KR101602025B1 - Adhesive film and tape for semiconductor wafer processing - Google Patents

Adhesive film and tape for semiconductor wafer processing Download PDF

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KR101602025B1
KR101602025B1 KR1020137012090A KR20137012090A KR101602025B1 KR 101602025 B1 KR101602025 B1 KR 101602025B1 KR 1020137012090 A KR1020137012090 A KR 1020137012090A KR 20137012090 A KR20137012090 A KR 20137012090A KR 101602025 B1 KR101602025 B1 KR 101602025B1
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adhesive layer
pressure
film
sensitive adhesive
adhesive film
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KR1020137012090A
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Korean (ko)
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KR20130106404A (en
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마사미 아오야마
신이치 이시와타
야스마사 모리시마
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후루카와 덴키 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있는 점착 필름 및 반도체 웨이퍼 가공용 테이프를 제공한다. 본 발명의 점착 필름은, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름이며, 투습도가 10.0g/㎡/day 이하이다. 또한, 본 발명의 반도체 웨이퍼 가공용 테이프는, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 점착제층 상에 형성된 접착제층을 갖는 웨이퍼 가공용 테이프이며, 점착 필름의 투습도가 10.0g/㎡/day 이하이다.An adhesive film and a semiconductor wafer processing tape capable of suppressing softening of an adhesive layer by absorbing moisture in the air to suppress the occurrence of a pick-up mist. The pressure-sensitive adhesive film of the present invention is a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer formed on the base film, and has a moisture permeability of 10.0 g / m 2 / day or less. Further, the semiconductor wafer processing tape of the present invention is a wafer processing tape having an adhesive film comprising a base film and a pressure-sensitive adhesive layer formed on the base film and an adhesive layer formed on the pressure-sensitive adhesive layer, wherein the pressure- g / m 2 / day or less.

Description

점착 필름 및 반도체 웨이퍼 가공용 테이프{ADHESIVE FILM AND TAPE FOR SEMICONDUCTOR WAFER PROCESSING}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an adhesive film,

본 발명은, 반도체 웨이퍼를 반도체 칩으로 절단하여, 반도체 장치를 제조하기 위해서 사용하는 점착 필름 및 반도체 웨이퍼 가공용 테이프에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film and a semiconductor wafer processing tape used for manufacturing a semiconductor device by cutting a semiconductor wafer into semiconductor chips.

반도체 장치의 제조 공정에 사용되는 반도체 웨이퍼 가공용 테이프로서, 점착 필름(다이싱 테이프)에, 접착제층(다이 본딩 필름)이 적층된 구조를 갖는 반도체 웨이퍼 가공용 테이프가 제안되어(예를 들어, 특허문헌 1 참조), 이미 실용화되어 있다.A semiconductor wafer processing tape having a structure in which an adhesive layer (die bonding film) is laminated on an adhesive film (dicing tape) is proposed as a semiconductor wafer processing tape used in a manufacturing process of a semiconductor device (for example, 1), which have already been put to practical use.

반도체 장치의 제조 공정에서는, 반도체 웨이퍼에 반도체 웨이퍼 가공용 테이프를 부착한 후, 반도체 웨이퍼를 다이싱 블레이드를 사용하여 칩 단위로 절단(다이싱)하는 공정, 반도체 웨이퍼 가공용 테이프를 익스팬드하는 공정, 또한 절단된 칩을 접착제층과 함께 점착제층으로부터 픽업하는 공정, 칩에 부착된 접착제층을 개재하여 칩을 기판 등에 실장하는 공정이 실시된다.In the manufacturing process of a semiconductor device, a process of attaching a semiconductor wafer processing tape to a semiconductor wafer and then cutting (dicing) the semiconductor wafer into chip units by using a dicing blade, a process of expanding a semiconductor wafer processing tape, A step of picking up the cut chips from the pressure-sensitive adhesive layer together with the adhesive layer, and a step of mounting the chips on a substrate or the like via an adhesive layer adhered to the chips.

일본 특허 공개 평02-32181호 공보Japanese Patent Application Laid-Open No. 02-32181

그러나, 상기 특허문헌 1에 기재된 반도체 웨이퍼 가공용 테이프에서는, 수송 중이나 보관 중에 접착제층이 공기 중의 수분을 흡수하여 부드러워져, 절삭성이 저하되는 경우가 있었다.However, in the semiconductor wafer processing tape described in Patent Document 1, the adhesive layer absorbs moisture in the air during transportation and storage, and is softened, so that cutting performance is sometimes deteriorated.

이와 같은 경우에는, 다이싱 시에, 수염 형상의 절삭칩이 발생하고, 이들 절삭칩이 기재 필름이나 점착제층의 절삭칩과 함께 다이싱되어 인접하는 칩간에서 융착하여, 픽업 시에, 픽업하고자 하는 칩에 인접하는 칩이 부수되어 픽업되어버리는 픽업 미스(더블 다이)가 발생한다고 하는 문제가 있었다.In such a case, during the dicing, beard-shaped cutting chips are generated, and these cutting chips are diced together with the cutting chips of the base film or the pressure-sensitive adhesive layer and fused between adjacent chips, There is a problem that a pick-up mist (double die) in which chips adjacent to the chip are attached and picked up is generated.

따라서, 본 발명의 목적은, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있는 점착 필름 및 반도체 웨이퍼 가공용 테이프를 제공하는 것에 있다.Accordingly, an object of the present invention is to provide a pressure-sensitive adhesive film and a tape for processing semiconductor wafers which can suppress the softening of the adhesive layer by absorbing moisture in the air to suppress the occurrence of pickup errors.

상기 과제를 해결하기 위해서, 본 발명의 점착 필름은, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름이며, 투습도가 10.0g/㎡/day 이하인 것을 특징으로 한다.In order to solve the above problems, the adhesive film of the present invention is a pressure-sensitive adhesive film comprising a base film and a pressure-sensitive adhesive layer formed on the base film, and has a moisture permeability of 10.0 g / m 2 / day or less.

또한, 본 발명의 반도체 웨이퍼 가공용 테이프는, 기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 상기 점착제층 상에 형성된 접착제층을 갖는 웨이퍼 가공용 테이프이며, 상기 점착 필름의 투습도가 10.0g/㎡/day 이하인 것을 특징으로 한다.A semiconductor wafer processing tape according to the present invention is a wafer processing tape having an adhesive film comprising a base film and a pressure sensitive adhesive layer formed on the base film and an adhesive layer formed on the pressure sensitive adhesive layer, Is not more than 10.0 g / m 2 / day.

또한, 상기 반도체 웨이퍼 가공용 테이프에 있어서, 상기 점착 필름과 상기 접착제층을 합한 흡수율이 2.0체적％ 이하인 것이 바람직하다.In the above-mentioned semiconductor wafer processing tape, it is preferable that the water absorption rate of the adhesive film and the adhesive layer is 2.0% by volume or less.

본 발명의 점착 필름 및 반도체 웨이퍼 가공용 테이프는, 점착 필름에 접착제층이 접합되어 수송ㆍ보관된 경우에, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있다.INDUSTRIAL APPLICABILITY The adhesive film and the semiconductor wafer processing tape of the present invention can suppress the softening of the adhesive layer by absorbing moisture in the air when the adhesive layer is bonded to the adhesive film and transported and stored, .

도 1은 본 발명의 반도체 웨이퍼 가공용 테이프의 일례를 도시하는 단면도이다.
도 2의 (a)는 반도체 웨이퍼 가공용 테이프에, 반도체 웨이퍼(W)와 링 프레임이 접합된 상태를 도시하는 단면도이고, (b)는 다이싱 후의 반도체 웨이퍼 가공용 테이프와 반도체 웨이퍼를 도시하는 단면도이며, (c)는 익스팬드 후의 반도체 웨이퍼 가공용 테이프와 반도체 웨이퍼를 도시하는 단면도이다.1 is a cross-sectional view showing an example of a semiconductor wafer processing tape according to the present invention.
2 (a) is a cross-sectional view showing a state in which a semiconductor wafer W and a ring frame are bonded to a semiconductor wafer processing tape, (b) is a cross-sectional view showing a semiconductor wafer processing tape after dicing and a semiconductor wafer , (c) are sectional views showing a semiconductor wafer processing tape and a semiconductor wafer after expansion.

