KR101808793B1 - Circuit protection device and method of manufacturing the same - Google Patents

Circuit protection device and method of manufacturing the same Download PDF

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Publication number
KR101808793B1
KR101808793B1 KR1020150071828A KR20150071828A KR101808793B1 KR 101808793 B1 KR101808793 B1 KR 101808793B1 KR 1020150071828 A KR1020150071828 A KR 1020150071828A KR 20150071828 A KR20150071828 A KR 20150071828A KR 101808793 B1 KR101808793 B1 KR 101808793B1
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South Korea
Prior art keywords
esd protection
noise filter
pattern
electrode
forming
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KR1020150071828A
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Korean (ko)
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KR20160137146A (en
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정준호
고선주
김태윤
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주식회사 모다이노칩
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Priority to KR1020150071828A priority Critical patent/KR101808793B1/en
Priority to PCT/KR2016/004586 priority patent/WO2016190559A1/en
Publication of KR20160137146A publication Critical patent/KR20160137146A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/043—Printed circuit coils by thick film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2804—Printed windings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/06—Coil winding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/10—Connecting leads to windings

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

The ESD protection unit includes a thick film process or a thin film process. The noise filter unit is formed by a thin film process. The ESD protection unit is formed by a thin film process And a method of manufacturing the same.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit protection device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit protection device, and more particularly, to a circuit protection device in which an electrostatic discharge (ESD) device and a common mode noise filter are stacked in a single chip, and a manufacturing method thereof.

Various frequency bands have been used in accordance with the multifunctionalization of portable electronic devices such as smart phones. That is, a plurality of functions using different frequency bands such as wireless LAN (wireless LAN), bluetooth, and GPS are adopted in one smartphone. In addition, due to the high integration of electronic devices, the internal circuit density in a limited space is increased, thereby causing noise interference between internal circuits inevitably.

A plurality of circuit protection devices are used to suppress noise at various frequencies of the portable electronic device and to suppress noise between the internal circuits. For example, a capacitor, a chip bead, a common mode noise filter, or the like, which removes noise in different frequency bands, are used. Here, the common mode noise filter has a structure in which two choke coils are combined into one, can pass the signal current of the differential mode, and can remove only the common mode noise current. That is, the common mode noise filter can classify and remove the differential current signal current and common mode noise current, which are AC currents. An example of such a common mode noise filter is disclosed in Korean Patent Publication No. 2013-0035474.

In addition, since electronic devices are sensitive to external stimuli, when a small abnormal voltage and high frequency noise are introduced into an internal circuit of an electronic device from the outside, a circuit is broken or a signal is distorted. In the differential mode, passive components such as diodes and varistors must be used separately to suppress the ESD that may occur at the input / output terminals together with the common mode noise filter. When a separate passive component is used for the input / output terminal to cope with ESD, the mounting area is widened and the manufacturing cost is increased. That is, since a plurality of varistors for preventing noise and a varistor for preventing ESD must be provided, the mounting area increases and a plurality of devices are required, resulting in an increase in manufacturing cost. In addition, a signal distortion occurs due to a varistor or the like for preventing ESD. In other words, the varistor serves as a capacitor in a normal operating state of an electronic device to which no transient voltage is applied, and the capacitance of the capacitor changes at a high frequency. Therefore, when a varistor element is used in a high- There arises a problem that the phenomenon occurs.

On the other hand, since the common mode noise filter is required to be mainly used in a smart phone or the like, the thin film type common mode noise filter gradually replaces the coil type common mode noise filter. The thin film common mode noise filter forms a coil pattern by forming a metal layer by electroplating. That is, the thin film type common mode noise filter has a structure in which a seed layer and a photosensitive layer are formed on a substrate, the photosensitive layer is patterned in a coil shape, an electroplating process is performed to grow a metal layer from the seed layer, And a step of forming an insulating layer thereon is repeated a plurality of times. In order to connect the lower coil pattern and the upper coil pattern, a via hole should be formed and a via hole should be filled. In order to fill the via hole, a seed layer is formed, a via pattern is formed by photolithography and development, After the growth, the metal layer and the seed layer formed in the region other than the via hole are removed. The conventional common mode noise filter has a complicated process because the seed layer formation, the photolithography and the development process must be performed to fill the via hole.

The present invention provides a circuit protection device and a method of manufacturing the same that can reduce the mounting area by integrating an ESD protection element and a common mode noise filter.

The present invention provides a circuit protection device in which an ESD protection device formed by a thick film or thin film process and a common mode noise filter formed by a thin film process are implemented in one chip, and a method of manufacturing the same.

The present invention provides a circuit protection device and a manufacturing method thereof that can simplify the manufacturing process of the common mode noise filter.

A method of manufacturing a circuit protection device according to an embodiment of the present invention includes: forming an ESD protection portion on a substrate; And forming a noise filter portion on the ESD protection portion, wherein the ESD protection portion is formed by a thick film process or a thin film process, and the noise filter portion is formed by a thin film process.

The ESD protection unit includes first and second internal electrodes spaced apart from each other in the vertical direction, and an ESD protection layer formed in contact with the first and second internal electrodes. The noise filter unit includes a plurality of coils And a lead pattern connected to the coil pattern and exposed to the outside.

