KR101727773B1 - Exposure apparatus - Google Patents

Exposure apparatus Download PDF

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Publication number
KR101727773B1
KR101727773B1 KR1020127017196A KR20127017196A KR101727773B1 KR 101727773 B1 KR101727773 B1 KR 101727773B1 KR 1020127017196 A KR1020127017196 A KR 1020127017196A KR 20127017196 A KR20127017196 A KR 20127017196A KR 101727773 B1 KR101727773 B1 KR 101727773B1
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South Korea
Prior art keywords
lens
photomask
mask pattern
exposure
light
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KR1020127017196A
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Korean (ko)
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KR20120107980A (en
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미찌노부 미즈무라
가즈시게 하시모또
마꼬또 하따나까
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브이 테크놀로지 씨오. 엘티디
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Lenses (AREA)

Abstract

The present invention includes photomasks 10 and 24 in which a mask pattern having the same shape as the exposure pattern exposed on the surface of the TFT substrate 4 held on the stage 8 is formed, A unit lens group 15, 29 constituted by arranging a plurality of convex lenses 14, 28 in the normal direction of the photomasks 10, 24 so as to be able to form images on the surface of the TFT substrate 4, A plurality of lens assemblies 11 and 25 arranged in a plane parallel to the surface of the TFT substrate 4 held on the photomasks 10 and 24 and the stages 8 and lens assemblies 11 and 25 And moving means 12 and 26 for moving the masks 10 and 24 and the plane parallel to the surface of the TFT substrate 4 on the stage 8.

Description

[0001] EXPOSURE APPARATUS [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an exposure apparatus for exposing an exposed object held on a stage to exposure light through a photomask to form a predetermined pattern, To an exposure apparatus capable of performing exposure with high resolving power.

A conventional exposure apparatus of this type is an exposure apparatus for intermittently irradiating exposure light through a photomask to an object to be exposed at a constant speed and exposing the mask pattern of the photomask to a predetermined position, And a plurality of light receiving elements arranged in a direction substantially orthogonal to the carrying direction, the first image pickup means being arranged to image a position on the opposite side of the exposure position from the exposure position, Second imaging means arranged to take an image of a position on the side opposite to the exposure position or on the side opposite to the carrying direction of the object to be exposed than the exposure position and having a plurality of light receiving elements arranged substantially parallel to the carrying direction, Relative to the photomask in a direction substantially orthogonal to the carrying direction, An alignment means for correcting an exposure position and a control means for controlling the driving of the alignment means on the basis of the detected first reference position for exposure position correction previously provided on the object by the first imaging means, And control means for controlling the irradiation timing of the exposure light when a second reference position for extracting the irradiation timing of the exposure light, which is previously provided on the object, is detected by the imaging means, based on the detected second reference position (for example, Patent Document 1).

Japanese Patent Application Laid-Open No. 2008-76709

However, in such a conventional exposure apparatus, in the case of exposing a pattern having periodicity to an object to be exposed (substrate), it is possible to easily carry out exposure of the substrate while controlling the irradiation timing of exposure light at a predetermined cycle while conveying the substrate at a constant speed in one direction However, exposure of an aperiodic pattern is difficult. In addition, since the photomask is exposed so as to face the substrate closely, the phase of the pattern on the substrate becomes blurred due to the presence of the time (collimation half angle) in the light source light irradiated on the photomask, There is a possibility that exposure can not be formed.

Such a problem can be solved by using a stepper exposure apparatus for exposing a photomask image onto a substrate by reducing an image by an imaging lens to expose the substrate. However, for example, when exposure is performed to a substrate having a large area of 1 m or more on one side There is a problem that the lens aperture used becomes large in correspondence with the size of the substrate and becomes expensive.

Accordingly, an object of the present invention is to provide an exposure apparatus which can cope with such a problem and can perform exposure of an aperiodic pattern in a large-area exposed object with a high resolution.

In order to attain the above object, an exposure apparatus according to the present invention comprises: a photomask in which a mask pattern having the same shape as an exposure pattern exposed on a surface of an object held on a stage is formed; And a plurality of convex lenses arranged in a direction normal to the photomask so as to form an image of equal magnification of the mask pattern formed on the photomask on the surface of the object to be imaged is formed on the photomask and on the stage And a moving means for moving the lens assembly in a plane parallel to the surfaces of the photomask and the object on the stage.

With this configuration, the unit lens group, which is disposed between the photomask and the stage, in which a plurality of convex lenses are arranged in the normal direction of the photomask, is called a photomask and a surface parallel to the surface of the object to be held on the stage And moving the lens assembly in the plane parallel to the stage with the moving means by moving the lens assembly in such a manner that an equal size image of the mask pattern formed on the photomask is formed on the surface of the object to be held on the stage, And exposes a predetermined pattern to the exposed object.

The lens assembly may further include a plurality of rows of lens rows arranged at a predetermined pitch in the moving direction and having a plurality of unit lens groups arranged at a predetermined pitch in a direction orthogonal to the moving direction thereof, One lens train of the lens train adjacent to each other is shifted by a predetermined amount in the arrangement direction of the unit lens group so that a part of each unit lens group of each lens train overlaps. As a result, a plurality of rows of the lens units in which a plurality of unit lens groups are arranged at a predetermined pitch in the direction orthogonal to the moving direction of the lens assembly are arranged in a plurality of rows at a predetermined pitch in the moving direction, The mask pattern of the photomask is exposed on the object while moving the lens assembly provided by shifting one lens train of the lens train adjacent to the unit lens group by a predetermined amount in the arrangement direction of the unit lens group so that a part of the unit lens group is overlapped.

