KR101734371B1 - A manufacturing method of a far infrared ray heating element - Google Patents
A manufacturing method of a far infrared ray heating element Download PDFInfo
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- KR101734371B1 KR101734371B1 KR1020150113954A KR20150113954A KR101734371B1 KR 101734371 B1 KR101734371 B1 KR 101734371B1 KR 1020150113954 A KR1020150113954 A KR 1020150113954A KR 20150113954 A KR20150113954 A KR 20150113954A KR 101734371 B1 KR101734371 B1 KR 101734371B1
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- transparent conductive
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- 238000010438 heat treatment Methods 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title description 13
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 239000002243 precursor Substances 0.000 claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 23
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 57
- 238000001723 curing Methods 0.000 description 15
- 238000005507 spraying Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910017855 NH 4 F Inorganic materials 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012705 liquid precursor Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 241000894006 Bacteria Species 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 239000012700 ceramic precursor Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- -1 aluminum tin oxide Chemical compound 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004113 cell culture Methods 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 229910002110 ceramic alloy Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000012239 gene modification Methods 0.000 description 1
- 230000005017 genetic modification Effects 0.000 description 1
- 235000013617 genetically modified food Nutrition 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
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- Surface Heating Bodies (AREA)
Abstract
(A) preparing an electrically conductive substrate coated with a transparent conductive film on one side of a substrate; (b) etching the surface of the electrically conductive substrate; (c) coating a curable precursor on the surface of the etched electrically conductive substrate to form a curable coating film; (d) drying the curable coating film; (e) curing the curable coating film; And (f) removing the hardened portion of the curing-type coating film.
Description
The present invention relates to a method for manufacturing a bio-cell, which comprises a step of etching an electrically conductive substrate coated with a transparent conductive film on one side of a substrate to form a pattern, and performing an electrical safety process so that the bioculture can be safely cultured on the pattern. And a device manufacturing method.
The membrane having electric conductivity can be largely divided into an opaque type and a transparent type, and is used for electrodes, electromagnetic wave shielding, anti-vibration, and grounding according to electric conductivity. In particular, Transparent Conducting Oxide (TCO) is a very important material in IT and display fields. Typical examples of the transparent conductive film include transparent conductive films such as SnO 2 , ZnO and In 2 O 3 , ITO (indium tin oxide), ATO (antimony tin oxide), ATO (aluminum tin oxide) (or doped) transparent conductive films such as carbon nanotubes and graphenes, metal-based transparent conductive films such as metal thin films, metal nanoparticles, metal nanowires, etc., conductive polymers Series transparent conductive films and inorganic hybrid materials based on these materials. The transparent conductive film may be manufactured by a chemical method (vapor phase method, liquid phase method), a vapor deposition method (sputter, chemical vapor deposition, APCVD, SPD, physical vapor deposition, Coating method, liquid phase dispersion-coating method, and the like.
On the other hand, the above electrically conductive substrate may be utilized as a bio-culture heater. However, in the case of a culture heater in which a culture is cultured in a pattern formed on a substrate coated with a transparent conductive film, electric leakage is likely to occur due to a culture located in the pattern, which causes the culture to die, destroy and aging. Therefore, it is pointed out as a technical problem to secure the electrical stability in the case of the bio-cultivating heater in the form of the electrically conductive substrate.
The present invention relates to a method for manufacturing a bio-cell, which comprises a step of etching an electrically conductive substrate coated with a transparent conductive film on one side of a substrate to form a pattern, and performing an electrical safety process so that the bioculture can be safely cultured on the pattern. And an object of the present invention is to provide a device manufacturing method.
In order to solve the above-described problems, the present invention provides a method of manufacturing a semiconductor device, comprising: (a) preparing an electrically conductive substrate coated with a transparent conductive film on one surface of a substrate; (b) etching a part of the surface of the electroconductive substrate coated with the transparent conductive film; (c) coating a precursor on the etched surface of the surface of the electroconductive substrate to form a curable coating film; (d) drying the curable coating film; (e) curing the curable coating film; And (f) removing a relatively hardened portion formed to cover the etched portion, leaving a portion formed to surround the untreated transparent conductive film in the curable coating film; A method of manufacturing a far infrared ray heater element comprising the steps of:
In the step (a), the transparent conductive film may be any one of ITO, FTO, AZO, ATO, and ZnO.
In addition, in the step (a), the substrate may be a flexible substrate that can be bent.
