KR101613462B1 - Apparatus for Chemical-Mechanical Polishing of Wafer - Google Patents

Apparatus for Chemical-Mechanical Polishing of Wafer Download PDF

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Publication number
KR101613462B1
KR101613462B1 KR1020160018430A KR20160018430A KR101613462B1 KR 101613462 B1 KR101613462 B1 KR 101613462B1 KR 1020160018430 A KR1020160018430 A KR 1020160018430A KR 20160018430 A KR20160018430 A KR 20160018430A KR 101613462 B1 KR101613462 B1 KR 101613462B1
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South Korea
Prior art keywords
slurry
washing water
polishing pad
pad
passage
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KR1020160018430A
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Korean (ko)
Inventor
김오수
권병호
김우승
김한성
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주식회사 티에스시
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Priority to KR1020160018430A priority Critical patent/KR101613462B1/en
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Publication of KR101613462B1 publication Critical patent/KR101613462B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The present invention relates to a chemical mechanical polishing apparatus having a slurry supply unit supplying slurry. The slurry supply unit includes: a slurry guiding flow channel; an outflow port of the slurry guiding flow channel; a guiding flow channel block; a spray assisting gas pipe; a slurry washing water pipe; a slurry washing water spraying member; an assisting gas spraying member; and a slurry spraying member. According to the present invention, the chemical mechanical polishing apparatus can supply the slurry to an upper side of a polishing pad by a spray method while stably maintaining an opening state of a slurry spraying aperture.

Description

Technical Field [0001] The present invention relates to a chemical mechanical polishing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical wafer polishing apparatus, and more particularly, to a polishing apparatus for polishing a surface of a wafer by friction between a polishing pad and a wafer while supplying a slurry (including an abrasive) to the surface of the polishing pad.

BACKGROUND OF THE INVENTION Wafers used in the manufacture of integrated circuits and other electronic devices are fabricated by depositing or removing a plurality of layers of conductive, semi-conductive and dielectric materials on the surface of the substrate .

The surface of the wafer thus produced is not flat during the process of deposition or removal, and is thus planarized through a polishing process.

A chemical mechanical wafer polishing apparatus for polishing a surface of a wafer by a method of rubbing the wafer with a polishing pad while supplying slurry (including an abrasive) to the surface of the polishing pad is used as one of the devices for polishing the wafer.

FIG. 18 is a perspective view of a conventional chemical mechanical wafer polishing apparatus, and FIG. 19 is a view showing a slurry supplying unit of a conventional chemical mechanical wafer polishing apparatus.

As shown in these drawings, the conventional chemical mechanical wafer polishing apparatus includes a polishing pad 111, a polishing head 112 provided above the polishing pad 111 so as to face the polishing pad 111, A support arm 113 provided in the peripheral region of the pad 111 and a slurry supply unit 130 for supplying slurry to the upper surface of the polishing pad 111. [

A guide channel 113a is formed in the support arm 113 along the longitudinal direction.

The slurry supply unit 130 includes a plurality of nozzle carriers 131 installed on a guide channel 113a so as to be movable along the longitudinal direction of the support arm 113 and a plurality of nozzle carriers 131 connected to the nozzle carriers 131 via a control valve 134 A slurry supply pipe 132, and a slurry drop nozzle 133 installed in each of the nozzle carriers 131.

The slurry drop nozzle 133 is structured such that the slurry falls in a drop manner.

The slurry supply process of the conventional chemical mechanical wafer polishing apparatus having such a structure will be described as follows.

The supporting arm 113 is rotated to the upper side of the polishing pad 111 through a predetermined control unit.

Next, the control valve 134 is opened through a predetermined control unit.

The slurry is supplied to the slurry supply pipe 132 while the control valve 134 is opened.

The slurry supplied to the slurry supply pipe 132 is supplied to the upper side of the polishing pad 111 through a slurry drop nozzle 133 in a drop manner.

However, according to the conventional chemical mechanical wafer polishing apparatus, since the slurry is supplied to the upper side of the polishing pad 111 by a drop method through the slurry drop nozzle 133, the slurry is uniformly supplied to the polishing pad 111 There is a problem that the amount of slurry that can not be provided in the contact area between the polishing pad 111 and the wafer 201 increases due to the centrifugal force generated when the polishing pad 111 rotates.