A first external electrode connected to the first internal electrode and connected to the ground terminal, and a second external electrode connected to the second internal electrode and the lead pattern and connected to the signal input terminal.

The first outer electrode is partially formed at the same time as the first inner electrode, and the second outer electrode is partially formed at the same time as the second inner electrode. The first and second outer electrodes are formed in the coil pattern and the outgoing pattern .

Wherein the step of fabricating the noise filter portion comprises: forming a first portion of a plating lead and a second external electrode connected thereto and a first coil pattern; Forming an insulating film on the first coil pattern and then forming a via hole exposing the first coil pattern and the first portion of the second external electrode; Forming a via plug for filling the via hole from the first portion of the first coil pattern and the second external electrode by applying power through the plating lead line; And forming a second portion of the second external electrode and a second coil pattern connected to the via plug on the insulating layer.

At least one coil pattern is stacked in the vertical direction on the second coil pattern, and a plurality of the coil patterns stacked in the vertical direction are arranged in the horizontal direction in a region between the plating lead lines.

The noise filter unit may be formed in contact with the ESD protection unit, or may be formed as a separate process from the ESD protection unit and bonded to the ESD protection unit.

The ESD protection portion is formed between the vertical coil patterns.

The ESD protection layer formed by the thick film process is a material obtained by mixing at least one conductive material including RuO 2 , Pt, Pd, Ag, Au, Ni, Cr, and W with at least one organic material including PVA and PVB .

And forming the ESD protection layer and then performing a heat treatment process at 600 ° C to 1000 ° C.

The ESD protection layer formed by the thin film process may include at least one conductive material including RuO 2 , Pt, Pd, Ag, Au, Ni, Cr, and W to at least one polymer including polyimide, epoxy resin, and benzocyclobutene. And the like.

And forming the ESD protection layer and then performing a heat treatment process at 100 ° C to 400 ° C.

A circuit protection device according to another aspect of the present invention is a circuit protection device manufactured by the above method including an ESD protection unit and a noise filter unit formed on a substrate and an external electrode connected to the ESD protection unit and the noise filter unit The ESD protection unit includes first and second internal electrodes spaced apart from each other in the vertical direction, and an ESD protection layer formed in contact with the first and second internal electrodes. The noise filter unit includes a plurality of coil patterns, The external electrode includes a first external electrode connected to the first internal electrode and connected to the ground terminal, and a second external electrode connected to the second internal electrode and the outgoing pattern, And a second external electrode connected to the terminal.

The first internal electrodes are spaced apart from each other by a predetermined distance, and the ESD protection layer is formed between the first internal electrodes.

The external electrodes are formed on the side surface and the upper surface of the laminate from the substrate.

The circuit protection device according to the embodiments of the present invention can be formed by stacking the ESD protection part and the noise filter part in one device, thereby performing the ESD removing function as well as the noise removal by using one device . Therefore, compared to the conventional one using two or more separate devices to protect the common mode noise and ESD, the device can be manufactured in a single chip and miniaturized. Therefore, the size of the electronic device can be prevented from increasing, the mounting area can be drastically reduced, Distortion of the input / output signal can be prevented by using the device, and the reliability of the electronic device can be improved.

In addition, the ESD protection part may be formed by a thick film or thin film process, the noise filter part may be formed by a thin film process, the noise filter part may be formed with a lead pattern and a plating lead line so as to be connected to the coil pattern when the coil pattern of the lowermost layer is formed, The via hole can be filled by an electroplating process using the lower coil pattern as a seed by making it possible to receive power. Therefore, compared with the conventional method in which a seed layer and a metal layer are formed to fill a via hole, the seed layer formation step for burial hole is not performed, thereby reducing the number of processes and time and improving productivity.

1 is a perspective view of a circuit protection device according to an embodiment of the present invention;
FIGS. 2 and 3 are cross-sectional views taken along lines AA 'and BB' of FIG. 1;
4 is an exploded perspective view of an ESD protection portion of a circuit protection device according to an embodiment of the present invention.
5 is a schematic diagram of a noise filter portion of a circuit protection device according to an embodiment of the present invention.
6 to 12 are sectional views sequentially taken along line AA 'of FIG. 1 to explain a method of manufacturing a circuit protection device according to an embodiment of the present invention.
13 is a sectional view of a circuit protection device according to another embodiment of the present invention.
14 is a schematic view of an ESD protection portion of a circuit protection device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely.

FIG. 1 is a perspective view of a circuit protection device according to an embodiment of the present invention, and FIGS. 2 and 3 are sectional views taken along lines A-A 'and B-B' of FIG. FIG. 4 is an exploded perspective view of an ESD protection unit of a circuit protection device according to an embodiment of the present invention, and FIG. 5 is a schematic view of a noise filter unit of a circuit protection device according to an embodiment of the present invention.

Referring to FIGS. 1, 2 and 3, a circuit protection device according to an embodiment of the present invention includes a substrate 100, an ESD protection unit 200 formed on the substrate 100, an ESD protection unit 200 And an external electrode 400 formed on an outer surface of the ESD protection unit 200 and the noise filter unit 300 to be connected to the ESD protection unit 200 and the noise filter unit 300. The noise filter unit 300 may further include a magnetic layer 500 formed on the noise filter unit 300. The ESD protection part 200 and the noise filter part 300 are provided with an insulating material for insulating the upper and lower conductive materials. Hereinafter, the insulating material of the ESD protection part 200 is expressed as an insulating layer, The insulating material of the noise filter unit 300 is expressed as an insulating film.

