KR101668689B1 - method for forming thin film - Google Patents

method for forming thin film Download PDF

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Publication number
KR101668689B1
KR101668689B1 KR1020150052391A KR20150052391A KR101668689B1 KR 101668689 B1 KR101668689 B1 KR 101668689B1 KR 1020150052391 A KR1020150052391 A KR 1020150052391A KR 20150052391 A KR20150052391 A KR 20150052391A KR 101668689 B1 KR101668689 B1 KR 101668689B1
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South Korea
Prior art keywords
substrate
process chamber
region
reaction
gas
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KR1020150052391A
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Korean (ko)
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신동화
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국제엘렉트릭코리아 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a thin film deposition method. According to an embodiment of the present invention, there is provided a thin film deposition method comprising: positioning substrates on a substrate susceptor rotatably installed in a process chamber and supporting a plurality of substrates; A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure.

Description

[0001] METHOD FOR FORMING THIN FILM [0002]

The present invention relates to a thin film deposition method.

In general, a thin film deposition method such as a chemical vapor deposition method or an atomic layer deposition method can realize excellent thin film onformability in a semiconductor manufacturing process. The atomic layer deposition method is a method of sequentially exposing reaction products of two or more gases to one substrate. A typical atomic layer deposition facility could form a thin film on one substrate in one chamber. When a plurality of reaction gases are provided in the chamber, control of the film deposition temperature, pressure, gas ratio, and reaction time may become difficult. In addition, the general atomic layer deposition method generates a bad film quality due to a narrow process window or a small amount of production to meet the reaction conditions, and prevents the decomposition of the precursor and the recombination of radicals A loading effect could have occurred.

The present invention is to provide a thin film deposition method capable of preventing a loading effect.

The present invention also provides a thin film deposition method which is performed at a temperature lower than a conventional one.

The present invention also provides a thin film deposition method capable of improving productivity.

According to an aspect of the present invention, there is provided a method of manufacturing a plasma processing chamber, comprising: positioning the substrates rotatably in a process chamber and in a substrate susceptor supporting a plurality of substrates; A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate with vacuum pressure.

The second reaction gas may be a second reaction inducing unit positioned in a third region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three Can be supplied.

Also, the first reaction gas may include silane (SiH4) or titanium chloride (TiCl4).

In addition, the second reaction gas may include a hydroxyl group (OH) or an amine group (NH).

Also, the temperature of the first substrate may be in the range of 350 to 520 degrees in the course of the process.

The first reaction induction unit or the second reaction induction unit may include a top plate having at least one gas injection port, and a plurality of first flow channels for stacking and heating the gas, A middle plate having first through holes through which the gas passing through the first flow path escapes, and a middle plate provided under the middle plate for controlling the pressure and reaction time of the gas introduced through the first through holes. And a bottom plate having secondary flow paths.

Also, at least one middle plate may be installed.

The reaction induction unit may further include an injection nozzle installed on the bottom plate and connected to the secondary flow paths to inject the gas passing through the secondary flow paths onto the substrate.

In addition, the injection nozzle is detachably installed in a slot formed at the center of the bottom plate, and has a plurality of injection holes on the bottom surface and grooves connected to the ends of the secondary flow paths on the side surface.

According to another aspect of the present invention, there is provided a method of manufacturing a plasma processing chamber, comprising: positioning the substrates rotatably in a process chamber and in a substrate susceptor supporting a plurality of substrates; Supplying a first reaction gas to a first substrate among the substrates; Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure; Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas; Moving the first substrate to a fourth region of the process chamber and then pumping the substrate with vacuum pressure.

According to the embodiment of the present invention, a thin film deposition method capable of preventing the loading effect can be provided.

According to an embodiment of the present invention, a thin film deposition method that is performed at a lower temperature than the conventional one can be provided.

Further, according to the embodiment of the present invention, the productivity of the thin film deposition method can be improved.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing an area of the process chamber.
3 is a perspective view of the substrate susceptor shown in Fig.
4 is a perspective view of the reaction induction unit.
5 is an exploded perspective view of the reaction induction unit.
6 is a cross-sectional view of the reaction induction unit.
7 is a plan view showing a spray nozzle installed in the bottom plate.
8 is a view showing a plate on which a refrigerant passage is formed.
9 is a graph showing the degree of formation of the silicon oxide film.
10 is a graph showing the wet etching rate of the silicon oxide film.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The above and other objects, features, and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings. Each drawing has been partially or exaggerated for clarity. It should be noted that, in adding reference numerals to the constituent elements of the respective drawings, the same constituent elements are shown to have the same reference numerals as possible even if they are displayed on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

The substrate processing apparatus 10 can perform an atomic layer deposition process on the substrate.

