KR101829907B1 - Bonding Wire Including Rod Coated With Carbon Allotrope - Google Patents

Bonding Wire Including Rod Coated With Carbon Allotrope Download PDF

Info

Publication number
KR101829907B1
KR101829907B1 KR1020110089078A KR20110089078A KR101829907B1 KR 101829907 B1 KR101829907 B1 KR 101829907B1 KR 1020110089078 A KR1020110089078 A KR 1020110089078A KR 20110089078 A KR20110089078 A KR 20110089078A KR 101829907 B1 KR101829907 B1 KR 101829907B1
Authority
KR
South Korea
Prior art keywords
wire
coating layer
carbon
copper
bonding wire
Prior art date
Application number
KR1020110089078A
Other languages
Korean (ko)
Other versions
KR20130025646A (en
Inventor
김정익
차흥주
곽일조
Original Assignee
엘에스전선 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘에스전선 주식회사 filed Critical 엘에스전선 주식회사
Priority to KR1020110089078A priority Critical patent/KR101829907B1/en
Priority to PCT/KR2012/006721 priority patent/WO2013032175A2/en
Publication of KR20130025646A publication Critical patent/KR20130025646A/en
Application granted granted Critical
Publication of KR101829907B1 publication Critical patent/KR101829907B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/4382—Applying permanent coating, e.g. in-situ coating
    • H01L2224/43827—Chemical vapour deposition [CVD], e.g. laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/45693—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/456 - H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Abstract

본 발명의 본딩 와이어는 i) 구리, 구리 합금, 이종 금속이 도금된 구리 또는 이종 금속이 도금된 구리 합금인 선재; 및 ii) 상기 선재를 그라핀, 다이아몬드, DLC(다이아몬드 유사 탄소) 및 탄소나노튜브로 구성된 군으로부터 선택된 1종으로 코팅한 코팅층으로 구성된다. 이러한 본딩 와이어는 내산화성이 우수하여 상온에서도 오랫동안 보관할 수 있으며, 또한 경도가 높지 않아 반도체 칩에 접합될 때 반도체 칩에 크랙을 유발하지 않는다.The bonding wire of the present invention comprises i) a wire made of copper, a copper alloy, a copper alloy plated with dissimilar metals, or a copper alloy plated with dissimilar metals; And ii) a coating layer formed by coating the wire with one selected from the group consisting of graphene, diamond, DLC (diamond like carbon), and carbon nanotube. Such a bonding wire is excellent in oxidation resistance and can be stored at room temperature for a long time. Further, since the hardness is not high, a crack does not occur in the semiconductor chip when bonded to the semiconductor chip.

Description

탄소 동소체로 코팅된 선재를 포함하는 본딩 와이어{Bonding Wire Including Rod Coated With Carbon Allotrope}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a bonding wire including a wire coated with an isotactic carbon (Bonding Wire Including Rod Coated With Carbon Allotrope)

본 발명은 탄소 동소체로 코팅된 선재를 포함하는 본딩 와이어에 관한 것이다.The present invention relates to a bonding wire comprising a wire coated with a carbon isotope.

일반적인 반도체 패키지(100)는, 도 1에 나타낸 바와 같이, 실리콘(Si) 또는 게르마늄(Ge) 등의 부도체를 얇은 기판으로 하여 집적된 집적회로(IC)로 이루어지는 반도체 칩(10)과, 상기 반도체 칩(10)과 본딩 와이어(30)로 연결되어 각종 전기신호를 외부회로에 직접 입출력하는 리드 프레임의 리드부, 예컨대 리드 핑거(50)로 구성된다. 상기 본딩 와이어(30)와 반도체 칩(10)의 연결 부위는 압착볼(20)의 형태로 되어 있다.1, a general semiconductor package 100 includes a semiconductor chip 10 formed of an integrated circuit (IC) integrated with a non-conductor such as silicon (Si) or germanium (Ge) as a thin substrate, For example, a lead finger 50 connected to the chip 10 and the bonding wire 30 to directly input / output various electrical signals to / from an external circuit. The connecting portion between the bonding wire 30 and the semiconductor chip 10 is in the form of a compression ball 20.

상기 본딩 와이어(30)는, 도 2에 나타낸 바와 같이, 캐필러리(70)에서 빠져나온 일측 끝 부분을 방전 토치(EFO: Electro Flame Off)(60)를 이용하여 용융시킴으로써 소정 크기의 프리 에어볼(FAB : Free Air Ball)(90)을 형성한다. 그런 다음, 도 3에 나타낸 바와 같이, 상기 프리 에어볼(90)을 반도체 칩(10)에 접합시켜 압착볼(20)을 만들고 캐필러리(70)를 움직여 본딩 와이어(30)를 리드 핑거(50)로 이동시켜 접합한 후 끊어내는 절차를 연속적으로 진행하여 배선을 완료하게 된다.As shown in FIG. 2, the bonding wire 30 is formed by melting one end of the bonding wire 30, which has exited from the capillary 70, using a discharge torch (EFO: Electro Flame Off) 60, Thereby forming a ball (FAB: Free Air Ball) 90. 3, the pre-air ball 90 is bonded to the semiconductor chip 10 to form the compression ball 20, and the bonding wire 30 is moved to the lead finger (not shown) by moving the capillary 70 50), and then the process of connecting and disconnecting is performed continuously to complete the wiring.

