KR101764292B1 - 6 Port RF Modulator and Management Method of the Same - Google Patents
6 Port RF Modulator and Management Method of the Same Download PDFInfo
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- KR101764292B1 KR101764292B1 KR1020160010546A KR20160010546A KR101764292B1 KR 101764292 B1 KR101764292 B1 KR 101764292B1 KR 1020160010546 A KR1020160010546 A KR 1020160010546A KR 20160010546 A KR20160010546 A KR 20160010546A KR 101764292 B1 KR101764292 B1 KR 101764292B1
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- switch
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- quadrature coupler
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/02—Details
- H03C3/09—Modifications of modulator for regulating the mean frequency
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
- H03C7/025—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C2200/00—Indexing scheme relating to details of modulators or modulation methods covered by H03C
- H03C2200/0004—Circuit elements of modulators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C2200/00—Indexing scheme relating to details of modulators or modulation methods covered by H03C
- H03C2200/0037—Functional aspects of modulators
- H03C2200/0058—Quadrature arrangements
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Abstract
Description
The present invention relates to a 6 port RF signal modulator and a control method thereof.
In the RF signal modulator, the conventional I / Q transmission terminal receives I and Q signals from the digital signal part of the preceding stage as shown in FIG. 19, and outputs a DAC, a low pass filter, a mixer, And upconverts the baseband signal to a frequency of a desired band and generates a desired RF signal by vector sum of the modulated I and Q signals.
However, the conventional structure has a disadvantage in that not only is the number of required components constituting the transmitting end large, but also the time required for correction to compensate for mismatching between corresponding identical parts between I / Q signal paths becomes longer and difficult .
It is expected that it will cost a great deal to implement massive multiple input and multiple output (MIMO) transceivers which are proposed as the core of next generation communication. In addition, each component is basically fixed in the operating band frequency characteristics, and it is difficult to flexibly support the multi-mode multiband which is recently required.
In order to reduce the cost of the transmitter and receiver in the high-capacity and fine-tuned transmission / reception environment, a number of new transmitter stages for reducing the number of components required for the transmitter in recent years and for supporting multi-mode and multi- have.
SUMMARY OF THE INVENTION The present invention is intended to solve the problems of the prior art described above.
More particularly, it is an object of the present invention to provide a 6-port RF signal modulator capable of low power consumption, structural simplification, miniaturization, and even impedance control, and a control method thereof.
A six-port RF signal modulator according to an embodiment of the present invention includes: a first quadrature coupler; A second quadrature coupler coupled to a first output port of the first quadrature coupler; A third quadrature coupler coupled to a second output port of the first quadrature coupler; A first? / 4 line and a second? / 4 line respectively connected to a first output port and a second output port of the second quadrature coupler; A third? / 4 line and a fourth? / 4 line respectively connected to the first output port and the second output port of the third quadrature coupler; A plurality of first switch portions connected in parallel to the first? / 4 line and the second? / 4 line; A plurality of second switch portions connected in parallel to the third? / 4 line and the fourth? / 4 line; And a combiner coupled to the isolation port of the second quadrature coupler and to the isolation port of the third quadrature coupler.
The first switch unit includes a first switch connected to the first? / 4 line and a second switch connected to the second? / 4 line, and the second switch unit includes a third switch connected to the third? / 4 line, And a fourth switch connected to the fourth? / 4 line.
A BB signal generator connected to the first switch and the second switch, and a BB signal generator connected to the third switch and the fourth switch.
The apparatus may further include a fifth switch and a sixth switch connected in parallel to the first switch and the second switch, and may further include a seventh switch and an eighth switch connected in parallel to the third switch and the fourth switch.
The first? / 4 line, the second? / 4 line, the third? / 4 line, and the fourth? / 4 line may include a capacitor and an inductor.
The first switch, the second switch, the third switch, and the fourth switch may be transistors.