이하에 본 발명의 실시 형태를 도면에 기초하여 상세하게 설명한다.BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

본 실시 형태에 관한 반도체 웨이퍼 가공용 테이프(15)는, 도 1에 도시한 바와 같이, 기재 필름(11) 상에 점착제층(12)이 적층된 점착 필름(14)을 갖고, 점착제층(12) 상에 접착제층(13)이 적층된 다이싱ㆍ다이 본딩 필름이다. 또한, 점착제층(12) 및 접착제층(13)은, 사용 공정이나 장치에 맞추어 미리 소정 형상으로 절단(프리컷)되어 있어도 된다. 웨이퍼(W)(도 2의 (a) 참조)에 따라서 프리컷된 접착제층(13)을 적층한 경우, 웨이퍼(W)가 접합되는 부분에는 접착제층(13)이 있고, 다이싱용의 링 프레임(20)(도 2의 (a) 참조)이 접합되는 부분에는 접착제층(13)이 없고 점착제층(12)만이 존재하게 된다. 일반적으로, 접착제층(13)은 피착체와 박리되기 어렵기 때문에, 프리컷된 접착제층(13)을 사용함으로써, 링 프레임(20)은 점착제층(12)에 접합할 수 있어, 사용 후의 링 프레임(20)에의 접착제 잔여물이 발생하기 어렵다고 하는 효과가 얻어진다. 또한, 본 발명의 반도체 웨이퍼 가공용 테이프(15)는, 웨이퍼 1장분마다 절단되어 적층된 형태와, 이것이 복수 형성된 긴 시트를 롤 형상으로 권취한 형태를 포함한다. 이하에, 기재 필름(11), 점착제층(12) 및 접착제층(13)에 대하여 각각 상세하게 설명한다.1, the semiconductor wafer processing tape 15 according to the present embodiment has an adhesive film 14 in which a pressure-sensitive adhesive layer 12 is laminated on a base film 11, and a pressure- Die bonding film in which an adhesive layer 13 is laminated on a substrate. Further, the pressure-sensitive adhesive layer 12 and the adhesive layer 13 may be cut (pre-cut) into a predetermined shape in advance in accordance with the use process or apparatus. When the pre-cut adhesive layer 13 is laminated in accordance with the wafer W (see Fig. 2A), the adhesive layer 13 is present at a portion where the wafer W is bonded, There is no adhesive layer 13 and only the pressure-sensitive adhesive layer 12 is present at a portion where the adhesive layer 20 (see FIG. 2A) is bonded. Generally, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using the pre-cut adhesive layer 13, An effect that the adhesive residue on the frame 20 hardly occurs is obtained. Further, the semiconductor wafer processing tape 15 of the present invention includes a form in which the wafer is cut and laminated every one wafer, and a form in which a plurality of long sheets formed of the same are wound in a roll form. Hereinafter, the base film 11, the pressure-sensitive adhesive layer 12 and the adhesive layer 13 will be described in detail.

<기재 필름> <Base film>

기재 필름을 구성하는 재료로서는, 특별히 한정되지 않지만, 폴리올레핀 및 폴리염화비닐로부터 선택되는 것이 바람직하다.The material constituting the base film is not particularly limited, but is preferably selected from polyolefin and polyvinyl chloride.

상기 폴리올레핀으로서는, 폴리에틸렌, 폴리프로필렌, 에틸렌-프로필렌 공중합체, 폴리부텐-1, 폴리-4-메틸펜텐-1, 에틸렌-아세트산비닐 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체, 에틸렌-아크릴산 공중합체, 아이오노머 등의 α-올레핀의 단독 중합체 또는 공중합체 혹은 이들의 혼합물 등을 들 수 있다.Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, Homopolymers or copolymers of? -Olefins such as ethylene-acrylic acid copolymers and ionomers, or mixtures thereof.

후술하는 점착제층으로서 방사선 조사에 의해 경화되어, 점착력이 저하되는 타입을 사용하는 경우에는, 기재 필름은 방사선 투과성인 것이 바람직하다. 기재 필름의 두께는, 강도 및 칩의 픽업성 확보의 관점에서, 50 내지 300㎛인 것이 바람직하다. 또한, 기재 필름은 단층이어도, 복수층으로 구성되어 있어도 된다.When a pressure sensitive adhesive layer to be described below is cured by irradiation with radiation and the adhesive force is lowered, it is preferable that the base film is radiation-transmissive. The thickness of the base film is preferably 50 to 300 占 퐉 from the viewpoints of strength and securing pickupability of chips. The base film may be a single layer or a plurality of layers.

<점착제층> <Pressure-sensitive adhesive layer>

점착제층은, 기재 필름 상에 점착제를 도포 시공하여 제조할 수 있다. 점착제층으로서는 특별히 제한은 없고, 익스팬드 시에 접착제층 및 반도체 웨이퍼가 박리되거나 하지 않을 정도의 유지성이나, 픽업 시에는 접착제층과 박리가 용이하게 되는 특성을 갖는 것이면 된다. 픽업성을 향상시키기 위해서, 점착제층은 방사선 경화성의 것이 바람직하다.The pressure-sensitive adhesive layer can be produced by applying a pressure-sensitive adhesive on a base film. The pressure-sensitive adhesive layer is not particularly limited, and may be any material that has such a property that the adhesive layer and the semiconductor wafer are not peeled off or not at the time of expansion, and that the adhesive layer is easily peeled off during pickup. In order to improve the pick-up property, the pressure-sensitive adhesive layer is preferably radiation-curable.

예를 들어, 점착제에 사용되는 공지의 염소화 폴리프로필렌 수지, 아크릴 수지, 폴리에스테르 수지, 폴리우레탄 수지, 에폭시 수지, 부가 반응형 오르가노폴리실록산계 수지, 실리콘 아크릴레이트 수지, 에틸렌-아세트산비닐 공중합체, 에틸렌-아크릴산에틸 공중합체, 에틸렌-아크릴산메틸 공중합체, 에틸렌-아크릴산 공중합체, 폴리이소프렌이나 스티렌ㆍ부타디엔 공중합체나 그의 수소 첨가물 등의 각종 엘라스토머 등이나 그의 혼합물에, 방사선 중합성 화합물을 적절히 배합하여 점착제를 제조하는 것이 바람직하다. 또한, 각종 계면 활성제나 표면 평활화제를 첨가해도 된다. 점착제층의 두께는 특별히 한정되는 것은 아니며 적절하게 설정해도 되지만, 1 내지 30㎛가 바람직하다.For example, a known chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, an epoxy resin, an addition reaction type organopolysiloxane resin, a silicone acrylate resin, an ethylene-vinyl acetate copolymer, A radiation-polymerizable compound is appropriately compounded in various elastomers such as ethylene-ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene-butadiene copolymer and hydrogenated product thereof, It is preferable to produce a pressure-sensitive adhesive. In addition, various surfactants and surface smoothing agents may be added. The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but it is preferably 1 to 30 占 퐉.

중합성 화합물은, 예를 들어 광 조사에 의해 3차원 망상화할 수 있는 분자 내에 광중합성 탄소-탄소 이중 결합을 적어도 2개 이상 갖는 저분자량 화합물이나, 광중합성 탄소-탄소 이중 결합기를 치환기에 갖는 중합체나 올리고머가 사용된다. 구체적으로는, 트리메틸올프로판 트리아크릴레이트, 펜타에리트리톨 트리아크릴레이트, 펜타에리트리톨 테트라아크릴레이트, 디펜타에리트리톨 모노히드록시펜타아크릴레이트, 디펜타에리트리톨 헥사아크릴레이트, 1,4-부틸렌글리콜 디아크릴레이트, 1,6-헥산디올 디아크릴레이트, 폴리에틸렌글리콜 디아크릴레이트나, 올리고에스테르 아크릴레이트 등, 실리콘 아크릴레이트 등, 아크릴산이나 각종 아크릴산에스테르류의 공중합체 등이 적용 가능하다.The polymerizable compound is, for example, a low molecular weight compound having at least two photochemically synthesized carbon-carbon double bonds in molecules capable of three-dimensionally retreating by light irradiation, a polymer having a photocrosslinking carbon- Or oligomers are used. Specific examples include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Acrylic acid and various acrylic acid esters such as polyethylene glycol diacrylate, glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate and the like, silicone acrylate, and the like.

또한, 상기와 같은 아크릴레이트계 화합물 외에, 우레탄 아크릴레이트계 올리고머를 사용할 수도 있다. 우레탄 아크릴레이트계 올리고머는, 폴리에스테르형 또는 폴리에테르형 등의 폴리올 화합물과, 다가 이소시아네이트 화합물(예를 들어, 2,4-톨릴렌 디이소시아네이트, 2,6-톨릴렌 디이소시아네이트, 1,3-크실릴렌 디이소시아네이트, 1,4-크실릴렌 디이소시아네이트, 디페닐메탄-4,4-디이소시아네이트 등)을 반응시켜 얻어지는 말단 이소시아네이트 우레탄 예비중합체에, 히드록실기를 갖는 아크릴레이트 혹은 메타크릴레이트(예를 들어, 2-히드록시에틸 아크릴레이트, 2-히드록시에틸 메타크릴레이트, 2-히드록시프로필 아크릴레이트, 2-히드록시프로필 메타크릴레이트, 폴리에틸렌글리콜 아크릴레이트, 폴리에틸렌글리콜 메타크릴레이트 등)를 반응시켜 얻어진다.In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is obtained by reacting a polyol compound such as polyester type or polyether type with a polyisocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3- Xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4, 4-diisocyanate, etc.) is reacted with a terminal isocyanate urethane prepolymer obtained by reacting an acrylate or methacrylate having a hydroxyl group (For example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate ).

