KR101712387B1 - Method for improving property of graphite boards surface - Google Patents

Method for improving property of graphite boards surface Download PDF

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Publication number
KR101712387B1
KR101712387B1 KR1020150049703A KR20150049703A KR101712387B1 KR 101712387 B1 KR101712387 B1 KR 101712387B1 KR 1020150049703 A KR1020150049703 A KR 1020150049703A KR 20150049703 A KR20150049703 A KR 20150049703A KR 101712387 B1 KR101712387 B1 KR 101712387B1
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South Korea
Prior art keywords
silicon
graphite
graphite substrate
substrate
reactor
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KR1020150049703A
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Korean (ko)
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KR20160120844A (en
Inventor
황정태
박장식
안상철
장진석
홍대식
김동선
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(주)제너코트
삼성디스플레이 주식회사
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Priority to KR1020150049703A priority Critical patent/KR101712387B1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Abstract

The present invention relates to a method of modifying the surface characteristics of a graphite substrate, in which a graphite jig located through a reaction furnace is connected to a cooling furnace, and a cool air transferred from the cooling furnace to the graphite jig, The graphite substrate is transferred to a substrate to cool the graphite substrate, injecting silicon in a powdery state into the reactor, forming the reactor in a vacuum, maintaining the temperature of the reactor at a predetermined temperature, Of silicon is vaporized into gaseous silicon and the gaseous silicon is contacted to the surface of the cooled graphite substrate to be liquefied into liquid silicon and the liquefied silicon forms a solid Forming a silicon carbide coating layer through an exothermic activation reaction with carbon in the state of the graphite, And mounting on top of the substrate. As a result, the gaseous silicon adsorbed on the graphite substrate quickly changes to a liquid state by the graphite substrate connected to the cooling zone, and the silicon carbide coating layer is formed on the graphite substrate by the exothermic activation reaction of the silicon in the liquid state and the solid state carbon The surface modification characteristics of the graphite substrate are improved.

Description

METHOD FOR IMPROVING PROPERTY OF GRAPHITE BOARD'S SURFACE BACKGROUND OF THE INVENTION [0001]

The present invention relates to a method of modifying the surface properties of graphite substrates.

Conventionally, a chemical vapor deposition (CVD) method has been used in order to improve the oxidation resistance and abrasion resistance of graphite and to suppress the generation of dust in graphite. This method uses a silicon carbide composite SiC) is injected to reform the graphite surface, but the cost increases.

In addition, in the conventional chemical vapor deposition (CVD) method, silicon (Si) gas and carbon (C) gas are injected into the reaction furnace to generate a chemical reaction in the reaction furnace to be deposited on the graphite surface. .

On the other hand, the conventional chemical vapor reaction (CVR) method also has a difficulty in introducing a sufficient concentration of silicon (Si) gas into the reaction furnace. In order to overcome this problem, Lt; / RTI >

Therefore, there is a desperate need to develop another method which can suppress the generation of dust and improve the oxidation resistance and abrasion resistance of graphite, reduce the cost, and do not change the external dimension of the molded article.

SUMMARY OF THE INVENTION The present invention has been made in order to effectively modify the surface characteristics of a graphite substrate by forming a SiC coating layer on the graphite substrate uniformly and thickly.

The method for modifying the surface characteristics of a graphite substrate according to an embodiment of the present invention includes connecting a graphite jig located through a reaction furnace to a cooling furnace and cooling the cool air transferred from the cooling furnace to an upper portion of the graphite jig The graphite substrate is cooled by transferring the graphite substrate to a graphite substrate, injecting the coated silicon into the reactor, forming the reactor in a vacuum, maintaining the temperature of the reactor at a predetermined temperature, A step of vaporizing silicon in a powder state into silicon in a gaseous state, and a step in which the gaseous silicon is brought into contact with a surface of the cooled graphite substrate to be liquefied into liquid state silicon, and the liquefied silicon forms the cooled graphite substrate The silicon carbide coating layer is formed through the exothermic activation reaction with the solid state carbon, And mounting on top of the graphite substrate.

At this time, the reactor and the graphite jig are preferably made of a non-oxide based ceramic material.

In one example, it is preferable that the silicon in the powder state is contained in a honeycomb carrier having a porous structure and injected into the reactor.

In one example, the powdered silicon may be coated by centrifugal molding or dip coating.

In one example, prior to the step of forming the reactor in a vacuum and maintaining the temperature of the reactor at the set temperature and vaporizing the powdered silicon into gaseous silicon, the silicon carbide And a mask installing step of providing a mask at a portion to be shielded by the coating layer so that the gaseous silicon does not contact the surface of the graphite substrate provided with the mask.

