KR101686123B1 - Micro heater and Micro sensor - Google Patents

Micro heater and Micro sensor Download PDF

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Publication number
KR101686123B1
KR101686123B1 KR1020150092688A KR20150092688A KR101686123B1 KR 101686123 B1 KR101686123 B1 KR 101686123B1 KR 1020150092688 A KR1020150092688 A KR 1020150092688A KR 20150092688 A KR20150092688 A KR 20150092688A KR 101686123 B1 KR101686123 B1 KR 101686123B1
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KR
South Korea
Prior art keywords
electrode
heater
sensor
substrate
sensor electrode
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KR1020150092688A
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Korean (ko)
Inventor
안범모
박승호
변성현
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(주)포인트엔지니어링
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Priority to KR1020150092688A priority Critical patent/KR101686123B1/en
Priority to US15/181,976 priority patent/US20160370336A1/en
Priority to EP17194842.5A priority patent/EP3287776A1/en
Priority to EP16174642.5A priority patent/EP3115775A3/en
Priority to EP17194843.3A priority patent/EP3287777B1/en
Priority to CN201610428627.6A priority patent/CN106257961A/en
Application granted granted Critical
Publication of KR101686123B1 publication Critical patent/KR101686123B1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/145—Carbon only, e.g. carbon black, graphite
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/4067—Means for heating or controlling the temperature of the solid electrolyte
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4073—Composition or fabrication of the solid electrolyte
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/03—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/16—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0207—Bolometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro-heater and a micro-sensor, and more particularly, to a micro-heater and a micro-sensor which are formed with a protective layer on a heater electrode to prevent the heater electrode from being oxidized and protect the heater electrode.

Description

[0001] Micro heater and Micro sensor [0002]

The present invention relates to a micro-heater and a micro-sensor, and more particularly to a micro-heater and a micro-sensor in which a protective layer is formed on a heater electrode.

Recently, as the interest in the environment has increased, it is required to develop a small sensor capable of obtaining accurate and various information in a short time. Especially, for the miniaturization, high precision and low price of micro sensor such as gas sensor to easily measure the concentration of the related gas for the improvement of the residential space, coping with harmful industrial environment, food and food production process management Efforts have been underway.

Currently, gas sensors are evolving into micro gas sensors in the form of micro electro mechanical systems (MEMS) by the application of semiconductor processing technology in the conventional ceramic sintering or thick film structure.

In terms of measurement methods, the most widely used method in current gas sensors is to measure the change in the electrical characteristics of a gas sensor when it is adsorbed to the sensor material. A metal oxide such as SnO 2 is used as a sensing material and a change in electric conductivity according to the concentration of a gas to be measured is measured to provide a relatively simple measurement method. At this time, the change of the measured value is more remarkable when the metal oxide sensing material is heated and operated at a high temperature. Accurate temperature control is therefore essential for fast and accurate measurement of gas concentrations. Also, at the time of measurement, the gas species or water adsorbed on the sensing material are forcibly removed by heating at high temperature, and the sensing substance is reset (restored) to the initial state and the gas concentration is measured. Therefore, temperature characteristics in gas sensors directly affect the main measurement parameters such as sensor sensitivity, recovery time, and reaction time.

Therefore, in order to efficiently heat the micro heater, it is effective to locally uniformly heat only the sensing material. However, if the power consumption for controlling the temperature of the microgas sensor is large, it requires a large battery or power source, even though the volume of the sensor and the measuring circuit is small, which ultimately determines the size of the entire measuring system. Therefore, in order to implement a micro gas sensor, a structure requiring low power consumption should be considered first.

In order to reduce the heat loss, etch pits or grooves are formed in the sensor structure by the bulk micromachining process since most of the micro gas sensors are manufactured using a silicon substrate having a very high thermal conductivity. And a micro heater, an insulating film, and a sensing material are sequentially formed on the structure to form a suspended structure separated from the substrate, thereby partially reducing heat loss. However, in this case, since it is a manufacturing method based on the wet etching using the crystal orientation of the substrate itself, there is a restriction on the miniaturization of the sensor element, and the physical properties of the etchant such as KOH (potassium hydroxide) used are difficult to be compatible with the standard CMOS semiconductor process .