또한, 점착제층에는, 상기의 수지로부터 선택되는 2종 이상이 혼합된 것이어도 된다. 또한, 이상에 든 점착제의 재료는, 표면 자유 에너지를 40mJ/㎡ 이하로 하는 데 있어서, 트리플루오로메틸기, 디메틸실릴기, 장쇄 알킬기 등의 무극성기를 가능한 한 많이 분자 구조 중에 포함하는 것이 바람직하다.The pressure-sensitive adhesive layer may be a mixture of two or more kinds selected from the above-mentioned resins. In the above-mentioned pressure-sensitive adhesive material, it is preferable that the non-polar groups such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group are included in the molecular structure as much as possible in making the surface free energy to 40 mJ / m 2 or less.

또한, 점착제층의 수지에는, 방사선을 기재 필름에 조사하여 점착제층을 경화시키는 방사선 중합성 화합물 외에, 아크릴계 점착제, 광중합 개시제, 경화제 등을 적절히 배합하여 점착제를 제조할 수도 있다.The pressure-sensitive adhesive layer may also be produced by appropriately blending an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent and the like in addition to the radiation-polymerizable compound for curing the pressure-sensitive adhesive layer by irradiating the base film with radiation.

광중합 개시제를 사용하는 경우, 예를 들어 이소프로필벤조인에테르, 이소부틸벤조인에테르, 벤조페논, 미힐러케톤, 클로로티오크산톤, 도데실티오크산톤, 디메틸티오크산톤, 디에틸티오크산톤, 벤질디메틸케탈, α-히드록시시클로헥실페닐케톤, 2-히드록시메틸페닐프로판 등을 사용할 수 있다. 이들 광중합 개시제의 배합량은 아크릴계 공중합체 100질량부에 대하여 0.01 내지 30질량부가 바람직하고, 1 내지 10중량부가 보다 바람직하다.When a photopolymerization initiator is used, for example, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, Benzyl dimethyl ketal,? -Hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane and the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 30 parts by mass, more preferably 1 to 10 parts by mass with respect to 100 parts by mass of the acrylic copolymer.

또한, 점착제 중에 저분자 성분이 존재하고 있으면, 기재 필름 제조 후에 장기 보관하고 있는 동안에 저분자 성분이 점착제층 표면으로 이행하여 점접착 특성을 손상시킬 우려가 있기 때문에, 겔 분율이 높은 것이 바람직하고, 통상 60％ 이상, 바람직하게는 70％ 이상이다. 여기서, 겔 분율이란, 이하와 같이 산출되는 것을 말한다. 점착제층 약 0.05g을 칭량하여 취하고, 크실렌 50㎖에 120℃에서 24시간 침지한 후, 200메쉬의 스테인리스제 금속망으로 여과하고, 금속망 상의 불용해분을 110℃에서 120분간 건조한다. 이어서, 건조한 불용해분의 질량을 칭량하고, 하기에 나타내는 수학식 1에 의해 겔 분율을 산출한다.If a low-molecular component is present in the pressure-sensitive adhesive, the low molecular component may migrate to the surface of the pressure-sensitive adhesive layer during long-term storage after the production of the base film, thereby deteriorating the adhesive property. Or more, and preferably 70% or more. Here, the gel fraction refers to that calculated as follows. About 0.05 g of the pressure-sensitive adhesive layer was weighed and immersed in 50 ml of xylene at 120 DEG C for 24 hours, then filtered through a 200 mesh stainless steel metal mesh, and insoluble fractions on the metal mesh were dried at 110 DEG C for 120 minutes. Then, the mass of the dried insoluble component is weighed, and the gel fraction is calculated by the following equation (1).

Figure 112013041279843-pct00001
Figure 112013041279843-pct00001

점착 필름의 투습도는 10.0g/㎡/day 이하이다. 이와 같이, 점착 필름의 투습도를 10.0g/㎡/day 이하로 함으로써, 반도체 웨이퍼 가공용 테이프가 웨이퍼 1장분마다 절단되어 적층된 상태 혹은 긴 시트를 롤 형상으로 권취한 상태로 한창 수송ㆍ보관되는 중에 공기 중의 수증기가 외측으로부터 내측으로 투과하기 어려워지기 때문에, 접착제층에 도달하는 수분량이 감소하여 접착제층의 연화가 저감된다. 이 때문에, 다이싱 시의 수염 형상의 절삭칩의 발생이 저감되어, 이들 절삭칩이 기재 필름이나 점착제층의 절삭칩과 함께 다이싱되어 인접하는 칩간에서 융착하여, 픽업 시에 픽업 미스가 발생하는 것을 억제할 수 있다.The moisture permeability of the adhesive film is 10.0 g / m &lt; 2 &gt; / day or less. By setting the moisture permeability of the pressure-sensitive adhesive film to 10.0 g / m &lt; 2 &gt; / day or less, the semiconductor wafer processing tape is cut and stacked for each wafer, or in a state in which the long sheet is wound in a roll- The amount of water reaching the adhesive layer is reduced and the softening of the adhesive layer is reduced. As a result, the generation of cutting chips in the shape of a beard at the time of dicing is reduced, and these cutting chips are diced together with the cutting chips of the base film and the pressure-sensitive adhesive layer and fused between adjacent chips, Can be suppressed.

점착 필름의 투습도를 저하시키기 위해서는, 기재 필름에 사용하는 중합체로서, 폴리에틸렌, 폴리프로필렌, 폴리에틸렌나프탈레이트 등 투습도가 낮은 중합체를 사용하면 된다. 또한, 기재 필름의 두께를 크게 함으로써, 점착 필름의 투습도를 저하시킬 수도 있다. 또한, 점착 필름의 투습도를 저하시키기 위해서는, 점착제층의 두께를 두껍게 하면 된다. 또한, 점착제층의 가교 밀도를 올림으로써 투습도를 저하시킬 수도 있다. 가교 밀도를 내리기 위해서는, 경화제량을 증가시키거나 또는 점착제층에 수산기가 많은 중합체를 사용하면 된다.In order to lower the moisture permeability of the adhesive film, a polymer having low moisture permeability such as polyethylene, polypropylene, or polyethylene naphthalate may be used as the polymer used for the base film. Further, by increasing the thickness of the base film, the moisture permeability of the pressure-sensitive adhesive film may be lowered. Further, in order to lower the moisture permeability of the pressure-sensitive adhesive film, the thickness of the pressure-sensitive adhesive layer may be increased. In addition, the crosslinking density of the pressure-sensitive adhesive layer may be increased to lower the moisture permeability. In order to lower the crosslinking density, the amount of the curing agent may be increased or a polymer having a large number of hydroxyl groups in the pressure-sensitive adhesive layer may be used.

<접착제층> <Adhesive Layer>

접착제층은, 반도체 웨이퍼가 접합되어 절단된 후 칩을 픽업할 때에, 절단된 접착제층이 점착제층으로부터 박리되어 칩에 부착되어 있어, 칩을 패키지 기판이나 리드 프레임에 고정할 때의 본딩 필름으로서 기능하는 것이다.The adhesive layer is peeled off from the pressure-sensitive adhesive layer and adhered to the chip when the semiconductor wafer is cut after the semiconductor wafer is bonded and cut, so that the adhesive layer functions as a bonding film for fixing the chip to the package substrate or the lead frame .

접착제층은 접착제를 미리 필름화한 것이며, 예를 들어 접착제에 사용되는 공지의 폴리이미드 수지, 폴리아미드 수지, 폴리에테르이미드 수지, 폴리아미드이미드 수지, 폴리에스테르 수지, 폴리에스테르이미드 수지, 페녹시 수지, 폴리술폰 수지, 폴리에테르술폰 수지, 폴리페닐렌술피드 수지, 폴리에테르케톤 수지, 염소화 폴리프로필렌 수지, 아크릴 수지, 폴리우레탄 수지, 에폭시 수지, 폴리아크릴아미드 수지, 멜라민 수지 등이나 그의 혼합물을 사용할 수 있지만, 접착제층(13)의 분단성을 양호하게 하기 위해서는, 아크릴계 공중합체, 에폭시 수지를 포함하고, 아크릴계 공중합체의 Tg가 10℃ 이상인 것이 바람직하다. 또한, 무기 필러를 50％ 이상 함유하는 것이 바람직하다. 또한, 칩이나 리드 프레임에 대한 접착력을 강화하기 위해서, 실란 커플링제 혹은 티타늄 커플링제를 첨가제로서 상기 재료나 그의 혼합물에 첨가하는 것이 바람직하다. 접착제층의 두께는 특별히 제한되는 것은 아니지만, 통상 5 내지 100㎛ 정도가 바람직하다.The adhesive layer is a film obtained by preliminarily bonding an adhesive, and examples thereof include known polyimide resins used for adhesives, polyamide resins, polyetherimide resins, polyamideimide resins, polyester resins, polyesterimide resins, , Polyethersulfone resin, polyethersulfone resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polyacrylamide resin, melamine resin, However, in order to improve the separation property of the adhesive layer 13, it is preferable that the Tg of the acrylic copolymer is 10 ° C or higher, including an acrylic copolymer and an epoxy resin. The inorganic filler is preferably contained in an amount of 50% or more. It is also preferable to add a silane coupling agent or a titanium coupling agent to the material or a mixture thereof as an additive in order to enhance adhesion to a chip or a lead frame. The thickness of the adhesive layer is not particularly limited, but is preferably about 5 to 100 mu m.