Referring to FIG. 1, a substrate processing apparatus 10 according to an embodiment of the present invention includes a process chamber 100, a substrate susceptor 200 as a substrate support member, reaction induction units (300) and a supply member (400).

2 is a view showing an area of the process chamber.

The process chamber 100 may be divided into two or more regions. For example, the process chamber 100 may be partitioned into first to fourth regions 110, 120, 130, and 140. The process chamber 100 is provided with an entrance 112 on one side. The entrance 112 enters and exits the substrate W during the process. Although not shown, the process chamber 100 may be provided with an exhaust duct for exhausting the reaction gas supplied to the process chamber at the edge thereof and the reaction by-products generated during the deposition process. For example, the exhaust duct may be of a ring type located outside the substrate susceptor 200.

3 is a perspective view of the substrate susceptor shown in Fig.

Referring to FIGS. 1 and 3, a substrate susceptor 200 is installed in the interior space of the process chamber 100. The substrate susceptor 200 may be provided with a heater for heating the substrate during the process. The substrate susceptor 200 may be of a batch type in which four substrates are placed. On top of the substrate susceptor 200, stages 212a, 212b, 212c, and 212d may be formed in which the substrates are placed corresponding to the regions of the process chamber 100. The stages 212a, 212b, 212c, and 212d may be arranged circumferentially. The first to fourth stages 212a to 212d provided on the substrate susceptor may have a circular shape similar to that of the substrate. During the process, the first substrate W1, the second substrate W2, the third substrate W3, and the fourth substrate W4 may be positioned in the first to fourth stages 212a to 212d, respectively.

The substrate susceptor 200 is rotated by a driving unit 290 connected to the rotating shaft 280. The driving unit 290 for rotating the substrate susceptor 200 preferably uses a stepping motor provided with an encoder capable of controlling the number of revolutions and the rotational speed of the driving motor.

Although not shown, the substrate susceptor 200 may be provided with a plurality of lift pins (not shown) for raising and lowering the substrate W in each stage. The lift pins ascend and descend the substrate W, thereby separating the substrate W from the stage of the substrate susceptor 200 or placing the substrate W on the stage.

The supply member 400 may include a first gas supply member 410a and a second gas supply member 410b. The first gas supply member 410a supplies the first reaction gas for forming a predetermined thin film on the substrate w to each of the four reaction induction units and the second gas supply member 410b supplies the second reaction gas Gas is supplied to each of the four reaction induction units. In this embodiment, two gas supply members are used to supply two different reaction gases, but a plurality of gas supply members are applied to supply two or more different gases or the same gas depending on the characteristics of the supplied gas It is possible.

4 is a perspective view of the reaction induction unit.

Referring to FIGS. 1 and 4, the reaction induction unit 300 injects gas into the first region 110 and the third region. The reaction unit 300 positioned in the first region may be referred to as a first reaction induction unit, and the reaction unit 300 positioned in the third region may be referred to as a second reaction unit. The reaction induction unit 300 can receive at least one reaction gas from the supply member. The reaction gas may be preheated from the outside and then supplied to the reaction induction unit 300. According to an example, each of the reaction induction units 300 may be supplied with the first and second reaction gases from the supply member 400. The reaction inducing unit 300 has injection holes 352 formed in its bottom surface. The schematic shape of the reaction induction unit 300 may be fan-shaped.

5 is an exploded perspective view of the reaction induction unit.

Referring to Figs. 4 and 5, the reaction induction unit 300 provides a flow path of a multi-layer composite structure by stacked plates. In this embodiment, a multi-layer composite structure in which three plates are laminated will be described as an example. However, this is merely an example, and the number of plates may be two or four or more.

The reaction induction unit 300 includes a top plate 310, a middle plate 320, a bottom plate 330 and an injection nozzle 350 and includes a top plate 310, a middle plate 320, and a bottom plate 330 Are sequentially stacked and installed.

The top plate 310 has three ports 312, 314. The two ports 312 are a gas injection port for injecting the reactive gas and the other port 314 is a pressure port for checking the pressure inside the reaction induction unit 300.

6 is a cross-sectional view of the reaction induction unit.

