KR102035685B1 - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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Publication number
KR102035685B1
KR102035685B1 KR1020110080267A KR20110080267A KR102035685B1 KR 102035685 B1 KR102035685 B1 KR 102035685B1 KR 1020110080267 A KR1020110080267 A KR 1020110080267A KR 20110080267 A KR20110080267 A KR 20110080267A KR 102035685 B1 KR102035685 B1 KR 102035685B1
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South Korea
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light emitting
emitting cell
substrate
conductive
semiconductor layer
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KR1020110080267A
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Korean (ko)
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KR20130017688A (en
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이범연
장기연
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엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The embodiment relates to a light emitting device and a method of manufacturing the same. A light emitting device according to an embodiment includes a substrate, a first light emitting cell positioned on the substrate, a second light emitting cell positioned on the substrate, spaced apart from the first light emitting cell, and positioned on the substrate, wherein the first light emitting cell And a conductive layer disposed between the second light emitting cell and an electrically connecting portion between the first light emitting cell and the second light emitting cell, and an adhesive layer between the conductive part and the substrate. The light emitting device according to the embodiment can improve reliability and luminous efficiency.

Description

Light emitting device and manufacturing method thereof

The embodiment relates to a light emitting device and a method of manufacturing the same.

Fluorescent lamps are increasingly being replaced by other light sources because they are against the trend of the future lighting market aiming to be environmentally friendly due to frequent replacement and the use of fluorescent materials.

The most popular light source is a light emitting diode (LED), which converts an electrical signal into an infrared, visible or light form using the characteristics of a compound semiconductor. In addition to the advantages of low power consumption and environmentally friendly and high energy saving effect, it is considered as the next generation light source. Therefore, utilization of light emitting diodes to replace existing fluorescent lamps is actively underway.

Recently, light emitting diodes that can be driven under high voltage have been developed and commercialized, which includes an array of light emitting cells connected in series to each other on a single substrate. As the light emitting cells are connected in series, an operating voltage of each light emitting cell is added to increase a driving voltage of the light emitting diode, and thus can be driven under a high voltage such as a voltage of a home power supply. For example, a light emitting diode that can be directly connected to a high voltage AC power source or a high voltage DC power source is referred to as "Light-EMITTING DEVICE HAVING LIGHT-EMITTINGELEMENTS" in WO 2004/023568 (Al). The title was disclosed by SAKAI et al. The light emitting device arranges the light emitting cells in a matrix form and connects the light emitting cells through a wire to form a series array of light emitting cells. Such a light emitting device has a problem in that a separate process must be performed for each light emitting cell when wirings connecting the light emitting cells are formed.

The embodiment can improve the reliability of the light emitting device by electrically connecting the light emitting cells included in the light emitting device using a conductive part instead of wire bonding, and simplify the process by uniformly connecting a plurality of light emitting cells using the conductive part. The present invention provides a light emitting device and a method of manufacturing the same.

A light emitting device according to an embodiment includes a substrate, a first light emitting cell positioned on the substrate, a second light emitting cell positioned on the substrate, spaced apart from the first light emitting cell, and positioned on the substrate, wherein the first light emitting cell And a conductive layer disposed between the second light emitting cell and an electrically connecting portion between the first light emitting cell and the second light emitting cell, and an adhesive layer between the conductive part and the substrate.

In a method of manufacturing a light emitting device according to an embodiment, forming a first light emitting cell and a second light emitting cell spaced apart from the first light emitting cell on a first substrate, forming a conductive part on a second substrate, and the conductive part Disposing an upper portion of the first substrate and an upper portion of the second substrate so as to be disposed between the first and second light emitting cells to electrically connect the first and second light emitting cells. And removing the second substrate.

The light emitting device and the method of manufacturing the same according to the embodiment can improve the reliability and luminous efficiency of the light emitting device by electrically connecting the light emitting cells included in the light emitting device using a conductive part instead of wire bonding. Can be connected uniformly, simplifying the process.