1 is a perspective view of a humidity sensor which is one of conventional micro sensors.

The humidity sensor 10 includes a substrate 11 and an electrode 15 formed on the aluminum oxide porous layer 13 and an aluminum oxide oxide (AAO) layer 13 formed on the substrate 11 do.

The substrate 11 is made of aluminum and is formed in a substantially rectangular plate shape.

The aluminum oxide porous layer 13 is formed by oxidizing the substrate 11. When aluminum is oxidized, an aluminum oxide porous layer 13 having a plurality of holes 13a formed on its surface can be formed. A barrier layer is formed between the aluminum oxide porous layer 13 and aluminum.

At this time, the diameter of the hole 13a is formed to be 60 nm or less. When the diameter of the hole 13a is 60 nm or less, the hole 13a can be prevented from being damaged by the etching solution.

The electrode 15 is made of a metal such as platinum, aluminum, or copper, and may be formed by various methods such as a vapor deposition method.

The electrode 15 includes a first electrode 16 and a second electrode 17 disposed adjacent to the first electrode 16. The first electrode 16 includes a first electrode 16 and a second electrode 17, The electrode protrusion 16a is formed and the electrode protrusion 17a protruding toward the first electrode 16 is formed on the second electrode 17. [

However, when such a microsensor is provided, there is a problem that heat insulation is lost and heat loss occurs.

Further, there is a problem that the electrode is oxidized or damaged.

Korean Patent Publication No. 2009-0064693 Korean Patent Registration No. 1019576

SUMMARY OF THE INVENTION It is an object of the present invention to provide a micro heater and a micro sensor that can prevent the heater electrode from being oxidized and protect the heater electrode.

According to an aspect of the present invention, there is provided a micro heater including a substrate and a heater electrode formed on the substrate, wherein a protective layer is formed on the heater electrode.

The heater electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C, and the protective layer includes tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, indium oxide And tin oxide may be formed.

The heater electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu, and C, and an intermediate layer is disposed between the substrate and the heater electrode. The intermediate layer includes tantalum oxide and titanium Oxide, silicon oxide, aluminum oxide, ITO, indium oxide and tin oxide.

The substrate may be formed with a plurality of pores penetrating in the vertical direction.

The substrate may be formed by removing aluminum and a barrier layer after anodizing aluminum, and the heater electrode may be formed on the surface of the substrate where the aluminum and the barrier layer are removed.

And a plurality of air gaps may be formed discontinuously in an area except for a portion supporting the heater electrode, the air gap being formed by removing all of the area from the top surface to the bottom surface of the substrate.

The protective layer may be formed on only a portion of the heater electrode, and the heater electrode may be formed with an unprotected portion on which the protective layer is not formed.

The heater electrode includes a heater wire and a heater electrode pad connected to the heater wire, and the unprotected portion may be formed on a part of the heater electrode pad.

The protective layer may be formed on the upper and side portions of the heater electrode, and the protective layer may be formed on the substrate.

According to an aspect of the present invention, there is provided a microsensor comprising a substrate, a sensor electrode formed on the substrate, and a heater electrode formed on the substrate, wherein at least one of the heater electrode and the sensor electrode And a protective layer is formed on the upper portion.

The heater electrode or the sensor electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C, and the protective layer is made of tantalum oxide, titanium oxide, silicon oxide, ITO and at least one of indium oxide and tin oxide.

The heater electrode or the sensor electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C, and an intermediate layer is disposed between the substrate and the heater electrode or the sensor electrode , The intermediate layer may be formed of at least one of tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, ITO, indium oxide and tin oxide.

The substrate is formed with a plurality of pores passing through the substrate in an up and down direction. The substrate is formed by removing aluminum and a barrier layer after anodizing aluminum, and the heater electrode is formed on the surface of the substrate, As shown in FIG.

