KR101687371B1 - Patterning method of liquid metal using micro cantilever probe - Google Patents

Patterning method of liquid metal using micro cantilever probe Download PDF

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Publication number
KR101687371B1
KR101687371B1 KR1020150113876A KR20150113876A KR101687371B1 KR 101687371 B1 KR101687371 B1 KR 101687371B1 KR 1020150113876 A KR1020150113876 A KR 1020150113876A KR 20150113876 A KR20150113876 A KR 20150113876A KR 101687371 B1 KR101687371 B1 KR 101687371B1
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KR
South Korea
Prior art keywords
liquid metal
substrate
metal pattern
target
probe
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KR1020150113876A
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Korean (ko)
Inventor
최범규
김석범
이정철
최정근
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서강대학교산학협력단
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Publication of KR101687371B1 publication Critical patent/KR101687371B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828—Etching

Abstract

The present invention relates to a liquid metal pattern formation method using a micro cantilever probe. The pattern formation method forms a liquid metal pattern by moving a cantilever probe including indium for a substrate including gallium during pressurization, and performs a method of transferring the corresponding liquid metal pattern to a target from the substrate, thereby forming a nanosized liquid metal pattern.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of forming a liquid metal pattern using a microcantilever probe,

The present invention relates to a method of forming a metal pattern, and more particularly to a method of forming a liquid metal pattern on a target such as a microelectronic device.

Liquid metal is generally referred to as a metal which is relatively high in melting point and held in a liquid state at room temperature. In recent years, studies have been actively conducted on the formation of nano-sized fine patterns in micro semiconductor devices such as antennas for wireless communication, diodes and memristors for logic circuits, and display for strain, force, or pressure measurement using such liquid metal.

On the other hand, liquid metals such as eutectic gallium-indium alloy (eGain), gallium-indium-tin alloy, and Indalloy under the trade name of Galistan have high electrical conductivity, Toxic material that can be used as a substitute for a semiconductor device.

In particular, the eutectic gallium-indium alloy has a melting point of less than 15 ° C., so that it maintains a liquid state at room temperature, and when exposed to the atmosphere, forms an oxide film and thus has high wettability with respect to a surface of a nonmetallic material. The eutectic gallium-indium alloy can form a stable independent structure while maintaining its shape by the surface oxide film.

Conventionally, various methods for forming a fine pattern made of a liquid metal have been attempted based on such properties of the eutectic gallium-indium alloy by spraying an atomic level droplet, directly printing through a nozzle, or drawing using a ball pen However, there is a limitation in implementing a pattern width of nano size, and there is a problem that a fine line width is not short-circuited or is not produced smoothly.

It is an object of the present invention to provide a method for reliably forming a nano-sized liquid metal pattern without short circuit.

The gist of the present invention regarding the recognition of the above-mentioned problems and the solution means based on the above is as follows.

(1) the liquid metal pattern is transferred from the substrate to the target after the liquid metal pattern is formed while moving the cantilever probe under pressure against the substrate, wherein the cantilever probe and the substrate are provided with the liquid metal And at least one of the constituent alloy components is contained.

(2) The liquid metal pattern forming method according to (1), wherein the liquid metal is a eutectic gallium-indium alloy.

(3) The method for forming a liquid metal pattern according to (2), wherein the cantilever probe is formed of indium or deposited with indium.

(4) The method for forming a liquid metal pattern according to (2), wherein the liquid metal is composed of 25 wt% of indium and 75 wt% of gallium.

(5) The method of forming a liquid metal pattern according to (1), wherein the process of forming the liquid metal is performed in a state where the probe or the substrate is heated.

(6) A method for forming a liquid metal pattern according to (1), wherein a pretreatment of plasma treatment or a technique coating is performed on the surface of the substrate.

(7) The method for forming a liquid metal pattern according to (1), wherein the transfer process is performed in a state in which the opposing surfaces of the substrate and the target are parallel to each other.

(8) The method for forming a liquid metal pattern according to (1), wherein the target is any one of an electrode substrate, a strain gauge, a flexible electronic device or a micro-heater.

The method of forming a liquid metal pattern according to the present invention can reliably form a liquid metal pattern without a short circuit by conventionally forming a liquid metal in advance and then transferring it to a target.

