KR101789916B1 - Large size electrostatic manufacturing method - Google Patents

Large size electrostatic manufacturing method Download PDF

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KR101789916B1
KR101789916B1 KR1020160026956A KR20160026956A KR101789916B1 KR 101789916 B1 KR101789916 B1 KR 101789916B1 KR 1020160026956 A KR1020160026956 A KR 1020160026956A KR 20160026956 A KR20160026956 A KR 20160026956A KR 101789916 B1 KR101789916 B1 KR 101789916B1
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layer
acrylate
dielectric layer
meth
al2o3
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KR1020160026956A
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Korean (ko)
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KR20170104227A (en
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김성호
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김성호
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to a method of manufacturing a large area electrostatic chuck, and more particularly, to a method of manufacturing a large area electrostatic chuck, A first step in which one or more than one of the group consisting of CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite and AlF3 are mixed and formed, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN A second step of forming a dielectric layer in which upper and lower portions are formed in a plate shape by mixing and forming one or more kinds of materials selected from the group consisting of SiO2, SiC, YAG, Mullite, and AlF3; A third step of forming a pattern layer in a concave-convex shape protruding in accordance with a pattern set on the upper surface of the dielectric layer, Molybdenum, titanium, and silver, which are conductive materials, for covering the pattern layer formed on the upper surface of the dielectric layer and the upper surface of the dielectric layer, A step of forming an electrode layer by spray coating; a step of polishing an upper portion of the electrode layer to expose an upper portion of the pattern layer, and removing only a pattern layer from an upper portion of the dielectric layer, AlN, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, and AlN to cover the electrode layer remaining on the upper surface of the dielectric layer and the upper surface of the dielectric layer. A spray coating powder prepared by mixing one or more of the group consisting of TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, Forming an adhesive layer on the upper surface of the base by spraying an adhesive paste resin composition for bonding on the upper surface of the base, A ninth step of bonding the base and the dielectric layer with the dielectric layer facing the upper surface of the adhesive layer so that the upper surface of the dielectric layer is opposed to the upper surface of the adhesive layer and a connector for supplying a voltage to the electrode layer is connected.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a large-

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a large area electrostatic chuck, and more particularly, to a method of manufacturing a large area electrostatic chuck by forming a dielectric layer of a large area electrostatic chuck used for adsorbing adsorbates such as a large- B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, One or more of the group consisting of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, A dielectric layer is formed separately from the base, and a dielectric layer is bonded and fixed to the base by an adhesive layer formed by applying a paste resin composition to form pores in the dielectric layer To a method of manufacturing an electrostatic chuck having a large area, which is capable of reducing the arcing while improving the withstand voltage characteristic.

BACKGROUND ART [0002] Recent technological trends such as the enlargement of wafers or glass substrates, the tendency of manufacturing processes such as semiconductors and display panels, the high integration and ultrafine processing of circuits, and the plasma etching process are caused by the thin film deposition and etching processes, And the like.

Conventionally, a wafer or a glass substrate, which is a material to be processed, has been fixed by using a mechanical clamp or a vacuum chuck. However, electrostatic chucks using electrostatic force are used as core parts in recent semiconductor and display panel processing equipments Thereby fixing the wafer or the glass substrate.

The electrostatic chuck is characterized in that at least two dielectric layers are formed in a base material and an electrode is inserted between the dielectric layers, and an insulating layer and a dielectric layer are formed on the base material, When a direct current voltage is applied to an electrode having conductivity, an opposite polarity is generated on a wafer or a glass substrate to be processed according to polarization of a dielectric, so that a wafer or glass substrate and a dielectric substance And fixes the wafer or glass substrate to be processed by the generated electrostatic force.