An air gap formed by removing the entire area from the upper surface to the lower surface of the substrate is provided in a region excluding the portion supporting the heater electrode and the sensor electrode at all times, and a plurality of air gaps may be discontinuously formed.

The protective layer may be formed only on the heater electrode or a portion of the sensor electrode, and the heater electrode or the sensor electrode may be formed with an unprotected portion without the protective layer.

The sensor electrode includes a sensor wiring and a sensor electrode pad connected to the sensor wiring. The heater electrode includes a heater wiring disposed closer to the sensor wiring than the sensor electrode pad, and a heater electrode pad connected to the heater wiring. And a sensing material covering the sensor wiring, wherein the unprotected portion may be formed on a portion of the sensor electrode covered with the sensing material or a portion of the sensor electrode pad or the heater electrode pad.

The protective layer may be formed on the heater electrode or the sensor electrode, and the protective layer may be formed on the substrate.

According to an aspect of the present invention, there is provided a microsensor comprising: a porous layer substrate having a plurality of pores formed in a vertical direction; a sensor electrode pad formed on the porous layer substrate and connected to the sensor wiring; A heater electrode formed on the porous layer substrate and including a heater wire arranged closer to the sensor wire than the sensor electrode pad and a heater electrode pad connected to the heater wire; Wherein the sensor electrode and the heater electrode are formed of platinum, and the heater electrode or the sensor electrode is formed of a material selected from the group consisting of a heater electrode and a sensor electrode, And at least one tantalum oxide is formed on the upper portion.

According to an aspect of the present invention, there is provided a microsensor comprising: a substrate; a first sensor electrode formed on the substrate, the first sensor electrode including a first sensor wiring and a first sensor electrode pad connected to the first sensor wiring; A second sensor electrode formed on the substrate and spaced apart from the first sensor electrode and including a second sensor wiring and a second sensor electrode pad connected to the second sensor wiring, A heater electrode including heater wires formed by surrounding at least a part of the first and second sensor electrodes from outside thereof and heater electrodes including first and second heater electrode pads connected to both ends of the heater wire, Wherein the sensor electrode and the heater electrode are made of platinum, and the sensor electrode and the heater electrode are formed of platinum, and the sensor electrode, the heater electrode, And the tantalum oxide is formed on at least one of the heater electrode and the sensor electrode.

According to the micro-heater and micro-sensor of the present invention as described above, the following effects can be obtained.

A protective layer is formed on the heater electrode to prevent the heater electrode from being oxidized and to protect the heater electrode.

The heater electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C, and the protective layer includes tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, indium oxide And tin oxide, so that the protection and oxidation of the heater electrode can be more effectively performed.

An intermediate layer is disposed between the substrate and the heater electrode, so that the adhesive force of the heater electrode can be improved.

A plurality of pores are formed in the substrate so as to penetrate the substrate in a vertical direction, thereby improving the heat insulating property and increasing the temperature to a high temperature by using low power. In addition, the electrode portion can be stably supported by the porous layer to maintain mechanical durability. In addition, during the heat treatment process, damage to the electrode due to organic matter remaining in the pores is prevented. In addition, it can be optimized for miniaturized devices such as mobile devices.

The substrate is provided with an aluminum oxide porous layer, so that the porous layer can be easily formed.

The heater electrode is formed on the surface of the substrate on which the aluminum and the barrier layer are removed so that the heater electrode is formed on the surface from which the aluminum and the barrier layer are removed, .

An unprotected portion in which the protective layer is not formed is formed, and an unprotected portion is formed in a sensor wiring portion covered by the sensing material, so that sensor detection can be accurately performed.

In addition, the unprotected portion may be formed on a part of the heater electrode pad and the sensor electrode pad, so that soldering can be smoothly performed.

The protective layer is formed on the upper and side portions of the heater electrode, and the protective layer is also formed on the substrate to more effectively protect the heater electrode, and the substrate can also be protected.

