KR101654856B1 - Heater for growing single crystal and single crystal grower using it and method for growing single crystal - Google Patents

Heater for growing single crystal and single crystal grower using it and method for growing single crystal Download PDF

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KR101654856B1
KR101654856B1 KR1020150010420A KR20150010420A KR101654856B1 KR 101654856 B1 KR101654856 B1 KR 101654856B1 KR 1020150010420 A KR1020150010420 A KR 1020150010420A KR 20150010420 A KR20150010420 A KR 20150010420A KR 101654856 B1 KR101654856 B1 KR 101654856B1
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South Korea
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heater
single crystal
crucible
raw material
growing
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KR1020150010420A
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Korean (ko)
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KR20160090528A (en
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이희춘
최이식
문성환
장계원
나복기
배영숙
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주식회사 사파이어테크놀로지
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Priority to KR1020150010420A priority Critical patent/KR101654856B1/en
Priority to PCT/KR2015/002266 priority patent/WO2016117756A1/en
Publication of KR20160090528A publication Critical patent/KR20160090528A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to a heater for melting a raw material for growing a single crystal, and a single crystal growing apparatus and a growth method for growing a single crystal around a seed crystal from a molten raw material. The heater for single crystal growth has a plurality of heater portions separated in two or more stages in the vertical direction on the side portion around the crucible. Thus, the large-diameter single crystal can be grown while the temperature gradient of the crucible and the lower portion can be controlled stably, while the temperature gradient is increased. Each of the plurality of heater portions is formed of a heating element having a different width and thickness depending on positions, The temperature gradient can be increased.

Description

{HEATER FOR GROWING SINGLE CRYSTAL AND SINGLE CRYSTAL GROWER USING IT AND METHOD FOR GROWING SINGLE CRYSTAL}

The present invention relates to a heater for growing a single crystal and a method for growing a single crystal using the same and more particularly to a heater for melting a raw material for growing a single crystal and a heater for growing a single crystal A growth device and a growth method.

A single crystal is a crystal grown by melting a raw material such as metal, ceramics and SiC, followed by slow cooling.

Dual sapphire single crystal is grown while gradually cooled after being melted at least 2050 ℃ to alumina (Alumina, Al 2 O 3, aluminum oxide) for the source.

Sapphire single crystals have superior properties such as excellent optical, mechanical properties, high temperature stability, chemical resistance, high hardness, abrasion resistance, corrosion resistance and insulation characteristics compared with other materials used in semiconductors. And the like. Sapphire is widely used in high-tech materials by adopting sapphire materials in LED substrates and mobile companies.

Methods for growing crystals of metals, ceramics, and semiconductor materials, such as sapphire, can be divided into an upper seeding method and a lower seeding method depending on the position of the seed crystal disposed in the crucible. The upper seeding method includes Czochralski Process and Kyropouos Process, and the lower seeding method includes HEM (Heat Exchange Method) and VHGF (Vertical Horizontal Gradient Freezing).

Recently, as the application range of sapphire has been expanded, a large-diameter sapphire with a diameter of 6 inches or more is required. In order to cure the sapphire single crystal, the size of the sapphire single crystal increases and the growth time becomes longer.

According to Korean Patent Registration No. 10-1338366, a crucible for growing a sapphire ingot is disposed in a growth furnace, and a single heater is installed around the crucible.

In recent years, as the application range of sapphire has widened, a large-diameter sapphire having a diameter of 6 inches or more has been required. In order to manufacture a sapphire ingot having a large diameter, the size of the heater as well as the crucible must inevitably increase.

However, when a single heater is used for growing a large-diameter sapphire single crystal, the maximum heat is generated at the center of the sapphire ingot, and a large temperature gradient can not be applied to the upper and lower portions of the sapphire ingot.

As a result, the bubbles inside the ingot during the growth step can not float from the liquid interface to the liquid side, and defects are generated due to solidification in that state. In this case, there is a problem that the cost increases due to the increase of the production time and the deformation problem of the crucible exposed to the high temperature for a long time is involved. In the cooling step, residual stress is increased and cracks are generated.

