KR101598557B1 - Substrate processing apparatus and method for heat treatment the same - Google Patents
Substrate processing apparatus and method for heat treatment the same Download PDFInfo
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- KR101598557B1 KR101598557B1 KR1020150083574A KR20150083574A KR101598557B1 KR 101598557 B1 KR101598557 B1 KR 101598557B1 KR 1020150083574 A KR1020150083574 A KR 1020150083574A KR 20150083574 A KR20150083574 A KR 20150083574A KR 101598557 B1 KR101598557 B1 KR 101598557B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The substrate processing apparatus according to the present invention includes a substrate supporting part on one side of which a substrate is supported, a plurality of lamps disposed opposite to each other and spaced apart from each other to irradiate light toward the substrate to heat treat the substrate, A process sensor for measuring the temperature of the substrate during the heat treatment process and a process control module for controlling the operation of the plurality of lamps in accordance with the temperature measured from the process sensor, A setting module for grouping a plurality of lamps into a plurality of lamp groups and setting an installation position of the process sensor,
The setting module sets the positions of a plurality of virtual sensors so that they are virtually located at different positions, and determines the distance between the virtual sensor and the lamp, the heat energy that escapes from the substrate when the substrate is heated, The temperature of the virtual sensor is calculated using the thermal model considered and the plurality of lamps are grouped into a plurality of lamp groups by using the calculated temperature of the virtual sensor and the installation position of the process sensor is set.
According to the embodiment of the present invention, it is possible to shorten the time for determining a plurality of lamps by optimizing the grouping time and the position of the process sensor. Therefore, the setting time of the substrate processing apparatus can be shortened.
Further, by calculating the temperature based on the thermal model according to the present invention when grouping a plurality of lamps and positioning the plurality of lamps, temperature reliability can be ensured and grouping of lamps and positioning of process sensors can be optimized.
Description
The present invention relates to a substrate processing apparatus and a heat treatment method using the substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of performing uniform heat treatment of a substrate, easily controlling the substrate uniformly, and a heat treatment method using the same .
Generally, a semiconductor device is manufactured by repeating several processes such as ion implantation, thin film deposition, and heat treatment. Among them, the heat treatment process may be oxidation to the object to be treated, thermal diffusion of the implanted ions, and various annealing processes. Examples of the annealing process include annealing for recovery of crystallinity after impurity ions are implanted, contact characteristics of aluminum (Al) and silicon (Si), and improvement of interfacial characteristics of silicon (Si) and silicon oxide (SiO 2 ) Annealing, etc., and sintering for forming a silicide.
In addition, in the manufacture of display devices such as LCDs, PDPs, and OLEDs, a heat treatment process is involved. For example, there is a sintering process using heat treatment at the time of manufacturing an OXIDE TFT, an IGZO (Indium Gallium Zinc Oxide) TFT, and a dehydrogenation process and an ion activation process through LTPS heat treatment.
Examples of apparatuses for performing various heat treatment processes as described above include a furnace and a rapid thermal process (RTP) apparatus. Among these, the rapid thermal processing apparatus has a merit that the substrate can be treated with high temperature heat in a short time to achieve the desired effect, and the side effect of generating impurities during the heat treatment process can be minimized.
A rapid thermal processing system A plurality of lamps positioned between the plurality of lamps and the substrate support, the plurality of lamps being positioned between the plurality of lamps and the substrate support; A window through which the thermal energy generated from the plurality of lamps is transmitted to be transmitted to the substrate, and a plurality of sensors provided on the substrate support for measuring the temperature of the substrate.
Each of the plurality of lamps is a bulb type, not a linear type linearly extended in the extending direction of the substrate. The plurality of lamps are arranged in a first direction and in a direction crossing the first direction and are spaced apart from each other. For example, a plurality of lamps are spaced apart from each other such that the lamps are arranged in the X-axis direction and the Y-axis direction so as to correspond to the formation of the tetragonal substrate. The plurality of sensors are spaced apart from each other depending on the shape corresponding to the substrate and the arrangement form of the plurality of lamps, and the temperature of the substrate at each position is measured.