이러한 본딩 와이어의 소재로서, 종래 기술은 내산화 특성 및 가공 특성이 우수한 순금 또는 금(Au) 합금을 사용하였다. 그러나, 금은 매우 고가이고 전기적 성질에 있어 전력용 IC 패키지(Power IC device) 및 최근 개발되고 있는 초고속 IC 패키지 등의 요구사항을 충족하지 못한다는 단점이 있다.As a material of such a bonding wire, the prior art uses pure gold or gold (Au) alloy excellent in oxidation resistance and processing characteristics. However, gold has a disadvantage in that it is very expensive and does not meet the requirements for electrical characteristics such as a power IC device and a recently developed ultra-high-speed IC package.

이러한 단점을 극복하기 위하여, 본딩 와이어의 소재로서 구리가 사용되었으며, 상기 구리는 전기적 저항이 작고 노이즈(noise)의 발생이 작으므로 전자회로의 신호 전달용으로 좋은 도체이다. 그리고, 상기 구리는 연성이 우수하여 반도체용 본딩 와이어의 형태인 극세선으로의 가공이 용이하며, 금보다 내열성, 기계적 성질, 가공 특성 및 전기적 성질이 우월하여 본딩 와이어의 소재로서 적합하고 재료비용이 매우 저렴하여 경제적인 이점이 있다. 그러나, 구리는 금에 비하여 내산화성이 약한 문제점이 있었다.In order to overcome this disadvantage, copper is used as the material of the bonding wire, and the copper is a good conductor for signal transmission of an electronic circuit because of low electrical resistance and low noise generation. The copper is excellent in ductility and can be easily processed into a fine wire in the form of a bonding wire for a semiconductor and is superior in heat resistance, mechanical properties, processing characteristics, and electrical properties to gold, It is very cheap and economical. However, copper has a problem in that oxidation resistance is weaker than gold.

이러한 문제점을 극복하기 위하여, 와이어 본딩 공정에서 포밍 가스(질소 + 수소)를 불어넣어 구리가 산화되지 않고 반도체 패키지에 실장될 수 있도록 하는 기술이 개발되었으나, 상기 구리는 포밍 가스에 의해 산화되지 않더라도 보관하는 과정에서 공기와 접촉하면서 산화되기 때문에 일주일 이상 상온에서 보관할 수 없는 단점이 있다. 또한 전기 도금법을 이용하여 구리의 표면에 팔라듐을 코팅하여 사용하는 기술도 개발되었으나, 본딩 와이어(30)를 용융시킴으로써 프리 에어볼(90)을 형성하는 과정에서 구리와 팔라듐이 합금을 형성하여 기계적 강도가 상승하여 반도체 칩(10)에 크랙을 유발할 수 있는 단점이 있다.In order to overcome such a problem, a technique has been developed in which a foaming gas (nitrogen + hydrogen) is blown in a wire bonding process so that copper can be mounted on a semiconductor package without being oxidized. However, It can not be stored at room temperature for over a week because it is oxidized in contact with air. In the process of forming the pre-air ball 90 by melting the bonding wire 30, the copper and the palladium are alloyed with each other and the mechanical strength There is a disadvantage in that cracks can be caused in the semiconductor chip 10.

따라서, 본 발명의 기술적 과제는 내열성, 기계적 성질, 가공 특성 및 전기적 성질 뿐만 아니라 내산화성도 우수한 본딩 와이어를 제공하는 것이다.Accordingly, a technical object of the present invention is to provide a bonding wire excellent in heat resistance, mechanical properties, processing characteristics, and electrical properties as well as oxidation resistance.

이와 같은 목적을 달성하기 위하여, 본 발명의 본딩 와이어는 i) 구리, 구리 합금, 이종 금속이 도금된 구리 또는 이종 금속이 도금된 구리 합금인 선재; 및 ii) 상기 선재를 그라핀, 다이아몬드, DLC(다이아몬드 유사 탄소) 및 탄소나노튜브 등 탄소 동소체로 구성된 군으로부터 선택된 1종으로 코팅한 코팅층으로 구성되는 것을 특징으로 한다.In order to achieve the above object, the bonding wire of the present invention comprises: i) a wire made of copper, a copper alloy, a copper alloy plated with dissimilar metals, or a copper alloy plated with dissimilar metals; And ii) a coating layer formed by coating the wire with one selected from the group consisting of carbon alloys such as graphene, diamond, DLC (diamond-like carbon), and carbon nanotubes.

본 발명에 따른 본딩 와이어는 내산화성이 우수하여 상온에서도 오랫동안 보관할 수 있으며, 또한 경도가 높지 않아 반도체 칩에 접합될 때 반도체 칩에 크랙을 유발하지 않는다.The bonding wire according to the present invention is excellent in oxidation resistance and can be stored at room temperature for a long time. Further, since the hardness is not high, the semiconductor chip does not crack when bonded to the semiconductor chip.

