KR101743915B1 - Method for aligning carbon nanotubes via solution type carbon nanotubes, method for fabrication of aligned semiconductor carbon nanotube wafer and aligned semiconductor carbon nanotube wafer - Google Patents
Method for aligning carbon nanotubes via solution type carbon nanotubes, method for fabrication of aligned semiconductor carbon nanotube wafer and aligned semiconductor carbon nanotube wafer Download PDFInfo
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- KR101743915B1 KR101743915B1 KR1020150150753A KR20150150753A KR101743915B1 KR 101743915 B1 KR101743915 B1 KR 101743915B1 KR 1020150150753 A KR1020150150753 A KR 1020150150753A KR 20150150753 A KR20150150753 A KR 20150150753A KR 101743915 B1 KR101743915 B1 KR 101743915B1
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- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 243
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
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- C01B31/022—
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- C01B31/0438—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02606—Nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H01L51/0048—
Abstract
According to an embodiment of the present invention, a solution process-based carbon nanotube sorting method includes the steps of: (a) preparing a substrate on which an insulating film is formed; (b) forming an electrode base layer on the insulating layer for electrophoresis; (c) patterning the electrode base layer to form an electrophoretic electrode; And (d) aligning the carbon nanotubes by applying a solution containing carbon nanotubes on the substrate and performing electrophoresis, wherein the electrophoretic electrode comprises a carbon-based electrode, And the carbon nanotubes aligned with the electrophoretic electrode are not generated, so that the carbon nanotube wiring having a uniform thickness can be formed, and the electrophoretic electrode need not be removed in a subsequent process, Can be removed by an etching process during the circuit forming process, thereby simplifying the process and forming a wafer-scale ultrahigh purity carbon nanotube wafer using a purification process.
Description
The present invention relates to a solution process-based carbon nanotube sorting method which can realize a carbon nanotube circuit easily by aligning semiconductor nanotubes that are attracting attention as a next-generation semiconductor material on a substrate based on a solution process and purifying the nanotubes with ultrahigh purity, Type semiconductor carbon nanotube wafer and an alignment type semiconductor carbon nanotube wafer.
Semiconductor carbon nanotubes can replace conventional silicon semiconductors and have high integration and high electrical conductivity, which can be applied to electronic circuits such as memories such as DRAM, nonvolatile memory, and RF circuits and biosensors. However, Since it is not easy to align such semiconductor carbon nanotubes so as to have a constant thickness and a fine line width without a step, there is a technical limitation to form ultra high purity carbon nanotube wiring with a wafer scale of at least 3 to 12 inches come.
The following
A problem to be solved by the present invention is to form a carbon nanotube wire having a uniform thickness without causing a step difference and to form a wafer scale, and to separately form an electrophoresis (DEP) electrode The present invention provides a solution process-based carbon nanotube sorting method which can simplify the process because it can be collectively removed by a subsequent etching process in a circuit forming process without having to be removed in a subsequent process of the present invention.
Another problem to be solved by the present invention is to provide a method of forming a carbon nanotube wire having a uniform thickness without any step difference and forming the wafer scale, Which can simplify the process because it can be collectively removed by an etching process at a later circuit forming process without having to be removed, and an ultra-high purity carbon nanotube wafer of wafer scale can be formed using a purification process And a method for manufacturing a carbon nanotube wafer.
Another problem to be solved by the present invention is that the carbon nanotubes are perfectly aligned and no step is formed so that the carbon nanotube wiring having a uniform thickness can be formed on the wafer scale, and the electrophoretic electrode is removed And it is an object of the present invention to provide an alignment type semiconductor carbon nanotube wafer in which waferscale ultra high purity carbon nanotube wirings are formed by a purification process that can be collectively removed by an etching process at a later circuit forming process .
