외부의 PCB기판를 동시에 냉각시키기 위한 냉매의 입·출력부를 최소화함과 동시에 전력변환용 반도체소자의 리드선(103) 및 통신선 처리를 효율적으로 처리하기 위한 새로운 패키지의 설계가 요구된다.As described above, the conventional cooling method of the power conversion semiconductor package has many problems in the configuration of the sealing hole 102 of the power conversion semiconductor package due to the drawing out of the driving power lead lines of the numerous power conversion semiconductor devices 101. Therefore, in order to solve this problem, the input/output part of the refrigerant for cooling the power conversion element inside the package and the PCB board outside the package at the same time is minimized, and the lead wire 103 and the communication line of the power conversion semiconductor element are efficiently processed. The design of a new package to handle is required.

따라서 도 1의 종래기술의 문제점을 해결하기 위해 안출된 본원 발명의 도 2는 새로운 전력변환 반도체 패키지의 열교환 시스템 구조도를 나타내며, 도 3은 전력변환 반도체 패키지의 구조도를 나타내는 예시도이다.Accordingly, FIG. 2 of the present invention devised to solve the problems of the prior art of FIG. 1 is a structural diagram of a heat exchange system of a new power conversion semiconductor package, and FIG. 3 is an exemplary diagram showing the structure of a power conversion semiconductor package.

도 2의 전력변환용 반도체 소자와 PCB기판을 일체화 한 열교환식 전력변환 반도체 패키지의 방열 모듈을 냉각하기 위해 모듈의 일측 부에 구성되는 냉매 입력부 및 냉매 출력부(204, 205)와, 냉매 입력부 및 냉매 출력부를 통하여 냉매가 순환 되도록 구성되는 냉매순환로(206)와, 냉매의 오염 및 열화에 의한 저항값의 변화를 센싱하기 위해 입력냉매 모듈부(204')의 전단에 구성되는 저항센서(212)와, 냉매순환로(206)의 일측부에 구성되는 냉매 순환용 펌프(209)와, 냉매순환로의 일측부에 구성되는 냉매 쿨러(213) 및 냉매 쿨러 후단에 구성되는 급수탱크(207)로 이루어지진다.In order to cool the heat dissipation module of the heat exchange type power conversion semiconductor package in which the power conversion semiconductor element of FIG. 2 and the PCB substrate are integrated, the refrigerant input unit and the refrigerant output unit 204 and 205 are configured at one side of the module, and A refrigerant circulation path 206 configured to circulate the refrigerant through the refrigerant output unit, and a resistance sensor 212 configured at the front end of the input refrigerant module unit 204' to sense a change in resistance value due to contamination and deterioration of the refrigerant And, a refrigerant circulation pump 209 configured on one side of the refrigerant circulation path 206, a refrigerant cooler 213 configured on one side of the refrigerant circulation path, and a water supply tank 207 configured at a rear end of the refrigerant cooler. .

상기 열교환식 전력변환 반도체 패키지(201)의 방열구조에 있어서, 각각의 기술구성요소의 기능 및 연계 동작에 대하여 다음과 같이 상세히 설명하기로 한다.In the heat dissipation structure of the heat exchange type power conversion semiconductor package 201, the functions and linked operations of each technical component will be described in detail as follows.

우선 냉매는 열교환식 전력변환 반도체 패키지 내의 PCB기판(202)과 전력변환용 반도체소자(203)를 동시에 방열할 수 있도록 구성된 각각의 열교환식 전력변환 반도체 패키지(201)의 일측에 구성되는 냉매 입력부(204) 및 냉매 출력부(205)에 입력냉매 모듈부 및 출력냉매 모듈부(204', 205')가 연결 구성되는데, 이때 입력냉매 모듈부 및 출력냉매 모듈부(204', 205')에는 다수개의 열교환식 전력변환 반도체 패키지(201)가 구성될 수도 있다.First, the refrigerant is a refrigerant input unit configured on one side of each heat exchange type power conversion semiconductor package 201 configured to simultaneously radiate heat to the PCB substrate 202 and the power conversion semiconductor device 203 in the heat exchange type power conversion semiconductor package ( The input refrigerant module unit and the output refrigerant module unit 204' and 205' are connected to the refrigerant output unit 204 and the refrigerant output unit 205. At this time, the input refrigerant module unit and the output refrigerant module unit 204', 205' The heat exchange type power conversion semiconductor package 201 may be configured.