The lens assembly may include a first lens array, a second lens array, a third lens array and a fourth lens array in which a plurality of convex lenses are formed on the front and back surfaces of a transparent substrate, And an intermediate overlaid image of the mask pattern of the photomask is formed between the second lens array and the third lens array. Thereby, the first, second, third, and fourth lens arrays in which a plurality of convex lenses are formed in correspondence with the front and back surfaces of the transparent substrate are superimposed on the optical axes of the corresponding convex lenses, An image of the equal magnification of the mask pattern formed on the photomask is imaged on the surface of the object to be imaged by the lens assembly configured to image the intermediate overlaid image of the mask pattern between the second lens array and the third lens array.

The lens assembly is provided with a first diaphragm having an opening of a predetermined shape near the surface of the convex lens located on the upstream side in the traveling direction of light of the third lens array, . Thereby, by the first diaphragm having an opening of a predetermined shape formed in the vicinity of the surface of the convex lens located on the upstream side in the traveling direction of light of the third lens array of the lens assembly, the exposure area by the unit lens is moved to the center of the lens Limit.

The aperture of the first diaphragm may have a rectangular opening when viewed in plan view and an area of a portion of the aperture overlapping with a part of the aperture of the first diaphragm adjacent to the lens assembly when viewed in the moving direction of the lens assembly, And half of the light is shielded. As a result, in the rectangular opening viewed from the plane, a part of the overlapping portion of the portion of the opening of the first diaphragm adjacent to the opening of the lens assembly when viewed from the moving direction of the lens assembly is half the area of the entire overlapping portion, The exposure area is limited at the aperture of the first iris of one shape to expose the mask pattern of the photomask to the surface of the object to be exposed. In this case, a predetermined amount of exposure is performed by the overlapping exposure of the unit lens group which is present in the moving direction of the lens assembly.

In addition, the lens assembly is provided with a second diaphragm which limits the diameter of the light beam in the vicinity of the lens surface on the upstream side of the light traveling direction of the fourth lens array. Thereby, the diameter of the light beam is restricted by the second diaphragm provided close to the lens surface on the upstream side of the direction of travel of light in the fourth lens array.

The stage is capable of carrying the object in one direction, and the moving means moves the lens assembly while the movement of the stage is stopped. Thereby, the stage carrying the object to be imaged and carrying it in one direction is temporarily stopped, and in this stop state, the lens assembly is moved by the moving means to expose the mask pattern of the photomask onto the object.

Further, a plurality of light-shielding films arranged in at least one row at a predetermined interval in a direction orthogonal to the conveying direction of the object are provided on the light-shielding film formed on one surface of the transparent substrate, on the opposite side of the photomask from the transfer direction of the object, And the other mask pattern is exposed to a predetermined cycle to the object to be exposed while the light source beam is intermittently irradiated to the other photomask at a predetermined time interval and conveyed at a constant speed to the other photomask . As a result, the light-shielding film provided on the opposite side of the photomask from the transfer direction of the object to be photographed above the stage and arranged in at least one row at a predetermined interval in the direction orthogonal to the conveying direction of the object, The light source light is intermittently irradiated to the other photomask forming the other mask pattern at a predetermined time interval, and the other mask pattern is exposed to the exposed body during a predetermined speed in a predetermined cycle.

The other photomask is formed by sequentially forming two mask pattern groups of two kinds of mask patterns having different required resolving power on the light shielding film formed on the surface of the transparent substrate opposite to the object to be exposed, And a micro lens for projecting the mask pattern onto the object to be projected correspondingly to a mask pattern having a high resolution required among the two types of mask patterns having different required resolving power is formed on the surface on the object side. As a result, of the two mask pattern groups formed of two types of mask patterns different in the required resolution from each other formed in the light-shielding film formed on the surface of the transparent substrate opposite to the object to be exposed in the transport direction of the object to be exposed, A plurality of mask patterns of the pattern group are projected on the object to be exposed on the transparent substrate by a plurality of microlenses formed corresponding to the mask pattern having a high required resolution.

The mask pattern group having a mask pattern with a high required resolution may include a plurality of mask pattern columns formed by arranging the plurality of mask patterns in a straight line at a predetermined pitch in a direction substantially perpendicular to the conveying direction of the object to be imaged And a plurality of exposure patterns formed by a mask pattern column positioned on the head side in the conveying direction of the object to be inspected are complemented by a plurality of exposure patterns formed by a subsequent mask pattern column, And the mask patterns are formed so as to be shifted by a predetermined dimension in the arrangement direction of the plurality of mask patterns. Thereby, a plurality of mask pattern columns formed by arranging a plurality of mask patterns at a predetermined pitch in a direction substantially orthogonal to the conveying direction of the object are provided, and a plurality of mask pattern columns arranged in the conveying direction of the object to be inspected, Is formed by a mask pattern column located at the head side in the conveying direction of the object to be exposed by a mask pattern group formed by a mask pattern group having a high required resolution and formed by shifting the mask pattern columns of the mask pattern array by a predetermined dimension in the arrangement direction of the plurality of mask patterns Is complemented by a plurality of exposure patterns formed by a subsequent mask pattern column.

The other photomask is to expose two types of mask patterns having different required resolving power to the display region at the center of the substrate for the thin film transistor at a predetermined cycle, A mask pattern having a high required resolution is a mask pattern for an electrode wiring of a thin film transistor and a mask pattern having a low required resolution is a signal line for supplying signals to the thin film transistor and a mask pattern for a scan line, Is provided with a terminal mask pattern connected to the signal line or the scanning line in an area outside the display area of the substrate for a thin film transistor. As a result, the exposure patterns of the electrode wirings of the thin film transistors having the high resolution required in the other photomask and the exposure patterns of the signal lines and the scanning lines having the low required resolution are formed at predetermined intervals in the central display region of the substrate for the thin film transistor, An exposure pattern of a terminal connected to an exposure pattern of a signal line or a scanning line in a photomask is formed in an area outside the display region of the substrate.

