KR101678938B1 - Photoelectrical device based on transition metal phosphorus sulfides materials - Google Patents
Photoelectrical device based on transition metal phosphorus sulfides materials Download PDFInfo
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- KR101678938B1 KR101678938B1 KR1020160003001A KR20160003001A KR101678938B1 KR 101678938 B1 KR101678938 B1 KR 101678938B1 KR 1020160003001 A KR1020160003001 A KR 1020160003001A KR 20160003001 A KR20160003001 A KR 20160003001A KR 101678938 B1 KR101678938 B1 KR 101678938B1
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 19
- -1 transition metal phosphorus sulfides Chemical class 0.000 title abstract description 6
- 239000000463 material Substances 0.000 title description 11
- 150000003624 transition metals Chemical class 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 125000000101 thioether group Chemical group 0.000 claims 1
- VKCLPVFDVVKEKU-UHFFFAOYSA-N S=[P] Chemical class S=[P] VKCLPVFDVVKEKU-UHFFFAOYSA-N 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 26
- 238000005259 measurement Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
본 발명은 층상구조를 갖는 전이 금속이 결합된 황화인(transition metal phosphorus sulfides, MPSx; M=전이금속, 0<x≤10)을 이용한 광전소자에 관한 것이다.
The present invention relates to a photoelectric device using transition metal phosphorus sulfides (MPSx; M = transition metal, 0 < x < = 10) having a layered structure.
2차원 물질은 다양한 전기적 특성과 잠재적인 응용 가능성으로 인하여 새로운 물질로서 활발히 연구되고 있다. 이러한 물질로는 그래핀이 가장 많은 주목을 받고 있으며, 이외에도 절연물질인 질화붕소(boron nitride; BN)와 반도체인 MoS2와 WSe2 등이 전계효과 트랜지스터(FETs)의 게이트 절연물질과 채널 물질로서 관심을 받고 있다.Two-dimensional materials are being actively studied as new materials due to their various electrical properties and their potential applicability. Graphene has attracted the greatest attention as such materials, and boron nitride (BN), which is an insulating material, and MoS 2 and WSe 2 , which are semiconductors, are used as gate insulating materials and channel materials of field effect transistors I am interested.
MoS2와 WSe2와 같은 2차원 물질들은 박리법을 이용하여 두께제어가 용이하고 두께에 따라서 직접 밴드갭(direct band gap)을 가짐으로써 FET 소자뿐만 아니라 광전소자로써 많은 연구가 이루어지고 있다. 또한 이러한 2차원 물질을 이용함으로써 유연하고 투명한 광전소자로 응용이 가능하다.Two-dimensional materials such as MoS 2 and WSe 2 have been studied as a photoelectric device as well as an FET device because of easy thickness control using a stripping method and a direct band gap depending on the thickness. Moreover, by using such two-dimensional material, it is possible to apply it as a flexible and transparent photoelectric device.
최근 O. Lopenz-Sanchez 등에 의해 2013년7월에 nature nanotechnology, Vol. 8에서는 MoS2 단일층을 이용한 고감도의 광검출 소자를 발표하였다.Recently, in O. Lopenz-Sanchez et al., In July 2013, Nature Nanotechnology, Vol. 8 presented a high-sensitivity photodetector using MoS 2 monolayer.
도 1의 (a)(b)는 상기 광검출 소자의 단면 구성을 보여주는 도면으로서, 광검출 소자는 축퇴 도핑된 기판(10)에 일정 두께로 성장된 절연층(20)을 포함하며, 절연층(20) 상부에는 단일층의 MoS2를 전도성의 채널층(40)으로 형성하고 채널층(40)에는 서로 이격되게 소스 전극(51)과 드레인 전극(52)이 형성된다.1 (a) and 1 (b) show a cross-sectional structure of the photodetecting device, in which the photodetecting device comprises an
축퇴 도핑된 기판(10)은 (백)게이트 전극으로 기능하여 일정한 게이트 전압(Vg)이 인가되며, 소스 전극(51)과 드레인 전극(52) 사이에도 일정한 전압(Vds)이 인가된다.The degenerately doped
이와 같이 구성된 광검출 소자는 채널층(40)에 MoS2 단일층의 밴드갭 에너지(∼1.8 eV) 이상의 에너지를 갖는 파장(<680㎚)의 광(light)을 조사하게 되면 여기된 전자에 의한 광전류가 발생되어 소스 전극(51)과 드레인 전극(52) 사이의 전류 흐름이 변화하게 된다.When a light having a wavelength (< 680 nm) having an energy of band gap energy (~ 1.8 eV) of MoS 2 single layer is irradiated to the
소스 전극과 드레인 전극 사이의 전류는 조사 광의 파장과 출력에 의해 달라지며, 이러한 특성들을 이용하여 다양한 광전소자로 응용이 가능하다.