The substrate 100 may be an insulating substrate, for example, a substrate of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), glass, quartz, or ferrite have. The substrate 100 may have a substantially rectangular shape with a predetermined thickness. That is, the substrate 100 may be provided with two long sides whose planar shapes are opposed to each other and a rectangle where two short sides opposite to each other are provided between the long sides.

The ESD protection unit 200 is formed on the substrate 100 and discharges a voltage higher than a predetermined voltage applied through a signal input terminal including a power supply terminal. For example, the ESD protection unit 200 discharges an excessive voltage such as static electricity to the ground terminal. 2 and 3, the ESD protection unit 200 includes a first internal electrode 210 formed on a substrate 100 and a second internal electrode 210 formed on the substrate 100 including the first internal electrode 210. [ An ESD protection layer 230 formed on a predetermined region of the insulating layer 220 and a second internal electrode 220 formed on the insulating layer 220 and formed at least partially on the ESD protection layer 230. [ (240). The first internal electrode 210 is connected to the ground terminal through the first external electrode 410 and the second internal electrode 240 is connected to the signal input terminal through the second external electrode 420, And discharges a voltage equal to or higher than a predetermined voltage, such as static electricity, The ESD protection unit 200 may be formed by a thick film process or a thin film process. For example, the ESD protection part 200 may be formed by a thick film process in which at least one layer, for example, an insulating layer 220 is formed to a thickness of several microns to several hundreds of microns, and the insulating layer 220 is formed of a layer having a thickness of several hundreds nm to several tens of microns As shown in FIG. That is, the thick film process is formed thicker than the thin film process. At this time, in the case of a thick film process, a sheet having a predetermined thickness is formed on the substrate 100 to form an insulating layer 220. In the case of a thin film process, an insulating material is deposited or coated on the substrate 100 to form an insulating layer 200, Can be formed. In the case of the conductive layer, the thick film process can be formed by a printing method, and the thin film process can be formed by vapor deposition, coating, coating, or the like. A detailed description of this ESD protection portion will be described later with reference to FIGS. 2 and 3. FIG.

The noise filter unit 300 is formed on the ESD protection unit 200 and functions to block high frequency noise. The noise filter unit 300 may include a common mode noise filter. The noise filter unit 300 may include a plurality of insulating films 311, 312, 313 and 310, a plurality of coil patterns 321 and 322 and a plurality of extraction patterns 331 and 332 have. For example, a first coil pattern 321 and a first extraction pattern 331 are formed on a first insulation film 311, a second insulation film 312 is formed on the first coil pattern 321, a second insulation film 312, A second coil pattern 322 and a second extraction pattern 332 are formed on the first insulating film 313 and a third insulating film 313 is formed thereon. That is, a plurality of insulating films 310 each having the coil pattern 320 and the lead pattern 330 formed thereon may be stacked to form the noise filter portion 300. The noise filter unit 300 may be formed by a thin film method. For example, after the insulating layer 310 is formed, the insulating layer 310 is patterned in a spiral shape and a linear shape, and a plating process is performed to form the coil pattern 320 and the extraction pattern 310 on the patterned insulating layer 310. [ (330) can be formed. Meanwhile, one coil pattern 320 may be formed on the insulating layer 310, and two or more coil patterns 320 may be formed. For example, as shown in FIG. 5, between the first and second coil patterns 321a and 321b rotating in one direction, the second and third coil patterns 321b and 321b, which are spaced apart from each other by a predetermined distance and rotate in the same direction, 322b may be formed. The 1a and 1b coil patterns 321a and 321b are connected to the 1a and 1b extraction patterns 331a and 331b exposed in different directions and the 2a and 2b coil patterns 322a and 322b And may be connected to the 2a and 2b extraction patterns 332a and 332b exposed in different directions. The lead patterns 331 and 332 may be drawn in the edge direction of the insulating film 310 and connected to the external electrode 400. [ That is, the first and second coil patterns 321 and 322 may be exposed to different regions in the same direction by the extraction patterns 331 and 332 and may be connected to the second external electrode 420. The lead pattern 330 contacting the external electrode 400 may be formed to have the same width as the coil pattern 320 or may have a width larger than that of the coil pattern 320. The upper and lower coil patterns 320 are connected to each other. Vias 340a and 340b are formed at the center of the upper coil patterns 322a and 322b to connect with the lower coil patterns 321a and 321b. That is, the conductive material is buried in the via formed to penetrate the insulating film 312 to connect the lower and upper coil patterns. The insulating layer 310 may be formed of any one of polyimide, epoxy resin, benzocyclobutene (BCB), and other polymers. The coil pattern 320 and the lead pattern 330 may be formed of at least one of Ag, Pd, Al, Cr, Ni, Ti, Au, Cu, Pt or an alloy thereof.