1 is a plan view showing a plane of a light emitting device according to an embodiment.
2 is a cross-sectional view illustrating a cross section of the light emitting device according to the embodiment of FIG. 1.
3 to 8 are views illustrating a manufacturing process of the light emitting device according to the embodiment.
9 is a cross-sectional view of a light emitting device package according to the embodiment.
10A is a perspective view illustrating a lighting apparatus according to an embodiment, and FIG. 10B is a cross-sectional view illustrating a cross-sectional view taken along line AA ′ of the lighting apparatus of FIG. 10A.
11 is an exploded perspective view illustrating a backlight unit according to an embodiment.
12 is an exploded perspective view illustrating a backlight unit according to an embodiment.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

The spatially relative terms " below ", " beneath ", " lower ", " above ", " upper " It may be used to easily describe the correlation of a device or components with other devices or components. Spatially relative terms are to be understood as terms that include different directions of the device in use or operation in addition to the directions shown in the figures. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.

In addition, the angle and direction mentioned in the process of describing the structure of the light emitting device in the embodiment are based on those described in the drawings. In the description of the structure constituting the light emitting device in the specification, if the reference point and the positional relationship with respect to the angle is not clearly mentioned, reference is made to related drawings.

1 is a plan view illustrating a plane of a light emitting device according to an embodiment, and FIG. 2 is a cross-sectional view illustrating a cross section of the light emitting device according to the embodiment of FIG. 1.

Referring to FIG. 1, the light emitting device 100 according to the embodiment may include a plurality of light emitting cells 120 formed on the substrate 110.

The plurality of light emitting cells 120 may be arranged in a matrix structure, which may be variously arranged in three rows, three columns, three rows, five columns, three rows, seven columns, and the like, but is not limited thereto. In FIG. 1, for example, the light emitting devices 100 in which the plurality of light emitting cells 120 are arranged in the form of three rows and three columns may be operated, and as shown in FIG. 1, the light emitting cells 120 may operate at a high driving voltage. In addition, by using the plurality of light emitting cells 120, the brightness of the light emitting device 100 can be increased.

The conductive part 130 is required to electrically connect the plurality of light emitting cells 120 in the light emitting device 100 as described above. In FIG. 1, the planar shape of the conductive part 130 connecting the plurality of light emitting cells 120 is shown as 'H' shape, but the planar shape of the conductive part 130 is 'L' shape, 'S' It may have various forms such as a ruler shape, but is not limited thereto.

2, the light emitting device 100 according to the embodiment may include a substrate 110, a first light emitting cell 121, a second light emitting cell 122, a conductive part 130, an adhesive layer 140, and an insulating layer. 150 may be included.

The substrate 110 may be selected from the group consisting of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, Ga 2 O 3 , GaAs, and the like.

The first light emitting cell 121 may be positioned on the substrate 110, and the second light emitting cell 122 may be positioned to be spaced apart from the first light emitting cell 121.

The first light emitting cell 121 and the second light emitting cell 122 include a light emitting structure including a buffer layer 10, a first conductive semiconductor layer 21, an active layer 22, and a second conductive semiconductor layer 23. 20 may be included.

The buffer layer 10 is positioned on the substrate 110 and may be formed of a combination of Group 3 and Group 5 elements, or any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and may be doped with dopants. have.

An undoped semiconductor layer (not shown) may be formed on the buffer layer 10, and either or both of the buffer layer 10 and the undoped conductive semiconductor layer (not shown) may or may not be formed. However, the structure is not limited.

The first conductive semiconductor layer 21, the active layer 22, and the second conductive semiconductor layer 23 are sequentially positioned on the buffer layer 10.

The first conductive semiconductor layer 21 is a semiconductor material having a compositional formula of Al x In y Ga (1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1), for example For example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN may be formed. It may also be formed using other Group 5 elements instead of N. For example, it may be formed of any one or more of AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. In addition, when the first conductivity type semiconductor layer 21 is an N type conductivity type semiconductor layer, for example, Si, Ge, Sn, Se, Te, or the like may be included as the N type impurity.

Active layer 22, e.g., including a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may be formed, and may be formed of a single quantum well structure or a multi quantum well structure (MQW).

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the probability of recombination of electrons and holes can be increased, thereby improving the light emitting effect. In addition, a quantum wire structure or a quantum dot structure may be included.

The second conductive semiconductor layer 23 may be implemented as a p-type conductive semiconductor layer to inject holes into the active layer 22. For example, the p-type conductive semiconductor layer is a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example For example, it may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

A transmissive electrode layer (not shown) may be positioned on the second conductivity type semiconductor layer 23.