상기 냉매순환로(206)에 구성되는 4개의 SB(솔레노이드 벨브)는 급수탱크(207)에 냉매를 급수하기 위한 레벨센서(208)와, 상기 레벨센서(208)와 연동되어 냉매인 냉각수를 급수탱크(207)에 일정하게 유지하기 위한 SB1이 구성되고, 급수탱크(207)로 부터의 새로운 냉매를 냉매순환로(206)에 연결공급 또는 차단하기 위해 구성되는 SB2와, 냉매의 교환시 냉매를 효율적으로 교환하기 위한 입력냉매 모듈부(204')의 전단과 출력냉매 모듈부(205')의 후단부에 SB3, SB4가 별도로 구성된다.Four SBs (solenoid valves) configured in the refrigerant circulation path 206 include a level sensor 208 for supplying refrigerant to the water supply tank 207 and interlocking with the level sensor 208 to supply cooling water as a refrigerant to a water supply tank. SB1 is configured to keep it constant at 207, and SB2 is configured to connect or cut off new refrigerant from the water supply tank 207 to the refrigerant circulation path 206, and the refrigerant is efficiently exchanged when the refrigerant is exchanged. SB3 and SB4 are separately configured at the front end of the input refrigerant module unit 204' for replacement and the rear end of the output refrigerant module unit 205'.

특히 냉매를 교환할 필요가 있을 경우 SB2와 SB4를 차단하고, 냉매 순환용 펌프(209)에 압력을 가하여 냉매순환로(206)와 입력냉매 모듈부 및 출력냉매 모듈부(204', 205')로 부터 오염 및 열화된 냉매를 냉매 배출구(미도시)를 통하여 배출하게 된다.In particular, when it is necessary to exchange the refrigerant, the SB2 and SB4 are cut off, and pressure is applied to the refrigerant circulation pump 209 to the refrigerant circulation path 206, the input refrigerant module part and the output refrigerant module part 204', 205'. The contaminated and deteriorated refrigerant is discharged through a refrigerant outlet (not shown).

상기와 같이 새로운 냉매를 급수하기 위해서는 모든 SB(솔레노이드 벨브)를 on 시킴과 동시에 냉매 순환용 펌프(209)를 가동시키고, 또한 냉매순환로(206) 내에서 발생할 수 있는 기포를 제거하기 위해 공기빼기밸브(210)를 on시킨 상태로 펌프를 이용하여 냉매를 순환시킨다.In order to supply new refrigerant as described above, all SBs (solenoid valves) are turned on and the refrigerant circulation pump 209 is operated, and an air drain valve to remove air bubbles that may occur in the refrigerant circulation path 206 With (210) turned on, the refrigerant is circulated using a pump.

이때 냉매의 순환을 일정하게 하여 전력변환 반도체 패키지를 효율적으로 냉각시킬 수 있도록 냉매순환로(206)의 압력을 체크하기 위해 디지털 압력스위치(211)가 냉매 순환용 펌프(209)의 후단 부에 구성되고, 냉매순환로 내의 냉매의 온도를 최적으로 유지 시키기 위하여 냉매 순환용 펌프(209)의 후단에 냉매쿨러(213)가 추가 구성될 수 있다.At this time, a digital pressure switch 211 is configured at the rear end of the refrigerant circulation pump 209 in order to check the pressure in the refrigerant circulation path 206 so that the refrigerant circulation is constant so that the power conversion semiconductor package can be efficiently cooled. , In order to optimally maintain the temperature of the refrigerant in the refrigerant circulation path, a refrigerant cooler 213 may be additionally configured at the rear end of the refrigerant circulation pump 209.