The method of controlling a six port RF signal modulator according to an embodiment of the present invention includes the steps of: a first quadrature coupler outputting a signal to a first output port and a second output port; A second quadrature coupler receives an output signal output from the first output port of the first quadrature coupler via an input port and a third quadrature coupler receives an output signal output from the first output port of the first quadrature coupler, Receiving an output signal through an input port; A first? / 4 line connected to a first output port of the second quadrature coupler, a second? / 4 line connected to a second output port of the second quadrature coupler, and a second? / 4 line connected to a second output port of the second quadrature coupler, adjusting a signal output to the isolation port of the second quadrature coupler by a plurality of first switch parts connected in parallel on the? / 4 line; A third λ / 4 line connected to a first output port of the third quadrature coupler, a fourth λ / 4 line coupled to a second output port of the third quadrature coupler, and a third λ / adjusting a signal output to the isolation port of the third quadrature coupler by a plurality of second switch portions connected in parallel to the? / 4 line; And combining the signals output from the isolation ports of each of the second quadrature coupler and the third quadrature coupler to output an RF signal.
Wherein adjusting the signal output to the isolation port of the second quadrature coupler is controlled by a switch operation of the first switch and the second switch included in the first LSB, The step of adjusting the output signal may be controlled by a switch operation of the third switch and the fourth switch included in the second LSB.
The switch operation is controlled by the same BB signal for the first switch and the second switch, and the switch operation can be controlled by the same BB signal for the third switch and the fourth switch.
Further comprising a fifth switch and a sixth switch connected in parallel to the first switch and the second switch, the seventh switch and the eighth switch connected in parallel to the third switch and the fourth switch, The switch operation of the first switch and the second switch is controlled by the bias voltage supplied by the switch operation of the seventh switch and the switch operation of the third switch and the fourth switch by the bias voltage supplied by the switch operation of the seventh switch Can be controlled.
The six-port RF signal modulator and the control method thereof according to the embodiment of the present invention enable low power consumption, structural simplification, miniaturization, and uniform control of impedance.
In addition, it is possible to ensure the uniformity of the control interval of the impedance, to adjust the distortion phenomenon of the reflection coefficient, and to increase the variation range of the resolution and the impedance.
Figure 1 illustrates a six port RF signal modulator in accordance with an embodiment of the present invention.
Figure 2 shows a six port RF signal modulator with a diode connected to the output port of the quadrature coupler.
3 shows a six port RF signal modulator in which a transistor is connected to the output port of a quadrature coupler.
FIG. 4 shows the baseband signals supplied to the diode and transistor in FIGS. 2 and 3. FIG.
5 shows a switch part of a six port RF signal modulator according to an embodiment of the present invention.
6 is a view for explaining a transistor of the switch portion of FIG.
Figs. 7 to 11 show the relationship between the load impedance Z L and the reflection coefficient due to the change of the characteristic impedance Z o .
12 shows a six port RF signal modulator in which transistors are connected in parallel to the output port of a quadrature coupler.
13 shows a change in the load impedance according to the code in Fig.
FIG. 14 shows a variation of a reflection coefficient according to a bit in FIG.
15 shows a change in load impedance according to a code in a 6-port RF signal modulator according to an embodiment of the present invention.
16 shows a variation of reflection coefficient according to a bit in a 6-port RF signal modulator according to an embodiment of the present invention.
FIG. 17 shows a variation of a reflection coefficient according to a bit by adjusting a? / 4 line in a 6-port RF signal modulator according to an embodiment of the present invention.
18 shows a six port RF signal modulator according to another embodiment of the present invention.
19 shows a conventional RF signal modulator.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements. In the drawings, like reference numerals are used throughout the drawings. In addition, "including" an element throughout the specification does not exclude other elements unless specifically stated to the contrary.