1 is a perspective view showing a conventional humidity sensor.
2 is an exploded perspective view of a conventional aluminum oxide porous layer.
3 is a plan view of a microsensor equipped with a micro heater according to a preferred embodiment of the present invention (a state in which a sensing material and a protective layer are omitted)
4 is a cross-sectional view taken along line AA of FIG. 3. (a state in which a protective layer is provided)
5 is an enlarged view of a portion B in Fig.
6 is a cross-sectional view of a micro-sensor having a micro-heater according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

For reference, the same components as those of the conventional art will be described with reference to the above-described prior art, and a detailed description thereof will be omitted.

3 to 5, the microsensor equipped with the micro-heater according to the present embodiment includes a substrate 100, a sensor electrode 300 formed on the substrate 100, And a protective layer 600 is formed on at least one of the heater electrode 200 and the sensor electrode 300.

The substrate 100 is formed of an aluminum material and is formed into a rectangular plate shape.

The substrate 100 is formed of a porous layer. That is, the substrate 100 is formed of a porous material. Accordingly, the substrate 100 is formed with a plurality of pores 102 having upper and lower openings penetrating in the vertical direction.

The diameter and length of the pores 102 shown in the figure are shown somewhat largely for convenience of explanation.

The substrate 100 can be formed by anodizing aluminum plate. Accordingly, the porous layer substrate is an aluminum oxide (AAO) layer. The aluminum and the barrier layer are removed from the oxidized aluminum substrate 100 and the pores 102 of the substrate 100 are vertically penetrated.

The sensor electrode 300 is formed on the upper surface of the substrate 100 in which the aluminum and the barrier layer are removed.

The sensor electrode 300 senses gas.

As described above, the sensor electrode 300 may sense humidity or the like.

The sensor electrode 300 includes a first sensor electrode 300a and a second sensor electrode 300b spaced apart from the first sensor electrode 300a. The first sensor electrode 300a and the second sensor electrode 300b are spaced apart from each other in the left-right direction and are formed symmetrically with respect to a center line disposed vertically on the plane.

The first sensor electrode 300a includes a first sensor wiring and a first sensor electrode pad connected to the first sensor wiring.

The second sensor electrode 300b includes a second sensor wiring and a second sensor electrode pad connected to the second sensor wiring.

The sensor wiring 310 includes the first sensor wiring and the second sensor wiring.

The sensor electrode pad 320 includes the first sensor electrode pad and the second sensor electrode pad.

The sensor electrode 300 is formed of a mixture containing one or at least one of Pt, W, Co, Ni, Au, Cu, and the like.

The sensor wiring 310 is disposed at the center of the substrate 100.

The sensor wiring 310 is formed in a linear shape having a constant width.

The sensor electrode pad 320 is formed to have a larger width than the sensor wiring 310. In addition, the sensor electrode pad 320 has a larger area when viewed from the plane than the sensor wiring 310.

The sensor electrode pads 320 of the first and second sensor electrodes 300a and 300b are disposed at two adjacent corners of the rectangular substrate 100 and are formed to have a wider width toward the free end. That is, the sensor electrode pad 320 is formed to be narrower toward the sensor wiring 310.

The heater electrode 200 is formed on the upper surface of the substrate 100 in which the aluminum and the barrier layer are removed. The heater electrode 200 and the sensor electrode 300 may be formed on the surface of the substrate 100 opposite to the surface on which the aluminum and the barrier layer are removed.

The heater electrode 200 and the pores 102 disposed below the sensor electrode 300 are blocked by the heater electrode 200 and the sensor electrode 300 and open at the bottom, At least one of the pores 102 disposed at the part (around the heater electrode 200 and the sensor electrode 300) other than the electrode 300 is open at the top and the bottom.

In this way, the heater electrode 200 is formed on the porous layer, and the pore 102 increases the heat insulating effect.

The heater electrode 200 is formed of a mixture containing one or at least one of Pt, W, Co, Ni, Au, Cu, and the like.

The heater electrode 200 includes a heater wire 210 disposed closer to the sensor wire 310 than the sensor electrode pad 320 and a heater electrode pad 220 connected to the heater wire 210.