그리고 상기 냉매순환로를 통하여 순환되는 냉매의 오염 및 열화에 의해 변화되는 저항 R값을 측정하게 되는데, 이때 저항 R값이 설정 기준치를 초과하게 되면 냉매를 교환하게 된다. 이때 사용되는 저항센서(212)는 냉매가 전력변환 반도체 패키지의 입력냉매 모듈부 및 출력냉매 모듈부(204', 205')와 냉매순환로(206)를 거처 순환하는 냉매의 저항 R값을 측정하게 되며, 냉매가 오염 및 열화되어 저항 R값으로의 영향을 최소화 하기 위하여 냉매 순환용 펌프(209)의 전단에 필터(214)를 추가 구성한다.In addition, the resistance R value changed due to contamination and deterioration of the refrigerant circulating through the refrigerant circulation path is measured. At this time, when the resistance R value exceeds a set reference value, the refrigerant is exchanged. The resistance sensor 212 used at this time allows the refrigerant to measure the resistance R value of the refrigerant circulating through the input refrigerant module unit and the output refrigerant module unit 204', 205' and the refrigerant circulation path 206 of the power conversion semiconductor package. And, in order to minimize the influence on the resistance R value due to contamination and deterioration of the refrigerant, a filter 214 is additionally configured at the front end of the refrigerant circulation pump 209.

상기와 같이 냉매순환로에 흐르는 냉매의 온도 또는 저항 R값 중 어느 하나가 설정된 기준값 대비 이상 여부가 확인되면 관리자에게 즉시 통보되고, 관리자는 냉매를 교환하는 등의 조치를 취하게 되는 것이다.As described above, if any one of the temperature of the refrigerant flowing in the refrigerant circulation path or the resistance R value is higher than the set reference value, the manager is immediately notified, and the manager takes measures such as replacing the refrigerant.

그리고 도3은 전력변환 반도체 패키지부를 확대한 것으로 전력변환용 반도체소자(203) 및 PCB기판(202)이 패키지에 구성되는 기밀부(301) 내부에 실장 되고, 기밀부(301)의 외부는 실리콘 또는 테프론 등의 고분자 합성수지에 의해 완전 밀폐처리된다. 이때 밀폐처리된 기밀부(301) 공간내부로 냉매 입력부(204)를 통하여 냉매가 주입되고, 주입된 냉매가 냉매 출력부(205)와 냉매순환로(206)을 거처서 순환 될 수 있도록 하여 전력변환용 반도체소자(203) 및 PCB기판(202)을 냉각할 수 있게 되는 것이다.3 is an enlarged view of the power conversion semiconductor package. The power conversion semiconductor device 203 and the PCB substrate 202 are mounted inside the hermetic part 301 configured in the package, and the outside of the hermetic part 301 is silicon Alternatively, it is completely sealed with a polymer synthetic resin such as Teflon. At this time, the refrigerant is injected through the refrigerant input unit 204 into the sealed airtight portion 301 space, and the injected refrigerant can be circulated through the refrigerant output unit 205 and the refrigerant circulation path 206 for power conversion. The semiconductor device 203 and the PCB substrate 202 can be cooled.

또한 전력변환 반도체 패키지(201)의 일측부에 구성되는 기밀부(301)에 가공홀(302)이 구성되며, 상기 가공홀(302)을 통하여 기밀부(301) 내부에 구성된 PCB기판(202)으로 부터의 전원선 및 통신선이 전력변환 반도체 패키지의 외부에 구성되는 제어부(미도시)와 연결 구성된다.In addition, a processing hole 302 is formed in an airtight portion 301 formed on one side of the power conversion semiconductor package 201, and the PCB substrate 202 configured inside the airtight portion 301 through the processing hole 302 The power line and communication line from the power conversion semiconductor package are connected to a control unit (not shown) configured outside of the power conversion semiconductor package.