Referring to FIG. 6, the middle plate 320 is installed under the top plate 310 in a stacked manner. The middle plate 320 flows through the primary flow paths 322 for mixing and heating the gas and the primary flow path 322 and flows into the secondary flow path 332 of the bottom plate 330 Hole 324 provided to allow the first through hole 324 to pass through.

The primary flow paths 322 include four flow paths from the center square portion 328 of the middle plate 320 toward the edge and a first through hole 324 is formed at the end of each flow path. The primary flow paths 322 may be formed by the partition walls 326. The central square portion 328 is located at the center of the middle plate 320 and is connected to the four primary flow channels into a space through which the gas is introduced through the gas injection port of the top plate 310.

Although the middle plate 320 is shown as being installed between the top plate 310 and the bottom plate 330 in this embodiment, this is merely an example, and the number of the gas to be supplied, In order to control the temperature, two or more plates having different lengths in the form of a flow path may be stacked, and different gases or the same gas may be supplied to the stacked plates.

The bottom plate 330 is installed below the middle plate 320. The bottom plate 330 has four secondary passages 332 for controlling the pressure of the gas and the reaction time of the gas introduced through the four first through holes 324. The pressure and the reaction time can be adjusted while the gas provided from the middle plate 320 passes through the four secondary flow paths 332. For example, when the gas pressure is low, the gas pressure in the secondary flow path can be increased by reducing the volume of the secondary flow path, increasing the number of turns, increasing the length, changing the shape, and the like. On the other hand, when the gas pressure is high, the gas pressure in the secondary flow path can be lowered by increasing the volume of the secondary flow path, decreasing the number of turns, reducing the length, and changing the shape. Thus, the reaction gas whose reaction time and pressure are controlled in the secondary flow path is supplied to the injection nozzle.

The secondary flow paths 332 are formed so as to face the inner region from the edge of the bottom plate 330. One end of the secondary flow path 332 is connected to the through hole 324 of the middle plate 320 and the other end of the secondary flow path 332 is connected to the injection nozzle 350 installed in the inner region of the bottom plate 330.

The secondary flow paths 332 may be provided in a groove shape. The secondary flow path 332 is longer than the primary flow path 322. The secondary flow path 332 may be provided in the form of an independent path having a different length and number of turns.

7 is a plan view showing a spray nozzle installed in the bottom plate.

Referring to FIG. 7, the injection nozzle 350 is installed in the bottom plate 330. The injection nozzle 350 is connected to the four secondary flow paths 332 and injects the gas passing through the secondary flow paths 332 onto the substrate. The injection nozzle 350 is detachably installed in a slot 338 formed in an inner region of the bottom plate 330. The injection nozzle 350 has a plurality of injection holes 352 on the bottom surface and grooves 354 connected to the ends 335 of the secondary flow paths 332 on both sides.

The reaction gas can be preheated by thermal conduction inside the chamber during the flow of the reaction inducing unit 300.

8 is a view showing a plate on which a refrigerant passage is formed.

8, according to another embodiment of the present invention, the plate 380 constituting the reaction induction unit 300 may be formed with the refrigerant passage 384 adjacent to the flow passage 382 through which the reaction gas flows . The refrigerant supplied from the external refrigerant supply device 900 is circulated in the refrigerant passage 384 and the gas flowing in the refrigerant passage can be cooled. The refrigerant passage 384 may be formed on the middle plate 320 or the bottom plate 330 of the reaction induction unit 300 shown in FIG.

Hereinafter, a process of depositing a thin film on a substrate will be described.

The first to fourth regions 110, 120, 130, and 140 may each function as a precursor forming region, a precursor pumping region, a radical forming region, and a radical pumping region. The first substrate W1 and the second substrate W2 are provided in the first stage 212a, the second stage 212b, the third stage 212c and the fourth stage 212d of the substrate susceptor 200, The third substrate W3 and the fourth substrate W4 are positioned. Each of the first stage to the fourth stage 212a to 212d is located in the first region 110, the fourth region 140, the third region 130, and the second region 120.

The reaction induction unit 300 of the first region 110 supplies the first reaction gas to the first substrate W1. The first reaction gas may be provided as a precursor in the deposition process. For example, the first reaction gas may include a silane-based gas, a halogenated silicon-based gas, a halogenated silane-based gas, an aminosilane-based gas, or titanium chloride (TiCl4). Further, the aminosilane-based gas may be diisopropylaminosilane (DIPAS) or trisdimethylaminosilane (TDMAS).