The electrostatic chuck for chucking an object to be attracted by an electrostatic force includes a base member, a plurality of dielectric plate units assembled on one surface of the base member, each of which is provided with electrodes, And a coating layer filling a gap between the dielectric plate and the dielectric plate unit. The method of manufacturing an electrostatic chuck for adsorbing an object to be attracted by an electrostatic force comprises the steps of: performing a ceramic sintering process A step of assembling a plurality of dielectric plate units to one surface of the base member so as to be spaced apart from each other, and a plasma spraying step to fill a gap between the dielectric plate units, Characterized by comprising Technology is a known bar, as in Patent Publication No. 10-1109743 call.

However, the above-described technique is to form an electrostatic chuck by performing a ceramic sintering process and a plasma spraying process. Due to the characteristics of the ceramic sintering process and the plasma spray process, a large number of pores are generated in the dielectric material to cause an arcing phenomenon, There was a problem.

Accordingly, there is a need for a method of manufacturing a large-area electrostatic chuck which solves the above-described conventional problems.

Patent Registration No. 10-1109743

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the conventional art as described above, and it is an object of the present invention to provide a large area electrostatic chuck which is used for adsorbing a large- B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, TiO2, , Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite and AlF3. A dielectric layer is formed separately from the base, and the dielectric layer is bonded and fixed to the base by an adhesive layer formed by applying an adhesive paste resin composition to prevent pores from being generated in the dielectric layer To provide a large area of the electrostatic chuck method such that W improves a withstand voltage characteristic line, yet it is an object of arcing.

In order to achieve the above-mentioned object, the present invention provides a method of manufacturing a semiconductor device, comprising: forming a first electrode on a substrate, the first electrode being made of SiC, B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, A first step in which one or more than one of the group consisting of CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite and AlF3 are mixed and formed, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN A second step of forming a dielectric layer in which upper and lower portions are formed in a plate shape by mixing and forming one or more kinds of materials selected from the group consisting of SiO2, SiC, YAG, Mullite, and AlF3; A fourth step of forming a pattern layer in a concavo-convex shape protruding according to a pattern set on the upper surface of the dielectric layer, A powder for thermal spray coating comprising a mixture of one or more kinds selected from the group consisting of tungsten, molybdenum, titanium, and silver, which is a conductive material, to cover the pattern layer formed on the upper surface of the dielectric layer and the upper surface of the dielectric layer, A fifth step of polishing the upper portion of the electrode layer to expose the upper portion of the pattern layer and removing only the pattern layer from the upper portion of the dielectric layer while leaving the electrode layer so as to leave only the electrode layer on the upper portion of the dielectric layer; Al 2 O 3, Y 2 O 3, Al 2 O 3, Y 2 O 3, ZrO 2, AlC, TiN, AlN, and TiC , And at least one member selected from the group consisting of MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite and AlF3 is spray- A seventh step of forming an adhesive layer on the upper surface of the base by spraying an adhesive paste resin composition for bonding on the upper surface of the base, A step of connecting the base and the dielectric layer so that the upper surface of the dielectric layer is in contact with the upper surface of the dielectric layer on the upper surface of the dielectric layer, and a connector for supplying a voltage to the electrode layer is connected. ≪ / RTI >

The large-area electrostatic chuck manufacturing method according to the present invention has a large number of pores and a large amount of arcing due to the formation of a dielectric layer of a large-area electrostatic chuck, which is used for adsorbing adsorbates such as a large- B3C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, and Al2O3 / Y2O3 to improve the adsorptive power while eliminating the pores of large area electrostatic chucks. And at least one element selected from the group consisting of ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, And the dielectric layer is adhered and fixed to the base by an adhesive layer formed by applying the adhesive paste resin composition to prevent the generation of pores in the dielectric layer, And the withstand voltage characteristic of the dielectric layer is also improved.

