KR101744052B1 - Separation method of single-walled carbon nanotubes using polydimethylsiloxane film - Google Patents
Separation method of single-walled carbon nanotubes using polydimethylsiloxane film Download PDFInfo
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- KR101744052B1 KR101744052B1 KR1020150075936A KR20150075936A KR101744052B1 KR 101744052 B1 KR101744052 B1 KR 101744052B1 KR 1020150075936 A KR1020150075936 A KR 1020150075936A KR 20150075936 A KR20150075936 A KR 20150075936A KR 101744052 B1 KR101744052 B1 KR 101744052B1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
Abstract
The present invention relates to a method for separating single-walled carbon nanotubes using a polydimethylsiloxane film, and more particularly, to a method for separating single-walled carbon nanotubes by stamping a polydimethylsiloxane film functionalized with an amine group into a single-walled carbon nanotube mixture arranged between dielectrophoretic electrodes To a method for separating metallic single-walled carbon nanotubes.
According to the method for separating single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention, the commercial single-walled carbon nanotubes produced by the conventional mass-synthesis method can be used as a stamping method using only a surfactant without any surface treatment, Can be separated.
Description
The present invention relates to a method for separating single-walled carbon nanotubes using a polydimethylsiloxane film, and more particularly, to a method for separating single-walled carbon nanotubes by stamping a polydimethylsiloxane film functionalized with an amine group into a single-walled carbon nanotube mixture arranged between dielectrophoretic electrodes To a method for separating metallic single-walled carbon nanotubes.
Recently, carbon nanotube technology has received great attention due to its basic characteristics and future applications. Interesting features of carbon nanotubes include electrical, mechanical, optical, and chemical properties, which make carbon nanotubes useful in many applications. Carbon nanotubes have high aspect ratio and specific surface area, and are excellent in mechanical properties, electrical properties, and thermal properties and chemically stable properties. Therefore, studies on application in many fields such as conductive transparent electrodes, transistors, and electron emitting devices are actively conducted have.
Carbon nanotubes are synthesized by various methods such as laser evaporation, arc discharge, and chemical vapor deposition (CVD). However, in the present state, any synthesis method is used only in the form of a mixture of metal single-walled carbon nanotubes and semiconductor single-walled carbon nanotubes.
In practical use, since only metal or semiconducting materials are used in many cases, research for separating and purifying only metal or semiconductor single-walled carbon nanotubes from a single-walled carbon nanotube mixture has become important. In addition, since semiconducting single-walled carbon nanotubes have different characteristics of semiconductors according to their structures (diameter and chirality (to be described later)), a method for obtaining semiconducting single-walled carbon nanotubes having a uniform structure is desperately needed . However, the carbon nanotubes having similar binding energies are different in electronic structure due to the difference in the keying angle, and it is not easy to carry out the separation using the difference.
Although there have been studies to separate metal single-walled carbon nanotubes and semiconductor single-walled carbon nanotubes, there are many problems that (1) automation can not be performed due to complicated processes, (2) , (3) it can not be mass-processed, (4) it requires expensive equipment or chemicals, (5) only one of metal single wall carbon nanotubes and semiconductor single wall carbon nanotubes , And (6) low recovery rates, which are industrially problematic in producing metal single wall carbon nanotubes and semiconductor single wall carbon nanotubes.
For example, a method of dielectrophorizing a single-walled carbon nanotube dispersed with a surfactant on a microelectrode (Non-Patent Document 1), a method of using amines as a dispersant in a solvent (Non-Patent Documents 2 and 3) (Non-Patent Document 4). However, these problems are particularly problematic in that the final material obtained is limited to metal single-walled carbon nanotubes only and thus the recovery rate is low. Remains.
A mixture of semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes is dispersed in a liquid and the metallic single-walled carbon nanotubes are selectively bonded to the particles to remove the metallic single-walled carbon nanotubes A method for separating single-walled carbon nanotubes from semiconductors (Patent Document 1) discloses a method for separating single-walled carbon nanotubes from semiconductor single-walled carbon nanotubes by treating the single-walled carbon nanotubes with a solution containing nitronium ions, filtering and heat- (Patent Document 2), a method of using sulfuric acid and nitric acid (Patent Document 3), a method of selectively moving and separating a single-walled carbon nanotube by applying an electric field to obtain an electric conductivity range And a method of obtaining narrowed semiconductor single-walled carbon nanotubes (Patent Document 4). However, in such a method, there still remains a problem that the final material obtained is confined to semiconductor single-walled carbon nanotubes and the recovery rate thereof is low.
