KR101724640B1 - Apparatus for light exposure with laser - Google Patents

Apparatus for light exposure with laser Download PDF

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Publication number
KR101724640B1
KR101724640B1 KR1020150103306A KR20150103306A KR101724640B1 KR 101724640 B1 KR101724640 B1 KR 101724640B1 KR 1020150103306 A KR1020150103306 A KR 1020150103306A KR 20150103306 A KR20150103306 A KR 20150103306A KR 101724640 B1 KR101724640 B1 KR 101724640B1
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KR
South Korea
Prior art keywords
mask
substrate
line beam
laser
stage
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KR1020150103306A
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Korean (ko)
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KR20170012658A (en
Inventor
남궁복
류상길
문진배
Original Assignee
주식회사 필옵틱스
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Priority to KR1020150103306A priority Critical patent/KR101724640B1/en
Publication of KR20170012658A publication Critical patent/KR20170012658A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Abstract

An embodiment of the present invention relates to a semiconductor device comprising: a stage for supporting a substrate; A mask holder fixedly mounted with a patterned mask and spaced apart from the upper surface of a substrate mounted on the stage and spaced apart from the substrate at a predetermined interval or less; A UV laser irradiator for irradiating UV laser light in the form of a line beam; And a control unit scanning the UV laser beam in a direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask.

Description

[0001] Apparatus for light exposure with laser [0002]

The present invention relates to an exposure apparatus using a laser, and more particularly to a laser exposure apparatus for patterning a substrate.

2. Description of the Related Art In general, a semiconductor device, a liquid crystal display (LCD), a plasma display panel (PDP), a circuit board (PCB) ), Etc., a photolithography method is widely used in order to precisely form fine patterns in the manufacturing process.

The photolithography method includes: forming a photosensitive material film by uniformly applying a photo-resist on a substrate to be processed; selectively exposing the formed photosensitive material film to exposure light to change the properties of the photosensitive material Forming a desired photosensitive material film pattern by selectively removing a portion having a changed property by using a developer or the like, and then forming a desired photosensitive material film pattern using a photosensitive material film pattern formed thereon, Thereby forming a pattern on the processed substrate.

An exposure process belonging to a photolithography process is a process in which a reticle or a mask designed with a specific pattern is positioned between a light source and a substrate to be processed and light is irradiated from the light source to the substrate to be processed, Or selectively exposing the substrate to be processed according to the pattern on the mask M

In general, a near-field exposure apparatus using a mask (M) uses a high-power UV mercury lamp as a light source because it exposes a large area at a time at a UV wavelength. A proximity exposure apparatus using a UV lamp reflects a beam emitted from a UV lamp as an elliptical light and focuses the light on a fly-eye lens.

The beam passing through the fly-eye lens is made into a parallel beam by the spherical mirror while spreading widely. The parallel beam passes through a mask (M) engraved with a fine pattern to expose a fine pattern on the substrate. The minimum pattern size to be exposed is determined by the exposure wavelength lambda and the distance g between the mask M and the substrate.

In addition, the fly-eye lens and the UV beam reflected on the spherical surface have a collimation angle angle. Since the beam passing through the mask pattern spreads at the CA angle, the exposure pattern becomes large. For example, if the distance between the mask M and the substrate is 100 mu, and the CA is 2 DEG, the beam passing through the mask pattern spreads by 6 mu m or more to expose the pattern.

Further, in the proximity exposure apparatus using a UV lamp, when the glass mask having a large area is used, the mask is sagged by the weight of the mask (M). Since the distance between the mask M and the substrate can not be uniformly maintained over the entire exposure area due to deflection of the mask M, the size of the exposed pattern can not be kept constant over the entire area, Can not be reduced below size. The near-field exposure apparatus using the UV lamp developed now has a mask-to-substrate distance of more than 100 μm and a CA angle of 0.5 ° with a resolution of 7 μm to 8 μm.

Therefore, it is difficult to develop a near-field exposure apparatus capable of exposing a pattern having a resolution of 5 um if the distance between the mask M and the substrate is 50 μm or less and the CA angle is kept at 0.5 ° or less

Korean Patent Publication No. 10-2005-0114469

An object of the present invention is to provide an exposure apparatus for patterning a substrate as a light source other than a UV lamp. Another object of the present invention is to prevent exposure pattern defects due to warping of a large substrate.