According to an aspect of the present invention, there is provided a method for aligning a solution-based carbon nanotube according to an embodiment of the present invention,
(a) preparing a substrate on which an insulating film is formed;
(b) forming an electrode base layer on the insulating layer for electrophoresis;
(c) patterning the electrode base layer to form an electrophoretic electrode; And
(d) aligning the carbon nanotubes by applying a solution containing carbon nanotubes on the substrate and performing electrophoresis,
The electrophoresis electrode comprises a carbon based electrode.
In the method of aligning a carbon nanotube according to an embodiment of the present invention, the carbon-based electrode may be an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene May be any one selected from the group consisting of
Also, in the solution process-based carbon nanotube sorting method according to an embodiment of the present invention, the carbon based electrode is an electrode formed of graphene,
The step (b)
(i1) preparing a graphene / metal catalyst substrate formed by chemical vapor deposition;
(i2) pre-treating the graphene / metal catalyst substrate;
(i3) forming a functional support layer on the graphene;
(i4) attaching an elastic stamp to the support layer;
(i5) separating the support layer / graphene from the metal catalyst substrate using the elastic stamp;
(i6) disposing the supporting layer / graphene attached to the elastic stamp on the insulating film;
(i7) separating the elastomeric stamp from the support layer / graphene; And
(i8) removing the support layer to form a graphene-based electrode base layer.
Also, in the solution process-based carbon nanotube sorting method according to an embodiment of the present invention, the carbon-based electrode is an electrode formed of carbon nanotubes,
The step (b)
(j1) performing an ozone treatment on the insulating film for a predetermined time to change the insulating film to a hydrophilic state;
(j2) subjecting the insulating film to a poly-L-lysine solution-based surface treatment;
(j3) dipping the substrate on which the insulating film is formed in a solution containing carbon nanotubes for a predetermined time;
(j4) removing the substrate from the solution and cleaning the substrate; And
(j5) drying the substrate to form a carbon nanotube-based electrode base layer.
In addition, in the solution process-based carbon nanotube sorting method according to an embodiment of the present invention, the carbon based electrode is an electrode formed of a composite of carbon nanotubes and graphene,
The step (b)
(k1) coating a solution containing carbon nanotubes on a copper substrate, and then synthesizing graphene to prepare a composite of carbon nanotubes and graphene;
(k2) pre-treating the carbon nanotube-graphene composite / copper substrate;
(k3) forming a functional support layer on the carbon nanotube-graphene composite;
(k4) attaching an elastic stamp to the support layer;
(k5) separating the support layer / carbon nanotube-graphene composite from the copper substrate using the elastic stamp;
(k6) disposing the support layer / carbon nanotube-graphene composite attached to the elastic stamp on the insulating layer;
(k7) separating the elastomeric stamp from the support layer / carbon nanotube-graphene composite; And
(k8) removing the support layer to form a composite base electrode layer of carbon nanotubes and graphene
In addition, the solution process-based carbon nanotube sorting method according to an embodiment of the present invention is characterized in that after step (b)
(b1) forming an alignment mark on the electrode base layer,
After the step (d)
(d1) evaporating the solution; And
(d2) cleaning the substrate to remove the remaining carbon nanotubes.
In addition, in the solution process-based carbon nanotube sorting method according to an embodiment of the present invention, the solution contains 0.01 to 0.1% by weight of the carbon nanotubes, and the carbon nanotubes contained in the solution include a semiconductor component It can be more than 80%.
In addition, in the solution process-based carbon nanotube sorting method according to an embodiment of the present invention, the substrate includes a silicon substrate,
The insulating film may be any one selected from the group consisting of silicon oxide (SiO 2 ), silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 ).
According to another aspect of the present invention, there is provided a method of manufacturing an aligned semiconductor carbon nanotube wafer,
(a) preparing a substrate on which an insulating film is formed;
(b) forming an electrode base layer on the insulating layer for electrophoresis;
(c) patterning the electrode base layer to form an electrophoretic electrode;
(d) aligning the carbon nanotubes by applying a solution containing carbon nanotubes on the substrate and performing electrophoresis; And
(e) conducting a purification process to increase the purity of the carbon nanotube,
The electrophoresis electrode comprises a carbon based electrode.