In order to perform a uniform heat treatment on the substrate, it is necessary to optimize the operating conditions of the plurality of lamps, for example, the electric power, before the actual heat treatment process. For this purpose, each of the plurality of lamps is operated, and at this time, the temperature is measured by a plurality of sensors, and an operating condition for operating each of the plurality of lamps in the actual heat treatment process, Setting.
On the other hand, in the display industry, as the substrate size increases, the number of lamps and sensors increases. For example, in order to perform heat treatment on a large area substrate of 8G or more, 400 to 800 lamps are required and the number of sensors is increased accordingly.
However, as described above, in order to optimize the operating conditions of the plurality of lamps, the operator must analyze the temperature measured by the plurality of sensors and the temperature change according to the power change of each lamp. Therefore, as the number of the sensors increases, It takes a long time to optimize the operating condition of the lamp, thereby causing a problem that the process yield is reduced.
The present invention provides a substrate processing apparatus capable of controlling the uniform heating of the substrate efficiently and quickly, and a heat treatment method using the same.
The present invention provides a substrate processing apparatus that can be easily controlled for uniform heating of a substrate according to a change in substrate area, and a heat treatment method using the same.
A substrate processing apparatus according to the present invention includes: a substrate supporting part having a substrate supported on a surface thereof; A plurality of lamps positioned opposite to the substrate support and spaced apart from each other to irradiate light toward the substrate to heat the substrate; A process sensor which is spaced apart from the substrate supporter and measures the temperature of the substrate during the heat treatment process; And a process control module for controlling the operation of the plurality of lamps according to a temperature measured from the process sensor; And a setting module for grouping the plurality of lamps into a plurality of lamp groups and setting an installation position of the process sensor before installing the process sensor on the substrate supporting part, The position of the plurality of virtual sensors is set so as to be located virtually at the position, and a thermal model that considers the distance between the virtual sensor and the lamp, the thermal energy exiting the substrate at the time of substrate heating, The temperature of the virtual sensor is calculated, and the plurality of lamps are grouped into a plurality of lamp groups by using the calculated temperature of the virtual sensor, and the installation position of the process sensor is set.
In the setting module, the sum of the distance (r ij ) between the virtual sensor and the lamp and the thermal energy (T i 4 ) exiting the substrate during substrate heating minus the thermal energy (b) The temperature in each of the plurality of virtual sensors is calculated using Equation (2) having a thermal model.
&Quot; (2) "
t: time
i: any one of a plurality of sensors (i = 1, ..., n i )
n i : the number of sensors
j: any one of a plurality of lamps (i = 1, ..., n p )
n p : number of lamps
T i : Temperature of the sensor
r ij : Distance between lamp and sensor
G: Weight constant
P j : Power applied to the lamp
b: thermal energy of the substrate at room temperature
λ: constant
In the setting module, the temperature in each of the plurality of virtual sensors is calculated using Equation (2) using the thermal model of Equation (3) to which the adjustment factor? According to the material of the thin film formed on the substrate and the lamination structure of different materials is applied .
&Quot; (3) "
eta: a constant that varies depending on the structure of the thin film formed on the substrate and the structure in which different materials are stacked
Wherein the setting module includes: a sensor temperature calculation unit that calculates a temperature in each of the plurality of virtual sensors using the equation (2) or (7) according to a power application condition change for achieving a target temperature; A minimum value selecting unit for selecting a power applying condition in which a maximum temperature deviation between the calculated temperature of the virtual sensor and the target temperature in accordance with the power applying condition and a sum of the difference between the power and the average power of each lamp are minimized; Wherein the plurality of lamps are operated to apply a power application condition selected by the minimum value selection unit to calculate a power deviation ratio of each of the plurality of lamps, A plurality of virtual sensors corresponding to the plurality of lamp groups, and a grouping unit for grouping the plurality of virtual sensors into a plurality of lamp groups of the plurality of virtual sensors, And a sensor position determining unit that determines a position of each of the plurality of virtual sensors, in which the maximum temperature deviation between the target temperature and the target temperature becomes minimum, as a position at which the sensor is installed.