6 ports RF signal modulator
1 shows a six port
Referring to FIG. 1, a six-port
The six port
Also, the isolation port of the
The
The
Thus, I / Q signals having 90-degree phase differences having different values can be generated, and output to an isolation port of the
Therefore, the RF signal modulator using the six ports is connected to the first output port and the second output port of the
[Mathematical Expression]
b1: 6 port RF signal modulator (10) Output signal phaser
a2: LO signal applied to the input port of the 6 port RF signal modulator (10)
Γ 3 , Γ 4 , Γ 5 , Γ 6 : reflection coefficient at each port
Γ I : In-phase signal reflection coefficient (Γ 3 + Γ 4 )
Γ Q : Quadrature signal representation reflection coefficient (Γ 5 + Γ 6 )
j: imaginary unit
RF out : Output signal time domain of RF signal modulator
The first output port and the second output port of the
The 6-port
More specifically, in the 6-port
The
The value of the output impedance may be changed by the on-off switch operation of the
The first through
The reason for changing the output impedance as described above may be to change the reflection coefficient of the output port of the
In this case, since the parasitic capacitors included in the
The
The first λ / 4
A
Hereinafter, a six port RF signal modulator having a configuration in contrast to the embodiment of the present invention will be described with reference to FIGS. 2 to 4. FIG.
Figure 2 shows a six port RF signal modulator with a diode connected to the output port of a quadrature coupler, Figure 3 shows a six port RF signal modulator with a transistor connected to the output port of a quadrature coupler, 2 and the baseband signal supplied to the diode and the transistor in FIG.
Figure 2 shows a diode coupled to the output port of the quadrature coupler for load impedance modulation and Figure 3 shows a transistor coupled to the output port of the quadrature coupler.
Both FIGS. 2 and 3 adjust the respective output impedances by adjusting the bias voltage. 2 and 3, each of the bias voltages is a base band signal of I / Q. As shown in FIG. 4, a digital I / Q signal received from a digital signal processing unit is converted into an analog signal through a DAC and a low pass filter Signal.
The RF signal modulator shown in FIG. 2 and FIG. 3 requires a DAC and a low pass filter in each signal path for I and Q like a conventional transmitter. Also, due to mismatches occurring in this portion, calibration is required to generate an accurate RF signal.
Further, due to the nonlinear characteristics of the diode and the transistor, there is a problem that the range of the bias voltage that can be used as the linear section is limited, thereby limiting the reflection coefficient obtained by load variation.
2 and 3, the 6-port RF signal modulator according to the embodiment of the present invention includes a switch arrangement that can be directly controlled with digital I / Q bits, as shown in FIG. As each switch is turned on, the output impedance of the entire switch array can change.
In this case, in order to increase the resolution of the impedance change, the first switch unit and the second switch unit may be configured to be on-off (Vbias-GND) instead of VDD-GND in an on-off switch operation.
The first to fourth? / 4 lines are connected to the first to fourth switches of the first switch unit and the second switch unit for the output impedance conversion.
The reason for changing the output impedance as described above may be to change the reflection coefficient of the output port of the second quadrature coupler and the third quadrature coupler.
By inserting the first to fourth lambda / 4 lines to the second quadrature coupler and the third quadrature coupler between the first switch part and the second switch part, the output impedance is multiplied from the value by the parallel sum, Can be made like the change of value by. This allows the value of the reflection coefficient to be adjusted to have an even resolution.
The first switch to the fourth switch arrangement of the first switch unit and the second switch unit may be configured as shown in FIG. The first to fourth switches may be directly controlled by the digital IQ signal. This eliminates the need for DACs and low pass filters in each signal path, unlike conventional structures.
6 is a view for explaining a transistor of the switch portion of FIG. The first to fourth switches can be understood as R ON and C OFF , and can be expressed by the following equations.
Each of the switch units is composed of two switches and can be turned on or off according to the I or Q signal of the gate unit. At this time, when all the switches are turned on, the value of W becomes larger as shown in the following equation, so that the R ON resistance becomes smaller and becomes closer to the short. When all the switches are turned off, the W value becomes smaller and the R ON value becomes open It gets closer.
[Mathematical Expression]
τ: time constant
R ON : resistance in the linear region of the switch (MOSFET)
C OFF : Capacitance when the switch (MOSFET) is OFF
μ n : mobility of an N-type switch (MOSFET)
C OX : Oxide capacitance of switch (MOSFET)
W: width of switch (MOSFET)
L: Length of switch (MOSFET)
V GS : gate-source voltage of the switch (MOSFET)
V T : Threshold voltage of the switch (MOSFET)
This can be expressed as shown in Table 1 below.