도 1은 일반적인 반도체 패키지(100)의 구성을 보여준다.
도 2는 일반적인 본딩 와이어(30)의 형태를 보여준다.
도 3은 프리 에어볼을 반도체 칩에 접합시켜 형성되는 통상의 압착볼(20)을 보여준다.FIG. 1 shows the construction of a general semiconductor package 100.
Fig. 2 shows a general form of the bonding wire 30. Fig.
3 shows a conventional compression ball 20 formed by bonding a pre-air ball to a semiconductor chip.

이하, 본 발명을 자세히 설명한다.Hereinafter, the present invention will be described in detail.

본 발명의 본딩 와이어는, i) 구리, 구리 합금, 이종 금속이 도금된 구리 또는 이종 금속이 도금된 구리 합금인 선재; 및 ii) 상기 선재를 탄소 동소체로 코팅한 코팅층으로 구성되는 것을 특징으로 하며, 상기 탄소 동소체로서 그라핀, 다이아몬드, DLC(Diamond Like Carbon : 다이아몬드 유사 탄소) 또는 탄소나노튜브를 사용할 수 있다.The bonding wire of the present invention comprises: i) a wire made of copper, a copper alloy, a copper alloy plated with dissimilar metals, or a copper alloy plated with dissimilar metals; And ii) a coating layer formed by coating the wire with the carbon isotope. The carbon isotope may be graphene, diamond, diamond like carbon (DLC), or carbon nanotubes.

본 발명의 선재로서 구리; 구리 합금; 이종 금속이 도금된 구리; 또는 이종 금속이 도금된 구리 합금;을 사용할 수 있으며, 그 중에서도 이종 금속이 도금된 구리; 또는 이종 금속이 도금된 구리 합금;을 사용하면 탄소 동소체 코팅층을 짧은 시간에 용이하게 성장시킬 수 있고 전기전도도의 개선효과가 커서 바람직하다.Copper as a wire rod of the present invention; Copper alloy; Copper of different metals; Or a copper alloy in which a different metal is plated, among which copper of a different metal is plated; Or a copper alloy plated with a dissimilar metal, the carbon isotope coating layer can be easily grown in a short time and the effect of improving electrical conductivity is large, which is preferable.

이러한 구리 또는 구리 합금을 도금하는데 사용되는 이종 금속은 구리 또는 구리 합금보다 융점이 높은 금속이며, 이러한 이종 금속으로서 구리보다 탄소고용도가 높은 Ni, Fe, Co, Ru, Rh, Pd, Ir, Pt 등의 금속을 1종 이상 사용할 수 있다. Fe, Co, Ru, Rh, Pd, Ir, and Pt having a higher carbon solubility than copper are used as the dissimilar metals used for plating the copper or copper alloy, May be used.

이러한 이종 금속에 의한 도금 두께는 0.1 내지 0.7 마이크로미터가 바람직하다. 상기 두께가 0.1 마이크로미터 미만일 경우에는 탄소 동소체 코팅층을 짧은 시간 내에 성장시키기 어렵고, 상기 두께가 0.7 마이크로미터를 초과하는 경우에는 본딩 와이어의 저항이 감소하며 제조 비용이 상승하는 단점이 있다.The plating thickness of the dissimilar metal is preferably 0.1 to 0.7 micrometers. When the thickness is less than 0.1 micrometer, it is difficult to grow the carbon isotope coating layer in a short time, and when the thickness exceeds 0.7 micrometers, the resistance of the bonding wire decreases and the manufacturing cost increases.

본 발명의 선재는 특정한 형태에 한정되지 않고 환봉 형태, 평각 형태 등 다양한 형태를 가질 수 있으며, 경량화를 위하여 선재는 단면적의 직경이 작을수록 바람직하다. 특히, 같은 두께의 탄소 동소체를 코팅하더라도 선재의 단면적의 직경이 작을수록 상대적으로 탄소 동소체의 코팅의 비율이 높아져 도전율의 상승 효과가 극대화할 수 있다. 바람직하게, 상기 선재의 단면적의 직경은 3 내지 200 ㎛이며, 선재의 단면적의 직경이 3 ㎛ 미만일 경우에는 캐필러리를 이용하여 접합하는 과정에서 정밀성이 떨어지며, 선재의 단면적의 직경이 200 ㎛를 초과할 경우에는 반도체의 경량화를 달성하기 어렵다.The wire rod of the present invention is not limited to a specific shape, but may have various shapes such as a round bar shape and a square shape. In order to reduce the weight, the wire rod preferably has a smaller cross-sectional area. Particularly, even if the carbon isotope of the same thickness is coated, the proportion of the coating of the carbon isotope increases as the diameter of the cross-sectional area of the wire becomes smaller, thereby maximizing the synergistic effect of the conductivity. Preferably, the diameter of the cross-sectional area of the wire is 3 to 200 占 퐉. When the diameter of the cross-sectional area of the wire is less than 3 占 퐉, the accuracy of the joining using the capillary is inferior. It is difficult to achieve a lightweight semiconductor.

