KR101880176B1 - Elastic mold for direct imprinting and method for manufacturing wire construction - Google Patents

Elastic mold for direct imprinting and method for manufacturing wire construction Download PDF

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Publication number
KR101880176B1
KR101880176B1 KR1020150167934A KR20150167934A KR101880176B1 KR 101880176 B1 KR101880176 B1 KR 101880176B1 KR 1020150167934 A KR1020150167934 A KR 1020150167934A KR 20150167934 A KR20150167934 A KR 20150167934A KR 101880176 B1 KR101880176 B1 KR 101880176B1
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KR
South Korea
Prior art keywords
mold
functional
aspect ratio
elastic
wire structure
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KR1020150167934A
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Korean (ko)
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KR20170062296A (en
Inventor
성형진
박인규
오용석
최동윤
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한국과학기술원
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3807—Resin-bonded materials, e.g. inorganic particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

The present invention relates to an elastomeric mold for direct imprinting and a method of manufacturing a wire structure having a high aspect ratio using the elastomeric mold. The elastomeric mold for direct imprinting, It is possible to increase the productivity of the functional wire structures having a high aspect ratio and to reduce the manufacturing cost of the functional wire structures, thereby making it possible to utilize the functional wire structures in various industrial and academic research and development.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an elastic material mold for direct imprinting,

The present invention relates to an elastomeric mold for direct imprinting and a method of manufacturing a wire structure using the elastomeric mold. More particularly, the present invention relates to an elastomeric mold for direct imprinting capable of fabricating a wire structure of a functional material by using deformation and slip behavior of the elastomeric mold, ≪ / RTI >

As is well known, nanoimprinting lithography processes that can produce micro / nano scale structures can be classified into thermal curing methods and UV curing methods.

The thermosetting nanoimprinting lithography process is a process in which nanoscale stamps are brought into contact with a substrate coated with a polymer of high viscosity and simultaneously applying heat at a temperature higher than the transition temperature while filling the space between the stamp patterns After cooling to below the transition temperature, the stamp is removed from the substrate and the residual layer in the pattern is removed through dry etching to complete the process.

However, since the thermosetting nanoimprinting lithography process requires heat to be applied to the stamp and the substrate, and since a relatively high pressure is required, the nano-scale protruding portion of the hard stamp may be easily broken. .

Therefore, the problems of the thermosetting nanoimprinting lithography process have been improved through the UV curing imprint process, and most imprint processes are currently being performed through the UV curing process.

In the UV curing type nanoimprinting lithography process, a curing polymer having a low viscosity is introduced onto a substrate by coating or dripping method as compared with the above-mentioned thermosetting nanoimprinting process, and when the stamp is contacted, The pressure can be effectively filled between the stamp patterns even under pressure, and the polymer can be sensitized through a transparent stamp with a UV light source to form a firmly cured pattern.

As described above, the UV curing type nanoimprinting lithography process is performed at room temperature, has a short curing time, and is advantageous in the process of the laminated structure because the process is fast and the pattern alignment can be performed through the transparent substrate.

However, when a nanoimprinting process using a UV curing method is also used, nanoimprinting of a polymer material is required. In order to prevent breakage of a mold, a residual layer must be left. In order to pattern a functional material such as a metal, Expensive and complex aftertreatment processes such as the removal of water.

Therefore, a direct imprinting method of metal nanoparticles is being developed to solve various problems of canceling the advantages of the above-mentioned nanoimprinting lithography process.

In direct imprinting method, unlike rigid molds, it is possible to imprint the colloidal nanoparticles using an elastic mold and to minimize the residual layer and to fabricate a micro-nano-scale metal structure

On the other hand, the fabrication of micro / nano scale structures of functional materials is essential for biological sensors, microfluidics, and optoelectronic devices. In particular, it is important to increase the aspect ratio in order to improve the optical and electrical properties of functional structures.

Korean Patent Publication No. 10-2015-0068241 (published on June 19, 2015) Korean Registered Patent No. 10-1446313 (Registration date: September 24, 2014) Korean Registered Patent No. 10-1571317 (registered date Nov. 18, 2015) Korean Patent Publication No. 10-2008-0087425 (published on October 01, 2008)

SUMMARY OF THE INVENTION It is an object of the present invention to solve the problems described above and to provide a method of manufacturing a wire structure having a high aspect ratio than a pattern groove of an elastomeric mold through elastic deformation of an elastomeric mold for direct imprinting and slip motion between the elastomeric mold and a substrate, And a method of manufacturing a wire structure having a high aspect ratio using the same.

