KR101994894B1 - Apparatus for depositing, Method for depositing and Apparatus for depositing passivation film - Google Patents

Apparatus for depositing, Method for depositing and Apparatus for depositing passivation film Download PDF

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KR101994894B1
KR101994894B1 KR1020150049591A KR20150049591A KR101994894B1 KR 101994894 B1 KR101994894 B1 KR 101994894B1 KR 1020150049591 A KR1020150049591 A KR 1020150049591A KR 20150049591 A KR20150049591 A KR 20150049591A KR 101994894 B1 KR101994894 B1 KR 101994894B1
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deposition
substrate
source
linear
atomic layer
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KR1020150049591A
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Korean (ko)
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KR20160120491A (en
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이재승
김성열
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에이피시스템 주식회사
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    • H01L51/0002—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L51/0012—

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Abstract

The present invention relates to a deposition apparatus, a deposition method, and a deposition film deposition apparatus, and more particularly, to a deposition apparatus, a deposition method, and a deposition film deposition apparatus for depositing a plurality of material layers in a single chamber.
A deposition apparatus according to an embodiment of the present invention includes a substrate support on which a substrate is supported, a substrate support disposed on the deposition surface of the substrate, and arranged in a first axis direction across the substrate, A deposition module portion including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source for depositing a second material layer; and a deposition module portion coupled to the substrate support and configured to be movable in a second axial direction intersecting the first axial direction And a driving unit for reciprocating the substrate support.

Description

[0001] The present invention relates to a deposition apparatus, a deposition method, and a deposition apparatus,

The present invention relates to a deposition apparatus, a deposition method, and a deposition film deposition apparatus, and more particularly, to a deposition apparatus, a deposition method, and a deposition film deposition apparatus for depositing a plurality of material layers in a single chamber.

Organic electronic devices such as organic light emitting diodes (OLEDs), organic solar cells, and organic thin film transistors (organic TFTs) are vulnerable to moisture and oxygen, and thus a sealing film forming process for protecting devices is required.

The sealing film is formed by laminating a barrier film for preventing moisture permeation and a buffer film for flexibility. In the past, in order to alternately laminate a multilayer structure film of a barrier film and a buffer film, it has been necessary to deposit a plurality of masks in a plurality of chambers. The process is cumbersome and the deposition equipment becomes large.

In addition, in the case of using a linear evaporation source as disclosed in Korean Patent No. 10-0467535 (2005.13.13) for the formation of a sealing film, since the deposition rate of the unit linear deposition source is low, When a plurality of linear evaporation sources are used, the length of the deposition chamber is increased because the substrate must completely escape from the plurality of linear evaporation sources in order to deposit a uniform film on the substrate, There is a problem in that the footprint of the display device becomes large.

Korean Patent Registration No. 10-0467535

The present invention is not only capable of depositing a plurality of material layers in a single chamber using a linear atomic layer deposition source and a linear plasma chemical vapor deposition source but also a deposition method of a linear atomic layer deposition source and a linear plasma chemical vapor deposition source, Provided are a deposition apparatus, a deposition method, and a deposition film deposition apparatus capable of reducing a length of a deposition chamber and a foot-print of equipment by adjusting a motion path.

According to an aspect of the present invention, there is provided a deposition apparatus including: a substrate support on which a substrate is supported; A plurality of linear atomic layer deposition sources positioned in correspondence with the deposition surface of the substrate and arranged side by side in a first axis direction across the substrate, the at least one linear atomic layer deposition source depositing a first material layer, A deposition module including a linear plasma chemical vapor deposition source; And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction.

Wherein the linear atomic layer deposition source comprises a first source material nozzle and a first reaction material nozzle arranged side by side in the first axis direction and wherein the deposition module part has a first source material nozzle The plurality of linear atomic layer deposition sources may be disposed.

The deposition module portion may include a plurality of the linear atomic layer deposition sources continuously arranged to form an atomic layer deposition submodule, and the atomic layer deposition submodules may be respectively positioned symmetrically on both sides of the linear plasma chemical vapor deposition source .

The length of the atomic layer deposition submodule in the second axial direction may be greater than or equal to the second axial length of the substrate.

Wherein the atomic layer deposition submodule is configured such that the linear atomic layer deposition source located at the edge of at least one of both edges in the second axial direction has a larger number of the first reactive material nozzles than the remaining linear atomic layer deposition source have.

Wherein the linear atomic layer deposition source located at the edge comprises one of the first source material nozzles and a plurality of the first reaction material nozzles located on both sides of the first source material nozzle, The evaporation source may consist of one of the first source material nozzles and one of the first reactant nozzles.

The driving unit may reciprocate the substrate support so that the entire area of the substrate passes through an interval corresponding to the linear plasma chemical vapor deposition source.

At least one of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source may be alternately arranged in the deposition module part.

The driving unit may reciprocate the substrate support such that a portion of the substrate opposite to the linear atomic layer deposition source passes through an interval corresponding to the adjacent linear plasma chemical vapor deposition source.

The driving unit may reciprocate the substrate support such that the substrate linearly moves within the second axial length of the deposition module unit.

The first material layer may be a barrier layer, the second material layer may be a buffer layer, and the laminated structure of the first material layer and the second material layer may be a protective film formed on the organic electronic device.

According to another embodiment of the present invention, a deposition method includes: supporting a substrate on a substrate support; A first deposition material or a second deposition material is deposited on the substrate by using a deposition module section including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source arranged side by side in a first axis direction across the substrate, Spraying each of the materials; And reciprocating the substrate support in a second axis direction intersecting with the first axis direction.

In the reciprocating step, the substrate support may be reciprocated such that the substrate linearly moves within the second axial length of the deposition module.

Wherein the deposition module part is arranged such that the plurality of linear atomic layer deposition sources are symmetrical about the linear plasma chemical vapor deposition source, and in the reciprocating step, the entire area of the substrate corresponds to the linear plasma chemical vapor deposition source The substrate support can be reciprocated to pass through the section.

Wherein at least one of the linear atomic layer deposition sources and the linear plasma chemical vapor deposition sources are alternately arranged in the deposition module part, and in the reciprocating step, a part of the substrate, which is opposite to the linear atomic layer deposition source, The substrate support can be reciprocated to pass through a section corresponding to the linear plasma chemical vapor deposition source.

The first deposition material and the second deposition material may be injected simultaneously at the respective injecting steps.

The first deposition material and the second deposition material may be sequentially injected in the respective injecting steps.

Wherein each of the depositing steps deposits a first material layer of the first deposition material on the substrate and deposits a second material layer of the second deposition material on the first material layer, The material and the second deposition material may be respectively sprayed.

The first material layer is a barrier layer, the second material layer is a buffer layer, and the first material layer and the second material layer may be laminated on the organic electronic device.

According to another aspect of the present invention, there is provided a protective film deposition apparatus including: a substrate support on which a substrate is supported; At least one linear plasma chemical vapor deposition (CVD) deposition source and a plurality of linear atomic layer deposition sources located in a first axis direction across the substrate and corresponding to the deposition surface of the substrate, A deposition module section including a circle; And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting with the first axis direction, wherein the linear atomic layer deposition source includes a barrier disposed in the first axis direction, Layer source material nozzles and barrier layer reactant nozzles disposed side by side on either side of the barrier layer source material nozzles.

