KR101676186B1 - Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof - Google Patents
Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof Download PDFInfo
- Publication number
- KR101676186B1 KR101676186B1 KR1020150123099A KR20150123099A KR101676186B1 KR 101676186 B1 KR101676186 B1 KR 101676186B1 KR 1020150123099 A KR1020150123099 A KR 1020150123099A KR 20150123099 A KR20150123099 A KR 20150123099A KR 101676186 B1 KR101676186 B1 KR 101676186B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor material
- silicon
- present
- substrate
- sio
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H01L35/34—
Abstract
Description
The present invention relates to a semiconductor material containing Fe 2 SiO 4 -based compound and a method for producing the same.
Known semiconductor compound materials can be realized by a combination of a III-group element and a V-group element in the periodic table of the elements. Typical examples are gallium arsenide (GaAs), which is used as a substrate in high-frequency and optoelectronic technologies. In particular, recently, there has been an interest in these semiconductor compound materials, particularly gallium nitride (GaN), in the field of the production of optoelectronic devices such as blue LEDs (Light Emitting Diodes).
The nitrides of semiconductor compound materials are known as III-N materials. Where "III" refers to at least one elemental periodic table III element selected from aluminum (Al), gallium (Ga), and indium (In) and "N" refers to elemental nitrogen of the V-family. These materials can be fabricated as independent III-N substrates, which are suitable as base substrates for the fabrication of optoelectronic devices and microelectronic devices.
In industrial applications, nitride-based light emitting diodes or laser diodes are generally grown on remote substrates such as Al 2 O 3 (sapphire) or SiC (silicon carbide).
However, the use of a remote substrate may adversely affect crystal quality. This is because the crystal lattices do not match each other well. This may result in a reduction in durability and efficiency of the devices.
On the other hand, magnetite (Fe 3 O 4 ) is one of the three common iron oxides FeO, Fe 2 O 3 and Fe 3 O 4 and is used in many important technical applications. The ferro-magnetic iron oxide nanoparticle dispersions known commercially as "Ferrofluid" include, for example, shaft seals for vacuum vessels, oscillating brakes in a variety of electronic equipment and aeronautical electronics, robotics, It is widely used for position detection
Silicide is a mesophase combined with a quantitative chemical ratio of silicon and transition metal. In a semiconductor process, silicide is widely used to lower the contact resistance of a device.
The Fe 2 SiO 4 -based materials are generally olivine solid-solution materials of Fayalite and have an orthorhombic crystal structure with a lattice constant a = 4.82 Å b = 10.48 Å c = 6.09 A. Other materials of the fayalite structure include Mg 2 SiO 4 and Mn 2 SiO 4 And so on. In the Fe 2 SiO 4 system, it is known that Fe 2 SiO 4 having an olivine structure is changed into a spinel structure at a high temperature of 700 to 1200 ° C. and a high pressure of 40 to 70 kb, And the quality as a semiconductor material is deteriorated.
Therefore, not only the performance is excellent but also the development of a semiconductor material having a polycrystalline spinel structure containing an Fe 2 SiO 4 -based compound is desperately required even in a simple process.
An object of the present invention is to provide a multi-crystalline spinel structure Fe 2 SiO 4 A semiconductor material having a thin film and a method of manufacturing the same.
In order to achieve the above object,
The present invention, in one embodiment,
(Fe), silicon (Si), and oxygen (O)
The iron, silicon and oxygen elements have a molar ratio of 2: 1: 4,
A semiconductor material having a polycrystalline spinel structure having an average thickness of 0.01 to 600 nm is provided.
In addition, the present invention, in one embodiment,
Depositing iron (Fe) on a substrate containing silicon (Si) to form a film of polycrystalline structure,
The deposition is performed at a temperature in the range of 200 to 700 占 폚.
The present invention can easily manufacture a semiconductor material containing an Fe 2 SiO 4 compound having a polycrystalline spinel structure at a relatively low temperature by using molecular beam epitaxy (MBE).
