KR101815588B9 - 페로브스카이트 나노결정입자 및 이를 이용한 광전자 소자 - Google Patents

페로브스카이트 나노결정입자 및 이를 이용한 광전자 소자

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Publication number
KR101815588B9
KR101815588B9 KR1020150156172A KR20150156172A KR101815588B9 KR 101815588 B9 KR101815588 B9 KR 101815588B9 KR 1020150156172 A KR1020150156172 A KR 1020150156172A KR 20150156172 A KR20150156172 A KR 20150156172A KR 101815588 B9 KR101815588 B9 KR 101815588B9
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KR
South Korea
Prior art keywords
same
optoelectronic device
nanocrystal particle
perovskite nanocrystal
perovskite
Prior art date
Application number
KR1020150156172A
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English (en)
Other versions
KR20160055090A (ko
KR101815588B1 (ko
Inventor
이태우
임상혁
김영훈
조힘찬
Original Assignee
포항공과대학교 산학협력단
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Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=56109627&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101815588(B9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 포항공과대학교 산학협력단 filed Critical 포항공과대학교 산학협력단
Priority to US15/524,421 priority Critical patent/US10193088B2/en
Priority to PCT/KR2015/011959 priority patent/WO2016072805A1/ko
Publication of KR20160055090A publication Critical patent/KR20160055090A/ko
Application granted granted Critical
Publication of KR101815588B1 publication Critical patent/KR101815588B1/ko
Publication of KR101815588B9 publication Critical patent/KR101815588B9/ko