The heater wiring 210 is disposed at the central portion of the substrate 100. The heater wire 210 includes a first bend portion 211 and a second bend portion 213 spaced from the first bend portion 211 and a connection bend portion 213 connecting the first bend portion 211 and the second bend portion 213 212). The first bend section 211 and the second bend section 213 are formed to be curved in a '?' Shape when viewed from a plane. The connection bend section 212 is formed to be bent in a 'U' shape when viewed in a plan view. Therefore, a spacing space 214 is formed between the first bent portion 211 and the second bent portion 213. The sensor wiring 310 is disposed in the spacing space 214. That is, the heater wire 210 is formed by surrounding at least a part of the first and second sensor electrodes 300a and 300b from the outside. This allows the sensing material 400 described below to be effectively heated.

The heater electrode pad 220 includes first and second heater electrode pads 220a and 220b connected to both ends of the heater wire 210, respectively. As described above, the heater electrode pads 220 are formed of at least two or more.

The heater electrode pad 220 is disposed at two adjacent two corners of the substrate 100, and is formed so as to have a wider width toward the outside. That is, the heater electrode pad 220 is formed to have a narrower width toward the heater wiring 210.

The heater electrode pad 220 is formed to have a larger width than the heater wiring 210. In addition, the heater electrode pad 220 has a larger area when viewed from the plane than the heater wiring 210.

A protective layer 600 is formed on the entire upper surface of the heater electrode 200 and the sensor electrode 300.

The protective layer 600 is formed of at least one of tantalum oxide (TaOx), titanium oxide (TiO2), silicon oxide (SiO2), aluminum oxide (Al2O3), ITO, indium oxide (In2O3), and tin oxide (SnO2).

The protective layer 600 prevents the heater electrode 200 and the sensor electrode 300 from being oxidized and protects the heater electrode 200 and the sensor electrode 300.

Further, an intermediate layer 700 is disposed between the upper surface of the substrate 100 and the lower surface of the heater electrode 200 and the sensor electrode 300. The adhesion between the heater electrode 200 and the sensor electrode 300 is improved by the intermediate layer 700.

The intermediate layer 700 is formed of at least one of tantalum oxide (TaOx), titanium oxide (TiO2), silicon oxide (SiO2), aluminum oxide (Al2O3), ITO, indium oxide (In2O3), and tin oxide (SnO2).

A solder metal is formed on the ends of the heater electrode pad 220 and the sensor electrode pad 320.

A soldering metal is formed on the protective layer 600.

The soldering metal may be at least one of gold, silver, and tin.

The air gap 101 is formed in the substrate 100 so as to surround the heater wiring 210 and the sensor wiring 310. The air gap 101 is disposed around the heater wiring 210 and the sensor wiring 310.

The maximum width (width of the air) of the air gap 101 is formed to be wider than the maximum width of the pores 102. [

The air gap 101 is formed in an arc shape, and three air gaps 101 are formed. A plurality of air gaps (101) are arranged circumferentially spaced apart. That is, a plurality of air gaps 101 are discontinuously formed.

The air gap 101 is formed between the sensor electrode pad 320 of the first sensor electrode 300a and the first heater electrode pad 220a and between the first heater electrode pad 220a and the second heater electrode pad 220a, And between the second heater electrode pad 220b and the sensor electrode pad 320 of the second sensor electrode 300b. That is, the air gap 101 is formed in a region excluding the portion supporting the heater electrode 200 and the sensor electrode 300.

The air gap 101 is formed to penetrate in the vertical direction. That is, the air gap 101 is formed by removing all of the upper surface to the lower surface of the substrate 100. As described above, the air gap may be formed in a groove shape.

The substrate 100 is provided with the first supporting portion 110 and the heater electrode pad 220 and the sensor electrode pad 320 which commonly support the heater wiring 210 and the sensor wiring 310, The second supporting portion 120 is formed. That is, an air gap 101 is formed between the first supporting part 110 and the second supporting part 120. As the width of the air gap 101 is widened, the exothermic peak temperature becomes higher.

The first supporting portion 110 is formed in a circular shape similar to the heater wiring 210 and the sensor wiring 310 so that the first supporting portion 110 and the second supporting portion 120 are connected to each other And the other portions are spaced apart from each other due to the air gap 101. Accordingly, the first support portion 110 and the second support portion 120 are connected at three points.