According to the invention of claim 1, it is possible to expose a lens assembly formed so as to be imageable on the surface of an object to be exposed in parallel with the surface of the photomask, while the mask pattern formed on the photomask is moved in parallel, The pattern can be exposed with a high resolution. In this case, the lens assembly may be smaller than the size of the photomask. Therefore, even if the size of the photomask is increased in correspondence with the large-area exposed object, the size of the lens assembly to be used can be reduced, and the cost of parts can be reduced. Thus, the manufacturing cost of the apparatus can be reduced.

According to the second aspect of the present invention, the mask pattern having a size larger than the size of the lens can be continuously connected and exposed without being interrupted.

According to the third aspect of the present invention, it is possible to easily form a lens assembly in which a plurality of unit lenses are arranged in a plane. Therefore, the manufacturing cost of the lens assembly can be reduced.

According to the fourth aspect of the present invention, it is possible to eliminate the influence of the aberration of the lens and form a uniformly sized image of the mask pattern of the photomask on the surface of the object to be exposed with high accuracy. Therefore, the formation precision of the exposure pattern can be improved.

According to the fifth aspect of the present invention, overexposure can be prevented even when overlapping exposure is performed to connect the exposure pattern. Therefore, the formation accuracy of the exposure pattern can be further improved.

According to the sixth aspect of the present invention, it is possible to limit the diameter of the bundle of rays and further improve the resolving power by the unit lens group of the lens assembly.

According to the seventh aspect of the present invention, the exposure can be performed while the object to be exposed is continuously supplied, and the efficiency of the exposure processing can be improved.

According to the eighth aspect of the present invention, in the same exposure step, an exposure pattern having no periodicity and an exposure pattern having periodicity can be formed.

According to the invention of claim 9, even when two types of exposure patterns having different required resolving power on the object to be formed are formed in a mixed state thereof, they can be simultaneously formed in the same exposure step, thereby improving the exposure processing efficiency .

According to the invention of claim 10, even when the arrangement pitch of the plurality of mask patterns of the mask pattern row can not be narrowed due to the presence of the microlenses, even when the arrangement pitch of the plurality of mask patterns of the mask pattern row can not be narrowed, The plurality of exposure patterns can be supplemented by a plurality of exposure patterns formed by the subsequent mask pattern lines. Therefore, an exposure pattern having a high required resolution can be densely formed.

According to the eleventh aspect of the present invention, in the display region at the center of the thin film transistor substrate of the display device, the exposure pattern for the electrode wiring of the thin film transistor and the exposure pattern for the scan line, And an exposure pattern for a terminal having no periodicity can be formed in the same exposure step by connecting to an area outside the display area to the signal line or scan line exposure pattern. Therefore, the wiring pattern of the substrate for a thin film transistor can be efficiently formed.

1 is a front view showing an embodiment of an exposure apparatus according to the present invention.
2 is a plan view of Fig.
3 is a plan view showing a substrate for a thin film transistor used in the exposure apparatus of the present invention.
4 is a plan view showing a structural example of a photomask for a signal terminal used in the exposure apparatus of the present invention.
Fig. 5 is a diagram showing a configuration example of a lens terminal assembly for a signal terminal used in the exposure apparatus of the present invention. Fig. 5 (a) is a plan view and Fig. 5 (b) is a front view.
6 is a plan view for explaining the opening of the first diaphragm of the lens assembly for a signal terminal.
7 is an explanatory view showing exposure by two unit lens groups adjacent to the moving direction of the signal terminal lens assembly.
8 is a plan view showing another shape of the opening of the first diaphragm.
Fig. 9 is a plan view showing a structural example of a photomask for a scan terminal used in the exposure apparatus of the present invention. Fig.
Fig. 10 is a diagram showing a structural example of a lens assembly for a scanning terminal used in the exposure apparatus of the present invention, wherein (a) is a plan view and (b) is a front view.
11 is a plan view showing a large-area substrate provided with multiple display panels, which is a substrate used in the exposure apparatus of the present invention.
12 is a plan view showing an arrangement of the exposure optical unit in the exposure apparatus of the present invention and showing an example of arrangement of the large-area substrate in Fig.
FIG. 13 is a schematic plan view showing an example in which a plurality of types of mask patterns are formed on one photomask, in which (a) shows an example of a photomask for a signal terminal, (b) Fig.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a front view showing an embodiment of an exposure apparatus according to the present invention, and Fig. 2 is a plan view of Fig. This exposure apparatus is capable of performing exposure of an aperiodic pattern in a large area exposed object with high resolving power and comprises a transfer means 1, a first exposure optical unit 2, Unit (3). In the following description, the case where the substrate is a thin film transistor (hereinafter referred to as " TFT ") substrate of a display device will be described.

Fig. 3 is a plan view of the TFT substrate 4 used in the present invention, in which exposure patterns of a plurality of signal lines and scanning lines cross each other longitudinally and laterally at predetermined intervals in the display region 5 by different exposure apparatuses. A region 6 surrounded by a broken line in Fig. 3 from the outside of the display region 5 is a region for forming a signal side terminal for connecting with a plurality of signal lines and a signal side driver circuit provided outside, and the region 7 Is an area forming a scanning side terminal for connection with a plurality of scanning lines and a scanning side driving circuit provided outside.

The transporting means 1 transports the TFT substrate 4 coated with a photosensitive resin on the upper surface of the stage 8 in one direction (in the direction of the arrow A shown in Fig. 1). For example, The stage 8 is moved by the moving mechanism constituted by a combination of the above- Alternatively, the stage 8 may be provided with an air outlet and a suction port on the surface of the stage 8, and balance the output and suction force of the gas so that the TFT substrate 4 is floated on the stage 8 by a predetermined amount It may be good. The transfer means 1 is provided with a position sensor (not shown) for detecting the movement distance of the stage 8.

