KR101997687B1 - Method for manufacturing encapsulated electronic device - Google Patents
Method for manufacturing encapsulated electronic device Download PDFInfo
- Publication number
- KR101997687B1 KR101997687B1 KR1020150151387A KR20150151387A KR101997687B1 KR 101997687 B1 KR101997687 B1 KR 101997687B1 KR 1020150151387 A KR1020150151387 A KR 1020150151387A KR 20150151387 A KR20150151387 A KR 20150151387A KR 101997687 B1 KR101997687 B1 KR 101997687B1
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- South Korea
- Prior art keywords
- terminal portion
- electrode terminal
- electronic device
- polymer layer
- layer
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 239000010410 layer Substances 0.000 claims description 91
- 229920000642 polymer Polymers 0.000 claims description 44
- 238000007789 sealing Methods 0.000 claims description 29
- 238000005538 encapsulation Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 229920001187 thermosetting polymer Polymers 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 229920005992 thermoplastic resin Polymers 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 239000012044 organic layer Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000012798 spherical particle Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H01L51/5237—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H01L51/56—
-
- H01L2251/56—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present disclosure relates to a method of manufacturing an encapsulated electronic device and an encapsulated electronic device fabricated using the same.
Description
The present disclosure relates to a method of manufacturing an encapsulated electronic device and an encapsulated electronic device fabricated using the same.
The encapsulant film may be used to protect devices or devices sensitive to external factors such as moisture or oxygen. Devices or devices that can be protected by an encapsulant film include, for example, organic electronic devices, secondary batteries such as solar cells or lithium secondary batteries, and the like. Particularly, organic electronic devices among the above devices or devices are vulnerable to external factors such as moisture or oxygen.
Organic electronic devices are devices that include functional organic materials. Examples of the organic electronic device or the organic electronic device included in the organic electronic device include a photovoltaic device, a rectifier, a transmitter, and an organic light emitting diode (OLED) have.
Organic electronic devices are generally vulnerable to external factors such as moisture. For example, an organic light-emitting device typically includes a layer of a functional organic material existing between a pair of electrodes comprising a metal or a metal oxide, The electrode is oxidized by moisture to increase the resistance value, or the organic material itself changes, resulting in problems such as loss of the light emitting function or lowering of the luminance.
A sealing structure in which an organic light emitting element formed on a substrate is covered with a glass can or a metal can equipped with a getter or a moisture absorber and fixed with an adhesive is used for protecting the organic light emitting element from external environment such as moisture. Also, a method of sealing an organic light emitting device using a sealing material film instead of the sealing structure as described above is also used.
However, when an electronic device is sealed using an encapsulating material, a region where an electrical contact with the outside is required may be sealed by an encapsulating material, which may increase the contact resistance.
The present invention provides a method of manufacturing an encapsulated electronic device capable of solving the above problems and an encapsulated electronic device manufactured using the method.
One embodiment of the present disclosure provides a method of manufacturing an electronic device, comprising: preparing an electronic device including an electrode terminal portion; Forming a polymer layer on at least the electrode terminal portion using a thermoplastic resin or a thermosetting resin; Forming an encapsulating layer on the electronic device using an encapsulating material; And applying heat and pressure to the electrode terminal portion to remove at least a part of the polymer layer and the sealing layer provided on the electrode terminal portion.
One embodiment of the present disclosure provides an encapsulated electronic device fabricated using the manufacturing method.
The manufacturing method according to one embodiment of the present invention is advantageous in that the sealing layer provided on the electrode terminal portion of the electronic device can be removed through a simple process and a cost.
The manufacturing method according to one embodiment of the present invention is advantageous in that the sealing layer provided on the electrode terminal portion can be easily removed in the process of bonding a flexible printed circuit board (FPCB) to the electrode terminal portion .
1 shows a stacked structure of electrode terminal regions of a general encapsulated electronic device.
FIG. 2 illustrates a stacked structure of an electrode terminal region of an encapsulated electronic device manufactured by a manufacturing method according to an embodiment of the present invention.
FIG. 3 illustrates a region of an electrode terminal of an encapsulated electronic device according to an embodiment of the present invention.
Figure 4 is an embodiment according to 1, illustrating the state of the electronic device to form a bag, and Al 2 O 3 to the polymer layer on the ITO electrode terminals.
5 shows an electronic device in a state where an anisotropic conductive film (ACF) and a flexible circuit board are attached on an ITO electrode terminal portion on which an encapsulation layer is formed according to Embodiment 1;
6 is a view showing an electronic device according to Example 1 in which anisotropic conductive film (ACF) and a flexible circuit board are attached to the ITO electrode terminal portion by applying heat and pressure.
