KR101930788B1 - Cooling unit of substrate processing chamber - Google Patents

Cooling unit of substrate processing chamber Download PDF

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Publication number
KR101930788B1
KR101930788B1 KR1020160156406A KR20160156406A KR101930788B1 KR 101930788 B1 KR101930788 B1 KR 101930788B1 KR 1020160156406 A KR1020160156406 A KR 1020160156406A KR 20160156406 A KR20160156406 A KR 20160156406A KR 101930788 B1 KR101930788 B1 KR 101930788B1
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KR
South Korea
Prior art keywords
cooling
processing chamber
substrate processing
cooler
cylindrical shield
Prior art date
Application number
KR1020160156406A
Other languages
Korean (ko)
Other versions
KR20180057929A (en
Inventor
정용철
유태혁
박제민
이걸희
Original Assignee
주식회사 조인솔루션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 조인솔루션 filed Critical 주식회사 조인솔루션
Priority to KR1020160156406A priority Critical patent/KR101930788B1/en
Priority to CN201780063969.5A priority patent/CN109844925A/en
Priority to PCT/KR2017/007548 priority patent/WO2018097445A1/en
Publication of KR20180057929A publication Critical patent/KR20180057929A/en
Application granted granted Critical
Publication of KR101930788B1 publication Critical patent/KR101930788B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

The present invention relates to a cooler provided in a substrate processing chamber for cooling chamber walls and shields. A cooler in a substrate processing chamber according to an embodiment of the present invention is a cooler in a substrate processing chamber for cooling a cylindrical shield and a chamber side wall of a substrate processing chamber having a substrate support and a cylindrical shield therein, A cooler body disposed between the cylindrical shields and formed to fit with the cylindrical shield, and a cooling channel formed inside the cooler body, the cooling channel being formed so as to flow along the periphery of the cooler body, And the cooling passage is formed around the lower portion of the cylindrical shield to surround the substrate support, and the upper end portion of the cooling passage is arc-shaped in section.

Description

≪ Desc / Clms Page number 1 > COOLING UNIT OF SUBSTRATE PROCESSING CHAMBER &

The present invention relates to a cooler, and more particularly to a cooler provided in a substrate processing chamber to cool a chamber wall and a shield.

During processing to fabricate semiconductors and displays, the substrate is placed in a processing chamber and sets the processing conditions to deposit or etch the material on the substrate. A typical substrate processing chamber includes a chamber wall surrounding the processing zone, a gas supply for supplying gas into the chamber, a substrate support for supporting the substrate, and a gas evacuation portion for maintaining gas pressure in the chamber. Examples of such substrate processing chambers include a CVD (Chemical Vapor Deposition) chamber, a sputtering chamber, and an etching chamber.

A conventional sputtering chamber may have a process kit that reduces the build up of deposits in the interior chamber walls or areas outside the substrate. A process kit of such a process kit, such as a deposition ring, covering, or shadow ring, that is located around the substrate, prevents deposition of sputter deposits on the exposed back surface of the substrate or the side of the substrate support. And a shield protecting the sidewalls of the chamber prevents deposition of sputter deposits on the sidewalls of the chamber. That is, the process kit serves to reduce the accumulation of sputter deposits on the surfaces, if the sputter deposits accumulate, they eventually peel off and become contaminated in the chamber. Such a process kit is easily detachable and designed to remove deposited deposits.

However, when processing is performed at a high temperature, heat can be rapidly transferred to the chamber wall by a process kit such as a shield, thereby damaging components vulnerable to heat such as O-rings.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a cooler for a substrate processing chamber to prevent damage due to heat transmitted through a shield even when performing high temperature processing in the substrate processing chamber.

One embodiment of a cooler of a substrate processing chamber in accordance with the present invention for solving the above-mentioned problems comprises a cylindrical shield of a substrate processing chamber having a substrate support and a cylindrical shield therein and a substrate processing chamber for cooling the chamber side wall The cooler comprising: a cooler body disposed between the chamber side wall and the cylindrical shield, the cooler body being configured to fit with the cylindrical shield; And a cooling passage formed inside the cooler main body, the cooling passage being formed so that a cooling fluid flows along the periphery of the cooler main body, wherein the cooling passage is formed to be larger in height than the width, And the upper end portion of the cooling passage is arc-shaped in cross section.

In some embodiments of the cooler of the substrate processing chamber according to the present invention, the ratio of the height of the cooling channel to the width of the cooling channel may be 1: 2 to 1: 3.

According to the present invention, the cooling fluid flowing inside the cooler increases and the cooling fluid is moved closer to the heat source than the cooling flow path, so that the cooling effect of the side wall of the cylindrical shield and the substrate processing chamber is excellent. Thus, damage to the O-ring or internal parts of the substrate processing chamber is prevented, and the deposition accumulated on the cylindrical shield is reduced. Further, when the upper end portion of the cooling passage is formed in an arc shape, even if the pressure of the cooling fluid increases, the possibility that the pressure is dispersed and the cooler is broken is remarkably reduced.