There is a method of separating a single-walled carbon nanotube dispersed with a surfactant into a metal-type single-walled carbon nanotube and a semiconductor-type single-walled carbon nanotube by a density gradient ultracentrifugation method (Non-Patent Document 1). This method uses a very expensive instrument called an ultracentrifuge, requires a long centrifugal operation and requires a large number of ultracentrifuges in parallel. There is a problem such as difficulty in processing.
In addition, by controlling the pH and ionic strength of a single-walled carbon nanotube solution dispersed with a surfactant, protonation is generated to different degrees depending on the kind of the single-walled carbon nanotube, and the metal type and semiconductor type are separated (Patent Document 6), this method requires a step of pre-treating the pH or ionic strength of the suspended nanotube mixture prior to separation using a strong acid, and strict process control is inevitable for this, Finally, there is a problem in that separation of metallic and semiconductor single-walled carbon nanotubes is not efficient.
Recently, the separation method by the interaction of organic molecule and SWNT has been reported. It has been reported that amine compounds with electron donor groups such as octadecylamine strongly bind to sc-SWNTs and aromatic polymer materials bind strongly to m-SWNTs with high polarizability by pi-pi interaction. SWNT separation methods using the binding strength difference between SWNT and sc-SWNT have recently been reported. The BaO group reported that sc-SWNT was selectively deposited when a SWNT solution was deposited by spin coating on an amine-coated monolayer layer, and succeeded in fabricating a thin thin film transistor using this. In addition, Zhang group recently succeeded in separating m- and sc-SWNTs by sticking single-walled carbon nanotubes grown by CVD on scotch tape with amine and phenyl functional groups, respectively. Both of these methods have the advantage that they can be separated without damaging while maintaining the inherent characteristics of single-walled carbon nanotubes.
However, the spin coating method has a somewhat low separation yield and a substrate size limitation. In the case of single-walled carbon nanotube separation grown by CVD, the CVD method is difficult to manufacture a single-walled carbon nanotube having a large capacity It is difficult to commercialize it.
DISCLOSURE Technical Problem In order to overcome the problems of the prior art as described above, the present invention provides a method for producing a polyvinylidene fluoride film by dispersing commercialized mass produced SWNTs in an aqueous solution containing an anionic surfactant, aligning the polyvinylidene siloxane film with an anion- And a new method for separating semiconductor single walled carbon nanotubes and metal single walled carbon nanotubes from each other by a single stamping method.
The present invention has been made to solve the above problems
Preparing a carbon nanotube dispersion solution;
Aligning the single-walled carbon nanotube solution using dielectrophoresis;
Preparing a functionalized polydimethylsiloxane film;
Pressing the surface-functionalized polydimethylsiloxane film onto a single-walled carbon nanotube aligned using the dielectrophoresis; And
Separating the functionalized polydimethylsiloxane film; Containing
A method for separating single-walled carbon nanotubes using a polydimethylsiloxane film is provided.
FIG. 1 schematically shows a method for separating single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention.
In the present invention, the step of preparing the single-walled carbon nanotube dispersion solution includes
Dissolving the surfactant in distilled water;
Dispersing the single walled carbon nanotubes in the distilled water in which the surfactant is dissolved; And
Centrifuging the solution containing the single-walled carbon nanotubes; And a control unit.
In the present invention, the surfactant is preferably an anionic surfactant, and more specifically, it is sodium dodecyl sulfate (SDS).
In the present invention, it is preferable that the surfactant is an anionic surfactant that selectively binds to the metallic single-walled carbon nanotube. When the metallic single-walled carbon nanotube exhibits negative charge due to the surfactant, Lt; RTI ID = 0.0 > siloxane < / RTI > film.
In the present invention, the surfactant selectively binds only to the metallic single-walled carbon nanotubes. In order to selectively bond the metallic single-walled carbon nanotubes to the metallic single-walled carbon nanotubes, the surfactant may be a covalent bond It is possible to functionalize the single-walled carbon nanotube in the reaction and then re-substitute the diazonium salt to be charged to a desired electric charge.
In the present invention, the polydimethylsiloxane film is functionalized to exhibit a charge opposite to the charge represented by the surfactant, specifically, functionalized with an amine to exhibit a positive charge. In the present invention, when polydimethylsiloxane surface-treated with an amine is treated with a surfactant and then stamped on single-walled carbon nanotubes arranged between dielectrophoretic electrodes, only semiconductive single-walled carbon nanotubes exhibiting negative charges are electrostatically Characterized in that it is separated while being attached to a polydimethylsiloxane film surface-treated with amines by gravity.