An embodiment of the present invention relates to a semiconductor device comprising: a stage for supporting a substrate; A mask holder fixedly mounted with a patterned mask and spaced apart from the upper surface of a substrate mounted on the stage and spaced apart from the substrate at a predetermined interval or less; A UV laser irradiator for irradiating UV laser light in the form of a line beam; And a control unit scanning the UV laser beam in a direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask.

The UV laser irradiator includes a UV laser light source for emitting UV laser light; And a laser optical system for condensing the UV laser light emitted from the UV laser light source and irradiating the UV laser light in the form of a line beam.

The laser exposure apparatus includes a UV laser irradiation unit transferring unit for transferring the UV laser irradiation unit forward and backward in a direction perpendicular to the longitudinal direction of the line beam, And a pattern is formed on the substrate through exposure of the entire area of the mask by transferring the laser beam in forward and backward directions in a direction perpendicular to the longitudinal direction of the line beam.

The laser exposure apparatus comprising: a stage transfer unit capable of transferring the stage forward and backward in a direction perpendicular to the longitudinal direction of the line beam; And a mask holder transferring unit for transferring the mask holder forward and backward in a direction perpendicular to the longitudinal direction of the line beam, wherein the control unit controls the stage transferring unit and the mask holder transferring unit, And the pattern is formed on the substrate through exposure of the entire area of the mask by simultaneously moving back and forth in the direction perpendicular to the longitudinal direction of the line beam.

When the spacing distance is 100 탆 or less, the width of the line beam may have a thickness of 5 탆 to 20 탆

The laser exposure apparatus may include a spacing interval correcting unit that corrects the interval between the substrate and the mask to be the same while the line beam is scanned in the mask.

Wherein the spacing distance compensator comprises: a curvature radius database storing curvature curvatures of the mask; At least one first actuator capable of supporting a bottom surface of a stage at one end in the scanning direction of the line beam and varying the length of the top and the bottom of the stage; One or more second actuators supporting the bottom surface of the stage at the other end in the scanning direction of the line beam and varying the length of the upper and lower sides; And a curvature-corresponding actuator driving module for varying the vertical lengths of the first actuator and the second actuator such that the spacing between the substrate and the mask is the same as the curvature of curvature during scanning of the UV laser irradiator .

Wherein the spacing distance compensator comprises at least one first actuator capable of supporting a bottom surface of a stage at one end in a scanning direction of a line beam and varying a vertical length; One or more second actuators supporting the bottom surface of the stage at the other end in the scanning direction of the line beam and varying the length of the upper and lower sides; An interval measuring sensor for measuring the interval between the substrate and the mask in real time; And a measurement gap for varying the lengths of the first and second actuators so that the gap between the substrate and the mask is the same as the gap between the substrate and the mask is received while the scanning of the UV laser irradiator is performed, And a corresponding actuator drive module.

Wherein the spacing distance compensator comprises: a curvature radius database storing curvature curvatures of the mask; And a plurality of support pins protruding from the upper surface of the stage, wherein the lengths of the support pins are different from each other such that the spacing between the substrate and the mask is equal to the spacing between the substrate and the mask in accordance with the curvature of curvature .

According to the embodiment of the present invention, the accuracy of patterning can be improved by irradiating UV laser light in the form of a line beam and patterning. Further, according to the embodiment of the present invention, the interval between the substrate and the mask can be uniformly corrected, and the patterning efficiency can be increased.

1 is a perspective view illustrating an arrangement structure of an internal structure of a laser exposure apparatus according to an embodiment of the present invention.
2 is an exploded perspective view schematically showing an internal configuration of a laser exposure apparatus according to an embodiment of the present invention.
3 is a conceptual diagram showing a state in which a line beam is scanned and irradiated to an entire area of a mask according to an embodiment of the present invention.
4 is a conceptual view showing a state in which a large mask is warped.
5 is a perspective view illustrating an example of the operation of the interval gap correcting unit according to the correction of the first embodiment of the present invention.
6 is a cross-sectional view showing an example of the operation of the interval gap correcting unit according to the correction of the first embodiment of the present invention.
7 is a conceptual diagram of a gap interval correction unit according to the correction of the second embodiment of the present invention.
FIG. 8 is a conceptual diagram of a gap interval correction unit according to the third embodiment of the present invention. FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, in order to explain the present invention in detail so that those skilled in the art can easily carry out the present invention. . Other objects, features, and operational advantages of the present invention, including its effects and advantages, will become more apparent from the description of the preferred embodiments. It should be noted that the same reference numerals are used to denote the same or similar components in the drawings.