In one example, the mask installed in the mask mounting step is formed of a non-oxidized material, and is formed to have a thickness of 3 mm or less to prevent the shadow effect.

According to this aspect, since the graphite substrate is located in the upper part of the graphite jig which is located inside the reaction furnace and connected to the cooling furnace, and the silicon (Si) powder injected into the reactor is vaporized and liquefied on the surface of the graphite substrate, A silicon carbide (SiC) coating layer is uniformly formed on the upper portion. This has the effect of improving the strength and hardness characteristics of the graphite substrate surface.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a substrate for explaining a method for modifying surface characteristics of a graphite substrate according to an embodiment of the present invention; FIG.
2A is a diagram illustrating a structure for performing a method of modifying surface characteristics of a graphite substrate according to an embodiment of the present invention.
FIG. 2B is a view illustrating a structure for performing a method of modifying surface characteristics of a graphite substrate according to another embodiment of the present invention. Referring to FIG.
2C is a diagram illustrating a structure for performing a method for modifying the surface characteristics of a graphite substrate according to another embodiment of the present invention.
FIG. 3 is a view showing a connection relationship between a reactor and a graphite jig in a structure for carrying out a method of modifying the surface characteristics of a graphite substrate according to an embodiment of the present invention.
4 is a flowchart illustrating a method of modifying surface characteristics of a graphite substrate according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

A method for modifying the surface characteristics of a graphite substrate according to an embodiment of the present invention will now be described with reference to the accompanying drawings.

First, with reference to FIG. 1, a substrate for explaining a method of modifying the surface characteristics of a graphite substrate according to an embodiment of the present invention will be described. As shown in Fig. 1, the substrate has a graphite substrate 10 and a silicon carbide (SiC) coating layer 11 located on the graphite substrate 10.

The vacuum furnace 100 has a structure for forming the silicon carbide coating layer 11 with reference to FIGS. 2A and 2B. The vacuum furnace 100 includes a reactor (not shown) 40, a graphite jig 20 located in the reactor 40, a graphite substrate 10 located above the graphite jig 20, and at least one honeycomb carrier 50.

The vacuum furnace 100 is formed at a vacuum of 10 -1 torr, and the reactor 40 is set at a temperature of 1500 ° C to 2000 ° C.

The cooling furnace 60 is positioned to surround the reaction furnace 40, and the cooling water 61 moves along the inside of the cooling furnace 60. As a result, the object contacting the cooling furnace (60) can be cooled.

The reaction furnace 40 is formed in a closed hexahedron shape. At this time, since the reaction furnace 40 has the closed structure, the efficiency of forming the silicon carbide coating layer 11 formed by the exothermic reaction of the silicon and the carbon increases in the reaction furnace 40.

At this time, a reaction heat locally occurs due to the exothermic activation reaction between silicon and carbon, and the surrounding heat is raised by the generated heat of reaction, so that the reaction of silicon and carbon progresses in a cascade.

For example, since the gaseous silicon existing in the reactor 40 having a closed structure moves in a limited space, when the silicon is moved in the unsealed space, the upper portion of the graphite substrate 10 There is an effect that the time for coating is shortened.

In addition, since the reaction furnace 40 is formed in a closed structure, the degree of vacuum is increased.

The graphite jig 20 is a jig for supporting the graphite substrate 10 and is formed to include a graphite material having high density in order to ensure excellent thermal conductivity.

In one example, the graphite jig 20 may be formed in a structure that passes through the reactor 40, as shown in Fig.

The graphite jig 20 is cooled by receiving the cool air from the cooling furnace 60 and the cool air transferred from the cooling furnace 60 is supplied to the graphite substrate 20 10).

2B, the graphite jig 20 further includes a body 30 connected to the graphite jig 20, and a structure in which the body 30 is connected to the cooling furnace 60 .

As a result, the body 30 is cooled by the cooling furnace 60, and the graphite jig 20 located in connection with the cooled body 30 is also cooled.

The graphite jig 20 and the reactor 40 are formed to include a non-oxide ceramic material, and may be at least one of AlN, BN, B4C, SiC, or Si3N4 as the non-oxide ceramic material.

It is possible to prevent the graphite jig 20 from being formed on the graphite substrate 10 due to the non-oxide ceramic material, (C) can be maximized.

The graphite substrate 10 is located on the graphite jig 20 and is made of graphite and pores are formed on the surface thereof to have a uniform surface roughness and the silicon carbide coating layer 11 can be formed thereon.