Further, in the process of previously forming the liquid metal, the line width of the liquid metal pattern can be precisely controlled by controlling the radius of curvature of the cantilever probe. In this case, even if the radius of curvature of the cantilever probe is set to the nano- Size can be precisely controlled.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process conceptual diagram of a method of forming a liquid metal pattern according to an embodiment of the present invention; FIG.
2 is a structural view of a cantilever probe according to an embodiment of the present invention;
3 is a cross-sectional structural view of a liquid metal pattern formed on a substrate according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Throughout the specification, when an element is referred to as including, it is understood that it can include other elements, not excluding other elements, unless the context clearly indicates otherwise. In addition, when an element is referred to as being 'provided', is included or included, it is not necessarily a component adopted in connection with the solution of the present invention, but it is arbitrarily or advantageously adopted . In the drawings, some of the inventive features are exaggerated or omitted from the drawings as needed for convenience of description.

FIG. 1 shows a process conceptual diagram of a method of forming a liquid metal pattern (hereinafter abbreviated as 'pattern forming method') according to an embodiment of the present invention, and FIG. 2 shows a structure of a cantilever probe according to an embodiment of the present invention .

1, the pattern forming method includes aligning the cantilever probe 10 at a predetermined position on the substrate 20, moving the cantilever probe 10 downward on the substrate 20 to press the predetermined pattern To form a liquid metal pattern 30, and then transferring the liquid metal pattern 30 to the target 40. In this case, for convenience, the liquid metal pattern 30 formed on or transferred to the target 40 may be formed on the substrate 20 without considering the shape of the actual pattern to distinguish it from the substrate 20 or the target 40 Respectively.

The cantilever probe 10 and the substrate 20 include at least one alloy component for forming a liquid metal. That is, by the frictional contact between the cantilever probe 10 and the substrate 20, the specific alloy components contained in the respective components react with each other, and a liquid metal containing the specific alloy component as an effective component can be formed.

For example, when the liquid metal to be formed is a eutectic gallium-indium alloy, indium is contained in the cantilever probe 10 and gallium is contained in the substrate 20, The liquid metal pattern 30 corresponding to the path of travel of the probe 10 on the substrate 20 is formed by the frictional contact of the probe 10 with the content of eutectic gallium-indium liquid metal being typically 25 wt% indium and gallium 75 %.

The cantilever probe 10 or the substrate 20 itself may be constituted by the alloy component itself constituting the liquid metal with respect to the mode of incorporating the alloy component into the cantilever probe 10 or the substrate 20 And an alloy component may be partially coated on the surface of the cantilever probe 10 or the substrate 20 by a method such as vapor deposition.

If the cantilever probe 10 or the substrate 20 itself is made of an alloy component, the service life of the probe 10 or the substrate 20 is prolonged, but the cost may increase or the fabrication may be difficult. On the contrary, the configuration for depositing the alloy component only on the surface of the probe 10 or the substrate 20 can be easily manufactured at a low cost, but has a short life span. In the embodiment, indium is deposited on the surface of the cantilever probe 10, and the substrate 20 is made of gallium.

On the other hand, the present invention focuses attention on a phenomenon that a specific solid-phase alloy component is changed into a liquid state by eutectic heat or pressure, and controlling the phenomenon to a nano-size, thereby forming a fine liquid metal pattern 30. In this case, the line width of the generated liquid metal pattern 30 basically depends on the area in which the probe 10 contacts the substrate 20, and therefore control thereof is important. The contact area of the probe 10 with respect to the substrate 20 is influenced by the radius of curvature R of the tip of the probe 10. The present invention is based on the fact that the radius of curvature of the tip of the cantilever probe 10 The line width of the liquid metal pattern 30 can be controlled by a simple operation of controlling the line width of the liquid metal pattern 30. That is, the smaller the radius of curvature of the probe 10, the finer the pattern can be made, and the larger the radius of curvature, the larger the line width of the pattern.

The cantilever probe 10 is designed to enable fine movement in xy and z directions when the surface of the substrate 20 is in the xy plane by an external driving element (not shown). For example, the cantilever probe 10 may be a cantilever probe provided in a scanning probe microscope (SPM).