The substrate susceptor 200 is rotated so that the first stage 212a is positioned in the second region 120 and the second stage 212b is positioned in the first region 110. [ The precursor on the first substrate W1 in the second region 120 can be pumped to a set vacuum pressure. In addition, a purge gas may be provided on the first substrate W1 in the second region 120. [

The reaction induction unit of the first region 110 supplies the first reaction gas to the second substrate W2.

Thereafter, the substrate susceptor 200 is rotated so that the first stage 212a is moved to the third region 130, the second stage 212b to the second region 120, and the third stage 212c to the 1 < / RTI > The reaction induction unit of the third region 130 supplies the second reaction gas to the first substrate W1. The second reaction gas may be radically supplied during the deposition process. For example, the second reaction gas may comprise a hydroxyl group (OH) or an amine group (NH). The second reaction gas may react with the material on the first substrate W1 to form an atomic layer. For example, the second reaction gas may react with the precursor on the first substrate W1 to form a thin film of silicon oxide, silicon nitride, or titanium nitride (TiN) on the first substrate W1. Also, hydrochloric acid (HCl) may be generated as a post-reaction gas in such a reaction process.

And the precursor on the second substrate W2 located in the second region 120 can be pumped to a set vacuum pressure. In addition, a purge gas may be provided on the second substrate W2 in the second region 120. [

The reaction induction unit 300 of the first region 110 supplies the first reaction gas to the third substrate W3.

Thereafter, the substrate susceptor 200 is rotated so that the first stage 212a is moved to the fourth region 140, the second stage 212b is moved to the third region 130, and the third stage 212c is moved to the 2 region 120, and the fourth stage 212d is positioned in the first region 110. [ The second reaction gas remaining on the first substrate W1 in the fourth region 140 and the reactive gas may be pumped. Further, a purge gas may be provided on the first substrate W1.

The reaction induction unit 300 of the third region 130 supplies the second reaction gas to the second substrate W2.

The precursor on the third substrate W3, which is located in the second region 120, can then be pumped to the set vacuum pressure. Also, in the second region 120, a purge gas may be provided on the third substrate W3.

The reaction induction unit 300 of the first region 110 supplies the first reaction gas to the fourth substrate W4.

According to an embodiment of the present invention, the first to fourth stages 212a to 212d sequentially move the first to fourth regions 110 to 140 one or more times, So that an atomic layer is deposited on the positioned substrate. Further, after the first stage 212a is first placed in the fourth region 140, it is preferable that, for a certain period of time, for all of the substrates positioned in the first to fourth stages 212a to 212d, A deposition process can be performed. Thus, the process latency of the substrate is minimized, and the loading effect can be eliminated or reduced. In addition, productivity can be improved.

9 is a graph showing the degree of formation of the silicon oxide film.

In the graph, the abscissa represents the temperature and the ordinate represents the silicon oxide film formation ratio. The silicon oxide film formation state according to the present invention is shown as a first line (L1), and the conventional silicon oxide film formation state is shown as a second line (L2).

Referring to FIG. 9, according to an embodiment of the present invention, the formation of the silicon oxide film starts at about 350 ° C, and the temperature at which the formation of the silicon oxide film is started can be remarkably lowered than in the prior art. For example, the temperature of the substrate during processing may be greater than or equal to 350 ° C and less than or equal to 520 ° C.

Further, the oxide film formation ratio can be remarkably increased under the same temperature condition as compared with the prior art.

10 is a graph showing the wet etching rate of the silicon oxide film.

Referring to FIG. 10, the wet etching rates P2 and P3 of the silicon oxide film formed according to the present invention may be lower than the wet etching rate P1 of a general silicon oxide film. The difference in the wet etching rate can be caused by the density of the silicon oxide film. Typical low density silicon oxide films can have higher wet etch rates than high density silicon oxide films. According to the present invention, both the wet etching rate P3 of the silicon oxide film formed in the temperature range of 400 占 폚 and the wet etching rate P2 of the silicon oxide film formed in the temperature range of 600 占 폚 can be formed at a higher density than in the conventional art.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

300: reaction induction unit 310: top plate
320: Middle plate 330: Bottom plate
350: injection nozzle

Claims (10)