Figure 1 is a schematic representation of a substrate processing chamber with a process kit and a cooler.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more faithful and complete, and will fully convey the scope of the invention to those skilled in the art.

In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to any particular shape of the regions illustrated herein, including, for example, variations in shape resulting from manufacturing. The same reference numerals denote the same elements at all times. Further, various elements and regions in the drawings are schematically drawn. Accordingly, the invention is not limited by the relative size or spacing depicted in the accompanying drawings.

An example of a substrate processing chamber with a process kit and a cooler is shown in Fig.

The substrate processing chamber 100 includes a chamber side wall 105 surrounding the processing zone 106 for processing the substrate 104. The substrate processing chamber 100 may be a sputtering chamber, as shown in FIG. 1, and such a sputtering chamber may be deposited by sputtering a material such as metal, metal nitride, metal oxide, etc. on the substrate 104.

The substrate processing chamber 100 includes a substrate support 110 for supporting a substrate 104. The substrate 104 is placed on the upper surface of the substrate support 110, and the substrate 104 can be fixed by an electrostatic chuck or the like. The substrate support 110 may include a heater that can increase the temperature during processing.

The substrate processing chamber 100 includes a sputtering target 120 facing the substrate support 110. The sputtering target 120 includes a material that is sputtered on the substrate 104. The sputtering target 120 is electrically insulated from the substrate processing chamber 100 by an insulating portion 123 made of an insulating material. The sputtering target 120 is supported by a backing plate 125. Once the plasma is generated in the substrate processing chamber 100, the resulting plasma sputteres the material of the sputtering target 120 and the sputtered material is deposited on the substrate 104.

The substrate processing chamber 100 includes a gas supply 130 for supplying gas into the substrate processing chamber 100. The gas supply part 130 supplies a processing gas for generating a plasma into the substrate processing chamber 100. The processing gas may be an inert gas such as argon (Ar), or may be a gas such as oxygen (O 2 ), ammonia (NH 3 ) for reactive sputtering. The spent processing gases and by-products are exhausted from the substrate processing chamber 100 by an exhaust pump 135.

The substrate processing chamber 100 includes a process kit 140. The process kit 140 is detachably installed from the substrate processing chamber 100 for cleaning deposits accumulated on the surface or for replacing or repairing corroded parts. The process kit 140 includes a ring assembly 143 mounted around the substrate support 110 and a cylindrical shield 145 mounted within the side walls 105 of the substrate processing chamber 100. The ring assembly 143 is used to prevent deposits from depositing on the backside of the exposed substrate 104 or the side of the substrate 104 or to prevent deposits from depositing on the sides of the substrate support 110, . ≪ / RTI > The cylindrical shield 145 serves to reduce the deposition of sputter deposits on the surface of the substrate support 110, the side walls 105 and bottom walls of the substrate processing chamber 100. To this end, the cylindrical shield 145 is formed to surround the substrate support 110 inside the side wall 105 of the substrate processing chamber 100, and the lower end of the cylindrical shield 145 may have a U-shaped cylindrical shape.

The substrate processing chamber 100 includes a cooler 150 that cools the cylindrical shield 145 and / or the side walls 105 of the substrate processing chamber 100. The cooler 150 includes a cooler body 153 and a cooling channel 155.

The cooler body 153 is disposed between the cylindrical shield 145 and the side wall 105 of the substrate processing chamber 100 and the cooler body 153 and the cylindrical shield 145 are configured to fit. That is, the cylindrical shield 145 is formed in close contact with the inner surface of the cooler body 153 so as to be close to the outer surface of the cooler body 153. The cylindrical shield 145 is detachably mounted to the cooler body 153 even if it is formed close to the cooler body 153. An insulating part 123 is formed on the upper part of the cooler body 153 so that the sputtering target 120 disposed on the insulating part 123 and the cooler body 153 are electrically insulated. An O-ring 124 is inserted between the insulating part 123 and the cooler body 153.

The cooling channel 155 is formed inside the cooler body 153. A cooling fluid flows inside the cooling channel 155 to cool the cylindrical shield 145 and the side walls 105 of the substrate processing chamber 100. The cooling channel 155 is formed in an annular shape so that the cooling fluid flows along the periphery of the cooler body 153.

The cylindrical shield 145 may be excessively heated by the plasma formed in the processing zone 106. In the case of a high temperature processing process, the temperature of the cylindrical shield 145 also increases due to the heater of the substrate support 100. Particularly, when the high-temperature processing process is performed at 600 ° C or more, the temperature of the cylindrical shield 145 becomes extremely high. When such a high-temperature processing process is performed, a part made of a material having a low melting point such as aluminum (Al) may be deformed. In addition, thermal expansion of the cylindrical shield 145 due to excessive heating may occur, and the substrate 104 may be contaminated with particles formed by sputtering deposition deposited thereon from the cylindrical shield 145. And the O-ring 124 inserted between the cooler 150 and the insulating portion 123 may be damaged by heat transmitted from the cylindrical shield 145.

