KR102027793B1 - 처리액, 기판의 세정 방법 및 반도체 디바이스의 제조 방법 - Google Patents
처리액, 기판의 세정 방법 및 반도체 디바이스의 제조 방법 Download PDFInfo
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- KR102027793B1 KR102027793B1 KR1020187018802A KR20187018802A KR102027793B1 KR 102027793 B1 KR102027793 B1 KR 102027793B1 KR 1020187018802 A KR1020187018802 A KR 1020187018802A KR 20187018802 A KR20187018802 A KR 20187018802A KR 102027793 B1 KR102027793 B1 KR 102027793B1
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- South Korea
- Prior art keywords
- liquid
- compound
- substrate
- treatment liquid
- hydroxylamine
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- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 description 1
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- YIVSWULVVGTVFT-UHFFFAOYSA-L hydroxyazanium;oxalate Chemical compound O[NH3+].O[NH3+].[O-]C(=O)C([O-])=O YIVSWULVVGTVFT-UHFFFAOYSA-L 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
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- 229910052748 manganese Inorganic materials 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
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- 229920001281 polyalkylene Polymers 0.000 description 1
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- 229920000768 polyamine Polymers 0.000 description 1
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- 229920001721 polyimide Polymers 0.000 description 1
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- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
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- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 125000000547 substituted alkyl group Chemical group 0.000 description 1
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- 239000013589 supplement Substances 0.000 description 1
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- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- VHLDQAOFSQCOFS-UHFFFAOYSA-M tetrakis(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].OCC[N+](CCO)(CCO)CCO VHLDQAOFSQCOFS-UHFFFAOYSA-M 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- C11D11/0047—
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02079—Cleaning for reclaiming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
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JP2016000727 | 2016-01-05 | ||
JPJP-P-2016-000727 | 2016-01-05 | ||
PCT/JP2016/088670 WO2017119334A1 (ja) | 2016-01-05 | 2016-12-26 | 処理液、基板の洗浄方法および半導体デバイスの製造方法 |
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KR20180088452A KR20180088452A (ko) | 2018-08-03 |
KR102027793B1 true KR102027793B1 (ko) | 2019-10-02 |
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JP (1) | JP6542393B2 (ja) |
KR (1) | KR102027793B1 (ja) |
TW (1) | TWI702285B (ja) |
WO (1) | WO2017119334A1 (ja) |
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JP6542392B2 (ja) * | 2016-01-05 | 2019-07-10 | 富士フイルム株式会社 | 処理液、基板の洗浄方法、および、半導体デバイスの製造方法 |
JP6876570B2 (ja) * | 2017-07-28 | 2021-05-26 | 株式会社Screenホールディングス | 処理液除電方法、基板処理方法および基板処理システム |
JP7274982B2 (ja) * | 2019-08-23 | 2023-05-17 | 東京応化工業株式会社 | 充填剤、基板の処理方法、及び充填剤の製造方法 |
WO2021039137A1 (ja) | 2019-08-23 | 2021-03-04 | 富士フイルム株式会社 | 洗浄剤組成物 |
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JP2009212383A (ja) * | 2008-03-05 | 2009-09-17 | Sanyo Chem Ind Ltd | 洗浄剤組成物及び半導体基板の製造方法 |
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JP3738992B2 (ja) * | 2001-12-27 | 2006-01-25 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP4350364B2 (ja) * | 2002-12-12 | 2009-10-21 | 昭和電工株式会社 | 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法 |
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JP5736567B2 (ja) * | 2010-10-20 | 2015-06-17 | 国立研究開発法人産業技術総合研究所 | 半導体ウエハの洗浄方法 |
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- 2016-12-26 KR KR1020187018802A patent/KR102027793B1/ko active IP Right Grant
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JP2001261312A (ja) * | 2000-03-24 | 2001-09-26 | Nisshin Kako Kk | ヒドロキシルアミン水溶液およびその製造方法 |
JP2006269677A (ja) * | 2005-03-23 | 2006-10-05 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR100849913B1 (ko) * | 2005-10-13 | 2008-08-04 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 수성 세정 조성물 및 이를 이용하는 방법 |
KR101381494B1 (ko) * | 2007-02-23 | 2014-04-04 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 불소계 용매-함유 용액의 정제 방법 |
JP2009212383A (ja) * | 2008-03-05 | 2009-09-17 | Sanyo Chem Ind Ltd | 洗浄剤組成物及び半導体基板の製造方法 |
KR101254845B1 (ko) * | 2008-11-05 | 2013-04-15 | 도쿄엘렉트론가부시키가이샤 | 액처리 방법, 액처리 장치 및 기억매체 |
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TWI702285B (zh) | 2020-08-21 |
KR20180088452A (ko) | 2018-08-03 |
TW201736591A (zh) | 2017-10-16 |
JPWO2017119334A1 (ja) | 2018-10-25 |
JP6542393B2 (ja) | 2019-07-10 |
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