The impedance viewed from the output terminal of the switch unit can be controlled as described based on the above equation. The first switch to the fourth switch arrangement must have the smallest impedance value and also the largest impedance value. However, when the switch, especially the transistor, is turned on due to the parasitic capacitor component, the R ON resistance becomes small, and when it is off, it has a small impedance, and it is difficult to secure a desired impedance value. The overall size of the switch portion has a trade-off relationship with an impedance value that can be obtained at the time of on-off as shown in FIG. And, the R ON resistance that can be on when it is turned on and the impedance due to parasitic capacitors that can be turned off can be determined by the CMOS process. Thus, the range of the output impedance that the switch section can have is limited, which is directly related to the limitation of the reflection coefficient value at the output port of the quadrature coupler.
Figs. 7 to 11 show the relationship between the load impedance Z L and the reflection coefficient due to the change of the characteristic impedance Z o .
The reflection coefficient may be determined by a characteristic impedance Z O and a load impedance Z L as shown in FIGS. 7 through 11 and the following equations.
[Mathematical Expression]
Γ: Reflection coefficient
Z L : Load impedance
Z O : characteristic impedance
As described above, if the change width of the load impedance ZL is limited, the reflection coefficient range can be further extended from +1 to -1 by having a value other than 50Ω in the characteristic impedance Z 0 . As shown in FIG. 7, when the load impedance (Z L ) is in the range of 1 to 150, the characteristic impedance (Z0) has a value smaller than 50?, So that the range of the reflection coefficient can be further widened. When 25 Ω is used than when 50 Ω is used, it can be seen that the reflection coefficient is increased by about 0.3.
In this case, as shown in FIGS. 8 to 11, when the characteristic impedance is variously varied, the range of the reflection coefficient value is wide between 10? And 15 ?. However, since the imaginary impedance value increases, distortion may be increased. Therefore, it is preferable to use 25 Ω.
FIG. 12 shows a six-port RF signal modulator in which transistors are connected in parallel to the output port of the quadrature coupler. FIG. 13 shows a change in load impedance according to the code in FIG. 12, Bit) of the reflection coefficient.
The six-port RF signal modulator of FIG. 12 is connected in parallel with the switch portion without connecting the? / 4 line to the output port of the quadrature coupler. As shown in FIG. 13, since the switch unit is connected in parallel, the load impedance is sharply reduced as the code becomes larger, and it is difficult to secure a resolution for controlling the load impedance according to the code. As shown in Fig. 14, it can be seen that it is difficult to express any part because the interval of each point is very wide in the region where the reflection coefficient is close to 1.
FIG. 15 shows a change in load impedance according to a code in a 6-port RF signal modulator according to an embodiment of the present invention, and FIG. 16 shows a change in load impedance according to a bit in a 6-port RF signal modulator according to an embodiment of the present invention. 17 shows a change in reflection coefficient according to a bit by adjusting a? / 4 line in a 6-port RF signal modulator according to an embodiment of the present invention, .
A six-port RF signal modulator according to an embodiment of the present invention can prevent the above-described problem by disposing a? / 4 line between the output port of the quadrature coupler and the switch unit configured in parallel.
When the λ / 4 line is inserted between the 6-port RF signal modulator and the variable-load-in switch, the output impedance can be made to be like a series-sum value from the sum of parallel sum. FIGS. 15 and 16 show that the output impedance changes at a constant interval according to the code of the switch portion, and the reflection coefficient value has a more uniform resolution in each range.
Further, when the impedance of the? / 4 line is corrected, a reflection coefficient value can be generated so as to approach a more ideal range, that is, from -1 to 1 as shown in FIG.
18 shows a six port RF signal modulator according to another embodiment of the present invention.