본 발명의 탄소 동소체로서 그라핀, 다이아몬드, DLC(Diamond Like Carbon : 다이아몬드 유사 탄소) 또는 탄소나노튜브를 사용할 수 있으며, 이러한 탄소 동소체들은 우수한 내산화 특성을 가지고 있다. 따라서, 이러한 탄소 동소체에 의해 형성된 코팅층이 단층(single layer)으로 형성된 경우에도 선재에 산소 또는 이산화탄소 등의 가스가 투과될 수 없어 선재의 산화 또는 부식 및 변색을 효과적으로 방지할 수 있다. As the carbon isotope of the present invention, graphene, diamond, diamond like carbon (DLC), or carbon nanotubes can be used. These carbon isotopes have excellent oxidation resistance characteristics. Therefore, even when the coating layer formed of such a carbon isotope is formed into a single layer, gas such as oxygen or carbon dioxide can not be transmitted to the wire rod, and oxidation, corrosion and discoloration of the wire rod can be effectively prevented.

이에 따라, 탄소 동소체의 코팅층이 형성된 선재는 상온의 대기 중에서도 오랜 시간 방치하여도 안정하기 때문에 반도체 칩과의 안정적인 접착 강도(Ball shear, gf)를 유지할 수 있고, 프리 에어볼(FAB)을 형성하기 위하여 본딩 와이어를 용융하더라도 고온에서 안정한 탄소 동소체 코팅층은, 본딩 와이어의 직상단부에서 선재가 산화되는 것을 막을 수 있다. 그리고, 비코팅 선재(예를 들면, 구리 도체) 또는 비코팅 선재에 금속을 도금하거나 방청유를 도포하는 종래의 공정이 불필요하게 되어 비용과 생산성을 획기적으로 향상시킬 수 있다. 뿐만 아니라, 탄소 동소체들은 표면 에너지가 매우 낮기 때문에 프리 에어볼(FAB)이 형성될 때 선재의 프리 에어볼(FAB) 내에 포획되지 않고 바깥쪽으로 떨어져 나가기 때문에, 선재의 소재들과 탄소 동소체들이 합금을 형성하지 않으므로 경도가 상승하지 않아 반도체 칩에 손상을 일으킬 위험이 없다.Accordingly, since the wire rod formed with the coating layer of the carbon isomer is stable even after being left in the atmosphere at room temperature for a long time, it can maintain the stable bonding strength (ball shear, gf) with the semiconductor chip, Even if the bonding wire is melted, the carbon isotope coating layer stable at high temperature can prevent the wire rods from being oxidized directly at the upper end of the bonding wire. In addition, a conventional process of plating a metal on an uncoated wire (for example, a copper conductor) or an uncoated wire or coating an anti-rust oil is unnecessary, thereby remarkably improving the cost and the productivity. In addition, since carbon isotopes are very low in surface energy, they are not trapped in the pre-air ball (FAB) of the wire when the pre-air ball (FAB) is formed, There is no risk of damaging the semiconductor chip because the hardness is not increased.

또한, 상기 탄소 동소체 중에서도 특히 그라핀은, 2차 면상 구조를 갖기 때문에 접촉면이 넓어 더욱 우수한 전기 전도도 및 방열 특성을 발휘할 수 있다.Among the above-mentioned carbon isotopes, particularly, the graphene has a secondary planar structure and therefore has a wider contact surface, and can exhibit excellent electrical conductivity and heat radiation characteristics.

본 발명의 탄소 동소체를 선재에 코팅하는 방법은 다양하며, 예를 들면, CVD(Chemical Vapor Deposition), PECVD(Plasma Enhenced Chemical Vapor Deposition) 방식에 의해 선재에 직접적으로 증착하는 방법; 탄소 동소체 플레이크(flake) 등을 선재 위에 배열한 후 어닐링 하는 방법; 탄소 동소체 서스펜젼에 선재를 디핑(Dipping)하는 방법; 전기영동 침작(Electrophoretic Deposition) 방식에 의해 선재에 간접적으로 증착하는 방법; 등이 있다. 이러한 다양한 방법 중에서 CVD 방식을 이용하여 탄소 동소체를 선재에 코팅할 경우, 전기전도도가 높고, 균일성이 뛰어나며 탄소 동소체의 코팅 두께를 효율적으로 제어할 수 있어서 CVD 방식을 이용하는 것이 가장 바람직하다. 즉, CVD 방식에서, CH4 또는 C2H2 가스 등의 유량과 증착 온도를 높일수록, 코팅 후의 냉각 속도를 늦출수록, 탄소 동소체 코팅층의 두께가 두꺼워지므로, 이러한 점을 이용하여 탄소 동소체의 코팅 두께를 효율적으로 제어할 수 있다. 또한, CVD 방식을 이용할 경우 상압 환경에서도 탄소 동소체를 증착할 수 있기 때문에 연속 공정으로 제작할 수 있다는 장점도 있다.There are various methods of coating the carbon isotope of the present invention on the wire, for example, a method of directly depositing the wire on the wire by CVD (Chemical Vapor Deposition) or PECVD (Plasma Enceased Chemical Vapor Deposition) method; A method of arranging a carbon homogenous flake or the like on the wire and then annealing the same; A method of dipping a wire rod in a carbon isotope suspension; A method of indirectly depositing on a wire by an electrophoretic deposition method; . Of these various methods, it is most preferable to use a CVD method in order to control the coating thickness of the carbon isotope with high electrical conductivity, excellent uniformity, and the like when the carbon isotope is coated on the wire by the CVD method. That is, in the CVD method, as the flow rate and the deposition temperature of the CH 4 or C 2 H 2 gas are increased and the cooling rate after coating is lowered, the thickness of the carbon isotope coating layer becomes thicker. The thickness can be efficiently controlled. In addition, when a CVD method is used, carbon isotopes can be deposited even under atmospheric pressure.

