KR101741338B1 - Heterostructures phosphorene sheets comprising phosphorene and boron nitride - Google Patents
Heterostructures phosphorene sheets comprising phosphorene and boron nitride Download PDFInfo
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- KR101741338B1 KR101741338B1 KR1020150184951A KR20150184951A KR101741338B1 KR 101741338 B1 KR101741338 B1 KR 101741338B1 KR 1020150184951 A KR1020150184951 A KR 1020150184951A KR 20150184951 A KR20150184951 A KR 20150184951A KR 101741338 B1 KR101741338 B1 KR 101741338B1
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- 229910052582 BN Inorganic materials 0.000 title claims abstract description 10
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical group [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 12
- UNQNIRQQBJCMQR-UHFFFAOYSA-N phosphorine Chemical compound C1=CC=PC=C1 UNQNIRQQBJCMQR-UHFFFAOYSA-N 0.000 claims description 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 7
- 230000003993 interaction Effects 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- GWLJTAJEHRYMCA-UHFFFAOYSA-N phospholane Chemical compound C1CCPC1 GWLJTAJEHRYMCA-UHFFFAOYSA-N 0.000 claims description 2
- 230000026731 phosphorylation Effects 0.000 claims 1
- 238000006366 phosphorylation reaction Methods 0.000 claims 1
- JHYNEQNPKGIOQF-UHFFFAOYSA-N 3,4-dihydro-2h-phosphole Chemical compound C1CC=PC1 JHYNEQNPKGIOQF-UHFFFAOYSA-N 0.000 abstract description 42
- 230000003287 optical effect Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 58
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000002356 single layer Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 229910021389 graphene Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 229960002017 echothiophate Drugs 0.000 description 4
- BJOLKYGKSZKIGU-UHFFFAOYSA-N ecothiopate Chemical compound CCOP(=O)(OCC)SCC[N+](C)(C)C BJOLKYGKSZKIGU-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 210000000784 arm bone Anatomy 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000004698 pseudo-potential method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0821—Oxynitrides of metals, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
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- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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Abstract
The present invention relates to a phospholene layer in which the oxidation and the anisotropic properties of an electric and optical anisotropic properties are maintained or improved while the oxidation of phospholines is suppressed; And a layer of hexagonal boron nitride (h-BN) deposited on one or both sides of the phospholene layer.
Description
The present invention relates to a heterostructure phospholinic sheet in which the oxidation and the anisotropic properties of the electrical and optical anisotropic properties are maintained or improved while the oxidation of the phospholin is suppressed.
Phosphorins are attracting much attention because of their special physical properties. Phosphorine is a monolayer of black phosphorus. Among the various types of 2D materials, phospholines are of special interest because they have an intrinsic direct band gap at the Γ-point. In addition, several layers of phospholines have high charge mobility of 300-1000 cm 2 V -1 s -1 . This value is smaller than that of graphene, but the mobility of phospholines is much higher than that of other 2D materials. In addition, phosphoryl has anisotropic electrical and optical properties for the zigzag and armchair directions. Because of its large mobility, direct transition bandgap, quasi-electrical and optical properties, phospholines can be superior to graphene for many purposes.
Despite these promising physical properties found in phospholines, phosphorus has been reported to suffer from oxidative degradation in the surrounding environment. Therefore, finding a way to protect the inherent physical properties of phospholines is an important issue. Thus, the present inventors have found that this can be achieved by capping or encapsulating the phosphoryl layer.
Generally, the 2D material has weak van der Waals interlay interactions, so that a structure with few layers is obtained. Indeed, with the development of manufacturing technology, different 2D materials can be artificially integrated into the 2D helix structure to form layers of specific thickness and order. For example, a graphene / phospholene bilayer, a phosphorus / MoS2 monolayer p-n diode, a phospholin / TiO2 hybrid photocatalyst, and a graphene / h-BN phospholane based field effect transistor can be developed. Indeed, a phospholinic device encapsulated in air-stable h-BN encapsulation has been demonstrated. However, a thorough investigation of the effect of the h-BN layer for encapsulation or capping in the phosphorein properties is still lacking.
The present invention aims at maintaining or improving electrical and optical anisotropic properties while inhibiting oxidation of phospholines.
The present invention relates to a phospholin layer; And a layer of hexagonal boron nitride (h-BN) deposited on one or both sides of the phosphoryl layer. The present invention provides a phospholine sheet comprising a hexagonal boron nitride (h-BN) layer deposited on both sides of a phospholene layer.
And the interlayer bonding of the phospholene layer and the hexagonal boron nitride is bonded by van der Waals interaction.
The phosphorous sheet is characterized by having an increased bandgap compared to the zero-point phosphorous layer.