On the other hand, in order to apply a large temperature gradient to the upper and lower portions of the ingot by using a single heater, the heater must be enlarged to move the maximum heat generating position of the ingot upward. In this case, do.

Therefore, growth stability is essential while forming a large temperature gradient in the growth of monodispersed single crystals.

In order to solve the problems of the background art described above, the present invention provides a heater for growing a single crystal having a simple temperature gradient control for growing a large diameter single crystal, and a single crystal growing apparatus and a growing method The purpose is to provide.

In order to solve the above-described problems, the heater for single crystal growth of the present invention is a heater for growing a single crystal which melts a raw material charged into a crucible, and has a plurality of heater portions separated in two or more stages in the vertical direction on the periphery of the crucible .

Preferably, each of the plurality of heater portions is made of a heating element in a zigzag shape, and the heating element has at least one of a width and a thickness different from each other depending on the position so as to give a temperature gradient in the vertical direction or the vertical and horizontal directions.

Preferably, the heating element is formed to have a smaller calorific value as it is closer to a seed crystal disposed in the crucible.

Preferably, a seed crystal is disposed on one of the upper and lower portions of the crucible, and the heating element has at least one of a width and a thickness relatively increased as the seed crystal is closer to the seed crystal.

Preferably, the heater control unit controls the amount of heat generated by each of the plurality of heater units. .

Preferably, the seed crystal is disposed on the crucible, and the heater control unit controls the upper heating value of the heater unit located below the plurality of heater units to be larger than the lower heating value of the heater unit disposed on the upper side.

Preferably, the seed crystal is disposed at a lower portion of the crucible, and the heater control unit controls the lower end calorific value of the heater located above the plurality of heater units to be larger than the upper calorific value of the heater located below.

Preferably, the heat transfer area of the heater located above the plurality of heaters is smaller than the heat transfer area of the heater located below.

Preferably, the heater driving unit raises and lowers the plurality of heater units. .

Preferably, at least one of the upper and lower crucibles includes at least one reflection plate for reflecting radiant energy radiated from the heater to the crucible. .

According to another aspect of the present invention, there is provided a single crystal growth apparatus comprising: a chamber having an internal space; A heat insulating material disposed inside the chamber; A crucible disposed in the heat insulating material and charged with a raw material; And a heater for melting the raw material, the heater including a plurality of heater portions separated in two or more stages in the vertical direction on the side of the crucible; .

Preferably, the raw material is alumina (Al 2 O 3 , aluminum oxide), and the single crystal is sapphire single crystal.

Preferably, each of the plurality of heater portions is formed of a heating element in a zigzag shape, and at least one of the width and the thickness is made different depending on the position so as to give a temperature gradient in the vertical direction or the vertical and horizontal directions.

According to another aspect of the present invention, there is provided a single crystal growth method comprising: charging a raw material into a crucible; A melting step of melting a raw material by heating a heater having a plurality of heater portions separated in two or more stages in a vertical direction on a side of the crucible; A growth step of growing the molten raw material into a single crystal; And a cooling step of cooling the grown single crystal; .

Preferably, each of the plurality of heater portions is formed of a heating element in a zigzag shape, and at least one of the width and the thickness is made different depending on the position so as to give a temperature gradient in the vertical direction or the vertical and horizontal directions.

Preferably, in the melting step, the heater control unit controls the output of the plurality of heater units at 100%.

Preferably, in the growing step, the heater control unit controls the amount of heat generated by each of the plurality of heater units so that a temperature gradient in the crucible and a temperature in the lower part are larger than the cooling step.

Preferably, the plurality of heater portions comprise an upper heater portion and a lower heater portion disposed below the upper heater portion and having a heat transfer area larger than the heat transfer area of the upper heater portion. In the growing step, So that the additional heat takes up more than 50% and not more than 90% of the total heating value of the heater.

Preferably, the plurality of heater portions comprise an upper heater portion and a lower heater portion disposed below the upper heater portion and having a heat transfer area larger than the heat transfer area of the upper heater portion. In the cooling step, So that the additional heat takes up less than 85% of the total heating value of the heater.