상기 가공홀(302)은 오버 프레스에 의해 가공되며, 형성된 가공홀(302)은 전력변환 반도체 패키지에 구성된 기밀부(301) 내의 냉매가 외부로 누수되지 않도록 실리콘 재질의 실링고무(303)를 이용하여 통신선과 전원선을 외부의 제어부로 연결시킬 수 있도록 구성한다.The processing hole 302 is processed by overpressing, and the formed processing hole 302 uses a sealing rubber 303 made of silicon so that the refrigerant in the airtight portion 301 configured in the power conversion semiconductor package does not leak to the outside. Thus, the communication line and the power line are configured to be connected to an external control unit.

이처럼 센싱된 저항 R값은 통신선을 거처 제어부로 송신되며, 전력변환용 반도체소자(203)와 PCB기판(202)에 공급되는 전원선은 베터리 충·방전 테스트 장비(미도시) 또는 Ess시스템(미도시) 등에 연결구성되어 사용된다.The sensed resistance R value is transmitted to the control unit via the communication line, and the power line supplied to the power conversion semiconductor device 203 and the PCB board 202 is a battery charging/discharging test equipment (not shown) or an Ess system (not shown). City) is connected to and used.

이상과 같이 제어부에 수신되는 냉매의 저항 R값은 제어부에 설정된 기준값 대비 그 이상일 경우 반도체 패키지 모듈에 공급되는 전원을 차단하고 냉매를 교환하게 되며, 센싱된 냉매의 온도가 설정된 기준값 이상일 경우에는 전력변환용 반도체 소자의 정격값을 기준으로 전압, 전류 및 임피던스값을 체크하여 전력변환용 반도체 소자의 이상동작을 체크하여 그에 상응하는 조치를 취하게 된다. As described above, when the resistance R value of the refrigerant received by the control unit is higher than the reference value set in the control unit, the power supplied to the semiconductor package module is cut off and the refrigerant is exchanged. When the sensed refrigerant temperature is higher than the set reference value, power conversion Voltage, current, and impedance values are checked based on the rated value of the semiconductor device for power conversion, and the abnormal operation of the semiconductor device for power conversion is checked, and corresponding measures are taken.

이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위 내에서 다양한 수정, 변경 및 치환이 가능할 것이다.The above description is merely illustrative of the technical idea of the present invention, and those of ordinary skill in the technical field to which the present invention belongs can make various modifications, changes, and substitutions within the scope not departing from the essential characteristics of the present invention. will be.

따라서, 본 발명에 개시된 실시예 및 첨부된 도면들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예 및 첨부된 도면에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments and the accompanying drawings. . The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

101, 203: 전력변환용 반도체 소자
102: 실링홀
103: 리드선
201: 전력변환 반도체 패키지
202: PCB기판
203: 전력변환용 반도체 소자
204: 냉매 입력부
204': 입력냉매 모듈부
205: 냉매 출력부
205': 출력냉매 모듈부
206: 냉매순환로
207: 급수탱크
208: 레벨센서
209: 냉매 순환용 펌프
210: 공기빼기벨브
211: 디지털 압력스위치
212: 저항센서
213: 냉매쿨러
214: 필터
301: 기밀부
302: 가공홀
303: 실링고무
101, 203: semiconductor device for power conversion
102: sealing hole
103: lead wire
201: power conversion semiconductor package
202: PCB board
203: semiconductor device for power conversion
204: refrigerant input unit
204': input refrigerant module part
205: refrigerant output unit
205': output refrigerant module part
206: refrigerant circulation path
207: water supply tank
208: level sensor
209: refrigerant circulation pump
210: air bleed valve
211: digital pressure switch
212: resistance sensor
213: refrigerant cooler
214: filter
301: confidential
302: machining hole
303: sealing rubber

Claims (6)

