KR101668689B1 - method for forming thin film - Google Patents
method for forming thin film Download PDFInfo
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- KR101668689B1 KR101668689B1 KR1020150052391A KR20150052391A KR101668689B1 KR 101668689 B1 KR101668689 B1 KR 101668689B1 KR 1020150052391 A KR1020150052391 A KR 1020150052391A KR 20150052391 A KR20150052391 A KR 20150052391A KR 101668689 B1 KR101668689 B1 KR 101668689B1
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- South Korea
- Prior art keywords
- substrate
- process chamber
- region
- reaction
- gas
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000010409 thin film Substances 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 156
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 230000006698 induction Effects 0.000 claims abstract description 46
- 239000012495 reaction gas Substances 0.000 claims abstract description 45
- 238000005086 pumping Methods 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 238000007736 thin film deposition technique Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 62
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 230000035484 reaction time Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 239000003507 refrigerant Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- BIVNKSDKIFWKFA-UHFFFAOYSA-N N-propan-2-yl-N-silylpropan-2-amine Chemical compound CC(C)N([SiH3])C(C)C BIVNKSDKIFWKFA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a thin film deposition method. According to an embodiment of the present invention, there is provided a thin film deposition method comprising: positioning substrates on a substrate susceptor rotatably installed in a process chamber and supporting a plurality of substrates; A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure.
Description
The present invention relates to a thin film deposition method.
In general, a thin film deposition method such as a chemical vapor deposition method or an atomic layer deposition method can realize excellent thin film onformability in a semiconductor manufacturing process. The atomic layer deposition method is a method of sequentially exposing reaction products of two or more gases to one substrate. A typical atomic layer deposition facility could form a thin film on one substrate in one chamber. When a plurality of reaction gases are provided in the chamber, control of the film deposition temperature, pressure, gas ratio, and reaction time may become difficult. In addition, the general atomic layer deposition method generates a bad film quality due to a narrow process window or a small amount of production to meet the reaction conditions, and prevents the decomposition of the precursor and the recombination of radicals A loading effect could have occurred.
The present invention is to provide a thin film deposition method capable of preventing a loading effect.
The present invention also provides a thin film deposition method which is performed at a temperature lower than a conventional one.
The present invention also provides a thin film deposition method capable of improving productivity.
According to an aspect of the present invention, there is provided a method of manufacturing a plasma processing chamber, comprising: positioning the substrates rotatably in a process chamber and in a substrate susceptor supporting a plurality of substrates; A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate with vacuum pressure.
The second reaction gas may be a second reaction inducing unit positioned in a third region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three Can be supplied.
Also, the first reaction gas may include silane (SiH4) or titanium chloride (TiCl4).
In addition, the second reaction gas may include a hydroxyl group (OH) or an amine group (NH).
Also, the temperature of the first substrate may be in the range of 350 to 520 degrees in the course of the process.
The first reaction induction unit or the second reaction induction unit may include a top plate having at least one gas injection port, and a plurality of first flow channels for stacking and heating the gas, A middle plate having first through holes through which the gas passing through the first flow path escapes, and a middle plate provided under the middle plate for controlling the pressure and reaction time of the gas introduced through the first through holes. And a bottom plate having secondary flow paths.
Also, at least one middle plate may be installed.
The reaction induction unit may further include an injection nozzle installed on the bottom plate and connected to the secondary flow paths to inject the gas passing through the secondary flow paths onto the substrate.
In addition, the injection nozzle is detachably installed in a slot formed at the center of the bottom plate, and has a plurality of injection holes on the bottom surface and grooves connected to the ends of the secondary flow paths on the side surface.
According to another aspect of the present invention, there is provided a method of manufacturing a plasma processing chamber, comprising: positioning the substrates rotatably in a process chamber and in a substrate susceptor supporting a plurality of substrates; Supplying a first reaction gas to a first substrate among the substrates; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate with vacuum pressure.
According to the embodiment of the present invention, a thin film deposition method capable of preventing the loading effect can be provided.
According to an embodiment of the present invention, a thin film deposition method that is performed at a lower temperature than the conventional one can be provided.
Further, according to the embodiment of the present invention, the productivity of the thin film deposition method can be improved.
1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing an area of the process chamber.
3 is a perspective view of the substrate susceptor shown in Fig.
4 is a perspective view of the reaction induction unit.
5 is an exploded perspective view of the reaction induction unit.
6 is a cross-sectional view of the reaction induction unit.
7 is a plan view showing a spray nozzle installed in the bottom plate.
8 is a view showing a plate on which a refrigerant passage is formed.
9 is a graph showing the degree of formation of the silicon oxide film.
10 is a graph showing the wet etching rate of the silicon oxide film.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The above and other objects, features, and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. Each drawing has been partially or exaggerated for clarity. It should be noted that, in adding reference numerals to the constituent elements of the respective drawings, the same constituent elements are shown to have the same reference numerals as possible even if they are displayed on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
The
Referring to FIG. 1, a
2 is a view showing an area of the process chamber.
The
3 is a perspective view of the substrate susceptor shown in Fig.
Referring to FIGS. 1 and 3, a
The
Although not shown, the
The
4 is a perspective view of the reaction induction unit.
Referring to FIGS. 1 and 4, the
5 is an exploded perspective view of the reaction induction unit.
Referring to Figs. 4 and 5, the
The
The
6 is a cross-sectional view of the reaction induction unit.
Referring to FIG. 6, the
The
Although the
The
The
The
7 is a plan view showing a spray nozzle installed in the bottom plate.
Referring to FIG. 7, the
The reaction gas can be preheated by thermal conduction inside the chamber during the flow of the
8 is a view showing a plate on which a refrigerant passage is formed.