The transparent electrode layer (not shown) includes indium tin oxide (ITO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and IAZO ( indium aluminum zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO / Ni, AZO / Ag, IZO / Ag / Ni, It may be formed of at least one of AZO / Ag / Ni, IrO x , RuO x , RuO x / ITO, Ni / IrO x / Au, or Ni / IrO x / Au / ITO. However, it is not limited thereto.

The conductive part 130 is positioned to be in contact with the first conductive semiconductor layer 21 of the first light emitting cell 121 and the second conductive semiconductor layer 23 of the second light emitting cell 122, and thus, the first light emitting cell may be used. The 121 and second light emitting cells 122 may be electrically connected to each other.

In addition, a first stepped portion 30 is formed on an upper surface of the first conductive semiconductor layer 21 of the first light emitting cell 121 and an upper surface of the second conductive semiconductor layer 223 of the second light emitting cell 122. The second stepped portion 40 may be formed, and the shape of the first stepped portion 30 and the shape of the second stepped portion 40 may be different or symmetrical, such that at least a portion of the conductive portion 130 is formed. The first stepped part 30 or the second stepped part 40 may be positioned on the upper surface of the conductive part 130.

The conductive part 130 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), and tin. (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru) and iron (Fe) may include one or more materials or alloys. In addition, the conductive portion 130 may be formed to have a single layer or a multilayer structure, but is not limited thereto.

The insulating layer 150 is positioned between the conductive part 130 and the first light emitting cell 1231 or between the conductive part 130 and the second light emitting cell 122, so that the first light emitting cell 121 or the second light emitting part is disposed. The cell 122 can be prevented from being electrically shorted. The insulating layer 150 contacts the side surfaces of the first conductive semiconductor layer 21, the second conductive semiconductor layer 23, and the active layer 22 of the first light emitting cell 121 or the second light emitting cell 122. It may be positioned so as to be, and may be formed of an insulating material.

The insulating layer 150 may include a first insulating layer 151 and a second insulating layer 152. The first insulating layer 151 is formed from a portion of the side surface of the first conductive semiconductor layer 21 of the first light emitting cell 121 to the side edge of the second conductive semiconductor layer 23 of the first light emitting cell 121. Thus, the first light emitting cell 121 may be prevented from shorting.

In addition, the second insulating layer 152 may have a side surface of the first conductive semiconductor layer 21 of the second light emitting cell 122 on a part of the side surface of the second conductive semiconductor layer 23 of the second light emitting cell 122. Formed to the end, it is possible to prevent the second light emitting cell 122 from being shorted.

The first insulating layer 151 may be formed smaller than the length of the second insulating layer, the thickness of the first insulating layer 151 may be thicker than the thickness of the second insulating layer 152.

The adhesive layer 140 may be positioned between the substrate 110 and the conductive portion 150 to adhere and fix the conductive portion 150 to the substrate 110.

The adhesive layer 140 may be a tape, an adhesive, or the like, and may be, for example, a blue tape for an IC.

Referring back to FIG. 2, the third light emitting cell 123 is positioned on the substrate 110 to be spaced apart from the first light emitting cell 121 and the second light emitting cell 122 and adjacent to the second light emitting cell 122. can do.

The conductive part 130 may be disposed between the second light emitting cell 122 and the third light emitting cell 123 to electrically connect the second light emitting cell 122 and the third light emitting cell 123.

In addition, the insulating layer 150 and the adhesive layer 140 may be disposed between the second light emitting cell 122 and the third light emitting cell 123.

3 to 8 illustrate a method of manufacturing a light emitting device according to an embodiment.

Referring to FIG. 3, a buffer layer 10, a first conductivity type semiconductor layer 21, an active layer 22, and a second conductivity type semiconductor layer 23 are sequentially formed on the first substrate 101.

The first substrate 101 may be selected from the group consisting of sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, GaAs, and the like, and is the same as the substrate 110 described with reference to FIG. 1. can do.

The buffer layer 10 may be formed of a combination of Group 3 and Group 5 elements, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and dopants may be doped.

An undoped semiconductor layer (not shown) may be formed on the first substrate 101 or the buffer layer 10, and any one or two layers of a buffer layer (not shown) and an undoped conductive semiconductor layer (not shown) may be provided. All may or may not be formed, but are not limited to this structure.