In the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon-based electrode may include an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene And the like.
In the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon-based electrode is an electrode formed of graphene,
The step (b)
(i1) preparing a graphene / metal catalyst substrate formed by chemical vapor deposition;
(i2) pre-treating the graphene / metal catalyst substrate;
(i3) forming a functional support layer on the graphene;
(i4) attaching an elastic stamp to the support layer;
(i5) separating the support layer / graphene from the metal catalyst substrate using the elastic stamp;
(i6) disposing the supporting layer / graphene attached to the elastic stamp on the insulating film;
(i7) separating the elastomeric stamp from the support layer / graphene; And
(i8) removing the support layer to form a graphene-based electrode base layer.
In the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon-based electrode is an electrode formed of carbon nanotubes,
The step (b)
(j1) performing an ozone treatment on the insulating film for a predetermined time to change the insulating film to a hydrophilic state;
(j2) subjecting the insulating film to a poly-L-lysine solution-based surface treatment;
(j3) dipping the substrate on which the insulating film is formed in a solution containing carbon nanotubes for a predetermined time;
(j4) removing the substrate from the solution and cleaning the substrate; And
(j5) drying the substrate to form a carbon nanotube-based electrode base layer.
In the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon-based electrode is an electrode formed of a composite of carbon nanotubes and graphene,
The step (b)
(k1) coating a solution containing carbon nanotubes on a copper substrate, and then synthesizing graphene to prepare a composite of carbon nanotubes and graphene;
(k2) pre-treating the carbon nanotube-graphene composite / copper substrate;
(k3) forming a functional support layer on the carbon nanotube-graphene composite;
(k4) attaching an elastic stamp to the support layer;
(k5) separating the support layer / carbon nanotube-graphene composite from the copper substrate using the elastic stamp;
(k6) disposing the support layer / carbon nanotube-graphene composite attached to the elastic stamp on the insulating layer;
(k7) separating the elastomeric stamp from the support layer / carbon nanotube-graphene composite; And
(k8) removing the support layer to form a composite base electrode layer of carbon nanotubes and graphene.
Further, in the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, after the step (b)
(b1) forming an alignment mark on the electrode base layer,
After the step (d)
(d1) evaporating the solution; And
(d2) cleaning the substrate to remove the remaining carbon nanotubes.
Further, in the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the step (e)
And then performing a purification process using a heat flow capillary phenomenon based carbon nanotube purification method or a microwave based carbon nanotube purification method.
In addition, in the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the solution contains the carbon nanotubes in an amount of 0.01 to 0.1% by weight, and the carbon nanotubes contained in the solution include a semiconductor component Can be more than 80%.
Further, in the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the substrate may include a silicon substrate,
The insulating film may be any one selected from the group consisting of silicon oxide (SiO 2 ), silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 ).
According to another aspect of the present invention, there is provided an aligned semiconductor carbon nanotube wafer,
Substrate having insulating film:
An electrophoretic electrode formed on the insulating film; And
And carbon nanotube wirings including bundle-type carbon nanotubes aligned between the electrophoretic electrodes,
The electrophoresis electrode comprises a carbon based electrode.
In the alignment type semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon based electrode is formed of an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene Lt; / RTI >
According to the method for aligning carbon nanotubes based on a solution process, the method for manufacturing an aligned semiconductor carbon nanotube wafer, and the aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon nanotubes can be perfectly aligned, The carbon nanotube wiring having a constant thickness can be formed on the wafer scale because no step is formed between the aligned carbon nanotubes and the electrophoretic electrode can be formed in a subsequent step, The process can be simplified, and ultra-high purity carbon nanotube wafers of wafer scale can be formed by using the purification process.
FIGS. 1 to 6 are process drawings of a solution process-based carbon nanotube sorting method according to an embodiment of the present invention.