The driving unit may reciprocate the substrate support such that the substrate linearly moves within the second axial length of the deposition module unit.

The deposition module may be arranged such that the linear plasma chemical vapor deposition source is disposed at the center and the plurality of linear atomic layer deposition sources are symmetrically disposed on both sides of the linear plasma chemical vapor deposition source.

The deposition module part may be arranged such that at least one of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source are alternately and regularly arranged.

A deposition apparatus according to an embodiment of the present invention can deposit a plurality of material layers in a single chamber simply using a linear atomic layer deposition source and a linear plasma chemical vapor deposition source. And a deposition module portion including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source can uniformly deposit a plurality of material layers on a substrate without completely deviating from the deposition module portion.

In addition, since the second material layer is deposited only on a predetermined region of the substrate by only one linear plasma chemical vapor deposition source, the moving distance of the substrate can be reduced, and the length of the deposition chamber and the foot- Can be reduced. Further, by controlling the arrangement structure of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source, the movement distance of the substrate can be more effectively reduced. On the other hand, when the first material layer is formed as a barrier layer, since the first atomic layer can be made thick by constituting a plurality of linear atomic layer deposition sources, the moisture permeation prevention efficiency can be enhanced.

In the deposition method according to another embodiment of the present invention, the first deposition material of the linear atomic layer deposition source and the second deposition material of the linear plasma chemical vapor deposition source are selectively sprayed to form a first deposition material One material layer is deposited and a second material layer made of the second deposition material is deposited on the first material layer, thereby making it possible to form a more effective sealing film.

1 is a perspective view illustrating a deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a linear atomic layer deposition source according to an embodiment of the present invention;
3 is a cross-sectional view of an atomic layer deposition submodule according to one embodiment of the present invention.
4 is a perspective view showing a modification of the deposition apparatus according to an embodiment of the present invention.
5 is a flow diagram illustrating a deposition method according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. In the description, the same components are denoted by the same reference numerals, and the drawings are partially exaggerated in size to accurately describe the embodiments of the present invention, and the same reference numerals denote the same elements in the drawings.

1 is a perspective view illustrating a deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a deposition apparatus according to an embodiment of the present invention includes a substrate support 100 on which a substrate 10 is supported; A plurality of linear atomic layer deposition sources 210 for depositing a first material layer, the linear atomic layer deposition sources 210 corresponding to deposition surfaces of the substrate 10 and arranged in parallel in a first axis direction across the substrate 10; A deposition module portion 200 comprising at least one linear plasma chemical vapor deposition source 220 for depositing a layer of material 2; And a driving unit 300 connected to the substrate support 100 to reciprocate the substrate support 100 in a second axis direction intersecting the first axis direction.

The substrate support 100 is supported by the substrate 10 and reciprocates by driving of the driving unit 300 to form a first deposition material forming a first material layer and a second deposition material forming a second material layer Thereby causing the second deposition material to be ejected.

The deposition module unit 200 sprays the first deposition material and the second deposition material on the substrate 10 and is positioned corresponding to the deposition surface of the substrate 10, So that the first deposition material and the second deposition material can be sprayed downward. In addition, the deposition module unit 200 may be turned upside down from the substrate 10 to spray the first deposition material and the second deposition material upward. The deposition module portion 200 includes a plurality of linear atomic layer deposition sources (ALD) 210 for depositing a first material layer and at least one linear plasma chemical vapor deposition source (PECVD) 220 for depositing a second material layer can do. The linear atomic layer deposition source 210 and the linear plasma chemical vapor deposition source 220 may be disposed side by side in the first axis direction 11 across the substrate 10. A plurality of linear atomic layer deposition sources 210, Or may be arranged separately by the linear plasma chemical vapor deposition source 220. In addition, A linear atomic layer deposition source (ALD) 210 can deposit the first material layer, which is dense and has excellent uniformity, by depositing the first material layer on an atomic layer basis, and can be deposited using a linear plasma chemical vapor deposition source (PECVD 220 ) Can realize a deposition rate of the second material layer having a relatively high characteristic while using plasma. The linear atomic layer deposition source 210 can be used in a larger number than the linear plasma chemical vapor deposition source 220. Since the linear plasma chemical vapor deposition source 220 can realize a relatively high deposition rate by using plasma, However, since the linear atomic layer deposition source 210 deposits the first material layer at the atomic layer level, the deposition rate is low. Therefore, a large number of atomic layers can be deposited to realize a high deposition rate. Can be used.

The driving unit 300 may be connected to the substrate support 100 to reciprocate the substrate support 100 in a second axial direction 12 intersecting the first axial direction 11, The first material layer and the second material layer may be alternately stacked on the entire region of the substrate 10 by the movement. The driving unit 300 includes a power source 310 for providing power, a power transmitting unit 321 for transmitting the power provided by the power source 310, and a connecting member 321 fixed to the substrate supporting table 100 and connected to the power transmitting unit 321, The present invention is not limited thereto, and it is sufficient if the substrate support 100 can be reciprocated in the second axial direction 12.

The linear atomic layer deposition source 210 may deposit the first material layer in an atomic layer deposition (ALD) manner in which elements necessary for thin film formation are alternately supplied to be adsorbed one atom layer on the substrate, and linear plasma chemical vapor deposition The source 220 can deposit the second material layer by a plasma chemical vapor deposition (PECVD) method in which a thin film is deposited by chemically activating the reactive material using plasma. In addition, the linear atomic layer deposition source 210 may deposit the first material layer by spraying the first deposition material, and the linear plasma chemical vapor deposition source 220 may spray the second deposition material, 2 material layer can be deposited. The second material layer may be the same as or different from the first material layer. If the first material layer (e.g., SiO x layer) and the second material layer (e.g., SiO x layer) are the same, the first material layer is deposited by atomic layer deposition to be dense, And the second material layer can be deposited at a high rate by depositing by a plasma chemical vapor deposition method and can be used as a buffer layer because the CH group can be easily doped. On the other hand, when the first material layer and the second material layer are different from each other, the first material layer may be a SiO x layer, and the second material layer may be an SiN x layer, a SiON layer, or the like.

The deposition module unit 200 may be a plurality of linear atomic layer deposition sources 210 arranged continuously to form an atomic layer deposition sub-module 215. If a plurality of linear atomic layer deposition sources 210 constitute the atomic layer deposition submodule 215, the deposition rate of the first material layer to be deposited in atomic layer units can be increased. Thus, the first material layer, which is thicker than the second material layer, may be deposited before the second material layer is deposited, thereby increasing the moisture permeation prevention efficiency of the first material layer in proportion to the thickness of the first material layer.

The atomic layer deposition submodule 215 may be positioned symmetrically on either side of the linear plasma chemical vapor deposition source 220, respectively. When a plurality of atomic layer deposition submodules 215 are positioned symmetrically on both sides of the linear plasma chemical vapor deposition source 220 on both sides of the linear plasma chemical vapor deposition source 220, Layer can be uniformly deposited and the substrate 10 can be uniformly deposited over the entire area of the substrate 10 through a section corresponding to the central linear plasma chemical vapor deposition source 220 .