The cooler 150 prevents the cylindrical shield 145 from being overheated and the coolant channel 155 is formed around the lower portion of the cylindrical shield 154 serving as a heat source in the high temperature processing process to surround the substrate support 110 do. In order to increase the cooling efficiency of the cooler 150, it is preferable to increase the volume of the cooling channel 155 to increase the amount of the cooling fluid to be flowed. For this purpose, the cooling passage 155 may be formed to have a height larger than the width. At this time, the ratio of the width to the height of the cooling channel 155 may be 1: 2 to 1: 3. If the ratio of the width to the height of the cooling channel 155 is less than 1: 2, the cooling effect can be reduced because the substrate support 110 can not be wrapped sufficiently. Further, it is practically difficult to process the ratio of the width to the height of the cooling channel 155 larger than 1: 3.

As described above, since the cooling flow path 155 forms an annular large flow path having a height greater than the width and is disposed closer to the heat source, more cooling fluid can flow inside the cylindrical shield 145, And the side walls 105 of the substrate processing chamber 100 are excellent.

The cross section of the upper end portion of the cooling passage 155 may be arc-shaped. If the upper end portion of the cooling channel 155 is corrugated, if the pressure of the cooling fluid is increased, the pressure at the corner portion increases sharply as compared with the other portions, so that the cooling fluid can be introduced into the substrate processing chamber 100. However, if the upper end of the cooling channel 155 is formed in an arc shape, even if the pressure of the cooling fluid increases, the possibility that the pressure is dispersed and the cooler 150 is damaged is significantly reduced.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limited to the particular embodiments set forth herein. It will be understood by those skilled in the art that various changes may be made and equivalents may be resorted to without departing from the scope of the appended claims.

100: substrate processing chamber
110:
120: sputtering target
123:
124: O-ring
130: gas supply unit
135: Exhaust pump
140: Process Kit
143: ring assembly
145: Cylindrical shield
150: cooler
153: cooler body
155:

Claims (2)

A cooler in a substrate processing chamber for cooling a cylindrical shield and a chamber sidewall of a substrate processing chamber performing a high temperature sputtering process of 600 ° C or higher with a substrate support and a cylindrical shield therein,
The cooler
A cooler body disposed between the chamber side wall and the cylindrical shield, the cooler body being formed to fit with the entire outer circumferential surface of the cylindrical shield; And
And a cooling passage formed inside the cooler body, the cooling passage being formed so that cooling fluid flows along the periphery of the cooler body,
The cooling channel is formed to have a height larger than the width,
Wherein an upper end portion of the cooling passage is arc-shaped in order to prevent the cooler body from being damaged by the pressure of the cooling fluid when the cooling fluid flows in the cooling passage,
Wherein the cooling passage is formed around the lower portion of the cylindrical shield to surround the substrate support,
Cooling the co-fired cylindrical shield as it heats the substrate to perform a high temperature sputtering process above 600 ° C to prevent deformation or damage of the members within the substrate processing chamber. The method according to claim 1,
Wherein the ratio of the width of the cooling channel to the height of the cooling channel is 1: 2 to 1: 3.
KR1020160156406A 2016-11-23 2016-11-23 Cooling unit of substrate processing chamber KR101930788B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020160156406A KR101930788B1 (en) 2016-11-23 2016-11-23 Cooling unit of substrate processing chamber
CN201780063969.5A CN109844925A (en) 2016-11-23 2017-07-14 The cooler of substrate processing chamber
PCT/KR2017/007548 WO2018097445A1 (en) 2016-11-23 2017-07-14 Cooler of substrate processing chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160156406A KR101930788B1 (en) 2016-11-23 2016-11-23 Cooling unit of substrate processing chamber

Publications (2)

Publication Number Publication Date
KR20180057929A KR20180057929A (en) 2018-05-31
KR101930788B1 true KR101930788B1 (en) 2018-12-24

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KR1020160156406A KR101930788B1 (en) 2016-11-23 2016-11-23 Cooling unit of substrate processing chamber

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KR (1) KR101930788B1 (en)
CN (1) CN109844925A (en)
WO (1) WO2018097445A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100882059B1 (en) 2006-07-14 2009-02-10 어플라이드 머티어리얼스, 인코포레이티드 Cooled anodes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980085020A (en) * 1997-05-27 1998-12-05 김영환 Chamber device and its cooling method
KR19990070951A (en) * 1998-02-26 1999-09-15 윤종용 Single Layer Chemical Vapor Deposition Equipment
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
KR100713334B1 (en) * 2006-05-15 2007-05-04 동부일렉트로닉스 주식회사 Device and method for controling temperature inetching apparatus
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
KR101375742B1 (en) * 2012-12-18 2014-03-19 주식회사 유진테크 Apparatus for processing substrate
KR101659414B1 (en) * 2014-03-11 2016-09-23 주식회사 삼원진공 sputter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100882059B1 (en) 2006-07-14 2009-02-10 어플라이드 머티어리얼스, 인코포레이티드 Cooled anodes

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WO2018097445A1 (en) 2018-05-31
KR20180057929A (en) 2018-05-31
CN109844925A (en) 2019-06-04

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