7 is a view showing an alignment type semiconductor carbon nanotube wafer according to an embodiment of the present invention.
8A is a view illustrating a carbon nanotube arrayed by a solution process-based carbon nanotube sorting method according to an embodiment of the present invention.
Figure 8b shows a carbon nanotube aligned by a conventional solution process based carbon nanotube alignment method using a metal electrode as an electrophoretic electrode.
9A to 9H are diagrams for explaining a method of forming an electrode base layer for electrophoresis using graphene.
10 and 11 are views for explaining a method of purifying carbon nanotubes based on heat flow capillary phenomenon.
12 is a view for explaining a microwave-based carbon nanotube purification method.
13 is an electron micrograph of an aligned carbon nanotube when the metal electrode is used as an electrophoretic electrode.
14 is an electron micrograph of an aligned carbon nanotube when the carbon nanotube electrode is used as an electrophoresis electrode.
15 is an electron micrograph of an aligned carbon nanotube when a composite of carbon nanotubes and graphene is used as an electrophoresis electrode.
BRIEF DESCRIPTION OF THE DRAWINGS The objectives, specific advantages and novel features of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.
Prior to that, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may properly define the concept of the term in order to best explain its invention Should be construed in accordance with the principles and the meanings and concepts consistent with the technical idea of the present invention.
It should be noted that, in the present specification, the reference numerals are added to the constituent elements of the drawings, and the same constituent elements are assigned the same number as much as possible even if they are displayed on different drawings.
Also, the terms "first", "second", "one side", "other side", etc. are used to distinguish one element from another, It is not.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following description of the present invention, a detailed description of known arts which may unnecessarily obscure the gist of the present invention will be omitted.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 to 6 are process diagrams of a solution process-based carbon nanotube sorting method according to an embodiment of the present invention.
Referring to FIG. 1, a
In the embodiment of the present invention, the
The insulating
Referring to FIG. 2, an
The
The method of forming the
Referring to FIG. 3, an
Referring to FIG. 4, an
Referring to FIG. 5, a solution (not shown) containing carbon nanotubes is applied on the
In one embodiment of the present invention, the solution contains 0.01 to 0.1% by weight of the carbon nanotubes, the permeability is about 80%, the sheet resistance is about 400 to 500 ohm / sqr, The semiconductor component of the tube is at least 80%, the average length of the carbon nanotubes is about 10 nm, and the solution is a solution dispersed in a H 2 O solution together with a surfactant.
In addition, the carbon nanotubes included in the solution may include single-walled carbon nanotubes or multi-walled carbon nanotubes.
1 to 5, a carbon nanotube wiring in which the
In order to facilitate understanding, it is shown that there is a predetermined space between the
Referring to FIG. 6, a
As shown in FIGS. 1 to 6, according to an embodiment of the present invention, the
In addition, since the
On the other hand, the
In addition, since the
Now, a method for forming the
First, a method of forming the
9A to 9H are views for explaining a method of forming a graphene-based
Referring to FIG. 9A, a
Referring to FIG. 9C, a
Referring to FIG. 9D, an
9E, the
Referring to FIG. 9F, the supporting
Referring to FIG. 9G, the
Referring to FIG. 9H, the
Next, a method of forming a carbon nanotube-based
The method of forming the carbon nanotube-based
Next, the insulating
Next, the
Next, the
Next, a method of forming a composite-based
First, after coating a solution containing carbon nanotubes on a copper (Cu) base, graphene is synthesized to prepare a composite of carbon nanotubes and graphene.
The subsequent steps are similar to the method of forming the
Next, a composite of the carbon nanotubes and the graphene / copper substrate is pretreated, and a functional support layer is formed on the composite of the carbon nanotubes and the graphene.
Next, an elastic body stamp is attached to the support layer, and a composite of the support layer / carbon nanotube and graphene is separated from the copper base material by using the elastic body stamp.