If the slurry is not uniformly supplied to the polishing pad 111, there arises a second problem that the flatness of the polishing surface of the wafer 201 is lowered.

If the amount of slurry that can not be supplied to the contact area between the polishing pad 111 and the wafer 201 in the slurry dropped on the polishing pad 111 increases, the amount of slurry to be supplied per unit time increases. .

As a related prior art, Korean Patent Laid-Open Publication No. 10-2004-0054254 (published on Jun. 25, 2004, entitled "Chemical Mechanical Polishing Facility and Slurry Supply Apparatus"), A technique relating to a conventional chemical mechanical wafer polishing apparatus is disclosed.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a chemical mechanical wafer polishing apparatus capable of supplying a slurry to an upper side of a polishing pad in an injection system while stably maintaining an open state of a slurry jetting opening.

According to an aspect of the present invention, there is provided a polishing pad comprising: a polishing pad; a polishing head disposed above the polishing pad to face the polishing pad; and a polishing head disposed in a peripheral region of the polishing pad, A pad washing water supply pipe provided on the support arm so as to be disposed along the longitudinal direction of the support arm and a pad washing water supply pipe connected to the pad washing water supply pipe, A pad washing water supply part provided on the support arm for supplying the pad washing water to the upper side of the polishing pad and a slurry supply pipe provided on the supporting arm so as to be disposed along the longitudinal direction of the supporting arm, Having a slurry supply portion for supplying a slurry to the upper surface of the polishing pad Wherein the slurry supply unit includes a slurry guide passage, a spray auxiliary gas guide passage, and a slurry wash water guide passage formed therein so that an inlet and an outlet are respectively exposed on an outer surface of the slurry supply passage, A guide channel block provided on the support arm such that an outlet of the channel and an outlet of the slurry wash water guide channel are disposed on the longitudinal end side of the support arm; A slurry washing water pipe provided on the supporting arm so as to be connected to an inlet port of the slurry washing water guiding channel, and a washing water passage for connecting the outer surface and the inner circumferential surface of the air hole, And the air hole is connected to an outlet of the slurry guide passage A slurry washing water injection member disposed at a lower side of the outlet of the flow path and coupled to the guide channel block so that the washing water propulsion passage is connected to the slurry washing water guide passage, and a pair of auxiliary gas spraying passages having a phase difference of 180 degrees, And an auxiliary gas injection member installed above the slurry washing water injection member such that an upper end of the auxiliary gas spraying passage is connected to the spray auxiliary gas guide passage; and a slurry spraying passage formed along the height direction The upper end of the slurry spray path is connected to the slurry guide path and the lower end of the slurry spray path is disposed in the spray area of the washing water sprayed through the washing water splashing path, ; And the slurry supply pipe is installed to be connected to the inlet of the slurry guide passage.

Wherein the slurry spraying passage is formed in a straight line so as to increase the slurry spraying area; It is preferable that the slurry jetting member is installed such that the opening surface of the lower end of the slurry jetting path is upwardly inclined with respect to the upper surface of the polishing pad along the direction away from the end of the supporting arm.

And the slurry jetting passage is formed in a straight line so as to increase the slurry jetting area; The slurry spraying member is rotated clockwise in a state of being parallel to the upper surface of the polishing pad, assuming that the slurry spraying member looks at the support arm toward the center of the polishing pad from the outside of the polishing pad, It is preferable to arrange it at the position where it is located.

Therefore, according to the present invention, the slurry is sprayed to the upper surface of the polishing pad through the spray tube using negative pressure generated when the spray auxiliary gas is sprayed from the pair of auxiliary gas spray paths having a phase difference of 180 degrees The lower end of the spray tube portion through which the slurry is sprayed can be cleaned so that the slurry can be supplied to the upper side of the polishing pad by the spraying method while stably maintaining the open state of the slurry spraying opening. Accordingly, the slurry is uniformly supplied to the polishing pad, and the amount of slurry which can not be provided in the contact area of the polishing pad and the wafer due to the centrifugal force generated when the polishing pad rotates can be reduced.

