KR101907250B1 - Thin film transistor and manufacturing method thereof - Google Patents

Thin film transistor and manufacturing method thereof Download PDF

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KR101907250B1
KR101907250B1 KR1020160009090A KR20160009090A KR101907250B1 KR 101907250 B1 KR101907250 B1 KR 101907250B1 KR 1020160009090 A KR1020160009090 A KR 1020160009090A KR 20160009090 A KR20160009090 A KR 20160009090A KR 101907250 B1 KR101907250 B1 KR 101907250B1
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thin film
oxide semiconductor
semiconductor thin
type
film transistor
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KR20170089110A (en
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정재경
이기준
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한양대학교 산학협력단
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/0215—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing tantalum, e.g. TaSiOx
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02153—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing titanium, e.g. TiSiOx
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01033—Arsenic [As]

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  • Thin Film Transistor (AREA)

Abstract

A thin film transistor using a transparent P-type oxide semiconductor thin film as a channel layer and a manufacturing method thereof are disclosed. The disclosed thin film transistor includes a substrate; A gate insulating film; And a P-type oxide semiconductor thin film, wherein the P-type oxide semiconductor thin film is a thin film to which an impurity is added to a material selected from tantalum oxide, titanium oxide and hafnium oxide.

Description

[0001] THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF [0002]

The present invention relates to a thin film transistor and a method of manufacturing the same, and more particularly, to a thin film transistor using a thin P-type oxide semiconductor thin film as a channel layer and a method of manufacturing the same.

Recently, as a new application of thin film transistor (TFT), a technology for integrating thin film transistors on a transparent glass or plastic substrate into a logic circuit has been studied.

Conventional N-type transparent oxide thin film transistors are attracting great interest because they can have large charge mobility even in an amorphous state. For example, an oxide semiconductor having a band gap energy of about 3.0 eV or more exhibits a transparent characteristic. The N-type transparent oxide thin film transistor is formed of zinc oxide (ZnO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO) or the like is used as a channel layer.

In order to form a thin film transistor into a CMOS (Complementary Metal-Oxide Semiconductor) type, a P-type transparent oxide thin film transistor having a carrier as well as an N-type transparent oxide thin film transistor having a carrier is required. It is actively proceeding.

Related Korean Patent Publication Nos. 2010-0083322 and 2015-0017040.

The present invention provides a thin film transistor using a transparent P-type oxide semiconductor thin film as a channel layer and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a plasma display panel comprising: a substrate; A gate insulating film; And a P-type oxide semiconductor thin film, wherein the P-type oxide semiconductor thin film is a thin film in which impurity is added to a material selected from tantalum oxide, titanium oxide and hafnium oxide.

According to another aspect of the present invention, there is provided a plasma display panel comprising: a substrate; A gate insulating film; A P-type oxide semiconductor thin film; And an N-type oxide semiconductor thin film, wherein the P-type oxide semiconductor thin film is a thin film in which an impurity is added to a material selected from tantalum oxide, titanium oxide and hafnium oxide.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an oxide semiconductor thin film on a substrate; And implanting a P-type impurity into the oxide semiconductor thin film, wherein the oxide semiconductor thin film is selected from tantalum oxide, titanium oxide, and hafnium oxide.

According to the present invention, a transparent P-type thin film transistor can be provided by implanting a P-type impurity into a material selected from tantalum oxide, titanium oxide and hafnium oxide.

Also, according to the present invention, the transparency of the thin film transistor can be controlled by adjusting the concentration of the P-type impurity or the bandgap control material.

Also, according to the present invention, a transparent CMOS thin film transistor can be implemented together with a transparent N-type thin film transistor.