18, a six port RF signal modulator according to another embodiment further includes a
As mentioned above, the resolution of the switch part and the variation range of the impedance are difficult due to the presence of the parasitic element only in terms of the size of the LSB switch. Therefore, as shown in FIG. 18, a switch of the switch section can be configured to increase the resolution and impedance variation width.
A ground is connected to one drain of the
At this time, when the
In this way, when the switch is turned on using a static bias voltage, it can have a higher resolution and a wider impedance variation range can be secured.
6 ports Control method of RF signal modulator
The configurations described below are the same as those described above.
The method of controlling a six port RF signal modulator according to an embodiment of the present invention includes the steps of: a first quadrature coupler outputting a signal to a first output port and a second output port; A second quadrature coupler receives an output signal output from the first output port of the first quadrature coupler via an input port and a third quadrature coupler receives an output signal output from the first output port of the first quadrature coupler, Receiving an output signal through an input port; A first? / 4 line connected to a first output port of the second quadrature coupler, a second? / 4 line connected to a second output port of the second quadrature coupler, and a second? / 4 line connected to a second output port of the second quadrature coupler, adjusting a signal output to the isolation port of the second quadrature coupler by a plurality of first switch parts connected in parallel on the? / 4 line; A third λ / 4 line connected to a first output port of the third quadrature coupler, a fourth λ / 4 line coupled to a second output port of the third quadrature coupler, and a third λ / adjusting a signal output to the isolation port of the third quadrature coupler by a plurality of second switch portions connected in parallel to the? / 4 line; And combining the signals output from the isolation ports of each of the second quadrature coupler and the third quadrature coupler to output an RF signal.
Wherein adjusting the signal output to the isolation port of the second quadrature coupler is controlled by a switch operation of the first switch and the second switch included in the first switch unit, May be controlled by a switch operation of the third switch and the fourth switch included in the second switch unit.
In addition, the switch operation is controlled by the same BB signal for the first switch and the second switch, and the switch operation can be controlled by the same BB signal for the third switch and the fourth switch.
By such control, it includes a switch arrangement which can be directly controlled with digital I / Q bits. As each switch is turned on, the output impedance of the entire switch array can change.
The first λ / 4 line to the fourth λ / 4 line are inserted between the second quadrature coupler and the third quadrature coupler, and between the first switch unit and the second switch unit to output the output impedance in series It can be made like a change of value by sum. This allows the value of the reflection coefficient to be adjusted to have an even resolution.
The first switch to the fourth switch arrangement of the first switch unit and the second switch unit may be configured as shown in FIG. The first to fourth switches may be directly controlled by the digital IQ signal. This eliminates the need for DACs and low pass filters in each signal path, unlike conventional structures.
Further comprising a fifth switch and a sixth switch connected in parallel to the first switch and the second switch, the seventh switch and the eighth switch connected in parallel to the third switch and the fourth switch, The switch operation of the first switch and the second switch is controlled by the bias voltage supplied by the switch operation of the seventh switch and the switch operation of the third switch and the fourth switch by the bias voltage supplied by the switch operation of the seventh switch Can be controlled.
As mentioned above, the resolution of the switch part and the variation range of the impedance are difficult due to the presence of the parasitic element only in terms of the size of the LSB switch. Therefore, as shown in FIG. 18, the switches of the switch section can be configured to increase the resolution and impedance variation width.
The fifth switch and the sixth switch connected in parallel to the first switch and the second switch are connected to one of the drains and the other to supply bias to the other drain. Also, one of the seventh switch and the eighth switch connected in parallel to the third switch and the fourth switch is connected to ground, and the other drain is connected to supply a bias. For example, the drains of the fifth switch and the seventh switch may be connected to be biased, and the drains of the sixth switch and the seventh switch may be connected to the ground.
At this time, when the fifth switch is in a switch-on state, a bias voltage is applied to the first switch and the second switch, and when the sixth switch is in an on state, 0 V is applied to the first switch and the second switch . Similarly, when the seventh switch is in a switch-on state, a bias voltage is applied to the third switch and the fourth switch, and when the eighth switch is in an on state, 0 V is applied to the third switch and the fourth switch .
The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.