Wherein the minimum value selection unit calculates a temperature deviation between a temperature of each of the plurality of virtual sensors according to the power application condition calculated in the temperature calculation unit and the target temperature and selects a maximum value among the calculated maximum temperature deviations part; A power calculator for calculating a power deviation between the power of each lamp and the average power according to the power application condition; A summation unit for summing the maximum temperature deviation selected by the maximum value selection unit and the power deviation calculated by the power calculation unit according to the power application condition; And a minimum value selecting unit for selecting a minimum value among the plurality of sum values summed in the summing unit according to the power applying condition and selecting the power applying condition having the minimum value.
The minimum value selection unit calculates a plurality of sum values by summing the maximum temperature deviation and the sum of the power deviations according to the change of the power application condition according to Equation (1)
A power application condition having a minimum value among a plurality of sum values is found.
[Equation 1]
T k sp : Target temperature
β: Weight constant
Wherein the grouping unit comprises: a power deviation ratio calculating unit for calculating a power deviation ratio for each of the plurality of lamps by applying power to the plurality of lamps under the selected power applying condition; And a grouping unit for comparing the power deviation ratios of the lamps calculated by the power deviation ratio calculation unit with each other and grouping them into a plurality of lamps.
In the power deviation ratio calculation unit, the respective lamp power ratios (? J1) and the average power ratios (? J1) of the plurality of lamp power ratios
&Quot; (5) "
n sp : number of output points
a j1 : power ratio of lamp to reference power
The average power ratio of the plurality of lamp power ratios?
&Quot; (6) "
p 1 : Reference power
k: calculation time (k = 1, 2, 3, ..., n sp )
A plurality of reference power deviation ratios are previously set in the grouping unit,
A power deviation ratio calculation unit for calculating a power deviation ratio for each of the lamps and a plurality of calculated power deviation ratios for each lamp; Group.
Wherein the sensor positioning unit is configured to determine the temperature of each of the plurality of virtual sensors calculated from the sensor temperature calculation unit and the target temperature of the plurality of virtual sensors calculated from the sensor temperature calculation unit in accordance with the position change condition of the plurality of virtual sensors, A temperature deviation calculator for calculating a temperature deviation between the first and second heaters; A maximum temperature deviation selection unit for selecting a maximum temperature deviation among deviations between the temperatures of the plurality of virtual sensors and the target temperature under each of the position condition changing conditions; And a sensor position determining unit for determining a position change condition of a plurality of virtual sensors having a minimum value among the plurality of maximum temperature deviations selected in accordance with the positional change of the plurality of virtual sensors and determining the position change condition as the mounting position of the process sensor.
The sensor positioning unit finds a plurality of position change conditions of the virtual sensors having the minimum value among the plurality of maximum temperature deviation values corresponding to the positional change of the plurality of virtual sensors by Equation (7).
&Quot; (7) "
Wherein the process control module is positioned by the sensor positioning unit so that the power applied to the plurality of lamp groups is measured in accordance with a temperature measured from a plurality of process sensors provided on the substrate supporting unit .
The process control module includes a PID control unit and a QILC control unit.
The present invention provides a method for performing a heat treatment using a plurality of lamps positioned opposite to a substrate supporting part on which a substrate is supported by using a process sensor for measuring the temperature of the substrate during a heat treatment process, Presetting a plurality of lamps and process sensors; And setting a position of a plurality of virtual sensors so that the virtual sensors are located at different positions; And calculating a temperature of the plurality of virtual sensors,
In calculating the temperature in each of the plurality of virtual sensors, a thermal model is used in consideration of a distance between the virtual sensor and the lamp, heat energy escaping from the substrate when the substrate is heated, and thermal energy held by the substrate at room temperature.