When the slurry is uniformly supplied to the polishing pad, the flatness of the wafer polishing surface can be improved.

If the amount of slurry that can not be provided in the contact area of the polishing pad and the wafer decreases, the amount of slurry to be supplied per unit time decreases.

1 is a perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
2 is a perspective exploded perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
FIGS. 3 and 4 illustrate a guide channel block, a slurry washing water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
5, 6, and 7 are diagrams illustrating guide channel blocks of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
FIGS. 8, 9, 10, and 11 illustrate a slurry washing water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
12 and 13 are views respectively showing a slurry washing water injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
14 and 15 are views for explaining the effect of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
16 is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to another embodiment of the present invention,
17 is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to still another embodiment of the present invention,
FIG. 18 is a perspective view of a conventional chemical mechanical wafer polishing apparatus,
19 is a view showing a slurry supply unit of a conventional chemical mechanical wafer polishing apparatus.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIG. 2 is a perspective exploded perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIGS. 3 and 4 FIGS. 5, 6, and 7 are views showing a guide channel block, a slurry wash water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIGS. 8, 9, 10 and 11 are views showing a guide channel block of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention. 12 and 13 are diagrams showing a slurry washing water injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively, and FIGS. 12 and 13 are views showing a spray member, an auxiliary gas spray member and a slurry spray member, It is cotton.

As shown in these figures, the chemical mechanical wafer polishing apparatus according to one embodiment of the present invention includes a polishing pad 11 and a polishing head 11 provided on the top of the polishing pad 11 so as to face the polishing pad 11, A supporting arm 13 provided in a peripheral region of the polishing pad 11, a driving unit for rotating the supporting arm 13, and a pad washing water supplying unit 12 for supplying pad washing water to the upper side of the polishing pad 11, And a slurry supply unit 30 for supplying slurry to the upper surface of the polishing pad 11.

The polishing pad 11 and the polishing head 12 are rotated by a predetermined driving unit. The construction of the driving part of the polishing pad 11 and the polishing head 12 is well known in the art, and thus a detailed description thereof will be omitted.

The support arm 13 is rotated to the upper side of the polishing pad 11 along the surface direction of the polishing pad 11 by a predetermined driving portion. The structure of the driving unit of the support arm is well known in the art, and thus a detailed description thereof will be omitted.

A support arm cover (15) is provided on the upper side of the support arm (13).

The pad washing water supply unit 20 has a pad washing water supply pipe 21 and a pad washing water injection member 22 provided on the supporting arm 13.

The pad washing water supply pipe 21 is provided so as to be disposed along the longitudinal direction of the support arm 13. [

The pad wash water supply pipe 21 is connected to the pad wash water tank. As the pad washing water, DIW (de-ionized water) or the like can be used.

The pad washing water injection member 22 is connected to the pad washing water supply pipe 21 and is installed so that the pad washing water can be sprayed toward the upper surface of the polishing pad 11.

The pad washing water supply unit 20 having such a configuration is controlled by a predetermined control unit to supply the pad washing water to the upper side of the polishing pad 11 in accordance with the polishing process of the wafer. The configuration of the pad washing water supply unit 20 is well known in the art, and a detailed description thereof will be omitted.

The slurry supply unit 30 includes a guide channel block 40 provided in the support arm 13, a slurry supply pipe 32 provided in the support arm 13 so as to be disposed along the longitudinal direction of the support arm 13, 33, a slurry washing water pipe 34, a slurry washing water injection member 50 coupled to the guide channel block 40, an auxiliary gas injection member 60 provided above the slurry washing water injection member 50, A sealing ring 35 provided between the slurry washing water injecting member 50 and the auxiliary gas injecting member 60 and a sealing ring 35 provided between the slurry washing water injecting member 50 and the auxiliary gas injecting member 60. The slurry spraying member 70 is disposed above the gas injecting member 60, A guide plate 36 provided on the upper side and a pair of stoppers 37 provided on the guide channel block 40. [

The guide channel block 40 includes a polygonal guide channel block body 41 and a guide channel block body 42 protruding from the front surface of the guide channel block body 41. The guide channel block body 41 And a washing water passage forming member 43 joined to the side surface of the washing water passage forming member 43.

