KR101665588B1 - Heat spreader for semiconductor device and manufacturing method thereof - Google Patents

Heat spreader for semiconductor device and manufacturing method thereof Download PDF

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Publication number
KR101665588B1
KR101665588B1 KR1020160018574A KR20160018574A KR101665588B1 KR 101665588 B1 KR101665588 B1 KR 101665588B1 KR 1020160018574 A KR1020160018574 A KR 1020160018574A KR 20160018574 A KR20160018574 A KR 20160018574A KR 101665588 B1 KR101665588 B1 KR 101665588B1
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KR
South Korea
Prior art keywords
layer
grooves
metal
plating
organic coating
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KR1020160018574A
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Korean (ko)
Inventor
이동호
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주식회사 넥스플러스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]

Abstract

The present invention relates to a method for manufacturing a heat sink for a semiconductor device capable of improving reliability when performing a laser marking on a surface of a heat sink and preventing occurrence of scratch by increasing a surface hardness of a heat radiation unit. The heat sink of the present invention comprises: a metal heat radiation unit which discharges heat generated by a semiconductor chip outside by being coupled to a substrate having the semiconductor chip mounted thereon and has a plurality of grooves on a surface thereof; a copper sulfate layer plated on the whole side of the metal heat emitting unit along with a plurality of grooves formed on the whole side of the metal heat emitting unit by an electroless plating method; a nickel chloride strike layer plated on a surface of the copper sulfate layer; a nickel layer plated along the plurality of grooves by an electroless plating method to be bonded to the surface of the copper sulfate layer through the medium of the nickel chloride strike layer; and a transparent organic coating layer coated on the front side of the nickel layer to fill a plurality of grooves.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat spreader for semiconductor devices,

The present invention relates to a heat dissipation plate for a semiconductor device and a method of manufacturing the same, and more particularly to a heat dissipation plate for a semiconductor device, which is combined with a semiconductor device and emits heat generated in the semiconductor device to the outside, And more particularly, to a method of manufacturing a heat sink for a semiconductor device capable of improving reliability in laser marking on the surface of a heat sink for an element.

Semiconductor devices are being developed at higher density due to the development of semiconductor packaging technology. For example, in the semiconductor device, the development of a flip chip or a three dimensional packaging technology has progressed to higher density in which one or more semiconductor chips are packaged into a single semiconductor device. High-density packaging of semiconductor devices increases heat generation during operation of semiconductor devices, and a heat sink is required to prevent degradation of characteristics of semiconductor devices due to such heat generation.

Korean Patent Publication No. 2011-0030249 (Patent Document 1) relates to a semiconductor package, which comprises a substrate, a semiconductor chip, and a heat dissipation portion.

The substrate is formed with signal wirings for input / output of different types of signals on the upper surface, and ground wirings for dividing the signal wirings into signal wirings for input / output of the same kind of signals are formed, and partition walls contacting the ground wirings are formed do. The semiconductor chip is positioned on the upper surface of the substrate, and the heat dissipation portion is disposed on the semiconductor chip. The heat dissipation unit includes a heat conduction material and a heat dissipation plate. The heat conduction material is located on the upper surface of the semiconductor chip, and the heat dissipation plate covers the heat conduction material and the substrate.

The conventional heat dissipating plate disclosed in Korean Patent Publication No. 2011-0030249, that is, the heat dissipating plate has a problem that the surface hardness is lowered when the surface treatment is not performed, and when the surface hardness of the heat dissipating plate is lowered, There is a problem that scratches may easily occur on the surface of the heat sink.

Patent Document 1: Korean Patent Laid-Open Publication No. 2014-0130916 (published on November 12, 2014).

An object of the present invention is to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a semiconductor device in which a thickness of a plating is uniformly formed by electroless plating a heat sink for a semiconductor device, And a method of manufacturing a heat sink for a semiconductor device that can improve reliability in laser marking on a surface of a heat sink.

Another object of the present invention is to provide a semiconductor device which can increase the surface hardness of a heat dissipating member by applying a transparent organic coating on a surface of a heat dissipating plate for an electroless plating and for suppressing the occurrence of scratches, And a method of manufacturing a heat sink.

A heat dissipation plate for a semiconductor device according to the present invention includes a metal heat dissipation member coupled to a substrate on which a semiconductor chip is mounted to emit heat generated from the semiconductor chip to the outside and having a plurality of grooves formed on a surface thereof; A metal oxide layer on the front surface of the metal heat dissipation member, the metal oxide layer being plated by a plurality of grooves by an electroless plating method; A nickel chloride S / T layer (nickel strike layer) plated on the surface of the lactic acid layer; A nickel layer plated along the plurality of grooves by an electroless plating method so as to be adhered to the surface of the lactic acid layer through the nickel chloride S / T layer; And a transparent organic coating layer applied on the entire surface of the nickel layer so as to be filled with a plurality of grooves, wherein the metal heat dissipating member is formed of copper (Cu).