In the step (c), the curing type precursor may be one of an electrically curing type, a chemical curing type, and a thermosetting type.
In the step (c), the curing precursor may be in the form of a solution containing a metal precursor.
In the step (c), the curing precursor may be characterized in that the solution containing the metal precursor is a ceramic sol. In this case, the ceramic sol may be selected from the group consisting of TiO 2 , SiO 2 , ZnO, Al 2 O 3 , ZrO 2 , SnO 2 , MgO, V 2 O 5 , B 2 O 3 , Fe 2 O 3 , BaTiO 3 , WO 3 and NiO And may be characterized by being composed of any one or more.
The step (a) may be performed by preparing an electrically conductive substrate coated with an FTO transparent conductive film on a flexible substrate having a thickness not exceeding 700 탆, and the step (c) And (c) coating the sol with a solvent, and (c) curing the curable coating layer by electrically heating the coating layer. In this case, the electrical heating temperature of step (e) may be 50 to 200 ° C.
According to the method of manufacturing a far infrared ray heater element according to the present invention, in manufacturing a bio heater in which a bio-cultured body is cultured on a pattern formed by etching an electrically conductive substrate coated with a transparent conductive film on one surface of a substrate, . As a result, it becomes possible to realize a bio heater that provides a high-quality culture environment and a growth environment with less risk of cell damage or genetic modification.
[Fig. 1] is a schematic view of two schemes for etching an electrically conductive substrate coated with a transparent conductive film.
FIG. 2 is a schematic diagram showing that when a bioculture is cultured on a pattern on a conventional electrically conductive substrate, bacteria, bacteria, etc., which are cultivated due to electricity, can be killed or weakened due to short circuit or electromagnetic waves.
[Figure 3] is a photograph of a SiO 2 sol and a TiO 2 sol which can be used as a curing precursor in the present invention.
4 is a schematic diagram of an embodiment of the present invention.
5 is a photograph of a bio-heater including a far-infrared heater element manufactured according to a method of manufacturing a far-infrared heater element according to the present invention.
Hereinafter, a method of manufacturing a far infrared ray heater element according to the present invention will be described in detail.
A method of manufacturing a far infrared ray heater element according to the present invention includes the steps of: (a) preparing an electrically conductive substrate coated with a transparent conductive film on one surface of a substrate; (b) etching a part of the surface of the electroconductive substrate coated with the transparent conductive film; (c) coating a precursor on the etched surface of the surface of the electroconductive substrate to form a curable coating film; (d) drying the curable coating film; (e) curing the curable coating film; And (f) removing a relatively hardened portion formed to cover the etched portion, leaving a portion formed to surround the untreated transparent conductive film in the curable coating film; .
In the step (a), the transparent conductive film may be any one of ITO, FTO, AZO, ATO, and ZnO. The substrate may be a flexible substrate that can be bent, The material may be any of ceramics, ceramic alloys, doping, metal, carbon, organic, and organic hybrids.
The FTO precursor solution was prepared by dissolving SnCl 4 5H 2 O in tertiary distilled water to obtain 0.68 (0.7 mm), 0.5 t, and 0.3 t or less of the wheel. M and NH 4 F as an F dopant in an ethanol solvent to 1.2 M, mixing and stirring the two solutions. The coating solution was prepared by adding SnCl 4 5H 2 O to 5% pure DI water Ethanol to 0.68 M and stirred. The source of F can be synthesized by adjusting NH 4 F to a ratio of F / Sn of 1.76. Of course, in addition to the above solution composition, alcohols and ethylene glycol may be added incidentally. To adjust the amount of F doping, the amount of NH 4 F may be varied from 0.1 to 3 M, or a hydrofluoric acid (HF) May be added.
In order to obtain the precursor flow by atomizing the FTO precursor into the gas phase, three kinds of devices can be connected to the precursor source part by a spray coating method, an ultrasonic spray coating method, and an ultrasonic spraying method. A brief description of these three microdroplet precursor forming techniques is that spraying liquid precursor with a microdroplet occurs when the external gas is expanded through a fine nozzle portion to pull out the liquid. The ultrasonic atomization method is a method of atomizing a liquid precursor like an ordinary ultrasonic humidifier by vibrating with an ultrasonic vibrator, and then transporting the liquid precursor to a carrier gas. Finally, the ultrasonic spraying method is a method of spraying an atomized precursor by a spraying principle by changing an ultrasonic vibrator part like a spray nozzle.