추가적으로, 상기 탄소 동소체를 선재에 코팅한 후에 HNO3 용액 등을 이용하여 화학적 처리를 할 경우, 탄소 동소체의 코팅층에 N 또는 P 도핑(Doping)이 되어 탄소 동소체의 도전율을 더욱 상승시킬 수 있다. In addition, when the carbon isotope is coated on the wire and chemically treated with HNO 3 solution or the like, N or P doping is applied to the coating layer of the carbon isotope, and the conductivity of the carbon isotope can be further increased.

본 발명의 코팅층은 단층(single layer)이거나 복수개의 층으로 이루어질 수 있다. 예를 들어, 상기 복수개의 코팅층은, i) 그라핀 코팅층; 및 상기 그라핀 코팅층 위에 형성된 다이아몬드 코팅층;으로 이루어질 수 있거나, ii) 그라핀 코팅층; 상기 그라핀 코팅층 위에 형성된 다이아몬드 코팅층; 및 상기 다이아몬드 코팅층 위에 형성된 DLC(다이아몬드 유사 탄소) 코팅층으로 이루어질 수 있으며, 이러한 구체적 예에 한정되지 않는다.The coating layer of the present invention may be a single layer or a plurality of layers. For example, the plurality of coating layers may comprise: i) a graphene coating layer; And a diamond coating layer formed on the graphene coating layer, or ii) a graphene coating layer; A diamond coating layer formed on the graphene coating layer; And a DLC (diamond-like carbon) coating layer formed on the diamond coating layer. However, the present invention is not limited to these specific examples.

상기 코팅층은 단층이거나 복수개의 층이거나 관계없이, 그 두께는 0.35 내지 200 nm인 것이 바람직하다. 그 두께를 0.35 nm 미만으로 코팅하는 것은 현실적으로 불가능하며, 200 nm를 초과할 경우에는 탄소 동소체 코팅층이 선재 표면에서 분리되어 손상될 수 있다.It is preferable that the coating layer has a thickness of 0.35 to 200 nm regardless of whether it is a single layer or a plurality of layers. It is practically impossible to coat the layer with a thickness of less than 0.35 nm. If the thickness exceeds 200 nm, the carbon isotop coating layer may be separated from the surface of the wire and damaged.

이하 실시예를 들어 본 발명을 더 구체적으로 설명한다. 본 발명이 속하는 분야의 평균적 기술자는 아래 실시예에 기재된 실시 태양 외에 여러 가지 다른 형태로 본 발명을 변경할 수 있으며, 이하 실시예는 본 발명을 예시할 따름이지 본 발명의 기술적 사상의 범위를 아래 실시예 범위로 한정하기 위한 의도라고 해석해서는 아니된다.
Hereinafter, the present invention will be described more specifically by way of examples. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims and their equivalents. It should not be construed as an intention to limit the scope to example.

실험예Experimental Example 1 :  One : 그라핀Graphene 코팅층 사용 Use coating layer

본 발명의 본딩 와이어의 성능을 살펴보기 위하여 아래 표 1에 나타낸 선재의 코팅층을 갖는 본딩 와이어를 제조하였으며, 그 제조 과정은 다음과 같다.In order to examine the performance of the bonding wire of the present invention, a bonding wire having a coating layer of the wire material shown in Table 1 below was manufactured.

실시예 1~6과 비교예 1~2 및 4~6의 경우에는 구리를 신선한 후에 CVD 방식으로 그라핀 또는 DLC를 코팅하여 본딩 와이어를 완성하였고, 비교예 3의 경우에는 구리를 신선하는 공정 중에 팔라듐을 전기도금하여 본딩 와이어를 완성하였다.In the case of Examples 1 to 6 and Comparative Examples 1 to 2 and 4 to 6, bonding wire was formed by coating copper with graphene or DLC by CVD method, and in the case of Comparative Example 3, Palladium was electroplated to complete the bonding wire.

선재의 단면적의 직경(㎛)Diameter of cross section of wire (㎛) 선재의
재질Wire rod
material 코팅층의
두께(nm)Coating layer
Thickness (nm) 코팅층의 재질Material of coating layer 실시예 1Example 1
3
3

구리
Copper 0.350.35
그라핀
Graphene 실시예 2Example 2 100100 실시예 3Example 3 200200 실시예 4Example 4
20
20

구리
Copper 0.350.35
그라핀
Graphene 실시예 5Example 5 100100 실시예 6Example 6 200200 비교예 1Comparative Example 1 22 구리Copper 0.350.35 그라핀Graphene 비교예 2Comparative Example 2 200200 비교예 3Comparative Example 3 2020 구리Copper 100100 팔라듐Palladium 비교예 4Comparative Example 4
220
220