FIG. 1 is a perspective view showing an arrangement structure of an internal structure of a laser exposure apparatus according to an embodiment of the present invention, FIG. 2 is an exploded perspective view schematically showing an internal structure of a laser exposure apparatus according to an embodiment of the present invention And FIG. 3 is a conceptual diagram showing a state in which a line beam is scanned and irradiated to an entire area of a mask according to an embodiment of the present invention.

The case 100 includes a base support 110 which forms a support structure for the entire device, and a case cover (not shown) coupled to an upper portion of the base support 110 to surround an entire periphery of the device. 1 and 1, a separate support frame T may be mounted on the upper portion of the base support 110 so that each component can be mounted and supported.

The stage 200 is a substrate support for supporting the substrate S such that the pattern formation surface of the substrate S faces upward. The substrate S is placed on the stage 200, and a film for patterning may be laminated on the upper surface, which is the patterning surface of the substrate S.

The stage 200 is formed so that the substrate S is seated thereon, and a plurality of the stages 200 are provided so as to be aligned in the X-axis direction on the horizontal plane. Each of the substrates S (S) is subjected to an exposure process in a state where the substrate S is fixed to the stage 200.

Further, the stage 200 can be linearly transported on a horizontal plane, and can be transported in the X-axis direction when the laser beam scanning is performed in the X-axis direction. To this end, the stage 200 is also provided with a transfer unit 210 to horizontally transfer the substrate S in the X-axis direction. The stage 200 conveying unit 210 is provided with horizontal conveying means such as a guide rail capable of conveying the substrate S in the scanning direction.

The mask holder 400 is formed to be fixedly mounted with a patterned mask M and is disposed between the stage 200 and the optical unit 300, respectively. Therefore, when the light by the optical unit 300 is irradiated toward the stage 200, the mask M passes through the mask M so that the mask M is placed on the substrate S that is seated on the stage 200, (M) is formed by exposure.

The mask holder 400 is spaced apart from the upper surface of the substrate S mounted on the stage 200 and spaced apart from the substrate S by a predetermined interval or less.

. In the case of the substrate S having a size of 450 x 350 mm, the spacing distance between the substrate S and the mask holder 400 is preferably 100 μm or less.

The mask holder transferring portion 410 can transfer the mask holder 400 in the forward and backward directions in the direction perpendicular to the longitudinal direction of the line beam. For example, the mask holder transfer unit 410 may be provided with horizontal transfer means such as a guide rail capable of transferring the mask holder 400 in the scanning direction.

The UV laser irradiator 300 functions to irradiate laser light of UV (ultraviolet ray) in the form of a line beam. As shown in Fig. 3, the line beam of the UV laser light is irradiated in the form of a line and is irradiated in a curtain shape with a vertical or slight inclination to the substrate S. The substrate S is horizontally transported in a direction perpendicular or slightly inclined with respect to the surface of the line beam so that UV laser light can be irradiated on the entire surface of the substrate S in the form of a line beam.

The UV laser irradiator 300 includes a laser optical system 310 for collecting UV laser light emitted from a UV laser light source (not shown) and irradiating the UV laser light in the form of a line beam, . ≪ / RTI >

The reason why the UV laser light source (not shown) is used as the laser light source is that since the beam divergence is significantly smaller than that of the UV lamp, the spread angle after passing through the mask M is significantly smaller than that of the UV lamp optical system. In addition, UV laser light has a beam quality of 25 or more because it has a higher beam quality than an ordinary laser. However, since the coherence of a laser having a large beam quality is low, the diffraction phenomenon is reduced at a certain distance. These lasers are representative of Eximer lasers, but also high power fiber lasers and DPSS type lasers. Such a laser is provided with a laser optical system 310 which increases the uniformity of the beam illuminance and makes it into a line beam shape because the coherency remarkably decreases. The laser optical system 310 may be a homogenizer that increases the uniformity of the beam illuminance, and a fly-eye lens (or a cylindrical lens array) used in a UV lamp optical system may be used. For reference, the laser optical system 310 may include a reflector 320, and the reflector 320 reflects a line beam emitted from a fly-eye lens of the laser optical system 310 toward the mask M to irradiate the mask.