The first conductive semiconductor layer 21, the active layer 22, and the second conductive semiconductor layer 23 may be sequentially formed on the first substrate 101.

The first conductive semiconductor layer 21 injects silane gas (SiH 4) containing N-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3), nitrogen gas (N 2), and silicon (Si) into the chamber. Can be formed.

The first conductive semiconductor layer 21 is a semiconductor material having a compositional formula of Al x In y Ga (1-xy) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1), for example For example, at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN may be formed. It may also be formed using other Group 5 elements instead of N. For example, it may be formed of any one or more of AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, and InP. In addition, when the first conductivity type semiconductor layer 21 is an N type conductivity type semiconductor layer, for example, Si, Ge, Sn, Se, Te, or the like may be included as the N type impurity.

The active layer 22 may be grown in a nitrogen atmosphere while injecting trimethyl gallium gas (TMGa) and trimethyl indium gas (TMIn), and a single quantum well structure, a multi quantum well structure (MQW), and a quantum line It may be formed of at least one of a wire structure or a quantum dot structure.

Active layer 22, e.g., including a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may be formed, and may be formed of a single quantum well structure or a multi quantum well structure (MQW).

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the probability of recombination of electrons and holes can be increased, thereby improving the light emitting effect. In addition, a quantum wire structure or a quantum dot structure may be included.

The second conductive semiconductor layer 23 is formed in a chamber of 960? At high temperatures, hydrogen may be used as a carrier gas to inject trimethyl gallium gas (TMGa), trimethyl aluminum gas (TMAl), bicetyl cyclopentadienyl magnesium (EtCp2Mg) {Mg (C2H5C5H4) 2}, or the like. It is not limited.

The second conductive semiconductor layer 23 may be implemented as a p-type conductive semiconductor layer to inject holes into the active layer 22. For example, the p-type conductive semiconductor layer is a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example For example, it may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

In addition, the first conductive semiconductor layer 21, the active layer 22, and the second conductive semiconductor layer 23 may be formed by metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). Deposition), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Sputtering It may be formed using, but is not limited thereto.

A transmissive electrode layer (not shown) may be formed on the second conductive semiconductor layer 23.

The transparent electrode layer (not shown) is in ohmic contact with an upper surface of the light emitting structure (eg, the second conductive semiconductor layer 23), and may be formed in a layer or a plurality of patterns, and may be formed on the second conductive semiconductor layer 23. Uniform current can be supplied.

In addition, the transparent electrode layer (not shown) may be formed by a sputtering method or an electron beam deposition method.

Referring to FIG. 4, the first light emitting cell 121 and the second light emitting cell are patterned by patterning the second conductive semiconductor layer 23, the active layer 22, the first conductive semiconductor layer 21, and the buffer layer 10. The 122 may be formed to be spaced apart from each other. In addition, a portion of the upper surface of the first conductive semiconductor layer 21 may be exposed by etching from the second conductive semiconductor layer 23 to the first conductive semiconductor layer 21.

Each of these layers can be patterned using photo and etching techniques. For example, a photoresist pattern is formed on the second conductive semiconductor layer 23 to separate the first light emitting cell 121 and the second light emitting cell 122, and the photoresist pattern is used as an etching mask. The second conductive semiconductor layer 23, the active layer 22, and the first conductive semiconductor layer 21 are sequentially etched. Accordingly, the first light emitting cell 121 and the second light emitting cell 122 may be spaced apart by a predetermined distance.

Thereafter, photoresist patterns defining the exposed regions of the first conductivity-type semiconductor layer 21 are formed on the first and second light emitting cells 121 and 122 spaced apart from each other, and are used as an etching mask. The second conductive semiconductor layer 23 and the active layer 22 are sequentially etched to expose a portion of the upper surface of the first conductive semiconductor layer 21. The etching process may be performed by a wet or dry etching process. The dry etching process may be a dry etching process using plasma.

Alternatively, unlike the above, the second conductive semiconductor layer 23, the active layer 22, and the first conductive semiconductor layer 21 are sequentially etched to expose the top surface of the first conductive semiconductor layer 21 first. The first light emitting cell 121 and the second light emitting cell 122 may be separated by patterning the exposed first conductive semiconductor layer 21 again.