According to the present invention, by providing a plurality of heater portions separated in the vertical direction, it is possible to stably control the temperature while increasing the temperature gradient in the crucible and the lower portion, thereby allowing the growth of the large diameter single crystal.

In addition, according to the present invention, each of the plurality of heater portions is formed of a heating element having a different width and thickness depending on the position, thereby making it possible to increase the temperature gradient in the vertical direction or in the vertical and horizontal directions.

Further, the present invention can improve the heating efficiency inside the crucible by providing a reflector on the top or bottom of the crucible to reflect the radiant energy to the crucible.

1 is a cross-sectional view of a single crystal growth apparatus according to a first embodiment of the present invention;
Fig. 2 is a front view showing the shape of a heater constituting the present invention; Fig.
3 is a perspective view showing another embodiment of a heater constituting the present invention.
4 is a cross-sectional view of a single crystal growing apparatus according to a second embodiment of the present invention.
5 is a cross-sectional view of a single crystal growth apparatus according to a third embodiment of the present invention.
6 is a cross-sectional view of a single crystal growing apparatus according to a fourth embodiment of the present invention.
7 is a flow chart illustrating a single crystal growth method of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The single crystal growth apparatus using the heater for single crystal growth of the present invention can be classified into the first to fourth embodiments, and the constituent elements of the respective embodiments are basically the same, but there are differences in some configurations. In addition, among the various embodiments of the present invention, the same reference numerals in the drawings are used for the same functional elements and functions.

In the following embodiments, a single crystal growth apparatus in which a sapphire single crystal is grown by a bottom seeding method using alumina (Al 2 O 3 , aluminum oxide) as a raw material is specifically described. However, a single crystal growth apparatus using a raw material other than alumina It is of course also possible to use the device or the single crystal growth device by the upper seeding method.

1. First Embodiment

The single crystal growing apparatus according to the first embodiment of the present invention comprises a chamber 10, a heat insulating material 20, a crucible 30, a heater 40 and a heater control unit as shown in Fig.

The chamber 10 has an internal space, and the heat insulating material 20, the crucible 30, the heater 40, and the like are disposed therein.

The heat insulating material 20 is disposed inside the chamber 10 and the heat supplied from the heater 40 can be insulated inside the chamber 10 to increase the heat efficiency of the heater 40. [

The crucible 30 accommodates the alumina raw material charged to grow the sapphire single crystal. The crucible 30 may be formed of a metal material such as tungsten, molybdenum, iridium, or rhenium that does not melt even at a melting temperature of 2050 ° C, which is the temperature of alumina, to slowly cool the alumina raw material and then slowly cool it to grow the sapphire single crystal.

Further, the crucible 30 is disposed inside the heat insulating material 20. [ A seed crystal 31 is disposed in the crucible 30 and a cooling part 32 is provided in the crucible 30 below the crucible 30 in which the seed crystal 31 is disposed. The seed crystal 31 is disposed under the crucible 30 by the lower seeding method, and the sapphire single crystal is grown around the seed crystal 31. The cooling part 32 is made of a material such as tungsten or molybdenum, and can prevent the seed crystal 31 from being melted completely upon melting, and can be cooled by using a gas or a liquid during growth and cooling.

The heater 40 generates heat to melt the alumina raw material in the crucible 30 and has a plurality of heater portions separated in two or more stages in the vertical direction on the side around the crucible 30. The use of a plurality of heater portions can control each heater portion in comparison with the use of a single heater, thereby increasing the temperature gradient and facilitating the control thereof. Therefore, the large-diameter sapphire crystal can be grown using the crucible 30 having a large height in the vertical direction.

The plurality of heaters are composed of upper and lower heaters 41 and 42, and the heat transfer areas of the upper and lower heaters 41 and 42 may be different from each other. At this time, by making the heat transfer area of the upper heater part 41 smaller than the heat transfer area of the lower heater part 42, the highest heat generating position of the heater 40 can be raised. This makes it possible to impart a suitable temperature gradient to the crucible 30 by separating the seed crystal 31 disposed at the bottom of the crucible 30 by the lower seeding method as much as possible from the maximum heat generating position.