In the present invention, the step of centrifuging the solution containing the single-walled carbon nanotubes is performed at 2500 to 3500 rpm for 3 to 5 hours.
In the present invention, in the step of aligning the single-walled carbon nanotube solution using dielectrophoresis, a voltage of 1 kHz to 10 MHz, 2 to 5 V is applied to first and second dielectrophoretic electrodes facing each other .
In the present invention, the step of preparing a polydimethylsiloxane film whose surface is functionalized with an amine group
Mixing a silicone elastomeric base and a silicone elastomeric curing agent in a weight ratio of 10: 1 to 10: 2;
Spin-coating the mixture on the substrate to form a film;
Firing said formed formation;
Treating the surface of the fired film with air plasma;
Immersing the film treated with the air plasma in an aqueous solution of a compound containing an amine group;
And washing with ethanol to remove a compound containing an unreacted amine group.
In the present invention, the amine group-containing compound is 3-aminopropyl-triethoxysilane (C 9 H 23 NO 3 Si, APTES).
In the present invention, the firing step is characterized in that the firing is performed in an oven at 900 ° C to 1000 ° C for 1 hour.
In the present invention, the separated polydimethylsiloxane film includes metallic single-walled carbon nanotubes.
In the present invention, the single-walled carbon nanotube aligned between the dielectrophoretic electrodes after the stamping step may include semiconducting single-walled carbon nanotubes.
FIG. 2 is a graph showing the results of the interaction between a single-walled carbon nanotube treated with an anionic surfactant and a polydimethylsiloxane film surface-functionalized with an amine group in the method of separating single-walled carbon nanotubes using a polydimethylsiloxane film according to the present invention. Respectively. As shown in FIG. 2, the method of separating single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention comprises: adsorbing single-walled carbon nanotubes more strongly with metallic single-walled carbon nanotubes; After mixing with the anionic surfactant known to adsorb weakly, the mixed solution is placed between the dielectrophoretic electrodes, aligned by dielectrophoretic method, and then subjected to a cleaning process, the surfactant weakly attached to the semiconducting single-walled carbon nanotubes The anionic surfactant is strongly adhered to the semiconducting single-walled carbon nanotube and is not removed during the cleaning process, so that only the semiconducting single-walled carbon nanotube exhibits a negative charge.
The method for separating single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention is characterized in that commercialized mass-produced single-walled carbon nanotubes prepared by the conventional mass synthesis method are dispersed in an aqueous solution containing an anionic surfactant, After the alignment, the polymethylsiloxane film treated with an amine functional group can be used to separate the metal carbon nanotubes and semiconducting single-walled carbon nanotubes in one step with high efficiency, by a single stamping method. -up) can be expected.
1 schematically shows a method for separating single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention.
2 shows the principle of separation of single-walled carbon nanotubes using the polydimethylsiloxane film according to the present invention.
Figure 3 shows the dielectrophoretic device used in the present invention.
Figure 4 illustrates a single-wall carbon nanotube arrayed between electrodes of a dielectrophoretic device according to an embodiment of the present invention and a single wall carbon nanotube separated into a polydimethylsiloxane film whose surface is functionalized with amine groups according to another embodiment of the present invention. SEM photographs of the nanotubes are shown.
FIG. 5 is a graph showing the results of a single-walled carbon nanotube aligned between electrodes of a dielectrophoretic device according to an embodiment of the present invention and a polydimethylsiloxane film whose surface is functionalized with an amine group after performing a stamping method according to another embodiment of the present invention And Raman spectra of single-walled carbon nanotubes remaining between the electrodes of the dielectrophoretic device.
Hereinafter, the present invention will be described in more detail by way of examples. However, the present invention is not limited by the following examples.
< Example 1> Single wall Carbon Nanotube Dispersion Manufacturing
HipCO (High-pressure carbon monoxide process) Single-walled carbon nanotubes were pretreated for 1 hour at 420 ° C, and no separate cleaning operation was performed to minimize other side-wall functionalities.
Sodium dodecyl sulfate (SDS), which is a negative charge known to selectively adsorb to 1% (w / v) metallic single wall carbon nanotubes as a surfactant, is dissolved in distilled water, and the single wall carbon nanotube .