By the separation process as described above, like the light emitting device 100 of FIG. 1, the plurality of light emitting cells 120 including the first light emitting cells 121 and the second light emitting cells 122 may be formed in a matrix structure. For example, it may be formed in a structure such as three rows three columns, three rows five columns, three rows seven columns.

The plurality of light emitting cells 120 may have the same structure and shape, and may form the same distance between the light emitting cells 120 in the same row.

In order to electrically connect the plurality of light emitting cells 120 formed as described above, as illustrated in FIGS. 5 and 6, a plurality of conductive parts 130 may be formed on the second substrate 102.

Referring to FIGS. 5A and 5B, the second substrate 102 may be an SiO 2 or SiN substrate, but is not limited thereto.

The pattern layer 160 may be formed on the second substrate 102, and the first adhesive layer 170 may be formed on the pattern layer 160 using a tape or an adhesive such as an IC blue tape.

The pattern may not be formed at the location 165 where the conductive portion 130 of the pattern layer 160 is to be formed.

 Referring to FIG. 6, the conductive part 130 may be attached onto the first adhesive layer 170. In this case, the conductive part 130 may be adhered only to the first adhesive layer 170 of the region 165 having no pattern.

The conductive part 130 may be manufactured in various shapes corresponding to the shape of the space between the first light emitting cell 121 and the second light emitting cell 122 by a separate process.

In this case, the insulating layer 150 may be formed on a part of the side surface of the conductive part 130 or the insulating layer 150 may be formed on the part of the side surface of the first light emitting cell 121 or the part of the side surface of the second light emitting cell 122. Can be.

When the insulating layer 150 is formed as described above, when the conductive part 130 is positioned between the first light emitting cell 121 and the second light emitting cell 122, the first light emitting cell is formed by the conductive part 130. It is possible to prevent the 121 and the second light emitting cells 122 from being electrically shorted.

In addition, as illustrated in FIG. 6, the second adhesive layer 140 may be formed on the conductive portion 130, or although not illustrated, the second adhesive layer 140 may be formed on the first substrate 101. have. The second adhesive layer 140 may be formed of a tape, an adhesive, or the like, and may be formed of, for example, an IC blue tape.

 7 and 8, the conductive part 130 is disposed between the first light emitting cell 121 and the second light emitting cell 122, and the first light emitting cell 121 and the second light emitting cell. An upper portion of the first substrate 101 and an upper portion of the second substrate 102 facing each other with respect to the conductive portion 130 may be positioned to electrically connect the 122.

When positioned as described above, the conductive part 130 may be adhered to and fixed to the first substrate 101 by the second adhesive layer 140.

Referring to FIG. 8, at this time, a process such as applying pressure to the second substrate 102 may be added, and when pressurized, the upper surface of the first light emitting cell 121 or the second light emitting cell 122 may be added. A stepped portion may be formed on the upper surface.

Thereafter, the second substrate 102, the pattern layer 160, and the first adhesive layer 170 may be removed.

In addition, at least one process may be reversed in the process sequence illustrated in FIGS. 3 to 8, but is not limited thereto.

9 is a cross-sectional view showing a cross section of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 9, the light emitting device package 200 according to the embodiment includes a body 220 in which a cavity is formed, a light source unit 100 mounted in a cavity of the body 220, and an encapsulant 240 filled in a cavity. can do.

The body 220 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photosensitive glass (PSG), polyamide 9T (PA9T) ), Neo geotactic polystyrene (SPS), a metal material, sapphire (Al2O3), beryllium oxide (BeO), a printed circuit board (PCB, Printed Circuit Board), it may be formed of at least one. The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The light source unit 100 may be mounted on the bottom surface of the body 220. For example, the light source unit 100 may be a light emitting device manufactured by the manufacturing method illustrated and described with reference to FIGS. 1 to 8. The light emitting device may be, for example, a colored light emitting device emitting light of red, green, blue, white, or the like, or an ultraviolet (UV) light emitting device emitting ultraviolet light, but is not limited thereto. In addition, one or more light emitting devices may be mounted.

The body 220 may include a first electrode 231 and a second electrode 232. The first electrode 231 and the second electrode 232 may be electrically connected to the light source unit 100 to supply power to the light source unit 100.