Next, a composite of the support layer / carbon nanotube and graphene attached to the elastic stamp is disposed on the insulating
Next, the support layer is removed to form a composite electrode-based
Meanwhile, in the method of manufacturing an aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, in addition to the solution process-based carbon nanotube sorting method according to one embodiment of the present invention shown in FIGS. 1 to 6, And further performing a purification process to increase the purity of the nanotubes.
The purification process may be performed using the heat flow capillary phenomenon-based carbon nanotube purification method shown in FIGS. 10 and 11, or may be performed using the microwave-based carbon nanotube purification method shown in FIG. 12 .
Using the heat flow capillary phenomenon-based carbon nanotube purification method shown in FIGS. 10 and 11, it is possible to obtain the unique migration of semiconductor carbon nanotubes while maintaining the alignment type semiconductor carbon nanotube structure, which is a favorable structure in the electronic circuit construction, It is possible to obtain pure semiconductor-type carbon nanotubes having a purity of 99% or more and having almost no characteristic deterioration and population loss.
In the method of refining carbon nanotubes based on the heat flow capillary phenomenon shown in FIGS. 10 and 11, an organic material is deposited on a substrate on which semiconductor carbon nanotubes and metal carbon nanotubes are formed, and then the metal carbon nanotubes are selectively heated The metal tantalum carbon nanotubes are etched and removed, and the organic material is removed to obtain only pure semiconductor carbon nanotubes.
On the other hand, the microwave-based carbon nanotube purification method shown in FIG. 12 is superior to the heat flow capillary phenomenon-based carbon nanotube purification method of FIG. 10 and FIG. 11, which is a selective trench- And can be applied to a wafer-based large area.
In the microwave-based carbon nanotube purification method shown in FIG. 12, a microwave is simply applied to an aligned carbon nanotube in contact with a metal material having a low work function to increase a selective eddy current to a metal carbon nanotube And the metallic carbon nanotubes are removed to obtain pure semiconductor-type carbon nanotubes with an ultra-high purity of 99.9925% or more.
As shown in FIG. 7, after the purification process, the
The alignment type semiconductor carbon nanotube wafer according to an embodiment of the present invention shown in FIG. 7 includes a
In addition, the
The carbon-based electrode may be any one selected from the group consisting of an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene.
As shown in FIG. 13, in the alignment state of the carbon nanotubes aligned according to a general carbon nanotube alignment method using a metal electrode as an electrophoretic electrode, carbon nanotubes are intensively present at the edge portion of the metal electrode, The alignment of the tubes is not so good.
On the other hand, in the embodiment of the present invention in which a carbon nanotube electrode is used as an electrophoresis electrode as shown in FIG. 14 or a composite of carbon nanotubes and graphene is used as an electrophoresis electrode as shown in FIG. 15 It can be seen that the aligned carbon nanotubes are aligned in a perfectly perfectly aligned manner.
According to the method for aligning carbon nanotubes based on a solution process, the method for manufacturing an aligned semiconductor carbon nanotube wafer, and the aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, the carbon nanotubes can be perfectly aligned, The carbon nanotube wiring having a uniform thickness can be formed because no step is formed between the aligned carbon nanotubes and the electrophoretic electrode is not removed by a separate subsequent process, It is possible to simplify the process and to form a ultra high purity carbon nanotube wafer on a wafer scale using a high purity purification process.
In addition, according to the method for aligning a solution-based carbon nanotube, the method for manufacturing an aligned semiconductor carbon nanotube wafer, and the aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, After the alignment of the carbon nanotubes, the yield and the processability of the subsequent purification process can be improved because the thin film is formed of a thin film having a thickness of 1 nm to 5 nm.