To separate the dispersed single-walled carbon nanotubes individually, they were centrifuged at 3000 rpm for 4 hours using an ultrafast centrifuge. The final concentration of the single walled carbon nanotube solution is 0.5 mg / ml.
< Example 2> electrophoresis Single wall Carbon nanotube alignment
In the present invention, the dielectrophoretic apparatus shown in Fig. 3 was used.
Methods of using dielectrophoresis as a method for vertically aligning elongated materials such as conventional nanotubes on a substrate are known. The method comprises the steps of providing two parallel electrode plates (not shown) disposed opposite one another in a bath (4) containing a solution (3) in which a pre-chemically treated material (2) The direct current (DC) is applied to the anode plate 1a and the anode plate 1b. The material 2 moves to the negative charge side or the positive charge side depending on the charged state. Generally, the nanotube moves toward the cathode plate 1b .
An alternating current was used to generate a magnetic field between the electrodes. The electrodes were designed as shown in Fig. 3 (b), the width of the electrodes was 10 탆, and the spacing was 6 탆. The impurities remaining on the electrode were removed. 5 mu l of the dispersed single-walled carbon nanotube solution was dropped between the source electrode and the drain electrode of the dielectrophoretic device. It was confirmed that optimum dielectrophoretic conditions that can arrange single wall carbon nanotubes at high density occur between 1kHz ~ 10MHz and 2 ~ 5V.
FIG. 3 (b) shows an enlarged view of the single-walled carbon nanotubes aligned after the single-walled carbon nanotubes are aligned between the dielectrophoretic electrodes by applying a voltage to the electrodes.
< Example 3> The surface Amine group Functionalized Polydimethylsiloxane Production of film
A blend prepared by mixing a prepolymer of polydimethylsiloxane and a curing agent at a mass ratio of 10: 1 was stirred for 20 minutes, and then left for 1 hour to remove air bubbles in the mixture.
The microscope slides were used as substrates for film production. First, the microscope slide was ultrasonically washed through distilled water / acetone / ethanol / distilled water. A blend of the prepolymer of the polydimethylsiloxane and the curing agent was applied to the surface of the cleaned microscope slide and fired in an oven at 980 ° C for 1 hour to prepare an elastomeric polydimethylsiloxane film.
The prepared polydimethylsiloxane film was immediately subjected to air plasma treatment at a force of 90 W at a gas flow rate of 15 sccm before removing the microscope slide before the surface was contaminated. The air plasma treatment time was changed to 5, 10, and 15 minutes, respectively.
3-aminopropyl-triethoxysilane (C 9 H 23 NO 3 Si, APTES) as a compound containing an amine group was added to ethanol at concentrations of 1, 5, 10, 20, and 30% for attachment of amine groups onto the polydimethylsiloxane film.
The polydimethylsiloxane film treated with the air plasma was immersed in a solution of the compound containing amine groups for 10 minutes to allow amine groups to adhere to the polydimethylsiloxane film surface. Then, it was washed with ethanol to remove unreacted triethoxysilane. The polydimethylsiloxane film functionalized with the resulting amine groups was used after drying for 5 minutes.
< Example 4> The surface Amine group Functionalized Polydimethylsiloxane Film was used to align the dielectrophoretic electrodes Single wall Carbon nanotube separation
The polydimethylsiloxane film functionalized with an amine group on the surface prepared in Example 3 was laminated on the aligned single-walled carbon nanotube layer using the dielectrophoretic method prepared in Example 2, and pressure was applied by a stamping method, The metal single wall carbon nanotubes among the single wall carbon nanotubes aligned between the electrodes were removed.
< Experimental Example > SEM Photo measurement
SEM photographs of single-walled carbon nanotubes aligned between the electrodes of the dielectrophoretic device in Example 2 and single-walled carbon nanotubes separated into polydimethylsiloxane films functionalized with amine groups on the surface in Example 4 were measured And are shown in Figs. 4 (a) and 4 (b), respectively.
The greatest difference between Figures 4 (a) and 4 (b) is the density of the single-walled carbon nanotubes on the surface, which is a single wall aligned between the dielectrophoretic electrodes by stamping with a polydimethylsiloxane film functionalized with amine groups. It can be seen that a considerable number of carbon nanotubes have been removed.
< Experimental Example > Raman analysis
Single-walled carbon nanotubes aligned between the electrodes of the dielectrophoretic device prepared in Example 2 and single-wall carbon nanotubes and dielectrophoretic devices separated into polydimethylsiloxane films functionalized with an amine group in Example 4 Raman analysis was performed on three samples of single-walled carbon nanotubes remaining between the electrodes, and the results are shown in FIG.