구리
Copper 0.30.3
그라핀
Graphene
비교예 5Comparative Example 5 100100 비교예 6Comparative Example 6 220220

물성 측정 및 평가Measurement and evaluation of physical properties

상기 실시예(1~6) 및 비교예(1~6)에 따르는 본딩 와이어에 대하여, 1) 프리 에어볼(FAB)의 경도, 2) 상기 프리 에어볼(FAB)과 반도체 칩과의 접착 강도(Ball shear), 3) 90 일이 경과한 후의 상기 프리 에어볼(FAB)과 반도체 칩과의 접착 강도(Ball shear), 4) 90 일이 경과한 후의 IMC(금속간 화합물) 두께를 측정하여 하기의 표 2에 나타냈다. (1) the hardness of the pre-air ball (FAB), (2) the bonding strength between the pre-air ball (FAB) and the semiconductor chip 3) Ball shear between the pre-air ball (FAB) and the semiconductor chip after 90 days passed; 4) IMC (intermetallic compound) thickness after 90 days passed; The results are shown in Table 2 below.

FAB 경도(Hv)FAB hardness (Hv) 접착 강도(gf)Adhesive strength (gf) 90일 경과한 후의
접착 강도(gf)90 days after
Adhesive strength (gf) 90일 경과한 후의
IMC 두께(nm)90 days after
IMC Thickness (nm) 실시예 1Example 1 7272 0.50.5 0.50.5 -- 실시예 2Example 2 7070 0.50.5 0.50.5 -- 실시예 3Example 3 7272 0.50.5 0.50.5 -- 실시예 4Example 4 6666 1919 2020 -- 실시예 5Example 5 6666 1818 1717 -- 실시예 6Example 6 6767 2121 2222 -- 비교예 1Comparative Example 1 7575 0.50.5 0.00.0 -- 비교예 2Comparative Example 2 7171 0.50.5 0.00.0 -- 비교예 3Comparative Example 3 6565 1919 2121 135135 비교예 4Comparative Example 4 6464 19211921 20122012 -- 비교예 5Comparative Example 5 6565 19061906 18951895 -- 비교예 6Comparative Example 6 6464 18841884 19271927 --

상기 표 2의 결과에서 볼 수 있듯이, 본 발명의 범위에 속하는 선재의 직경 및 코팅층(그라핀)의 두께를 갖는 실시예 1~6은 프리 에어볼(FAB) 경도가 높지 않아서, 반도체 칩에 손상을 일으키지 않았으며 90일이 지난 후에도 이러한 접착 강도가 유지되었다.As can be seen from the results of Table 2, in Examples 1 to 6, in which the diameter of the wire rod and the thickness of the coating layer (graphene) were within the range of the present invention, the hardness of the pre-air ball (FAB) And this bond strength was maintained even after 90 days.

반면, 본 발명의 범위를 벗어나는 선재의 직경을 갖는 비교예 1~2(3 ㎛ 미만)의 경우, 프리 에어볼(FAB) 경도 및 반도체 칩과의 접착 강도 모두 높지 않았으나 90일이 지난 후 반도체 칩에서 본딩 와이어가 떨어져 나갔고, 비교예 4~6(200 ㎛ 초과)의 경우 반도체 칩과의 접착 강도가 상당히 높아 반도체 칩에 손상을 일으켰다.On the other hand, in the case of Comparative Examples 1 and 2 (less than 3 mu m) having a wire diameter outside the range of the present invention, the hardness of the pre-air ball (FAB) and the bonding strength to the semiconductor chip were not high, The bonding wires were separated from the semiconductor chips. In the case of Comparative Examples 4 to 6 (exceeding 200 占 퐉), the bonding strength with the semiconductor chips was considerably high and the semiconductor chips were damaged.

또한, 비교예 3(팔라듐으로 코팅된 구리 선재 사용)은, 90일 후에 금속간 화합물(IMC)가 두껍게 형성되어 반도체 칩과 압축볼의 계면에 크랙이 발생되었다.
Further, in Comparative Example 3 (using copper wire coated with palladium), after 90 days, the intermetallic compound (IMC) was formed thick and cracks were generated at the interface between the semiconductor chip and the compression ball.

실험예Experimental Example 2 : 탄소나노튜브 코팅층 사용 2: Using carbon nanotube coating layer

본 발명의 본딩 와이어의 성능을 살펴보기 위하여 아래 표 3에 나타낸 선재의 코팅층을 갖는 본딩 와이어를 제조하였다. 이때, 실험예 1과 같은 방식으로 본딩 와이어를 제조하되, 코팅층의 재질로서 그라핀 대신 탄소나노튜브를 사용하였다.In order to examine the performance of the bonding wire of the present invention, a bonding wire having a coating layer of wire rod shown in Table 3 below was prepared. At this time, a bonding wire was manufactured in the same manner as in Experimental Example 1, except that carbon nanotubes were used instead of graphene as a material of the coating layer.