에폭시 수지는 경화되어 접착 작용을 나타내는 것이면 특별히 제한은 없지만, 2관능기 이상이며, 바람직하게는 분자량이 5000 미만, 보다 바람직하게는 3000 미만인 에폭시 수지를 사용할 수 있다. 또한, 바람직하게는 분자량이 500 이상, 보다 바람직하게는 800 이상인 에폭시 수지를 사용할 수 있다.The epoxy resin is not particularly limited as long as it is cured to exhibit an adhesive function, but an epoxy resin having two or more functional groups and preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. An epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more may be used.

예를 들어, 비스페놀 A형 에폭시 수지, 비스페놀 F형 에폭시 수지, 비스페놀 S형 에폭시 수지, 지환식 에폭시 수지, 지방족 쇄상 에폭시 수지, 페놀 노볼락형 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 비스페놀 A 노볼락형 에폭시 수지, 비페놀의 디글리시딜 에테르화물, 나프탈렌디올의 디글리시딜 에테르화물, 페놀류의 디글리시딜 에테르화물, 알코올류의 디글리시딜 에테르화물 및 이들의 알킬 치환체, 할로겐화물, 수소 첨가물 등의 2관능 에폭시 수지, 노볼락형 에폭시 수지를 들 수 있다. 또한, 다관능 에폭시 수지나 복소환 함유 에폭시 수지 등, 일반적으로 알려져 있는 것을 적용할 수도 있다. 이들은 단독으로 또는 2종류 이상을 조합하여 사용할 수 있다. 또한, 특성을 손상시키지 않는 범위에서 에폭시 수지 이외의 성분이 불순물로서 포함되어 있어도 된다.Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, Type epoxy resins, diglycidyl ether compounds of biphenol, diglycidyl ether compounds of naphthalene diol, diglycidyl ether compounds of phenols, diglycidyl ether compounds of alcohols and alkyl substituents thereof, halides , Bifunctional epoxy resins such as hydrogenated products, and novolak-type epoxy resins. Further, generally known ones such as polyfunctional epoxy resins and heterocyclic ring-containing epoxy resins may be applied. These may be used alone or in combination of two or more. In addition, components other than the epoxy resin may be contained as impurities within a range that does not impair the characteristics.

아크릴계 공중합체로서는, 예를 들어 에폭시기 함유 아크릴 공중합체를 사용할 수 있다. 에폭시기 함유 아크릴 공중합체는 에폭시기를 갖는 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트를 0.5 내지 6중량％ 포함한다. 높은 접착력을 얻기 위해서는, 0.5중량％ 이상이 바람직하고, 6중량％ 이하이면 겔화를 억제할 수 있다.As the acrylic copolymer, for example, an epoxy group-containing acrylic copolymer can be used. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, it is preferably 0.5% by weight or more, and when it is 6% by weight or less, gelation can be suppressed.

관능기 단량체로서 사용하는 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트의 양은 0.5 내지 6중량％의 공중합체비이다. 즉, 본 발명에 있어서 에폭시기 함유 아크릴 공중합체는, 원료로서 글리시딜아크릴레이트 또는 글리시딜메타크릴레이트를, 얻어지는 공중합체에 대하여 0.5 내지 6중량％로 되는 양을 사용하여 얻어진 공중합체를 말한다. 그 잔량부는 메틸아크릴레이트, 메틸메타크릴레이트 등의 탄소수 1 내지 8의 알킬기를 갖는 알킬아크릴레이트, 알킬메타크릴레이트 및 스티렌이나 아크릴로니트릴 등의 혼합물을 사용할 수 있다. 이들 중에서도 에틸(메트)아크릴레이트 및/또는 부틸(메트)아크릴레이트가 특히 바람직하다. 혼합 비율은, 공중합체의 Tg를 고려하여 조정하는 것이 바람직하다. 중합 방법은 특별히 제한이 없고, 예를 들어, 펄 중합, 용액 중합 등을 들 수 있고, 이들 방법에 의해 공중합체가 얻어진다. 에폭시기 함유 아크릴 공중합체의 중량 평균 분자량은 10만 이상이며, 이 범위이면 접착성 및 내열성이 높고, 30만 내지 300만인 것이 바람직하고, 50만 내지 200만인 것이 보다 바람직하다. 300만 이하이면, 플로우성이 저하됨으로써, 반도체 소자를 부착하는 지지 부재에 필요에 따라서 형성된 배선 회로에의 충전성이 저하될 가능성을 저감시킬 수 있다.The amount of glycidyl acrylate or glycidyl methacrylate used as the functional monomer is from 0.5 to 6% by weight of the copolymer. That is, in the present invention, the epoxy group-containing acrylic copolymer refers to a copolymer obtained by using glycidyl acrylate or glycidyl methacrylate as a raw material in an amount of 0.5 to 6% by weight based on the copolymer to be obtained . The remaining portion may be an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate and methyl methacrylate, an alkyl methacrylate, and a mixture of styrene and acrylonitrile. Of these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferred. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. The polymerization method is not particularly limited and includes, for example, pearl polymerization, solution polymerization and the like, and a copolymer is obtained by these methods. The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more. If it is within this range, the adhesiveness and heat resistance are high, preferably 300,000 to 3,000,000, and more preferably 500,000 to 2,000,000. If the number is less than 3 million, the flow property is lowered, and the possibility that the filling property of the wiring circuit formed as needed in the supporting member for attaching the semiconductor element is lowered can be reduced.

또한, 중량 평균 분자량은 겔 투과 크로마토그래피법(GPC)에 의해 표준 폴리스티렌에 의한 검량선을 사용한 폴리스티렌 환산값이다.The weight average molecular weight is a polystyrene reduced value using a calibration curve of standard polystyrene by gel permeation chromatography (GPC).

무기 필러로서는 특별히 제한이 없고, 예를 들어, 수산화알루미늄, 수산화마그네슘, 탄산칼슘, 탄산마그네슘, 규산칼슘, 규산마그네슘, 산화칼슘, 산화마그네슘, 산화알루미늄, 질화알루미늄, 붕산알루미늄 위스커, 질화붕소, 결정질 실리카, 비정질 실리카 등을 들 수 있다. 이들은 1종 또는 2종 이상을 병용할 수도 있다. 열전도성 향상을 위해서는, 산화알루미늄, 질화알루미늄, 질화붕소, 결정성 실리카, 비정질성 실리카 등이 바람직하다. 특성의 밸런스의 관점에서는 실리카가 바람직하다.The inorganic filler is not particularly limited and includes, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, Silica, and amorphous silica. These may be used alone or in combination of two or more. In order to improve the thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. From the viewpoint of balance of properties, silica is preferable.

필러의 평균 입경은 0.002 내지 2㎛인 것이 바람직하고, 0.008 내지 0.5㎛인 것이 보다 바람직하고, 0.01 내지 0.05㎛인 것이 더욱 바람직하다. 필러의 평균 입경이 0.002㎛ 미만이면 피착체에의 습윤성이 저하되어 접착성이 저하되는 경향이 있고, 2㎛를 초과하면 필러 첨가에 의한 보강 효과가 작아져 내열성이 저하되는 경향이 있다. 여기서, 평균 입경이란, TEM, SEM 등에 의해 측정한 필러 100개의 입경으로부터 구해지는 평균값을 말한다.The average particle diameter of the filler is preferably 0.002 to 2 mu m, more preferably 0.008 to 0.5 mu m, and even more preferably 0.01 to 0.05 mu m. If the average particle diameter of the filler is less than 0.002 탆, the wettability to the adherend is lowered and the adhesiveness tends to be lowered. If the average particle diameter exceeds 2 탆, the reinforcing effect by the addition of the filler tends to be lowered and the heat resistance tends to decrease. Here, the average particle diameter refers to an average value obtained from the particle diameters of 100 fillers measured by TEM, SEM or the like.