A first exposure optical unit 2 is provided above the conveying means 1. The first exposure optical unit 2 is for exposing a pattern of signal side terminals to the signal side terminal formation region 6 of the TFT substrate 4 and includes a light source device 9 and a signal terminal photomask 10, a lens terminal assembly 11 for a signal terminal, and a moving means 12.

Here, the light source device 9 irradiates parallel light of light source light having a uniform luminance distribution to a signal terminal photomask 10 to be described later. The light source device 9 includes, for example, a light source made of an ultra high pressure mercury lamp or a xenon lamp, For example, a photo integrator for uniformizing the luminance distribution of the light source light emitted from the light source, and a condenser lens for converting the light source light having the uniform luminance distribution into parallel light.

A photomask 10 for a signal terminal is provided on the downstream side of the light source light emitted from the light source 9. 4, a signal terminal mask pattern 13 having the same shape as that of the signal side terminal is formed on the surface of a transparent substrate, and the signal terminal mask pattern 13 is formed on the transparent substrate surface. And is held on a mask stage (not shown) with its face downward. The photomask 10 for a signal terminal is classified into a positive type and a negative type according to the type of the photosensitive resin to be used, but the case of the positive type is explained here. Therefore, the signal terminal mask pattern 13 is formed of an opaque film, and the light is allowed to pass through the region outside the signal terminal mask pattern 13.

A signal terminal lens assembly 11 is provided between the signal terminal photomask 10 and the stage 8 of the transfer means 1. This signal terminal lens assembly 11 forms an image of equal magnification of the signal terminal mask pattern 13 formed on the signal terminal photomask 10 on the surface of the TFT substrate 4, (Microlenses) 14a to 14h as shown in Fig. 5 (b) are arranged in the direction of the normal line of the signal terminal photomask 10 1 and 2 are arranged in a plane parallel to the surface of the stage 8 and the photomask 10 for signal terminals and the plane parallel to the stage 8 are moved by the moving means 12, (In the direction of arrow B in Fig. 1) opposite to the substrate transport direction indicated by A in Fig.

A specific example of the configuration of the signal terminal lens assembly 11 is as shown in Fig. 5A. The signal terminal lens assembly 11 is orthogonal to the moving direction of the signal terminal lens assembly 11 (in the direction of arrow B in Fig. 5) direction by a plurality of unit lens group 15, the pitch P 1 (e.g., 150㎛ pitch) a lens column (16) arranged for a pitch P 2 (for example, in the direction of movement indicated by the arrow B, the pitch 150㎛ And one of the lens arrays 16 adjacent to each other so that a part of each unit lens group 15 of each lens array 16 overlaps with each other when viewed in the moving direction (the direction of arrow B) The rows 16 are arranged in the arrangement direction of the unit lens group 15 at a ratio of 1 / n (n is an integer of 2 or more, and n = 3 in FIG. 5) of the arrangement pitch P 1 of the plurality of unit lens groups 15 ) By a predetermined amount.

5 (b), the lens assembly 11 for a signal terminal includes first and second lens groups 14a and 14b having a plurality of convex lenses 14 formed on the front and back surfaces of a transparent substrate 17, The first, second, third and fourth lens arrays 18a to 18d are superposed and joined together in a state in which the optical axes of the corresponding convex lenses 14 are aligned with each other, And forms an intermediate overlaid image of the second lens array 13 between the second lens array 18b and the third lens array 18c. In this case, the unit lens group 15 is composed of the eight convex lenses 14a to 14h arranged with the optical axes aligned with each other.

Here, the function of each convex lens 14 of the unit lens group 15 will be described. First, the front convex lens 14a of the first lens array 18a projects the principal ray of incident light in order to increase the amount of exposure light that has passed through the signal terminal photomask 10 into the unit lens group 15, And is a field lens serving to focus on the surface of the rear convex lens 14b of the lens array 18a. The rear convex lens 14b of the first lens array 18a and the front convex lens 14c of the second lens array 18b cooperate to form a signal terminal mask pattern And forms an intermediate overlaid image of the signal terminal mask pattern 13 by forming an image of the signal line 13 between the second lens array 18b and the third lens array 18c. Further, the rear convex lens 14d of the second lens array 18b is a field lens serving to make the principal ray of incident light parallel to the optical axis. The front convex lens 14e of the third lens array 18c is a field lens serving to focus the principal ray of the incident light onto the surface of the rear convex lens 14f of the third lens array 18c . The rear convex lens 14f of the third lens array 18c and the front convex lens 14g of the fourth lens array 18d cooperate to form an intermediate overlying phase of the signal terminal mask pattern 13, And forms an image of the mask pattern 13 for the signal terminal by imaging on the surface of the substrate 4 for use. The rear convex lens 14h of the fourth lens array 18d is a field lens serving to make the principal ray of incident light parallel to the optical axis. As a result, an equiphase image of the signal terminal mask pattern 13 of the signal terminal photomask 10 can be formed on the surface of the TFT substrate 4 by the unit lens group 15.

5 (b), the lens assembly 11 for a signal terminal is provided with an opening 20 (see Fig. 5 (b)) of a predetermined shape, which is close to the surface of the front convex lens 14e of the third lens array 18c. Is provided to limit the exposure area by the unit lens group 15 to the central portion of the lens. Thereby, the signal terminal mask pattern 13 of the signal terminal photomask 10 can be exposed with a high resolution without the influence of the aberration of the lens.