A method of manufacturing a heat sink for a semiconductor device according to the present invention includes: sanding a front surface of a metal strip; Pressing the metal strip so that the metal heat dissipating members are arranged at regular intervals on the metal strips when the sanding is completed; A first cutting step of cutting a metal strip at regular intervals to form a metal array member formed by arranging a plurality of metal heat dissipating members at regular intervals when the metal strip is pressed; Forming a plurality of grooves on the front surface of the metal array member by using anodic electrolysis when the metal array member is formed; Plating the plating layer on the entire surface of the metal array member along the plurality of grooves using the electroless plating method when the plurality of grooves are formed; Applying a transparent organic coating layer such that a plurality of grooves are filled with the plating layer; And a second cutting step of cutting a metal array member when the organic coating layer is applied to form a plurality of heat dissipation plates for semiconductor devices.

A heat radiating plate for a semiconductor device and a method of manufacturing the same according to the present invention can uniformly form a plating thickness by electroless plating a heat radiating plate for a semiconductor element which is coupled with a semiconductor element and emits heat generated from the semiconductor element to the outside, There is an advantage that reliability can be improved when laser marking the surface, and the surface hardness of the heat dissipating member is increased by applying a transparent organic film to the surface of the heat dissipating plate for the electrolessly plated semiconductor device, There is an advantage that the generation of scratches which can be suppressed can be suppressed.

1 is a perspective view of a heat sink for a semiconductor device according to the present invention,
FIG. 2 is an enlarged cross-sectional view of the heat radiating plate for semiconductor device shown in FIG. 1,
3 is a process flow diagram showing a method of manufacturing a heat sink for a semiconductor device according to the present invention,
FIG. 4 is a process flow chart illustrating a process of manufacturing a plating layer using the electroless plating method shown in FIG. 3,
FIG. 5 schematically shows a roll-to-roll process apparatus for performing the sanding shown in FIG. 3;
Fig. 6 is an enlarged perspective view of the metal strip wound on the take-up roll shown in Fig. 5,
7 is a perspective view showing a state in which the metal strip shown in Fig. 6 is pressed.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a heat sink for a semiconductor device and a method of manufacturing the same will be described with reference to the accompanying drawings.

1 and 2, the heat sink 10 for a semiconductor device according to the present invention includes a metal heat dissipating member 11, a copper sulfate (copper sulfate) layer 12, a nickel chloride S / T layer (a nickel strike layer) 13, A nickel layer 14 and an organic coating layer 15.

The metal heat dissipating member 11 is made of copper (Cu) and is coupled with the substrate 2 on which the semiconductor chip 1 is mounted to emit heat generated from the semiconductor chip 1 to the outside, The groove 11f is formed. The lactic acid layer 12 is plated on the entire surface of the metal heat dissipating member 11 along the plurality of grooves 11f by an electroless plating method. The nickel chloride S / T layer 13 is plated on the surface of the lactic acid layer 12 and the nickel layer 14 is bonded to the plurality of grooves (not shown) by an electroless plating method so as to be adhered via the nickel chloride S / 11f. The transparent organic coating layer 15 is applied to fill the entire surface of the nickel layer 14 with a plurality of grooves 11f.

The structure of the heat sink for a semiconductor device of the present invention will be described in more detail as follows.

The metal heat dissipating member 11 is made of copper (Cu) and has a plurality of grooves 11f formed on the front surface thereof to increase the heat radiation efficiency. As shown in FIGS. 2 and 7, A side wall plate 11b, and a contact plate 11c.

The coupling plate 11a is coupled to the substrate 2 on which the semiconductor chip 1 is mounted and the through hole 11d is formed at the center and the through hole 11d formed in the coupling plate 11a is formed in a rectangular shape. The side wall plate 11b is integrally formed so as to extend from the end of the through hole 11d formed in the coupling plate 11a and the contact plate 11c is formed to extend to the end of the side wall plate 11b, Or is contacted via the heat transfer medium 11e to discharge the heat generated in the semiconductor chip 1 to the outside. The contact plate 11c is formed integrally with the side wall plate 11b extending from the through hole 11d so that the side wall plate 11b is formed in a rectangular shape by the through hole 11d, Plate is used.