반도체 웨이퍼 가공용 테이프는, 점착제층과 접착제층 사이의 박리성을 좋게 하는 관점에서, 점착 필름과 접착제층을 합한 흡수율을 2.0체적％ 이하로 하는 것이 바람직하다. 종래, 픽업 시에, 점착제층과 접착제층 사이의 박리를 용이하게 하기 위해서, 웨이퍼 가공용 테이프의 하측으로부터 핀에 의해 반도체 칩을 밀어올리는 힘이나 밀어올림 높이를 크게 하는 것이 행해지고 있지만, 최근 반도체 칩이 얇아지는 경향이 있고, 반도체 칩이 얇은 경우에, 밀어올리는 힘을 크게 하면 칩이 파손되어 버린다고 하는 문제도 있었다. 점착 필름과 접착제층을 합한 흡수율이 2.0체적％ 이하이면, 접착제층이 연화되어 절삭 시에 점착제층과 함께 유착하거나, 점착 필름이 흡수한 수분이 접착제층으로 이행하여 양자가 유착하는 것을 저감시킬 수 있으므로, 점착제층과 접착제층 사이의 박리성이 좋아진다. 이 때문에, 핀에 의한 밀어올리는 힘을 크게 할 필요가 없기 때문에, 반도체 칩이 얇은 경우라도 양호하게 픽업할 수 있다.From the viewpoint of improving the peelability between the pressure-sensitive adhesive layer and the adhesive layer, it is preferable that the total absorption rate of the pressure-sensitive adhesive film and the adhesive layer is 2.0% by volume or less. Conventionally, in order to facilitate peeling between the pressure-sensitive adhesive layer and the adhesive layer at the time of pick-up, the force for pushing up the semiconductor chip by the pins from the lower side of the wafer for processing tape and the push-up height have been increased. There is a problem that when the semiconductor chip is thin, the chip is broken if the push-up force is increased. When the water absorption ratio of the adhesive film and the adhesive layer is 2.0% by volume or less, the adhesive layer is softened to adhere together with the adhesive layer at the time of cutting, or the moisture absorbed by the adhesive film migrates to the adhesive layer, Therefore, the peelability between the pressure-sensitive adhesive layer and the adhesive layer is improved. Therefore, it is not necessary to increase the push-up force by the pin, so that even if the semiconductor chip is thin, it can be picked up satisfactorily.

점착 필름과 접착제층을 합한 흡수율을 저하시키기 위해서는, 기재 필름에 사용하는 중합체로서 폴리프로필렌, 폴리에틸렌 등 흡수율이 낮은 중합체를 사용하면 된다. 또한, 기재 필름의 두께를 작게 함으로써 흡수율을 저하시킬 수도 있다. 또한, 점착제층은 히드록시기, 아미노기, 술포기, 카르복실기 등의 관능기나 아미드 결합, 에테르 결합 부분을 적게 하고, 메틸기나 아릴기의 도입량을 증가시킴으로써 흡수율을 저하시킬 수 있다. 또한, 접착제층에 아크릴 등 흡수율이 낮은 중합체를 사용함으로써 흡수율을 저하시킬 수도 있다. 또한, 접착제층에 사용하는 에폭시나 페놀 등에 대하여, 분자량이 낮은 것을 사용함으로써 흡수율을 저하시킬 수도 있다. 또한, 접착제층에 포함되는 무기 필러의 양을 저감함으로써도 흡수율을 저하시킬 수도 있다.In order to lower the water absorption rate of the adhesive film and the adhesive layer, a polymer having a low water absorption rate such as polypropylene or polyethylene may be used as the polymer used for the base film. In addition, the absorption rate may be lowered by reducing the thickness of the base film. In addition, the pressure-sensitive adhesive layer can lower the absorptivity by reducing the functional groups such as a hydroxyl group, an amino group, a sulfo group, and a carboxyl group, amide bond and ether bond moieties, and increasing the introduction amount of a methyl group or an aryl group. The absorption rate may be lowered by using a polymer having a low water absorption rate such as acryl or the like in the adhesive layer. In addition, the absorption rate may be lowered by using a low molecular weight epoxy, phenol, or the like used for the adhesive layer. In addition, the absorption rate may be lowered by reducing the amount of the inorganic filler contained in the adhesive layer.

이어서, 도 1에 도시한 본 발명의 반도체 웨이퍼 가공용 테이프(15)를 사용하여 접착제층을 구비한 반도체 칩을 제조하는 방법에 대하여, 도 2를 참조하면서 설명한다.Next, a method for manufacturing a semiconductor chip having an adhesive layer using the semiconductor wafer processing tape 15 of the present invention shown in Fig. 1 will be described with reference to Fig.

(접합 공정)(Bonding step)

우선, 도 2의 (a)에 도시한 바와 같이, 반도체 웨이퍼 가공용 테이프(15)의 접착제층(13)에 반도체 웨이퍼(W)의 이면을 접합함과 함께, 점착제층(12)의 소정 위치에 링 프레임(20)을 접합한다.2 (a), the back surface of the semiconductor wafer W is bonded to the adhesive layer 13 of the semiconductor wafer processing tape 15 and the adhesive layer 13 is bonded to a predetermined position of the pressure sensitive adhesive layer 12 The ring frame 20 is joined.

(다이싱 공정)(Dicing step)

흡착 스테이지(22)에 의해 웨이퍼 가공용 테이프(15)를 기재 필름(11)면측으로부터 흡착 지지하고, 도시하지 않은 블레이드를 사용하여 반도체 웨이퍼(W)를 기계적으로 절단하여, 복수의 반도체 칩(C)으로 분할한다(도 2의 (b)). 또한, 이때, 접착제층(13)이나 점착제층(12), 기재 필름(11)의 일부도 적절히 다이싱된다. 이때, 점착 필름의 투습도가 10.0g/㎡/day 이하이기 때문에, 반도체 웨이퍼 가공용 테이프의 수송ㆍ보관 중에 공기 중의 수증기가 외측으로부터 내측으로 투과하기 어려워 접착제층의 연화가 저감되어 있기 때문에, 수염 형상의 절삭칩의 발생이 저감된다.The wafer processing tape 15 is sucked and held from the side of the substrate film 11 by the suction stage 22 and the semiconductor wafer W is mechanically cut using a blade not shown to form a plurality of semiconductor chips C, (Fig. 2 (b)). At this time, the adhesive layer 13, the pressure-sensitive adhesive layer 12, and a part of the base film 11 are appropriately diced. Since the moisture permeability of the adhesive film is 10.0 g / m &lt; 2 &gt; / day or less, water vapor in the air during transportation and storage of the semiconductor wafer processing tape is less likely to permeate from the outside to the inside and softening of the adhesive layer is reduced. And generation of cutting chips is reduced.

(조사 공정) (Irradiation process)

그리고, 방사선을 기재 필름(11)의 하면으로부터 점착제층(12)에 조사하여 점착제층(12)을 경화시킨다. 경화시킨 점착제층(12)은 점착력이 저하되기 때문에, 점착제층(12) 상의 접착제층(13)을 박리시키는 것이 가능하게 된다. 또한, 점착제층을 복수의 층으로 구성하는 경우, 접착제층(13)을 점착제층(12)으로부터 박리하기 위해서 점착제층 전체를 경화시킬 필요는 없고, 적어도 웨이퍼에 대응하는 점착제층 부분을 경화시켜도 된다.Then, the pressure is applied to the pressure-sensitive adhesive layer 12 from the lower surface of the base film 11 to harden the pressure-sensitive adhesive layer 12. [ The adhesive layer 13 on the pressure-sensitive adhesive layer 12 can be peeled off because the cured pressure-sensitive adhesive layer 12 is deteriorated in adhesive strength. When the pressure-sensitive adhesive layer is composed of a plurality of layers, it is not necessary to cure the entire pressure-sensitive adhesive layer in order to peel the pressure-sensitive adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure- .

(익스팬드 공정) (Expand Process)

조사 공정 후, 분할된 복수의 반도체 칩(C)을 유지하는 반도체 웨이퍼 가공용 테이프(15)를 익스팬드 장치의 스테이지(21) 상에 적재한다. 그리고, 도 2의 (c)에 도시한 바와 같이, 중공 원기둥 형상의 밀어올림 부재(23)를 반도체 웨이퍼 가공용 테이프(15)의 하면측으로부터 상승시켜, 상기 점착 필름(14)을 링 프레임(20)의 직경 방향 및 둘레 방향으로 늘인다.After the irradiation process, the semiconductor wafer processing tape 15 holding a plurality of divided semiconductor chips C is stacked on the stage 21 of the expanding apparatus. 2C, the hollow cylinder-shaped push-up member 23 is lifted from the lower surface side of the semiconductor wafer processing tape 15, and the adhesive film 14 is lifted from the ring frame 20 In the radial direction and in the circumferential direction.