Fig. 7 shows an encapsulated electronic device manufactured according to Comparative Example 1. Fig.
8 is a view showing the position of the conductive terminal part of the object of contact resistance measurement for measuring the contact resistance of the electrode terminal part.
9 is an enlarged view of an electrode terminal portion of an electronic device manufactured according to Example 1. Fig.
10 is an enlarged view of an electrode terminal portion of an electronic device manufactured according to Reference Example 1. FIG.
When a member is referred to herein as being "on " another member, it includes not only a member in contact with another member but also another member between the two members.
Whenever a component is referred to as "comprising ", it is to be understood that the component may include other components as well, without departing from the scope of the present invention.
The term "transparent" in this specification means that the light transmittance in the visible light region is 50% or more or 70% or more.
Hereinafter, the present invention will be described in more detail.
One embodiment of the present disclosure provides a method of manufacturing an electronic device, comprising: preparing an electronic device including an electrode terminal portion; Forming a polymer layer on at least the electrode terminal portion using a thermoplastic resin or a thermosetting resin; Forming an encapsulating layer on the electronic device using an encapsulating material; And applying heat and pressure to the electrode terminal portion to remove at least a part of the polymer layer and the sealing layer provided on the electrode terminal portion.
The manufacturing method according to one embodiment of the present invention is advantageous in that the sealing layer provided on the electrode terminal portion of the electronic device can be removed through a simple process and a cost.
In addition, the manufacturing method according to one embodiment of the present invention can easily remove the sealing layer provided on the electrode terminal portion in the process of bonding a flexible printed circuit board (FPCB) to the electrode terminal portion .
The encapsulated electronic device manufactured by the manufacturing method according to one embodiment of the present invention can greatly reduce the contact resistance of the electrode terminal portion. Specifically, the encapsulated electronic device manufactured by the manufacturing method according to one embodiment of the present invention has an advantage that the sealing layer formed on the electrode terminal portion is removed, and the contact resistance with the external terminal is low.
1 shows a stacked structure of electrode terminal regions of a general encapsulated electronic device. 1, an
FIG. 2 illustrates a stacked structure of an electrode terminal region of an encapsulated electronic device manufactured by a manufacturing method according to an embodiment of the present invention. 2, the
FIG. 3 illustrates a region of an electrode terminal of an encapsulated electronic device according to an embodiment of the present invention. 3 is an illumination panel of a lighting apparatus including an organic light emitting element, and the region partitioned into bright colors is an electrode terminal portion. That is, in FIG. 3, a polymer layer is formed on at least one area of a brightly marked electrode terminal part, and then a sealing layer is formed and heat and pressure are applied to selectively remove the polymer layer and the sealing layer on the electrode terminal part .
According to one embodiment of the present invention, the thermoplastic resin can be used without limitation as long as it is a polymer material having properties of being liquefied by heat. Specifically, according to one embodiment of the present disclosure, the thermosetting material may use a hot melt.
According to one embodiment of the present invention, the thermosetting resin can be used without limitation as long as it is a polymeric material capable of breaking when heat and pressure are applied.
According to an embodiment of the present invention, the step of forming the polymer layer may include forming a polymer layer by using a thermoplastic resin or a thermosetting resin on at least a part of the electrode terminal part.
The polymer layer is easily removed by heat and pressure, and when the polymer layer is removed, the upper sealing layer is also removed, so that the electrode terminal portion can be exposed to the outside.
According to an embodiment of the present invention, at least a portion of the polymer layer and the sealing layer may be removed by applying heat and pressure to the electrode terminal region so that the polymer layer and the sealing layer, To move to the adjacent area, or to remove it. Through the above process, the electrode terminal portion may be connected to the external terminal by a low contact resistance by removing the polymer layer and the sealing layer.
According to an embodiment of the present invention, the step of forming the polymer layer may include forming a polymer layer as a front layer on an externally exposed area of the electronic device using a thermoplastic resin or a thermosetting resin.
The "external exposure area" in this specification means an external surface where the electronic device is exposed to the external environment. In addition, when an electronic device is provided on a substrate, it may mean an outer surface other than a surface which is in contact with the substrate and is blocked from the external environment.
According to one embodiment of the present invention, the polymer layer is transparent, and thus may not be formed only on the electrode terminal portion, but may be formed as a front layer on the electronic device. In this way, when the polymer layer is formed as a full-thickness layer, the cost of material for forming the polymer layer can be increased, but a separate patterning process can be omitted.