Further, each of the plurality of heater portions is made of a heating element in a zigzag shape, and a graphite heating element can be used. Each of the plurality of heater portions increases the growth stability of the sapphire single crystal by providing a temperature gradient in the vertical and horizontal directions to grow the single crystal without defects such as cracks in the interior and can relieve the stress applied to the single crystal in a short time have. In particular, by providing a horizontal temperature gradient, it is possible to grow long without limitation on the length of the single crystal in the width direction.

Two types of heater sections for imparting a temperature gradient to the heater will be described in detail below.

First, as a first form, each of the upper and lower heater sections 41 and 42 gives a temperature gradient with different widths depending on positions in the vertical and horizontal directions. As shown in Fig. 2, the temperature gradient in the vertical direction of the heating element can be given by setting the upper line width W1 of the heating element to be relatively narrower than the lower line width W2. Since the electrical resistance of the lower heating element is lower than that of the upper heating element, the temperature of the lower heating element is lower than the upper heating element. The horizontal temperature gradient of the heating element can be given by setting the left and right side line widths W3 and W4 of the heating element to be relatively narrower than the center line width W5.

In the second form, each of the upper and lower heater sections 43 and 44 gives a temperature gradient with different thicknesses depending on positions in the vertical and horizontal directions. As shown in Fig. 3, the temperature gradient in the vertical direction of the heating element can be given by setting the upper thickness T1 of the heating element to be relatively thinner than the lower thickness T2. Since the electric resistance of the lower portion of the thick heating element is lower than that of the upper portion, the temperature of the lower portion of the heating element is adjusted to be lower than that of the upper portion. The temperature gradient in the horizontal direction of the heating element can be given by setting the left and right side thicknesses T3 and T1 of the heating element to be relatively thinner than the center thickness T4.

According to the above-described two types of heater portions, the heat generation amount is made smaller as the seed crystal is disposed closer to the seed crystal centered on the position of the seed crystal disposed in the crucible, thereby enhancing the growth stability of the single crystal. Further, the heater part may be in any form as long as it can impart a temperature gradient in the vertical and horizontal directions in addition to the two types described above.

The heater control unit controls the amount of heat generated by each of the plurality of heater units. The heater control unit can control each of the heater units so that the lower heat generation amount of the upper heater unit is larger than the upper heat generation amount of the lower heater unit so as to prevent temperature inversion at the boundary of the heater unit that is separated upward and downward.

The single crystal growing method using the single crystal growing apparatus according to the first embodiment of the present invention is a method of growing a single crystal by melting a raw material to be charged into a crucible and then slowly cooling the same to perform a charging step (S10), a melting step (S20) (S30) and a cooling step (S40).

In the charging step S10, seed crystals are placed in the lower part of the crucible and the raw materials are charged into the crucible. At this time, the raw material used is a sapphire single crystal grown as alumina. In addition to alumina, metals and ceramics and semiconductor materials such as SiC and ZeSe may be used.

In the melting step (S20), a heater having a plurality of heater portions separated in the vertical direction around the crucible is operated to heat the alumina raw material in the crucible to 2050 占 폚 or higher and melt it. At this time, the heater control unit can control the output of the plurality of heater units at 100% to increase the melting rate of the raw material.

In the growing step S30, the heating amount of the heater is gradually lowered to grow the molten raw material into a single crystal. In the growth step S30, since the single crystal is grown around the seed crystal, it is preferable that the heater is formed to have a relatively small calorific value as the seed crystal is closer to the seed crystal. For this purpose, the heater control unit can control the amount of heat generated by the upper and lower heaters, respectively, according to the heat transfer area of the upper and lower heaters.