The external electrodes 410, 420 and 400 are formed on the outside of the device to connect the internal electrodes 210 and 240 of the ESD protection unit 200 and the coil pattern 320 of the noise filter unit 300. The external electrode 400 includes first external electrodes 411 and 412 and 410 connected to the first internal electrode 210 of the ESD protection unit 200 and connected to the ground terminal, 2 internal electrodes 240 and second external electrodes 421, 422, 423, 424, 420 connected to the signal input terminal and connected to the extraction pattern 330 of the noise filter unit 300. Here, the first outer electrodes 410 may be formed on two surfaces facing each other, and the second outer electrodes 420 may be formed on two mutually opposing surfaces perpendicular to the first outer electrodes 410. Four or more second external electrodes 420 may be formed depending on the number of the second internal electrodes 240 and the coil patterns 320 exposed to the sides of the device. In this case, Or may be formed in the edge region as shown in Fig. The external electrode 400 may be formed at the same time when the ESD protection unit 200 and the noise filter unit 300 are formed. That is, the first outer electrode 410 is formed to have a certain thickness to be connected to the first inner electrode 210 when the first inner electrode 210 of the ESD protection unit 200 is formed, and the first outer electrode 410 is formed by a plating process It can be grown. The second external electrode 420 is formed to have a certain thickness when the second internal electrode 240 of the ESD protection unit 200 is formed and the coil pattern 320 and the extraction pattern 330 of the noise filter unit 300 The second outer electrode 420 may be partially grown to be connected to the second outer electrode 420 when the second outer electrode 420 is formed by the plating process.

The magnetic layer 500 may be formed of an insulating material containing a magnetic material. The insulating material may be selected from polyimide, epoxy resin, benzocyclobutene, and other polymers, and the magnetic material may be mixed in a powder state. At this time, Fe, Ni-Zn-based, Fe-Ni-Zn-Cu-based materials can be used as the magnetic material. The magnetic layer 500 may contain 60 to 97% of the magnetic material powder and 3 to 40% of the polymer. That is, when the magnetic layer 500 to which the magnetic substance powder is added is 100 wt%, the magnetic substance powder may be contained in an amount of 60 wt% to 97 wt% and the polymer may be contained in an amount of 3 wt% to 40 wt%.

The ESD protection unit 200 according to an embodiment of the present invention will be described with reference to FIGS. 2, 3, and 4. FIG.

The first internal electrode 210 is formed on a predetermined region of the substrate 100. The first internal electrode 210 may be formed in the direction of the short axis of the substrate 100, for example. That is, the first internal electrode 210 may be formed in a straight line shape having a predetermined width from a central portion of one long side of the substrate 100 to a middle portion of another long side. In addition, the first internal electrode 210 is connected to the first external electrode 410 formed to be exposed at one long side and the other long side. The first inner electrode 210 and the first outer electrode 410 may be formed by the same process. The first inner electrode 210 and the first inner electrode 210 may be connected to the first outer electrode 410, . The first internal electrode 210 may be formed of a conductive material such as Ag, Pd, Al, Cr, Ni, Ti, Au, Cu, Pt or an alloy thereof. The first internal electrode 210 may be formed by screen printing using a conductive paste, or may be formed by a sputtering method, an evaporation method, a sol-gel coating method, or the like.

The insulating layer 220 may have a predetermined thickness on the substrate 100 on which the first internal electrode 210 is formed. The insulating layer 220 may be formed of a composition including Al 2 O 3 , glass frit, and the like. That is, the insulating layer 220 may be formed of a ceramic material, and the ceramic material may be formed on the substrate 100 to have a predetermined thickness, for example, a sheet shape of several μm to several hundreds of μm thick. The insulating layer 220 may be formed by mixing a magnetic material in the above composition. For example, magnetic materials such as ferrite, Ni-based, Ni-Zn-based, and Ni-Zn-Cu-based can be mixed. In addition, the insulating layer 220 may have an opening in one region, and the opening may be formed to expose the first internal electrode 210. For example, the opening may be formed to have the same width as the width of the first internal electrode 210 to expose the central portion of the first internal electrode 210.

The ESD protection layer 230 may be formed in a predetermined region in the insulating layer 220. That is, the ESD protection layer 230 may be formed to fill the opening of the insulating layer 220. In addition, the ESD protection layer 230 may be formed to be connected to the first and second internal electrodes 210 and 240. That is, an ESD protection layer 230 is formed to fill an opening formed in a predetermined region of the insulating layer 220 such that at least a portion of the first internal electrode 210 is exposed, A part of the electrode 240 may be formed. The ESD protection layer 230 may be formed of an ESD protection material such as RuO 2 , Pt, Pd, Ag, Au, Ni, Cr, or the like in an organic material such as polyvinyl alcohol (PVA) or polyvinyl butyral , W, and the like may be mixed with at least one conductive material. The ESD protection material may be formed by further mixing a varistor material such as ZnO or an insulating ceramic material such as Al 2 O 3 to the mixed material. Therefore, the ESD protection layer 230 exists in a state where the conductive material and the insulating material are mixed at a predetermined ratio. That is, conductive particles exist between the insulating materials. Therefore, when a voltage less than a predetermined voltage is applied through the second internal electrode 240, the ESD protection layer 230 is maintained in an insulated state and a voltage higher than a predetermined voltage is applied through the second internal electrode 240 A conductive path is formed between the conductive particles to cause a discharge to the ground terminal through the first internal electrode 210.