According to an embodiment of the present invention, the step of removing the polymer layer and the sealing layer may be performed by applying a flexible printed circuit board (FPCB) on the electrode terminal portion by applying heat and pressure.
Specifically, according to one embodiment of the present invention, a process performed by attaching a flexible printed circuit board (FPCB) on the electrode terminal portion is accompanied by a process of applying heat and pressure. Therefore, according to one embodiment of the present invention, a process of attaching a flexible printed circuit board (FPCB) without adding a separate process for removing the polymer layer and the sealing layer formed on the electrode terminal portion The polymer layer and the encapsulation layer formed on the electrode terminal portion may be removed. Accordingly, the contact resistance between the electrode terminal portion and the flexible printed circuit board (FPCB) can be minimized.
The flexible printed circuit board (FPCB) refers to a flexible printed circuit board (BPCB), which has a bending characteristic, and is a circuit that draws a circuit on the board without using wires when connecting circuits between electronic parts . The flexible printed circuit board (FPCB) of the present invention can be applied without limitation as long as it is commonly used in the art.
According to an embodiment of the present invention, an anisotropic conductive film (ACF) may be provided between the electrode terminal portion and the flexible printed circuit board (FPCB).
The anisotropic conductive film (ACF) is a film in which conductive particles are dispersed, and means a film having electrical conductivity in the z-axis and insulating property in the xy plane direction. The anisotropic conductive film (ACF) of the present invention can be applied without limitation as long as it is commonly used in the art.
According to an embodiment of the present invention, the electrode terminal portion and the anisotropic conductive film (ACF) may be in direct contact with each other.
According to one embodiment of the present disclosure, the step of forming the encapsulation layer may be by using atomic layer deposition (ALD).
According to an embodiment of the present invention, the step of forming the encapsulation layer may include forming the encapsulation layer as a front layer on an exposed region of the electronic device provided with the polymer layer.
According to an embodiment of the present invention, the electrode terminal portion may be at least one of an anode terminal portion and a cathode terminal portion.
According to one embodiment of the present disclosure, the electronic device comprises an anode; Cathode; And one or more organic layers provided between the anode and the cathode.
One embodiment of the present disclosure provides an encapsulated electronic device fabricated using the manufacturing method.
According to an embodiment of the present invention, the organic electronic device may include an organic light emitting device, an organic solar cell, an organic transistor, and the like. Specifically, according to one embodiment of the present disclosure, the electronic device may include an organic light emitting device.
In addition, one embodiment of the present invention may provide a lighting apparatus including the organic light emitting device.
According to one embodiment of the present disclosure, the electronic device may be provided on a substrate. The substrate is not particularly limited, and materials known in the art can be used. According to one embodiment of the present invention, the transparent substrate may be a transparent substrate, for example, glass or polyethylene terephthalate (PET), polycarbonate (PC), or polyamide (PA).
Hereinafter, the present invention will be described in detail by way of examples with reference to the drawings. However, the embodiments according to the present disclosure can be modified in various other forms, and the scope of the present specification is not construed as being limited to the embodiments described below. Embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art.
[Example 1]
A polymer layer is formed on a terminal portion of an ITO electrode of an electronic device using ITO as an electrode using a hot melt material and then the polymer layer is formed using Al 2 O 3 by atomic layer deposition (ALD) Layer was formed to a thickness of 30 nm and the electronic device was sealed.
Figure 4 is an embodiment according to 1, illustrating the state of the electronic device to form a bag, and Al 2 O 3 to the polymer layer on the ITO electrode terminals.
Then, an anisotropic conductive film (ACF) and a flexible printed circuit board (FPCB) were provided on the terminal portion of the ITO electrode where the sealing layer was formed, and then attached using heat and pressure.
5 shows an electronic device in a state where an anisotropic conductive film (ACF) and a flexible circuit board are attached on an ITO electrode terminal portion on which an encapsulation layer is formed according to Embodiment 1;
Then, heat and pressure were applied to the electrode terminal region, and an anisotropic conductive film (ACF) and a flexible printed circuit board (FPCB) were attached to the ITO electrode terminal portion.
6 is a view showing an electronic device according to Example 1 in which anisotropic conductive film (ACF) and a flexible circuit board are attached to the ITO electrode terminal portion by applying heat and pressure.
9 is an enlarged view of an electrode terminal portion of an electronic device manufactured according to Example 1. Fig. In Fig. 9, the bright region is the electrode terminal portion, and the spherical particles are conductive particles dispersed in an anisotropic conductive film (ACF).
[Comparative Example 1]
An electronic device was manufactured in the same manner as in Example 1, except that a polymer layer was formed on the electrode terminal portion.