For example, if a single ultrasonic terminal (1.6Hz) is used (one nozzle, one exhaust system), spraying pressure is 0.15 and suction pressure is 520W to adjust the atomization rate and the deposition rate of the film, The flow control for homogeneity is possible, and the deposition time of the FTO transparent conductive film is about 25 minutes. At this time, the heating temperature of the thin plate glass and the glass ribbon is set to 350 to 550 ° C. It is also possible to apply in-line type or roll-to-roll type to form thin plate FTO.
The method of performing the etching in the step (b) can be largely performed in one of chemical etching (gas phase and liquid phase) and physical etching (water jet, plasma, powder polishing (liquid phase, solid phase, vapor phase), laser etching, etc.). As shown in FIG. 1, when the transparent conductive film is etched by a laser, a part of the etch can be formed not only in the transparent conductive film but also in the lower substrate A hole is formed in the etched transparent conductive film when the etched transparent conductive film is etched. As shown in FIG. 2, when the electricity is applied to the etched transparent conductive film, a leakage current or an electromagnetic wave environment, which may be killed or weakened, Able to know.
A specific example of the etching method is laser etching in plasma. Three wavelengths of Nd 3 + : YAG 355 (ultraviolet rays), 532 (visible light) and 1064 (near infrared rays) were used as the plasma induced energy source, and the glass substrate as the above- have.
The plasma-induced energy Nd 3 +: addition but illustrates a YAG laser on the Ytterbium fiber laser (1064 ~ 1550nm, second harmonic: 532 nm), Erbium fiber laser (554 ~ 1550nm), Thalium fiber laser (1800 ~ 2100nm), YAG (2.94 m), Ho: YAG (2.94 m), CO2 (2.94 m), Ar ion laser (2.94 m) (364, 451 nm), Ti: sapphire laser (360 to 460 nm), Dye laser (330 to 740 nm), He- Ne laser (633 nm), Nd: YAG (1064 nm, 1570 nm, SECOND: (351 nm), Alexandrite (second harmonic: 360 to 430 nm), Colar center laser (900 to 1500 nm), InGaAsP (1 to 1.7 m), Er: glass (1535 nm, THIRD HARMONIC: 355 nm) ), Cr: LISO (1160 to 1162 nm), Cr: YAG (1350 to 1550 nm), Cr-torsteinize (1173 to 1338 nm), Cunite Cr: LIGO (1150 to 1600 nm) or the like can also be used.
In the step (c), the curing-type precursor may be one of an electrically curing type, a chemical curing type, and a thermosetting type. The curing type precursor may be in the form of a solution containing a metal precursor. In this case, the solution containing the metal precursor may be a ceramic sol. The ceramic sol may include TiO 2 , SiO 2 , ZnO, Al 2 O 3 , ZrO 2 , SnO 2 , MgO, V 2 O 5 , B 2 O 3 , Fe 2 O 3 , BaTiO 3 , WO 3 and NiO.
G. When proceeding to the step using a SiO 2 sol in Example, a transparent conductive film of FTO 0.4t (400㎛), but coating the curable precursor on the coated flexible substrate, SiO 2 ceramic precursor reagent TMOS (Tetramethyl orthosilicate ), 10 ml of water, 1 ml of ethanol and 9 mg of 30 nm SiO 2 nano powder were mixed and adjusted to pH 4 with HCl and stirred at a constant temperature for 24 hours to prepare a TiO 2 sol solution. The solution was subjected to patterned transparent conduction It can be coated on the film. In this case, the solution may be appropriately diluted for thickness control, and the composition of the reactant may be changed to increase the thickness.
G. When proceeding to step present using a TiO 2 sol in Example, but coating the curable precursor onto the ITO transparent conductive film coated substrate, TiO 2 ceramic precursor reagent Titanium iso-propoxide (TTIP) 1ml , water 10ml, 1 ml of ethanol and 10 mg of 30 nm SiO 2 nano powder were mixed and mixed with HCl at pH 4 and stirred at constant temperature for 24 hours to prepare a TiO 2 sol solution and the solution was coated on the patterned transparent conductive film through dip coating. In this case, the solution may be appropriately diluted for thickness control, and the composition of the reactant may be changed to increase the thickness.
The characteristics of the SiO 2 sol and the TiO 2 sol can be confirmed through [FIG. 3].