The guide channel block body portion 41 and the guide channel block head portion 42 are provided with an inlet port on the back surface of the guide channel block body portion 41 and a slurry guide portion 42 having an outlet port in an area connected to a slurry guide pipe 42a And a flow path 40a is formed.

The guide channel block body section 41 and the guide channel block head section 42 are provided with an inlet port on the back surface of the guide channel block body section 41 and an outlet port in an area connected to a jetting auxiliary gas guide groove 42b The spray auxiliary gas guide passage 40b is formed.

The injection auxiliary gas guiding passage 40b is formed to have a section extending from the bottom surface of the guide channel block body portion 41 to the front surface of the guide channel block head portion 42. [

A part of the slurry washing water guide passage 40c having an inlet at the back surface of the guide channel block body portion 41 and having an outlet at the front surface of the guide channel block body portion 41 is formed in the guide channel block body portion 41 have.

A slurry guide pipe 42a is formed on the bottom surface of the guide channel block head 42 and a spray auxiliary gas guide groove 42b is formed in the peripheral region of the slurry guide pipe 42a.

The washing water flow path forming member 43 is formed with a slurry washing water guiding channel groove 43a for forming the remaining part of the slurry washing water guiding channel 40c.

The washing water flow path forming member 43 is coupled to the guide channel block body portion 41 such that the slurry washing water guide channel groove 43a is combined with the slurry washing water guide path portion formed in the guide channel block body portion 41. [

The guide channel block 40 having such a configuration is arranged so that the outlet port of the slurry guide passage 40a, the outlet port of the spray auxiliary gas guide passage 40b, and the outlet port of the slurry washing water guide passage are arranged on the longitudinal end side of the support arm 13, (13). Here, the guide channel block 40 is mounted on the support arm 13 through the connection block 81. The connection block 81 is coupled to the support arm 13.

The slurry supply pipe 32 is installed to be connected to the inlet of the slurry tank and the slurry guide passage 40a.

The injection auxiliary body tube 33 is installed in the support arm 13 so as to be connected to the inlet of the injection auxiliary gas tank and the injection auxiliary gas guide passage 40b. Nitrogen gas or the like may be used as the injection auxiliary body.

The slurry wash water pipe 34 is installed in the support arm 13 so as to be connected to the inlet of the slurry wash water tank and the slurry wash water guide passage 40c. As the slurry washing water, DIW (de-ionized water) or the like can be used.

The slurry wash water injection member 50 is formed in a substantially rectangular parallelepiped shape and has an air hole 51 formed along the height direction.

A pair of arcuate support shoulders 52 are formed to be spaced apart from each other in a region below the inner peripheral surface of the eye relief 51.

The slurry washing water spraying member 50 is provided with a washing water separation passage 50a for connecting the outer surface of the slurry washing water spray member 50 to the inner peripheral surface of the air hole 51.

The slurry wash water injection member 50 having such a constitution is configured such that the air hole 51 is positioned below the outlet of the slurry guide passage 40a and the outlet of the spray auxiliary gas guide passage 40b, Lt; / RTI >

The slurry wash water injection member 50 is coupled to the guide channel block head 42 such that the wash water propulsion passage 50a is connected to the slurry wash water guide passage 40c.

The auxiliary gas injection member 60 includes a concave auxiliary gas injection member body portion 61 and a pair of auxiliary gas injection projections 61 protruding from the bottom surface of the auxiliary gas injection member body portion 61 to have a phase difference of 180 degrees, And a member leg portion (62).

The auxiliary gas injection member body portion 61 has a slurry injection tube insertion hole 61a formed at the center of the bottom surface thereof.

Each auxiliary gas injection member leg portion 62 is formed with an inclined surface 62a which is inclined upward toward the center of the auxiliary gas injection member body portion 61.

The auxiliary gas injection member 60 is formed with a pair of auxiliary gas injection passages 60a for connecting the bottom surface of the auxiliary gas injection member body 61 to each inclined surface 62a.

