KR101613462B1 - Apparatus for Chemical-Mechanical Polishing of Wafer - Google Patents
Apparatus for Chemical-Mechanical Polishing of Wafer Download PDFInfo
- Publication number
- KR101613462B1 KR101613462B1 KR1020160018430A KR20160018430A KR101613462B1 KR 101613462 B1 KR101613462 B1 KR 101613462B1 KR 1020160018430 A KR1020160018430 A KR 1020160018430A KR 20160018430 A KR20160018430 A KR 20160018430A KR 101613462 B1 KR101613462 B1 KR 101613462B1
- Authority
- KR
- South Korea
- Prior art keywords
- slurry
- washing water
- polishing pad
- pad
- passage
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 141
- 239000002002 slurry Substances 0.000 claims abstract description 227
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 104
- 238000005406 washing Methods 0.000 claims abstract description 81
- 238000005507 spraying Methods 0.000 claims abstract description 43
- 239000007921 spray Substances 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims description 69
- 239000007924 injection Substances 0.000 claims description 69
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 57
- 235000012431 wafers Nutrition 0.000 description 52
- 239000000969 carrier Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical wafer polishing apparatus, and more particularly, to a polishing apparatus for polishing a surface of a wafer by friction between a polishing pad and a wafer while supplying a slurry (including an abrasive) to the surface of the polishing pad.
BACKGROUND OF THE INVENTION Wafers used in the manufacture of integrated circuits and other electronic devices are fabricated by depositing or removing a plurality of layers of conductive, semi-conductive and dielectric materials on the surface of the substrate .
The surface of the wafer thus produced is not flat during the process of deposition or removal, and is thus planarized through a polishing process.
A chemical mechanical wafer polishing apparatus for polishing a surface of a wafer by a method of rubbing the wafer with a polishing pad while supplying slurry (including an abrasive) to the surface of the polishing pad is used as one of the devices for polishing the wafer.
FIG. 18 is a perspective view of a conventional chemical mechanical wafer polishing apparatus, and FIG. 19 is a view showing a slurry supplying unit of a conventional chemical mechanical wafer polishing apparatus.
As shown in these drawings, the conventional chemical mechanical wafer polishing apparatus includes a
A
The
The
The slurry supply process of the conventional chemical mechanical wafer polishing apparatus having such a structure will be described as follows.
The supporting
Next, the
The slurry is supplied to the
The slurry supplied to the
However, according to the conventional chemical mechanical wafer polishing apparatus, since the slurry is supplied to the upper side of the
If the slurry is not uniformly supplied to the
If the amount of slurry that can not be supplied to the contact area between the
As a related prior art, Korean Patent Laid-Open Publication No. 10-2004-0054254 (published on Jun. 25, 2004, entitled "Chemical Mechanical Polishing Facility and Slurry Supply Apparatus"), A technique relating to a conventional chemical mechanical wafer polishing apparatus is disclosed.
SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a chemical mechanical wafer polishing apparatus capable of supplying a slurry to an upper side of a polishing pad in an injection system while stably maintaining an open state of a slurry jetting opening.
According to an aspect of the present invention, there is provided a polishing pad comprising: a polishing pad; a polishing head disposed above the polishing pad to face the polishing pad; and a polishing head disposed in a peripheral region of the polishing pad, A pad washing water supply pipe provided on the support arm so as to be disposed along the longitudinal direction of the support arm and a pad washing water supply pipe connected to the pad washing water supply pipe, A pad washing water supply part provided on the support arm for supplying the pad washing water to the upper side of the polishing pad and a slurry supply pipe provided on the supporting arm so as to be disposed along the longitudinal direction of the supporting arm, Having a slurry supply portion for supplying a slurry to the upper surface of the polishing pad Wherein the slurry supply unit includes a slurry guide passage, a spray auxiliary gas guide passage, and a slurry wash water guide passage formed therein so that an inlet and an outlet are respectively exposed on an outer surface of the slurry supply passage, A guide channel block provided on the support arm such that an outlet of the channel and an outlet of the slurry wash water guide channel are disposed on the longitudinal end side of the support arm; A slurry washing water pipe provided on the supporting arm so as to be connected to an inlet port of the slurry washing water guiding channel, and a washing water passage for connecting the outer surface and the inner circumferential surface of the air hole, And the air hole is connected to an outlet of the slurry guide passage A slurry washing water injection member disposed at a lower side of the outlet of the flow path and coupled to the guide channel block so that the washing water propulsion passage is connected to the slurry washing water guide passage, and a pair of auxiliary gas spraying passages having a phase difference of 180 degrees, And an auxiliary gas injection member installed above the slurry washing water injection member such that an upper end of the auxiliary gas spraying passage is connected to the spray auxiliary gas guide passage; and a slurry spraying passage formed along the height direction The upper end of the slurry spray path is connected to the slurry guide path and the lower end of the slurry spray path is disposed in the spray area of the washing water sprayed through the washing water splashing path, ; And the slurry supply pipe is installed to be connected to the inlet of the slurry guide passage.