Each of the at least one honeycomb support (50) is provided with a silicon powder, and has a structure for containing silicon powder. The surface of the honeycomb support (50) has a porous structure having a plurality of holes.

The surface of the honeycomb carrier 50 has a porous structure so that when the powdered silicon in the inside of the honeycomb carrier 50 is in a gaseous state in accordance with a change in the internal temperature of the reaction furnace 40, The honeycomb substrate 50 is smoothly moved to the outside of the honeycomb carrier 50 through the holes formed in the surface of the honeycomb carrier 50 and thus can easily reach the upper surface of the graphite substrate 10.

At this time, it is preferable that the honeycomb carrier 50 is made of a non-oxide based ceramics having little reactivity with gaseous silicon.

At this time, the size of the silicon powder contained in the honeycomb carrier 50 is 0.1 to 100 탆, preferably 1 to 10 탆.

The silicon powder contained in the honeycomb carrier 50 may be in a solid state and coated by centrifugal molding or dip coating.

As shown in FIG. 2C, the graphite substrate 10 (10a, 10b, 10c) located inside the vacuum furnace 100 having the structure for forming the silicon carbide coating layer 11 is placed on the graphite jig 20 When each graphite substrate 10 has a structure spaced apart from each other, a mask 70 is further provided between two adjacent graphite substrates.

The mask 70 is installed in a region where the SiC coating layer should be prevented from being formed on the surface of the graphite substrate 10, that is, in a region where the SiC coating layer should be shielded on the surface of the graphite substrate 10, It is preferable that the non-oxidizing material has a thickness of 3 mm or less.

At this time, since the thickness of the mask 70 is set to 3 mm or less, it is preferable to prevent the shadow effect that may occur when the mask 70 is formed to have a thickness exceeding 3 mm.

For example, when the thickness of the mask 70 is more than 3 mm, a specific portion 12 of the surface of the graphite substrate 10, that is, graphite The silicon particles in the gaseous state may not properly touch due to the thickness of the mask 70 in the specific portion 12 of the surface of the substrate 10. [

As described above, due to the shadow effect due to the thickness of the mask 70, the silicon particles in the gaseous state do not reach the specific portion 12 of the graphite substrate 10 and the silicon carbide coating layer 11 may not be formed thereby, It is preferable to limit the thickness of the mask 70.

2C, the mask 70 has a first portion placed on the upper surface of the graphite substrate 10 and a second portion connected to the lower end of the first portion and formed in a direction perpendicular to the first portion, And a second portion formed to be inserted between the adjacent two graphite substrates 10 (10a and 10b or 10b and 10c).

As the mask 70 is formed to include the first portion and the second portion, the surface of the graphite substrate 10 using the mask 70 can be easily shielded and the mask 70 can be removed from the graphite substrate 10 There is an effect that it can be easily removed even when it is removed.

2C, the mask 70 is located between the two graphite substrates 10a and 10b, between the two graphite substrates 10b and 10c, or between the two edge portions of the graphite substrates 10a and 10c, Thereby preventing the SiC coating layer from being formed at the edge portion of the substrate 10.

Next, a process of forming the silicon carbide coating layer 11 on the graphite substrate 10 in the vacuum furnace 100 described with reference to FIGS. 2A to 2C will be described with reference to FIG.

First, the graphite jig 20 is connected to the cooling furnace 60 (S10).

At this time, the graphite jig 20 is positioned to pass through the reactor 40 as shown in Figs. 2A and 3 and is connected to the cooling furnace 60, or is connected to the cooling furnace 60 by the body 30 as shown in Fig. The graphite jig 20 is cooled by receiving the cool air from the cooling furnace 60. [

As the graphite jig 20 is cooled, the graphite substrate 10 positioned above the graphite jig 20 having good thermal conductivity is cooled.

The coated solid silicon (Si) powder is then injected into the reactor (S20). At this time, the silicon in the powder state is in a solid state and is formed in a size of 1 to 5 mm, as described above, and is injected into the reaction furnace 40 by being contained in the honeycomb carrier 50.

Then, the reaction furnace 40 is formed in a vacuum, and the internal temperature of the reaction furnace 40 is maintained at the set temperature (S30).

At this time, the inside of the reaction furnace 40 is formed with a vacuum of 10 -1 torr or less, and the temperature is maintained at 1500 ° C to 2000 ° C.

Since the inside of the reaction furnace 40 is set at such a temperature, the powdery silicon contained in the honeycomb carrier 50 becomes a gaseous state and moves in the direction of the graphite substrate 10 along the arrow, Silicon reacts with solid carbon (C) formed on the graphite substrate (10) to form a silicon carbide coating layer (11) on the graphite substrate (10) 10).