The second internal electrode 240 may be formed on a predetermined region of the insulating layer 220, and at least a portion of the second internal electrode 240 may be formed on the ESD protection layer 230. Here, the second internal electrode 240 may be formed in a direction orthogonal to the first internal electrode 210. That is, the second internal electrode 240 may be formed in a straight line shape having a predetermined width from the center of one side of the substrate 100 to the middle of the other side. In addition, the second internal electrode 240 may be formed to be exposed in at least two regions according to the number of coil patterns of the noise filter unit 300 and the like. For example, as shown in FIG. 4, the second internal electrode 240 may be formed diagonally in the four corners of the insulating layer 220, and may be formed on the ESD protection layer 230. In other words, the second internal electrode 240 has first and second edge directions opposite to each other on the ESD protection layer 230, and third and fourth edge directions opposite to the first and second edges, . Here, the second outer electrode 420 may be formed at four corners and connected to the second inner electrode 240. Meanwhile, the second internal electrode 240 may be formed of the same material and the same method as the first internal electrode 210. In other words, it may be formed of at least one of Ag, Pd, Al, Cr, Ni, Ti, Au, Cu, Pt, or an alloy thereof and may be formed using a screen printing method, a sputtering method, have.

As described above, the circuit protection device according to one embodiment of the present invention may be formed by stacking the ESD protection unit 200 and the noise filter unit 300. By integrating the ESD protection unit 200 and the noise filter unit 300 in one device, it is possible to simultaneously perform noise removal as well as ESD removal using one device. Therefore, compared to the conventional one using two or more separate devices to protect the common mode noise and ESD, the device can be manufactured in a single chip and miniaturized. Therefore, the size of the electronic device can be prevented from increasing, the mounting area can be drastically reduced, Distortion of the input / output signal can be prevented by using the device, and the reliability of the electronic device can be improved.

Meanwhile, the circuit protection device according to an embodiment of the present invention can form the ESD protection part 200 by the thick film process and the noise filter part 300 by the thin film process. That is, since the noise filter unit 300 formed by the thin film process is vulnerable to heat during the thick film process and the coil pattern 320 and the lead pattern 330 may be damaged, the ESD protection unit 200 is formed by a thick film process The noise filter unit 300 can be formed by a back-film process. The thick film process forms a layer thicker than the thin film process. For example, the thick film process forms a layer with a thickness of several microns to several hundreds of microns, and the thin film process forms a film with a thickness of several nm to several tens of microns. A method of manufacturing a circuit protection device according to an embodiment of the present invention will now be described with reference to FIGS. 6 to 11, which are sequentially taken along line A-A 'of FIG.

Referring to FIG. 6, an ESD protection unit 200 is formed on a substrate 100. That is, after the first internal electrode 210 is formed on the substrate 100, an insulating layer 220 having an opening exposing a predetermined region of the first internal electrode 210 is formed on the insulating layer 220, The ESD protection layer 230 is formed to fill the opening of the ESD protection layer 230 and the second internal electrode 240 is formed to partially contact the ESD protection layer 230 on the insulation layer 220. A portion of the first outer electrode (not shown) is formed to be connected to the first inner electrode 210 when the first inner electrode 210 is formed, and a portion of the second outer electrode 421a, 423a Is formed. The substrate 100 is provided in a rectangular planar shape having a predetermined thickness and may be formed of a material such as aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), glass, quartz or ferrite, An insulating substrate such as a material can be used. The first internal electrode 210 may be formed in a straight line shape having a predetermined width from the center of the long side to the center of the other long side of the substrate 100 along the short side direction of the substrate 100. For example, Ag, Pd, Al, Sputtering, evaporation, sol-gel coating or the like using at least one of Cr, Ni, Ti, Au, Cu, Pt, and alloys thereof. The insulating layer 220 is formed to have a predetermined thickness on the substrate 100 on which the first internal electrode 210 is formed and an opening through which the center of the first internal electrode 210 is exposed is formed. The insulating layer 220 may be formed of a composition including Al 2 O 3 , glass frit or the like, that is, a ceramic material, and the magnetic material may be mixed with the composition. The ESD protection layer 230 is formed to fill the opening of the insulating layer 220. The ESD protection layer 230 may be formed of an organic material such as PVA (polyvinyl alcohol) or PVB (polyvinyl butyral), RuO 2 , Pt, Pd, Ag, Au, W and the like may be mixed with at least one electroconductive material. The second internal electrode 240 may be formed in a straight line shape having a predetermined width from the center of one side of the insulating layer 220 to the center of the other side of the insulating layer 220 so as to be orthogonal to the first internal electrode 210. In addition, the second internal electrode 240 may be formed to be exposed in at least two regions according to the number of coil patterns of the noise filter unit 300 and the like. The second internal electrode 240 may be formed of the same material and the same method as the first internal electrode 210. Meanwhile, when a portion of the first external electrode (not shown) and a portion of the second external electrode 421a and 423a are formed together with the first and second internal electrodes 210 and 240, a plating lead line is formed . That is, a plurality of plating lead lines may be formed so as to be separated from each other by a predetermined distance in one direction and the other direction, and a unit device may be formed inside the plating lead line. The plating lead line is connected to the first and second outer electrodes, and the power supplied through the plating lead line can be transmitted to the first and second outer electrodes. Therefore, the plating lead-in wire supplies power to enable the first and second outer electrodes of the lower layer to be used as the seed layer when electroplating to form the noise filter portion thereafter. After the ESD protection part 200 is formed on the substrate 100, the ESD protection part 200 may be fired at a temperature of, for example, 600 ° C to 1000 ° C. That is, the ESD protection layer 230 in which the conductive material is mixed with the organic material should be fired at a temperature of, for example, 600 ° C. to 1000 ° C. to improve the characteristics, and at such a firing temperature, the first and second internal electrodes 210, The insulating layer 220 is formed using a ceramic material.