In this case, the opening 20 of the first diaphragm 19 is a rectangular opening having four corners 21a, 21b, 21c and 21d as shown in Fig. 6, (Hereinafter referred to as " overlapped portion 22 ") that overlaps with a portion of the aperture 20 of the adjacent first diaphragm 19 as viewed in the moving direction (arrow B direction) of the lens assembly 11 for a terminal And a portion of the corresponding portion is shielded so as to be half the total area of the overlapped portion 22. 5A, the shape of the opening 20 of the first diaphragm 19 is a hexagon having a corner portion on the center line of the lens array 16. In this case, The area of the opening 20 of the first diaphragm 19 corresponding to the overlapped portion 22 is half the total area of the overlapped portion 22 and the area corresponding to the overlapped portion 22 Becomes half of the predetermined exposure amount. Therefore, the region corresponding to the overlap portion 22 is formed by the overlapping exposure of the two unit lens groups 15 existing in the moving direction (the direction of the arrow B) of the signal terminal lens assembly 11 Exposure is performed. Thereby, there is no possibility that the area corresponding to the overlapped portion 22 is overexposed.

Here, with reference to FIG. 7, a description will be given in more detail of a state in which an area corresponding to the overlapped portion 22 is exposed during movement of the signal terminal lens assembly 11. FIG.

7A is a plan view showing a unit lens group 15 which is present in the moving direction (the direction of arrow B) of the signal terminal lens assembly 11. 7 (b) is an explanatory diagram showing the exposure of the point O corresponding only to the overlapped portion 22 in Fig. 7 (a). In this case, the point O is limited by the aperture 20 of the first diaphragm 19, so that exposure starts from t 1 and exposure finishes at t 2 . Thus, the point O is exposed to light of a predetermined amount of light in the period from t 1 to t 2 , and exposure is performed at a predetermined depth.

On the other hand, FIG. 7 (c) is an explanatory view showing the exposure of the point P corresponding to the overlapped portion 22. FIG. In this case, point P, after the first is limited by the portion corresponding to the overlapped portion 22 of the opening 20 of the first aperture (19), the exposure is started from t 3 is exposed is once terminated at t 4, a subsequent the first is limited by the portion corresponding to the overlapped portion 22 of the aperture 20 of the diaphragm 19 is resumed, the exposure from t 5 is completed and the exposure at t 6. As a result, the point P is exposed to light of a predetermined amount of light in the period from t 3 to t 4 and t 5 to t 6 , and exposure is performed at a predetermined depth.

7 (d) is an explanatory view showing the exposure of the point Q corresponding to the overlapped portion 22. As shown in Fig. In this case, the point Q is limited by the portion corresponding to the overlap portion 22 of the opening 20 of the first diaphragm 19, and after the exposure starts at t 7 and the exposure at t 8 ends once, Is limited by the portion corresponding to the overlapped portion 22 of the opening 20 of the first stop 19 of the first stop 19 and the exposure is resumed from t 9 and the exposure is finished at t 10 . Thereby, the point Q is exposed to light of a predetermined light intensity in the period of the t 7 to t 8, t 9 to t 10, the exposure of a predetermined depth is carried out.

The shape of the opening 20 of the first diaphragm 19 is not limited to the hexagonal shape and the area of the portion corresponding to the overlap portion 22 of the opening 20 is half the total area of the overlap portion 22 It may be any shape such as a trapezoidal shape as shown in Fig. 8, for example.

5 (b), the lens assembly 11 for a signal terminal is disposed close to the surface of the convex lens 14g on the upstream side in the traveling direction of light of the fourth lens array 18d, A second diaphragm 23 having an elliptical opening corresponding to the aperture 20 of the diaphragm 19 is formed to limit the diameter of the light beam passing through the unit lens group 15. [

The signal terminal lens assembly 11 shields the periphery of the front side convex lens 14a of the first lens array 18a and at the same time the portion outside the lens forming area surrounded by the broken line in Fig. FIG moving direction (direction of arrow a and vice versa) shown by an arrow B of the fifth signal terminal mask patterns for the same direction at least a signal terminal, a photomask 10 for a width w 1 of the area of the front and rear (13) of the forming region of arrow a It is formed so as to be the same as the direction of the width W 1 (see Fig. 4). Thus, the light passing through the signal terminal photomask 10 can be completely shielded before the movement of the signal terminal lens assembly 11 starts and after completion of the movement.

And a moving means 12 is provided to move the lens assembly 11 for signal terminals. The moving means 12 moves the signal terminal lens assembly 11 in the plane parallel to the photomask 10 for signal terminals and the stage 8 in the direction of arrow B in Fig. Electromagnetic actuators and electric motors.

A second exposure optical unit 3 is provided above the stage 8 in front of the first exposure optical unit 2 in the substrate transport direction. The second exposure optical unit 3 is for exposing a pattern of the scanning side terminal to the area of the TFT substrate 4 and includes a light source unit 23, a scanning terminal photomask 24, A lens assembly 25, and a moving means 26, as shown in Fig.

Here, the light source device 23 irradiates parallel light of the light source light having a uniform luminance distribution to a scan terminal photomask 24 to be described later. The light source device 23 of the first exposure optical unit 2, Similarly, for example, a light source made of an ultra-high pressure mercury lamp or a xenon lamp, and a photo integrator for making the luminance distribution of the light source light emitted from the light source uniform, and a light source having a uniform luminance distribution as parallel light And a condenser lens.

A photomask 24 for scanning terminals is provided on the downstream side of the light source light emitted from the light source device 23. [ As shown in Fig. 9, the scan terminal photomask 24 has a scan terminal mask pattern 27 having the same shape as that of the scanning side terminal on the transparent substrate surface. The scan terminal mask pattern 27 Is held down on the mask stage (not shown). The scan terminal photomask 24 is classified into a positive type and a negative type in accordance with the type of the photosensitive resin to be used, as in the case of the signal terminal mask pattern 13, but here, the case of the positive type will be described. Therefore, the scan terminal mask pattern 27 is formed of an opaque film, and the light is allowed to pass through the region outside the scan terminal mask pattern 27.