The driving unit 300 may reciprocate the substrate support 100 so that the entire area of the substrate 10 passes through a section corresponding to the linear plasma CVD evaporation source 220. When the entire area of the substrate 10 is reciprocated while passing through the section corresponding to the linear plasma chemical vapor deposition source 220 by the reciprocating motion of the substrate support 100, The material layer can be uniformly deposited. The second layer of material can be uniformly deposited over the entire area of the substrate 10 and a small number of the linear plasma chemical vapor deposition sources 220 can be applied to the entire area of the substrate 10, A layer of material can be deposited.

And the atomic layer deposition submodule 215 may have a length in the second axial direction 12 that is greater than or equal to the length in the second axial direction 12 of the substrate 10. Conventionally, since the substrate must completely escape from the plurality of linear evaporation sources (i.e., the deposition module section) in order to uniformly deposit the material layer, the substrate length (for example, 1 m) and the length of the plurality of linear evaporation sources (For example, 3 m) of the deposition chamber, which is the sum of the thickness (for example, 1 m). However, if the length of the second axial direction 12 of the atomic layer deposition sub-module 215 is equal to the length of the second axial direction 12 of the substrate 10, the substrate 10 corresponds to the deposition module unit 200 The entire area of the substrate 10 can pass through the section corresponding to the linear plasma CVD evaporation source 220 without departing from the section of the substrate 10 in the second axial direction 12 (for example, (E.g., 2.1 m), which is twice the length of the deposition chamber (for example, 1 m) and the length of the linear plasma chemical vapor deposition source 220 (for example, 0.1 m) 1 material layer and a second material layer).

If the length of the second axial direction 12 of the atomic layer deposition submodule 215 is greater than the length of the second axial direction 12 of the substrate 10, The length of the deposition chamber becomes longer than the length of the deposition chamber in the case where the length of the deposition chamber is equal to the length of the second axis direction 12 of the substrate 10. However, before passing through the section corresponding to the linear plasma chemical vapor deposition source 220, The deposition rate of the first material layer can be increased and the thickness of the first material layer can be increased because the first material layer can be deposited by the linear atomic layer deposition source 210, 1 material layer can be uniformly deposited. In this case, since the entire area of the substrate 10 can pass through the section corresponding to the linear plasma CVD evaporation source 220 without deviating from the section corresponding to the deposition module section 200, The length of the deposition chamber can be reduced compared with the deposition apparatus. On the other hand, if the length of the deposition chamber is reduced, the foot-print of the deposition equipment can be reduced, the equipment manufacturing cost can be reduced, and the space of the clean room can be easily secured.

As such, the atomic layer deposition submodule 215 is configured such that the length of the second axial direction 12 is equal to the length of the second axial direction 12 of the substrate 10 or the length of the second axial direction 12 of the substrate 10 Can be longer.

The region of the substrate 10 adjacent to the linear plasma chemical vapor deposition source 220 may be formed such that the first material layer is deposited thin before the second material layer is deposited, The region of the substrate 10 is deposited thicker before the second material layer is deposited, and one linear atomic layer deposition source 210 is very thin (about a few angstroms) Even if a difference in thickness occurs in the first material layer due to the deposition of the first material layer, the error is very small, not more than several tens of angstroms, so there is no problem in preventing moisture permeation.

2 is a cross-sectional view illustrating a linear atomic layer deposition source according to an embodiment of the present invention.

Referring to FIG. 2, the linear atomic layer deposition source 210 may include a first source material nozzle 211 and a first reactant nozzle 212 disposed side by side in a first axis direction 11. The linear atomic layer deposition source 210 deposits the first material layer by spraying the first deposition material (i.e., the first source material and the first reactive material) The first reaction material is formed by the reaction. At this time, the first source material and the first reactive material sequentially reach the substrate 10 without a gas phase reaction, and react only on the substrate 10 to form the first material layer. On the other hand, a vacuum exhaust port can be arranged for each space between adjacent nozzles (for example, the first source material nozzle and the first reaction material nozzle), and the deposition by-product can be exhausted through the vacuum exhaust port.

A plurality of linear atomic layer deposition sources 210 may be disposed in the deposition module unit 200 such that the first reaction material nozzles 212 are located on both sides of the first source material nozzles 211. The first source material may include silicon (Si), and the first reactant material may include oxygen (O). Because the first reactant material such as oxygen is highly reactive, the first reactant material The first material layer may be deposited on the substrate 10 effectively by spraying the first source material such as silicon after the substrate 10 is first sprayed. In addition, when the first reactive material having good reactivity is sprayed after the first source material is sprayed, reaction with the first source material is well performed, and the second material layer is well deposited on the first material layer . To this end, a plurality of linear atomic layer deposition sources 210 may be disposed so that the first reaction material nozzles 212 are located on both sides of the first source material nozzles 211.

The first source material may be a chemical material (e.g., BDEAS) that easily adsorbs oxygen atoms without using a plasma. In this case, the first source material may not adsorb well on the substrate 10 without oxygen atoms on the substrate 10 during the initial deposition. On the other hand, if the oxygen that can be used as the first reacting material is supplied as an oxygen radical by using plasma, the material of the substrate 10 (for example, gold, platinum, etc.) other than the noble metal ). Therefore, when the first reactant material such as oxygen is first adsorbed on the surface of the substrate 10 and then the first source material is sprayed, the first reactant material layer formed by the first reactant material, The material can be adsorbed well. Accordingly, the first source material may be a chemical material that easily adsorbs oxygen atoms without using plasma.

The linear plasma chemical vapor deposition source 220 may include a second source material nozzle and a second reaction material nozzle arranged in parallel in the first axis direction 11. [ In the linear plasma chemical vapor deposition source 220, the second source material nozzle and the second reaction material nozzle may be freely disposed, and the second source material nozzle may be disposed on both sides of the second reaction material nozzle .

And the second source material and the second reactant may be injected from the same single nozzle, wherein the nozzle may be a single nozzle. In addition, the second source material nozzle or the second reaction material nozzle may be additionally disposed on both sides of one nozzle which simultaneously injects the second source material and the second reaction material.

FIG. 3 is a cross-sectional view of an atomic layer deposition submodule according to an embodiment of the present invention. FIG. 3 (a) is a plan view of the atomic layer deposition submodule And FIG. 3 (b) is a view in which a linear atomic layer deposition source having a larger number of first reactant nozzles is located at the other edge of the atomic layer deposition submodule.

3, the atomic layer deposition sub-module 215 includes a linear atomic layer deposition source 210a located at an edge of at least one of both edges of the second axial direction 12, The number of the first reactant nozzles 212 may be greater than the number of the first reactant nozzles 212. The atomic layer deposition submodule 215 is formed by sequentially depositing the linear atomic layer deposition source 210 so that a plurality of first reactions located on both sides of the first source material nozzle 211 and the first source material nozzle 211 When the linear atomic layer deposition source 210a composed of the material nozzle 212 is continuously disposed, the first reaction material nozzle 212 is connected to the first reaction material nozzle 212 of the adjacent linear atomic layer deposition source 210a The deposition becomes inefficient. The first reactive material nozzles 211 are reduced by one by one in the linear atomic layer deposition source 210b except for the linear atomic layer deposition source 210a located at both edges of the deposition module unit 200 or by the linear plasma chemical vapor deposition source The first reactant nozzles 211 may be reduced by one in the remaining linear atomic layer deposition source 210b except for the linear atomic layer deposition source 210a located on both sides of the first atomic layer deposition source 220. [ In this case, the first reaction material nozzle 212 can be positioned on both sides of the first source material nozzle 211, and deposition by the atomic layer deposition submodule 215 becomes efficient, and the first reaction material nozzle 211 The length of the deposition module unit 200 can be reduced and the length of the deposition chamber can be further reduced.