1 is a cross-sectional TEM photograph of Example 1. Fig.
2 and 3 are a cross-sectional and surface SEM photographs of Example 2, respectively.
4 and 5 are a cross-sectional and surface SEM photographs of Example 3, respectively.
6 and 7 are results of energy dispersive spectroscopy (EDS) measurement using HAADF (high-angle annular dark-field imaging) in Example 1. In FIG. 7, A, B and C are Iron, silicon, and oxygen.
8 is a graph showing the X-ray diffraction (XRD) measurement results for Examples 1 to 3;
9 is a graph showing the electrical resistivity according to the temperature of Example 1. Fig.
10 is a graph showing the Seebeck coefficient according to the temperature of Example 1. FIG.
While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail.
It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
In the present invention, the terms "comprising" or "having ", and the like, specify that the presence of a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Hereinafter, the present invention will be described in detail with reference to the drawings, and the same or corresponding components are denoted by the same reference numerals regardless of the reference numerals, and a duplicate description thereof will be omitted.
In the present invention, "weight part" means a content ratio between components.
Hereinafter, the semiconductor material according to the present invention will be described in detail.
As one example, the semiconductor material according to the present invention contains iron (Fe), silicon (Si) and oxygen (O)
The iron, silicon and oxygen elements have a molar ratio of 2: 1: 4,
And a polycrystalline spinel structure having an average thickness of 0.01 to 600 nm.
The semiconductor material according to the present invention may have a structure in which iron and oxygen are deposited in a polycrystalline form on a silicon substrate, wherein the silicon substrate may be in the form of a single crystal or polycrystalline. Specifically, the silicon substrate may be a silicon wafer, for example, one or more of semi-insulating, n-type and p-type silicon wafers.
In one embodiment of the present invention, X-ray diffraction and energy dispersive spectroscopy were measured to confirm the crystal structure and compound composition of the semiconductor material. As a result, the lattice constant was 8.532 Å. It was also confirmed that the content ratio (Mn / Si) of iron (Fe) and silicon (Si) contained in the semiconductor material was about 2: 1. From these results, it can be seen that the semiconductor material contains an Fe 2 SiO 4 -based compound (see Experimental Example 1).
As an example, the average thickness of the semiconductor material according to the present invention may be in the range of 0.01 to 600 nm, 1 to 590 nm, 10 to 570 nm, 20 to 550 nm, 50 to 530 nm, or 60 to 500 nm have. When the average thickness of the semiconductor material is in the above range, the electrical resistivity becomes low as the temperature is increased, thereby improving the physical properties of the semiconductor material (see FIG. 9).
Hereinafter, a method of manufacturing a semiconductor material according to the present invention will be described in detail.
A method of manufacturing a semiconductor material according to the present invention includes:
Depositing iron (Fe) on a substrate containing silicon (Si) to form a film of polycrystalline structure,
The deposition may be performed at a temperature in the range of 200 to 700 占 폚.
In the above-described method of producing a semiconductor material, the film of the polycrystalline structure may have a spinel structure and may contain an Fe 2 SiO 4 -based compound.
Method of producing a semiconductor material according to the invention by depositing the iron (Fe) on the base material containing silicon (Si) by using the method during the molecular beam epitaxy (molecular beam epitaxy, MBE) in a regular molecular beam form Fe 2 A thin film of a polycrystalline structure in which crystals of a compound represented by SiO 4 are uniformly arranged can be formed.
As one example, when iron (Fe) is deposited on a substrate containing silicon (Si) in the method of manufacturing a semiconductor material according to the present invention, the implantation gas may be oxygen. Where oxygen can be atomic oxygen.
The deposition may be performed at a temperature ranging from 200 to 700 ° C, more specifically, at a temperature ranging from 300 to 500 ° C.