Referring to FIG. 7, a first insulating layer 311 is formed on an ESD protection portion 200, a first insulating layer 311 is patterned to expose second external electrodes 421a and 423a below the first insulating layer 311, A first seed film 351 is formed on one insulating film 311. The first insulating layer 311 may be formed by depositing or applying a polymer material. At least one of Ag, Pd, Al, Cr, Ni, Ti, Au, Cu, Pt, or an alloy thereof may be selected as the first seed film 351. Next, a first photoresist layer 361 is formed on the first seed layer 351, and then a photolithography process and a development process using a predetermined mask are performed to pattern the first photoresist layer 361. The first photoresist layer 361 may be formed, for example, in the form of a coil pattern and a lead-out pattern, and may be patterned to have an external electrode. That is, the first photoresist layer 361 may be patterned such that the coil pattern formation region, the extraction pattern region, and the external electrode formation region are removed and the remaining region remains. Here, since a plurality of plating lead-in lines may be provided so as to be spaced apart from each other by a predetermined distance in one direction and the other direction, the coil pattern forming region may be provided in a spiral shape, for example, The lead pattern formation region formed at the end of the coil pattern formation region, i.e., at the pattern end of the spiral pattern, may be formed to be connected to the external electrode formation region. The lead pattern is connected to the external electrode to apply driving power to the coil pattern of the unit circuit protection element and apply power for electroplating when the coil pattern is formed. Also, the plating lead line is connected to the external electrode and the lead pattern, and the power source supplied through the plating lead line can be transmitted to the coil pattern through the lead pattern. Therefore, the plating lead-in wire supplies power to the lower layer coil pattern so that the lower layer coil pattern is used as the seed layer during the electroplating to form the coil pattern. That is, power may be supplied through a plating lead line in electroplating to fill a via hole for connecting the lower layer coil pattern and the upper layer coil pattern, so that the lower layer coil pattern may be used as the seed layer. Subsequently, an electroplating process is performed to grow the first metal film 371. The first metal film 371 is grown from the first seed film 361 and may be formed along the shape of the patterned first photoresist film 351. That is, the first metal film 371 is grown from the first seed film 331 exposed by the patterned first photoresist film 351, and the spiral coil pattern is formed along the pattern shape of the first photoresist film 351 An external electrode in a linear shape, and a lead-out pattern between the coil pattern and the external electrode can be formed. Here, the first metal film 371 may be formed of at least one of Ag, Pd, Al, Cr, Ni, Ti, Au, Cu, Pt or an alloy thereof. That is, the first metal film 371 may be formed of the same material as the first seed film 361.

Referring to FIG. 8, the first metal film 371 is formed by an electroplating process, the first photoresist layer 361 is removed, and the first seed layer 351 exposed by the first metal layer 371 The first insulating film 311 is exposed. Thus, the first coil patterns 321a and 321b, the lead pattern 331, a part of the first outer electrode (not shown) and the portions 421b and 423b of the second outer electrode are formed by the first metal film 371 . For example, the second external electrodes 421b and 423b are formed at four corners of the unit element region, the first coil patterns 321a and 321b are formed at the center of the unit element region, 1 coil pattern 321a and is connected to the second external electrodes 421b and 423b.

9, a second insulating layer 312 is formed on the first metal layer 371 and then a predetermined region of the second insulating layer 312 is etched by a predetermined photolithography and etching process to form a first metal layer 371 A via hole exposing a predetermined region of the first coil pattern 321, the first outer electrode (not shown) and the second outer electrode 421b, 423b is formed. Here, the second insulating layer 312 may be formed by vapor deposition or coating using the same material as the first insulating layer 311. The first coil pattern 321 may be exposed in any region, but the central region of the first coil pattern 321 may be exposed. Then, a first via plug 381 for filling the via hole is formed. The first via plug 381 may be formed by electroplating with the first metal film 321 exposed through the via hole as a seed. This is possible because the first metal film 321 is connected to the plating lead line. That is, since the power for electroplating is applied to the first metal film 321 through the plating lead line, the first via plug 381 is formed from the first metal film 321.