Wherein the slurry spraying passage is formed in a straight line so as to increase the slurry spraying area; It is preferable that the slurry jetting member is installed such that the opening surface of the lower end of the slurry jetting path is upwardly inclined with respect to the upper surface of the polishing pad along the direction away from the end of the supporting arm.
And the slurry jetting passage is formed in a straight line so as to increase the slurry jetting area; The slurry spraying member is rotated clockwise in a state of being parallel to the upper surface of the polishing pad, assuming that the slurry spraying member looks at the support arm toward the center of the polishing pad from the outside of the polishing pad, It is preferable to arrange it at the position where it is located.
Therefore, according to the present invention, the slurry is sprayed to the upper surface of the polishing pad through the spray tube using negative pressure generated when the spray auxiliary gas is sprayed from the pair of auxiliary gas spray paths having a phase difference of 180 degrees The lower end of the spray tube portion through which the slurry is sprayed can be cleaned so that the slurry can be supplied to the upper side of the polishing pad by the spraying method while stably maintaining the open state of the slurry spraying opening. Accordingly, the slurry is uniformly supplied to the polishing pad, and the amount of slurry which can not be provided in the contact area of the polishing pad and the wafer due to the centrifugal force generated when the polishing pad rotates can be reduced.
When the slurry is uniformly supplied to the polishing pad, the flatness of the wafer polishing surface can be improved.
If the amount of slurry that can not be provided in the contact area of the polishing pad and the wafer decreases, the amount of slurry to be supplied per unit time decreases.
1 is a perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
2 is a perspective exploded perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
FIGS. 3 and 4 illustrate a guide channel block, a slurry washing water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
5, 6, and 7 are diagrams illustrating guide channel blocks of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
FIGS. 8, 9, 10, and 11 illustrate a slurry washing water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively;
12 and 13 are views respectively showing a slurry washing water injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
14 and 15 are views for explaining the effect of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
16 is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to another embodiment of the present invention,
17 is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to still another embodiment of the present invention,
FIG. 18 is a perspective view of a conventional chemical mechanical wafer polishing apparatus,
19 is a view showing a slurry supply unit of a conventional chemical mechanical wafer polishing apparatus.
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIG. 2 is a perspective exploded perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIGS. 3 and 4 FIGS. 5, 6, and 7 are views showing a guide channel block, a slurry wash water injection member, an auxiliary gas injection member, and a slurry injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, FIGS. 8, 9, 10 and 11 are views showing a guide channel block of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention. 12 and 13 are diagrams showing a slurry washing water injection member of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, respectively, and FIGS. 12 and 13 are views showing a spray member, an auxiliary gas spray member and a slurry spray member, It is cotton.
As shown in these figures, the chemical mechanical wafer polishing apparatus according to one embodiment of the present invention includes a
The
The
A support arm cover (15) is provided on the upper side of the support arm (13).
The pad washing
The pad washing
The pad wash
The pad washing
The pad washing
The
The
The guide channel
The guide channel
The injection auxiliary
A part of the slurry washing
A
The washing water flow
The washing water flow
The
The
The injection
The slurry wash
The slurry wash
A pair of arcuate support shoulders 52 are formed to be spaced apart from each other in a region below the inner peripheral surface of the
The slurry washing
The slurry wash
The slurry wash
The auxiliary
The auxiliary gas injection
Each auxiliary gas injection
The auxiliary
The auxiliary
The auxiliary
The
A
On the bottom surface of the
The slurry
The
The
The lower end of the
A guide
The pair of
The slurry supply operation of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention will now be described. The polishing
The control unit controls the
The injection auxiliary gas supplied to the auxiliary
A negative pressure is formed below the tubular
When the polishing process of one
The control unit controls the
The slurry washing water supplied to the slurry washing
The pad washing water supplied to the pad washing
When the cleaning by the pad washing water is completed, the control unit moves the polishing
The
When the
In the case where the
As described above, according to the embodiment of the present invention, the negative pressure generated when the jet auxiliary gas is jetted from the pair of auxiliary
When the slurry is uniformly supplied to the
When the amount of slurry which can not be provided in the contact area between the polishing
As shown in Figs. 14 and 15 (each of which is a view for explaining the effect of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention), in the case of the present invention, the slurry is uniformly supplied on the polishing pad 11 (See "A" in Fig. 14), and a portion where the slurry collects on the polishing pad 11 (refer to "A" in Fig.