In the step (d), the curing-type coating layer is dried. The drying time and the temperature may be variously set.
When the tip coating is carried out through the SiO 2 sol or TiO 2 sol solution, which is a concrete example of the step (c), it is preferable to dry at room temperature for about 1 hour.
The step (e) is a step of curing the curable coating film. The curing method may be an electrical method, a chemical method, or a thermal method, depending on the type of the curable precursor.
In this step, in the case of the flexible substrate coated with the FTO transparent conductive film on which the dip coating with the SiO 2 sol according to the above embodiment is performed, electricity is applied to the FTO transparent conductive film, and the surface temperature is increased to 80 to 120 ° C. However, when the transparent conductive film is heated for a long time, the transparent conductive film may be cured to a portion where the transparent conductive film is etched by thermal conduction.
In this step, the ITO transparent conductive film, which is dip coated with the TiO 2 sol of the above embodiment, is applied to the ITO transparent conductive film, and the surface of the transparent conductive film is cured at 80 to 120 ° C However, when the transparent conductive film is heated for a long time, the transparent conductive film may be cured to a portion where the transparent conductive film is etched by thermal conduction.
On the other hand, the temperature for the electric heat treatment is preferably 50 ° C or higher for curing suitability, and 200 ° C or lower is suitable in order to prevent the deterioration of the universal light conductive film.
The step (f) is a step of removing the uncured portions of the curable coating film. Specifically, as shown in FIG. 4, the portion of the curable coating film that surrounds the untreated transparent conductive film is left, And removing the relatively hardened portion formed to cover the portion. For example, an electrically heat-treated substrate can remove unreacted sites through liquid ultrasonic cleaning or an air jet.
FIG. 4 is a schematic view of a specific embodiment of the present invention. FIG. 5 shows a specific example of a bio heater using a far-infrared heater element manufactured according to the present invention. The electrodes of FIG. 5 were formed using a commercially available silver paste. The portions of the transparent conductive film were linearly etched so that electricity did not flow on both sides in order to uniformly generate heat at the pattern portions. .
In the most preferred embodiment of the present invention, step (a) is performed by preparing an electrically conductive substrate coated with a FTO transparent conductive film on a flexible substrate having a thickness not exceeding 700 탆, and step (c) (E) may be performed in such a manner that the curing-type coating layer is electrically heated to cure the ceramic layer. In this case, the electric heating temperature of step (e) is 50 to 200 ° C.
The present invention has been described in detail with reference to the preferred embodiments. However, it should be understood that the present invention is not limited to the above-described embodiment, but may be modified and changed without departing from the spirit and scope of the invention. The claims of the present invention thus include such modifications and variations.
none
Claims (9)
(b) etching a part of the surface of the electroconductive substrate coated with the transparent conductive film;
(c) coating a precursor on the etched surface of the surface of the electroconductive substrate to form a curable coating film;
(d) drying the curable coating film;
(e) curing the curable coating film; And
(f) removing the relatively hardened portion formed to cover the etched portion, leaving a portion formed to surround the untreated transparent conductive film in the curable coating film; And a heater for heating the far infrared ray.
Wherein the transparent conductive film is one of ITO, FTO, AZO, ATO, and ZnO in the step (a).
Wherein the substrate is a flexible substrate which can be bent in the step (a).
Wherein the curing type precursor is one of an electrically curing type, a chemical curing type, and a thermosetting type in the step (c).
Wherein the curing type precursor in the step (c) is in the form of a solution containing a metal precursor.
Wherein the curable precursor in the step (c) is a ceramic sol containing a solution containing a metal precursor.
In the step (c), the ceramic sol may be selected from the group consisting of TiO 2 , SiO 2 , ZnO, Al 2 O 3 , ZrO 2 , SnO 2 , MgO, V 2 O 5 , B 2 O 3 , Fe 2 O 3 , BaTiO 3 , WO 3 And NiO. ≪ RTI ID = 0.0 > 11. < / RTI >
The step (a) may be performed by preparing an electrically conductive substrate coated with a FTO transparent conductive film on a flexible substrate having a thickness not exceeding 700 탆,
The step (c) is performed by coating a ceramic sol on the surface of the etched electrically conductive substrate,
Wherein the step (e) is performed by electrically heating and curing the curable coating film.
Wherein the electrical heating temperature of step (e) is 50 to 200 占 폚.
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