(픽업 공정)(Pickup process)

익스팬드 공정을 실시한 후, 점착 필름(14)을 익스팬드한 상태 그대로, 칩(C)을 픽업하는 픽업 공정을 실시한다. 구체적으로는, 점착 필름(14)의 하측으로부터 칩(C)을 핀(도시 생략)에 의해 밀어올림과 함께, 점착 필름(14)의 상면측으로부터 흡착 지그(도시 생략)로 칩(C)을 흡착함으로써, 개편화된 칩(C)을 접착제층(13)과 함께 픽업한다. 다이싱 공정에 있어서 접착제층(13)의 수염 형상의 절삭칩의 발생이 저감되기 때문에, 이들 절삭칩이 기재 필름(11)이나 점착제층(12)의 절삭칩과 함께 인접하는 칩간에서 융착하여 픽업 미스가 발생하는 것을 억제할 수 있다. 또한, 점착 필름(14)과 접착제층(13)을 합한 흡수율이 2.0체적％ 이하인 경우는, 점착제층(12)과 접착제층(13) 사이의 박리가 용이해지기 때문에, 반도체 칩(C)의 두께가 얇은 경우라도 양호하게 픽업된다.After the expanding process, a pickup process for picking up the chips C is carried out while the adhesive film 14 is expanded. More specifically, the chip C is pushed up from the lower side of the adhesive film 14 by a pin (not shown), and the chip C is transferred from the upper surface side of the adhesive film 14 to the suction jig Thereby picking up the chip (C) that has been separated, together with the adhesive layer (13). The cutting chips are fused between adjacent chips together with the cutting chips of the base film 11 and the pressure-sensitive adhesive layer 12, Occurrence of a miss can be suppressed. When the water absorption rate of the adhesive film 14 and the adhesive layer 13 is 2.0 volume% or less, peeling between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 is facilitated, Even if the thickness is thin, it is picked up well.

(다이 본딩 공정) (Die bonding step)

그리고, 픽업 공정을 실시한 후, 다이 본딩 공정을 실시한다. 구체적으로는, 픽업 공정에서 칩(C)와 함께 픽업된 접착제층에 의해, 반도체 칩을 리드 프레임이나 패키지 기판 등에 접착하여 반도체 장치를 제조한다.After the pickup process, the die bonding process is performed. Specifically, a semiconductor device is manufactured by adhering a semiconductor chip to a lead frame, a package substrate, or the like by an adhesive layer picked up together with the chip (C) in a pickup process.

이상으로부터, 점착 필름에 접착제층이 접합되어 수송ㆍ보관된 경우에, 접착제층이 공기 중의 수분을 흡수함으로써 연화되는 것을 저감시켜 픽업 미스의 발생을 억제할 수 있다.From the above, when the adhesive layer is bonded to the adhesive film and transported and stored, softening of the adhesive layer by absorbing moisture in the air is suppressed, and the occurrence of pick-up can be suppressed.

이어서, 본 발명의 실시예에 대하여 설명하지만, 본 발명은 이들 실시예에 한정되는 것은 아니다.EXAMPLES Next, examples of the present invention will be described, but the present invention is not limited to these examples.

(점착 필름의 제조)(Production of adhesive film)

(점착 필름 1) (Adhesive film 1)

50℃에서 48시간, 미리 건조한 저밀도 폴리에틸렌(노바테크 LL(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))을 용융하고, 압출기를 사용하여 두께 100㎛의 긴 필름 형상으로 기재 필름을 성형하였다. 용매인 톨루엔 400g 중에, n-부틸아크릴레이트 128g, 2-에틸헥실아크릴레이트 307g, 메틸메타크릴레이트 67g, 메타크릴산 1.5g, 중합 개시제로서 벤조일퍼옥시드의 혼합액을, 적절히 적하량을 조정하고, 반응 온도 및 반응 시간을 조정하여 관능기를 갖는 중합체 용액을 얻었다. 이어서 이 중합체 용액에, 방사선 경화성 탄소-탄소 이중 결합 및 관능기를 갖는 화합물로서, 별도로 메타크릴산과 에틸렌글리콜로부터 합성한 2-히드록시에틸메타크릴레이트 2.5g, 중합 금지제로서 히드로퀴논을 적절히 적하량을 조정하여 첨가하고, 반응 온도 및 반응 시간을 조정하여 방사선 경화성 탄소-탄소 이중 결합을 갖는 화합물 (A)의 용액을 얻었다. 계속해서, 화합물 (A) 용액 중의 화합물 (A) 100질량부에 대하여 폴리이소시아네이트(코로네이트 L(닛본 폴리우레탄사제, 상품명)) 1질량부를 첨가하고, 광중합 개시제(이르가큐어 184(닛본 시바 가이기사제, 상품명)) 0.5질량부, 용매로서 아세트산에틸 150질량부를 화합물 (A) 용액에 첨가하고 혼합하여, 방사선 경화성의 점착제 조성물을 제조하였다. 성형한 기재 필름 상에, 상기 점착제 조성물을 건조한 후의 막 두께가 10㎛로 되도록 도포 시공하고, 110℃에서 10분간 건조하여 점착 필름 1을 얻었다.(Novatech LL (trade name, manufactured by Nippon Polyethylene K.K.)) was preliminarily dried at 50 DEG C for 48 hours, and the base film was formed into a long film having a thickness of 100 mu m by using an extruder. A mixed solution of 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, 1.5 g of methacrylic acid and benzoyl peroxide as a polymerization initiator was added dropwise to 400 g of toluene as a solvent, The reaction temperature and the reaction time were adjusted to obtain a polymer solution having a functional group. Then, 2.5 g of 2-hydroxyethyl methacrylate synthesized from methacrylic acid and ethylene glycol separately as a compound having a radiation-curable carbon-carbon double bond and a functional group was added to this polymer solution, and hydroquinone was appropriately added dropwise as a polymerization inhibitor And adjusting the reaction temperature and reaction time to obtain a solution of the compound (A) having a radiation-curable carbon-carbon double bond. Subsequently, 1 part by mass of polyisocyanate (Coronate L (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.)) was added to 100 parts by mass of the compound (A) in the solution of the compound (A), and a photopolymerization initiator (Irgacure 184 Ltd.) and 150 parts by mass of ethyl acetate as a solvent were added to the compound (A) solution and mixed to prepare a radiation-curable pressure-sensitive adhesive composition. The pressure-sensitive adhesive composition was coated on the formed base film so that the film thickness after drying was 10 占 퐉 and dried at 110 占 폚 for 10 minutes to obtain the pressure-sensitive adhesive film 1.

(점착 필름 2)(Adhesive film 2)

저밀도 폴리에틸렌 대신에 고밀도 폴리에틸렌(노바테크 HD(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))을 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 2를 얻었다.Adhesive film 2 was obtained in the same manner as in the case of the adhesive film 1 except that high density polyethylene (Nova Tech HD (manufactured by Nippon Polyethylene K.K., trade name)) was used instead of low density polyethylene.

(점착 필름 3) (Adhesive film 3)

기재 필름의 막 두께를 70㎛로 한 것 이외는, 점착 필름 2와 마찬가지로 하여 점착 필름 3을 얻었다.An adhesive film 3 was obtained in the same manner as the adhesive film 2 except that the thickness of the base film was 70 mu m.

(점착 필름 4) (Adhesive film 4)

기재 필름의 막 두께를 70㎛로 한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 4를 얻었다.A pressure-sensitive adhesive film 4 was obtained in the same manner as in the pressure-sensitive adhesive film 1 except that the thickness of the base film was changed to 70 탆.

(점착 필름 5)(Adhesive film 5)

저밀도 폴리에틸렌 대신에 EVA(노바테크 EVA(닛본 폴리에틸렌 가부시끼가이샤제, 상품명))를 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 5를 얻었다.An adhesive film 5 was obtained in the same manner as in the case of the adhesive film 1 except that EVA (Nova Tech EVA (trade name, manufactured by Nippon Polyethylene K.K., Ltd.)) was used instead of low-density polyethylene.

(점착 필름 6)(Adhesive film 6)

저밀도 폴리에틸렌 대신에 폴리프로필렌(노바테크 PP(닛본 폴리프로 가부시끼가이샤제, 상품명))을 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 6을 얻었다.An adhesive film 6 was obtained in the same manner as in the case of the adhesive film 1 except that polypropylene (Novatech PP (trade name, manufactured by Nippon Polypro Corporation) was used instead of low-density polyethylene.

(점착 필름 7)(Adhesive film 7)

저밀도 폴리에틸렌 대신에 폴리아미드(나일론 MXD6(미쯔비시 가스 가가꾸 가부시끼가이샤제, 상품명))를 사용한 것 이외는, 점착 필름 1과 마찬가지로 하여 점착 필름 7을 얻었다.An adhesive film 7 was obtained in the same manner as in the case of the adhesive film 1 except that polyamide (nylon MXD6 (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.) was used instead of low-density polyethylene).