전력변환용 반도체와 기판을 일체화 한 열교환식 전력변환 반도체 패키지에 있어서,
상기 전력변환 반도체 패키지을 냉각하기 위해 패키지의 일측부에 구성되는 입력냉매 모듈부 및 출력냉매 모듈부;
상기 입력냉매 모듈부 및 출력냉매 모듈부를 통하여 냉매가 순환 되도록 구성되는 냉매순환로;
상기 냉매의 오염 및 열화에 의한 저항 R값의 변화를 센싱하기 위해 입력냉매 모듈부의 전단에 구성되는 저항센서;
상기 냉매순환로의 일측부에 냉매를 급수하기 위한 급수탱크;
상기 냉매순환로에는 필터, 냉매 순환용 펌프, 냉매쿨러, 디지털 압력스위치 및 공기빼기밸브가 조합 구성되고,
상기 냉매의 오염 및 열화에 의해 변화된 저항 R값을 측정하는 저항센서는 입력냉매 모듈부에 구성되는 것을 특징으로 하는 전력변환용 반도체 패키지의 방열구조.
In the heat exchange type power conversion semiconductor package in which the power conversion semiconductor and the substrate are integrated,
An input refrigerant module unit and an output refrigerant module unit configured on one side of the package to cool the power conversion semiconductor package;
A refrigerant circulation path configured to circulate refrigerant through the input refrigerant module unit and the output refrigerant module unit;
A resistance sensor configured at a front end of the input refrigerant module to sense a change in the resistance R value due to contamination and deterioration of the refrigerant;
A water supply tank for supplying refrigerant to one side of the refrigerant circulation path;
In the refrigerant circulation path, a filter, a refrigerant circulation pump, a refrigerant cooler, a digital pressure switch, and an air drain valve are combined,
The heat dissipation structure of a semiconductor package for power conversion, characterized in that the resistance sensor for measuring the resistance R value changed by contamination and deterioration of the refrigerant is configured in an input refrigerant module.
제1항에 있어서,
상기 열교환식 전력변환 반도체 패키지의 내부에 냉매가 PCB기판과 전력변환용 반도체소자를 냉각하기 위한 기밀부를 포함하여 구성되는 것을 특징으로 하는 전력변환용 반도체 패키지의 방열구조.
The method of claim 1,
The heat dissipation structure of the semiconductor package for power conversion, characterized in that the refrigerant comprises an airtight portion for cooling the PCB substrate and the power conversion semiconductor element in the heat exchange type power conversion semiconductor package.
제2항에 있어서,
상기 열교환식 전력변환 반도체 패키지의 일 측부에 구성되는 가공홀에 PCB기판과의 통신선과 전원선을 밀폐 인출 가능하도록 실링고무가 구성되는 것을 특징으로 하는 전력변환용 반도체 패키지의 방열구조.
The method of claim 2,
The heat dissipation structure of a semiconductor package for power conversion, characterized in that the sealing rubber is configured to seal and draw out the communication line and the power line with the PCB substrate in a processing hole formed on one side of the heat exchange type power conversion semiconductor package.
제1항에 있어서,
상기 냉매순환로에는 냉매의 순환을 제어하기 위하여 4개의 솔레노이드 벨브가 구성되는 것을 특징으로 하는 전력변환용 반도체 패키지의 방열구조.
The method of claim 1,
The heat dissipation structure of a semiconductor package for power conversion, characterized in that four solenoid valves are configured in the refrigerant circulation path to control circulation of the refrigerant.
제4항에 있어서,
상기 4개의 솔레노이드 벨브는 각각 입력냉매 모듈부의 전단, 출력냉매 모듈부의 후단, 냉매순환로와 급수탱크의 사이 및 급수탱크의 전단부에 구성되어 냉매의 순환을 제어하는 것을 특징으로 하는 전력변환용 반도체 패키지의 방열구조.
The method of claim 4,
The four solenoid valves are respectively configured at a front end of the input refrigerant module unit, a rear end of the output refrigerant module unit, between the refrigerant circulation path and the water supply tank, and at the front end of the water supply tank to control circulation of the refrigerant. Heat dissipation structure.
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