According to an aspect of the present invention, there is provided a method of manufacturing a wire structure using an elastomeric mold for direct imprinting, the method comprising: pressing the elastomeric mold on a substrate provided with a functional ink to elastically deform the elastomeric mold, Characterized in that a functional structure having an aspect ratio higher than the cross-sectional aspect ratio of the pattern groove formed to be engraved to form the wire structure is formed through slip motion generated by the liquid film formed by the functional ink between the mold and the substrate As shown below.

Here, the functional ink may include a slip inducing solvent for forming a liquid film on the substrate and inducing a slip phenomenon of the elastomeric mold, and the slip inducing solvent may be a-terpineol have.

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In addition, it is preferable that the aspect ratio of the elastic mold to the cross section of the pattern grooves is within a range of 1.5 to 2.

It is preferable that an interval between the pattern grooves of the elastic body mold is two times or more the width of the pattern groove.
In addition, the elastic material mold may be made of PDMS (polydimethylsiloxane) material, and the pattern grooves may be micro or nano scale.

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In the process of fabricating the wire structures of the various functional materials through the elastic deformation of the elastomeric mold for direct imprinting and the slip motion between the elastomeric mold and the substrate, the pattern grooves of the elastic mold for forming the wire structure The productivity of the functional wire structures having a higher aspect ratio can be increased and the manufacturing cost thereof can be reduced, which can be utilized in various industrial and academic research and development.

This patent is directed to fabricating wire structures with high aspect ratios of various functional materials using elastic motion of patterned micromolds in PDMS in a direct imprinting process and slip motions due to liquid film between the mold and the substrate. As the functional ink filled in the micro mold under pressure is evaporated, the side surface of the patterned cavity is deformed in the PDMS, and the slip phenomenon together with the ink on the bottom reduces the line width of the bottom surface of the cavity, thereby reducing the line width of the ink pattern filled in the cavity. Using these processes, it is possible to fabricate wire structures with high aspect ratios using various functional materials. This process can be used to fabricate high aspect ratio micro or nanowire structures using micro-molds or nanomolds.

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FIG. 1 is a perspective view illustrating an elastic mold for direct imprinting according to an embodiment of the present invention.
Fig. 2 is a side cross-sectional view of a direct imprinting elastic body mold cut along the line II-II in Fig. 1;
3 is a flowchart showing a manufacturing process of a wire structure having a high aspect ratio by using the elastic material mold for direct imprinting of FIG.
Fig. 4 is an enlarged partial cross-sectional view of a wire structure having a high aspect ratio using the elastic mold for direct imprinting of Fig. 3;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

FIG. 1 is a perspective view showing a mold for a direct imprinting according to an embodiment of the present invention, and FIG. 2 is a side cross-sectional view of a direct imprinting elastic material mold cut along the line II-II in FIG.

1 and 2, a direct imprinting elastic mold 10 (hereinafter referred to as "elastic body mold") of the present embodiment is formed by directly imprinting a functional wire structure 100 on one surface The pattern grooves 11 are formed to be engraved.

Here, the pattern grooves 11 are spaces filled with the functional ink 20 through the direct imprinting method to form the functional wire structure 100 with a cross-sectional aspect ratio higher than that of the pattern grooves of the elastomeric mold.

The elastic mold 10 described above is made of a PDMS material capable of being elastically deformed so as to shape the functional wire structure 100 with a higher cross-sectional aspect ratio than the pattern grooves 11 .

However, the present invention is not necessarily limited to this, but the present invention is not necessarily limited to this, and it is also possible to have a higher cross-sectional aspect ratio than the pattern grooves of the elastic body mold through deformation of the ceiling portion and both side wall portions forming the pattern grooves 11, It is of course possible to configure the wire structure 100 with a more various types of elastic materials.

On the other hand, the cross-sectional aspect ratio h / b of the pattern grooves 11 is preferably in the range of 1.5 to 1.5 to induce deformation of both side wall portions and a ceiling portion forming the pattern grooves 11 so as to form the functional wire structure 100, 2 < / RTI > range.