The lactic acid-based layer 12 is plated on the entire surface of the metal heat dissipating member 11 along the plurality of grooves 11f by an electroless plating method as shown in FIG. The lactic acid layer 12 is uniformly formed to have a uniform thickness along the plurality of grooves 11f formed on the front surface of the metal heat dissipating member 11. [ That is, the lactic acid layer 12 is plated to have a uniform conformal coverage along the plurality of grooves 11f by the electroless plating method, and is plated to a thickness of 1 to 5 占 퐉.

The nickel chloride S / T layer 13 is plated on the surface of the lactic acid layer 12 as shown in FIG. 2, and a nickel layer 14 is formed on the surface of the lactic acid layer 12 using electroless nickel plating or electrolytic plating It is used as a medium for bonding. The nickel layer 14 is plated along the plurality of grooves 11f by an electroless plating method so as to be adhered via the nickel chloride S / T layer 13 as shown in FIG. 2 to form the heat sink 10 for a semiconductor device of the present invention. Thereby improving the corrosion resistance. The nickel layer 14 is plated on the surface of the fluxhenate layer 12 along the plurality of grooves 11f with respect to the plurality of grooves 11f and the nickel layer 14 is plated with nickel chloride So as to have a uniform conformal coverage along the plurality of grooves 11f so that the heat sink 10 for a semiconductor device of the present invention has corrosion resistance and stain resistance, The thickness is plated to 1 to 5 mu m.

Since the flux layer 12 and the nickel layer 14 are formed by plating the electroless plating method on the metal heat dissipating member 11 in a uniform thickness and conformal to the plurality of grooves 11f, coverage can be prevented, thereby preventing defects in the laser marking operation that may occur due to thickness variations, thereby improving the reliability of the laser marking operation.

The transparent organic coating layer 15 is applied so that a plurality of grooves 11f are filled in the entire surface of the nickel layer 14 as shown in FIG. For example, the transparent organic coating layer 15 is formed on the surface of the nickel layer 14 so as to be filled with the plurality of grooves 11f by using a physical or chemical vapor deposition method so that the surface hardness of the surface of the heat radiation member 10 The surface of the heat sink 10 for a semiconductor device is entirely planarized, so that it can be easily cleaned when a contamination source is attached. In addition, the transparent organic coating layer 15 is formed of a transparent material so that the nickel layer 14 can be projected to the outside.

A method of manufacturing a heat sink for a semiconductor device of the present invention having the above-described structure will be described with reference to the accompanying drawings.

As shown in FIGS. 3 and 4, the method of manufacturing a heat sink for a semiconductor device according to the present invention first sandwiches a front surface of a metal strip 100 (shown in FIGS. 5 and 6) S10). After the sanding is completed, the metal strip 100 is pressed (S20) so that the metal heat releasing member 11 (shown in FIG. 7) is arranged and formed in the metal strip 100 at regular intervals. When the metal strips 100 are pressed, the metal strips 100 are cut at regular intervals to form the metal array members 110, which are formed by arranging the plurality of metal heat radiation members 11 at regular intervals. (S30). When the metal array member 110 is formed, a plurality of grooves 11a (shown in FIG. 2) are formed on the entire surface of the metal array member 110 by using anode electrolysis (S40). When a plurality of grooves 11f are formed on the front surface of the metal array member 110, a plating layer 10a (shown in FIG. 2) is plated on the entire surface of the metal array member 110 using an electroless plating method (S50). The transparent organic coating layer 15 is applied (S60) so that the plurality of grooves 11f are filled when the plating layer 10a is plated on the entire surface of the metal array member 110. When the transparent organic coating layer 15 is coated, The semiconductor device 110 is cut to perform a second cutting operation to form a plurality of heat sinks 10 for semiconductor devices (shown in FIGS. 1 and 2) (S70).

 A method of manufacturing a heat sink for a semiconductor device according to the present invention will now be described in detail.

 In the method of manufacturing a heat sink for a semiconductor device of the present invention, first, the entire surface of the metal strip 100 using copper is sanded (S10). Sanding of the metal strip 100 is performed using a roll to roll processing apparatus. For example, the metal strip 100 is wound on a take-up roll 200 as shown in FIG. 5, and then transports the metal strip 100 to a known sanding equipment 210. That is, the metal strips 100 are continuously transported to the sanding equipment 210, so that the entire surface of the metal strips 100 is sanded, and then recovered by the recovery rolls 220 via interposer (not shown).

