KR101714751B1 - Ingot growing apparatus - Google Patents
Ingot growing apparatus Download PDFInfo
- Publication number
- KR101714751B1 KR101714751B1 KR1020150051949A KR20150051949A KR101714751B1 KR 101714751 B1 KR101714751 B1 KR 101714751B1 KR 1020150051949 A KR1020150051949 A KR 1020150051949A KR 20150051949 A KR20150051949 A KR 20150051949A KR 101714751 B1 KR101714751 B1 KR 101714751B1
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- pull chamber
- ingot
- rotation axis
- growing apparatus
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
An ingot growing apparatus is presented. The ingot growing apparatus according to an embodiment of the present invention includes a main chamber including a crucible for containing a raw material and a heater for heating the furnace to melt the raw material, a dome chamber provided on the crucible, And a door including a tubular pull chamber installed at an upper portion of the chamber and a tubular pull chamber extending in an upward direction, a body positioned on an outer surface of the pull chamber, and a hinge portion provided on one side of the body to rotatably support the body, , The hinge portion includes a first member rotatable about a first rotation axis parallel to the extending direction of the pull chamber, one side coupled to the first member so as to be rotatable about a second rotation axis parallel to the first rotation axis, And a second member coupled to the body.
Description
The present invention relates to an ingot growing apparatus.
Generally, a single crystal ingot is manufactured by a Czochralski crystal growth method (CZ method). More specifically, a crucible provided in a hot zone region is filled with a solid raw material such as polysilicon, heated and melted by an electric heater to melt, and then a single crystal seed is hung from a seed connector and brought into contact with a melt Slowly rotate and raise. Then, the seed connector is pulled up in the order of a neck part, a shoulder part whose diameter increases, a cylindrical body part of a constant diameter, and finally a tail part whose diameter is reduced a single crystal ingot is obtained.
The ingot growing apparatus for growing a single crystal ingot in the above manner comprises a main chamber provided with a cooling means, a quartz crucible provided inside the main chamber for melting polysilicon, a graphite crucible for supporting a quartz crucible, A pedestal for supporting a crucible and a graphite crucible, an electrothermal heater for heating a crucible, a power supply means for supplying a large electric power to the electrothermal heater, a driving shaft for driving, lifting and lowering the crucible and a pedestal, A dome chamber installed above the main chamber, a gate valve and viewport installed in the dome chamber, a pull chamber installed above the dome chamber, and an ingot impression cable installed in the pull chamber. And a Seed Mechanism.
The ingot growing apparatus may further comprise vacuum means for maintaining the vacuum chamber in the pull chamber, the dome chamber and the main chamber, a cooling means for cooling the ingot, a sensing means for sensing the state required for the ingot growth, A control means, a measurement means, and the like.
However, in the conventional ingot growing apparatus, the door which can selectively see the inside of the pull chamber is installed at the center of the pull chamber, but it is difficult to completely seal the door and the pull chamber, so that it is difficult to maintain the vacuum in the pull chamber.
An embodiment of the present invention is to provide an ingot growing apparatus for keeping the inside of a chamber in a vacuum state.
An embodiment of the present invention is to provide an ingot growing apparatus capable of confirming whether or not a process of an ingot is smooth.
One embodiment of the present invention is to provide an ingot growing apparatus that facilitates cleaning in a chamber after the ingot process is completed.
According to an aspect of the present invention, there is provided a plasma display panel comprising: a main chamber including a crucible for containing a raw material and a heater for heating the crucible to melt the raw material; A dome chamber installed at an upper portion of the crucible; A tubular pull chamber installed at an upper portion of the dome chamber and extending in an upward direction, a body positioned at an outer side of the pull chamber, and a body installed at one side of the body for rotatably supporting the body, Wherein the hinge portion includes a first member rotatable about a first rotation axis parallel to an extending direction of the pull chamber and a second rotation axis parallel to the first rotation axis, And a second member having one side coupled to the first member and the other side spaced apart from the body and configured to be rotatable around the second rotation axis.
The ingot growing apparatus may further include an O-ring formed on one surface of the body to seal between the body and the outer surface of the pull chamber in a state where the body is closed on the outer surface of the pull chamber.
The ingot growing apparatus may be formed such that the other surface of the body facing the one surface of the first member is spaced apart from one surface of the first member.
The ingot growing apparatus may have a protruding wall protruding outwardly of the pull chamber along the periphery of the opening of the pull chamber outer surface on which the door is formed and an outer surface of the protruding wall corresponding to one surface of the body . ≪ / RTI >
The ingot growing apparatus may have a flat surface on one side of the body.
The ingot growing apparatus may further include a pressing member installed on the first member and capable of pressing the other surface of the body.
The ingot growing apparatus may further include a coupling handle formed on the other side of the body so that the other side of the body is fixed to one side of the outer surface of the pull chamber.
The ingot growing apparatus according to an embodiment of the present invention can be kept in a vacuum state inside the pull chamber.
The ingot growing apparatus according to an embodiment of the present invention can increase the contact force with the pull chamber even when the door is not flat.
The ingot growing apparatus according to an embodiment of the present invention can confirm whether or not the ingot process progresses smoothly inside the pull chamber.
1 is a side view showing an ingot growing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a portion of an ingot growing apparatus according to an embodiment of the present invention.
3 is a perspective view illustrating a pull chamber of an ingot growing apparatus according to an embodiment of the present invention.