For example, in the refining process, the organic thin film is deposited on the electrophoresis electrode and the aligned carbon nanotubes. When a metal electrode is used as the electrophoresis electrode, the thickness of the metal electrode is as thick as about 20 nm to 25 nm , The thickness of the organic thin film deposited on the metal electrode and the aligned carbon nanotubes should be at least 30 nm. If the thickness of the organic thin film is increased, the width or the interval of the trench must be as wide as the thickness of the organic thin film when the selective trench is formed in order to remove the metal carbon nanotubes during the refining process. The semiconductor carbon nanotubes near the metal carbon nanotubes to be removed can be removed together with the metal carbon nanotubes by the trenches, resulting in a reduction in the yield of the purification process.
On the other hand, according to the method for aligning a solution-based carbon nanotube, the method for manufacturing an aligned semiconductor carbon nanotube wafer, and the aligned semiconductor carbon nanotube wafer according to an embodiment of the present invention, And the electrode of the carbon component is formed of a thin film having a thickness of several nm, for example, 1 nm to 5 nm, it is possible to improve the process resolution and yield of the subsequent purification process after aligning the carbon nanotubes have.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It is clear that the present invention can be modified or improved.
It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
100: substrate 102: insulating film
104: electrode base layer 106: alignment mark
108: electrophoresis electrode 110: carbon nanotube
112: cleaning liquid 300: substrate
302: metal catalyst 304: graphene
306: Support layer 308: Elastic body stamp
Claims (19)
(b) forming an electrode base layer on the insulating layer for electrophoresis;
(c) patterning the electrode base layer to form an electrophoretic electrode; And
(d) aligning the carbon nanotubes by applying a solution containing carbon nanotubes on the substrate and performing electrophoresis,
Wherein the electrophoresis electrode comprises a carbon based electrode,
Wherein the carbon-based electrode is any one selected from the group consisting of an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene.
The carbon based electrode is an electrode formed of graphene,
The step (b)
(i1) forming graphene on a substrate having a metal catalyst formed thereon;
(i2) pre-treating the substrate on which the graphene and the metal catalyst are formed;
(i3) forming a functional support layer on the graphene;
(i4) attaching an elastic stamp to the support layer;
(i5) separating the support layer / graphene from the substrate on which the metal catalyst is formed using the elastic stamp;
(i6) disposing the supporting layer / graphene attached to the elastic stamp on the insulating film;
(i7) separating the elastomeric stamp from the support layer / graphene; And
(i8) removing the support layer to form a graphene-based electrode base layer.
The carbon-based electrode is an electrode formed of carbon nanotubes,
The step (b)
(j1) performing an ozone treatment on the insulating film for a predetermined time to change the insulating film to a hydrophilic state;
(j2) subjecting the insulating film to a poly-L-lysine solution-based surface treatment;
(j3) dipping the substrate on which the insulating film is formed in a solution containing carbon nanotubes for a predetermined time;
(j4) removing the substrate from the solution and cleaning the substrate; And
(j5) drying the substrate to form a carbon nanotube-based electrode base layer.
The carbon-based electrode is an electrode formed of a composite of carbon nanotubes and graphene,
The step (b)
(k1) coating a solution containing carbon nanotubes on a copper substrate, and then synthesizing graphene to prepare a composite of carbon nanotubes and graphene;
(k2) pre-treating the carbon nanotube-graphene composite / copper substrate;
(k3) forming a functional support layer on the carbon nanotube-graphene composite;
(k4) attaching an elastic stamp to the support layer;
(k5) separating the support layer / carbon nanotube-graphene composite from the copper substrate using the elastic stamp;
(k6) disposing the support layer / carbon nanotube-graphene composite attached to the elastic stamp on the insulating layer;
(k7) separating the elastomeric stamp from the support layer / carbon nanotube-graphene composite; And
(k8) removing the support layer to form a composite-based electrode base layer of carbon nanotubes and graphene.
After the step (b)
(b1) forming an alignment mark on the electrode base layer,
After the step (d)
(d1) evaporating the solution; And
(d2) cleaning the substrate to remove the remaining carbon nanotubes.
Wherein the solution contains 0.01 to 0.1% by weight of the carbon nanotubes,
Wherein the carbon nanotubes contained in the solution have a semiconductor component of 80% or more.