When sanding is completed, metal strips 100 (see FIG. 7) are formed so as to be arranged in the metal strips 100 at regular intervals while transferring the metal strips 100 wound on the collection rolls 220 Is pressed (S20). The metal strip 100 wound on the recovery roll 220 is conveyed or the metal strip 100 is pressed by using a known technique to transfer the metal strip 100 to the metal strip 100, (11) is formed. When the metal strips 100 are pressed, the metal strips 100 are cut at regular intervals to form a plurality of metal heat dissipating members 11 arranged at regular intervals and a metal array member 110, A first cutting operation is performed (S30). Here, the metal array member 110 means that four to ten metal heat dissipating members 11 are formed at regular intervals, and the plating of the plating layer 10a is easily performed on the metal heat dissipating member 11. [ For example, the metal array member 110 shown in FIG. 7 can be easily handled when plating the plating layer 10a by performing the first cutting so as to form four metal heat radiating members 11 at regular intervals.

After the first cutting is completed, a plurality of grooves 11a (shown in FIG. 1) are formed on the entire surface of the metal array member 110 by using anode electrolysis (S40). The plurality of grooves 11f are formed by using the anode electrolysis, and the anode electrolytic cyanide is used. A plurality of grooves 11f formed on the front surface of the metal array member 110 are formed to securely adhere the plating layer 10a (shown in FIG. 2) to the metal array member 110, Thereby improving the heat radiation efficiency.

When a plurality of grooves 11f are formed on the front surface of the metal array member 110, the plating layer 10a (shown in FIG. 2) is plated using an electroless plating method (S50).

2 and 4, a plating step (S50) of the plating layer 10a using an electroless plating method is carried out by first subjecting the entire surface of the metal array member 110 to electroless plating The copper sulfate layer 12 is plated (S51). By plating the lactic acid layer 12 with the electroless plating method, the lactic acid layer 12 is plated to have a uniform thickness, that is, a conformal coverage, along the plurality of grooves 11f. When the lactic acid layer 12 is plated, a nickel chloride S / T layer 13 is plated on the surface of the lactic acid layer 12 by electroless plating or electrolytic plating (S52). The nickel chloride S / T layer 13 is electroless or electroplated.

When the nickel chloride S / T layer 13 is plated, a nickel layer (not shown) is formed along the plurality of grooves 11f by an electroless plating method so as to be adhered to the surface of the lactic acid layer 12 via the nickel chloride S / 14) is plated (S53). By plating the nickel layer 14 by the electroless plating method, the nickel layer 14 is adhered via the nickel chloride S / T layer 13 along the plurality of grooves 11f to form the surface of the sulfuric acid copper layer 12 To a uniform thickness, i. E., A conformal coverage. This nickel layer 14 improves the corrosion resistance of the metal array member 110.

When the plating of the nickel layer 14, that is, the plating layer 10a, is completed, the transparent organic coating layer 15 is applied as shown in FIGS. 2 and 3 (S60). The transparent organic coating layer 15 is formed to fill the plurality of grooves 11f to increase the surface hardness of the surface of the metal array member 110 to suppress the occurrence of scratches that may occur during handling of the metal array member 110 And the surface of the metal array member 110 is flattened by filling the plurality of grooves 11f with the organic coating layer 15 so that it can be easily cleaned when the contaminated gold is adhered. The organic coating layer 15 filled in the plurality of grooves 11f is applied by using a non-conformal coverage equipment known at the time of application. That is, the transparent organic coating layer 15 is formed on the entire surface of the nickel layer 14 so that the plurality of grooves 11f are filled, so that the nickel layer 14 can be projected to the outside.

As the transparent organic coating layer 15, a thermally conductive transparent organic coating is used, and as the thermally conductive transparent organic coating, a mixture of a thermally conductive dispersion and an organic resin is used. The thermally conductive dispersion contains a silicon powder and an aluminum powder, and each of the silicon powder and the aluminum powder has an average particle diameter of 0.5 탆 or less. As the organic resin, one or a mixture of two or more of urethane resin, acrylic resin, water-soluble epoxy, water-soluble polyester resin and water-soluble amino resin is used. The transparent organic coating layer 15 is formed so as to be filled in the plurality of grooves 10a when the edges of the plurality of grooves 10a are formed in a sharp manner so that the surface of the heat dissipating member 10 as a whole is smooth and smooth .

When the transparent organic coating layer 15 is formed, a second cutting operation is performed to form a plurality of heat sinks 10 for a semiconductor device by cutting the metal array member 110 as shown in FIGS. 2 and 3 (S70). The second cutting is performed by cutting the metal array member (110) into a heat sink (10) for an individual semiconductor element.