1 is a flowchart of a method for manufacturing a large area electrostatic chuck of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1, a method for fabricating a large area electrostatic chuck according to the present invention includes forming a plurality of electrostatic chucks including SiC, B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, A base 10 formed by mixing one or more of the group consisting of MgO, CaO, CeO 2, TiO 2, BxCy, BN, SiO 2, SiC, YAG, Mullite and AlF 3, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN (AlN), Al2O3, Y2O3, ZrO2, Al2O3, Y2O3, ZrO2, A dielectric layer in which upper and lower portions are formed in a plate shape and mixed with one or more of the group consisting of TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, A third step S3 of processing the upper and lower surface flatness of the dielectric layer 20 to within 5 to 30 占 퐉; Protruding according to A fourth step S4 of forming a patterned layer 30 in an iron form and a patterning step of covering the pattern layer 30 formed on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20 with tungsten, (S5) of forming an electrode layer (40) by spray coating a powder for thermal spray coating comprising a mixture of one or more species selected from the group consisting of molybdenum, titanium, and silver, The upper part of the pattern layer 30 is exposed and the pattern layer 30 is removed from the upper part of the dielectric layer 20 while leaving the electrode layer 40 so that only the electrode layer 40 is formed on the dielectric layer 20 B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, and Si3N4 so as to surround the electrode layer 40 left on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20, In the group consisting of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, Or a mixture of two or more of the above materials is spray-coated to form an insulating layer 50 and the upper surface of the insulating layer 50 is processed to have a flatness of 5 to 30 μm or less (S8) for forming an adhesive layer (60) by applying an adhesive paste resin composition (62) for bonding to the upper surface of the base (10) A ninth step S9 of bonding the base 10 and the dielectric layer 20 with the dielectric layer 20 in contact with the upper surface of the insulating layer 50, (Step S10).

Al2O3, Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, Al2O3, Y2O3, Al2O3, Y2O3, ZrO2, AlC, TiN, AlN, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, SiC, YAG, Mullite, AlF3, and the upper and lower portions are formed in a plate shape (Step S1).

At this time, the base 10 is formed of a ceramic sintered body, and the upper surface of the base 10 is processed to have a flatness of 5 to 30 μm or less.

The flatness of the upper surface of the base 10 is preferably 5 to 30 μm or less, and when the flatness of the upper surface of the base 10 is 5 μm or less, When the flatness of the upper surface of the base 10 is made to be 30 占 퐉 or more, the flatness can not be uniformly formed, and the large-area electrostatic chuck 2 can be fixed to various flat panel members There is a problem that the adsorption force is lowered when the substrate is used for oxidation, vapor deposition, or etching of a large-area display substrate used for a plasma display panel or the like.

Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, TiO2, TiO2, TiO2, The dielectric layer 20 is formed by mixing one or more of the group consisting of BxCy, BN, SiO2, SiC, YAG, Mullite, and AlF3.

In addition, the upper and lower surface flatness of the dielectric layer 20 is processed within 5 to 30 占 퐉 (step S3)

At this time, the dielectric layer 20 is formed of the same ceramic material as the base 10, and the upper and lower surfaces of the dielectric layer 20 are processed to have a flatness of 5 to 30 μm or less.

The flatness of the upper and lower surfaces of the dielectric layer 20 is preferably 5 to 30 μm or less. When the flatness of the upper and lower surfaces of the dielectric layer 20 is 5 μm or less, When the flatness of the upper and lower surfaces of the dielectric layer 20 is made to be 30 占 퐉 or more, the flatness can not be uniformly formed, and the large-area electrostatic chuck 2 is fixed to various flat panel members There is a problem that the adsorption force is lowered when the substrate is used for oxidation, vapor deposition, or etching of a large-area display substrate used for a plasma display panel or the like.

Since the dielectric layer 20 is not formed on the upper surface of the base 10 as a spray coating but is formed of a ceramic sintered body and thus the pores generated by forming the dielectric layer 20 by spray coating in the related art are not generated, It is possible to prevent occurrence of arcing or deterioration of withstand voltage characteristic due to the above-mentioned problems.