1 and 2 are views for explaining a thin film transistor according to an embodiment of the present invention.
FIG. 3 shows transfer characteristics when TaON is used as a P-type oxide semiconductor thin film and ITO is used as a source / drain electrode.
4 shows characteristics of a transistor in which ZnSnTaON is used as a P-type oxide semiconductor thin film and ITO is used as a source / drain electrode.
5 shows the transfer characteristics when TaON is used as the P-type oxide semiconductor thin film and Ni is used as the source / drain electrode.
6 is a view for explaining a method of manufacturing a thin film transistor according to an embodiment of the present invention.
Fig. 7 shows the transfer characteristics when the ratio of nitrogen and argon is changed in Fig. 5. Fig.
8 is a graph showing the transparency of the P-type oxide semiconductor thin film according to the ratio of nitrogen and argon.
9 is a diagram illustrating an inverter using a thin film transistor according to an embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The present invention provides a P-type transparent thin film transistor using a transparent P-type oxide semiconductor thin film. A transparent CMOS thin film transistor can be implemented together with an N-type transparent thin film transistor using the thin film transistor according to the present invention.

The P-type transparent oxide semiconductor thin film according to the present invention is a thin film to which an impurity is added to a material selected from tantalum oxide (TaO), titanium oxide (TiO), and hafnium oxide (HfO). Tantalum oxide, titanium oxide or hafnium oxide may exhibit P-type characteristics due to impurities, and Group 5 elements such as nitrogen, phosphorus, and arsenic may be used as impurities.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 and FIG. 2 illustrate a thin film transistor according to an embodiment of the present invention. FIG. 1 shows a bottom gate type thin film transistor, and FIG. 2 shows a top gate type thin film transistor.

Referring to FIG. 1, a thin film transistor 100 according to the present invention includes a substrate 110, a gate insulator 130, and a P-type oxide semiconductor thin film 140. And includes a gate electrode 120, a source electrode 150, and a drain electrode 160. The structure of a thin film transistor according to the present invention is the same as that of a known thin film transistor, but a P-type oxide semiconductor thin film 140 transparent to a channel layer is used.

The P-type oxide semiconductor thin film 140 according to the present invention is a thin film to which an impurity is added to a material selected from tantalum oxide, titanium oxide, and hafnium oxide. Tantalum, titanium and hafnium have a strong binding force with oxygen because of their large difference in oxygen and electronegativity, and thus the band of tantalum oxide, titanium oxide and hafnium oxide The gap can be large and it can exhibit transparent characteristics.

Tantalum oxide, titanium oxide, and hafnium oxide exhibit P-type characteristics by the addition of impurities, and a Group 5 element such as nitrogen, phosphorus, and arsenic can be used as an impurity. In particular, nitrogen has an ionic radius similar to that of oxygen and has the lowest p-orbital energy among Group 5 elements, so that it is suitable as an impurity for exhibiting P-type characteristics. (TaON), titanium nitride oxide (TiON), and hafnium nitride oxide (HfON) are implanted into the p-type oxide semiconductor thin film 140, respectively, when nitrogen is implanted as tantalum oxide, titanium oxide, .

On the other hand, the transparency of the P-type oxide semiconductor thin film 140 according to the present invention may be varied depending on the ratio of impurity to oxygen and the bandgap control material. As a band gap adjusting material, tin, zinc, indium or gallium may be used as an example. The tin, zinc, indium, and gallium are both more electronegative than tantalum, titanium, and hafnium, and thus the transparency of the P-type oxide semiconductor thin film 140 is increased when the proportion of the bandgap control material included therein is small, The transparency of the oxide semiconductor thin film 140 may be reduced when the ratio of the gap control material is large.

(1.31), Ca (1.00), Sr (0.95) and La (0.95) which are less electronegative than tantalum (1.5), titanium (1.54) and hafnium 1.1), Sc (1.36), Y (1.22), Ba (0.89), and the like can be used. In this case, the transparency of the P-type oxide semiconductor thin film 140 increases when the ratio of the bandgap control material is large and the transparency of the oxide semiconductor thin film 140 may decrease when the proportion of the bandgap control material included is small.