In order to carry out the molecular beam epitaxy according to the present invention, the deposition pressure can be controlled to 10 -5 to 10 -10 Torr, specifically 10 -6 to 10 -9 Torr or 8.2 × 10 -6 Can be controlled. In addition, the deposition rate can be determined using a quartz crystal tracer analyzer, specifically 0.05 to 2 Å / s, more specifically 0.1 to 0.5 Å / s.
On the other hand, the method of manufacturing the thermoelectric material may further include a step of surface-treating the substrate containing silicon (Si) before the step of forming the thin film.
At this time, the step of surface-treating the substrate may include any one of the step of washing and the step of heat-treating.
The washing step may be used without any particular limitation as long as it is a method capable of removing the oxide film formed on the substrate surface together with the impurities present on the substrate surface. For example, cleaning can be performed by washing the silicon (Si) wafer with methanol and keeping the washed wafer immersed in dilute fluoric acid for a period of time.
The heat-treating step may be performed after the step of washing the substrate, specifically, the heat-treating temperature may be 200 to 900 ° C or 500 to 700 ° C. In addition, the heat treatment time may be 5 to 60 minutes, 10 to 50 minutes, or 20 to 40 minutes.
When performing the substrate surface treatment step, there is an advantage of facilitating the deposition of iron and oxygen.
The method of manufacturing a semiconductor material according to the present invention includes controlling the pressure, the deposition rate of iron, and the deposition temperature condition for performing the molecular beam epitaxy method stacked on a substrate to the above range, thereby obtaining an Fe 2 SiO 4 based compound A semiconductor material in the form of a thin film having a thickness effective for realizing improved physical properties due to appropriate deposition amount can be effectively produced.
Further, the present invention, in one embodiment,
Fe 2 SiO 4 ,
A semiconductor material having a thin film form of polycrystalline structure in which crystals of the compound are regularly arranged; And
There is provided a semiconductor device further comprising a substrate containing silicon (Si) on one surface of a thermoelectric material in the form of a thin film:
At this time, the semiconductor device may further include a substrate such as a silicon (Si) wafer such as, but not limited to, a substrate containing silicon (Si) on one side of a thin semiconductor material.
Hereinafter, the present invention will be described in more detail with reference to Examples and Experimental Examples.
However, the following Examples and Experimental Examples are merely illustrative of the present invention, and the present invention is not limited to the following Examples and Experimental Examples.
Example One
Semi-insulating silicon (Si) wafers [3, 0], 3 cm in width and 3 cm in length were washed with methanol and immersed in a dilute solution of hydrofluoric acid (HF) The oxide layer on the surface was removed. Thereafter, it was placed in a chamber and preheated to 873K (600 DEG C) for 30 minutes. At this time, the basic pressure of the chamber was 10 -9 Torr. Molecular beam epitaxy (MBE) for evaporating iron (Fe) into a molecular beam evaporation source is performed by using oxygen as an inert gas to form Fe 2 SiO 4 -based compounds on a silicon wafer A thin film semiconductor material was fabricated. At this time, the deposition of iron was performed at a rate of 0.2 Å / s under an oxygen pressure of 8.2 × 10 -6 Torr. As a result, the thickness of the semiconductor material of the thin film structure was about 80 nm, and a cross-sectional TEM image was shown in FIG.
Example 2
Except that an n-type silicon (Si) wafer [1,0,0] was used in place of the semi-insulating silicon (Si) wafer [1,0,0]. The thickness of the semiconductor material of the fabricated thin film structure was about 80 nm, and SEM photographs are shown in FIGS. 2 and 3. 2 is a cross-sectional photograph, and Fig. 3 is a surface photograph.
Example 3
Except that a p-type silicon (Si) wafer [1,0,0] was used instead of a semi-insulating silicon (Si) wafer [1,0,0]. The thickness of the semiconductor material of the fabricated thin film structure was about 86 nm, and SEM photographs are shown in FIGS. 4 and 5. Here, FIG. 4 is a cross-sectional photograph, and FIG. 5 is a surface photograph.