As shown in FIG. 3, the linear atomic layer deposition source 210a located at the edge includes a first source material nozzle 211 and a plurality of first reaction material nozzles 211 located on both sides of the first source material nozzle 211 And the remaining linear atomic layer deposition source 210b may be composed of one first source material nozzle 211 and one first reaction material nozzle 212. [ The first reaction material nozzles 212 are disposed on both sides of the first source material nozzles 211 in the deposition module unit 200 with a small number of the first source material nozzles 211 and the first reaction material nozzles 212, So that the length of the deposition chamber can be reduced. In addition, as the length of the deposition chamber is reduced, the footprint of the deposition equipment can be reduced, equipment manufacturing cost can be reduced, and space for the clean room can be easily secured.

On the other hand, the linear atomic layer deposition source 210a and the remaining linear atomic layer deposition source 210b located at the edge are formed on the surface facing the linear atomic layer deposition source 210a located at the edge, The first source material nozzle 211 of the first source material nozzle 211 may be positioned on both sides of the first source material nozzle 211 in the deposition module unit 200 In this case, the atomic layer deposition sub-module 215 on both sides of the linear plasma chemical vapor deposition source 220 is arranged at a position of the linear atomic layer deposition source 210a located at the edge and the remaining linear atomic layer deposition source 210b And the directions of the first source material nozzle 211 and the first reaction material nozzle 212 are symmetrical to each other.

4 is a perspective view illustrating a modification of the deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 4, in a modification of the deposition apparatus according to the present invention, the deposition module unit 200 may include at least one linear atomic layer deposition source 210 and a linear plasma chemical vapor deposition source 220 alternately arranged And they may be alternately arranged so as to have a constant ratio. In this case, it is preferable that the second material layer is deposited only by a single linear plasma chemical vapor deposition source 220 in a predetermined region of the substrate 10 (for example, a region corresponding to the deposition area of the linear plasma chemical vapor deposition source) The moving distance of the substrate 10 can be reduced, thereby reducing the length of the deposition chamber and reducing the footprint of the deposition equipment as the length of the deposition chamber is reduced. Therefore, it is possible to reduce the manufacturing cost of the equipment and to secure the space of the clean room.

In the modification of the deposition apparatus according to the present invention, the driving unit 300 may be configured such that a portion of the substrate 10 opposed to the linear atomic layer deposition source 210 passes through a region corresponding to the adjacent linear plasma CVD evaporation source 220 The substrate support 100 can be reciprocated. The first material layer is deposited by a linear atomic layer deposition source 210 on a portion of the substrate 10 opposite to the linear atomic layer deposition source 210 and the first material layer is deposited by the reciprocating motion of the substrate support 100, When the region in which the one material layer is deposited (or a part of the substrate) passes through a section corresponding to the adjacent linear plasma CVD vapor deposition source 220, the second material layer is deposited on the deposited first material layer . When the linear atomic layer deposition source 210 and the linear plasma chemical vapor deposition source 220 are regularly arranged, a part of the substrate 10 opposed to one linear atomic layer deposition source 210 is adjacent to the linear plasma A plurality of material layers composed of the first material layer and the second material layer may be uniformly deposited on the entire region of the substrate 10 when passing through a region corresponding to the chemical vapor deposition source 220. [ (For example, 1 m) in the second axial direction 12 of the substrate 10 and the length of one section of the linear atomic layer deposition source 210 and the linear plasma chemical vapor deposition source 220 , 0.2 m) can effectively deposit a plurality of layers of material even with the length of the deposition chamber (e.g., 1.2 m). A linear atomic layer deposition source 210 and a linear plasma chemical vapor deposition source 220 are extended in the second axial direction 12 to the length of the substrate 10 in the second axial direction 12, The length of the portion 200 in the second axial direction 12 can be the length of the deposition chamber.

The driving unit 300 may reciprocate the substrate support 100 so that the substrate 10 moves linearly in the second axial direction 12 of the deposition module unit 200. In this case, since the substrate 10 moves within the area of the deposition module unit 200, it is possible to eliminate the inefficient space that was previously provided to allow the substrate to completely escape the deposition module unit for the uniform deposition of the material layer, The length of the chamber can be reduced and the length of the deposition chamber can be reduced to reduce the footprint of the deposition equipment, thereby reducing the manufacturing cost of the equipment and securing the space of the clean room. The first material layer and the second material layer may be uniformly deposited on the entire region of the substrate 10 without leaving the deposition module unit 200 in both of the embodiment of the deposition apparatus and the modification of the deposition apparatus according to the present invention It can be applied to both an embodiment of the deposition apparatus and a modification of the deposition apparatus.

The first material layer may be a barrier layer, and the second material layer may be a buffer layer. The laminated structure composed of the first material layer and the second material layer may be a protective film (or sealing film) formed on the organic electronic device. The first material layer may be a SiO x layer, wherein the first source material may comprise silicon and the first reactant material may comprise oxygen. As the first source material, bis (diethylamino) silane (BDEAS) may be used. As the first reaction material, nitrous oxide (N 2 O), oxygen (O 2 ) , Nitrogen monoxide (NO), ozone (O 3 ), and the like can be used. If the first material layer is a barrier layer, a barrier layer having dense and excellent uniformity can be deposited by the linear atomic layer deposition source 210, and a plurality of linear atomic layer deposition sources 210 can be used to deposit the barrier layer So that the moisture permeation prevention efficiency can be increased. Further, when the first material layer is a SiO x layer, the moisture permeation prevention efficiency is excellent.

The second material layer may be a SiN x layer, wherein the second source material may comprise silicon and the second reactant material may comprise nitrogen (N 2 ). As the second source material, monosilane (SiH 4 ), BDEAS, hexamethyldisiloxane (HMDSO), hexamethyldisilazane (HMDS) or the like may be used. As the second reactant, Nitrogen (N 2 ), ammonia (NH 3 ), or the like can be used. When a CH group is added to the SiN x layer, the flexibility of the buffer layer can be controlled to ensure a foldable level of extreme flexibility. In order to add a CH group, BDEAS, HMDSO, HMDS, ethane (C 2 H 6 ) Can be used.

The second material layer may be the same SiO x layer as the first material layer. The second source material and the second reacting material may be the same as the first source material and the first reacting material. The second material layer may be formed using a plasma chemical vapor deposition source 220, (PECVD) method.