(접착 필름의 조정) (Adjustment of the adhesive film)

(접착 필름 1)(Adhesive film 1)

에폭시 수지로서 크레졸 노볼락형 에폭시 수지(에폭시 당량 197, 분자량 1200, 연화점 70℃) 15중량부, 아크릴 수지(질량 평균 분자량 : 80만, 유리 전이 온도 -17℃) 70중량부, 경화제로서 페놀 노볼락 수지(수산기 당량 104, 연화점 80℃) 15중량부, 촉진제로서 2-페닐이미다졸(큐어졸 2PZ(시꼬꾸 가세 가부시끼가이샤제, 상품명)) 1부를 유기 용제 중에서 교반하여 접착제 바니시를 얻었다. 얻어진 접착제 바니시를 두께 50㎛의 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하고, 120℃에서 10분간 가열 건조하여 접착 필름 1을 제작하였다., 15 parts by weight of a cresol novolak epoxy resin (epoxy equivalent: 197, molecular weight: 1200, softening point: 70 캜) as an epoxy resin, 70 parts by weight of an acrylic resin (weight average molecular weight: 80,000, glass transition temperature: 15 parts by weight of a phenol resin (a hydroxyl group equivalent of 104, a softening point of 80 DEG C) and 1 part of 2-phenylimidazole (Curing Sol 2PZ (trade name, available from Shikoku Chemicals Co., Ltd.) as a promoter) were stirred in an organic solvent to obtain an adhesive varnish . The obtained adhesive varnish was coated on a polyethylene terephthalate (PET) film having a thickness of 50 占 퐉 and heated and dried at 120 占 폚 for 10 minutes to produce an adhesive film 1.

(접착 필름 2)(Adhesive film 2)

에폭시 수지로서 크레졸 노볼락형 에폭시 수지(에폭시 당량 197, 분자량 1200, 연화점 70℃) 5중량부, 실란 커플링제로서 3-글리시독시프로필 트리메톡시실란 0.5질량부, 평균 입경 1.0㎛의 실리카 필러 50질량부, 아크릴 수지(질량 평균 분자량 : 80만, 유리 전이 온도 -17℃) 40질량부, 경화제로서 페놀 노볼락 수지(수산기 당량 104, 연화점 80℃) 5중량부, 촉진제로서 2-페닐이미다졸(큐어졸 2PZ(시꼬꾸 가세 가부시끼가이샤제, 상품명)) 1부를 유기 용제 중에서 교반하여 접착제 바니시를 얻었다. 얻어진 접착제 바니시를 두께 50㎛의 폴리에틸렌테레프탈레이트(PET) 필름 상에 도포하고, 120℃에서 10분간 가열 건조하여 접착 필름 2를 제작하였다.5 parts by weight of a cresol novolak epoxy resin (epoxy equivalent: 197, molecular weight: 1200, softening point: 70 DEG C) as an epoxy resin, 0.5 part by weight of 3-glycidoxypropyltrimethoxysilane as a silane coupling agent, , 40 parts by mass of an acrylic resin (weight average molecular weight: 80,000, glass transition temperature-17 占 폚), 5 parts by weight of phenol novolak resin (hydroxyl equivalent weight 104, softening point 80 占 폚) as a curing agent, (1 part) was stirred in an organic solvent to obtain an adhesive varnish. The obtained adhesive varnish was coated on a polyethylene terephthalate (PET) film having a thickness of 50 占 퐉 and heated and dried at 120 占 폚 for 10 minutes to produce an adhesive film 2. [

(접착 필름 3)(Adhesive film 3)

아크릴 수지 대신에 2,2'-비스[4-(4-아미노페녹시)페닐]프로판, 3,3',4,4'-비페닐테트라카르복실산 이무수물 및 무수 피로멜리트산으로부터 합성된 질량 평균 분자량 5만의 폴리이미드 수지를 사용한 것 이외는, 접착 필름 2와 마찬가지로 제작하였다.(4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and anhydrous pyromellitic acid instead of the acrylic resin Except that a polyimide resin having a mass average molecular weight of 50,000 was used.

(접착 필름 4)(Adhesive film 4)

아크릴 수지 대신에 2,2'-비스[4-(4-아미노페녹시)페닐]프로판, 3,3',4,4'-비페닐테트라카르복실산 이무수물 및 무수 피로멜리트산으로부터 합성된 질량 평균 분자량 5만의 폴리이미드 수지를 사용한 것 이외는, 접착 필름 1과 마찬가지로 제작하였다.(4-aminophenoxy) phenyl] propane, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride and anhydrous pyromellitic acid instead of the acrylic resin Except that a polyimide resin having a mass average molecular weight of 50,000 was used.

(제1 실시예)(Embodiment 1)

점착 필름 1 내지 5 및 접착 필름 1을 각각 직경 370㎜, 320㎜의 원형으로 컷트하고, 점착 필름의 점착제층과 접착 필름의 접착제층을 접합하였다. 마지막으로, 접착 필름의 PET 필름을 접착제층으로부터 박리하여, 표 1의 조합의 다이싱ㆍ다이 본딩 필름(실시예 1 내지 3, 비교예 1 내지 2)을 얻었다.The adhesive films 1 to 5 and the adhesive film 1 were cut into a circle having a diameter of 370 mm and 320 mm, respectively, and the adhesive layer of the adhesive film and the adhesive layer of the adhesive film were bonded. Finally, the PET film of the adhesive film was peeled off from the adhesive layer to obtain dicing / die-bonding films (Examples 1 to 3 and Comparative Examples 1 to 2) in combination of Table 1.

<투습도> <Water vapor permeability>

점착 필름 1 내지 5에 대하여, JIS K7129-C(가스 크로마토그래프법에 의한 수증기 투과도 측정)에 기초하여 투습도를 측정하였다. 측정 조건은 온도 25±0.5℃, 상대 습도차 90±2％로 하였다. 그 결과를 표 1에 나타낸다.The moisture permeability of each of the adhesive films 1 to 5 was measured based on JIS K7129-C (measurement of water vapor permeability by a gas chromatograph method). The measurement conditions were a temperature of 25 ± 0.5 ° C and a relative humidity difference of 90 ± 2%. The results are shown in Table 1.

Figure 112013041279843-pct00002
Figure 112013041279843-pct00002

<픽업성 시험> <Pickup Test>

상기 실시예 1 내지 3, 비교예 1 내지 2에 따른 다이싱ㆍ다이 본딩 필름을 300장씩 겹치고, 72시간, 온도 25도, 습도 70％ RH의 분위기 중에 방치한 후, 각각 위로부터 10장째의 다이싱 다이 본드 필름을 두께 100㎛ 및 75㎛의 웨이퍼에 70℃에서 10초간 가열하여 접합한 후, 10×10㎜로 다이싱하였다. 그 후, 점착제층에 자외선을 공냉식 고압 수은등에 의해 200mJ/㎠ 조사한 후, 웨이퍼 중앙부의 칩 250개에 대하여 다이 본더 장치(CPS-100FM(NEC 머시너리 가부시끼가이샤제, 상품명))에 의한 픽업 시험을 행하였다. 점착제층으로부터 박리된 접착제층이 유지된 칩이, 인접하는 칩이 부수하지 않고 픽업된 경우를 픽업이 성공한 것으로 하고, 픽업 성공률이 99％ 이상이면 양호로서 판정하여 ○표로 표시하고, 99％ 미만인 경우는 불량으로 판정하여 ×표로 표시하였다. 이들 결과를 표 2에 나타낸다.The dicing / die-bonding films according to Examples 1 to 3 and Comparative Examples 1 and 2 were stacked in an amount of 300 sheets each for 72 hours, at a temperature of 25 degrees and at a humidity of 70% RH, The single die bond film was bonded to the wafers having a thickness of 100 mu m and 75 mu m by heating at 70 DEG C for 10 seconds, and then diced into 10 x 10 mm. Thereafter, ultraviolet rays were irradiated onto the pressure-sensitive adhesive layer by air-cooled high-pressure mercury lamp at 200 mJ / cm 2, and thereafter, 250 chips at the center of the wafer were subjected to a pick-up test (CPS- . It is assumed that the picked-up case where the chip holding the adhesive layer peeled off from the pressure-sensitive adhesive layer is picked up without adjoining chips is judged as being successful. If the pick-up success rate is 99% or more, it is judged as good and marked with? Was judged to be defective and marked with a cross. These results are shown in Table 2.