Experimental Example One
The following experiment was conducted to confirm the composition of the compound included in the semiconductor material according to the present invention.
1) Energy dispersive X-ray spectroscopy
The compositions of the thermoelectric materials prepared in Example 1 were analyzed by line scanning of energy dispersive spectroscopy (EDS) using high-angle annular dark-field imaging (HAADF). The results are shown in FIGS. 6 and 7, and in FIG. 7, A, B and C are the analysis results of iron, silicon and oxygen, respectively. As a result, it was confirmed that iron contained 27.194 mol%, silicon 16.859 mol%, and oxygen 55.947 mol%.
Specifically, the content of iron and silicon in the semiconductor material prepared in Example 1 was measured, and it was confirmed that the content ratio (Fe / Si) was about 2: 1. This means that the composition of the compound constituting the semiconductor material is Fe 2 SiO 4 . From these results, it can be seen that the semiconductor material according to the present invention contains an Fe 2 SiO 4 -based compound.
2) X-rays diffraction Measure
X-ray diffraction of the thin films of the semiconductor material prepared in Examples 1 to 3 was measured. At this time, X-ray diffraction was carried out by using D / max-RC (Rigaku Co., Tokyo, Japan, Cu-Kα irradiation, 40 kV, 30 mA) and 1.5406 Å wavelength at a scan rate of 0.02 ° / and a pattern was obtained within a range where ? is in the range of 10 to 90 degrees. The measured results are shown in Fig. 8, where I, II and III are Examples 1 to 3, respectively.
Referring to FIG. 8, the XDR patterns of Examples 1 to 3 were found to have a pattern similar to that of Fe 2 SiO 4 at 2 θ of 30.243, 35.606, 43.232, 57.166 and 62.756. Thus, the semiconductor material according to the present invention is Fe 2 SiO 4 And it has a crystal structure of the composition. The lattice constant of the semiconductor material prepared in Example 1 was 8.352 Å.
Experimental Example 2
In order to evaluate the physical properties of the semiconductor material according to the present invention, the electrical resistivity and the Seebeck coefficient of the semiconductor material prepared in Example 1 were measured.
Specifically, the semiconductor material of Example 1 was cut into a size of 5 mm in width and 5 mm in length, and the electrical resistivity of the cut material was measured in the range of 0 to 420K using the 4-probe method. In addition, the Seebeck coefficient was measured using a method of measuring the thermal electromotive force generated by giving a temperature difference to both ends of the material. FIG. 9 shows the results of the electrical resistivity measurement according to the temperature, and it can be confirmed that the electrical resistivity value decreases as the temperature increases as in a typical semiconductor material. FIG. 10 shows the change in the Seebeck coefficient with temperature. Referring to FIG. 10, the semiconductor material according to the present invention shows excellent physical properties.
Claims (10)
A Fe 2 SiO 4 based compound of a polycrystalline spinel structure deposited on the substrate,
A semiconductor material having an average thickness of 0.01 to 600 nm.
Wherein the deposition is performed at a temperature in the range of 200 to 700 占 폚.
Wherein the deposition is performed by a molecular beam epitaxy method.
Wherein the deposition pressure is 10 < -5 > to 10 < -10 > Torr.
Wherein the deposition rate is 0.05 to 2 ANGSTROM / s.
Prior to the step of forming a film of polycrystalline structure,
Further comprising the step of surface-treating the substrate.
The step of surface-treating the substrate comprises:
Washing; And
And heat-treating the semiconductor material.