The pattern layer 30 is formed in a concave-convex shape protruding in accordance with the pattern set on the upper surface of the dielectric layer 20 (step S4)

The pattern layer 30 may be formed by a silk screen printing method or an ink jet printing method. Alternatively, the pattern layer 30 may be formed in a concavo-convex shape protruding from the upper surface of the dielectric layer 20, Any method can be used.

On the other hand, the pattern layer 30 may be formed of an acrylic resin, hydroxyethyl methacrylate, butyl cellosolve, solvent naphtha, benzyl (meth) acrylate, methyl (meth) acrylate, ethyl (Meth) acrylate, isobutyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, cyclohexyl Acrylate, 2-hydroxyethyl (meth) acrylate, 2-phenoxyethyl (meth) acrylate, tetrahydroperfuryl (meth) acrylate, hydroxyethyl (Meth) acrylate, 4-hydroxybutyl (meth) acrylate, acyloctyloxy-2-hydroxypropyl (meth) acrylate, glycerol Methacrylate, 3- (Meth) acrylate, methoxytriethylene glycol (meth) acrylate, methoxytriethylene glycol (meth) acrylate, poly (ethylene glycol) methyl ether (Meth) acrylate, p-nonylphenoxypolyethylene glycol (meth) acrylate and p-nonylphenoxypolypropylene glycol (meth) acrylate, methyl ethyl ketone, methyl cellosolve, ethyl Ethylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 2-ethoxy Propanol, 2-methoxypropanol, 3-methoxybutanol, cyclohexanone, cyclopentanone, propylene glycol methyl ether Ethyl acetate, propyleneglycol ethyl ether acetate, 3-methoxybutyl acetate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, methyl cellosolve acetate, butyl acetate and dipropylene glycol monomethyl ether. And the pattern layer 30 is formed to have a thickness of 0.08 to 0.3 mm.

At this time, the pattern layer 30 is formed to compensate for the fact that a dense pattern and height, which is a disadvantage of the spray coating, can not be formed when the electrode layer 40 to be described later is formed by spray coating, By forming the pattern layer 30 at a predetermined interval and height by a silk screen printing method or an inkjet printing method in advance, except for a portion where the electrode layer 40 is to be spray-coated, And the pattern layer 30 is removed after the electrode layer 40 is formed.

Molybdenum, titanium, and silver, which are conductive materials, for covering the pattern layer 30 formed on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20, And spray coating the resultant powder for spray coating to form an electrode layer 40 (step S5)

The upper part of the electrode layer 40 is polished to expose the upper part of the pattern layer 30 and the pattern layer 30 is removed from the upper part of the dielectric layer 20 while leaving the electrode layer 40, So that only the electrode layer 40 is left in the upper part of the electrode layer 40. (Step S6)

The electrode layer 40 formed on the pattern layer 30 is removed by blasting, milling, shot peening, or the like. The electrode layer 40 is formed on the pattern layer 30, After the pattern layer 40 is removed, the operator strips off the pattern layer 30 which is easy to peel off, leaving only the electrode layer 40 on the top of the dielectric layer 20.

The thickness of the electrode layer 40 from which the pattern layer 30 is removed is preferably 0.08-0.3 mm. When the thickness of the electrode layer 40 is 0.08 mm or less, There is a problem that the resistance value is increased due to the porosity and other defects in the electrode layer 40 and the electrostatic attraction force is decreased as the resistance value is increased. When the thickness of the electrode layer 40 is 0.3 mm or more, There is a problem that the cost due to spray coating increases.

Al2O3, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, Al2O3, Y2O3, Y2O3, Y2O3, Y2O3, and Y2O3 to cover the electrode layer 40 remaining on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20. [ A powder for thermal spray coating comprising a mixture of at least one of AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, The insulating layer 50 is formed by spray coating and the flatness of the upper surface of the insulating layer 50 is processed to be 5 to 30 占 퐉 or less (Step S7)

When the thickness of the insulating layer 50 is 0.3 mm or less, the electrode layer 40 is insulated from the base 10, There is a problem that the dielectric strength between the base 10 and the electrode layer 40 is deteriorated even when the volume resistivity is low. When the thickness of the insulating layer 50 is 2 mm or more, And the ceramic powder for spray coating is added more than necessary to increase the production cost.