8, according to another embodiment of the present invention, the
Hereinafter, a process of depositing a thin film on a substrate will be described.
The first to
The
The
The reaction induction unit of the
Thereafter, the
And the precursor on the second substrate W2 located in the
The
Thereafter, the
The
The precursor on the third substrate W3, which is located in the
The
According to an embodiment of the present invention, the first to
9 is a graph showing the degree of formation of the silicon oxide film.
In the graph, the abscissa represents the temperature and the ordinate represents the silicon oxide film formation ratio. The silicon oxide film formation state according to the present invention is shown as a first line (L1), and the conventional silicon oxide film formation state is shown as a second line (L2).
Referring to FIG. 9, according to an embodiment of the present invention, the formation of the silicon oxide film starts at about 350 ° C, and the temperature at which the formation of the silicon oxide film is started can be remarkably lowered than in the prior art. For example, the temperature of the substrate during processing may be greater than or equal to 350 ° C and less than or equal to 520 ° C.
Further, the oxide film formation ratio can be remarkably increased under the same temperature condition as compared with the prior art.
10 is a graph showing the wet etching rate of the silicon oxide film.
Referring to FIG. 10, the wet etching rates P2 and P3 of the silicon oxide film formed according to the present invention may be lower than the wet etching rate P1 of a general silicon oxide film. The difference in the wet etching rate can be caused by the density of the silicon oxide film. Typical low density silicon oxide films can have higher wet etch rates than high density silicon oxide films. According to the present invention, both the wet etching rate P3 of the silicon oxide film formed in the temperature range of 400 占 폚 and the wet etching rate P2 of the silicon oxide film formed in the temperature range of 600 占 폚 can be formed at a higher density than in the conventional art.
The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.
300: reaction induction unit 310: top plate
320: Middle plate 330: Bottom plate
350: injection nozzle
Claims (10)
A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
Wherein the first reaction induction unit comprises:
A plurality of primary flow channels formed so as to be stacked below the top plate and adapted for mixing and heating the gases from the center to the edge, A middle plate having first through holes at the ends of the first flow passages so as to pass through the first through holes and a second plate provided below the middle plate for controlling the pressure and the reaction time of the gas introduced through the first through holes, A bottom plate formed so that the flow paths are directed from the edge to the center, and an injection nozzle connected to an end of the secondary flow paths to jet the gas passing through the secondary flow paths onto the substrate.
The second reaction gas is supplied to a second reaction induction unit having a flow path of a multi-layer composite structure, which is located in a third region of the process chamber so as to face the substrate susceptor and is formed by plates laminated with at least three Thin film deposition method.
Wherein the first reaction gas comprises silane (SiH4) or titanium (TiCl4) chloride.
Wherein the second reaction gas comprises a hydroxyl group (OH) or an amine group (NH).
Wherein the temperature of the first substrate is in the range of 350 ° C to 520 ° C.
Supplying a first reaction gas to a first substrate among the substrates;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
The reaction induction unit may include:
A plurality of first through holes for gas mixing and heating and a plurality of first through holes through which gas passing through the first flow path escape, A bottom plate provided to be laminated below the middle plate and having secondary flow paths for controlling the pressure and reaction time of the gas introduced through the first through holes, a bottom plate provided at the center of the bottom plate, And a spray nozzle connected to an end of the secondary flow paths on a side surface and spraying gas passing through the secondary flow paths onto a substrate through a plurality of spray holes formed on the bottom surface.
A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
Wherein the first reaction induction unit comprises:
A plurality of first through holes for gas mixing and heating and a plurality of first through holes through which gas passing through the first flow path escape, A bottom plate provided to be laminated below the middle plate and having secondary flow paths for controlling the pressure and reaction time of the gas introduced through the first through holes, a bottom plate provided at the center of the bottom plate, And a spray nozzle connected to an end of the secondary flow paths on a side surface and spraying gas passing through the secondary flow paths onto a substrate through a plurality of spray holes formed on the bottom surface.
Supplying a first reaction gas to a first substrate among the substrates;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
The reaction induction unit may include:
A plurality of primary flow channels formed so as to be stacked below the top plate and adapted for mixing and heating the gases from the center to the edge, A middle plate having first through holes at the ends of the first flow passages so as to pass through the first through holes and a second plate provided below the middle plate for controlling the pressure and the reaction time of the gas introduced through the first through holes, A bottom plate formed so that the flow paths are directed from the edge to the center, and an injection nozzle connected to an end of the secondary flow paths to jet the gas passing through the secondary flow paths onto the substrate.
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KR1020150052391A KR101668689B1 (en) | 2015-04-14 | 2015-04-14 | method for forming thin film |
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KR1020150052391A KR101668689B1 (en) | 2015-04-14 | 2015-04-14 | method for forming thin film |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090021032A (en) * | 2007-08-24 | 2009-02-27 | 주식회사 케이씨텍 | Injection unit of atomic layer deposition device |
KR20100077889A (en) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
KR20110023289A (en) * | 2009-08-31 | 2011-03-08 | 주식회사 아토 | Gas injecting device and substrate processing apparatus using the same |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090021032A (en) * | 2007-08-24 | 2009-02-27 | 주식회사 케이씨텍 | Injection unit of atomic layer deposition device |
KR20100077889A (en) * | 2008-12-29 | 2010-07-08 | 주식회사 케이씨텍 | Atomic layer deposition apparatus |
KR20110023289A (en) * | 2009-08-31 | 2011-03-08 | 주식회사 아토 | Gas injecting device and substrate processing apparatus using the same |
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