A scan terminal lens assembly 25 is provided between the scan terminal photomask 24 and the stage 8 of the transfer means 1. This scan terminal terminal lens assembly 25 forms an image of equal magnification of the scan terminal mask pattern 27 formed on the scan terminal photomask 24 on the surface of the TFT substrate 4, (Microlenses) 28a to 28h as shown in Fig. 10 (b) are arranged in the normal direction of the scanning lens 24 for the scan terminal photomask 24 And the inside of the plane parallel to the scanning photomask 24 and the stage 8 is moved by the moving means 26 to be described later in the drawing (Direction perpendicular to the substrate transport direction indicated by arrow A).

A specific example of the configuration of the scan terminal lens assembly 25 is shown in Fig. 10A in such a manner that the scan terminal lens assembly 25 is orthogonal to the moving direction of the scan terminal lens assembly 25 (in the direction of arrow C in Fig. 10) direction (e. g., 150㎛ pitch) of the plurality of unit lens group 29, the pitch P 3 of the lens array columns (30), for the pitch P 4 (for example in the direction of movement indicated by the arrow C by, 150㎛ pitch And one of the lens rows 30 adjacent to each other so that a part of each unit lens group 29 of each lens row 30 overlaps with each other as viewed in the moving direction (the direction of the arrow C) The rows 30 are arranged in the arrangement direction of the unit lens group 29 at a pitch of 1 / m (m is an integer of 2 or more, and m = 3 in FIG. 10) of the arrangement pitch P 3 of the plurality of unit lens groups 29 ) By a predetermined amount.

10 (b), the scan-terminal lens assembly 25 includes first, second, and third lens groups 28, 28 formed on the front and back surfaces of the transparent substrate to form a plurality of convex lenses 28, 3 and the fourth lens arrays 31a to 31d are overlapped and joined together in a state in which the optical axes of the corresponding convex lenses 28 are aligned with each other and the optical axis of the scan terminal mask pattern 27 of the scan terminal photomask 24 And to form an intermediate overlaid image between the second lens array 31b and the third lens array 31c. In this case, the unit lens group 29 is composed of the eight convex lenses 28a to 28h arranged with the optical axes aligned with each other. The configuration of the scanning terminal lens assembly 25 is the same as that of the signal terminal lens assembly 11 of the first exposure optical unit 2 and therefore the concrete configuration of the unit lens group 29 and the convex The description of the function of the lens 28 will be omitted. 10, reference numeral 32 denotes a first diaphragm, reference numeral 33 denotes an opening of the first diaphragm 32, and reference numeral 34 denotes a second diaphragm.

The scanning terminal lens assembly 25 shields the periphery of the front convex lens 28a of the first lens array 31a and at the same time the portion outside the lens forming area surrounded by the broken line in Fig. the width of the arrow a and the direction perpendicular to the same mask pattern 27 for the injection terminal of the at least scanning terminal photomask 24 for the width w 2 of the direction forming area of the region before and after the moving direction indicated by an arrow C in Fig. 10 W 2 (See Fig. 9). Thus, the light passing through the scanning terminal photomask 24 can be completely shielded before the start of movement of the scanning terminal lens assembly 25 and after completion of the movement.

A moving means 26 is provided to move the lens assembly 25 for a scanning terminal. The moving means 26 moves the lens assembly 25 for a scanning terminal in the direction of the arrow C in FIG. 2 in a plane parallel to the scan mask 24 for the scan terminals and the stage 8, An electromagnetic actuator or a motorized stage (8).

Next, the operation of the exposure apparatus thus constructed will be described.

A TFT substrate 4 on which a signal line and an exposure pattern of a scanning line are formed in advance is positioned and placed at a predetermined position on the stage 8 by another exposure apparatus and then the transfer means 1 And moves the stage 8 at a constant speed in the direction of arrow A in Fig. 1 to transport the TFT substrate 4 in the same direction. At this time, the light sources of the first and second exposure optical units 2 and 3 are turned on.

Next, a reference mark (not shown) provided in advance on the TFT substrate 4 is detected by imaging means (not shown) provided on the side opposite to the substrate carrying direction with respect to the first exposure optical unit 2, The movement distance of the stage 8 is measured by the position sensor based on the position of the stage 8 at the detection time. The stage-side terminal forming region 6 of the TFT substrate 4 is moved just below the signal terminal photomask 10 of the first exposure optical unit 2, The movement of the stage 8 is stopped.

Subsequently, the moving means 12 of the first exposure optical unit 2 is driven to start the movement of the signal terminal lens assembly 11 in the direction of arrow B in Fig. 1, and to move continuously in the same direction 4) of the signal terminal mask pattern 13 of the signal terminal photomask 10 shown in Fig. 4 is formed on the surface of the TFT substrate 4 by the plurality of unit lens groups 15 So that an exposure pattern of the signal side terminal is formed in the signal side terminal formation region 6 of the TFT substrate 4. [

6, the area corresponding to the overlapped portion 22 in the limited exposure area defined by the aperture 20 of the first diaphragm 19 of the unit lens group 15 is formed as an arrow Is exposed by the two unit lens groups 15 existing in the moving direction of the signal terminal lens assembly 11 indicated by B in FIG. Thereby, the exposure pattern of the signal side terminal is continuously connected without interruption. In this case, in the aperture 20 of the first diaphragm 19, the portion corresponding to the overlap portion 22 is formed such that the area thereof is half of the total area of the overlap portion 22, Exposure of a predetermined depth is performed by the overlap exposure of the group 15, and there is no possibility of over exposure.

When the signal terminal terminal lens forming body 11 is moved a predetermined distance and the signal terminal terminal forming region 6 of the TFT substrate 4 is formed with the entire exposure pattern of the signal terminal mask pattern 13, 12 are stopped and the stage 8 starts to move, and the transport of the TFT substrate 4 is resumed.

The TFT substrate 4 is moved a predetermined distance so that the scanning side terminal formation region 7 of the TFT substrate 4 is directly under the scanning terminal photomask 24 of the second exposure optical unit 3 The movement of the stage 8 is stopped.