Wherein the substrate comprises a silicon substrate,
Wherein the insulating film is any one selected from the group consisting of silicon oxide (SiO 2 ), silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 ) Way.
(b) forming an electrode base layer on the insulating layer for electrophoresis;
(c) patterning the electrode base layer to form an electrophoretic electrode;
(d) aligning the carbon nanotubes by applying a solution containing carbon nanotubes on the substrate and performing electrophoresis; And
(e) conducting a purification process to increase the purity of the carbon nanotube,
Wherein the electrophoresis electrode comprises a carbon based electrode,
Wherein the carbon-based electrode is any one selected from the group consisting of an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene.
The carbon based electrode is an electrode formed of graphene,
The step (b)
(i1) forming graphene on a substrate having a metal catalyst formed thereon;
(i2) pre-treating the substrate on which the graphene and the metal catalyst are formed;
(i3) forming a functional support layer on the graphene;
(i4) attaching an elastic stamp to the support layer;
(i5) separating the support layer / graphene from the substrate on which the metal catalyst is formed using the elastic stamp;
(i6) disposing the supporting layer / graphene attached to the elastic stamp on the insulating film;
(i7) separating the elastomeric stamp from the support layer / graphene; And
(i8) removing the support layer to form a graphene-based electrode base layer.
The carbon-based electrode is an electrode formed of carbon nanotubes,
The step (b)
(j1) performing an ozone treatment on the insulating film for a predetermined time to change the insulating film to a hydrophilic state;
(j2) subjecting the insulating film to a poly-L-lysine solution-based surface treatment;
(j3) dipping the substrate on which the insulating film is formed in a solution containing carbon nanotubes for a predetermined time;
(j4) removing the substrate from the solution and cleaning the substrate; And
(j5) drying the substrate to form a carbon nanotube-based electrode base layer.
The carbon-based electrode is an electrode formed of a composite of carbon nanotubes and graphene,
The step (b)
(k1) coating a solution containing carbon nanotubes on a copper substrate, and then synthesizing graphene to prepare a composite of carbon nanotubes and graphene;
(k2) pre-treating the carbon nanotube-graphene composite / copper substrate;
(k3) forming a functional support layer on the carbon nanotube-graphene composite;
(k4) attaching an elastic stamp to the support layer;
(k5) separating the support layer / carbon nanotube-graphene composite from the copper substrate using the elastic stamp;
(k6) disposing the support layer / carbon nanotube-graphene composite attached to the elastic stamp on the insulating layer;
(k7) separating the elastomeric stamp from the support layer / carbon nanotube-graphene composite; And
(k8) removing the support layer to form a composite electrode-based electrode base layer of carbon nanotubes and graphene.
After the step (b)
(b1) forming an alignment mark on the electrode base layer,
After the step (d)
(d1) evaporating the solution; And
(d2) cleaning the substrate to remove the remaining carbon nanotubes.
The step (e)
A method of manufacturing an aligned semiconductor carbon nanotube wafer, comprising the step of performing a purification process using a heat flow capillary phenomenon-based carbon nanotube purification method or a microwave-based carbon nanotube purification method.
Wherein the solution contains 0.01 to 0.1% by weight of the carbon nanotubes,
Wherein the carbon nanotubes contained in the solution have a semiconductor component of 80% or more.
Wherein the substrate comprises a silicon substrate,
Wherein the insulating film is any one selected from the group consisting of silicon oxide (SiO 2 ), silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), and hafnium oxide (HfO 2 ) Gt;
An electrophoretic electrode formed on the insulating film; And
And carbon nanotube wirings including bundle-type carbon nanotubes aligned between the electrophoretic electrodes,
Wherein the electrophoresis electrode comprises a carbon based electrode,
Wherein the carbon-based electrode is any one selected from the group consisting of an electrode formed of carbon nanotubes, an electrode formed of graphene, and an electrode formed of a composite of carbon nanotubes and graphene.
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