When the heat transfer area of the upper heater portion is smaller than the heat transfer area of the lower heater portion, the heater control portion can control the upper heater portion to occupy more than 50% and less than 90% of the total heat generation amount of the heater. When the amount of heat generated by the upper heater portion is 50% or less of the total amount of heat generated by the heater, the amount of heat generated by the lower heater portion adjacent to the seed crystal is larger, so that the temperature of the lower portion of the heater nearer to the seed crystal becomes higher than that of the upper portion. . When the amount of heat generated by the upper heater exceeds 90% of the total amount of heat generated by the heater, the rate of growth of the single crystal in the latter half of the growth stage decreases, thereby reducing the production efficiency of the ingot. Therefore, the temperature gradient can be increased by making the upper part of the ingot relatively higher in temperature than the lower part.

In the cooling step S40, the ingot in which the growth of the single crystal is completed is cooled. In the cooling step (S40), the ingot should be cooled uniformly as much as possible. Therefore, it is preferable that the heater generates a calorific value so as to minimize the difference between the maximum and minimum temperatures of the ingot. For this purpose, the heater control unit can control the amount of heat generated by the upper and lower heaters according to the heat transfer area of the upper and lower heaters, respectively, so that the highest heat generating position of the heaters is located at the center of the ingot.

When the heat transfer area of the upper heater portion is smaller than the heat transfer area of the lower heater portion, the heater control portion can control the upper heater portion to occupy 85% or less of the total heater heat generation amount in order to cool the ingot as uniformly as possible. If the amount of heat generated by the upper heater portion exceeds 85% of the total amount of heat generated by the heater, the temperature gradient of the ingot becomes too large to cause a crack due to stress. Therefore, the temperature gradient can be minimized by making the upper and lower portions of the ingot have a temperature as uniform as possible.

At the beginning of the cooling step (S40), the temperature of the heater can be maintained for a certain period of time to eliminate the residual stress in the grown single crystal.

In the growth step (S30), the temperature gradients of the ingot and the lower portion are greatly increased, and in the cooling step (S40), the heating amounts of the upper and lower heater portions can be controlled so as to cool the ingot to a uniform temperature. Specifically, in the growth step (S30), if the temperature gradient in the crucible phase and the lower temperature is large, the bubbles generated inside the single crystal are increased, defects are small during single crystal growth, and growth stability is improved. In the cooling step (S40), if the temperature gradient is large, cracks due to stress may be generated, and since it is cooled unevenly, it is preferable that the temperature gradient of the ingot lower than that in the growth step (S30).

2. Second Embodiment

The second embodiment of the present invention differs from the first embodiment in that a heater driving unit is additionally constructed. Hereinafter, description of the same components as those of the first embodiment will be omitted, and the components of the second embodiment, which differ from the first embodiment, will be mainly described with reference to FIG.

The heater driving unit 50 drives the plurality of heaters to move up and down. The plurality of heater portions that are raised and lowered can be combined with each other and can be integrally raised and lowered. The heater driving unit 50 and the plurality of heater units may be connected by a heater driving arm 51 to transmit the driving force from the heater driving unit 50 to the heater unit.

On the other hand, although not shown in the drawing, the crucible driving unit may further include a crucible driving unit for moving the crucible up and down in the direction opposite to the heater. By simultaneously operating the crucible driving portion and the heater driving portion, the moving space in the crucible can be reduced, and the vibration due to the rising and falling of the crucible can be minimized.

A method of raising and lowering the plurality of heater sections by the heater driving section according to the second embodiment of the present invention will be described concretely with reference to the process steps.

In the melting step, in order to rapidly melt the entire raw material in the crucible, the heater driving unit lowers the plurality of heater units toward the seed crystal and positions them at the lowermost position.

In the growth step, the heater driving section drives the heater so as to be gradually lifted up in the direction opposite to the seed crystal. When the heater is lifted and lowered, the lower end of the heater having the lowest temperature is separated from the seed crystal disposed at the lower portion of the crucible, so that the temperature gradient in the crucible upper and lower portions can be controlled to a greater extent. At this time, the heater can be driven at a constant speed throughout the growth step. However, since the temperature gradient of the crucible is appropriately formed at the beginning of the growth stage, the heater is stopped for the stability of the growth of the single crystal, and the temperature gradient of the crucible decreases in the middle and the latter stages. .