And a hexagonal boron nitride (h-BN) layer deposited on two or more layers on one side of the phosphor sheet and two or more layers on the other side.
The above-mentioned phosphorylate sheet has the oxidation inhibiting property of phosphoryl.
The phosphorous sheet of the present invention can be used as a photo-electronic device.
The phospholene / BN (1ML) heterostructure of the present invention exhibited an increased bandgap of 0.15 eV over the bandgap of zero-defect phospholin. In the case of BN (1ML) / phospholin / BL (1ML), another form of the present invention also showed an increased band gap of 0.31 eV. The thickness of h-BN did not show any increase in bandgap beyond 4ML. Surprisingly, anisotropic effective mass and optical properties are maintained in the heterostructure of the present invention.
Figure 1 (a) is three orthographic views of the h-BN / phospholin double layer. 0.83 A is the distance between the P and B elements along the x direction. The interlayer distance is 3.37 Å. (b) are three basic right-angled views of the BN / Phosphorine / BN triplet. (c) shows the energy difference of the series of structures in accordance with the relative displacement in the x (△ x) and y (△ y) direction. (d) shows the binding energies of the BN / phospholine bilayers with interlayer distance.
Figure 2 shows the calculated band structure, (a) for a single-phase unphosphorous phosphorous, (b) for a BN / phospholine double layer and (c) for a BN / phosphoryl / BN triple layer. The black and red curves represent the PBE and HSE06 results, respectively.
Figure 3 (a) shows the calculated (HSE06 method) total density of the phospholin, free h-BM, BN / phospholin bilayer and BN / phosphoryl / BN triplet system states (TDOS).
4 is an image portion of a frequency-dependent dielectric function in a phosphorescent monolayer and a heterostructure for polarized incident light along (a) the armchair (y) direction and (b) the zigzag (x) direction. The dashed line is the tangent line of the first absorption peak; They provide the position of the band edge for that case. The extrapolated values are shown in small boxes. (b) is a zoom in picture within an energy range of 2.7 to 3.5 eV. The position of the band edge was determined by using the free phospholin, phospholin / BN (1ML), BN (1ML) / phospholyne / BN- (1ML), BN (1ML) / phosphoryl / BN 1.65, 1.82, 1.82, and 1.82 eV for the BN (2ML) / Phosphorine / BN (2ML) system, respectively. For zigzag polarized incident light, the positions of the system are 3.14, 2.96, 2.96, 2.82, and 2.79 eV.
5 is a light absorption spectrum of a phosphore single layer and a heterostructure with respect to incident light polarized along (a) the armchair (y) direction and (b) the zigzag (x) direction.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the term "comprises" or "having ", etc. is intended to specify that there is a feature, step, operation, element, part or combination thereof described in the specification, , &Quot; an ", " an ", " an "
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
All calculations used in the present invention were performed using a Vienna ab initio simulation package (VASP). A generalized gradient approximation of PBE (Perdew-Burk-Ernzerhof) was used. The valence electrons were clearly processed and their interaction with the ionic core was depicted by the projector augmented wave (PAW) pseudopotential method. To describe the interlayer interactions of the layered materials, we included the counterbalancing action of the optB88-vdW method. A cutoff energy of 500 eV was used and a vacuum region greater than 16 Å was applied. All systems were fully optimized until the residual Hellmann-Feynman force on each atom was less than 0.01 eV / Å. Brillouin domain integration was performed using Monkhorst-Pack k-point sampling of 3 x 7 k-mesh. The band structure and optical properties were calculated using the HSE06 hybrid function.
In the present invention, the bilayer heterostructure consists of one layer of a phospholin layer and one layer of h-BN layer, while the sandwich heterostructure is an encapsulated structure of a single layer of phospholin layers of h-BN layers. In order to solve the lattice mismatch of the heterostructure, the (3 × 1) simple lattice phosphor layer and the (4 × 1) initial orthorhombic lattice h-BN layer were selected. The lattice constants of the newly constructed lattice were selected and matched to a 3 x 1 phosphorous lattice. Thus, the lattice constants of the heterostructures were a = 9.90 A (zigzag direction) and b = 4.62 A (armchair direction), resulting in ~ 1% overall strain.
Figures 1 (a) and (b) show three basic orthographic views of the optimized geometry of a single layer and a sandwiched three-layered heterostructure. To obtain the most stable adsorption configuration of the two-layer structure, the relaxation of the formed structure was initiated from several initial positions of the phosphoryl layer relative to the fixed h-BN layer. In the bilayer structure, Figure 1a was the most stable adsorption structure of the bilayer structure. To confirm this, the total energy was calculated by moving the phospholin layer to the h-BN layer by consecutive finite displacements along the x- and y-directions.