The thickness of the second material layer may be about 3 to 200 ANGSTROM when the substrate 10 is scanned once with respect to the single linear plasma CVD evaporation source 220. The thickness of the SiO2 layer x layer and the SiN x layer are formed of an ultra-thin multi-layered film having a thickness of about 1 angstrom and about 10 angstroms, it is possible to obtain an excellent moisture permeation prevention efficiency and a flexibility characteristic. Here, each thickness of the barrier layer and the buffer layer is a thickness when the substrate 10 is scanned once for single linear evaporation sources (i.e., a single linear atomic layer deposition source and a single linear plasma chemical vapor deposition source).

In this way, the deposition apparatus according to an embodiment of the present invention can easily form a plurality of material layers (that is, the first material layer 210 and the second material layer 220) in a single chamber using the linear atomic layer deposition source 210 and the linear plasma chemical vapor deposition source 220, And the second material layer). And the substrate 10 is completely removed from the deposition module unit 200 through the deposition module unit 200 including the plurality of linear atomic layer deposition sources 210 and the at least one linear plasma chemical vapor deposition source 220 A plurality of material layers can be uniformly deposited on the substrate 10. [ In addition, the second material layer is deposited only on a predetermined region of the substrate 10 by only one linear plasma CVD vapor deposition source 220, so that the moving distance of the substrate 10 can be reduced. The footprint of the deposition equipment can be reduced. Further, by controlling the arrangement structure of the linear atomic layer deposition source 210 and the linear plasma chemical vapor deposition source 220, the movement distance of the substrate 10 can be more effectively reduced. Meanwhile, when the first material layer is formed as a barrier layer, since the first material layer can be made thicker by forming the plurality of linear atomic layer deposition sources 210, it is possible to increase the moisture permeation prevention efficiency of the first material layer It is possible.

5 is a flowchart illustrating a deposition method according to another embodiment of the present invention.

Referring to FIG. 5, the deposition method according to another embodiment of the present invention will be described in more detail. However, the elements overlapping with those described above in connection with the deposition apparatus according to the embodiment of the present invention will be omitted.

According to another embodiment of the present invention, there is provided a deposition method comprising: (S100) supporting a substrate on a substrate support; A first deposition material or a second deposition material is deposited on the substrate by using a deposition module section including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source arranged side by side in a first axis direction across the substrate, A step S200 of injecting a substance, respectively; And reciprocating the substrate support in a second axis direction intersecting with the first axis direction (S300).

First, the substrate is supported on a substrate support (S100). A plurality of layers of material are deposited on the entire area of the substrate by moving the substrate support to move the substrate support. The method may further include aligning the substrate with the shadow mask after the substrate is supported by the substrate support. In order to deposit a plurality of material layers in a predetermined shape, deposition is performed using the shadow mask. If necessary, the substrate and the shadow mask may be aligned and adhered before spraying the first deposition material and the second deposition material .

Next, the first deposition material or the second deposition material is sprayed on the substrate using the deposition module (S200). The deposition module portion may include a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source arranged side by side in a first axis direction across the substrate. The linear atomic layer deposition source may deposit the first material layer having a high density and excellent uniformity by spraying the first deposition material and depositing the first material layer in atomic layer units, and the linear plasma chemical vapor deposition source May spray the second deposition material to deposit the second material layer at a relatively high deposition rate. Since the linear atomic vapor deposition source can be used in a larger number than the linear plasma chemical vapor deposition source, the linear plasma chemical vapor deposition source can realize a relatively high deposition rate by using plasma, However, since the linear atomic layer deposition source is deposited in atomic layer units, the deposition rate of the first material layer is low, and a large number can be used for realizing a high deposition rate. The first deposition material and the second deposition material may be injected simultaneously or selectively (or sequentially), respectively.

In the spraying step (S200), the first deposition material and the second deposition material may be simultaneously sprayed. When the first deposition material and the second deposition material are injected at the same time, the first deposition material and the second deposition material can be uniformly deposited on the substrate by a simple method of reciprocating the substrate. In addition, it may be easier to control the injection of the first deposition material and the second deposition material.

In the step S200, the first deposition material and the second deposition material may be sequentially sprayed. The first deposition material and the second deposition material may be sequentially injected according to needs and purposes. Depending on the arrangement structure of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source and the movement path of the substrate, The first deposition material and the second deposition material may be sequentially (or selectively) injected such that the first material layer or the second material layer is uniformly deposited. For example, when a plurality of the linear atomic layer deposition sources are respectively disposed on both sides of one linear plasma chemical vapor deposition source, a region of the substrate adjacent to the linear plasma chemical vapor deposition source is formed by depositing the second material layer The first material layer is deposited thin before the second material layer is deposited and the region of the substrate remote from the linear plasma chemical vapor deposition source is deposited thicker before the second material layer is deposited, And the second deposition material are sequentially sprayed, the first material layer can be uniformly deposited.

An example of uniformly depositing the first material layer or the second material layer will be described as follows. A plurality of linear atomic layer deposition sources are disposed on both sides of the linear plasma chemical vapor deposition source in the same manner as the area of the substrate and a plurality of linear atomic layer deposition sources are disposed on both sides of the substrate, The first material layer is uniformly deposited. Thereafter, the second material layer is uniformly deposited on the first material layer by moving the substrate to the other side and passing through a section corresponding to the linear plasma CVD evaporation source. When the substrate has completely passed through the linear plasma chemical vapor deposition source and reaches a region corresponding to a plurality of the linear atomic layer deposition sources on the other side, the substrate is stopped and a plurality of linear atomic layer deposition sources And uniformly deposits the first material layer on the correspondingly stopped substrate. If it is necessary to repeatedly laminate the first material layer and the second material layer thereafter, the substrate is allowed to pass through the section corresponding to the linear plasma chemical vapor deposition source again, Such a process can be repeated such as uniformly depositing a material layer to easily form a laminated structure. At this time, only the evaporation sources necessary for each deposition may be turned on or off. In this case, since the substrate is not separated from the deposition module part, the footprint of the deposition equipment can be reduced by reducing the length of the deposition chamber, and the first deposition material or the second deposition material can be efficiently sprayed .

On the other hand, since the linear atomic layer deposition source deposits the first material layer very thinly at the atomic layer unit (or about a few angstroms), the first deposition material or the second deposition material is simultaneously sprayed Although the thickness error of the first material layer is very small as several tens of angstroms or less to prevent the moisture permeation, the first material layer may be uniformly deposited to prevent moisture permeation more effectively. The first material layer may be deposited by spraying only the first deposition material at the initial stage of deposition to sufficiently deposit the first material layer in contact with the substrate, and then spraying the second deposition material.

In each of the injecting steps (S200), a first material layer made of the first deposition material is deposited on the substrate, and a second material layer made of the second deposition material is deposited on the first material layer The first deposition material and the second deposition material may be respectively injected. The first deposition material may be first deposited by spraying the first deposition material and the second deposition material at the same time. Alternatively, the first deposition material and the second deposition material may be selectively sprayed, Layer may be deposited first. Wherein when the first deposition material and the second deposition material are injected at the same time, the entire area of the substrate passes through a place where the first deposition material is injected and the second deposition material is injected, A first layer of material is first deposited and a second layer of material is deposited on the first layer of material. When the linear atomic layer deposition source and the linear plasma chemical vapor deposition source are alternately arranged in order, a partial region of the substrate is positioned in correspondence with the linear plasma chemical vapor deposition source in order to reduce the moving distance of the substrate If the first deposition material and the second deposition material are simultaneously sprayed, a portion of the substrate corresponding to the linear plasma chemical vapor deposition source may be deposited before the second material layer, The material and the second deposition material may be selectively sprayed to deposit the first material layer first.