As described above, in the case of the substrate S having a size of 450 x 350 mm, the spacing between the substrate S and the mask holder 400 is preferably 100 m or less. At this time, Is preferably variable in thickness from 5 to 20 mm,

The UV laser irradiator feeder 500 can feed the UV laser irradiator 300 forward and backward in the direction perpendicular to the longitudinal direction of the line beam. The UV laser irradiator 500 can linearly transport the UV laser irradiator 300 on a horizontal plane. When the laser beam is scanned in the X axis direction, it can be transported in the X axis direction. The UV laser irradiation apparatus transfer unit 500 may be realized by various transporting means such as guide rails and cylinders.

3, the control unit (not shown) scans the UV laser irradiator 300 in a direction perpendicular to the longitudinal direction of the line beam to expose the pattern on the substrate S through the exposure of the entire area of the mask M . In order to illuminate the line beam in the scan direction, it can be implemented in two ways as follows.

One is a method in which the stage 200 is fixed and the UV laser irradiator 300 is transferred while scanning. That is, the UV laser irradiation device 500 is controlled to move the UV laser irradiation device 300 forward and backward in the direction perpendicular to the longitudinal direction of the line beam, to expose the pattern on the substrate S through the exposure of the entire area of the mask M .

In the other method, the UV laser is fixed and the stage 200 and the mask holder 400 are simultaneously transported and scanned. The stage 200 and the mask holder transferring unit 410 are controlled to move the stage 200 and the mask M back and forth simultaneously in the direction perpendicular to the longitudinal direction of the line beam, To form a pattern on the substrate S through exposure of the entire area of the substrate S.

On the other hand, when the large substrate S is patterned, as shown in FIG. 4, since the mask M must also be large, the mask M may be warped in the gravity direction due to the flatness of the mask itself or the weight of the mask . In this case, when the line beam is scanned and scanned, the distance between the mask M and the substrate S may not be the same with respect to the scan direction, thereby causing a problem that the patterning quality is not constant.

Therefore, a method of keeping the distance between the mask M and the substrate S constant is required. For this purpose, in order to maintain a constant distance between the mask M and the substrate S in the local region where the line beam is scanned, Is required. To this end, the embodiment of the present invention may include a spacing interval compensator for compensating for the spacing between the substrate S and the mask M to be the same while the line beam is being scanned on the mask M. The correction method of the interval interval correcting unit can be performed in three ways, which will be described in detail with reference to FIGS. 5 to 8. FIG.

FIG. 5 is a perspective view showing an example of the operation of the interval gap correcting unit according to the first embodiment of the present invention. FIG. 6 is a sectional view showing an operation example of the interval interval correcting unit according to the correction of the first embodiment of the present invention to be.

5 and 6 may include a curvature curvature database (not shown), a first actuator 250a, a second actuator 250b, a curvature-corresponding actuator drive module (not shown) ).

The curvature curvature database (not shown) is a database in which the curvature of curvature of the mask M is stored. When the size of the substrate S to be patterned is determined, the size of the mask M is determined. After the mask M is mounted on the mask holder, the curvature, which is the degree of curvature of the mask M, The average value of the values is stored in the database as curvature curvature.

The first actuator 250a is one or more actuators capable of supporting the bottom surface of the stage 200 at one end in the scanning direction of the line beam and varying in vertical length.

The second actuator 250b is one or more actuators capable of supporting the bottom surface of the stage 200 at the other end in the scanning direction of the line beam and varying in vertical length.

The actuator driving module (not shown) corresponding to the curvature corresponds to the curvature of curvature stored in the curvature database during scanning of the UV laser irradiator 300 so that the spacing between the substrate S and the mask M becomes equal And an actuator driving module for varying the vertical lengths of the first actuator 250a and the second actuator 250b. 6, if the curvature of curvature is too large and the distance between the substrate S and the mask M is too large, the actuator at that position is raised so that the distance between the substrate S and the mask M is set Spacing.

7 is a conceptual diagram of a gap interval correction unit according to the correction of the second embodiment of the present invention.

7, includes a first actuator 250a, a second actuator 250b, an interval measurement sensor, and a measurement gap corresponding actuator drive module (not shown).

The first actuator 250a is one or more actuators capable of supporting the bottom surface of the stage 200 at one end in the scanning direction of the line beam and varying in vertical length.

The second actuator 250b is one or more actuators capable of supporting the bottom surface of the stage 200 at the other end in the scanning direction of the line beam and varying the vertical length.