In the cooling step, in order to uniformly cool the ingot, the heater driving part drives the heater so that the highest heat generating position of the heater is located at the center of the ingot so that the maximum and minimum temperature differences of the ingot are minimized.

By thus raising and lowering the plurality of heater sections, melting of the alumina raw material and growth and cooling rate of the single crystal can be improved. Further, it is easy to control the temperature gradient in the vertical direction, thereby minimizing defects and obtaining a high-quality sapphire single crystal.

3. Third Embodiment

The third embodiment of the present invention differs from the first embodiment in that a reflector and a reflector driver are additionally constructed. Hereinafter, description of the same components as those of the first embodiment will be omitted, and the components of the third embodiment, which differ from the first embodiment, will be mainly described with reference to FIG.

At least one of the upper reflector 61 and the lower reflector 62 is provided on the reflector 60 to reflect the radiant energy to the crucible 30. The reflector 60 is made of any one or more of tungsten, molybdenum, iridium, and rhenium, which does not melt even at a melting temperature of 2050 DEG C as in the case of the crucible 30, or a material coated with such a metal or alloy As shown in FIG.

The shape of the reflection plate 60 may be concave toward the crucible 30.

Although not shown in the drawing, the reflector may be provided horizontally in the crucible or in the lower part, or may be provided so that both sides of the reflector are inclined toward the crucible.

It is preferable that the upper reflector 61 is provided on the upper part of the crucible 30 and is provided inside the upper end of the uppermost heater part of the plurality of heaters.

It is preferable that the lower reflector 62 is provided in the lower part of the crucible 30 and is provided inside the lower end of the heater part of the lowermost one of the plurality of heaters. The lower reflector 62 may be formed with a hole so as not to interfere with the cooling part 32 raised and lowered by the cooling part 32 drawn out to the outside of the chamber 10 at the lower part of the crucible 30. [ have.

The reflector driving unit 70 drives the reflector 60 to move up and down. When the reflective plate 70 driving unit places the reflection plate 60 away from the crucible 30, the radiation energy radiated from the heater 40 is reflected to the crucible 30. On the other hand, when the reflection plate 60 is positioned close to the crucible 30, the reflection plate 60 serves as a cover of the crucible 30 to block radiation energy radiated from the heater 40 to the crucible 30. Meanwhile, a plurality of reflection plate driving units 70 may be provided to drive the upper and lower reflection plates 61 and 62, respectively.

Although not shown in the drawing, it is also possible to include a single reflector driving unit to simultaneously drive the upper and lower reflectors.

The reflector plate driving unit 70 and the reflector plate 60 may be connected to each other by a reflector plate driving arm 71 to transmit the driving force from the reflector plate driving unit 70 to the reflector plate 60.

A method of raising and lowering the upper and lower reflectors by the reflector driving unit according to the third embodiment of the present invention will be described in detail with reference to the process steps.

In the melting step, in order to rapidly melt the raw materials in the crucible, the reflector driving unit drives both the upper and lower reflectors to be spaced apart from the crucible. That is, the upper reflector plate is raised and lowered, and the lower reflector plate is lowered.

In the growing stage, the reflector driving unit elevates both the upper and lower reflectors to increase the temperature gradient of the crucible. The upper reflector is spaced apart from the upper crucible and the lower reflector is positioned closer from the crucible bottom.

In the cooling step, the reflector driving section drives both the upper and lower reflectors as close as possible to the crucible for rapid cooling. Accordingly, the upper reflector plate is lowered, and the lower reflector plate is raised and lowered, so that the upper and lower reflector plates are driven toward the crucible.

By thus raising and lowering the upper and lower reflectors, it is possible to melt the alumina raw material and improve the growth and cooling rate of the single crystal. Further, it is easy to control the temperature gradient in the vertical direction, thereby minimizing defects and obtaining a high-quality single crystal.