The first support portion 110 is formed in a circular shape and is surrounded by an air gap 101.

The first supporting portion 110 is formed to be wider than the area of the heater wiring 210 and the sensor wiring 310.

The air gap 101 is formed to surround the first support portion 110.

Air is disposed in the air gap 101, the heat insulating effect is improved, the thermal conductivity is reduced, and the heat capacity can be reduced.

Further, a sensing material 400 covering the heater wiring 210 and the sensor wiring 310 is formed on the first supporting part 110.

That is, the sensing material 400 is formed at a position corresponding to the first supporting portion 110.

The sensing material 400 is formed by printing. After the sensing material 400 is formed by printing, a mesh network type mark is left on the surface of the sensing material 400 after the sensing material 400 is formed.

Hereinafter, the operation of the present embodiment having the above-described configuration will be described.

In order to measure the gas concentration, a constant power is first applied to the two heater electrode pads 220 of the heater electrode 200, and the sensing material 400 in the central portion of the sensor is heated to a predetermined temperature.

The change in the characteristic of the sensing material 400 that occurs when the gas existing around the sensing material 400 is adsorbed or desorbed in the sensing material 400 corresponds to the concentration of the sensing material 400, And measuring the electric potential difference between the sensor electrode pads 320 connected to the sensor electrode pad 320 to measure the electric conductivity of the sensing material 400.

Further, in order to measure more precisely, other gas species or moisture that have already been adsorbed to the sensing material 400 are heated at a high temperature by the heater electrode 200 to forcibly remove the sensing material 400 to restore the sensing material 400 to an initial state, Is measured.

In describing a microsensor according to another embodiment of the present invention, the same or similar components as those of the microsensor according to the above-described embodiment are denoted by the same reference numerals, and detailed description and illustration thereof will be omitted.

6, in the micro-sensor having the micro-heater according to another embodiment of the present invention, the protective layer 600 'is formed only on the heater electrode or a part of the sensor electrode, An unprotected portion 221 in which the protective layer is not formed is formed on the sensor electrode.

The protective layer 600 'is not formed in the portion covered by the sensing material 400 in the sensor wiring 310 of the sensor electrode. Accordingly, the upper surface and the side surface of the sensor wiring 310 directly contact the sensing material 400, and transmission can be smoothly performed.

Also, the protective layer 600 'is not formed on the heater electrode pad 220 of the heater electrode and a part of the sensor electrode pad of the sensor electrode.

Accordingly, the protective layer 600 'may be formed by a heater wiring 210, a portion of the heater electrode pad 220, a connection portion between the heater electrode pad 220 and the heater wiring 210, And is formed at a connection portion between the sensor electrode pad and the sensor wiring 310.

That is, the unprotected portion 221 is formed on the portion of the sensor electrode covered by the sensing material 400 and a portion of the sensor electrode pad and the heater electrode pad 220.

In detail, the protective layer 600 'is not formed on the sensor electrode pad and the heater electrode pad 220 near the respective corners of the substrate 100, so that soldering can be smoothly performed on the exposed portions.

Further, the protective layer 600 'is formed so as to cover the upper and side portions of the heater electrode and the sensor electrode.

In addition, the protective layer 600 'is also formed on the substrate 100.

A protective layer 600 'is formed on the first supporting portion 110, which is a portion of the substrate 100 that covers the sensing material 400. However, the protective layer 600 'may not be formed on the substrate 100 around the sensor wiring 310.

A protective layer 600 'is formed on the second support portion 120 that supports the sensor electrode pad and the heater electrode pad 220 on the substrate 100. A portion of the substrate 100 where the protective layer 600 'is formed is blocked by the protective layer 600'.

The protective layer 600 'is not formed on the substrate 100 where the air gap 101 is formed.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims .

DESCRIPTION OF REFERENCE NUMERALS
100: substrate
200: heater electrode 210: heater wiring
300: sensor electrode 310: sensor wiring

Claims (25)

Board;
And a heater electrode formed on the substrate,
A protective layer is formed on the heater electrode,
Wherein an air gap formed by removing all of the upper surface to the lower surface of the substrate in a region excluding the portion supporting the heater electrode is provided to improve the heat insulating property. The method according to claim 1,
The heater electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C,
Wherein the protective layer is formed of at least one of tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, ITO, indium oxide, and tin oxide. 3. The method according to claim 1 or 2,
The heater electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C,
An intermediate layer is disposed between the substrate and the heater electrode,
Wherein the intermediate layer is formed of at least one of tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, ITO, indium oxide and tin oxide. 3. The method according to claim 1 or 2,
Wherein a plurality of pores are formed through the substrate in a vertical direction. 5. The method of claim 4,
Wherein the substrate is formed by removing aluminum and a barrier layer after anodizing aluminum, and the heater electrode is formed on the surface of the substrate where the aluminum and the barrier layer are removed. delete The method according to claim 1,
Wherein a plurality of the air gaps are discontinuously formed. 3. The method according to claim 1 or 2,
Wherein the protective layer is formed only on a part of the heater electrode,
Wherein the heater electrode is formed with an unprotected portion on which the protective layer is not formed. 9. The method of claim 8,
Wherein the heater electrode includes a heater wire and a heater electrode pad connected to the heater wire,
And the unprotected portion is formed on a part of the heater electrode pad. 3. The method according to claim 1 or 2,
Wherein the protective layer is formed on upper and side portions of the heater electrode. 3. The method according to claim 1 or 2,
Wherein the protective layer is also formed on the substrate. Board;
A sensor electrode formed on the substrate;
And a heater electrode formed on the substrate,
A protective layer is formed on at least one of the heater electrode and the sensor electrode,
Wherein an air gap is formed in the region excluding the portion supporting the heater electrode and the sensor electrode at all from the upper surface to the lower surface of the substrate, thereby improving the heat insulation. 13. The method of claim 12,
The heater electrode or the sensor electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C,
Wherein the protective layer is formed of at least one of tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, ITO, indium oxide, and tin oxide. The method according to claim 12 or 13,
The heater electrode or the sensor electrode is formed of a mixture containing Pt, W, Co, Ni, Au, Cu and / or C,
An intermediate layer is disposed between the substrate and the heater electrode or the sensor electrode,
Wherein the intermediate layer is formed of at least one of tantalum oxide, titanium oxide, silicon oxide, aluminum oxide, ITO, indium oxide and tin oxide. The method according to claim 12 or 13,
Wherein a plurality of pores are formed through the substrate in a vertical direction. 16. The method of claim 15,
Wherein the substrate is formed by anodizing aluminum and removing aluminum and a barrier layer, and the heater electrode is formed on a surface of the substrate where the aluminum and the barrier layer are removed. delete 13. The method of claim 12,
Wherein a plurality of the air gaps are discontinuously formed. The method according to claim 12 or 13,
Wherein the protective layer is formed only on a portion of the heater electrode or the sensor electrode,
Wherein the heater electrode or the sensor electrode is formed with an unprotected portion in which the protective layer is not formed. 20. The method of claim 19,
Wherein the sensor electrode includes a sensor wiring and a sensor electrode pad connected to the sensor wiring,
And a sensing material covering the sensor wiring,
And the unprotected portion is formed in a portion covered by the sensing material at the sensor electrode. 20. The method of claim 19,
Wherein the sensor electrode includes a sensor wiring and a sensor electrode pad connected to the sensor wiring,
Wherein the heater electrode includes a heater wiring disposed closer to the sensor wiring than the sensor electrode pad and a heater electrode pad connected to the heater wiring,
And the unprotected portion is formed on a part of the sensor electrode pad or the heater electrode pad. The method according to claim 12 or 13,
Wherein the protective layer is formed on the heater electrode or on the upper and side portions of the sensor electrode. The method according to claim 12 or 13,
Wherein the protective layer is also formed on the substrate. A porous layer substrate in which a plurality of pores are formed in a vertical direction;
A sensor electrode formed on the porous layer substrate and including a sensor wiring and a sensor electrode pad connected to the sensor wiring;
A heater electrode formed on the porous layer substrate and including a heater wire arranged closer to the sensor wire than the sensor electrode pad and a heater electrode pad connected to the heater wire; And
And the air gap formed by removing all the portions from the upper surface to the lower surface of the porous layer substrate in an area excluding the portion supporting the sensor electrode and the heater electrode,
Wherein the sensor electrode and the heater electrode are made of platinum, and at least one of the heater electrode and the sensor electrode is formed with a tantalum oxide. Board;
A first sensor electrode formed on the substrate, the first sensor electrode including a first sensor wiring and a first sensor electrode pad connected to the first sensor wiring;
A second sensor electrode formed on the substrate and spaced apart from the first sensor electrode, the second sensor electrode including a second sensor electrode and a second sensor electrode pad connected to the second sensor wiring;
A heater wiring formed on the substrate, the heater wiring being formed by surrounding at least a part of the first and second sensor electrodes from the outside, and first and second heater electrode pads connected to both ends of the heater wiring, Heater electrodes;
And a plurality of air gaps formed in a region between the first sensor electrode, the second sensor electrode, and the heater electrode from the upper surface to the lower surface of the substrate to be discontinuously formed,
Wherein the sensor electrode and the heater electrode are made of platinum, and at least one of the heater electrode and the sensor electrode is formed with a tantalum oxide.
KR1020150092688A 2015-06-18 2015-06-30 Micro heater and Micro sensor KR101686123B1 (en)