Figure 112013041279843-pct00003
Figure 112013041279843-pct00003

비교예 1 내지 2에서는, 점착 필름의 투습도가 10.0g/㎡/day를 초과하고 있기 때문에, 공기 중의 수증기가 외측으로부터 내측으로 투과하여 접착제층이 흡수함으로써 연화되어, 다이싱 시에 수염 형상의 절삭칩이 발생하여, 더블 다이에 의한 픽업 미스가 다발하였다. 이에 반하여, 실시예 1 내지 3에서는, 점착 필름의 투습도가 10.0g/㎡/day 이하이어서, 공기 중의 수증기가 투과하기 어려워, 접착제층의 연화가 저감되어 있기 때문에, 다이싱 시의 수염 형상의 절삭칩의 발생이 저감되어, 픽업 미스가 충분히 감소하였다.In Comparative Examples 1 and 2, since the moisture permeability of the pressure-sensitive adhesive film exceeds 10.0 g / m 2 / day, water vapor in the air permeates from the outside to the inside and is absorbed by the adhesive layer to be softened, A chip was generated, and a pick-up mistake due to a double die occurred frequently. On the contrary, in Examples 1 to 3, since the moisture permeability of the adhesive film is 10.0 g / m 2 / day or less, the water vapor in the air is difficult to permeate and the softening of the adhesive layer is reduced, Chip generation is reduced, and the pick-up error is sufficiently reduced.

(제2 실시예)(Second Embodiment)

점착 필름 1, 6 내지 7 및 접착 필름 1 내지 4를 각각 직경 370㎜, 320㎜의 원형으로 컷트하고, 점착 필름의 점착제층과 접착 필름의 접착제층을 접합하였다. 마지막으로, 접착 필름의 PET 필름을 접착제층으로부터 박리하여, 표 3의 조합의 다이싱ㆍ다이 본딩 필름(실시예 4 내지 7, 비교예 3 내지 4)을 얻었다. 점착 필름 1, 6 내지 7에 대하여, 제1 실시예와 마찬가지로 투습도 시험을 행하여, 모든 점착 필름에 대하여 투습도가 10.0g/㎡/day 이하인 것을 확인하였다.The adhesive films 1, 6 to 7 and the adhesive films 1 to 4 were cut into a circle having a diameter of 370 mm and 320 mm, respectively, to bond the adhesive layer of the adhesive film to the adhesive layer of the adhesive film. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain dicing / die-bonding films (Examples 4 to 7 and Comparative Examples 3 to 4) in combination of Table 3. The adhesive films 1, 6 to 7 were subjected to a moisture-permeability test as in the case of the first embodiment, and it was confirmed that the moisture-permeability of all the adhesive films was 10.0 g / m 2 / day or less.

<흡수율> <Absorption Rate>

상기 실시예 4 내지 7, 비교예 3 내지 4에 따른 다이싱ㆍ다이 본딩 필름을, 50㎜×50㎜의 크기로 잘라내어 샘플로 하였다. 이 샘플을 50℃의 오븐에서 24시간 건조시킨 것을, 데시케이터에서 실온까지 냉각하여 중량을 측정하였다. 그 후, 23±1.0℃의 증류수 중에 샘플을 24시간 침지하고, 취출하여 칼피셔 수분계에 의해 흡수율을 산출하였다. 그 결과를 표 3에 나타낸다.The dicing / die-bonding films according to Examples 4 to 7 and Comparative Examples 3 to 4 were cut into a size of 50 mm x 50 mm to obtain a sample. The sample was dried in an oven at 50 DEG C for 24 hours. The sample was cooled from the desiccator to room temperature and weighed. Thereafter, the sample was immersed in distilled water at 23 ± 1.0 ° C for 24 hours, taken out, and the absorption rate was calculated by a Karl Fischer moisture meter. The results are shown in Table 3.

Figure 112013041279843-pct00004
Figure 112013041279843-pct00004

<픽업성 시험><Pickup Test>

실시예 1, 4 내지 6, 비교예 3 내지 4에 따른 다이싱ㆍ다이 본딩 필름에 대하여, 상술한 제1 실시예와 마찬가지로 픽업 시험을 행하였다. 단, 웨이퍼의 두께는 100㎛ 및 50㎛로 하였다. 픽업된 칩에 점착제층으로부터 박리된 접착 필름이 유지되어 있는 것을 픽업이 성공한 것으로 하고, 픽업 성공률이 99％ 이상이면 양호로서 판정하여 ○표로 표시하고, 99％ 미만인 경우는 불량으로 판정하여 ×표로 표시하였다. 이들 결과를 표 4에 나타낸다.The dicing / die-bonding films according to Examples 1, 4 to 6, and Comparative Examples 3 to 4 were subjected to a pick-up test in the same manner as in the first embodiment. However, the thicknesses of the wafers were 100 占 퐉 and 50 占 퐉. When the pick-up success rate is 99% or more, it is judged to be good and it is judged to be good. If it is less than 99%, it is judged to be bad and it is judged that the adhesive film peeled from the pressure- Respectively. These results are shown in Table 4.

Figure 112013041279843-pct00005
Figure 112013041279843-pct00005

비교예 3 내지 4는, 점착 필름의 투습도가 10.0g/㎡/day 이하이기 때문에, 두께가 100㎛인 웨이퍼에 대해서는 양호하게 픽업할 수 있었지만, 점착 필름과 접착제층을 합한 흡수율이 2.0체적％를 초과하고 있기 때문에, 점착제층과 접착제층 사이의 박리성이 나빠 두께가 50㎛인 웨이퍼에 대해서는 픽업 미스가 다발하였다. 이에 반해, 실시예 4 내지 7에서는, 점착 필름과 접착제층을 합한 흡수율이 2.0체적％ 이하로, 점착제층과 접착제층 사이의 박리성이 좋기 때문에, 두께가 50㎛로 얇은 웨이퍼에 대해서도 픽업 미스가 충분히 감소하였다.In Comparative Examples 3 and 4, since the moisture permeability of the adhesive film was 10.0 g / m 2 / day or less, it was possible to pick up the wafers having a thickness of 100 μm satisfactorily, but the water absorption rate of the adhesive film and the adhesive layer was 2.0 volume% , The peeling property between the pressure-sensitive adhesive layer and the adhesive layer was deteriorated, and a pick-up mist was frequently observed for a wafer having a thickness of 50 탆. On the other hand, in Examples 4 to 7, the water absorption rate of the adhesive film and the adhesive layer was 2.0 volume% or less, and the peelability between the pressure-sensitive adhesive layer and the adhesive layer was good, It was sufficiently reduced.

11 : 기재 필름
12 : 점착제층
13 : 접착제층
14 : 점착 필름
15 : 반도체 웨이퍼 가공용 테이프
20 : 링 프레임
21 : 스테이지
22 : 흡착 스테이지
23 : 밀어올림 부재11: base film
12: pressure-sensitive adhesive layer
13: Adhesive layer
14: Adhesive film
15: Tape for semiconductor wafer processing
20: ring frame
21: stage
22: Adsorption stage
23: lifting member

Claims (3)

기재 필름과 상기 기재 필름 상에 형성된 점착제층을 포함하여 이루어지는 점착 필름과, 상기 점착제층 상에 형성된 접착제층을 갖고, 상기 접착제층에 반도체 웨이퍼를 접착한 후, 상기 반도체 웨이퍼를 칩 단위로 절단하여, 상기 칩을 상기 접착제층과 함께 상기 점착제층으로부터 픽업하여 실장하기 위하여 이용되는 웨이퍼 가공용 테이프이며, 상기 점착 필름의 투습도가 10.0g/㎡/day 이하이고,
상기 점착 필름과 상기 접착제층을 합한 흡수율이 2.0체적％ 이하이며, 상기 점착제층의 겔 분율은 60% 이상인 것을 특징으로 하는 반도체 웨이퍼 가공용 테이프.A pressure-sensitive adhesive sheet comprising: an adhesive film comprising a base film and a pressure-sensitive adhesive layer formed on the base film; and an adhesive layer formed on the pressure-sensitive adhesive layer, wherein after the semiconductor wafer is bonded to the adhesive layer, , And a chip for tape processing used for picking up and mounting the chip from the pressure-sensitive adhesive layer together with the adhesive layer, wherein the pressure-sensitive adhesive film has a moisture permeability of 10.0 g / m 2 / day or less,
Wherein the water absorption rate of the adhesive film and the adhesive layer is 2.0% by volume or less, and the gel fraction of the pressure-sensitive adhesive layer is 60% or more. 삭제delete 삭제delete
KR1020137012090A 2010-11-11 2010-11-11 Adhesive film and tape for semiconductor wafer processing KR101602025B1 (en)

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JP2003238911A (en) * 2002-02-15 2003-08-27 Nitto Denko Corp Moistureproof transparent adhesive tape
JP2005332873A (en) * 2004-05-18 2005-12-02 Nitto Denko Corp Protective sheet for machining semiconductor wafer, and method for grinding rear surface of semiconductor wafer
JP2010163577A (en) * 2009-01-19 2010-07-29 Furukawa Electric Co Ltd:The Roll core and wafer processing tape wound around the roll core

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