The current between the source electrode and the drain electrode depends on the wavelength and output of the irradiation light, and can be applied to various photoelectric devices by using these characteristics.
본 발명은 층상구조를 갖는 전이 금속이 결합된 황화인(transition metal phosphorus sulfides, MPSx; M=전이금속, 0<x≤10)을 이용하여 대략 530 nm 이하의 파장에서 높은 온/오프 특성과 빠른 반응속도를 구현할 수 있는 광전소자를 제공하고자 한다.
The present invention relates to a method for manufacturing a semiconductor device having a high on / off characteristic at a wavelength of approximately 530 nm or less using a transition metal phosphorus sulfide (MPSx; M = transition metal, 0 < And to provide a photoelectric device capable of realizing a reaction rate.
이러한 목적을 달성하기 위한 광전소자는, 게이트 절연층 상에 마련되어 조사 광원의 파장에 따라서 광전류가 발생되는 채널층과, 서로 이격되게 형성되어 상기 채널층에 전압을 인가하기 위한 복수의 전극과, 상기 게이트 절연층에 전계를 형성하도록 마련된 게이트 전극;을 포함하는 광전소자에 있어서, 상기 채널층은 층상구조를 갖는 전이금속이 결합된 황화인(MPSx, M=전이금속, 0<x≤10)인 것을 특징으로 한다.The photoelectric device for achieving this object includes a channel layer provided on the gate insulating layer and generating a photocurrent according to the wavelength of the irradiation light source, a plurality of electrodes formed to be spaced apart from each other and adapted to apply a voltage to the channel layer, (MPSx, M = transition metal, 0 < x < / = 10) bonded with a transition metal having a layered structure, and a gate electrode formed to form an electric field in the gate insulating layer .
바람직하게는, 상기 채널층은 CrPS4인 것을 특징으로 하며, 보다 바람직하게는, 상기 채널층의 광전류는 상기 조사 광원의 파장이 532nm 이하에서 증가하는 것을 특징으로 한다.Preferably, the channel layer is CrPS 4 , and more preferably, the photocurrent of the channel layer is increased at a wavelength of the irradiation light source of 532 nm or less.
바람직하게는, 상기 복수의 전극은 상기 채널층을 기준으로 수평 방향으로 형성됨을 특징으로 한다.
Preferably, the plurality of electrodes are formed in a horizontal direction with respect to the channel layer.
본 발명에 따른 광전소자는, 층상구조를 갖는 전이금속이 결합된 황화인(MPSx, M=전이금속, 0<x≤10)을 채널층 물질로 사용하여 532nm 이하의 파장에서 높은 온/오프 특성과 빠른 응답속도를 보여주며, 2차원 소재기반의 고성능, 고감도 광전소자로 활용될 수 있다.
The photoelectric device according to the present invention has a high ON / OFF characteristic at a wavelength of 532 nm or less by using a sulphide (MPSx, M = transition metal, 0 < x & And it can be used as a high-performance, high-sensitivity photoelectric device based on a two-dimensional material.
도 1의 (a)(b)는 종래기술의 광전소자의 단면 구성을 보여주는 도면,
도 2의 (a)(b)(c)(d)는 화학 기상 증착법을 이용하여 CrPS4의 제작과정을 간략히 보여주는 도면,
도 3은 화학 기상 증착법에서 노 내의 설정 온도 조건을 보여주는 그래프,
도 4는 화학 기상 증착법에 의해 제작된 CrPS4의 SEM-EDX 측정결과를 보여주는 데이터,
도 5의 (a)(b)는 각각 박리법으로 제작된 CrPS4 광전소자의 구조 및 광학적 이미지,
도 6의 (a)(b)는 각각 제작된 CrPS4 광전소자의 레이저 파장에 따른 광전류 측정 결과를 보여주는 데이터,
도 7의 (a)(b)(c)와 (d)(e)(f)는 각각 수직방향 구조와 수평방향 구조의 광전소자에 대해 특정 파장(532nm)의 다른 에너지(250㎼,500㎼,750㎼)를 갖는 레이저를 조사하여 광전류 매핑(mapping)을 통한 광전류 측정결과를 보여주는 데이터.1 (a) and 1 (b) illustrate cross-sectional configurations of a conventional photoelectric device,
2 (a), 2 (b), 2 (c) and 2 (d) schematically show the production process of CrPS 4 using chemical vapor deposition,
3 is a graph showing set temperature conditions in a furnace in the chemical vapor deposition method,
4 shows data showing the results of SEM-EDX measurement of CrPS 4 produced by the chemical vapor deposition method,
5 (a) and 5 (b) show the structure and optical image of the CrPS4 photoelectric device fabricated by the peeling method,
6 (a) and 6 (b) are data showing photocurrent measurement results according to the laser wavelength of each of the manufactured CrPS4 photoelectric elements,
7 (a), 7 (b), 7 (c) and 7 (d) , 750 ㎼), which shows photocurrent measurement results through photocurrent mapping.