10, a second seed layer 352 is formed on the second insulating layer 312, a second photoresist layer 362 is formed on the second photoresist layer 362, and then the second photoresist layer 362 is exposed and developed for patterning . Here, the second seed film 352 may be formed of the same material as the first seed film 351. The second photoresist layer 362 is patterned along the shape of the first metal layer 371 formed of a coil pattern, a lead pattern, and an external electrode. That is, the second photoresist layer 362 exposes a region where the first external electrode and the second external electrodes 421b and 423b and the first coil patterns 321a and 321b are formed and is exposed in a direction different from the first drawing pattern 331 So that the second extraction pattern formation region is exposed. Then, the second metal film 322 is grown from the second seed film 352 exposed by the second photoresist film 362. That is, the second metal film 322 can be formed by electroplating from the exposed second seed film 352.

Referring to FIG. 11, the second photoresist layer 362 is removed, and the second seed layer 352 exposed by the second metal layer 322 is removed to expose the second insulation layer 312. The second coil patterns 322a and 322b are formed by the second metal film 372 in the same shape as the first coil patterns 321a and 321b formed by the first metal film 371. [ Of course, the first coil patterns 321a and 321b on the lower side and the second coil patterns 322a and 322b on the upper side may have different shapes. For example, the first coil patterns 321a and 321b may be formed to rotate counterclockwise, and the second coil patterns 322a and 322b may be formed to rotate clockwise. In addition, a part of the first external electrode and a part 421c and 423c of the second external electrode are formed.

Referring to FIG. 12, a coil pattern is formed by a predetermined number of layers, and a third insulating layer 313 is formed on the coil pattern. The external electrodes 421 and 423 are grown to a predetermined height by patterning the insulating layer 313 so as to expose the external electrodes and then performing an electroplating process. After the magnetic layer 500 is formed on the external electrodes 421 and 423 and the insulating layer 313, the magnetic layer 500 is polished so that the external electrodes 421 and 423_ are exposed. The ESD protection unit 200 and the noise filter unit 300 are stacked on the substrate 100. The ESD protection unit 200 and the noise filter unit 300 are stacked on the substrate 100, A first outer electrode 410 connected to the first inner electrode 210 of the ESD protection unit 200 and a second inner electrode 240 and a noise filter unit 300 of the ESD protection unit 200, And a second external electrode 420 connected to the pattern 330 is formed.

As described above, in the method of fabricating the circuit protection device according to the embodiment of the present invention, the noise filter unit 300 is formed by the thin film process on the ESD protection unit 200 formed by the thick film process so that the ESD protection device and the common mode noise The filter can be implemented in a single chip. In addition, the lead pattern and the external electrode may be formed so as to be connected to the first coil pattern in the formation of the first coil pattern as the lowermost layer, and the power may be supplied through the plating lead-in line, thereby filling the via hole by an electroplating process using the lower coil pattern as a seed The via plug 381 can be formed and an external electrode can be formed. Therefore, the seed layer is not required to be formed every time the via plug 381 is formed, and since the external electrode is formed at the same time when the internal electrode and the coil pattern are formed, external electrodes need not be formed in a separate process. The productivity can be improved.

Meanwhile, the circuit protection device according to an embodiment of the present invention includes a ESD protection unit 200 formed on a substrate 100 by a thick film process, a thin film process is performed on the ESD protection unit 200, and a noise filter unit 300 is formed Respectively. However, the ESD protection unit 200 may be formed by a thick film process, the noise filter unit 300 may be formed by a thin film process, and then they may be bonded. That is, the noise filter unit 300 may be bonded to the ESD protection unit 200 using an adhesive so that the external electrodes 400 are connected. As the adhesive, a polymer-based adhesive can be used. The ESD protection unit 200 and the noise filter unit 300 may be fabricated separately and bonded together to reduce the cost. That is, if the noise filter unit 300 is formed in a continuous process on the ESD protection unit 200, for example, if a defect occurs during the process of forming the noise filter unit 300, the ESD protection unit 200 must be disposed of In case of manufacturing separately, only the defective part can be discarded, so the cost can be reduced.

In addition, the ESD protection part 200 is formed by a thick film process and the common mode noise filter part 300 is formed by a thin film process on the circuit protection device and the fabrication method thereof according to an embodiment of the present invention. That is, since the ESD protection layer 230 of the ESD protection unit 200 mixes the organic material and the conductive material and requires a high-temperature firing process to improve the characteristics thereof, the ESD protection unit 200 is formed by a thick film process, The ESD protection unit 200 is formed on the underside of the noise filter unit 300. However, the ESD protection unit 200 may be formed by a thin film process, and may be formed on or above the noise filter unit 300. For example, as shown in FIG. 13, the first coil pattern 321, the ESD protection portion 200, and the second coil pattern 322 may be laminated to fabricate a circuit protection device. That is, a first insulating layer 311, a first coil pattern 321 and a second insulating layer 312 are formed on a substrate 100, an ESD protection portion 200 is formed on a second insulating layer 312 The second coil pattern 322 and the third insulating film 313 may be formed on the ESD protection portion 200. [ The ESD protection unit 200 includes a first internal electrode 210 and an ESD protection layer 230 formed on the second insulating layer 312 and an insulating layer 220 and a second internal electrode 240 ). That is, the first internal electrode 210 and the ESD protection layer 230 may be formed on the same plane. As shown in FIG. 14, the first internal electrodes 210 are formed with a predetermined spacing therebetween, An ESD protection layer 230 may be formed. Also, the first internal electrodes 210 may be spaced apart from each other in the vertical direction, and an ESD protection layer 230 may be formed therebetween. The first coil pattern 312 and the second coil pattern 322 are electrically connected to the second insulation layer 312 and the insulation layer 312 so as not to contact the first and second internal electrodes 210 and 240 of the ESD protection unit 200, And may be connected via a via plug formed in a predetermined region of the layer 220. Here, the ESD protection layer 230 may be formed by mixing a conductive material with the polymer in order to form the ESD protection unit 200 in the thin film process. That is, an ESD protection material obtained by mixing at least one conductive material selected from RuO 2 , Pt, Pd, Ag, Au, Ni, Cr, and W with any one of polyimide, epoxy resin, benzocyclobutene, The ESD protection layer 230 may be formed. When the conductive material is mixed with the polymer, the ESD protection layer 230 can be improved in characteristics by performing a low-temperature process at about 100 ° C to 400 ° C.