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Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10087366B2 (en) * 2013-10-23 2018-10-02 The Board Of Trustees Of The Leland Stanford Junior University Two-dimensional perovskite phosphor and method of formation
CN107111227B (zh) * 2014-12-23 2021-03-23 Asml荷兰有限公司 光刻图案化工艺和在其中使用的抗蚀剂
US10151858B2 (en) * 2016-03-28 2018-12-11 Nanyang Technological University Device including halide perovskite structure, methods of forming and operating the same
CN109196147B (zh) * 2016-04-22 2021-09-07 普林斯顿大学托管委员会 有机-无机混合钙钛矿纳米晶体及其制备方法
CN109804479B (zh) * 2016-07-27 2023-05-30 南洋理工大学 热载流子太阳能电池及其形成方法
US11702762B2 (en) 2016-08-11 2023-07-18 Avantama Ag Luminescent crystals and manufacturing thereof
JP2018529793A (ja) * 2016-08-11 2018-10-11 アファンタマ アクチェンゲゼルシャフト 発光性結晶及びその製造
US10796901B2 (en) * 2016-09-29 2020-10-06 Nanoco Technologies Ltd. Shelling of halide perovskite nanoparticles for the prevention of anion exchange
KR101908708B1 (ko) * 2016-10-12 2018-10-17 성균관대학교산학협력단 페로브스카이트 나노결정 박막, 이의 제조 방법 및 이를 포함하는 발광 소자
KR101776533B1 (ko) * 2016-11-03 2017-09-07 현대자동차주식회사 접합식 페로브스카이트 태양전지의 제조방법
KR101878341B1 (ko) * 2016-11-29 2018-07-13 울산과학기술원 양자점 발광 다이오드, 및 상기 양자점 발광 다이오드의 제조 방법
KR101878340B1 (ko) * 2016-11-29 2018-07-13 울산과학기술원 표면이 부동태화된 양자점, 및 양자점 표면의 부동태화 방법
KR101902165B1 (ko) * 2016-12-29 2018-10-01 경희대학교 산학협력단 코어-쉘 구조의 페로브스카이트 나노결정 입자 및 그의 제조 방법
US11203817B2 (en) * 2017-06-30 2021-12-21 Uchicago Argonne, Llc One-step in situ solution growth for lead halide perovskite
FR3069247B1 (fr) * 2017-07-20 2019-07-26 Universite D'angers Perovskites hybrides organique-inorganique
KR102357896B1 (ko) * 2017-07-27 2022-02-04 한국과학기술원 페로브스카이트를 이용한 백라이트 유닛 및 이를 포함하는 액정표시장치
CN107919439B (zh) * 2017-11-15 2020-01-14 武汉理工大学 一种稳定的钙钛矿太阳能电池及其制备方法
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US20210104366A1 (en) * 2018-04-10 2021-04-08 Kao Corporation Light absorption layer, photoelectric conversion element, and solar cell
CN110408378A (zh) * 2018-04-28 2019-11-05 Tcl集团股份有限公司 核壳量子点材料及其制备方法
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CN108649083B (zh) * 2018-05-14 2020-07-07 纳晶科技股份有限公司 功能层、其制作方法、电致发光器件和太阳能电池
CN108560056B (zh) * 2018-05-17 2020-02-14 武汉大学 一种二维钙钛矿单晶材料及其制备方法
GB201811537D0 (en) * 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Turnable blue emitting lead halide perovskites
CN108864176B (zh) * 2018-07-25 2020-06-26 同济大学 一种卤化铅杂化材料及其制备方法
CN109411554B (zh) * 2018-09-10 2021-02-05 暨南大学 一种阴阳离子共掺杂无机钙钛矿薄膜及其制备方法与应用
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JP7349448B2 (ja) * 2018-11-09 2023-09-22 株式会社半導体エネルギー研究所 発光デバイス、電子機器及び照明装置
CN109786553A (zh) * 2018-11-29 2019-05-21 华东理工大学 一种自发渐变掺杂钙钛矿薄膜、制备方法及其应用
KR20200074896A (ko) 2018-12-17 2020-06-25 서울대학교산학협력단 금속 할라이드 페로브스카이트 발광소자 및 이의 제조방법
CN109879761B (zh) * 2019-03-29 2020-11-10 西安交通大学 一种非铅钙钛矿光电功能材料、太阳能电池及其制备方法和应用
KR102191703B1 (ko) * 2019-04-16 2020-12-17 서울대학교산학협력단 패시베이션 층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
CN112029493B (zh) * 2019-06-04 2024-02-13 致晶科技（北京）有限公司 一种复合发光材料、其制备方法及其应用
EP3997258A1 (en) 2019-07-08 2022-05-18 The Regents of the University of California Synthesis of europium halide perovskites in solution phase
KR102301723B1 (ko) * 2019-07-30 2021-09-13 서울대학교산학협력단 하이브리드 파장변환체, 이의 제조방법 및 이를 포함하는 발광장치
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JP2021082726A (ja) * 2019-11-20 2021-05-27 国立大学法人電気通信大学 量子ドット、これを用いた光デバイス、及び量子ドットの作製方法
KR102406963B1 (ko) * 2019-12-16 2022-06-13 에스엔디스플레이 주식회사 결점이 제어된 금속 할라이드 페로브스카이트 발광 물질 및 이를 포함하는 발광 소자
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KR102484464B1 (ko) * 2020-02-13 2023-01-02 고려대학교 산학협력단 무기 나노입자 박막을 포함하는 전자 부재의 제조 방법 및 이에 의해 제조된 전자 부재
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US20220145174A1 (en) * 2020-11-05 2022-05-12 Seoul National University R&Db Foundation Perovskite color converter and method of manufacturing the same
CN112397651B (zh) * 2020-11-17 2023-07-14 华北电力大学 一种新戊酸根掺杂的全无机钙钛矿太阳能电池及制备方法
WO2022113984A1 (ja) * 2020-11-25 2022-06-02 出光興産株式会社 色変換粒子
KR20240039019A (ko) * 2021-09-10 2024-03-26 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 복합 미립자, 태양 전지, 광전 변환 소자용 부재, 및 광전 변환 소자
CN113880718B (zh) * 2021-11-05 2023-10-10 中国科学院福建物质结构研究所 具有共生结构的卤化物钙钛矿材料、制备方法及其用途
US20230165129A1 (en) * 2021-11-22 2023-05-25 Huawei Technologies Canada Co., Ltd. Wide bandgap perovskite quantum dots in a perovskite matrix and process for preparing same
KR20230076230A (ko) 2021-11-24 2023-05-31 페롤레드 주식회사 미세유체 하이브리드 반응기를 포함하는 페로브스카이트 나노결정 제조장치 및 이를 이용한 페로브스카이트 나노결정 제조방법
CN114315156B (zh) * 2021-11-30 2023-12-29 无锡极电光能科技有限公司 钙钛矿量子点釉料、光伏玻璃及其制备方法和光伏组件
KR102636980B1 (ko) * 2021-12-03 2024-02-16 한국생산기술연구원 페로브스카이트 나노입자의 제조방법
CN115851273B (zh) * 2022-12-16 2023-12-15 吉林大学 一种稀土掺杂钙钛矿纳米晶合成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420056B1 (en) * 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
GB2356738B (en) * 1999-09-15 2004-03-17 Ibm Ionic salt dyes as amorphous, thermally stable emitting and charge transport layers in organic light emitting diodes
WO2005083811A2 (en) * 2003-09-23 2005-09-09 Evergreen Solar, Inc. Organic solar cells including group iv nanocrystals and method of manufacture
DE102007024275A1 (de) * 2007-05-23 2008-11-27 Endress + Hauser Flowtec Ag Verfahren zum Messen und/oder Überwachen eines Strömungsparameters und entsprechende Vorrichtung
JP5540407B2 (ja) * 2008-07-11 2014-07-02 独立行政法人物質・材料研究機構 発光ナノシート及びこれを用いた蛍光照明体、太陽電池及びカラーディスプレー。
KR101501644B1 (ko) * 2008-11-27 2015-03-12 삼성디스플레이 주식회사 나노 입자의 제조 방법, 발광 소자의 제조 방법 및 표시 기판의 제조 방법
JP2012072037A (ja) * 2010-09-29 2012-04-12 Tdk Corp 誘電体磁器組成物およびその製造方法ならびにセラミック電子部品
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
KR20140007045A (ko) * 2012-07-05 2014-01-16 한국화학연구원 나노구조 유-무기 하이브리드 태양전지
EP2897178A4 (en) * 2012-09-12 2016-05-25 Korea Res Inst Chem Tech SOLAR CELL HAVING LIGHT ABSORBING STRUCTURE
KR101531536B1 (ko) * 2012-09-12 2015-07-07 한국화학연구원 형상 및 다공성이 제어된 상부 광활성 층을 가진 무／유기 하이브리드 태양전지 제조방법
CN103882558B (zh) * 2014-03-10 2016-02-10 陕西科技大学 一种钙钛矿结构AgNbO3纤维及其制备方法
CN104134711B (zh) * 2014-07-18 2016-03-09 中国电子科技集团公司第四十八研究所 一种钙钛矿太阳能电池的制备方法

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