Positioning the substrates on a substrate susceptor rotatably mounted in a process chamber and supporting a plurality of substrates;
A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
Wherein the first reaction induction unit comprises:
A plurality of primary flow channels formed so as to be stacked below the top plate and adapted for mixing and heating the gases from the center to the edge, A middle plate having first through holes at the ends of the first flow passages so as to pass through the first through holes and a second plate provided below the middle plate for controlling the pressure and the reaction time of the gas introduced through the first through holes, A bottom plate formed so that the flow paths are directed from the edge to the center, and an injection nozzle connected to an end of the secondary flow paths to jet the gas passing through the secondary flow paths onto the substrate. The method according to claim 1,
The second reaction gas is supplied to a second reaction induction unit having a flow path of a multi-layer composite structure, which is located in a third region of the process chamber so as to face the substrate susceptor and is formed by plates laminated with at least three Thin film deposition method. The method according to claim 1,
Wherein the first reaction gas comprises silane (SiH4) or titanium (TiCl4) chloride. The method according to claim 1,
Wherein the second reaction gas comprises a hydroxyl group (OH) or an amine group (NH). The method according to claim 1,
Wherein the temperature of the first substrate is in the range of 350 ° C to 520 ° C. delete delete Positioning the substrates on a substrate susceptor rotatably mounted in a process chamber and supporting a plurality of substrates;
Supplying a first reaction gas to a first substrate among the substrates;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
The reaction induction unit may include:
A plurality of first through holes for gas mixing and heating and a plurality of first through holes through which gas passing through the first flow path escape, A bottom plate provided to be laminated below the middle plate and having secondary flow paths for controlling the pressure and reaction time of the gas introduced through the first through holes, a bottom plate provided at the center of the bottom plate, And a spray nozzle connected to an end of the secondary flow paths on a side surface and spraying gas passing through the secondary flow paths onto a substrate through a plurality of spray holes formed on the bottom surface. Positioning the substrates on a substrate susceptor rotatably mounted in a process chamber and supporting a plurality of substrates;
A first reaction induction unit disposed on a first substrate of the substrates, the reaction induction unit being located in a first region of the process chamber facing the substrate susceptor and having a flow path of a multilayer composite structure by plates laminated with at least three substrates 1) supplying a reaction gas;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Moving the first substrate to a third region of the process chamber and supplying a second reaction gas to the substrate;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
Wherein the first reaction induction unit comprises:
A plurality of first through holes for gas mixing and heating and a plurality of first through holes through which gas passing through the first flow path escape, A bottom plate provided to be laminated below the middle plate and having secondary flow paths for controlling the pressure and reaction time of the gas introduced through the first through holes, a bottom plate provided at the center of the bottom plate, And a spray nozzle connected to an end of the secondary flow paths on a side surface and spraying gas passing through the secondary flow paths onto a substrate through a plurality of spray holes formed on the bottom surface. Positioning the substrates on a substrate susceptor rotatably mounted in a process chamber and supporting a plurality of substrates;
Supplying a first reaction gas to a first substrate among the substrates;
Moving the first substrate to a second region of the process chamber and then pumping it with vacuum pressure;
Layer structure of the multi-layer composite structure is formed by a plurality of plates stacked on at least three layers, which are located in a third region of the process chamber, facing the substrate susceptor after moving the first substrate to a third region of the process chamber. Supplying a second reaction gas to the substrate with the reaction induction unit having the first reaction gas;
Moving the first substrate to a fourth region of the process chamber and then pumping the substrate to vacuum pressure,
The reaction induction unit may include:
A plurality of primary flow channels formed so as to be stacked below the top plate and adapted for mixing and heating the gases from the center to the edge, A middle plate having first through holes at the ends of the first flow passages so as to pass through the first through holes and a second plate provided below the middle plate for controlling the pressure and the reaction time of the gas introduced through the first through holes, A bottom plate formed so that the flow paths are directed from the edge to the center, and an injection nozzle connected to an end of the secondary flow paths to jet the gas passing through the secondary flow paths onto the substrate.
KR1020150052391A 2015-04-14 2015-04-14 method for forming thin film KR101668689B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090021032A (en) * 2007-08-24 2009-02-27 주식회사 케이씨텍 Injection unit of atomic layer deposition device
KR20100077889A (en) * 2008-12-29 2010-07-08 주식회사 케이씨텍 Atomic layer deposition apparatus
KR20110023289A (en) * 2009-08-31 2011-03-08 주식회사 아토 Gas injecting device and substrate processing apparatus using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090021032A (en) * 2007-08-24 2009-02-27 주식회사 케이씨텍 Injection unit of atomic layer deposition device
KR20100077889A (en) * 2008-12-29 2010-07-08 주식회사 케이씨텍 Atomic layer deposition apparatus
KR20110023289A (en) * 2009-08-31 2011-03-08 주식회사 아토 Gas injecting device and substrate processing apparatus using the same

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