Wherein the heat treatment is performed at a temperature of 200 to 900 占 폚.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150123099A KR101676186B1 (en) | 2015-08-31 | 2015-08-31 | Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150123099A KR101676186B1 (en) | 2015-08-31 | 2015-08-31 | Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101676186B1 true KR101676186B1 (en) | 2016-11-14 |
Family
ID=57528642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150123099A KR101676186B1 (en) | 2015-08-31 | 2015-08-31 | Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101676186B1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232264A (en) * | 1996-02-28 | 1997-09-05 | Nec Corp | Method for manufacturing semiconductor device |
| KR20090122347A (en) | 2007-03-02 | 2009-11-27 | 프라이베르게르 컴파운드 마터리얼스 게엠베하 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
| US20130256751A1 (en) * | 2010-12-01 | 2013-10-03 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
| WO2014209834A2 (en) * | 2013-06-24 | 2014-12-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
-
2015
- 2015-08-31 KR KR1020150123099A patent/KR101676186B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232264A (en) * | 1996-02-28 | 1997-09-05 | Nec Corp | Method for manufacturing semiconductor device |
| KR20090122347A (en) | 2007-03-02 | 2009-11-27 | 프라이베르게르 컴파운드 마터리얼스 게엠베하 | Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy |
| US20130256751A1 (en) * | 2010-12-01 | 2013-10-03 | Alliance For Sustainable Energy, Llc | Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates |
| WO2014209834A2 (en) * | 2013-06-24 | 2014-12-31 | Arizona Board Of Regents On Behalf Of Arizona State University | Method to produce pyrite |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5451280B2 (en) | Wurtzite crystal growth substrate, manufacturing method thereof, and semiconductor device | |
| KR101321654B1 (en) | Substrate for growing group-iii nitride semiconductors, epitaxial substrate for group-iii nitride semiconductors, group-iii nitride semiconductor element, stand-alone substrate for group-iii nitride semiconductors, and methods for manufacturing the preceding | |
| US20090291523A1 (en) | Method of Manufacturing High Quality ZnO Monocrystal Film on Silicon(111) Substrate | |
| Park et al. | Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes | |
| Kim et al. | Growth of high-quality GaN on Si (111) substrate by ultrahigh vacuum chemical vapor deposition | |
| WO2005112079A1 (en) | Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite | |
| JP2008540315A (en) | Polarity controlled group III nitride thin film and method for producing the same | |
| JP6152548B2 (en) | Gallium oxide substrate and manufacturing method thereof | |
| Weeks et al. | Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α (6H)–SiC (0001) substrates via organometallic vapor phase epitaxy | |
| Yohannes et al. | Growth of p-type Cu-doped GaN films with magnetron sputtering at and below 400° C | |
| KR20110048795A (en) | Substrate for semiconductor device and method for manufacturing the same | |
| Majid et al. | Effects of Mn ion implantation on XPS spectroscopy of GaN thin films | |
| Thao et al. | Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering | |
| US6906351B2 (en) | Group III-nitride growth on Si substrate using oxynitride interlayer | |
| KR101676186B1 (en) | Semiconductor Material Containing The Fe2SiO4, And Preparation Method Thereof | |
| KR20110099040A (en) | Iii-nitride semiconductor growth substrate, iii-nitride semiconductor epitaxial substrate, iii-nitride semiconductor element, iii-nitride semiconductor freestanding substrate, and method for fabricating these | |
| JP2005203666A (en) | Manufacturing method for compound semiconductor device | |
| Zhao et al. | ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam Epitaxy | |
| JP6934473B2 (en) | Group III nitride semiconductor light emitting device | |
| Van Nostrand et al. | Growth of II-IV-V 2 chalcopyrite nitrides by molecular beam epitaxy | |
| Funk et al. | Magnetic Characterization of a Mn Based Ferromagnet on SixGe (1-xy) Sny with High Sn Content | |
| Kim et al. | Magnetron sputtering growth and characterization of high quality single crystal Ga-doped n-ZnO thin films | |
| US20110117376A1 (en) | Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy | |
| Lin et al. | Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In | |
| WO2024034448A1 (en) | Method for suppressing variation in light emission intensity of background in photoluminescence measurement, and evaluation method for semiconductor substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20191010 Year of fee payment: 4 |