본 발명의 실시예에서 제시되는 특정한 구조 내지 기능적 설명들은 단지 본 발명의 개념에 따른 실시예를 설명하기 위한 목적으로 예시된 것으로, 본 발명의 개념에 따른 실시예들은 다양한 형태로 실시될 수 있다. 또한 본 명세서에 설명된 실시예들에 한정되는 것으로 해석되어서는 아니 되며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경물, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.The specific structure or functional description presented in the embodiment of the present invention is merely illustrative for the purpose of illustrating an embodiment according to the concept of the present invention, and embodiments according to the concept of the present invention can be implemented in various forms. And should not be construed as limited to the embodiments described herein, but should be understood to include all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
또한 본 발명에 따른 실시예의 설명에 있어서, 각 구성요소의 '상(위) 또는 하(아래)'에 형성되는 것으로 기재되는 경우에 있어, 상(위) 또는 하(아래)는 두개의 구성요소가 서로 직접 접촉되거나 하나 이상의 다른 구성요소가 위 두 구성요소 사이에 배치되어 형성되는 것을 모두 포함한다.In the description of embodiments according to the present invention, when it is described as being formed on the upper or lower side of each component, the upper (upper) or lower (lower) Or one or more other components are formed by being disposed between the two components.
또한 '상(위) 또는 하(아래)'로 표현되는 경우 하나의 구성요소를 기준으로 위쪽 방향뿐만 아니라 아래쪽 방향의 의미도 포함할 수 있다.Also, when expressed as 'upper or lower', it may include not only an upward direction but also a downward direction based on one component.
도면에서 각층의 두께나 크기는 설명의 편의 및 명확성을 위하여 과장되거나 생략되거나 또는 개략적으로 도시되었다. 또한 각 구성요소의 크기는 실제크기를 전적으로 반영하는 것은 아니다.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
이하, 본 발명의 실시예를 첨부 도면을 참고하여 상세히 설명하면 다음과 같다. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명의 광전소자는, 게이트 절연층 상에 마련된 채널층과, 서로 이격되게 형성되어 상기 채널층에 전압을 인가하기 위한 복수의 전극과, 상기 게이트 절연층에 전계를 형성하도록 마련된 게이트 전극;을 포함하는 광전소자에 있어서, 상기 채널층은 층상구조를 갖는 전이금속이 결합된 황화인(MPSx, M=전이금속, 0<x≤10)인 것을 특징으로 한다.A photoelectric device of the present invention comprises a channel layer provided on a gate insulating layer, a plurality of electrodes formed so as to be spaced apart from each other to apply a voltage to the channel layer, and a gate electrode provided to form an electric field in the gate insulating layer (MPSx, M = transition metal, 0 < x &le; 10) bonded with a transition metal having a layered structure in the photoelectric device.
게이트 절연층으로는 Si 및/또는 SiO2의 절연 물질일 수 있으며, 또는 GaAs, ITO를 포함한 반도체 물질이거나 SiNx, Al2O3, HfO2와 같은 절연 물질이 사용될 수 있다.The gate insulating layer may be an insulating material of Si and / or SiO 2 , or a semiconductor material including GaAs, ITO, or an insulating material such as SiNx, Al 2 O 3 , and HfO 2 .
특히, 본 발명에서 체널층은 층상구조를 갖는 전이금속이 결합된 황화인(transition metal phosphorus sulfides) 물질이 사용됨을 특징으로 하며, 예컨대, MPSx로 표현될 수 있고, 여기서, 'M'은 전이금속이며, x는 0 보다 크고 10 이하, 바람직하게는, 2 ~ 6의 값을 갖는다. M은 Cr, Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Fe, Mn, Ni 등의 전이금속을 포함한다.Particularly, in the present invention, the channel layer is characterized by using a transition metal phosphorus sulfide material having a layered structure, for example, MPSx, where 'M' And x has a value of more than 0 and not more than 10, preferably 2 to 6. M includes transition metals such as Cr, Mo, W, Nb, V, Ta, Ti, Zr, Hf, Tc, Re, Fe, Mn and Ni.