At this time, the insulation layer 50 is disposed such that the insulation layer 50 faces the upper side of the base 10, with the dielectric layer 20 processed to have a flatness of the upper surface of the insulation layer 50 within 5 to 30 μm.

An adhesive paste resin composition 62 for bonding is applied to the upper surface of the base 10 to form an adhesive layer 60. In operation S8,

In this case, the adhesive layer 60 comprises an adhesive paste resin composition 62 including a base resin and an additive, wherein the additive comprises 3 to 12 parts by weight of an inorganic filler per 100 parts by weight of the total composition, The filler is a mixture of a silica-based inorganic filler and a metal oxide-based inorganic filler having a larger weight, size, specific gravity and molecular weight than the silica-based inorganic filler, and the metal oxide based inorganic filler is at least one selected from the group consisting of antimony oxide, Based oxide, a beryllium-based oxide, and a titanium-based oxide, and the base resin contains epoxy.

The dielectric layer 20 is flipped over the upper surface of the adhesive layer 60 and the base 10 and the dielectric layer 20 are bonded to each other such that the upper surface of the insulating layer 50 is brought into contact with each other.

And a connector 70 for supplying a voltage to the electrode layer 40 is connected to the electrode layer 40. In operation S10,

At this time, the connector 70 transmits the high voltage supplied from the outside to the electrode layer 40, and one or a plurality of the connector 70 are connected to the electrode layer 40.

In addition, the connector 70 is preferably formed of a conductive material such as tungsten, molybdenum, or titanium, but any conductive material may be used.

The large-area electrostatic chuck according to the present invention is manufactured by forming the dielectric layer 20 of the large-area electrostatic chuck 2, which is used for adsorbing adsorbates such as a large-area display, SiC, B4C, Si3N4, TiB2 (Si3N4), Si3N4, Si3N4, Si3N4, Si3N4, and Si3N4 are formed to increase the attraction force while eliminating the pores of the large-area electrostatic chuck (2) , AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, The dielectric layer 20 is formed separately from the base 10 and the dielectric layer 20 is coated with the adhesive layer 60 formed by spraying the adhesive paste resin composition 62, (10), thereby fixing pores in the dielectric layer (20) It is prevented from being generated as soon arcing is reduced in addition to the advantage that the withstand voltage characteristics of the dielectric layer 20 is also enhanced.

2: large area electrostatic chuck 10: base
20: Dielectric layer 30: pattern layer
40: electrode layer 50: insulating layer
60: adhesive layer 62: adhesive paste resin composition
70: Connector

Claims (5)