Subsequently, the moving means 26 of the second exposure optical unit 3 is driven to start the movement of the scanning-terminal lens assembly 25 in the direction of the arrow C in Fig. 2, 9) of the scan terminal mask pattern 27 of the scan terminal photomask 24 shown in Fig. 9 is formed on the surface of the TFT substrate 4 by the plurality of unit lens groups 29 (see Fig. 10) And the exposure pattern of the scanning side terminal is formed in the scanning side terminal formation region 7 of the TFT substrate 4. [

At this time, the region corresponding to the overlapped portion in the limited exposure region by the aperture 33 of the first diaphragm 32 of the unit lens group 29 is the region corresponding to the overlapped portion in the signal terminal of the first exposure optical unit 2 As in the case of the lens assembly 11 for use in the present invention, the two unit lens groups 29 existing in the moving direction of the scanning-terminal lens assembly 25 indicated by the arrow C in Fig. As a result, the exposure patterns of the scanning side terminals are continuously connected without interruption. In this case, the portion corresponding to the overlap portion in the opening 33 of the first diaphragm 32 is, like the first diaphragm 19 of the first exposure optical unit 2, the area of which is half the total area of the overlap portion The exposure is performed at a predetermined depth by the overlapping exposure of the two unit lens groups 29, and there is no fear of over exposure.

When the scanning terminal lens assembly 25 moves a predetermined distance and the entire exposure pattern of the scan terminal mask pattern 27 is formed in the scanning side terminal formation region 7 of the TFT substrate 4, The means 26 is stopped and the exposure for the TFT substrate 4 is completed. Thereafter, the movement of the stage 8 is resumed, and the TFT substrate 4 is discharged to the outside.

In the above-described embodiment, the description has been given of the case where only one set of the lens arrays 16 and 30 including the three lens arrays 11 and 25 for the signal terminals and the scan terminals is provided. However, The present invention is not limited to this and even if a plurality of the three rows of lens rows 16 and 30 are provided and arranged in a moving direction of the lens assembly 11 and 25 for the signal terminal and the scanning terminal good. In this case, multiple exposures are performed by the unit lens groups 15 and 29 which are present on the line parallel to the moving direction. Thereby, the moving speed of the lens assembly 11, 25 for the signal terminals and the scanning terminals can be increased, and the tact of the exposure process can be shortened. In addition, the power of the light source to be used can be reduced.

In the above embodiment, a case has been described in which the exposure pattern of the signal side terminal and the scanning side terminal is formed on one liquid crystal display TFT substrate 4, but the present invention is not limited to this, As shown in Fig. 11, a plurality of display panels (each having a length of 8 pieces and a width of 8 pieces) on one surface of a large-area substrate 35 are provided with an exposure pattern 36 of a signal side terminal and a scanning side terminal It is also possible to apply the present invention to the case of forming the electrode. 12, the plurality of first and second exposure optical units 2 and 3 are arranged alternately in the direction orthogonal to the substrate transport direction (the direction of arrow A) corresponding to the display panel 36, respectively Eight units are required. 13 (a), when the signal terminal or the scanning side terminal of each display panel 36 has a different pattern shape, a signal having a plurality of signal terminal mask patterns 13 The photomask 24 for a scan terminal having a plurality of kinds of scan terminal mask patterns 27 may be applied as shown in Fig. 13 (b).

When the shapes of the signal side terminal and the scanning side terminal of each display panel 36 are different from each other, the signal terminal mask pattern of the signal terminal photomask 10 for the predetermined display panel 36, for example, The photomask 10 for a signal terminal is moved in the direction of the arrow B to switch to the next signal terminal mask pattern 13, And the other display panel 36 may be exposed using the mask pattern 13 for the signal terminals. The signal terminal photomask 10 is moved in the direction of the arrow B and the signal terminal mask patterns 13 are sequentially switched so that the signal terminal photomask 10 is moved to the corresponding display panel 36 Exposure may be performed. Similarly, for the scanning terminal photomask 24, when the exposure using the mask pattern 27 for the scan terminal, for example, for the predetermined display panel 36 is completed, the substrate 35 is moved by a predetermined distance The photomask 24 for the scan terminal is moved in the direction of the arrow C to switch to the next scan terminal mask pattern 27 and the other scan pattern is formed on the other display panel 36 ) May be performed. The other display panel 36 may be switched to another scan terminal mask pattern 27 and the scan terminal mask pattern 27 may be used for exposure.

In the above embodiment, the description has been given of the case where the TFT substrate 4 is formed by crossing exposure patterns of a plurality of signal lines and scanning lines longitudinally and laterally in the display area 5 by another exposure apparatus. However, The third exposure optical unit for forming the exposure pattern of the signal line and the scanning line on the TFT substrate 4 may be provided on the side opposite to the substrate transport direction with respect to the first exposure optical unit 2. In this case, in the third exposure optical unit, two mask pattern groups made up of two types of mask patterns having different required resolving power such as electrode wirings and signal lines and scanning lines of the thin film transistors are formed on the light-shielding film formed on one surface of the transparent substrate, And the mask pattern is formed on the other surface of the TFT substrate 4 (corresponding to the mask pattern of the electrode wiring of the thin film transistor having the high resolution required) among the two types of mask patterns having different required resolution on the other surface ) On the side of the TFT substrate 4 side, and the light source light is intermittently irradiated to the photomask at a predetermined time interval Two types of mask patterns of the photomask are formed on the substrate 4 for TFTs being transported at a constant speed in the direction of the arrow A in Fig. It is preferable that the exposure is performed by a laser beam.