MPSx는 기본적으로 육각밀집구조(hexagonally close packed)인 황화층(Sulfur layer)을 갖는 층상 구조이다.
MPSx is a layered structure with a sulfated layer, which is basically hexagonally close packed.
이하, 본 실시예에서는 전이금속으로서 Cr이 결합된 황화인(CrPS4)을 채널층으로 사용하여 광전소자를 제작하고 광원을 조사하여 광전류(photocurrent)를 측정하였으며, 이에 대하여 설명하도록 한다.Hereinafter, in this embodiment, photocurrent is measured by manufacturing a photoelectric device and irradiating a light source using phosphorus (CrPS 4 ) having Cr as a transition metal as a channel layer.
CrPSCrPS 4 4 의 제작Production
도 2의 (a)(b)(c)(d)는 화학 기상 증착법(chemical vapor transport, CVT)을 이용한 CrPS4의 제작과정을 간략히 보여주는 도면이다.2 (a), 2 (b), 2 (c) and 2 (d) are schematic views showing a process of manufacturing CrPS 4 using chemical vapor transport (CVT).
도 2의 (a)를 참고하면, 수분과 산소가 제거된 글러브 박스(50) 내에서 시재료(starting material)(Cr,P,S)를 알맞은 조성비로 혼합하여 석영관(60) 내에 넣고 공기가 통하지 않도록 임시로 막는다.2 (a), starting materials (Cr, P, and S) are mixed in an appropriate composition ratio in a
다음으로, 밀봉된 석영관(60)을 글로브 박스(50)에서 꺼낸 후에, 도 2의 (b)에 도시된 것과 같이, 석영관(60)을 펌핑하여 내부의 공기를 빼내면서 토치를 이용하여 석영관(60)을 완전히 밀봉한다.Next, after the sealed
밀봉된 석영관(60)은, 도 2의 (c)에 도시된 것과 같이, 두 구역으로 나눠진 노(furnace)(70)에 넣고 물질 형성에 알맞은 온도를 조절한다. 참고로, 노(30) 내에 온도 조건은 도 3에 예시된 그래프를 참고하여 이루어질 수 있다.The sealed
다음으로 석영관(60)을 실온까지 식힌 후에, 도 2의 (d)에 도시된 것과 같이, 후드(80) 내에서 석영관(60)을 깨고 벌크 형태의 CrPS4를 수집한다.Next, after the
도 4는 화학 기상 증착법에 의해 제작된 CrPS4의 SEM-EDX 측정결과를 보여주는 데이터로서, 제작된 CrPS4의 임의의 세 영역(빨강, 파랑, 초록)에 대한 조성분석결과, P, S, Cr 원자의 비율이 각각 1:4:1임을 알 수 있으며, 따라서 CVT 방법에 의해 CrPS4 벌크가 성장되었음을 확인할 수 있다.
FIG. 4 is a graph showing the results of SEM-EDX measurement of CrPS 4 produced by the chemical vapor deposition method. As a result of analyzing the composition of CrPS 4 in any three regions (red, blue, green) Atoms are 1: 4: 1, respectively. Therefore, it can be confirmed that the CrPS 4 bulk is grown by the CVT method.
CrPSCrPS 4 4 광전소자의 제작Fabrication of optoelectronic devices
도 5의 (a)(b)는 각각 박리법으로 제작된 CrPS4 광전소자의 구조 및 광학적 이미지이다.5 (a) and 5 (b) show the structure and optical image of the CrPS4 photoelectric device fabricated by the peeling method, respectively.
도 5의 (a)에서와 같이, 본 실시예에서 광전소자는 수직방향 및 수평방향의 구조로 제작되었으며, SiO2 기판위에 준비된 벌크 형태의 CrPS4를 박리법에 의해 박막 형태로 제작하고 전자빔 리소그래피에 의해 하부전극이 제작된 SiO2 기판에 전사한 후에 전자빔 리소그래피에 의해 상부전극을 제작하였으며, 도 5의 (b)는 제작된 CrPS4 광전소자의 광학적 이미지를 보여주고 있다.
As shown in FIG. 5A, in this embodiment, the photoelectric device was fabricated in the vertical and horizontal directions, and CrPS 4 in the form of a bulk prepared on the SiO 2 substrate was formed into a thin film by a peeling method, after the lower electrode is manufactured is transferred to the SiO 2 substrate was fabricated by an upper electrode by an electron beam lithography, (b) of Figure 5 shows the optical image of the four photoelectric element made CrPS.