Here, when the cross-sectional aspect ratio h / b of the pattern grooves 11 is less than 1.5, the amount of deformation of the pattern grooves 11 with respect to both side wall portions becomes too small and the width of the functional wire structure 100, Will not be sufficiently accomplished

When the cross-sectional aspect ratio h / b of the pattern grooves 11 exceeds 2, the inside of the pattern grooves 11 is closed due to the excessive deformation of both side wall portions of the pattern grooves 11, The shape of the wire structure 100 itself becomes impossible.

It is preferable that the gap G between the pattern grooves 11 is at least twice as large as the width b of the pattern grooves 11.

Here, when the gap G between the pattern grooves 11 is less than twice the pattern groove width b, it is possible to induce the slip motion with respect to the side wall portion constituting the pattern groove 11 It is not possible to provide a sufficient distance (space) with the pattern groove 11, and also the internal shape of the pattern groove 11 for shaping the functional wire structure 100 can not be maintained by buckling do.

3 is a flowchart showing a manufacturing process of a wire structure having a high aspect ratio by using the elastic material mold for direct imprinting of FIG.

3, the use of the above-described elastomeric mold 10 to manufacture a functional wire structure 100 having a cross-sectional aspect ratio that is higher than that of the pattern grooves 11 of the elastomeric mold 10, that is, a cross-sectional aspect ratio of at least 1.5 or more The process includes an ink providing step ST10, an imprinting step ST20, a mold stripping step ST30, and a sintering step ST.
The cross sectional aspect ratio of the wire structure 100 may be expressed as a ratio of the maximum bottom width of the wire structure to the vertical height of the wire structure 100 formed by the elastic mold 10 on the transparent glass substrate 50. 4)

3 (a), a predetermined amount of the functional ink 20 required for forming the functional wire structure 100 is applied onto the transparent glass substrate 50 in the ink supply step ST10 .

In the imprinting step ST20, as shown in FIG. 3 (b), the above-described elastic body mold 10 is placed on the transparent glass substrate 50 with the functional ink 20 being provided, And a slip motion of the elastic body mold 10 induced by the liquid film formed by the functional ink 20 with the substrate 50 together with the elastic deformation of the elastic body mold 10 causes the cross sectional aspect ratio Thereby allowing the high functionality wire structure 100 to be shaped.

That is, when the elastic body mold 10 is pressed and deformed by the pressing force, the ceiling portion and both side wall portions of the pattern grooves 11 into which the functional ink 20 flows are collapsed and protruded toward the inside of the pattern grooves 11 And the bottom line width of the pattern groove 11 is reduced through the slip motion in which the both side portions are slid and moved along the surface of the substrate on which the bottom liquid film is formed during the deformation process. Consequently, the functional wire structure 100, So as to increase the cross-sectional aspect ratio.

Meanwhile, the functional wire structure 100 completed through the above-described process has a ceiling portion constituting the pattern groove 11 of the elastic body mold 10 for realizing the same, And both side wall surfaces are concavely grooved.

The functional ink 20 may be prepared by diluting the functional materials constituting the functional wire structure 100 to have predetermined concentrations by using a solvent and by using the elastic mold 10 described above, 100) having a suitable viscosity and surface tension.

Particularly, the functional ink 20 preferably includes a slip inducing solvent for forming a liquid film on the substrate 50 and inducing slip motion of the elastic body mold 10.

In this embodiment, the use of alpha-terpineol as the slip inducing solvent is exemplified.

However, the present invention is not limited to this. The slip inducing solvent may be any type of solvent capable of forming a liquid film on the substrate 50 so as to realize the slip motion according to the elastic deformation of the elastic body mold 10, It is natural that all of them can be applied.

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 3 (c), after the imprinting step ST20, the solvent of the functional ink 20 is evaporated and then cooled at room temperature to form a functional wire structure (FIG. 3 100) is formed, and the elastic body mold 10 is separated from the transparent glass substrate 50.

Then, in the sintering step ST40, the functional wire structure 100 formed on the transparent glass substrate 50 is heated to the sintering temperature to complete it, as shown in Fig. 3 (d).

Fig. 4 is an enlarged partial cross-sectional view of a wire structure having a high aspect ratio using the elastic mold for direct imprinting of Fig. 3;

As shown in FIG. 4, the functional metal wire structure 100 manufactured by using the elastic body mold 10 described above has elastic deformation of the elastic body mold and slip motion induced between the elastic body mold and the substrate during the deformation process, So that a high aspect ratio of 1.5 or more can be realized.