For reference, the amount of slurry (see "B") present under the
The
11, 111: polishing
13, 113:
21: Pad wash water supply pipe 22: Pad wash water spray member
30, 130:
33: injection auxiliary body tube 34: slurry washing tube
40: guide channel block 41: guide channel block body
42: guide flow block head 50: slurry wash water injection member
51: Ophthalmic implant 52: Support jaw
60: auxiliary gas injection member 70: slurry injection member
131: nozzle carrier 133: slurry drop nozzle
Claims (3)
The slurry supply unit has a slurry guide passage, a spraying auxiliary gas guide passage and a slurry wash water guide passage formed therein so that the inlet and the outlet are exposed to the outer surface, respectively, and the outlet of the slurry guide passage, A guide duct block provided on the support arm so that an outlet of the slurry wash water guide passage is disposed on the longitudinal end side of the support arm, a spray auxiliary body tube provided on the support arm to be connected to an inlet of the spray assistant gas guide passage, A slurry washing water pipe provided in the support arm to be connected to an inlet port of the washing water guide channel, a washing water passage for connecting the outer surface of the slurry washing water pipe to the inner circumferential surface of the air hole, And the outlet of the slurry guide passage and the outlet of the injection auxiliary gas guide passage And a pair of auxiliary gas jet flow paths having a phase difference of 180 degrees are formed along the height direction, and the slurry washing water jetting member is connected to the guide channel block so that the washing water- And an auxiliary gas injection member installed above the slurry wash water injection member such that an upper end of the auxiliary gas injection path is connected to the spray assistant gas guide flow path, a slurry spraying flow path formed along the height direction, And an upper end of the slurry spraying passage is connected to the slurry guide passage and the lower end of the slurry spraying passage is disposed in a spray area of the washing water sprayed through the washing water splashing passage;
Wherein the slurry supply pipe is installed to be connected to an inlet of the slurry guide passage.
The slurry spraying passage is formed in a straight line;
Wherein the slurry spraying member is installed such that an opening surface of a lower end of the slurry spray path is upwardly inclined along a direction away from an end of the support arm with respect to an upper surface of the polishing pad.
The slurry spraying passage is formed in a straight line;
The slurry spraying member is rotated clockwise in a state of being parallel to the upper surface of the polishing pad, assuming that the slurry spraying member looks at the support arm toward the center of the polishing pad from the outside of the polishing pad, Wherein the chemical mechanical polishing apparatus comprises:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020160018430A KR101613462B1 (en) | 2016-02-17 | 2016-02-17 | Apparatus for Chemical-Mechanical Polishing of Wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020160018430A KR101613462B1 (en) | 2016-02-17 | 2016-02-17 | Apparatus for Chemical-Mechanical Polishing of Wafer |
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KR101613462B1 true KR101613462B1 (en) | 2016-04-19 |
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KR1020160018430A KR101613462B1 (en) | 2016-02-17 | 2016-02-17 | Apparatus for Chemical-Mechanical Polishing of Wafer |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109414801A (en) * | 2016-06-24 | 2019-03-01 | 应用材料公司 | Slurry distribution apparatus for chemically mechanical polishing |
CN113675113A (en) * | 2021-08-20 | 2021-11-19 | 华海清科股份有限公司 | Horizontal wafer cleaning device and cleaning method |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200267181Y1 (en) * | 2001-11-29 | 2002-03-09 | 동부전자 주식회사 | Chemical-mechanical polisher |
-
2016
- 2016-02-17 KR KR1020160018430A patent/KR101613462B1/en active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR200267181Y1 (en) * | 2001-11-29 | 2002-03-09 | 동부전자 주식회사 | Chemical-mechanical polisher |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109414801A (en) * | 2016-06-24 | 2019-03-01 | 应用材料公司 | Slurry distribution apparatus for chemically mechanical polishing |
US11077536B2 (en) | 2016-06-24 | 2021-08-03 | Applied Materials, Inc. | Slurry distribution device for chemical mechanical polishing |
CN109414801B (en) * | 2016-06-24 | 2021-09-03 | 应用材料公司 | Slurry distribution apparatus for chemical mechanical polishing |
CN113675113A (en) * | 2021-08-20 | 2021-11-19 | 华海清科股份有限公司 | Horizontal wafer cleaning device and cleaning method |
CN113675113B (en) * | 2021-08-20 | 2024-04-05 | 华海清科股份有限公司 | Wafer horizontal cleaning device and cleaning method |
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