4. Fourth Embodiment

The fourth embodiment of the present invention differs from the first embodiment in that a heater driving unit, a reflecting plate, and a reflector driving unit are additionally constructed. Hereinafter, description of the same components as those of the first embodiment will be omitted, and the components of the fourth embodiment, which differ from the first embodiment, will be described with reference to FIG.

The heater driving unit 50 drives the plurality of heater units to move up and down, and has the same structure and function as the heater driving unit 50 of the second embodiment.

The reflection plate 60 is provided with at least one of an upper reflector 61 provided on the upper part of the crucible 30 and a lower reflector 62 provided on the lower part of the crucible 30, .

The reflector driving unit 70 drives the reflector 60 to move up and down.

The reflector 60 and the reflector driver 70 have the same structure and function as the reflector and reflector driver of the third embodiment.

A method of raising and lowering the heater and the upper and lower reflector respectively by the heater driving unit and the reflection plate driving unit according to the fourth embodiment of the present invention will be described concretely according to the process steps.

In the melting step, the heater driving unit lowers the heater to quickly melt the raw material in the crucible, and the reflector driving unit drives the upper and lower reflectors to be spaced apart from the crucible.

In the growth step, the heater driving unit lifts up the heater to increase the temperature gradient of the crucible, and the reflector driving unit elevates both the upper and lower reflector plates.

In the cooling step, the heater driving unit drives the heater so that the highest heat generating position of the heater is positioned at the center of the ingot, and the reflector driving unit drives the upper and lower reflectors as close as possible to the crucible.

In the case of the upper seeding method in which the seed crystal is disposed in the upper part of the crucible, although not shown in the drawing, since the sapphire single crystal grows around the seed crystal, the temperature of the upper part of the crucible in which the seed crystal is disposed is set to the lowest, It is preferable that a temperature gradient is given so that the temperature becomes higher as the distance from the center of gravity increases. Therefore, the temperature gradient in the vertical direction of the heat generating element is adjusted to be lower than the upper temperature of the heat generating element in contrast to the first embodiment. In order to impart a temperature gradient according to the position of each heater portion heating element, as in the first embodiment, at least one of the width and the thickness may be relatively increased as the seed crystal is closer to the seed crystal, so that the heating value can be reduced.

At this time, the heater control unit can control each heater unit such that the upper heating value of the lower heater unit is larger than the lower heating value of the upper heater unit.

While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10: chamber
20: Insulation
30: Crucible
31: seed crystal
32: Cooling section
40: heater
50: heater driving part
60: reflector
70:

Claims (19)