Although the technical idea of the present invention has been specifically described according to the above embodiments, it should be noted that the above embodiments are for explanation purposes only and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: substrate 200: ESD protection part
300: Noise filter unit 400: External electrode
500: magnetic layer

Claims (15)

Forming an ESD protection portion on the substrate; And
And forming a noise filter portion including a plurality of coil patterns provided in the vertical and horizontal directions on the ESD protection portion,
Wherein the ESD protection unit is formed by a thick film process or a thin film process, the noise filter unit is formed by a thin film process,
Wherein forming the noise filter portion comprises:
Forming a plating lead line and a first coil pattern connected to the plating lead line,
Forming an insulating film on the first coil pattern and then forming a via hole exposing the first coil pattern;
Forming a via plug for filling the via hole from the first coil pattern by applying power through the plating lead line;
And forming a second coil pattern connected to the via plug on the insulating film.
The ESD protection unit of claim 1, wherein the ESD protection unit includes first and second internal electrodes spaced apart from each other in the vertical direction, and an ESD protection layer formed in contact with the first and second internal electrodes,
Wherein the noise filter portion further includes a lead pattern connected to the coil pattern and exposed to the outside.
The circuit according to claim 2, further comprising: a first external electrode connected to the first internal electrode and connected to the ground terminal; and a second external electrode connected to the second internal electrode and the lead pattern and connected to the signal input terminal. A method of manufacturing a protection device.
[4] The method of claim 3, wherein the first outer electrode is partially formed at the same time as the first inner electrode, and the second outer electrode is partially formed at the same time as the second inner electrode, Wherein the pattern is formed simultaneously with the formation of the pattern and the lead pattern.
5. The method of claim 4, wherein the step of fabricating the noise filter portion comprises:
Forming a first portion of a second external electrode connected to the plating lead line;
Forming a via hole in the insulating layer to expose a first portion of the second external electrode;
Forming a via plug to fill the via hole from the first portion of the second external electrode by applying power through the plating lead line; And
And forming a second portion of a second external electrode connected to the via plug on the insulating layer.
The circuit protection device according to claim 5, wherein at least one coil pattern is stacked on the second coil pattern in the vertical direction and a plurality of coil patterns stacked in the vertical direction are arranged in a horizontal direction in a region between the plating lead- / RTI >
7. The method of claim 6, wherein the noise filter portion is formed in contact with the ESD protection portion, or formed separately from the ESD protection portion and bonded to the ESD protection portion.
7. The method of claim 6, wherein the ESD protection portion is formed between the coil patterns in the vertical direction.
The method of claim 2, wherein the ESD protection layer formed by the thick film process comprises at least one conductive material including RuO 2 , Pt, Pd, Ag, Au, Ni, Wherein the first electrode is formed of a material mixed with the first electrode.
[12] The method of claim 9, further comprising performing a heat treatment process at 600 [deg.] C to 1000 [deg.] C after forming the ESD protection layer.
The method according to claim 2, wherein the ESD protective layer formed by the thin film process is a polyimide, an epoxy resin, benzo cycloalkyl portion tenreul comprises at least one of the polymer RuO 2, Pt, Pd, Ag, Au, Ni, Cr, W, which And at least one conductive material is mixed.
[12] The method of claim 11, further comprising performing a heat treatment process at 100 [deg.] C to 400 [deg.] C after forming the ESD protection layer.
A circuit protection device manufactured by any one of claims 1 to 12,
An ESD protection part and a noise filter part laminated on a substrate, and an external electrode connected to the ESD protection part and the noise filter part,
The ESD protection unit includes first and second internal electrodes spaced apart from each other in the vertical direction, and an ESD protection layer formed in contact with the first and second internal electrodes,
Wherein the noise filter portion includes a plurality of coil patterns and an extraction pattern connected to the coil pattern and exposed to the outside,
Wherein the external electrode includes a first external electrode connected to the first internal electrode and connected to a ground terminal, and a second external electrode connected to the second internal electrode and the lead pattern and connected to the signal input terminal, .
14. The circuit protection element of claim 13, wherein the first internal electrodes are spaced apart from each other by a predetermined distance, and the ESD protection layer is formed between the first internal electrodes.
The circuit protection element according to claim 13, wherein the external electrode is formed on the side surface and the upper surface of the laminate from the substrate.
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