선재의 단면적의 직경(㎛)Diameter of cross section of wire (㎛) 선재의
재질Wire rod
material 코팅층의
두께(nm)Coating layer
Thickness (nm) 코팅층의 재질Material of coating layer 실시예 7Example 7
3
3

구리
Copper 0.350.35
탄소나노튜브
Carbon nanotube 실시예 8Example 8 100100 실시예 9Example 9 200200 실시예 10Example 10
20
20

구리
Copper 0.350.35
탄소나노튜브
Carbon nanotube 실시예 11Example 11 100100 실시예 12Example 12 200200 비교예 7Comparative Example 7 22 구리Copper 0.350.35 탄소나노튜브Carbon nanotube 비교예 8Comparative Example 8 200200 비교예 9Comparative Example 9
220
220

구리
Copper 0.30.3
탄소나노튜브
Carbon nanotube
비교예 10Comparative Example 10 100100 비교예 11Comparative Example 11 220220

물성 측정 및 평가Measurement and evaluation of physical properties

실시예(7~12) 및 비교예(7~11)에 따르는 본딩 와이어에 대하여, 1) 프리 에어볼(FAB)의 경도, 2) 상기 프리 에어볼(FAB)과 반도체 칩과의 접착 강도(Ball shear), 3) 90 일이 경과한 후의 상기 프리 에어볼(FAB)과 반도체 칩과의 접착 강도(Ball shear)를 측정하여 하기의 표 4에 나타냈다. (1) the hardness of the pre-air ball (FAB), (2) the bonding strength between the pre-air ball (FAB) and the semiconductor chip ( Ball shear), and 3) Ball shear between the pre-air ball (FAB) and the semiconductor chip after 90 days had elapsed was measured and is shown in Table 4 below.

FAB 경도(Hv)FAB hardness (Hv) 접착 강도(gf)Adhesive strength (gf) 90일 경과한 후의 접착 강도(gf)The adhesive strength (gf) after 90 days passed 실시예 7Example 7 7171 0.50.5 0.50.5 실시예 8Example 8 7474 0.50.5 0.50.5 실시예 9Example 9 6969 0.50.5 0.50.5 실시예 10Example 10 6666 2020 1919 실시예 11Example 11 6868 1919 2121 실시예 12Example 12 6666 2121 2020 비교예 7Comparative Example 7 7777 00 00 비교예 8Comparative Example 8 7777 0.50.5 00 비교예 9Comparative Example 9 6464 18421842 19321932 비교예 10Comparative Example 10 6363 19391939 18971897 비교예 11Comparative Example 11 6363 20132013 20022002

상기 표 4의 결과에서 볼 수 있듯이, 본 발명의 범위에 속하는 선재의 직경 및 코팅층(탄소나노튜브)의 두께를 갖는 실시예 7~12는 프리 에어볼(FAB) 경도가 높지 않아서, 반도체 칩에 손상을 일으키지 않았으며 90일이 지난 후에도 이러한 접착 강도가 유지되었다.As can be seen from the results of Table 4, in Examples 7 to 12, in which the diameter of the wire rod and the thickness of the coating layer (carbon nanotube) were within the range of the present invention, the hardness of the pre- This bond strength was maintained even after 90 days without causing any damage.

반면, 본 발명의 범위를 벗어나는 선재의 직경을 갖는 비교예 7~8(3 ㎛ 미만)의 경우, 프리 에어볼(FAB) 경도 및 반도체 칩과의 접착 강도 모두 높지 않았으나 90일이 지난 후 반도체 칩에서 본딩 와이어가 떨어져 나갔고, 비교예 9~11(200 ㎛ 초과)의 경우 반도체 칩과의 접착 강도가 상당히 높아 반도체 칩에 손상을 일으켰다.
On the other hand, in the case of Comparative Examples 7 to 8 (less than 3 mu m) having a wire diameter outside the scope of the present invention, the hardness of the pre-air ball (FAB) and the bonding strength to the semiconductor chip were not high, And the bonding strength with the semiconductor chip was considerably high in the case of Comparative Examples 9 to 11 (exceeding 200 mu m), causing damage to the semiconductor chip.

본 명세서의 도면에 사용된 부호는 다음을 의미한다.
10 : 반도체 칩
20 : 압착볼
30 : 본딩 와이어
50 : 리드 핑거
60 : 방전 토치(EFO: Electro Flame Off)
70 : 캐필러리
90 : 프리 에어볼(FAB : Free Air Ball)
100 : 반도체 패키지The symbols used in the drawings in the present specification mean the following.
10: Semiconductor chip
20: Squeeze ball
30: Bonding wire
50: Lead finger
60: Electro Flame Off (EFO)
70: Capillary
90: Free Air Ball (FAB)
100: semiconductor package

Claims (6)