The auxiliary gas injection member 60 having such a constitution is configured such that the upper end of the auxiliary gas injection path 60a is connected to the injection auxiliary gas guide groove 42b, the injection auxiliary gas passage hole 36b and the injection auxiliary gas guide hole 72a, And is connected to the spray auxiliary gas guiding flow path 40b through the slurry washing water spraying member 50. [

The auxiliary gas injection member 60 is disposed above the end of the inner circumferential surface of the washing water introducing path 50a at the lower end of the auxiliary gas injection path 60a and is connected to the slurry washing water injection member 50 ).

The slurry jetting member 70 includes a concave inner groove portion 71, an outer groove portion 72 formed so as to surround the inner groove portion 71, and a flange portion 72 formed outwardly from the upper end of the outer groove portion 72 73 and a slurry spray pipe portion 74 extending downward from the bottom surface of the inner groove portion 71. [

A slurry guide hole 71a is formed on the bottom surface of the groove portion 71 so as to be connected to the slurry spray pipe portion 74.

On the bottom surface of the outer groove portion 72, a jetting auxiliary gas guide hole 72a is formed.

The slurry spray pipe portion 74 constitutes a slurry spray path together with the slurry guide hole 71a.

The slurry spraying member 70 having such a configuration is connected to the slurry guide path 71a through the slurry guide path 42a to the upper end of the slurry spraying path, And the lower end of the slurry injection tube portion 74 is disposed above the lower end of the auxiliary gas injection path 60a.

The slurry jetting member 70 is installed so that the lower end of the slurry jetting passage, that is, the lower end of the slurry jetting tube portion 74 is disposed at the same height as the washing water retention passage 50a. Accordingly, the lower end of the slurry spraying passage, that is, the lower end of the slurry spraying tube portion 74 is disposed in the spraying region of the washing water sprayed through the washing water dusting passage 50a.

The lower end of the slurry spraying passage 70 is substantially aligned with the upper surface of the polishing pad 11 and the lower end of the lower end of the slurry spraying tube portion 74 is substantially aligned with the slurry spraying tube portion 74, (61a).

A guide tube insertion hole 36a is formed at the center of the guide plate 36 and a plurality of injection auxiliary gas passage holes 36b are formed around the guide tube insertion hole 36a.

The pair of stoppers 37 are installed in the injection auxiliary gas guide passage 40b so as to be disposed at the bottom surface of the guide passage block body portion 41 and at the portion extending to the front surface of the guide passage block head portion 42. [

The slurry supply operation of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention will now be described. The polishing head 12 is disposed on the upper side of the polishing pad 11 and the wafer 201 is held on the upper surface of the polishing pad 11 in a state of being adsorbed on the bottom surface of the polishing head 12 It is assumed to be in contact.

The control unit controls the slurry supply unit 30 such that the spray auxiliary gas and the slurry are supplied to the auxiliary gas injection member 60 and the slurry injection member 70 through the injection auxiliary body tube 33 and the slurry supply pipe 32. Where the injection auxiliary gas is supplied at a pressure of approximately 5 kgf / cm 2 and the slurry is supplied at a pressure of approximately 1 kgf / cm 2. When the supply amount (liter / minute) of the slurry is approximately 1, it is preferable that the injection auxiliary gas is supplied at 40 (volume ratio) or more.

The injection auxiliary gas supplied to the auxiliary gas injection member 60 is injected through the pair of auxiliary gas injection flow paths 60a.

A negative pressure is formed below the tubular spray tube portion 74 when the spray auxiliary gas is injected through the pair of auxiliary gas spray passages 60a so that the slurry supplied to the slurry spray member 70 Is sprayed on the upper surface of the polishing pad 11 through the slurry spray pipe portion 74. [

When the polishing process of one wafer 201 is completed, the control unit stores the polished wafer, moves the polishing head unit 12 to a position deviated from the polishing pad 11 to attract the wafer to be polished to the polishing head unit .

The control unit controls the slurry supply unit 30 to supply the slurry wash water to the slurry wash water injection member 50 through the slurry wash water pipe 34 and supplies the slurry wash water to the pad wash water injection member 22 through the pad wash water supply pipe 21 The pad washing water supply unit 20 is controlled so that the pad washing water is supplied.