Then, the substrate support is reciprocated in a second axis direction intersecting with the first axis direction (S300). When the substrate support is reciprocated, the substrate is reciprocated to deposit a plurality of material layers (i.e., a first material layer and a second material layer) on the entire area of the substrate.

In the reciprocating step (S300), the substrate support may be reciprocated such that the substrate linearly moves within the second axial length of the deposition module. In this case, since the substrate moves within the area of the deposition module, it is possible to eliminate the inefficient space that was previously provided to allow the substrate to completely escape the deposition module for uniform deposition of the material layer, thereby reducing the length of the deposition chamber And as the length of the deposition chamber is reduced, the footprint of the deposition equipment can be reduced, thereby reducing the manufacturing cost of equipment and facilitating space in the clean room.

Wherein the deposition module part is arranged such that the plurality of linear atomic layer deposition sources are symmetrical about the linear plasma chemical vapor deposition source, and in the reciprocating step, the entire area of the substrate corresponds to the linear plasma chemical vapor deposition source The substrate support can be reciprocated to pass through the section. When the plurality of linear atomic layer deposition sources are symmetrically arranged on both sides of the linear plasma chemical vapor deposition source, the first material layer thicker than both sides of the linear plasma chemical vapor deposition source can be uniformly deposited , The second material layer may be deposited uniformly over the entire area of the substrate through the section corresponding to the linear plasma chemical vapor deposition source at the center. The substrate may be moved within the area of the deposition module when the area of the plurality of linear atomic layer deposition sources located at one side of the linear plasma CVD evaporation source is made equal to or larger than the area of the substrate. When the plurality of linear atomic layer deposition sources are arranged to be symmetrical with respect to the linear plasma chemical vapor deposition source, the time of exposure to the plurality of linear atomic layer deposition sources is equal in the entire region of the substrate, And the thickness of the first material layer in the laminated structure of the second material layer is uniform in the entire area of the substrate. In addition, since the entire area of the substrate is exposed to the linear plasma CVD evaporation source, the second material layer deposited by the linear plasma CVD evaporation source can be uniformly deposited.

At least one of the linear atomic layer deposition sources and the linear plasma chemical vapor deposition sources are alternately arranged in the deposition module part, and in the reciprocating step, a part of the substrate facing the linear atomic layer deposition source The substrate support can be reciprocated to pass through a section corresponding to the adjacent linear plasma chemical vapor deposition source. In this case, when the second material layer is deposited only on a predetermined region of the substrate (for example, a region corresponding to the deposition area of the linear plasma CVD deposition source) with only one linear plasma CVD deposition source, The length of the deposition chamber can be reduced, and the footprint of the deposition equipment can be reduced as the length of the deposition chamber is reduced. Therefore, it is possible to reduce the manufacturing cost of the equipment and to secure the space of the clean room. The substrate can be moved within the area of the deposition module part by making the deposition module part larger than the area of the substrate by a set of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source, The length can be effectively reduced.

The first material layer may be a barrier layer, and the second material layer may be a buffer layer. And the first material layer and the second material layer may be laminated on the organic electronic device. The first material layer may be a SiO x layer, where the first source material may comprise silicon and the first reactant material may comprise oxygen. As the first source material, BDEAS or the like may be used. As the first reaction material, nitrous oxide, oxygen, nitrogen monoxide, ozone or the like may be used. If the first material layer is a barrier layer, the barrier layer having dense and excellent uniformity can be deposited by the linear atomic layer deposition source, and the thickness of the barrier layer can be increased by the plurality of linear atomic layer deposition sources, The efficiency can be increased. Further, when the first material layer is a SiO x layer, the moisture permeation prevention efficiency is excellent. If the first material layer is a barrier layer, when the first material layer is first deposited on the substrate, the moisture vapor barrier effect is excellent. In the initial stage of vapor deposition, only the first deposition material is sprayed first, When the second deposition material is sprayed after sufficiently depositing the material layer, the moisture permeation prevention efficiency can be further improved. At this time, after the first material layer is deposited first, the first deposition material and the second deposition material are simultaneously sprayed to form a laminated structure sequentially.

The second material layer may be a SiN x layer, wherein the second source material may comprise silicon and the second reactant material may comprise nitrogen. As the second source material, monosilane, BDEAS, HMDSO, HMDS, or the like can be used, and as the second reaction material, nitrogen, ammonia, or the like can be used. When a CH group is added to the SiN x layer, flexibility of the buffer layer can be controlled to ensure extreme flexibility at the foldable level. BDEAS, HMDSO, HMDS, and ethane can be used for CH group addition.

The second material layer may be the same SiO x layer as the first material layer. The second source material and the second reactant material may be the same as the first source material and the first reactant material, and the second material layer may be formed on the plasma chemical vapor deposition apparatus using the linear plasma chemical vapor deposition source PECVD) method.

The thickness of the second material layer may be in the range of about 3 to 200 ANGSTROM when the substrate is scanned once for a single linear plasma CVD evaporation source. x layer and the SiN x layer are formed of an ultra-thin multi-layered film having a thickness of about 1 angstrom and about 10 angstroms, it is possible to obtain an excellent moisture permeation prevention efficiency and a flexibility characteristic. Here, each thickness of the barrier layer and the buffer layer is a thickness when the substrate is scanned once for a single linear deposition source (i.e., a single linear atomic layer deposition source and a single linear plasma chemical vapor deposition source) . The injection time of the first deposition material or the second deposition material varies depending on the arrangement of the linear atomic layer deposition source or the linear plasma chemical vapor deposition source and the movement path of the substrate, In order to prevent moisture permeation, the first material layer and the second material layer may be divided into a barrier layer and a buffer layer, Even if the thickness of the first material layer or the second material layer differs for each region of the substrate, the laminated structure of the first material layer and the second material layer may be formed in a protective film for the organic electronic device ) Can be used.

As described above, in the deposition method according to another embodiment of the present invention, the first deposition material of the linear atomic layer deposition source and the second deposition material of the linear plasma chemical vapor deposition source are selectively sprayed, The first material layer made of the first deposition material is deposited and the second material layer made of the second deposition material is deposited on the first material layer, thereby making it possible to form a sealing film more effective in preventing moisture permeation.

Hereinafter, a protective film deposition apparatus according to another embodiment of the present invention will be described in more detail. However, the same elements as those described above in connection with the deposition apparatus and the deposition method according to the embodiments of the present invention will be omitted.

According to another aspect of the present invention, there is provided a protective film deposition apparatus including: a substrate support on which a substrate is supported; At least one linear plasma chemical vapor deposition (CVD) deposition source and a plurality of linear atomic layer deposition sources located in a first axis direction across the substrate and corresponding to the deposition surface of the substrate, A deposition module section including a circle; And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction.

The substrate support is supported by the substrate and reciprocates by driving of the driving unit to deposit the barrier layer and the buffer layer in the entire region of the substrate.