2, the thin film transistor 200 shown in FIG. 2 includes a substrate 210, a source electrode 220, a drain electrode 230 (not shown) A P-type oxide semiconductor thin film 240, a gate insulating film 250, and a gate electrode 260 according to the present invention.

3 to 5 are views showing transfer characteristics of a thin film transistor according to an embodiment of the present invention. 3 shows transfer characteristics when TaON is used as a P-type oxide semiconductor thin film and ITO is used as a source / drain electrode. 4 shows characteristics of a transistor in which ZnSnTaON is used as a P-type oxide semiconductor thin film and ITO is used as a source / drain electrode. 5 shows the transfer characteristics when TaON is used as the P-type oxide semiconductor thin film and Ni is used as the source / drain electrode.

As shown in FIGS. 3 to 5, when V GS is increased to a negative voltage, the TFT turns on and the I DS increases. As a result, it can be confirmed that the TFT operates as a P-type semiconductor.

6 is a view for explaining a method of manufacturing a thin film transistor according to an embodiment of the present invention. FIG. 7 shows the transfer characteristics when the ratio of nitrogen and argon is changed in FIG. 5, and FIG. 8 is a graph showing the transparency of the P-type oxide semiconductor thin film according to the ratio of nitrogen and argon.

As shown in Fig. 6, in step S610, an oxide semiconductor thin film is formed on the substrate, and in step S620, a p-type impurity is implanted into the oxide semiconductor thin film. The oxide semiconductor thin film is selected from tantalum oxide, titanium oxide, and hafnium oxide, and the oxide semiconductor thin film can exhibit P-type characteristics by implanting P-type impurities.

The P-type oxide semiconductor thin film may be formed by a thin film deposition process such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering. A process of forming a P-type oxide semiconductor thin film of a bottom gate type thin film transistor structure by sputtering will be described in more detail. A substrate on which a gate electrode and a gate insulating film are formed and a target material are prepared. The target material may be selected from tantalum oxide, titanium oxide, and hafnium oxide, and a target material containing a bandgap control material in tantalum oxide, titanium oxide, or hafnium oxide may be used.

A nitrogen-doped P-type oxide semiconductor thin film can be formed by injecting and accelerating argon gas and nitrogen gas into a chamber in which a substrate having a patterned shadow mask adhered thereto is prepared. At this time, the ratio of argon gas and nitrogen gas may be 3: 7, and the concentration of nitrogen may be variously adjusted according to the embodiment. The bandgap of the P-type oxide semiconductor thin film is controlled according to the concentration of nitrogen, the transparency of the P-type oxide semiconductor thin film can be controlled, and the transfer characteristics of the P-type oxide semiconductor thin film can be changed.

FIG. 7 (a) shows the ratio of nitrogen to argon gas of 6: 4, FIG. 7 (b) shows the ratio of nitrogen to argon gas of 7: 3, The transfer characteristics are shown. It can be confirmed that the transfer characteristics of the thin film transistor are the most excellent when the ratio of nitrogen to argon gas is 7: 3. Note in Figure 7 (b) is a view corresponding to Figure 5, Figure 7 is a black line in the case of V DS is -0.1V red line represents the transfer characteristic in the case where V DS is -5.1V.

8 is a graph showing the transmittance of the thin film transistor for each wavelength when tantalum nitride oxide (TaON) is used as the P-type oxide semiconductor thin film and the ratio of nitrogen to argon gas is 6: 4, 7: 3 and 8: transmittance. In all three cases, the transmittance is more than 65% at the wavelength of 400 ~ 700nm which is the visible ray region. The higher the ratio of nitrogen in the chamber, the lower the transparency. That is, the higher the concentration of the P-type impurity implanted into the P-type oxide semiconductor thin film, the lower the band gap energy and the lower the transparency of the P-type oxide semiconductor thin film.

Consequently, the transfer characteristics and the transparency of the thin film transistor are controlled in accordance with the concentration of the P-type impurity, and the concentration of the P-type impurity can be determined in accordance with the embodiment.