The Raman spectrum was measured at an excitation wavelength of 632.8 nm. 160-200cm in the Raman Radial breathing mode - the peak shown at 1 are the metallic single-wall carbon nanotubes, 200-280cm - peak appears at first are known to represent the semiconducting SWNTs.
In the radial breathing mode (RBM) region of the Raman spectrum of the single-walled carbon nanotube before being dispersed in the aqueous solution of sodium dodecyl sulfate (SDS) as the surfactant of Example 1, the metal single-walled carbon nanotubes and semiconductors However, as shown in FIG. 5B, the polydimethylsiloxane film surface-treated with amines exhibiting a positive charge prepared in Example 4 was sandwiched between the electrodes of the post-stamping dielectrophoretic device, SiO 2 / Si substrate As shown in FIG. 5C, in the single-walled carbon nanotube attached on the amine-treated polydimethylsiloxane film, the ratio of the single-walled carbon nanotube to the metallic single-walled carbon nanotube increased. The presence of the tube was confirmed.
Claims (10)
Aligning the single-walled carbon nanotube solution using dielectrophoresis;
Preparing a polydimethylsiloxane film whose surface is functionalized with an amine group;
Pressing and poling a polydimethylsiloxane film functionalized with an amine group on the surface of the single-walled carbon nanotube aligned using the dielectrophoresis; And
Separating the functionalized polydimethylsiloxane film; Lt; / RTI >
The step of preparing the single walled carbon nanotube dispersion solution
Dissolving the surfactant in distilled water;
Dispersing the single walled carbon nanotubes in the distilled water in which the surfactant is dissolved; And
Centrifuging the solution containing the single-walled carbon nanotubes; Further comprising:
Wherein the surfactant is sodium dodecyl sulfate (SDS). ≪ RTI ID = 0.0 > 8. < / RTI >
Wherein the step of centrifuging the solution containing the single-walled carbon nanotubes is performed at 2500 to 3500 rpm for 3 hours to 5 hours
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
The step of aligning the single walled carbon nanotube solution using dielectrophoresis
Wherein the first and second dielectrophoretic electrodes are formed by applying a voltage of 1 kHz to 10 MHz and a voltage of 2 to 5 V to the first and second dielectrophoretic electrodes,
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
The step of producing the functionalized polydimethylsiloxane film comprises:
Mixing a silicone elastomeric base and a silicone elastomeric curing agent in a weight ratio of 10: 1 to 10: 2;
Spin-coating the mixture on the substrate to form a film;
Firing the formed film;
Treating the surface of the fired film with air plasma;
Immersing the film treated with the air plasma in an aqueous solution of a compound containing an amine group; And
Washing with ethanol to remove the compound containing unreacted amine groups; ≪ / RTI >
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
The amine group-containing compound is 3-aminopropyl-triethoxysilane (C 9 H 23 NO 3 Si, APTES)
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
Wherein the calcining step is a calcining in an oven at 900 DEG C to 1000 DEG C for 1 hour
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
Wherein the separated polydimethylsiloxane film comprises metallic single wall carbon nanotubes
A method for separating single walled carbon nanotubes using polydimethylsiloxane film.
Wherein the single-walled carbon nanotubes aligned between the dielectrophoretic electrodes after the stamping step comprise semiconducting single-walled carbon nanotubes.
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| KR20190046252A (en) | 2017-10-25 | 2019-05-07 | 광주과학기술원 | Conjugated molecule for selective separation of carbon nanotubes |
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| US20040038251A1 (en) | 2002-03-04 | 2004-02-26 | Smalley Richard E. | Single-wall carbon nanotubes of precisely defined type and use thereof |
| JP2005104750A (en) | 2003-09-29 | 2005-04-21 | Matsushita Electric Ind Co Ltd | Method for refining nanotube |
| KR100580641B1 (en) | 2004-01-02 | 2006-05-16 | 삼성전자주식회사 | Selection method of semiconducting singlewalled carbon nanotubes |
| KR100773369B1 (en) | 2004-05-12 | 2007-11-05 | 삼성코닝 주식회사 | Method for selective separation of semiconductive carbon nanotubes |
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| G. Hong et al. Angew. Chem. Int. Ed. 2011, Vol. 50, pp. 6819-6823 (2011.06.06.)* |
| 양승보 외, 한국고분자학회 2012년 춘계학술대회 연구논문 초록집, 2PS-153* |
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