In the process of forming the liquid metal, it is sufficient that the temperature due to the friction is 15.7 DEG C or higher. To the extent that the liquid metal forming condition is satisfied, the pressure condition applied to the substrate 20 by the cantilever probe 10, The moving speed of the moving body 10 can be determined. However, in order for the liquid metal to be uniformly formed along the path of the probe 10, the rate and amount of reaction of the alloy component of the cantilever probe 10 and the substrate 20 must be uniform, It is preferable that the moving speed is also kept uniform.

On the other hand, in a working environment in which the ambient temperature is excessively low due to inadequate formation of the liquid metal, the pressing condition of the probe 10 with respect to the substrate 20 during formation of the liquid metal by simple friction becomes excessive, (20) itself may be damaged. Damage to the probe 10 or the substrate 20 during the liquid metal forming process may have a problem that the line width of the liquid metal pattern 30 becomes uneven. In this case, if necessary, the liquid metal forming process is performed in a state where the probe 10 or the substrate 20 is heated to a temperature near the temperature required for liquid metal formation by using external heating means (not shown) The problem accompanying the excessive pressing condition between the substrate 10 and the substrate 20 can be effectively solved.

3 is a cross-sectional structural view of a liquid metal pattern formed on a substrate according to an embodiment of the present invention. 3, a solid-phase gallium oxide (GaO) film 32 is formed on the surface of the liquid metal formed by the frictional contact between the probe and the substrate at the moment of contact with air, (EGaIn) 34, which is contained in the liquid phase eutectic gallium-indium alloy (EGaIn) 34, is fixed.

That is, liquid metal is formed as the probe 10 moves to a friction state under a predetermined pressure condition with respect to the substrate 20 under a predetermined pressurizing condition, and the solid-phase coating 32 is exposed to the surface of the liquid metal Immediately formed, the internal liquid eutectic germanium-indium alloy 34 can be firmly held on the substrate 20 in the form of a fine pattern. In this case, in the preset fine line width control, it is important to control the moving speed of the probe 10 in consideration of the formation speed of the coating 32.

Subsequently, the liquid metal pattern 30 formed on the substrate 20 with the cross-sectional shape of Fig. 3 is transferred to the target 40 of interest.

The liquid metal pattern 30 is held on the substrate 20 by holding the target surface of the target 40 in which the pattern is desired to be transferred to the substrate 20 including the liquid metal pattern 30 for a predetermined time, To the target 40.

In this case, as the adhesion of the liquid metal pattern 30 to the substrate 30 is lower than that of the target 40, the transfer can be facilitated. Even when the entirety of the liquid metal pattern 30 is not transferred to the target 40 due to the difference in the adhesive force, even if the transfer ratio is 70 to 80%, the liquid metal pattern 30 of the desired line- May be transferred to the target 40. Further, since the transfer process is performed by contacting the protruding shape of the liquid metal pattern 30 to the target 40, the liquid metal pattern 30 ) May be advantageous in terms of miniaturization.

The material of the target 40 is not particularly limited and may be suitably selected according to the material of the substrate 20 and the constituents of the liquid metal to the extent that the transfer itself due to the difference in adhesion is difficult or insignificant. For example, the target 40 may be made of PDMS (Polydimethylsioxane), EcoFlex, PET, paper, or the like having good adhesion to liquid metal when the substrate 20 of gallium is to be prepared. In this case, kapton, Teflon, etc. are inadequate for use because of too low adhesion to liquid metal.

The problem that the liquid metal pattern 30 is not sufficiently transferred to form the fine pattern due to the difference in the excessive adhesive force to each of the substrate 20 and the target 40 is that the surface of the substrate 20 is subjected to oxygen plasma treatment or Teflon coating The adhesion of the liquid metal pattern 30 to the substrate 20 may be lowered by a pretreatment process such as treatment.

The transfer process is performed in a state in which the opposing surfaces of the substrate 20 and the target 40 are parallel to each other so that the liquid metal pattern 30 having a uniform line width with respect to the target 40 can be transferred, Do.

The product according to the target may be an electrode substrate, a strain gage, a flexible electronic device, a micro heater or the like.

As described above, the liquid metal pattern forming method according to the present invention can form the liquid metal pattern more reliably without short circuit than before by forming the liquid metal in advance and transferring it to the target. Further, in the process of previously forming the liquid metal, the line width of the liquid metal pattern can be precisely controlled by controlling the radius of curvature of the cantilever probe. In this case, even if the radius of curvature of the cantilever probe is set to the nano- Size can be precisely controlled.