Fig. 7 shows an encapsulated electronic device manufactured according to Comparative Example 1. Fig.
[Referential Example 1]
An electronic device was manufactured in the same manner as in Example 1 except that a polymer layer and a sealing layer were formed to compare the contact resistance levels of the electrode terminal portions of Example 1.
10 is an enlarged view of an electrode terminal portion of an electronic device manufactured according to Reference Example 1. FIG. In Fig. 10, the bright region is the electrode terminal portion, and the spherical particles are conductive particles dispersed in an anisotropic conductive film (ACF).
The contact resistance of the electrode terminals of the electronic device manufactured according to Example 1, Comparative Example 1 and Reference Example 1 was measured and shown in Table 1 below.
8 is a view showing the position of the conductive terminal part of the object of contact resistance measurement for measuring the contact resistance of the electrode terminal part. Specifically, the electrode terminal portions of the electronic devices manufactured according to Example 1, Comparative Example 1, and Reference Example 1 were sampled by 9 pieces respectively, and the contact resistance was measured.
In Table 1, it can be seen that current flow of the electrode terminal portion is impossible due to the sealing layer in the electronic device manufactured according to Comparative Example 1. [ It can also be seen that the electronic device manufactured according to Example 1 is similar to the contact resistance of the electronic device manufactured according to Reference Example 1. [ This result means that the polymer layer and the sealing layer are removed through heat and pressure at the electrode terminal portion of the electronic device manufactured according to Example 1, and the contact resistance is lowered.
9 and 10, the shape of the conductive particles in the anisotropic conductive film (ACF) at the electrode terminal portion of the electronic device manufactured according to Example 1 did not show much difference from that of Reference Example 1 . This means that the performance of the anisotropic conductive film (ACF) is not degraded even if the polymer layer and the sealing layer on the electrode terminal portion are removed by applying heat and pressure.
101: electrode terminal portion
201: sealing layer
301: Anisotropic conductive film (ACF)
401: Flexible printed circuit board (FPCB)
501: polymer layer
Claims (12)
Forming a polymer layer on at least the electrode terminal portion using a thermoplastic resin or a thermosetting resin;
Forming an encapsulation layer on an electronic device having a polymer layer formed on the electrode terminal portion using atomic layer deposition (ALD); And
Applying heat and pressure to the electrode terminal portion to liquefy or break down at least a part of the polymer layer provided on the electrode terminal portion to remove the liquefied or destroyed polymer layer and the encapsulation layer on the liquefied or destroyed polymer layer, And exposing at least a portion of the terminal portion.
Wherein the step of forming the polymer layer comprises forming a polymer layer on at least a part of the electrode terminal portion by using a thermoplastic resin or a thermosetting resin.
Wherein the step of forming the polymer layer comprises forming a polymer layer as a front layer on an externally exposed area of the electronic device using a thermoplastic resin or a thermosetting resin.
Wherein the step of removing the polymer layer and the sealing layer is performed by applying heat and pressure to a flexible printed circuit board (FPCB) on the electrode terminal portion.
Further comprising the step of providing an anisotropic conductive film (ACF) between the electrode terminal portion and the flexible printed circuit board (FPCB).
Wherein the electrode terminal portion and the anisotropic conductive film (ACF) are in direct contact with each other.
Wherein the step of forming the encapsulation layer comprises forming the encapsulation layer as a front layer on an exposed area of the electronic device provided with the polymer layer.
Wherein the electronic device is provided on a substrate.
Wherein the electrode terminal portion is at least one of an anode terminal portion and a cathode terminal portion.
The electronic device includes an anode; Cathode; And one or more organic layers provided between the anode and the cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150151387A KR101997687B1 (en) | 2015-10-29 | 2015-10-29 | Method for manufacturing encapsulated electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150151387A KR101997687B1 (en) | 2015-10-29 | 2015-10-29 | Method for manufacturing encapsulated electronic device |
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| KR20170050178A KR20170050178A (en) | 2017-05-11 |
| KR101997687B1 true KR101997687B1 (en) | 2019-07-08 |
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| JP2012023301A (en) * | 2010-07-16 | 2012-02-02 | Sharp Corp | Rework method of back electrode-type solar cell module and back electrode-type solar cell module |
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| KR101191126B1 (en) | 2009-09-01 | 2012-10-15 | 주식회사 엘지화학 | Encapsulant sheet, preparation method thereof, and photovoltaic module comprising the same |
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| JP2012023301A (en) * | 2010-07-16 | 2012-02-02 | Sharp Corp | Rework method of back electrode-type solar cell module and back electrode-type solar cell module |
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