4 is a plan view showing a pull chamber of the ingot growing apparatus according to an embodiment of the present invention.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.
1 is a side view showing an ingot growing apparatus according to an embodiment of the present invention. 2 is a cross-sectional view illustrating a portion of an ingot growing apparatus according to an embodiment of the present invention. 3 is a perspective view illustrating a pull chamber of an ingot growing apparatus according to an embodiment of the present invention. 4 is a plan view showing a pull chamber of the ingot growing apparatus according to an embodiment of the present invention. Hereinafter, the ingot growing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. In the description of the ingot growing apparatus according to an embodiment of the present invention, the ingot growing apparatus will be described focusing on the constitution of the present invention, and the invention of the ingot growing apparatus according to the embodiment of the present invention The detailed description of the same configuration as that of the known configuration is omitted.
Referring to FIG. 1, an ingot growing apparatus according to an embodiment of the present invention includes a
The
Referring to FIG. 1, a
The
Referring to FIG. 1, a
According to an embodiment of the present invention, a
Referring to FIG. 2, the
The
The
2, the
Referring to FIG. 2, the
The
A decelerator (not shown) is installed between the
Referring to FIG. 3, in an ingot growing apparatus according to an embodiment of the present invention, the
3 and 4, one
According to an embodiment of the present invention, a
3, a
More specifically, the
3, the fixing
3, the
The
3 and 4, the other surface 71b of the body facing the one surface of the
3, the pressing
3, the coupling handle 87 may be formed on the other side of the
The engaging
When the
The
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
10: ingot growing apparatus 11: melt
13: ingot 15: seed
20: Base 30: Main chamber
31: heater 32: main chamber support
33: crucible 50:
51: housing 52: lift hole
53: drum 55: support roller
57: Seed cable 59: Driving motor
70: Door 71: Body
71a: one surface of the body 71b:
73: hinge part 75: pin member
C1: first rotating shaft 77: first member
C2: second rotation shaft 79: fixing member
80:
81:
82: protruding wall 83: O-ring
85: pressing member 86: space
87: engaging knob 90: dome chamber
Claims (7)
A dome chamber installed at an upper portion of the crucible;
A tubular pull chamber provided on the upper portion of the dome chamber and extending upward,
And a door provided on one side of the body for rotatably supporting the body and having a hinge portion formed to increase contact force between the body and the pull chamber,
The hinge portion
A first member rotatable about a first rotation axis parallel to the extending direction of the pull chamber,
A second member having one side coupled to the first member such that the first member is rotatable about a second rotation axis parallel to the first rotation axis, and a second member disposed on the other side of the body and rotatable about the second rotation axis, Containing ingot growth apparatus.
And an O-ring formed on one surface of the body to seal between the body and the outer surface of the pull chamber in a state where the body is closed on the outer surface of the pull chamber.
And the other surface of the body facing the one surface of the first member is spaced apart from one surface of the second member.
A protruding wall protruding outwardly of the pull chamber is formed in the opening of the outer surface of the pull chamber where the door is formed,
And an outer surface of the protruding wall corresponds to one surface of the body.
Wherein one surface of the body is flat.
And a pressing member installed on the first member and capable of pressing the other surface of the body.
And an engaging portion formed on the other side of the body so that the other side of the body is fixed to one side of the outer surface of the pull chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150051949A KR101714751B1 (en) | 2015-04-13 | 2015-04-13 | Ingot growing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150051949A KR101714751B1 (en) | 2015-04-13 | 2015-04-13 | Ingot growing apparatus |
Publications (2)
Publication Number | Publication Date |
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KR20160121991A KR20160121991A (en) | 2016-10-21 |
KR101714751B1 true KR101714751B1 (en) | 2017-03-22 |
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KR1020150051949A KR101714751B1 (en) | 2015-04-13 | 2015-04-13 | Ingot growing apparatus |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102502863B1 (en) | 2022-09-28 | 2023-02-23 | 비씨엔씨 주식회사 | Cylindrical silicon ingot manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106676629B (en) * | 2017-02-09 | 2023-05-30 | 洛阳金诺机械工程有限公司 | Door catch structure for artificial crystal furnace |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004010363A (en) * | 2002-06-03 | 2004-01-15 | Shin Etsu Handotai Co Ltd | Apparatus for manufacturing single crystal |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20090078045A (en) * | 2008-01-14 | 2009-07-17 | 주식회사 실트론 | Apparatus of manufacturing silicon single crystal ingot |
CN102202814A (en) * | 2008-08-28 | 2011-09-28 | Amg艾迪卡斯特太阳能公司 | Systems and methods for monitoring a solid-liquid interface |
KR101243579B1 (en) * | 2010-07-02 | 2013-03-20 | 조원석 | Upper-docking type raw material supply apparatus for continuous growing single crystals |
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2015
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004010363A (en) * | 2002-06-03 | 2004-01-15 | Shin Etsu Handotai Co Ltd | Apparatus for manufacturing single crystal |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102502863B1 (en) | 2022-09-28 | 2023-02-23 | 비씨엔씨 주식회사 | Cylindrical silicon ingot manufacturing method |
KR20240044301A (en) | 2022-09-28 | 2024-04-04 | 비씨엔씨 주식회사 | Cylindrical silicon ingot manufacturing method |
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KR20160121991A (en) | 2016-10-21 |
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