Accordingly, the aspect ratio of the functional wire structure made of the above-described functional materials can be increased, thereby improving the optical or electrical functional characteristics.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. And it goes without saying that they belong to the scope of the present invention.

10: Elastic mold 11: Pattern groove
20: functional ink 50: transparent glass substrate
100: Functional wire structure

Claims (7)

A method of manufacturing a wire structure using an elastomeric mold for direct imprinting,

The elastic structure of the elastic body mold and the slip motion generated by the liquid film formed by the functional ink between the elastic body mold and the substrate form the wire structure by pressing the elastic body mold on the substrate provided with the functional ink, Wherein the functional structure is shaped to have a higher aspect ratio than the cross-sectional aspect ratio of the pattern grooves formed to be engraved so as to be engraved.
The method according to claim 1,
Wherein the functional ink comprises a slip inducing solvent for forming a liquid film on the substrate and inducing a slip phenomenon of the elastomeric mold,

The slip-
A-terpineol, wherein the elastomeric material is an alpha-terpineol.
delete The method according to claim 1,
Wherein the elastic material mold comprises:
And an aspect ratio of the pattern grooves to an end face is within a range of 1.5 to 2. The method of manufacturing a wire structure using an elastic body mold for direct imprinting according to claim 1,
5. The method of claim 4,
Wherein an interval between the pattern grooves of the elastic body mold is at least twice the width of the pattern groove.
The method according to claim 1,
Wherein the elastic material mold is made of PDMS (polydimethylsiloxane) material.
The method according to claim 1,
Wherein the pattern grooves are made of a micro or nano scale and are made of an elastomeric material for direct imprinting.
KR1020150167934A 2015-11-27 2015-11-27 Elastic mold for direct imprinting and method for manufacturing wire construction KR101880176B1 (en)

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KR101880176B1 true KR101880176B1 (en) 2018-07-20

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050087011A (en) * 2004-02-24 2005-08-31 한국기계연구원 Microcontact printing methods using imprinted nanostructure and nanostructure thereof
KR20070026944A (en) * 2005-08-29 2007-03-09 재단법인서울대학교산학협력재단 Method for forming high aspect ratio nanostructure and method for forming nano pattern using the same
KR20080087425A (en) * 2007-03-27 2008-10-01 삼성전기주식회사 Impriting stamp for forming pattern and method of fabricating led package using the same
KR20140026814A (en) * 2012-08-23 2014-03-06 고려대학교 산학협력단 Method of manufacturing a nano pattern structure and apparatus for manufacturing a nano pattern structure
KR101446313B1 (en) * 2013-12-06 2014-10-07 주식회사 시노펙스 Touch window
US20150024308A1 (en) * 2008-11-04 2015-01-22 Nanjing University Flexible nanoimprint mold, method for fabricating the same, and mold usage on planar and curved substrate
KR20150068241A (en) * 2013-12-11 2015-06-19 주식회사 시노펙스 Touch Window which is made by NIP process
KR101571317B1 (en) * 2012-04-25 2015-11-24 그래핀스퀘어 주식회사 Patterning method of graphene using hot embossing imprinting

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050087011A (en) * 2004-02-24 2005-08-31 한국기계연구원 Microcontact printing methods using imprinted nanostructure and nanostructure thereof
KR20070026944A (en) * 2005-08-29 2007-03-09 재단법인서울대학교산학협력재단 Method for forming high aspect ratio nanostructure and method for forming nano pattern using the same
KR20080087425A (en) * 2007-03-27 2008-10-01 삼성전기주식회사 Impriting stamp for forming pattern and method of fabricating led package using the same
US20150024308A1 (en) * 2008-11-04 2015-01-22 Nanjing University Flexible nanoimprint mold, method for fabricating the same, and mold usage on planar and curved substrate
KR101571317B1 (en) * 2012-04-25 2015-11-24 그래핀스퀘어 주식회사 Patterning method of graphene using hot embossing imprinting
KR20140026814A (en) * 2012-08-23 2014-03-06 고려대학교 산학협력단 Method of manufacturing a nano pattern structure and apparatus for manufacturing a nano pattern structure
KR101446313B1 (en) * 2013-12-06 2014-10-07 주식회사 시노펙스 Touch window
KR20150068241A (en) * 2013-12-11 2015-06-19 주식회사 시노펙스 Touch Window which is made by NIP process

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