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KR1020150092688A KR101686123B1 (en) 2015-06-30 2015-06-30 Micro heater and Micro sensor
US15/181,976 US20160370336A1 (en) 2015-06-18 2016-06-14 Micro Heater and Micro Sensor
EP17194842.5A EP3287776A1 (en) 2015-06-18 2016-06-15 Micro heater and micro sensor
EP16174642.5A EP3115775A3 (en) 2015-06-18 2016-06-15 Micro heater and micro sensor
EP17194843.3A EP3287777B1 (en) 2015-06-18 2016-06-15 Micro sensor
CN201610428627.6A CN106257961A (en) 2015-06-18 2016-06-16 Micro-heater and microsensor

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190009088A (en) * 2017-07-18 2019-01-28 (주)포인트엔지니어링 Vacuum sensor
KR20190009535A (en) * 2017-07-19 2019-01-29 (주)포인트엔지니어링 Sensor for process atmosphere
US20220117044A1 (en) * 2019-06-27 2022-04-14 Rohm Co., Ltd. Microheater, gas sensor, and method for manufacturing microheater
US20220120708A1 (en) * 2020-10-15 2022-04-21 Rohm Co., Ltd. Sensor and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090061865A (en) * 2007-12-12 2009-06-17 한국전자통신연구원 Semiconductor gas sensor device and method for fabricating the same
KR20090064693A (en) 2007-12-17 2009-06-22 한국전자통신연구원 Micro gas sensor and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090061865A (en) * 2007-12-12 2009-06-17 한국전자통신연구원 Semiconductor gas sensor device and method for fabricating the same
KR20090064693A (en) 2007-12-17 2009-06-22 한국전자통신연구원 Micro gas sensor and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190009088A (en) * 2017-07-18 2019-01-28 (주)포인트엔지니어링 Vacuum sensor
KR102329965B1 (en) * 2017-07-18 2021-11-23 (주)포인트엔지니어링 Vacuum sensor
KR20190009535A (en) * 2017-07-19 2019-01-29 (주)포인트엔지니어링 Sensor for process atmosphere
KR102393780B1 (en) 2017-07-19 2022-05-03 (주)포인트엔지니어링 Sensor for process atmosphere
US20220117044A1 (en) * 2019-06-27 2022-04-14 Rohm Co., Ltd. Microheater, gas sensor, and method for manufacturing microheater
US20220120708A1 (en) * 2020-10-15 2022-04-21 Rohm Co., Ltd. Sensor and manufacturing method thereof

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