Figure 1c shows the evolution of the total energy difference with in-plane displacement. The total energy in the structure a in Fig. 1 is set to 0 as a reference. There was no significant energy difference (less than 2 meV) when moving the phospholin layer along the x-direction (zigzag direction), and it was like a frictionless motion. However, the energy difference was notable in the y-direction (arm-bone direction). In the vertical movement, the total energy change at d in Fig. 1 was calculated and the total energy minimum was obtained at an interlayer distance of 3.37 Å. Therefore, FIG. 1A confirms the actual total energy minimum value. Nevertheless, when the phospholine was displaced in the y-direction to 1 Å, the energy difference was only about 0.1 eV. Phosphorus layer means that it can be trapped at a different position from the lowest energy absorption position in the growth phase at the limiting temperature. Indeed, band structures were computed in several different geometries and no significant changes were found compared to those of equilibrium geometry. In this equilibrium adsorption structure shown in Fig. 1 (a), the binding energy between the h-BN sheet and the phospholene was calculated using the relational expression [E b = [E P / B N - (E P + E BN )]. Where E (P / BN ) , E P , and E BN refer to the total energies of the bilayer heterostructure, the isolated single layer phospholin, and the liberated h-BN layer, respectively. Since the h-BN layer has a total of 16 atoms including N and B atoms, the binding energy of the double layer per atom of h-BN is 65 meV at the equilibrium distance. In the triple layer, binding energy of the same size was obtained. Moreover, similar values of binding energy were obtained in thicker films. This value of binding energy has the same size as that observed in other van der Waals crystals such as graphite, graphene / phospholene heterostructure and bulk hexaedonal boron nitride.
Figures 2 (a) to 2 (c) show the calculated band structures of the zero-point phosphorous, bilayer and triple layer systems, respectively. In the liberated phospholin layer, the bandgap was 0.89 eV for PBE and 1.59 eV for the hybrid functional method (HSE06). In general, this hybrid method increases the band gap by 0.7 - 0.8 eV compared to the band gap using the PBE method in the phosphorescence system. The calculated bandgaps for single layer phospholines are shown in the previous paper (Han, X .; Morgan Stewart, H.; Shevlin, SA; Catlow, CRA; Guo; ZX Strain and Orientation Modulated Bandgaps and Effective Masses of Phosphorus Nanoribbons. Nano Lett. 2014, 14 (8), 4607-4614). In the bilayer heterostructure, the direct energy bandgap was 1.04 eV and 1.74 eV, respectively, by PBE and the hybrid method. Thus, the h-BN substrate contributed to increasing the band gap by 0.15 eV. Nonetheless, the spectral shape of the band-structure near the CBM (conduction band minimum) and VBM (valence band maximum) was nearly identical to that of the liberated phosphorescence layer. Thus, the electromigration properties of the bilayer heterostructure will still be dominated by phosphoryl. In the triple layer heterostructure, the bandgap was increased by 1.20 eV and 1.90 eV respectively by the PBE and HSE06 methods. Even with the increased gap, the normal band shape was maintained again. This will be an important feature in the application of phospholin-based devices because the h-BN layer protects the phospholines from degradation in the surrounding environment and does not significantly interfere with the intrinsic electrical structure of the phospholines.
The present inventors have found that the band gap of the phosphorescence layer is increased due to the h-BN layer and each h-BN layer contributes to the increase of the band gap of about 0.15 eV. The effect of bandgap on the h-BN thickness was investigated. Thus, the inventors have changed BN thickness on the upper and lower sides such as BN (1ML) / phosphoryl / BN (2ML) and BN (2ML) / phosphoryl / BN (2ML) . In all these systems, the HSE06 method had a band gap of 1.90 eV. Thus, the bandgaps found in the BN (1ML) / phosphoryl / BN (1ML) structure were saturated values. The spectral shapes of the band structures of these two systems were almost identical to those of BN (1ML) / phosphoryl / BN (1ML). This result shows that BN (1ML) / phosphoryl / BN (1ML) is well protected and another h-BN layer does not interact strongly with the phospholene layer.
Figure 3 shows the calculated density of states (DOS) of a zero-phosphorous layer, phospholin / BN (1ML) and BN (1ML) / phosphoryl / BN (1ML). As shown, in the hybridized system, phosphorus atoms contributed primarily to low-lying bands near the CBM and VBM. In particular, the low-valence band consists mainly of the pz orbital.
Phosphorus is known to have this isotropic electrical transmission characteristic. Therefore, it is important to identify whether the effective mass and isotropic properties are affected by the h-BN layer. To clarify this, the effective mass was estimated from the band structure calculated using the HSE06 method. For this effective mass estimation in the present application, the inventors have assumed a quadratic band dispersion near the CBM and VBM. The calculated results are shown in Table 1.