도 6의 (a)(b)는 각각 제작된 CrPS4 광전소자의 레이저 파장에 따른 광전류 측정 결과를 보여주는 데이터로서, 측정에 사용된 레이저의 파장은 각각 532nm와 650nm이다. (A) of Fig. 6 (b) are each manufactured as the data showing the photocurrent measurement results of the laser wavelength of CrPS 4 photoelectric device, the wavelength of the laser used for the measurement are respectively 532nm and 650nm.
도 6의 (a)에서 확인할 수 있듯이, 파장이 532nm인 레이저를 조사한 경우에 CrPS4 채널층에 흐르는 전류가 0.12V에서 573% 증가함을 알 수 있다. 이는 CrPS4의 밴드갭 에너지인 2.3 eV에 해당하는 파장으로 레이저의 포톤(photon) 에너지가 CrPS4 채널층에 흐르는 전류에 영향을 미치는 것을 알 수 있다.As can be seen from FIG. 6 (a), it can be seen that the current flowing through the CrPS 4 channel layer increases by 573% at 0.12 V when a laser with a wavelength of 532 nm is irradiated. It can be seen that the photon (photon) of the laser energy at a wavelength corresponding to the band gap energy of 2.3 eV CrPS 4 affects the current flowing through the channel layer 4 CrPS.
다음으로 도 6의 (b)는 인가해주는 레이저의 온/오프를 반복하면서 CrPS4 채널층에 흐르는 광전류를 측정한 결과로서, 레이저의 반복되는 온/오프에 따라서 광전류의 변화가 급격히 나타나며, 이는 광신호에 대해 CrPS4 채널층이 빠른 응답속도를 보여줌을 알 수 있다.Next, FIG. 6 (b) shows a result of measuring the photocurrent flowing through the CrPS 4 channel layer while repeatedly turning on / off the laser to be applied, and the change of the photocurrent rapidly appears depending on the repetitive ON / OFF of the laser, The CrPS 4 channel layer shows a fast response speed.
도 7의 (a)(b)(c)와 (d)(e)(f)는 각각 수직방향 구조와 수평방향 구조의 광전소자에 대해 특정 파장(532nm)의 다른 에너지(250㎼,500㎼,750㎼)를 갖는 레이저를 조사하여 광전류 매핑(mapping)을 통한 광전류 측정결과를 보여주는 데이터이다.7 (a), 7 (b), 7 (c) and 7 (d) , 750 ㎼), and shows photocurrent measurement results through photocurrent mapping.
도 7의 결과에서 수평방향 구조(d)(e)(f)에서 광전류가 수직방향 구조(a)(b)(c)와 비교하여 80배 높게 나타남을 알 수 있다.
7, it can be seen that the photocurrent in the horizontal direction structures (d) (e) and (f) is 80 times higher than the vertical direction structures (a), (b) and (c).
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능함은 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명백할 것이다.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the inventions. It will be apparent to those of ordinary skill in the art.
10 : 기판 20 : 절연층
40 : 채널층 51 : 소스 전극
52 : 드레인 전극10: substrate 20: insulating layer
40: channel layer 51: source electrode
52: drain electrode
Claims (4)
상기 채널층은 층상구조를 갖는 전이금속이 결합된 황화인(MPSx, M=전이금속, 0<x≤10)인 것을 특징으로 하는 광전소자.A channel layer formed on the gate insulating layer and generating a photocurrent according to the wavelength of the irradiation light source; a plurality of electrodes spaced apart from each other to apply a voltage to the channel layer; a gate electrode formed to form an electric field in the gate insulating layer; A photoelectric device comprising an electrode,
Wherein the channel layer is a sulfide phosphorus (MPSx, M = transition metal, 0 < x < = 10) bonded with a transition metal having a layered structure.
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| KR20190017515A (en) | 2017-08-11 | 2019-02-20 | 서울대학교산학협력단 | Tunnel junction device using transition metal phosphorus sulfides |
| KR101990050B1 (en) * | 2017-12-14 | 2019-09-30 | 재단법인 한국탄소융합기술원 | Method for controlling the sensitivity of optical device made by transition metal dichalcogenide |
| CN114784125A (en) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | Asymmetric induction room-temperature high-sensitivity photoelectric detector and preparation method thereof |
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| KR101990050B1 (en) * | 2017-12-14 | 2019-09-30 | 재단법인 한국탄소융합기술원 | Method for controlling the sensitivity of optical device made by transition metal dichalcogenide |
| CN114784125A (en) * | 2022-03-25 | 2022-07-22 | 国科大杭州高等研究院 | Asymmetric induction room-temperature high-sensitivity photoelectric detector and preparation method thereof |
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