10: 6 port RF signal modulator
110: first quadrature coupler
120: second quadrature coupler
130: third quadrature coupler
140: first? / 4 line
150: second? / 4 line
160: third? / 4 line
170: fourth? / 4 line
180:
190: second switch section
181: first switch
182: second switch
191: Third switch
192: fourth switch
183: fifth switch
184: sixth switch
200: Combiner
Claims (10)
A second quadrature coupler coupled to a first output port of the first quadrature coupler;
A third quadrature coupler coupled to a second output port of the first quadrature coupler;
A first? / 4 line and a second? / 4 line respectively connected to a first output port and a second output port of the second quadrature coupler;
A third? / 4 line and a fourth? / 4 line respectively connected to the first output port and the second output port of the third quadrature coupler;
A plurality of first switch portions connected in parallel to the first? / 4 line and the second? / 4 line;
A plurality of second switch portions connected in parallel to the third? / 4 line and the fourth? / 4 line; And
And a combiner coupled to the isolation port of the second quadrature coupler and the isolation port of the third quadrature coupler.
The first switch unit includes a first switch connected to the first? / 4 line and a second switch connected to the second? / 4 line, and the second switch unit includes a third switch connected to the third? / 4 line, And a fourth switch connected to the fourth? / 4 line.
A BB signal generator connected to the first switch and the second switch, and a BB signal generator connected to the third switch and the fourth switch.
Further comprising a fifth switch and a sixth switch connected in parallel to the first switch and the second switch,
And a seventh switch and an eighth switch connected in parallel to the third switch and the fourth switch.
Wherein the first? / 4 line, the second? / 4 line, the third? / 4 line, and the fourth? / 4 line include a capacitor and an inductor.
Wherein the first switch, the second switch, the third switch, and the fourth switch are transistors.
A second quadrature coupler receives an output signal output from the first output port of the first quadrature coupler via an input port and a third quadrature coupler receives an output signal output from the first output port of the first quadrature coupler, Receiving an output signal through an input port;
A first? / 4 line connected to a first output port of the second quadrature coupler, a second? / 4 line connected to a second output port of the second quadrature coupler, and a second? / 4 line connected to a second output port of the second quadrature coupler, adjusting a signal output to the isolation port of the second quadrature coupler by a plurality of first switch parts connected in parallel on the? / 4 line;
A third λ / 4 line connected to a first output port of the third quadrature coupler, a fourth λ / 4 line coupled to a second output port of the third quadrature coupler, and a third λ / adjusting a signal output to the isolation port of the third quadrature coupler by a plurality of second switch portions connected in parallel to the? / 4 line; And
Wherein the combiner combines the signals output from the isolation ports of each of the second and third quadrature couplers and the third quadrature coupler to output an RF signal.
Wherein adjusting the signal output to the isolation port of the second quadrature coupler is controlled by a switching operation of the first switch and the second switch,
Wherein the step of adjusting the signal output to the isolation port of the third quadrature coupler is controlled by a switch operation of the third switch and the fourth switch.
Wherein the switch operation is controlled by the same BB signal as that of the first switch and the second switch, and the switch operation is controlled by the same BB signal as that of the third switch and the fourth switch. Way.
Further comprising a fifth switch and a sixth switch connected in parallel to the first switch and the second switch,
Further comprising a seventh switch and an eighth switch connected in parallel to the third switch and the fourth switch,
A bias voltage is applied to the first switch and the second switch when the fifth switch is in a switch-on state, and 0 V is applied to the first switch and the second switch when the sixth switch is in an on-
A bias voltage is applied to the third switch and the fourth switch when the seventh switch is in a switch-on state, and 0 V is applied to the third switch and the fourth switch when the eighth switch is in an on-state. Port RF signal modulator.
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Non-Patent Citations (2)
Title |
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Direct Carrier Six-Port Modulator Using a Technique to Suppress Carrier Leakage(2011.03. 공개) |
SIX-PORT TRANSCEIVER FOR 6-9 GHz ULTRAWIDEBAND SYSTEMS(2010. 03. 공개) |
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