A specific example of the configuration of the photomask used here is such that a mask pattern group composed of a mask pattern for electrode wiring of a thin film transistor having a high required resolution has the plurality of mask patterns in a direction substantially perpendicular to the transfer direction And a plurality of mask pattern lines formed by arranging the mask patterns of the TFT substrate 4 in a straight line at a predetermined pitch, and a plurality of exposure patterns formed by the mask pattern columns positioned on the leading side of the TFT substrate 4 in the carrying direction The succeeding mask pattern lines may be formed so as to be shifted by a predetermined dimension in the array direction of the plurality of mask patterns so as to be complemented by a plurality of exposure patterns formed by the subsequent mask pattern lines.

In the above embodiment, the case where the TFT substrate 4 is exposed while moving in one direction has been described. However, the present invention is not limited to this case, and the TFT substrate 4 may be exposed in a two- good.

In the above description, the case where the substrate 4 is a TFT substrate is described. However, the present invention is not limited to this, and any substrate may be used as long as it is intended to form an acyclic pattern.

4: TFT substrate
8: Stage
10: Photomask for signal terminal
11: Lens assembly for signal terminals
13: mask pattern for signal terminal
14, 14a to 14h, 28, 28a to 28h:
15, 29: unit lens group
16, 30: Lens column
17a, 31a: a first lens array
17b, 31b: a second lens array
17c, and 31c: a third lens array
17d and 31d: a fourth lens array
19, 32: 1st diaphragm
20, 33: opening
22: overlap portion (a portion overlapping the opening of the adjacent first stop)
23, 34: Second stop
24: Photomask for scan terminal
25: Lens assembly for scanning terminals
27: mask pattern for scanning terminals

Claims (11)

A stage for carrying the object to be exposed in one direction,
A photomask in which a mask pattern having the same shape as the exposure pattern exposed on the surface of the object held on the stage is formed,
A unit lens group disposed between the photomask and the stage and configured by arranging a plurality of convex lenses in a direction normal to the photomask so as to form an image of equal magnification of the mask pattern formed on the photomask on the surface of the object, A plurality of lens assemblies arranged in a plane parallel to the surfaces of the photomask and the object held on the stage;
And a moving means for moving the lens assembly in a plane parallel to the surface of the photomask and the photomask on the stage while the movement of the stage is in a stop state,
And a light shielding film formed on one side of the transparent substrate at a side opposite to the carrying direction of the object to be exposed with respect to the photomask above the stage and arranged in at least one row at a predetermined interval in a direction orthogonal to the conveying direction of the object, The exposure apparatus according to claim 1, further comprising another photomask on which another mask pattern is formed, wherein the light source light is intermittently irradiated to the other photomask at a predetermined time interval to expose the other mask pattern to the object to be exposed at a predetermined cycle The exposure apparatus comprising: The lens assembly according to claim 1, wherein the lens assembly has a plurality of rows of lens columns arranged at a predetermined pitch in the moving direction, the lens columns having a plurality of the unit lens groups arranged at a predetermined pitch in a direction orthogonal to the moving direction thereof, Wherein one lens train of the lens train adjacent to each other is shifted by a predetermined amount in the direction of arrangement of the unit lens groups so that a part of each unit lens group of the lens train overlaps with each other, . The lens assembly according to any one of claims 1 to 3, wherein the lens assembly comprises first, second, third and fourth lens arrays formed by forming a plurality of convex lenses on the front and back surfaces of a transparent substrate, Wherein the second lens array and the third lens array are configured so as to form an intermediate overlaid image of the mask pattern of the photomask between the second lens array and the third lens array while simultaneously superimposing the optical axes. The lens assembly according to claim 3, wherein the lens assembly is provided with a first diaphragm having an opening of a predetermined shape close to the surface of the convex lens located on the upstream side in the traveling direction of light of the third lens array, Is limited to the central portion of the lens. 5. The lens barrel according to claim 4, wherein the opening of the first diaphragm is a rectangular opening when viewed in a plan view, and an area of a portion of the opening overlapping with a part of the opening of the first diaphragm, And a part of the light-shielding portion is shielded to half the entire area. 4. The exposure apparatus according to claim 3, wherein the lens assembly is provided with a second diaphragm which limits the diameter of the light beam in proximity to the lens surface on the upstream side in the traveling direction of light of the fourth lens array. The method according to claim 1, wherein said another photomask comprises two mask pattern groups each consisting of two types of mask patterns different in the required resolution from each other on a light-shielding film formed on a surface of said transparent substrate opposite to said object to be exposed, And a micro lens for projecting the mask pattern onto the object to be projected in correspondence with the mask pattern having a high required resolution, out of two kinds of mask patterns having different required resolving power, on the surface facing the object to be inspected Wherein the exposure apparatus is configured to form the exposure apparatus. The mask pattern group according to claim 7, wherein the mask pattern group having a mask pattern with a high required resolution has a plurality of mask patterns formed by arranging the plurality of mask patterns in a straight line at a predetermined pitch in a direction orthogonal to a conveying direction of the object to be imaged And a plurality of exposure patterns formed by a mask pattern column positioned at a leading side of the object in the conveying direction of the object to be inspected are complemented by a plurality of exposure patterns formed by a subsequent mask pattern column, Wherein the plurality of mask patterns are arranged such that the pattern rows are shifted by a predetermined dimension in the arrangement direction of the plurality of mask patterns. 2. The display device according to claim 1, wherein the object to be exposed is a substrate for a thin film transistor of a display device,
The other photomask is to expose two kinds of mask patterns having different required resolving powers in a display area at the center of the substrate for the thin film transistor at a predetermined cycle. Among the two types of mask patterns having different required resolution, A mask pattern for an electrode wiring of a thin film transistor, wherein a mask pattern having a low required resolution is a signal line for supplying a signal to the thin film transistor and a mask pattern for a scan line,
Wherein the photomask is provided with a terminal mask pattern connected to the signal line or the scanning line in an area outside the display area of the substrate for the thin film transistor. delete delete
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CN102640058A (en) 2012-08-15
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US9122171B2 (en) 2015-09-01
JP2011118155A (en) 2011-06-16

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