The deposition module part injects a barrier layer deposition material and a buffer layer deposition material onto the substrate, and is positioned corresponding to a deposition surface of the substrate. The deposition layer module is positioned above the substrate, . ≪ / RTI > In addition, the deposition module may be turned upside down on the substrate to spray the barrier layer deposition material and the buffer layer deposition material upward. The deposition module portion may include a plurality of linear atomic layer deposition sources (ALD) for depositing a barrier layer and at least one linear plasma chemical vapor deposition source (PECVD) for depositing a buffer layer. The linear atomic layer deposition source and the linear plasma chemical vapor deposition source may be arranged in parallel in the first axis direction across the substrate, the plurality of linear atomic layer deposition sources may be arranged continuously, Or may be separately arranged by a plasma chemical vapor deposition source. The linear atomic layer deposition source (ALD) can deposit the barrier layer, which is dense and has excellent uniformity, by depositing the barrier layer in atomic layer units, and the linear plasma chemical vapor deposition source (PECVD) A relatively high deposition rate of the buffer layer can be realized while having excellent characteristics. The linear atomic layer deposition source can be used in a larger number than the linear plasma chemical vapor deposition source. Since the linear plasma chemical vapor deposition source can realize a relatively high deposition rate using plasma, efficient deposition of the buffer layer can be achieved. However, since the deposition rate of the linear atomic layer deposition source is low because the barrier layer is deposited on an atomic layer basis, a large number can be used for realizing a high deposition rate.

The driving unit is connected to the substrate support and is capable of reciprocating the substrate support in a second axis direction intersecting the first axis direction, and the barrier layer and the barrier layer are formed in the entire area of the substrate by the reciprocating motion of the substrate support. The buffer layer can be alternately stacked. The driving unit may include a power source for providing power, a power transmitting unit for transmitting the power provided from the power source, and a connecting unit for being connected to the power transmitting unit by being fixed to the substrate support. The substrate support can be reciprocated in the second axis direction.

The linear atomic layer deposition source may include a barrier layer source material nozzle and a barrier layer reactant nozzle arranged side by side in the first axis direction. The linear atomic layer deposition source deposits the barrier layer deposition material by spraying the barrier layer deposition material (i.e., the barrier layer source material and the barrier layer reaction material), wherein the barrier layer is formed of the barrier layer source material and the barrier layer reactive material Is formed. At this time, the barrier layer source material and the barrier layer reactant sequentially reach the substrate without a vapor phase reaction, and react only on the substrate to form the barrier layer. On the other hand, a vacuum exhaust port may be disposed for every space between adjacent nozzles (for example, barrier layer source material nozzle and barrier layer reactant nozzle), and the barrier layer source material or the barrier layer reactive material The deposition by-products resulting from the deposition can be exhausted.

The barrier layer source material nozzles may be disposed long in the first axis direction, and the barrier layer reactant nozzles may be disposed on both sides of the barrier layer source material nozzle. The barrier layer source material may include silicon (Si), and the barrier layer reactant may include oxygen (O). Since the barrier layer reactant such as oxygen is highly reactive, the barrier layer reactant Is sprayed to the substrate and the barrier layer source material such as silicon is sprayed, the barrier layer can be effectively deposited on the substrate. In addition, when the barrier layer reaction material is sprayed with good reactivity even after spraying the barrier layer source material, the buffer layer reacts well with the barrier layer source material and the buffer layer can be deposited well on the barrier layer. For this purpose, the plurality of linear atomic layer deposition sources may be arranged such that the barrier layer reaction material nozzles are located on both sides of the barrier layer source material nozzles.

The barrier layer source material may be a chemical material (for example, BDEAS) that easily adsorbs oxygen atoms without using a plasma. In this case, the barrier layer source material may not adsorb well on the substrate if oxygen atoms are not present on the substrate during initial deposition. On the other hand, if the oxygen that can be used as the barrier layer reaction material is supplied as an oxygen radical using plasma, a substance other than the noble metal (for example, gold, platinum, etc.) Well adsorbed. Therefore, when the barrier layer reaction material such as oxygen is first adsorbed on the surface of the substrate and then the barrier layer source material is sprayed, the barrier layer source material such as silicon is well adsorbed on the reactive material layer formed by the barrier layer reaction material . Accordingly, a chemical material that easily adsorbs oxygen atoms can be used as the barrier layer source material without using plasma.

The driving unit may reciprocate the substrate support such that the substrate linearly moves within the second axial length of the deposition module unit. In this case, since the substrate moves within the area of the deposition module, it is possible to eliminate the inefficient space that was previously provided to allow the substrate to completely escape the deposition module for uniform deposition of the material layer, thereby reducing the length of the deposition chamber And as the length of the deposition chamber is reduced, the footprint of the deposition equipment can be reduced, thereby reducing the manufacturing cost of equipment and facilitating space in the clean room.

The deposition module may be arranged such that the linear plasma chemical vapor deposition source is disposed at the center and the plurality of linear atomic layer deposition sources are symmetrically disposed on both sides of the linear plasma chemical vapor deposition source. If the plurality of linear atomic layer deposition sources are continuously arranged, the deposition rate of the barrier layer to be deposited in atomic layer units can be increased. Therefore, the barrier layer can be deposited thicker before the buffer layer is deposited, thereby increasing the moisture permeation prevention efficiency of the barrier layer in proportion to the thickness of the barrier layer. When the plurality of linear atomic layer deposition sources are symmetrically divided on both sides of the linear plasma chemical vapor deposition source, the barrier layer thicker than both sides of the linear plasma chemical vapor deposition source is uniformly deposited And the buffer layer may be uniformly deposited in the entire region of the substrate through the region corresponding to the linear plasma chemical vapor deposition source at the central portion of the substrate.

The deposition module part may be arranged such that at least one of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source are alternately and regularly arranged. In this case, when the buffer layer is deposited only on a predetermined region of the substrate (for example, a region corresponding to the deposition area of the linear plasma CVD evaporation source) as the one linear plasma chemical vapor deposition source, Thereby reducing the length of the deposition chamber and reducing the footprint of the deposition equipment as the length of the deposition chamber is reduced. Therefore, it is possible to reduce the manufacturing cost of the equipment and to secure the space of the clean room.

As described above, the deposition apparatus according to an embodiment of the present invention can easily deposit a plurality of material layers (i.e., the first material layer and the second material layer) in a single chamber using a linear atomic layer deposition source and a linear plasma chemical vapor deposition source, Lt; / RTI > And a deposition module portion including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source can uniformly deposit a plurality of material layers on a substrate without completely deviating from the deposition module portion. In addition, since the second material layer is deposited only on a predetermined region of the substrate with only one linear plasma CVD vapor deposition source, the movement distance of the substrate can be reduced, and the length of the deposition chamber and the foot- . Further, by controlling the arrangement structure of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source, the movement distance of the substrate can be more effectively reduced. On the other hand, when the first material layer is formed as a barrier layer, since the first atomic layer can be made thick by constituting a plurality of linear atomic layer deposition sources, the moisture permeation prevention efficiency can be enhanced. In the deposition method according to another embodiment of the present invention, the first deposition material of the linear atomic layer deposition source and the second deposition material of the linear plasma chemical vapor deposition source are selectively sprayed to form a first deposition material One material layer is deposited and a second material layer made of the second deposition material is deposited on the first material layer, thereby making it possible to form a more effective sealing film.