In addition, the first electrode 231 and the second electrode 232 may be electrically separated from each other, and may reflect light generated from the light source unit 100 to increase light efficiency, and also generate heat generated from the light source unit 100. Can be discharged to the outside.

9 illustrates that the first electrode 231 and the second electrode 232 are bonded to the light source unit 100 by wires, but are not limited thereto. The first electrode 231 and the second electrode 232 are not limited thereto. Any one may be bonded to the light source unit 100 by a wire, or may be electrically connected to the light source unit 100 without a wire by a flip chip method.

The first electrode 231 and the second electrode 232 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum ( Ta, platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium ( Ge), hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. In addition, the first electrode 231 and the second electrode 232 may be formed to have a single layer or a multi-layer structure, but is not limited thereto.

The resin encapsulant 240 may be filled in the cavity, and may include a phosphor (not shown). The resin encapsulation member 240 may be formed of transparent silicone, epoxy, and other resin materials, and may be formed by filling in a cavity and then UV or thermal curing.

The phosphor (not shown) may be selected according to the wavelength of the light emitted from the light source unit 100 so that the light emitting device package 200 may implement light of various colors such as white light, red light, green light, and blue light.

Phosphors (not shown) included in the encapsulant 240 may include blue light emitting phosphors, cyan light emitting phosphors, green light emitting phosphors, yellow green light emitting phosphors, yellow light emitting phosphors, and yellow red light emittings according to wavelengths of light emitted from the light source unit 100. One of the phosphor, the orange luminescent phosphor, and the red luminescent phosphor can be applied.

That is, the phosphor (not shown) may be excited by the light having the first light emitted from the light source unit 100 to generate the second light. For example, when the light source unit 100 is a blue light emitting diode and the phosphor (not shown) is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue generated from the blue light emitting diode As yellow light generated by being excited by light is mixed, the light emitting device package 200 may provide white light.

Meanwhile, a lens (not shown) may be further formed on the light emitting device package 200 according to the embodiment. The shape of the lens may be arranged in various shapes such as a hemispherical shape, a polygon, a shape in which the center part is concave, and may be formed of a resin material such as silicone or epoxy, a polymer material, and a glass material.

Meanwhile, a plurality of light emitting device packages 200 according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package 200. .

The light emitting device package 200, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package 200 described in the above-described embodiments. For example, the lighting system may include a lamp and a street lamp. Can be.

10A is a perspective view illustrating a lighting apparatus according to an embodiment, and FIG. 10B is a cross-sectional view illustrating a cross-sectional view taken along line A-A 'of the lighting apparatus of FIG.

Hereinafter, in order to describe the shape of the lighting apparatus 300 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 300, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

That is, FIG. 10B is a cross-sectional view of the lighting apparatus 300 of FIG. 10A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

10A and 10B, the lighting device 300 may include a body 310, a cover 330 fastened to the body 310, and a closing cap 350 positioned at both ends of the body 310. have.

The lower surface of the body 310 is fastened to the light emitting device module 340, the body 310 is conductive so that the heat generated in the light emitting device package 344 can be discharged to the outside through the upper surface of the body 310 And it may be formed of a metal material having an excellent heat dissipation effect.

The light emitting device package 344 may be mounted on the PCB 342 in a multi-colored, multi-row array to form an array. The light emitting device package 344 may be mounted at the same interval or may be mounted with various separation distances as necessary to adjust brightness. . The PCB 342 may be a metal core PCB (MCPCB) or a PCB made of FR4.

Meanwhile, the light emitting device package 344 may include a plurality of holes and a film made of a conductive material.

Since a film formed of a conductive material such as a metal causes a lot of interference of light, the intensity of the light wave may be strengthened by the interaction of the light wave, thereby effectively extracting and diffusing the light. The interference and diffraction of the light can effectively extract the light. Therefore, the efficiency of the lighting device 300 can be improved. At this time, the size of the plurality of holes formed in the film is preferably smaller than the wavelength of the light generated from the light source.

The cover 330 may be formed in a circular shape to surround the lower surface of the body 310, but is not limited thereto.