The slurry washing water supplied to the slurry washing water spraying member 50 is sprayed toward the lower end of the slurry spraying pipe portion 74 so that the slurry discharged through the lower end of the slurry spraying pipe portion 74 is dropped onto the upper surface of the polishing pad 11 do.

The pad washing water supplied to the pad washing water spraying member 22 is sprayed onto the polishing pad 11 so that the bottom of the slurry spraying pipe portion 74 is washed by the byproducts generated in the polishing process and the slurry washing water, ) Is washed away.

When the cleaning by the pad washing water is completed, the control unit moves the polishing head unit 12 to which the wafer 201 to be polished is sucked to the upper surface of the polishing pad 11.

The slurry spraying member 70 is provided so that the opening surface of the lower end of the slurry spraying flow path is substantially aligned with the upper surface of the polishing pad 11. However, A slurry jetting member 70 is provided so as to be upwardly inclined along the direction away from the end of the support arm 13 with respect to the upper surface of the polishing pad 11, The slurry jetting member 70 is disposed so as to be disposed in a clockwise direction in a state where the opening surface of the lower end of the slurry jetting flow path is parallel to the upper surface of the polishing pad 11, Can be performed.

When the slurry jetting member 70 is installed so as to be upwardly inclined, the slurry jetting area can be increased as shown in FIG.

In the case where the slurry jetting member 70 is disposed so as to be disposed in the clockwise direction, the slurry jetting area can be increased as shown in FIG.

As described above, according to the embodiment of the present invention, the negative pressure generated when the jet auxiliary gas is jetted from the pair of auxiliary gas jetting passages 60a having a phase difference of 180 degrees is used to transfer the slurry to the polishing pad 11 through the slurry jetting tube portion 74 while cleaning the lower end of the slurry jetting tube portion 74 through which the slurry is sprayed so that the open state of the slurry jetting openings can be stably maintained, So that the slurry can be supplied to the upper side of the polishing pad 11. The slurry is uniformly supplied to the polishing pad 11 and the amount of slurry which can not be provided in the contact area between the polishing pad 11 and the wafer 201 due to centrifugal force generated when the polishing pad 11 rotates is reduced .

When the slurry is uniformly supplied to the polishing pad 11, the flatness of the polishing surface of the wafer 201 can be improved.

When the amount of slurry which can not be provided in the contact area between the polishing pad 11 and the wafer 201 decreases, the amount of slurry to be supplied per unit time decreases.

As shown in Figs. 14 and 15 (each of which is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention), in the case of the present invention, the slurry is uniformly supplied on the polishing pad 11 (See "A" in Fig. 14), and a portion where the slurry collects on the polishing pad 11 (refer to "A" in Fig.

For reference, the amount of slurry (see "B") present under the wafer 201 disposed inside the retaining ring of the polishing heads 12 and 112 is similar to the present invention in the conventional case. Reference numerals 11a and 111a in FIGS. 14 and 15 are grooves formed for uniformly moving the slurry on the polishing pads 11 and 111, respectively.

The slurry jetting member 70 is installed so that the opening surface of the lower end of the slurry jetting flow path is inclined upward along the direction away from the end of the supporting arm 13 with respect to the upper surface of the polishing pad 11, Of the slurry spraying path is viewed from the outside of the polishing pad 11 toward the center of the polishing pad 11, the opening surface of the lower end of the slurry spraying path is aligned with the upper surface of the polishing pad 11, It is possible to increase the slurry jetting area. When the slurry ejection area is increased, the slurry is supplied evenly to the polishing pad 11 and is not supplied to the contact area between the polishing pad 11 and the wafer 201 due to the centrifugal force generated when the polishing pad 11 rotates The amount of slurry can be further reduced.