As used in the above description, the term " on " means not only a direct contact but also a case of being opposed to the upper or lower surface, It is also possible to position them facing each other, and they are used to mean facing away from each other or coming into direct contact with the upper or lower surface.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limited to the embodiments set forth herein. Those skilled in the art will appreciate that various modifications and equivalent embodiments may be possible. Accordingly, the technical scope of the present invention should be defined by the following claims.

10: substrate 11: first axis direction
12: second axis direction 100: substrate support
200: Deposition module part 210: Linear atomic layer deposition source
211: first source material nozzle 212: first reaction material nozzle
215: atomic layer deposition submodule 220: linear plasma chemical vapor deposition source
300: driving unit 310: power source
321: Power transmission unit 322:

Claims (23)

A substrate support on which the substrate is supported;
A plurality of linear atomic layer deposition sources positioned in correspondence with the deposition surface of the substrate and arranged side by side in a first axis direction across the substrate, the at least one linear atomic layer deposition source depositing a first material layer, A deposition module including a linear plasma chemical vapor deposition source; And
And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source includes a first source material nozzle and a first reaction material nozzle arranged side by side in the first axis direction,
Wherein the plurality of linear atomic layer deposition sources are arranged such that the first reaction material nozzles are located on both sides of the first source material nozzle and the plurality of linear atomic layer deposition sources are continuously arranged to form atomic layer deposition Module,
Wherein the atomic layer deposition submodule is symmetrically located on both sides of the linear plasma chemical vapor deposition source.
delete delete The method according to claim 1,
Wherein the atomic layer deposition submodule has a length in the second axial direction greater than or equal to the second axial length of the substrate.
The method according to claim 1,
Wherein the atomic layer deposition submodule has a linear atomic layer deposition source located at an edge of at least one of both edges in the second axial direction of the first atomic layer deposition source, Device.
The method of claim 5,
Wherein the linear atomic layer deposition source located at the edge comprises one of the first source material nozzles and a plurality of the first reaction material nozzles located on both sides of the first source material nozzle,
Wherein the remaining linear atomic layer deposition source comprises one of the first source material nozzle and one of the first reaction material nozzles.
The method according to claim 1,
Wherein the driving unit reciprocates the substrate support so that the entire area of the substrate passes through a section corresponding to the linear plasma chemical vapor deposition source.
A substrate support on which the substrate is supported;
A plurality of linear atomic layer deposition sources positioned in correspondence with the deposition surface of the substrate and arranged side by side in a first axis direction across the substrate, the at least one linear atomic layer deposition source depositing a first material layer, A deposition module including a linear plasma chemical vapor deposition source; And
And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source includes a first source material nozzle and a first reaction material nozzle arranged side by side in the first axis direction,
Wherein the deposition module portion is configured such that the plurality of linear atomic layer deposition sources are disposed such that the first reaction material nozzle is located on both sides of the first source material nozzle and the at least one linear atomic layer deposition source and the linear plasma chemical vapor deposition Wherein a circle is alternately arranged.
The method of claim 8,
Wherein the driving unit reciprocates the substrate support so that a portion of the substrate opposite to the linear atomic layer deposition source passes through an interval corresponding to the adjacent linear plasma chemical vapor deposition source.
The method according to claim 1 or 8,
Wherein the driving unit reciprocates the substrate support such that the substrate linearly moves within the second axial length of the deposition module unit.
The method according to claim 1 or 8,
Wherein the first material layer is a barrier layer,
The second material layer is a buffer layer,
Wherein the laminated structure of the first material layer and the second material layer is a protective film formed on the organic electronic device.
Supporting a substrate on a substrate support;
A first deposition material or a second deposition material is deposited on the substrate by using a deposition module section including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source arranged side by side in a first axis direction across the substrate, Spraying each of the materials; And
And reciprocating the substrate support in a second axis direction intersecting with the first axis direction,
Wherein the deposition module part is arranged such that the plurality of linear atomic layer deposition sources are symmetrical with respect to the linear plasma chemical vapor deposition source,
Wherein the reciprocating motion reciprocates the substrate support so that the entire area of the substrate passes through a section corresponding to the linear plasma chemical vapor deposition source.
Supporting a substrate on a substrate support;
A first deposition material or a second deposition material is deposited on the substrate by using a deposition module section including a plurality of linear atomic layer deposition sources and at least one linear plasma chemical vapor deposition source arranged side by side in a first axis direction across the substrate, Spraying each of the materials; And
And reciprocating the substrate support in a second axis direction intersecting with the first axis direction,
Wherein at least one of the linear atomic layer deposition source and the linear plasma chemical vapor deposition source is alternately arranged in the deposition module section,
Wherein the reciprocating motion reciprocates the substrate support such that a portion of the substrate opposite to the linear atomic layer deposition source passes through an interval corresponding to the adjacent linear plasma chemical vapor deposition source.
The method according to claim 12 or 13,
Wherein the reciprocating motion reciprocates the substrate support such that the substrate linearly moves within the second axial length of the deposition module.
delete The method according to claim 12 or 13,
Wherein the first deposition material and the second deposition material are sprayed simultaneously at the respective spraying steps.
The method according to claim 12 or 13,
Wherein the first deposition material and the second deposition material are sequentially injected in the respective injecting steps.
The method according to claim 12 or 13,
Wherein each of the depositing steps deposits a first material layer of the first deposition material on the substrate and deposits a second material layer of the second deposition material on the first material layer, And the second deposition material is sprayed on the second deposition material, respectively.
19. The method of claim 18,
Wherein the first material layer is a barrier layer,
The second material layer is a buffer layer,
Wherein the first material layer and the second material layer are laminated on an organic electronic device.
A substrate support on which the substrate is supported;
At least one linear plasma chemical vapor deposition (CVD) deposition source and a plurality of linear atomic layer deposition sources located in a first axis direction across the substrate and corresponding to the deposition surface of the substrate, A deposition module section including a circle; And
And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source comprises a barrier layer source material nozzle arranged in the first axial direction and a barrier layer reactant nozzle arranged side by side on both sides of the barrier layer source material nozzle,
Wherein the deposition module portion is disposed at a central portion of the linear plasma chemical vapor deposition source and the plurality of linear atomic layer deposition sources are symmetrically disposed on both sides of the linear plasma chemical vapor deposition source.
A substrate support on which the substrate is supported;
At least one linear plasma chemical vapor deposition (CVD) deposition source and a plurality of linear atomic layer deposition sources located in a first axis direction across the substrate and corresponding to the deposition surface of the substrate, A deposition module section including a circle; And
And a driving unit connected to the substrate support and reciprocating the substrate support in a second axis direction intersecting the first axis direction,
Wherein the linear atomic layer deposition source comprises a barrier layer source material nozzle arranged in the first axial direction and a barrier layer reactant nozzle arranged side by side on both sides of the barrier layer source material nozzle,
Wherein the at least one linear atomic layer deposition source and the linear plasma chemical vapor deposition source are alternately arranged in the deposition module part.
The method according to claim 20 or 21,
Wherein the driving unit reciprocates the substrate support such that the substrate linearly moves within the second axial length of the deposition module unit. delete
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