When the metal array member 110 is separated into the heat sinks 10 for semiconductor devices through the second cutting, it is inspected whether or not contaminants, that is, scratches or foreign substances are adhered to the surface of the heat sinks 10 for semiconductor devices. The inspection uses a known camera (not shown) to inspect the surface of the heat sink 10 for semiconductor devices to determine whether the heat sink 10 for semiconductor devices is defective or not.

As described above, the heat dissipating plate for a semiconductor device and the method of manufacturing the same according to the present invention can uniformly form a plating thickness by electroless plating a heat dissipating plate for a semiconductor device, which is coupled with a semiconductor device and emits heat generated in the semiconductor device to the outside The reliability of laser marking on the surface of the heat sink for a semiconductor device can be improved and the surface hardness of the heat dissipating member can be increased by applying a transparent organic film to the surface of the heat sink for electroless plating, It is possible to suppress the occurrence of scratches that may occur during the exposure.

The heat dissipation plate for a semiconductor device and the manufacturing method thereof according to the present invention can be applied to an assembly industry field of a semiconductor device.

10: heat sink for semiconductor device 11: metal heat dissipating member
12: sulfuric acid layer 13: nickel chloride S / T layer
14: Nickel layer 15: Organic coating layer
100: metal strip 110: metal array member

Claims (7)

delete delete delete Sanding the entire surface of the metal strip;
Pressing the metal strip so that the metal heat dissipating members are arranged at regular intervals on the metal strips when the sanding is completed;
A first cutting step of cutting a metal strip at regular intervals to form a metal array member formed by arranging a plurality of metal heat dissipating members at regular intervals when the metal strip is pressed;
Forming a plurality of grooves on the front surface of the metal array member by using anodic electrolysis when the metal array member is formed;
Plating the plating layer on the entire surface of the metal array member along the plurality of grooves using the electroless plating method when the plurality of grooves are formed;
Applying a transparent organic coating layer such that a plurality of grooves are filled with the plating layer; And
And a second cutting step of cutting the metal array member to form a plurality of heat sinks for semiconductor devices when the organic coating layer is applied,
In the step of forming the plurality of grooves, a plurality of grooves are formed by using anode electrolysis using sintering soda, respectively,
Wherein the step of plating the plating layer comprises: plating a sulfuric acid layer on the entire surface of the metal array member along a plurality of grooves by an electroless plating method; Plating a nickel chloride S / T layer (nikel strike layer) on the surface of the lactic acid layer; And plating a nickel layer along the plurality of grooves by an electroless plating method so as to be adhered to the surface of the lactic acid layer via the nickel chloride S / T layer,
Wherein the material of the metal array member in the step of plating the lactic acid layer is copper. 5. The method of claim 4,
Wherein the metal strip is formed of a copper (Cu) material in the sanding step. delete 5. The method of claim 4,
In the step of applying the transparent organic coating layer, the transparent organic coating layer may be a thermally conductive transparent organic coating, and the thermally conductive transparent organic coating may be a mixture of a thermally conductive dispersion and an organic resin,
Wherein the thermally conductive dispersion contains a silicon powder and an aluminum powder, the silicon powder and the aluminum powder each have an average particle diameter of 0.5 탆 or less,
Wherein the organic resin is made of one or more of a urethane resin, an acrylic resin, a water-soluble epoxy, a water-soluble polyester resin and a water-soluble amino resin.
KR1020160018574A 2016-02-17 2016-02-17 Heat spreader for semiconductor device and manufacturing method thereof KR101665588B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017654A (en) * 2000-08-31 2002-03-07 이형도 A method for manufacturing pcb on adhesive heatsink
KR20140104715A (en) * 2013-02-21 2014-08-29 황규복 Method of manufacturing heat spreader for semiconductor
KR20140130916A (en) 2013-05-02 2014-11-12 삼성전자주식회사 Semiconductor Package Having a EMI shielding and heat dissipation function
KR20140147719A (en) * 2013-06-19 2014-12-30 일진머티리얼즈 주식회사 Conducting heart dissipating sheet, electric component and electronics device comprising the sheet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017654A (en) * 2000-08-31 2002-03-07 이형도 A method for manufacturing pcb on adhesive heatsink
KR20140104715A (en) * 2013-02-21 2014-08-29 황규복 Method of manufacturing heat spreader for semiconductor
KR20140130916A (en) 2013-05-02 2014-11-12 삼성전자주식회사 Semiconductor Package Having a EMI shielding and heat dissipation function
KR20140147719A (en) * 2013-06-19 2014-12-30 일진머티리얼즈 주식회사 Conducting heart dissipating sheet, electric component and electronics device comprising the sheet

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