[Table 1]
Table 1 is the calculated ratio of the effective mass of holes (m b * / m e ) and electrons (m e * / m e ) in the zero-point phospholines and heterostructures. In the zero-point phospholin, the effective mass of holes and electron charge along the Γ-X direction (zigzag direction) is much heavier than that along the Γ-Y direction (armchair direction), and the estimated effective mass is quite close to the previous result. In the heterostructure, the effective mass in conduction and valence electron bands has been shown to increase due to capping of the BN layer. As shown in FIG. 2, the band dispersion according to the Γ-Y direction (the arm body direction) shows a well-behaved secondary characteristic, but the band dispersion of the VBM shows a good secondary characteristic along the Γ-Y direction It was off. In the heterostructure, even with a small modification to this isotropic ratio, the isotropic effective mass was still maintained in the presence of the BN layer. The inherent isotropic electrical transmission characteristics observed in the zero-defect phospholin layer can be maintained in the BN / phosphoryl / BN system.
Depending on the isotropic transmission characteristics, the phospholene layer also exhibits this isotropic optical characteristic. Therefore, the optical characteristics were calculated as follows. In this application, two field polarities, such as zigzag and armchair, are considered. In general, the optical properties of a material can be understood from the frequency-dependent dielectric function (? (?) =? 1 (?) + I? 2 (?)).
Figure 4 shows the frequency-dependent dielectric function using the HSE 06 function method according to the armature and zigzag directions. With respect to the electric field polarity along the armchair direction, the first peak position in the defect-free phosphoryl layer was observed at about 1.5 eV. Surprisingly, the first peak position was shifted to 1.65 and 1.8 eV in the bilayer and triple layer systems, respectively. There was no significant difference in peak position over triple layer thickness. Thus, the present inventors have clearly found a blue shift in the film thickness increase at the first peak position, because it has been moved to a high energy regime. This characteristic can be understood from the calculated band structure shown in Fig. 2 because it shows an upward shift in accordance with the increase of the CBM dms film thickness near the Γ-Y direction. As a result, blue shift characteristics were observed. In the zigzag direction electric field polarity, the first peak position in the defect-free phosphoryl layer was observed at 3.1 eV. However, the red shift characteristic was observed at the peak position as the film thickness increased. The inherent isotropic optical properties of the phosphoryl layer were still maintained in the BN / phosphoryl / BN heterostructure.
Claims (7)
A hexagonal boron nitride (h-BN) layer deposited on at least one surface of the phosphoryl layer and at least one layer on the other surface,
Lt; RTI ID = 0.0 > phosphorine < / RTI > layer has an increased bandgap compared to a zero-
Phosphorine sheet.
Lt; RTI ID = 0.0 > 1, < / RTI > wherein the phospholane layer and the hexagonal boron nitride are intermixed by van der Waals interactions.
Phosphorine sheet.
The above-mentioned phosphorylation sheet has an oxidation inhibiting property of phosphoryl,
Phosphorine sheet.
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| KR20220153191A (en) * | 2021-05-11 | 2022-11-18 | 성균관대학교산학협력단 | Phosphorine-nickel phosphide complex and preparation method thereof |
| CN115814836A (en) * | 2022-12-27 | 2023-03-21 | 陕西科技大学 | High-performance purple phosphorus alkene/boron nitride aerogel composite photocatalytic material and preparation method and application thereof |
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| US20150122321A1 (en) | 2013-11-04 | 2015-05-07 | Electronics And Telecommunications Research Institute | Solar cell |
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| US20150122321A1 (en) | 2013-11-04 | 2015-05-07 | Electronics And Telecommunications Research Institute | Solar cell |
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| Cai et al.: "The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures", The Journal of Physical Chemistry C, 2015 (2015.05.27.)* |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220153191A (en) * | 2021-05-11 | 2022-11-18 | 성균관대학교산학협력단 | Phosphorine-nickel phosphide complex and preparation method thereof |
| KR102493625B1 (en) * | 2021-05-11 | 2023-01-31 | 성균관대학교산학협력단 | Phosphorine-nickel phosphide complex and preparation method thereof |
| CN115814836A (en) * | 2022-12-27 | 2023-03-21 | 陕西科技大学 | High-performance purple phosphorus alkene/boron nitride aerogel composite photocatalytic material and preparation method and application thereof |
| CN115814836B (en) * | 2022-12-27 | 2024-03-05 | 陕西科技大学 | High-performance purple phosphazene/boron nitride aerogel composite photocatalytic material and preparation method and application thereof |
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