While the foregoing is directed to a specific embodiment of the present invention, it is to be understood that the above-described embodiment of the present invention has been disclosed for the purpose of illustration and is not to be construed as limiting the scope of the present invention, It should be understood that various changes and modifications may be made to the disclosed embodiments without departing from the spirit of the invention.

For example, in the above embodiment, the liquid metal formed by the frictional reaction between the cantilever probe 10 and the substrate 20 comprises a cantilever-indium alloy, the cantilever probe 10 includes an indium material, The material of the probe 10 and the substrate 20 may be reversed. Further, depending on the type of the liquid metal to be formed, the alloy elements included in the probe 10 and the substrate 20 may be different.

In addition, the principle of formation of the liquid metal in the above embodiments can be applied to the case where the composition of the liquid metal or the composition ratio is different.

It is also possible to carry out the problem of the transfer process due to the difference in adhesion of the liquid metal to the substrate and each of the targets through a predetermined surface treatment for the target as opposed to the proposed embodiment.

It is therefore to be understood that all such modifications and alterations are intended to fall within the scope of the invention as disclosed in the following claims or their equivalents.

10: cantilever probe
20: substrate
30: Liquid metal pattern
32: oxide film
34: liquid metal
40: Target

Claims (8)

The liquid metal pattern is transferred from the substrate to the target after the liquid metal pattern is formed while moving the cantilever probe under pressure with respect to the substrate, wherein the cantilever probe and the substrate are provided with an alloy Wherein the liquid metal is a eutectic gallium-indium alloy, and the liquid metal pattern has a surface coated with an oxide film and an inner surface in a liquid state to maintain the shape.
delete The method of claim 1, wherein the cantilever probe is formed of indium or deposited with indium.
The method of claim 1, wherein the liquid metal comprises 25 wt% indium and 75 wt% gallium.
The method of claim 1, wherein the process of forming the liquid metal is performed while the probe or the substrate is heated.
2. The method of claim 1, wherein a pretreatment of the plasma treatment or the tecron coating is performed on the surface of the substrate.
The method of claim 1, wherein the step of transferring from the substrate to the target is performed in a state in which the opposing surfaces of the substrate and the target are parallel to each other.
The method of claim 1, wherein the target is one of an electrode substrate, a strain gauge, a flexible electronic device, or a micro-heater.
KR1020150113876A 2015-08-12 2015-08-12 Patterning method of liquid metal using micro cantilever probe KR101687371B1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110491598A (en) * 2019-07-09 2019-11-22 深圳大学 A kind of liquid metal structure and its instantaneously pattern packaging method
US10900848B2 (en) 2018-11-02 2021-01-26 United States Of America As Represented By The Secretary Of The Air Force Articles comprising a resistor comprising core shell liquid metal encapsulates and method of detecting an impact
US11100223B2 (en) 2018-11-02 2021-08-24 United States Of America As Represented By The Secretary Of The Air Force Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same
US11102883B2 (en) 2018-11-02 2021-08-24 United States Of America As Represented By The Secretary Of The Air Force Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands
US11406956B2 (en) 2018-11-02 2022-08-09 United States Of America As Represented By The Secretary Of The Air Force Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
논문1* *
논문2* *
논문3* *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10900848B2 (en) 2018-11-02 2021-01-26 United States Of America As Represented By The Secretary Of The Air Force Articles comprising a resistor comprising core shell liquid metal encapsulates and method of detecting an impact
US11100223B2 (en) 2018-11-02 2021-08-24 United States Of America As Represented By The Secretary Of The Air Force Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same
US11102883B2 (en) 2018-11-02 2021-08-24 United States Of America As Represented By The Secretary Of The Air Force Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands
US11406956B2 (en) 2018-11-02 2022-08-09 United States Of America As Represented By The Secretary Of The Air Force Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power
US11691117B2 (en) 2018-11-02 2023-07-04 United States Of America As Represented By The Secretary Of The Air Force Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power
US11734422B2 (en) 2018-11-02 2023-08-22 United States Of America As Represented By The Secretary Of The Air Force Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same
US11856690B2 (en) 2018-11-02 2023-12-26 United States Of America As Represented By The Secretary Of The Air Force Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands
CN110491598A (en) * 2019-07-09 2019-11-22 深圳大学 A kind of liquid metal structure and its instantaneously pattern packaging method

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