SiC, B4C, Si3N4, TiB2, AlON, 2MgO, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, YAG, Mullite, and AlF3, and the upper and lower portions of the base 10 are formed in a plate shape;
Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, TiO2, Al2O3, TiO2, TiO2, (S2) in which a dielectric layer (20) is formed by mixing one or more of the group consisting of BxCy, BN, SiO2, SiC, YAG, Mullite and AlF3, ;
A third step (S3) of processing the upper and lower surface flatness of the dielectric layer 20 to within 5 to 30 占 퐉;
A fourth step (S4) of forming a pattern layer (30) in a concavo-convex shape protruding according to a pattern set on the upper surface of the dielectric layer (20);
Molybdenum, titanium, and silver, which are conductive materials, for covering the pattern layer 30 formed on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20, A fifth step (S5) of forming an electrode layer (40) by spray coating a powder for spray coating;
The upper part of the electrode layer 40 is polished to expose the upper part of the pattern layer 30 and the pattern layer 30 is removed from the upper part of the dielectric layer 20 while leaving the electrode layer 40, A sixth step (S6) of causing only the electrode layer (40) to remain.
Al2O3, 2Al2O3, 5SiO2, Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, Al2O3, Y2O3, Y2O3, Y2O3, Y2O3, and Y2O3 to cover the electrode layer 40 remaining on the upper surface of the dielectric layer 20 and the upper surface of the dielectric layer 20. [ A powder for thermal spray coating comprising a mixture of at least one of AlC, TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, BxCy, BN, SiO2, SiC, YAG, Mullite, A seventh step (S7) of forming the insulating layer (50) by spray coating and processing the flatness of the upper surface of the insulating layer (50) within 5 to 30 占 퐉;
An eighth step (S8) of forming an adhesive layer (60) by applying an adhesive paste resin composition (62) for bonding to an upper surface of the base (10);
A ninth step (S9) of bonding the base (10) and the dielectric layer (20) so that the upper surface of the insulating layer (50) faces each other by reversing the dielectric layer (20) on the upper surface of the adhesive layer (60);
(S10) connecting a connector (70) for supplying a voltage to the electrode layer (40). The method according to claim 1,
Wherein the pattern layer (30) is formed by a silk screen printing method or an ink jet printing method. The method according to claim 1,
The pattern layer 30 may be formed of a material such as acrylate resin, hydroxyethyl methacrylate, butyl cellosolve, solvent naphtha, benzyl (meth) acrylate, methyl (meth) acrylate, ethyl (meth) Acrylate, isobutyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, cyclohexyl Acrylate, 2-hydroxyethyl (meth) acrylate, 2-phenoxyethyl (meth) acrylate, tetrahydroperfuryl (meth) acrylate, hydroxyethyl (Meth) acrylate, glycerol (meth) acrylate, 2-methoxyethyl (meth) acrylate, 2-hydroxypropyl Acrylate, 3-methoxy (Meth) acrylate, methoxytriethylene glycol (meth) acrylate, ethoxydiethylene glycol (meth) acrylate, methoxytriethylene glycol (meth) acrylate, methoxytripropylene glycol (Meth) acrylate, p-nonylphenoxypolyethylene glycol (meth) acrylate and p-nonylphenoxypolypropylene glycol (meth) acrylate, methyl ethyl ketone, methyl cellosolve, ethyl cell Propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, 2-ethoxypropanol, diethylene glycol dimethyl ether, ethylene glycol dimethyl ether, , 2-methoxypropanol, 3-methoxybutanol, cyclohexanone, cyclopentanone, propylene glycol methyl ether Ethyl acetate, ethyl cellosolve acetate, methyl cellosolve acetate, butyl acetate and dipropyleneglycol monomethyl ether, in any of the group consisting of propyleneglycol ethyl ether acetate, propyleneglycol ethylether acetate, 3-methoxybutyl acetate, ethyl 3-ethoxypropionate, Wherein at least one of the first electrode and the second electrode is made of a mixture of two or more of them. The method according to claim 1,
Wherein the pattern layer (30) and the electrode layer (40) are formed to have a thickness of 0.08 to 0.3 mm, respectively. The method according to claim 1,
The adhesive layer 60 comprises an adhesive paste resin composition 62 comprising a base resin and an additive, wherein the additive comprises 3 to 12 parts by weight of an inorganic filler per 100 parts by weight of the total composition, , A silica-based inorganic filler, and a metal oxide-based inorganic filler having a larger weight, size, specific gravity and molecular weight than the silica-based inorganic filler, wherein the metal oxide based inorganic filler is at least one selected from the group consisting of antimony oxide, , A beryllium-based oxide, and a titanium-based oxide, and the base resin contains an epoxy.
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KR102034570B1 (en) * 2018-01-16 2019-10-21 주식회사 이에스티 Electrode pattern forming method for electrostatic chucks
CN114649252A (en) * 2022-03-17 2022-06-21 苏州众芯联电子材料有限公司 Manufacturing process of double-electrode electrostatic chuck for LCD/OLED panel equipment

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