11, 111: polishing pad 12, 112: polishing head
13, 113: Support arms 20, 120: Pad wash water supply part
21: Pad wash water supply pipe 22: Pad wash water spray member
30, 130: Slurry supply part 32, 132: Slurry supply pipe
33: injection auxiliary body tube 34: slurry washing tube
40: guide channel block 41: guide channel block body
42: guide flow block head 50: slurry wash water injection member
51: Ophthalmic implant 52: Support jaw
60: auxiliary gas injection member 70: slurry injection member
131: nozzle carrier 133: slurry drop nozzle

Claims (3)

A support arm provided in a peripheral region of the polishing pad so as to be able to rotate along the direction of the surface of the polishing pad; A pad washing water supply pipe provided on the support arm so as to be disposed along the longitudinal direction of the support arm and a pad washing water supply pipe connected to the support arm for spraying the pad washing water toward the upper surface of the polishing pad, A pad washing water supply unit for supplying pad washing water to the upper side of the polishing pad with a pad washing water jetting member installed thereon and a slurry feeding pipe provided on the supporting arm so as to be disposed along the longitudinal direction of the supporting arm, 1. A chemical mechanical wafer polishing apparatus having a slurry supply section for supplying a slurry,
The slurry supply unit has a slurry guide passage, a spraying auxiliary gas guide passage and a slurry wash water guide passage formed therein so that the inlet and the outlet are exposed to the outer surface, respectively, and the outlet of the slurry guide passage, A guide duct block provided on the support arm so that an outlet of the slurry wash water guide passage is disposed on the longitudinal end side of the support arm, a spray auxiliary body tube provided on the support arm to be connected to an inlet of the spray assistant gas guide passage, A slurry washing water pipe provided in the support arm to be connected to an inlet port of the washing water guide channel, a washing water passage for connecting the outer surface of the slurry washing water pipe to the inner circumferential surface of the air hole, And the outlet of the slurry guide passage and the outlet of the injection auxiliary gas guide passage And a pair of auxiliary gas jet flow paths having a phase difference of 180 degrees are formed along the height direction, and the slurry washing water jetting member is connected to the guide channel block so that the washing water- And an auxiliary gas injection member installed above the slurry wash water injection member such that an upper end of the auxiliary gas injection path is connected to the spray assistant gas guide flow path, a slurry spraying flow path formed along the height direction, And an upper end of the slurry spraying passage is connected to the slurry guide passage and the lower end of the slurry spraying passage is disposed in a spray area of the washing water sprayed through the washing water splashing passage;
Wherein the slurry supply pipe is installed to be connected to an inlet of the slurry guide passage. The method according to claim 1,
The slurry spraying passage is formed in a straight line;
Wherein the slurry spraying member is installed such that an opening surface of a lower end of the slurry spray path is upwardly inclined along a direction away from an end of the support arm with respect to an upper surface of the polishing pad. The method according to claim 1,
The slurry spraying passage is formed in a straight line;
The slurry spraying member is rotated clockwise in a state of being parallel to the upper surface of the polishing pad, assuming that the slurry spraying member looks at the support arm toward the center of the polishing pad from the outside of the polishing pad, Wherein the chemical mechanical polishing apparatus comprises:
KR1020160018430A 2016-02-17 2016-02-17 Apparatus for Chemical-Mechanical Polishing of Wafer KR101613462B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109414801A (en) * 2016-06-24 2019-03-01 应用材料公司 Slurry distribution apparatus for chemically mechanical polishing
CN113675113A (en) * 2021-08-20 2021-11-19 华海清科股份有限公司 Horizontal wafer cleaning device and cleaning method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200267181Y1 (en) * 2001-11-29 2002-03-09 동부전자 주식회사 Chemical-mechanical polisher

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200267181Y1 (en) * 2001-11-29 2002-03-09 동부전자 주식회사 Chemical-mechanical polisher

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109414801A (en) * 2016-06-24 2019-03-01 应用材料公司 Slurry distribution apparatus for chemically mechanical polishing
US11077536B2 (en) 2016-06-24 2021-08-03 Applied Materials, Inc. Slurry distribution device for chemical mechanical polishing
CN109414801B (en) * 2016-06-24 2021-09-03 应用材料公司 Slurry distribution apparatus for chemical mechanical polishing
CN113675113A (en) * 2021-08-20 2021-11-19 华海清科股份有限公司 Horizontal wafer cleaning device and cleaning method
CN113675113B (en) * 2021-08-20 2024-04-05 华海清科股份有限公司 Wafer horizontal cleaning device and cleaning method

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