On the other hand, after the p-type oxide semiconductor thin film is formed, the substrate is subjected to heat treatment in a glove box of nitrogen atmosphere at 600 ° C or 400 ° C for 2 hours. Finally, a thin film transistor can be manufactured by forming a source / drain electrode of ITO or Ni by using a patterned shadow mask and performing a heat treatment at 200 degrees.

A P-type semiconductor oxide thin film may be formed by first forming a semiconductor oxide thin film by a thin film deposition process and doping the P-type impurity. As described above, the bandgap of the P-type oxide semiconductor thin film can be adjusted according to the doping concentration of the P-type impurity.

9 is a diagram illustrating an inverter using a thin film transistor according to an embodiment of the present invention.

9, the transparent P-type thin film transistor 910 according to the present invention may be used as a transparent CMOS thin film transistor together with the transparent N-type thin film transistor 920, and may be used as an inverter as an embodiment .

In other words, the thin film transistor according to another embodiment of the present invention is a CMOS thin film transistor including a substrate, a gate insulating film, a P-type oxide semiconductor thin film, and an N-type oxide semiconductor thin film, wherein the P-type oxide semiconductor thin film includes tantalum oxide, An oxide, and a hafnium oxide. The transparent N-type oxide semiconductor thin film may be selected from zinc oxide (ZnO), indium gallium oxide (IGO), indium gallium zinc oxide (IGZO).

As described above, the present invention has been described with reference to particular embodiments, such as specific elements, and specific embodiments and drawings. However, it should be understood that the present invention is not limited to the above- And various modifications and changes may be made thereto by those skilled in the art to which the present invention pertains. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

Claims (10)

Board;
A gate insulating film; And
A p-type oxide semiconductor thin film,
The P-type oxide semiconductor thin film
Thin film with nitrogen added to tantalum oxide
Thin film transistor.
delete The method according to claim 1,
The P-type oxide semiconductor thin film
Further comprising a band gap adjusting material for adjusting a band gap energy of the P-type oxide semiconductor thin film
Thin film transistor.
The method of claim 3,
The band gap adjusting material
Tin, zinc, indium and gallium
Thin film transistor.
Board;
A gate insulating film;
A P-type oxide semiconductor thin film; And
An N-type oxide semiconductor thin film,
The P-type oxide semiconductor thin film
Thin film with nitrogen added to tantalum oxide
Thin film transistor.
Forming an oxide semiconductor thin film on a substrate; And
And injecting nitrogen into the oxide semiconductor thin film to form a P-type oxide semiconductor thin film,
The P-type oxide semiconductor thin film
Thin film with nitrogen added to tantalum oxide
Lt; / RTI >
delete The method according to claim 6,
The P-type oxide semiconductor thin film
Further comprising a band gap adjusting material for adjusting a band gap energy of the P-type oxide semiconductor thin film
Lt; / RTI >
9. The method of claim 8,
The band gap adjusting material
Tin, zinc, indium and gallium
Lt; / RTI >
The method according to claim 6,
The band gap energy of the P-type oxide semiconductor thin film is
The concentration of nitrogen
Lt; / RTI >
KR1020160009090A 2016-01-26 2016-01-26 Thin film transistor and manufacturing method thereof KR101907250B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001322814A (en) 2000-05-12 2001-11-20 Kenkichiro Kobayashi P-type oxide semiconductor and its manufacturing method
US20120097922A1 (en) 2009-06-26 2012-04-26 Showa Denko K.K. Light emitting element, method of producing same, lamp, electronic equipment, and mechinical apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001322814A (en) 2000-05-12 2001-11-20 Kenkichiro Kobayashi P-type oxide semiconductor and its manufacturing method
US20120097922A1 (en) 2009-06-26 2012-04-26 Showa Denko K.K. Light emitting element, method of producing same, lamp, electronic equipment, and mechinical apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
김상철 외, P-type 투명산화물 반도체 개발 및 응용기술 연구, 한국전기연구원

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