This is because the graphite substrate 10 located above the graphite jig 20 which has already been cooled by the cooling furnace 60 is also cooled so that the gaseous silicon hitting the top of the graphite substrate 10 is cooled, And the silicon in the liquid state causes an exothermic activation reaction with the carbon of the graphite substrate 10 to form the silicon carbide coating layer 11 on the inner layer of the graphite substrate 10.

At this time, by the mask 70 (70a, 70b, 70c, 70d) provided at the edge of the upper portion of the graphite substrate 10, the silicon in the gaseous state is transferred to the upper portion of the graphite substrate 10 Do not touch the part.

Therefore, since the silicon carbide coating layer 11 is not formed on a part of the surface of the graphite substrate 10 corresponding to the portion where the mask 70 is formed, the surface of the graphite substrate 10 to be shielded with the silicon carbide coating layer 11 The silicon carbide coating layer 11 can be coated on the surface portion of the graphite substrate 10 in a state in which the silicon carbide coating layer 11 is excluded from the silicon carbide coating layer 11 only on the surface of the graphite substrate 10, ) Can be formed.

With the silicon carbide coating layer 11 formed by such an operation, the strength and abrasion resistance of the graphite substrate 10 are improved, dust is suppressed, and the surface characteristics of the graphite substrate are modified.

At this time, the silicon carbide coating layer 11 has a volume expansion of about 140% as compared with the graphite substrate 10 forming only the graphite layer, and the pores formed on the surface of the graphite substrate 10 are filled up by the expanded volume, 10).

When the graphite substrate 10 including the silicon carbide coating layer 11 is used in an atmosphere of 400 ° C or higher by including the silicon carbide coating layer 11 as described above, It is possible to maintain the oxidation resistance higher than that when only the graphite substrate 10 forming the layer is formed.

At this time, the silicon carbide coating layer 11 formed on the graphite substrate 10 can be used for a press jig for glass, a wafer port, a wafer chuck operating at high temperature, or a diaphragm for a fuel cell, which is required to have oxidation resistance.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

10: graphite substrate 11: silicon carbide coating layer
20: Graphite jig 40: Reaction furnace
50: Honeycomb carrier 60: Cooling furnace
70: Mask

Claims (6)

Connecting the graphite jig located through the reaction furnace to the cooling furnace and transferring the cool air transferred from the cooling furnace to the graphite substrate located on the graphite jig to cool the graphite substrate;
Injecting powdered silicon coated on the reactor;
Forming the reactor in a vacuum and maintaining the temperature of the reactor at a predetermined temperature to vaporize the powdered silicon into gaseous silicon; And
The silicon in the gaseous state is brought into contact with the surface of the graphite substrate that is cooled to be liquefied by the liquid silicon, and the liquefied silicon is subjected to an exothermic activation reaction with the solid state carbon forming the graphite substrate, And forming a coating layer,
Wherein the silicon carbide coating layer is prevented from being formed by placing a mask between the graphite substrate and the edge portion. The method of claim 1,
Wherein the reactor and the graphite jig are made of a non-oxide based ceramic material. The method of claim 1,
Wherein the silicon in the powder state is contained in a honeycomb carrier having a porous structure and is injected into the reactor. The method of claim 1,
Wherein the powdered silicon is coated by centrifugal molding or dip coating. delete The method of claim 1,
Wherein the mask is formed of a non-oxidized material and formed to have a thickness of 3 mm or less to prevent a shadow effect.
KR1020150049703A 2015-04-08 2015-04-08 Method for improving property of graphite boards surface KR101712387B1 (en)

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KR102134406B1 (en) * 2018-11-26 2020-07-15 한국세라믹기술원 Graphite Mold with Coating layer of SiC and SiOC/C

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Publication number Priority date Publication date Assignee Title
KR100760336B1 (en) * 2006-06-22 2007-09-20 (주)글로벌코센테크 Method for improving graphite's surface property using chemical vapor response

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JP4879159B2 (en) * 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド CVD process for amorphous carbon film deposition
FR2935636B1 (en) * 2008-09-05 2011-06-24 Commissariat Energie Atomique MATERIAL WITH MULTILAYER ARCHITECTURE, DEDICATED TO CONTACT WITH LIQUID SILICON
KR101543358B1 (en) * 2013-11-19 2015-08-11 (주)제너코트 Method for improving property of graphite surface

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KR100760336B1 (en) * 2006-06-22 2007-09-20 (주)글로벌코센테크 Method for improving graphite's surface property using chemical vapor response

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