The interval measuring sensor 260 is a sensor for measuring the separation distance between the substrate S and the mask M in real time. The gap measuring sensor can measure the separation distance between the substrate S and the mask M at the point where the line beam of the line beam is scanned by using various sensing means such as image capturing and optical sensing. For example, the interval measuring sensor 260 is implemented by a camera, and a distance between the mask M and the substrate S can be photographed by using a camera. 7, a first optical sensor for emitting light to the upper surface of the mask M and a second optical sensor for emitting light to the upper surface of the substrate S , The first optical sensor and the second optical sensor are positioned at the same height. The height of the mask M can be determined using the reception time of the reflected light in the first optical sensor and the height of the substrate S can be determined using the reception time of the reflected light in the second optical sensor. The gap between the mask M and the substrate S can be determined using the difference between the height of the mask M and the height of the substrate S. [ For reference, the first optical sensor and the second optical sensor transmit and receive light several times at a predetermined interval with respect to the entire surface, and the interval of each point on the whole surface can be known. Further, when measuring the reflected light reception time of each of the mask M and the substrate S, the measurement can be performed after separating the mask holder 400 and the stage 200 from each other.

The actuator driving module (not shown) corresponding to the measurement gap receives the spacing distance measured by the interval measuring module during the scanning of the UV laser irradiator 300 so that the spacing between the substrate S and the mask M is the same The upper and lower lengths of the first actuator 250a and the second actuator 250b are changed so as to be spaced apart from each other.

FIG. 8 is a conceptual diagram of a gap interval correction unit according to the third embodiment of the present invention.

The spacing distance correction unit according to the correction of the third embodiment shown in FIG. 8 adjusts the height of the plurality of support pins 270 in accordance with the shape of the substrate S by using the plurality of support pins 270. To this end, the spacing interval correcting unit (not shown) includes a curvature database in which the curvature of curvature of the mask M is stored, and a plurality of support pins 270 protruding from the upper surface of the stage 200. The lengths of the support pins 270 are designed to be different from each other such that the spacing between the substrate S and the mask M is equal to the curvature of curvature. It is possible to make the gap between the mask M and the substrate S equal by positioning the substrate S on the stage 200 so as to have the curvature of curvature equal to the curvature of the mask M. [

5 to 7 may be configured to support the bottom surface of the stage 200 by the operation of the first actuator 250a and the second actuator 250b to move the substrate S By adjusting the tilt, the gap between the mask M and the substrate S at the scanned point is made equal. The spacing distance correction unit shown in FIG. 8 may adjust the slope of the substrate S by making the height of the plurality of support pins 270 different according to the shape of the substrate S by using the plurality of support pins 270 , And the distance between the mask M and the substrate S at the scanned point is made equal.

In order to adjust the gap between the mask M and the substrate S in the same manner, a single system using only one of the system of the actuators 250a and 250b and the system of the support pins 270, A combination method in which all of them are applied can be used.

The slope of the substrate S in the scan direction (e.g., the X-axis direction) and the scan direction of the substrate S in the scan direction The inclination of the substrate S in the direction (Y-axis direction) perpendicular to the direction of the substrate S is realized in a single manner of adjusting only through the driving of the first actuator 250a and the second actuator 250b. Similarly, the tilt of the substrate S in the scanning direction (e.g., the X-axis direction) and the tilt of the substrate S in the direction (Y-axis direction) .

The inclination of the substrate S in the scanning direction (for example, the X-axis direction) may be determined by a combination of the actuators 250a and 250b and the support pin 270, And the slope of the substrate S in the direction (Y-axis direction) perpendicular to the scan direction is adjusted by using the support pins 270. The substrate S is supported by the support pins 270 and the first and second actuators 250a and 250b. Similarly, the slope of the substrate S in the scanning direction (e.g., the X-axis direction) is adjusted through the support pin 270, and the slope of the substrate S in the direction (Y-axis direction) And is adjusted using the first actuator 250a and the second actuator 250b.

The embodiments of the present invention described above are selected and presented in order to facilitate the understanding of those skilled in the art from a variety of possible examples. The technical idea of the present invention is not necessarily limited to or limited to these embodiments Various changes, modifications, and other equivalent embodiments are possible without departing from the spirit of the present invention.

S: substrate
M: Mask
200: stage
210:
250a: first actuator
250b: second actuator
300: UV laser irradiator
400: mask holder
410: mask holder transfer part

Claims (9)

A stage for supporting a substrate;
A mask holder fixedly mounted with a patterned mask and spaced apart from the upper surface of a substrate mounted on the stage and spaced apart from the substrate at a predetermined interval or less;
A UV laser irradiator for irradiating UV laser light in the form of a line beam;
A control unit for scanning the UV laser irradiator in a direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask; And
And a mask for correcting a gap between the substrate and the mask so that the gap is the same while the line beam is scanned in the mask,
Wherein the separation interval corrector comprises:
A curvature curvature database storing a curvature of curvature of the mask;
At least one first actuator capable of supporting a bottom surface of a stage at one end in the scanning direction of the line beam and varying the length of the top and the bottom of the stage;
One or more second actuators supporting the bottom surface of the stage at the other end in the scanning direction of the line beam and varying the length of the upper and lower sides;
A curvature-corresponding actuator driving module for varying the lengths of the first actuator and the second actuator such that the gap between the substrate and the mask is equal to the curvature of curvature during scanning of the UV laser irradiator; And
And a plurality of support pins protruding from the upper surface of the stage so as to support the substrate,
The lengths of the support pins are designed to be different from each other such that the spacing between the substrate and the mask is the same as the curvature of the mask in a direction perpendicular to the scan direction of the line beam,
Wherein the slope of the substrate in the scan direction of the line beam is adjusted through operation of the actuator module corresponding to the curvature and the slope of the substrate in the direction perpendicular to the scan direction of the line beam is adjusted through the support pin Laser exposure apparatus.
The UV laser irradiation apparatus according to claim 1,
A UV laser light source for emitting UV laser light; And
A laser optical system for condensing the UV laser light emitted from the UV laser light source and irradiating the UV laser light in the form of a line beam;
Wherein the laser exposure apparatus comprises:
The laser exposure apparatus according to claim 1,
And a UV laser irradiator for transferring the UV laser irradiator forward and backward in a direction perpendicular to the longitudinal direction of the line beam,
Wherein the control unit controls the UV laser irradiator to transport the UV laser beam in the direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask, .
The laser exposure apparatus according to claim 1,
A stage transfer unit capable of forward and backward transfer of the stage in a direction perpendicular to the longitudinal direction of the line beam; And
And a mask holder transfer unit capable of transferring the mask holder back and forth in a direction perpendicular to the longitudinal direction of the line beam,
Wherein the control unit controls the stage transferring unit and the mask holder transferring unit to move the stage and the mask forward and backward in the direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask Wherein the laser beam is irradiated with a laser beam.
The method according to claim 1,
Wherein the width of the line beam is variable to a thickness of 5 to 20 mm when the spacing distance is 100 m or less.
delete delete A stage for supporting a substrate;
A mask holder fixedly mounted with a patterned mask and spaced apart from the upper surface of a substrate mounted on the stage and spaced apart from the substrate at a predetermined interval or less;
A UV laser irradiator for irradiating UV laser light in the form of a line beam;
A control unit for scanning the UV laser irradiator in a direction perpendicular to the longitudinal direction of the line beam to form a pattern on the substrate through exposure of the entire area of the mask; And
And a mask for correcting a gap between the substrate and the mask so that the gap is the same while the line beam is scanned in the mask,
Wherein the separation interval corrector comprises:
At least one first actuator capable of supporting a bottom surface of a stage at one end in the scanning direction of the line beam and varying the length of the top and the bottom of the stage;
One or more second actuators supporting the bottom surface of the stage at the other end in the scanning direction of the line beam and varying the length of the upper and lower sides;
An interval measuring sensor for measuring the interval between the substrate and the mask in real time;
A measurement gap corresponding to the length of the first actuator and the length of the second actuator is varied so that the interval between the substrate and the mask is the same as the interval between the substrate and the mask, An actuator drive module; And
And a plurality of support pins protruding from the upper surface of the stage so as to support the substrate,
The lengths of the support pins are designed to be different from each other such that the spacing between the substrate and the mask is the same as the curvature of the mask in a direction perpendicular to the scan direction of the line beam,
Wherein the slope of the substrate in the scanning direction of the line beam is controlled through the operation of the measurement gap corresponding actuator driving module and the slope of the substrate in the direction perpendicular to the scanning direction of the line beam is adjusted through the support pin .
delete
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JP2010243680A (en) * 2009-04-03 2010-10-28 V Technology Co Ltd Exposure method and exposure apparatus

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