1. A single crystal growth heater for melting a raw material charged into a crucible,
A plurality of heater sections separated in two or more stages in the vertical direction on the side of the crucible;
A heater driving unit for moving the plurality of heater units up and down; Lt; / RTI >
Seed crystals are arranged on either the upper or lower part of the crucible,
Wherein each of the plurality of heater portions is made of a heating element in a zigzag shape,
Wherein a temperature gradient is applied in a vertical direction and a horizontal direction by varying at least one of a width and a thickness of the heating element depending on a position so that a heat generation amount becomes closer to the seed crystal,
The heater driving section drives the heater so that the highest heat generation position of the heater is directed toward the seed crystal in the melting step of the raw material or is directed toward the central portion of the ingot in the cooling step of the single crystal ingot in which crystal growth is completed Heaters for single crystal growth. delete delete delete The method according to claim 1,
A heater control unit for controlling a heating value of each of the plurality of heater units; And a heater for heating the single crystal. The method of claim 5,
Wherein the seed crystal is disposed on an upper portion of the crucible,
Wherein the heater control unit controls the upper heater calorific value of the heater unit located at the lower one of the plurality of heater units to be larger than the lower heat value of the heater unit located at the upper part. The method of claim 5,
Wherein the seed crystal is disposed at a lower portion of the crucible,
Wherein the heater control unit controls the lower end calorific value of the heater unit located above the plurality of heater units to be larger than the upper calorific value of the heater unit located below. The method of claim 7,
Wherein a heat transfer area of a heater located at an upper portion of the plurality of heaters is smaller than a heat transfer area of a heater located at a lower portion of the plurality of heaters. delete The method according to claim 1,
At least one reflector for reflecting radiant energy radiated from the heater to at least one of the top and bottom of the crucible to the crucible; Further comprising a heater for heating the single crystal. A chamber having an interior space;
A heat insulating material disposed inside the chamber;
A crucible disposed in the heat insulating material and charged with a raw material; And
A heater of claim 1; Wherein the single crystal growth apparatus comprises a single crystal growth apparatus. The method of claim 11,
Wherein the raw material is alumina (Alumina, Al 2 O 3 , aluminum oxide), and the single crystal is a sapphire single crystal. delete In the single crystal growth method using the heater for single crystal growth according to claim 5,
Charging the raw material into the crucible;
A melting step of melting a raw material by heating a heater having a plurality of heater portions separated in two or more stages in a vertical direction on a side of the crucible;
A growth step of growing the molten raw material into a single crystal; And
A cooling step of cooling the grown single crystal; Wherein the single crystal growth method comprises the steps of: delete 15. The method of claim 14,
Wherein the heater control unit controls the output of the plurality of heater units to be 100% in the melting step. 15. The method of claim 14,
Wherein the heater control unit controls the amount of heat generated by each of the plurality of heater units so that the temperature gradient of the crucible and the temperature of the lower crucible are larger than the cooling step. 15. The method of claim 14,
Wherein the plurality of heaters comprise an upper heater portion and a lower heater portion disposed below the upper heater portion and having a heat transfer area larger than a heat transfer area of the upper heater portion,
Wherein in the growing step, the heater control section controls the upper heater section to occupy more than 50% and less than 90% of the total heater calorific value. 15. The method of claim 14,
Wherein the plurality of heaters comprise an upper heater portion and a lower heater portion disposed below the upper heater portion and having a heat transfer area larger than a heat transfer area of the upper heater portion,
Wherein in the cooling step, the heater control section controls the upper heater section to occupy 85% or less of the total heater calorific value.
KR1020150010420A 2015-01-22 2015-01-22 Heater for growing single crystal and single crystal grower using it and method for growing single crystal KR101654856B1 (en)

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PCT/KR2015/002266 WO2016117756A1 (en) 2015-01-22 2015-03-10 Heater for growing monocrystals, monocrystal growth device using same, and growth method

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CN109837593A (en) * 2019-03-29 2019-06-04 徐州晶睿半导体装备科技有限公司 Heater and single crystal growing furnace with it
AT524602B1 (en) * 2020-12-29 2023-05-15 Fametec Gmbh Apparatus for producing a single crystal
CN115216834B (en) * 2022-07-27 2024-02-27 四川晶科能源有限公司 Heater and single crystal furnace
CN115029777B (en) * 2022-07-27 2024-02-27 四川晶科能源有限公司 Heater and single crystal furnace

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JP2003212691A (en) * 2002-01-17 2003-07-30 Shin Etsu Handotai Co Ltd Method and apparatus for manufacturing silicon single crystal
JP2013095610A (en) 2011-10-28 2013-05-20 Sumco Corp Apparatus and method for producing sapphire single crystal

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US8241424B2 (en) * 2005-09-30 2012-08-14 Sumco Techxiv Kabushiki Kaisha Single crystal semiconductor manufacturing apparatus and manufacturing method
JP5163101B2 (en) * 2007-12-25 2013-03-13 信越半導体株式会社 Single crystal manufacturing apparatus and manufacturing method
KR101136143B1 (en) * 2009-09-05 2012-04-17 주식회사 크리스텍 Method and Apparatus for Growing Sapphire Single Crystal

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JP2003212691A (en) * 2002-01-17 2003-07-30 Shin Etsu Handotai Co Ltd Method and apparatus for manufacturing silicon single crystal
JP2013095610A (en) 2011-10-28 2013-05-20 Sumco Corp Apparatus and method for producing sapphire single crystal

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