The cover 330 protects the light emitting device module 340 from the outside and the like. In addition, the cover 330 may include diffusing particles to prevent glare of the light generated from the light emitting device package 344, and to uniformly emit light to the outside, and at least of the inner and outer surfaces of the cover 330 A prism pattern or the like may be formed on either side. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 330.

On the other hand, since the light generated from the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated by the light emitting device package 344. The cover 330 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

Closing cap 350 is located at both ends of the body 310 may be used for sealing the power supply (not shown). In addition, the closing cap 350 is formed with a power pin 352, the lighting device 300 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

11 is an exploded perspective view illustrating a backlight unit according to an embodiment.

11 is an edge-light method, the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410.

The liquid crystal display panel 410 may display an image using light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with the liquid crystal interposed therebetween.

The color filter substrate 412 may implement a color of an image displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to the printed circuit board 418 on which a plurality of circuit components are mounted through the driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 may convert the light provided from the light emitting device module 420, the light emitting device module 420 into a surface light source, and provide the light guide plate 430 to the liquid crystal display panel 410. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 430 and the plurality of films 450, 460, 464 to uniform the luminance distribution of the light provided from the 430 and improve the vertical incidence ( 440).

The light emitting device module 420 may include a PCB substrate 422 such that a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 may be mounted to form an array.

In particular, the light emitting device package 424 includes a film in which a plurality of holes are formed on the light emitting surface, so that the lens may be omitted, thereby implementing a slim light emitting device package and simultaneously improving light extraction efficiency. Therefore, the thinner backlight unit 470 can be implemented.

On the other hand, the backlight unit 470 is a diffusion film 460 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410, and a prism film 450 for condensing the diffused light to improve vertical incidence. It may be configured as), and may include a protective film 464 for protecting the prism film 450.

12 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

However, the parts shown and described in FIG. 11 will not be repeatedly described in detail.

12 illustrates a direct method, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 5, a detailed description thereof will be omitted.

The backlight unit 570 includes a plurality of light emitting device modules 523, a reflective sheet 524, a lower chassis 530 in which the light emitting device modules 523 and the reflective sheet 524 are accommodated, and an upper portion of the light emitting device module 523. It may include a diffusion plate 540 and a plurality of optical film 560 disposed in the.

Light emitting device module 523 A plurality of light emitting device packages 522 may be mounted to include a PCB substrate 521 to form an array.

In particular, the light emitting device package 522 is formed of a conductive material, and by providing a film including a plurality of holes on the light emitting surface, it is possible to omit the lens to implement a slim light emitting device package, at the same time light extraction efficiency Can improve. Therefore, the thinner backlight unit 570 can be implemented.

The reflective sheet 524 reflects the light generated from the light emitting device package 522 in the direction in which the liquid crystal display panel 510 is located to improve light utilization efficiency.

Meanwhile, the light generated by the light emitting device module 523 is incident on the diffusion plate 540, and the optical film 560 is disposed on the diffusion plate 540. The optical film 560 includes a diffusion film 566, a prism film 550, and a protective film 564.

The lighting system may include the lighting device and the backlight unit described above with reference to FIGS. 10 to 12.

Although the above has been illustrated and described with respect to preferred embodiments of the present invention, the present invention is not limited to the specific embodiments described above, but in the art to which the invention pertains without departing from the spirit of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

110: substrate 121: the first light emitting cell
122: second light emitting cell 130: conductive portion
140: adhesive layer 150: insulating layer

Claims (26)