구리, 구리 합금, 이종 금속이 도금된 구리 또는 이종 금속이 도금된 구리 합금으로 이루어진 선재; 및 상기 선재를 그라핀, 다이아몬드, DLC(다이아몬드 유사 탄소) 및 탄소나노튜브로 구성된 군으로부터 선택된 1종으로 코팅한 코팅층으로 구성되는 본딩 와이어에 있어서,
상기 선재의 단면적의 직경은 3 내지 200 ㎛이고, 상기 코팅층의 두께는 0.35 내지 200 nm인 것을 특징으로 하는 본딩 와이어.A wire made of copper, a copper alloy, a copper alloy plated with dissimilar metals, or a copper alloy plated with dissimilar metals; And a coating layer formed by coating the wire with one kind selected from the group consisting of graphene, diamond, DLC (diamond like carbon), and carbon nanotube,
Wherein a diameter of the cross-sectional area of the wire rod is 3 to 200 mu m, and a thickness of the coating layer is 0.35 to 200 nm. 제 1항에 있어서,
상기 이종 금속은 Ni, Fe, Co, Ru, Rh, Pd, Ir 및 Pt로 구성된 군으로부터 선택된 1종 이상인 것을 특징으로 하는 본딩 와이어.The method according to claim 1,
Wherein the dissimilar metal is at least one selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Ir and Pt. 삭제delete 제 1항에 있어서,
상기 코팅층은 단층이거나 복수개의 층으로 이루어진 것을 특징으로 하는 본딩 와이어.The method according to claim 1,
Wherein the coating layer is a single layer or a plurality of layers. 삭제delete 제 1항에 있어서,
상기 코팅층은 CVD 방식에 의해 코팅된 것을 특징으로 하는 본딩 와이어.The method according to claim 1,
Wherein the coating layer is coated by a CVD method.
KR1020110089078A 2011-09-02 2011-09-02 Bonding Wire Including Rod Coated With Carbon Allotrope KR101829907B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020110089078A KR101829907B1 (en) 2011-09-02 2011-09-02 Bonding Wire Including Rod Coated With Carbon Allotrope
PCT/KR2012/006721 WO2013032175A2 (en) 2011-09-02 2012-08-23 Bonding wire including a wire rod coated with a carbon allotrope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110089078A KR101829907B1 (en) 2011-09-02 2011-09-02 Bonding Wire Including Rod Coated With Carbon Allotrope

Publications (2)

Publication Number Publication Date
KR20130025646A KR20130025646A (en) 2013-03-12
KR101829907B1 true KR101829907B1 (en) 2018-02-19

Family

ID=47757025

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110089078A KR101829907B1 (en) 2011-09-02 2011-09-02 Bonding Wire Including Rod Coated With Carbon Allotrope

Country Status (2)

Country Link
KR (1) KR101829907B1 (en)
WO (1) WO2013032175A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798143A (en) 1994-07-18 1998-08-25 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland CVD process for making a hollow diamond tube
JP2008519454A (en) * 2004-11-04 2008-06-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method for connecting circuits based on nanotubes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2895393B1 (en) * 2005-12-23 2008-03-07 Arkema Sa PROCESS FOR THE SYNTHESIS OF CARBON NANOTUBES
KR20090000422A (en) * 2007-06-28 2009-01-07 앰코 테크놀로지 코리아 주식회사 Conductive wire, wire spool, wire bonding machine, leadframe, and leadframe clamp comprises corrosion prevent metal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798143A (en) 1994-07-18 1998-08-25 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland CVD process for making a hollow diamond tube
JP2008519454A (en) * 2004-11-04 2008-06-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Method for connecting circuits based on nanotubes

Also Published As

Publication number Publication date
KR20130025646A (en) 2013-03-12
WO2013032175A4 (en) 2013-06-13
WO2013032175A2 (en) 2013-03-07
WO2013032175A3 (en) 2013-04-25

Similar Documents

Publication Publication Date Title
US10950570B2 (en) Bonding wire for semiconductor device
US20130233593A1 (en) Composite wire of silver-palladium alloy coated with metallic thin film and method thereof
TWI567842B (en) Graphene coated silver alloy wire and methods for manufacturing the same
EP2662890B1 (en) Method for making an aluminium coated copper bond wire
CN201975388U (en) Anti-oxidation copper-based bonding wire
CN105393352A (en) Copper bond wire and method of making the same
US20130233594A1 (en) Composite wire of silver-gold-palladium alloy coated with metal thin film and method thereof
EP3236490A1 (en) Bonding wire for semiconductor device
CN104073676A (en) Bonding silver alloy wire for semiconductor, and manufacturing method thereof
US20180076167A1 (en) Metallic ribbon for power module packaging
CN115362537A (en) Bonding wire for semiconductor device
EP2662891B1 (en) Method for making an aluminium coated copper bond wire
WO2014137288A1 (en) Palladium coated copper wire for bonding applications
KR101829907B1 (en) Bonding Wire Including Rod Coated With Carbon Allotrope
KR101251011B1 (en) Copper-based bonding wire coated by palladium and semiconductor package having the same
EP3557609A1 (en) Method of manufacturing an aluminium coated copper ribbon and a device using the same
TWI559417B (en) Bonding wire for power module package and method of manufacturing the same
JP5293728B2 (en) Bonding wire
Tseng et al. Wire bonding of Au-coated Ag wire: Bondwire properties, bondability and IMCs formation
CN109390309A (en) A kind of coated copper alloy wire in surface and its manufacturing method
KR101451361B1 (en) Cu alloy bonding wire for semiconductor package
KR101181878B1 (en) Method of manufacturing copper-based bonding wire
EP3230482B1 (en) Copper based bonding wire for a semiconductor device
WO2016104121A1 (en) Copper bonding wire
WO2014137287A1 (en) Palladium coated copper wire for bonding applications

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant