KR101720864B1 - Manufacturing method of light emitting diode and the light emitting diode - Google Patents

Manufacturing method of light emitting diode and the light emitting diode Download PDF

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KR101720864B1
KR101720864B1 KR1020150088654A KR20150088654A KR101720864B1 KR 101720864 B1 KR101720864 B1 KR 101720864B1 KR 1020150088654 A KR1020150088654 A KR 1020150088654A KR 20150088654 A KR20150088654 A KR 20150088654A KR 101720864 B1 KR101720864 B1 KR 101720864B1
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semiconductor layer
forming
based semiconductor
nitride
nanowire
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KR1020150088654A
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KR20170000054A (en
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이종람
김범준
박재용
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포항공과대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present invention relates to a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device. A method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention includes: forming a nitride based semiconductor layer; Forming a plurality of structures on or in the nitride based semiconductor layer; And forming a nanowire over each of the plurality of structures.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor light-

The present invention relates to a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device thereof. More particularly, the present invention relates to a method of manufacturing a semiconductor light emitting device, A method of fabricating a semiconductor light emitting device that improves the light extraction efficiency by additionally forming a nano-sized pattern using a ZnO nanowire growth technique on a pre-formed structure, and a semiconductor light emitting device thereof.

White light source Gallium nitride light emitting diode has high energy conversion efficiency, long life, high directivity of light, low voltage drive, no preheating time and complicated driving circuit, strong against impact and vibration, It is expected to be a solid-state lighting light source to replace existing light sources such as incandescent lamps, fluorescent lamps, and mercury lamps within the next five years because it can realize a high-quality lighting system. In order to replace gallium nitride light emitting diode as a conventional white light source in place of conventional mercury vapor lamp or fluorescent lamp, it is required not only to have excellent thermal stability but also to emit high output light even at low power consumption. For this reason, studies are underway to improve the surface patterning of light emitting diodes in order to emit high output light.

In order to improve light output in such a light emitting diode, a part that can be greatly improved is patterning where light is emitted. In the case where the outgoing light is smooth, a high light output can not be expected because a large part of the light generated in the active layer can not escape to the outside due to the total reflection occurring at the atmosphere / semiconductor layer interface. Therefore, it is necessary to artificially deform the surface of the semiconductor layer to prevent the total reflection from occurring, and to exit the light with a minimum loss to maximize the light extraction efficiency.

From this point of view, surface roughening such as forming photonic crystals by periodically arranging pores or protrusions of several hundred nm to several um in size through lithography on the surface of a semiconductor, or forming a pyramidal hexagonal pyramid on the surface layer, ), The light extraction efficiency to the outside of the device can be remarkably increased.

Conventional techniques for improving light extraction efficiency include forming patterns of various shapes by etching an element surface using an etching mask or forming a pattern of a pyramidal cone shape on a surface of a device using PCE (photochemical etching), which is a wet etching method Efficiency improvement. However, even if a pattern is formed on the surface of the device, it is difficult to completely emit light generated in the active layer into the air due to a large refractive index difference between the air and the nitride semiconductor. Also, as shown in FIG. 1, it is practically difficult to uniformly form a pattern on the entire surface at the time of pattern formation on the surface of the nitride semiconductor, so that some total internal reflection occurs due to the flat surface existing between the patterns, .

Patent Document 1: Korean Patent Publication No. 10-2010-0091856 (Aug. 19, 2010)

In order to solve the reduction of the light extraction efficiency due to the total internal reflection generated in the optical device despite the nitride semiconductor surface harmonic structure, a nano-sized pattern is additionally formed on the pre-formed structure using ZnO nanowire growth technology, A method of manufacturing a semiconductor light emitting device that improves efficiency, and a semiconductor light emitting device.

A method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention includes: forming a nitride based semiconductor layer; Forming a plurality of structures on or in the nitride based semiconductor layer; And forming a nanowire over each of the plurality of structures.

Here, the nitride based semiconductor layer may include an n-type nitride gallium based semiconductor layer and a p-type nitride gallium based semiconductor layer.

In addition, the forming of the structure may form the plurality of structures on the upper surface of the n-type nitride gallium-based semiconductor layer.

In addition, the forming the structure may include forming an oxide layer on the p-type nitride gallium-based semiconductor layer; And forming the plurality of structures on the oxide layer.

In addition, the oxide layer may include one of ITO, IGO, IZO, and ZnO.

The nitride based semiconductor layer may include the n-type nitride gallium based semiconductor layer on which the structure is laminated on the patterned sapphire substrate.

In the forming the structure, the nitride-based semiconductor layer transferred with the structure pattern of the sapphire substrate and the sapphire substrate may be separated from each other to form the structure.

In addition, the structure may be one of a cone, a bipolar cone, and a polygonal cone formed by wet etching the nitride based semiconductor layer.

In addition, the wet etching method uses one of NaOH solution and KOH solution, and the concentration of the solution may be 1M to 32M.

In addition, the structure may be formed by dry etching using an etching mask.

Further, the etching mask may use one of photoresist (PR), nickel metal dot, and nano spear.

In addition, the structure may be formed with a diameter of 300 nm to 50 um.

Further, in the step of forming the nanowire, the nanowire may be grown on the upper surface of the nitride semiconductor layer by hydrothermal synthesis to form the additional nanostructure.

In addition, the nanowire may be formed of zinc oxide (ZnO).

The nanowire may have a diameter of about 1 nm to about 300 nm and a length of about 10 nm to 1 um.

In addition, in the step of forming the nanowire, the density and diameter of the nanowire can be controlled by surface treatment of at least one of ultraviolet ozone and oxygen plasma on the nitride based semiconductor layer.

The method may further include plasma etching the structure using the nanowire as an etching mask to form a composite nanostructure.

The plasma etching may use one selected from Cl 2 , BCl 3 , O 2 , N 2 , Ar, CF 4, and CH 4 , or a mixed gas thereof.

In addition, the composite nanostructure can be formed with a diameter of 5 nm to 300 nm and an etching depth of 10 nm to 1 um.

A semiconductor light emitting device according to an embodiment of the present invention is manufactured by the above-described method of manufacturing a semiconductor light emitting device.

The present invention relates to a method of forming a ZnO nanowire on a surface of a patterned nitride semiconductor using hydrothermal synthesis or by forming an additional nanostructure on the entire surface by etching a grown ZnO nanowire using a plasma, A method of manufacturing a semiconductor light emitting device, and a semiconductor light emitting device therefor.

In addition, the present invention can adjust the size of the nanostructure according to changes in surface treatment, solution concentration, growth time, growth temperature, etc. as conditions for growing ZnO nanowires and can be applied to nitride semiconductor patterns of any shape have.

In addition, the present invention can be immediately applied to a manufacturing process of a gallium nitride-based light emitting device, and can be applied to both a vertical light emitting device structure and a horizontal light emitting device structure.

FIG. 1 is a view for explaining the limitations of the pyramidal nanostructures formed by the most typical wet etching.
2 is a view illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.
Fig. 3 is a cross-sectional view showing the process steps of the manufacturing method shown in Fig. 2. Fig.
4 is a scanning electron microscope (SEM) image showing the change in the shape of ZnO nanowires according to the treatment time and growth time of ultraviolet ozone (UVO) on the surface of the nitride semiconductor layer.
FIG. 5 is a scanning electron microscope (SEM) image showing the shape change of the composite nanostructure when the plasma etching depth is changed after the nanowire growth.
6 to 8 are views showing the structure and optical path of the semiconductor light emitting device.
FIG. 9 is a view for explaining a change in optical characteristics of a light emitting diode when the wet-etched vertical nitride light-emitting diode is subjected to the surface treatment of UVO treatment time and the ZnO nanowire growth time.
10 is a graph showing changes in the radiation flux value when ZnO nanowires are grown on a vertical type nitride light emitting diode in which pyramidal cones are formed by wet etching and then additional nanostructures are formed by plasma etching.

Hereinafter, the present invention will be described more specifically based on preferred embodiments of the present invention. However, the following embodiments are merely examples for helping understanding of the present invention, and thus the scope of the present invention is not limited or limited.

In the present invention, a sphere is used to mean not only a sphere having a mathematical definition of a three-dimensional shape consisting of all points at the same distance from a point but also a shape having a round shape.

2 is a view illustrating a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view showing the process steps of the manufacturing method shown in Fig. 2. Fig.

2 and 3, a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention includes forming a nitride based semiconductor layer (S110), forming a nitride based semiconductor layer or a plurality of structures on the nitride based semiconductor layer (S130) forming a nanostructure on each of the plurality of structures to form an additional nanostructure (S130), and forming a composite nanostructure by etching the plurality of structures using the nanowire as an etching mask (S140).

The semiconductor light emitting device according to an embodiment of the present invention may have a vertical structure or a horizontal structure. Here, for convenience of explanation, a semiconductor light emitting device having a vertical structure is shown. A p-type electrode 110, a p-type nitride semiconductor layer 120, an active layer 130, and an n-type nitride semiconductor Layer 140 may be stacked.

In step S110, the nitride semiconductor layer 120 can be formed by laminating the p-type nitride semiconductor layer 120, the active layer 130, and the n-type nitride semiconductor layer 140. Here, each of the p-type nitride semiconductor layer 120 and the n-type nitride semiconductor layer 140 may be formed of a p-type nitride gallium based (GaN) material and an n-type nitride gallium based (GaN) material.

In step S120, a plurality of structures 150 may be formed on the surface of the nitride based semiconductor layer or a plurality of structures 150 may be formed on the nitride based semiconductor layer, depending on the structure of the semiconductor light emitting device.

If the semiconductor light emitting device has a vertical structure, a plurality of structures 150 may be formed on the surface of the n-type nitride based semiconductor layer 140 including the n-type nitride gallium based material. Here, the plurality of structures 150 may be formed in the form of a cone, a cone, or a polygonal horn on the surface of the n-type nitride semiconductor layer 140 by wet etching or dry etching using an etching mask. For example, the plurality of structures 150 may be formed as pyramid-shaped cones.

At this time, the wet etching can be performed by using a NaOH solution or a KOH solution and setting the concentration of the solution to about 1M to about 32M. When the concentration of the solution is less than about 1 M, the size of the structure 150 is small and the reaction does not occur well. When the concentration of the solution is more than about 32 M, the size of the structure 150 is large, .

The dry etching may be performed using an ICP (Inductive Coupled Plasma) etching apparatus, and the etching mask may be PR (photo resist), Ni metal dot, or various nanospheres.

Each of the plurality of structures 150 thus formed may have a diameter of about 300 nm to about 50 mu m. At this time, each of the plurality of structures 150 should be formed to have a diameter of about 300 nm or more because it has to be larger than the size of the structure to be additionally formed. In addition, when each of the plurality of structures 150 is formed with a diameter of less than about 50 nm, the light extraction efficiency may not increase greatly.

If the semiconductor light emitting device has a horizontal structure, it may further include forming an oxide layer on the p-type nitride based semiconductor layer 120 for current spreading, and forming a plurality of structures on the oxide layer . Here, the oxide layer may be formed of one selected from ITO, IGO, IZO, and ZnO on the p-type nitride semiconductor layer 120.

In step S130, a plurality of ZnO nanowires may be grown on the entire surface of the semiconductor light emitting device having a plurality of structures formed thereon by hydrothermal synthesis to form additional nanostructures 160. [

For example, the hydrothermal synthesis method uses a solution of zinc nitride (ZnN) and hexamethylenetetramine (HMTA) in a ratio of 1: 1, and a solution temperature of about 90 ° C to about 100 ° C, A solution concentration of 100 mM, and a growth time of about 30 minutes to about 5 hours.

In addition, the ZnO nanowire 160 can be grown to a diameter of about 1 nm to about 300 nm and a length of about 10 nm to about 1 um. The nanowire 160 having a diameter of less than 1 nm is not easily grown and can not act as an etching mask and the nanowire 160 having a size of about 300 nm or more is different in size from the preform 150 It is difficult to expect the technical effect of the present invention. It is difficult to expect the nanowire 160 having a length of less than about 10 nm to act as an etching mask and if the etching of the formed structure 150 proceeds more than about 1 μm, the possibility of leakage current to the semiconductor light emitting device increases A nanowire 160 of about 1 um or less is suitable.

At this time, when the nitride semiconductor layer is surface-treated with ultraviolet ozone (UVO) or O 2 plasma, the density and diameter of ZnO nanowires can be controlled.

4 is a scanning electron microscope (SEM) image showing the change in the shape of ZnO nanowires according to the treatment time and growth time of ultraviolet ozone (UVO) on the surface of the nitride semiconductor layer.

Referring to FIG. 4, when the UVO treatment time increases in step S130, the number of nucleation sites increases, and the density of the ZnO nanowires increases and the size of the nanowires decreases. In addition, as the growth time increases, the length of the ZnO nanowire increases. When the UVO treatment time is long and the growth time is long, the nanowire grows at the high density nucleation site. When the nanowire is merged with the surrounding nanowire, . Accordingly, the shape of the additional nanostructure 160 can be easily controlled according to the growth conditions of the ZnO nanowires in the nitride semiconductor layer.

Meanwhile, after the additional nanostructure 160 is formed by performing the process up to step S130 according to the embodiment, the semiconductor light emitting device can be completed through an isolation step, an n-type electrode, or a p-type electrode forming step.

In step S140, the nanowire 160 may be used as an etching mask, and the plurality of structures 150 may be plasma-etched to form the composite nanostructure 170. The plasma etching may use one selected from Cl 2 , BCl 3 , O 2 , N 2 , Ar, CF 4 and CH 4 , or a mixed gas thereof.

Here, the composite nanostructure 170 may have a diameter of about 1 nm to about 300 nm and an etching depth of about 10 nm to 1 um. At this time, it is difficult to form the composite nanostructure 170 with a diameter of less than about 1 nm. When the diameter of the composite nanostructure 170 is more than about 300 nm, the shape of the formed structure 150 disappears. In addition, if the etching depth of the composite nano structure 170 is about 1um or more, it may cause leakage current of the semiconductor light emitting device.

FIG. 5 is a scanning electron microscope (SEM) image showing the shape change of the composite nanostructure when the plasma etching depth is changed after the nanowire growth.

Referring to FIG. 5, a plurality of ZnO nanowires may be grown on a nitride semiconductor layer having a plurality of structures formed thereon, and then etched using a plasma etching method. Here, as the etching depth increases, composite nanostructures can be clearly formed in each of a plurality of structures. The shape of the composite nano structure can be easily changed according to the etching conditions as shown in FIG.

The semiconductor light emitting device manufactured by the above-described manufacturing method can remarkably improve the light extraction efficiency as compared with the conventional semiconductor light emitting device shown in FIG. 6 as shown in the light path shown in FIGS.

Since the conventional semiconductor light emitting device of FIG. 6 has a small critical angle due to a large difference between a large refractive index (n = 2.5) and an air refractive index (n = 1) of the nitride semiconductor, the light generated in the active layer is totally totally internally transferred, And the light extraction efficiency is low. In addition, the conventional semiconductor light emitting device of FIG. 6 has a plurality of structures formed on the surface, showing an increased chance that light can escape to the outside due to the scattering effect. By the flat surface between a plurality of structures, Is generated.

On the other hand, the semiconductor light emitting device of FIG. 7 shows a path of light generated inside when additional nanostructures 160 are formed by growing ZnO nanowires on a plurality of structures, and the semiconductor light emitting device of FIG. It shows the path of light generated internally when a composite nanostructure with a smaller size than the preformed structure is formed on the entire surface by performing etching using the ZnO nanowire grown on the structure as a mask.

The semiconductor light emitting device according to an embodiment of the present invention can uniformly and densely form additional nanostructures 160 or nanostructures of nanowires smaller than the emission wavelength region of the nitride based semiconductor layer to reduce the flat surface between the structures, It is possible to extract the light generated from the inside to the maximum.

FIG. 9 is a view for explaining a change in optical characteristics of a light emitting diode when the wet-etched vertical nitride light-emitting diode is subjected to the surface treatment of UVO treatment time and the ZnO nanowire growth time.

FIG. 9 compares the light quantities of a semiconductor light emitting device having only a structure and a semiconductor light emitting device having nanostructures formed by growing a nanostructure on the structure. The light quantity of the semiconductor light emitting device having only the structure is set to a constant 1 for convenience of explanation.

When the UVO treatment time is 150 seconds or less, the optical characteristics change is about 1% of the light emitting diode having the pyramidal cone. However, when the ZnO nanowire grows further on the front side due to the increase of processing time to 300 seconds, The amount of light increased up to about 3.1%. When the UVO treatment time is prolonged, the nanowires are merged to increase the size of the nanowire, and the shape of the nanowire covers the entire surface, so that the light amount decreases again.

10 is a graph showing changes in the radiation flux value when ZnO nanowires are grown on a vertical type nitride light emitting diode in which pyramidal cones are formed by wet etching and then additional nanostructures are formed by plasma etching.

In FIG. 10, the radiation linear velocity increases as the etching depth increases. When the etching depth is about 300 nm, the radiation linear velocity increases up to 3.4% compared with about 426 mW of the radiation flux of the semiconductor light emitting device having only the structure have.

Techniques for forming additional nanostructures through ZnO nanowire growth and plasma etching of ZnO nanowires can be performed at a low temperature without deterioration of the device, using a hydrothermal synthesis method capable of large area, and using general plasma etching techniques It is possible to improve the efficiency of the light emitting diode and it is not necessary to use any additional expensive process. Therefore, it can be very effective in terms of large area application and manufacturing cost.

The method for fabricating a semiconductor light emitting device according to an embodiment of the present invention can complete the semiconductor light emitting device through an isolation step, an n-type electrode, or a p-type electrode forming step after the process described above.

A method of fabricating a semiconductor light emitting device according to an embodiment of the present invention includes forming a ZnO nanowire on a surface of a formed nitride semiconductor by hydrothermal synthesis to form additional nanostructures, By using the surface etching, additional nanostructures can be formed on the whole surface, which can lead to a higher light extraction efficiency by the composite nanostructure.

In addition, the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention can adjust the size of a nanostructure according to changes in surface treatment, solution concentration, growth time, growth temperature, And can be applied to nitride semiconductor patterns of any shape.

In addition, the method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention can be immediately applied to a manufacturing process of a gallium nitride based light emitting device which is widely used at present, and can be applied to both vertical and horizontal light emitting devices .

According to another aspect of the present invention, there is provided a method of fabricating a semiconductor light emitting device, comprising: laminating an n-type nitride gallium-based semiconductor layer on a semiconductor substrate having a structure patterned thereon and forming a gallium nitride semiconductor layer including an n-type nitride gallium- Layer is formed and then the sapphire substrate is separated by a laser to transfer the structure pattern to the n-type nitride gallium-based semiconductor layer.

Next, nanowires can be grown on the n-type nitride gallium-based semiconductor layer transferred with the structure pattern to form additional nanostructures.

Next, the nanowire can be used as an etching mask, and the structure can be plasma-etched to form a composite nano structure.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is a matter of course that various modifications and variations are possible without departing from the scope of the technical idea of the present invention by anyone having ordinary skill in the art.

100: substrate
110: p-type electrode
120: a p-type nitride-based semiconductor layer
130: active layer
140: an n-type nitride semiconductor layer
150: Structure
160: Additional nanostructures
170: Composite nanostructures

Claims (20)

Forming a nitride-based semiconductor layer;
Forming a plurality of structures having a three-dimensional shape on or in the surface of the nitride-based semiconductor layer or on the nitride-based semiconductor layer;
Forming a nanowire over each of the plurality of structures; And
Forming a composite nanostructure by plasma etching the structure using the nanowire as an etching mask;
And forming a second electrode on the semiconductor layer.
The method according to claim 1,
Wherein the nitride based semiconductor layer comprises an n-type nitride gallium based semiconductor layer and a p-type nitride gallium based semiconductor layer.
3. The method of claim 2,
Wherein the forming of the structure comprises forming the plurality of structures on the upper surface of the n-type nitride gallium-based semiconductor layer.
3. The method of claim 2,
The step of forming the structure
Forming an oxide layer on the p-type nitride gallium-based semiconductor layer; And
And forming the plurality of structures on the oxide layer.
5. The method of claim 4,
Wherein the oxide layer comprises one of ITO, IGO, IZO, and ZnO.
3. The method of claim 2,
Wherein the nitride-based semiconductor layer comprises the n-type nitride gallium-based semiconductor layer laminated on a sapphire substrate patterned with a structure having a three-dimensional shape on the inside or outside of the surface.
The method according to claim 6,
Wherein the step of forming the structure separates the sapphire substrate from the nitride based semiconductor layer to which the structure pattern of the sapphire substrate is transferred, thereby forming the structure.
The method according to claim 1,
Wherein the structure is one of a cone, a cone, and a polygonal pyramid formed by wet-etching the nitride-based semiconductor layer.
9. The method of claim 8,
Wherein the wet etching method uses one of NaOH solution and KOH solution, and the concentration of the solution is 1M to 32M.
The method according to claim 1,
Wherein the structure is formed by dry etching using an etching mask.
11. The method of claim 10,
Wherein the etching mask is one of a photoresist (PR), a nickel metal dot, and a nanosphere.
The method according to claim 1,
Wherein the structure is formed with a diameter of 300nm to 50um.
The method according to claim 1,
Wherein the nanowire is grown on the upper surface of the nitride based semiconductor layer by hydrothermal synthesis to form an additional nanostructure.
14. The method of claim 13,
Wherein the nanowire is formed of zinc oxide (ZnO).
14. The method of claim 13,
Wherein the nanowire has a diameter of 1 nm to 300 nm and a length of 10 nm to 1 mu m.
14. The method of claim 13,
Wherein the step of forming the nanowire comprises adjusting the density and the diameter of the nanowire through surface treatment of at least one of ultraviolet ozone and oxygen plasma to the nitride based semiconductor layer.
delete The method according to claim 1,
Wherein the plasma etching uses one selected from the group consisting of Cl 2 , BCl 3 , O 2 , N 2 , Ar, CF 4 and CH 4 or a mixed gas thereof.
The method according to claim 1,
Wherein the composite nanostructure has a diameter of 5 nm to 300 nm and an etching depth of 10 nm to 1 um.
A semiconductor light emitting device manufactured by any one of claims 1 to 16, 18 and 19.
KR1020150088654A 2015-06-22 2015-06-22 Manufacturing method of light emitting diode and the light emitting diode KR101720864B1 (en)

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