Board;
A first light emitting cell on the substrate;
A second light emitting cell on the substrate and spaced apart from the first light emitting cell;
A conductive part disposed on the substrate and positioned between the first light emitting cell and the second light emitting cell to electrically connect the first light emitting cell and the second light emitting cell; And
An adhesive layer between the conductive portion and the substrate,
The first light emitting cell and the second light emitting cell include a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer,
The conductive part is positioned in contact with the first conductive semiconductor layer of the first light emitting cell and the second conductive semiconductor layer of the second light emitting cell,
Further comprising an insulating layer between the conductive portion and the first light emitting cell or between the conductive portion and the second light emitting cell,
The insulating layer may include a first insulating layer and a second portion of the second light emitting cell formed from a portion of the side surface of the first conductive semiconductor layer of the first light emitting cell to an end of the side surface of the second conductive semiconductor layer of the first light emitting cell. A light emitting device comprising a second insulating layer formed from a portion of the side surface of the conductive semiconductor layer to the side edge of the first conductive semiconductor layer of the second light emitting cell. delete delete delete delete delete The method of claim 1,
The length of the first insulating layer is smaller than the length of the second insulating layer,
The thickness of the first insulating layer is greater than the thickness of the second insulating layer. delete delete The method of claim 1,
The adhesive layer is a light emitting device that is a tape or adhesive. delete delete The method of claim 1,
An upper surface of the first conductivity type semiconductor layer of the first light emitting cell has a first stepped portion, and at least a portion of the conductive portion is located on the first stepped portion,
The upper surface of the second conductivity type semiconductor layer of the second light emitting cell has a second stepped portion and at least a portion of the conductive portion is located on the second stepped portion. The method of claim 13,
The shape of the first stepped portion and the shape of the second stepped portion are different,
The shape of the first stepped portion and the shape of the second stepped portion is a light emitting device symmetrical. delete The method of claim 1,
The upper surface of the conductive portion is a flat light emitting device. The method of claim 1,
And a third light emitting cell disposed on the substrate and spaced apart from the first light emitting cell and the second light emitting cell and formed adjacent to the second light emitting cell.
The conductive portion electrically connects the third light emitting cell,
And a fourth insulating layer in contact with the second light emitting cell and a fourth insulating layer in contact with the third light emitting cell. delete delete Forming a first light emitting cell and a second light emitting cell spaced apart from the first light emitting cell on a first substrate;
Forming a conductive portion on the second substrate;
The conductive part is disposed between the first light emitting cell and the second light emitting cell so that an upper portion of the first substrate and an upper portion of the second substrate face each other to electrically connect the first light emitting cell and the second light emitting cell. Positioning; And
A method of manufacturing a light emitting device comprising removing the second substrate. The method of claim 20,
In the forming of the first light emitting cell and the second light emitting cell, the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer are sequentially stacked on the first substrate, and then etched to form the first light emitting cell. 1. A method of manufacturing a light emitting device in which a light emitting cell and the second light emitting cell are spaced apart from each other. The method of claim 20,
Forming a conductive layer on the second substrate, forming a pattern layer and a first adhesive layer on the second substrate, and bonding the conductive portion on the first adhesive layer. The method of claim 20,
Forming an insulating layer on a portion of the side surface of the conductive portion; And
And forming an insulating layer on a part of the side of the first light emitting cell or a part of the side of the second light emitting cell. delete The method of claim 20,
And forming a second adhesive layer on the conductive portion, before the upper portion of the first substrate and the upper portion of the second substrate are opposed to each other. The method of claim 20,
Before forming the upper portion of the first substrate and the upper portion of the second substrate to face each other, further comprising forming a second adhesive layer on the first substrate.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100690323B1 (en) 2006-03-08 2007-03-12 서울옵토디바이스주식회사 Light emitting diode for ac operation with wires and method of fabricating the same
KR100966372B1 (en) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 Monolithic light emitting diode array and method of manufacturing the same
KR101017395B1 (en) 2008-12-24 2011-02-28 서울옵토디바이스주식회사 Light emitting device having plurality of light emitting cells and method of fabricating the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101138945B1 (en) * 2005-01-29 2012-04-25 서울옵토디바이스주식회사 Light emitting device having a plurality of light emitting cells and package mounting the same
KR101171356B1 (en) * 2005-11-01 2012-08-09 서울옵토디바이스주식회사 Luminous element having arrayed cells and method of manufacturing the same
KR100876221B1 (en) * 2006-12-04 2008-12-31 주식회사 이츠웰 Light emitting diode module and manufacturing method
KR101115538B1 (en) * 2011-04-04 2012-02-28 서울옵토디바이스주식회사 Luminous device and the method therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100690323B1 (en) 2006-03-08 2007-03-12 서울옵토디바이스주식회사 Light emitting diode for ac operation with wires and method of fabricating the same
KR100966372B1 (en) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 Monolithic light emitting diode array and method of manufacturing the same
KR101017395B1 (en) 2008-12-24 2011-02-28 서울옵토디바이스주식회사 Light emitting device having plurality of light emitting cells and method of fabricating the same

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