(R ij ) between the virtual sensor and the lamp and the thermal energy (T i) exiting the substrate at the time of heating the substrate are calculated in the setting module, 4 ) having a thermal model obtained by subtracting the thermal energy (b) possessed by the substrate at room temperature from the sum of (2) and ( 4 ).
&Quot; (2) "
t: time
i: any one of a plurality of sensors (i = 1, ..., n i )
n i : the number of sensors
j: any one of a plurality of lamps (i = 1, ..., n p )
n p : number of lamps
T i : Temperature of the sensor
r ij : Distance between lamp and sensor
G: Weight constant
P j : Power applied to the lamp
b: thermal energy of the substrate at room temperature
λ: constant
And calculating the temperature of the virtual sensor installed at each of the plurality of virtual positions, wherein the equation (2) is obtained by using the thermal equation of equation (3) which applies the adjustment factor? According to the material of the thin film formed on the substrate and the lamination structure of different materials And the temperature of each of the plurality of virtual sensors is calculated using the model.
&Quot; (3) "
eta: a constant that varies depending on the structure of the thin film formed on the substrate and the structure in which different materials are stacked
Calculating a temperature in each of the plurality of virtual sensors and grouping the plurality of lamps into a plurality of lamp groups using the calculated temperature of each of the plurality of virtual sensors; Changing a position of the plurality of virtual sensors and setting a position where the plurality of process sensors are to be installed according to a power of a plurality of lamps in accordance with a change in position of the plurality of virtual sensors; Fixing the plurality of process sensors to the substrate supporting unit so as to be positioned at the set mounting position;
.
Calculating a temperature in each of the plurality of virtual sensors using Equation (2) or Equation (3) according to a power application condition change for achieving a target temperature; Selecting a power application condition in which the maximum temperature deviation between the calculated temperature of the virtual sensor and the target temperature in accordance with the power application condition and the sum of the difference between the power and the average power of each lamp are minimized; The plurality of lamps are operated in accordance with the selected power applying condition to calculate the power deviation ratio of each of the plurality of lamps and the plurality of lamps are divided into a plurality of lamp groups according to the power deviation ratio of each of the plurality of lamps Grouping process; Setting positions of a plurality of virtual sensors corresponding to the plurality of lamp groups; Determining a position of each of the plurality of virtual sensors, in which a maximum temperature deviation between a temperature of each of the plurality of virtual sensors calculated in accordance with a change in the positional condition of the plurality of virtual sensors and a target temperature becomes minimum, as a position at which the sensor is installed; .
The step of selecting the power application condition that the sum value is minimum includes the steps of calculating a temperature deviation between the temperature of each of the plurality of virtual sensors and the target temperature according to the power application condition; A step of finding a maximum temperature deviation among a temperature deviation between a temperature of each of the plurality of virtual sensors calculated according to each power application condition and a target temperature; Calculating a power deviation between a power of each lamp and an average power according to a power application condition; Summing the maximum temperature deviation and the power deviation according to the power application condition; Searching for a power application condition having a minimum value among a plurality of sum values calculated according to a power application condition;
.
Calculating a plurality of sum values by summing up the sum of the maximum temperature deviation and the power deviation due to the change of the power application condition according to Equation (1) in searching for the power application condition having the minimum value.
[Equation 1]
T k sp : target temperature
β: Weight constant
Grouping the plurality of lamps into a plurality of groups includes: applying power to the plurality of lamps under the selected power application condition; Calculating a power deviation ratio for each of the plurality of lamps; Comparing the power deviation ratios calculated for each of the plurality of lamps with each other to group them into a plurality of lamps;
.
Calculating the power deviation ratio includes calculating power ratios of the lamps with respect to the reference power by using power applied to one of the plurality of lamps as a reference power; Calculating an average power ratio that is an average value of power ratios for the plurality of lamps; .
In calculating the power deviation ratio, it is possible to calculate an average of the power ratios? J1 of the respective lamps with respect to the reference power p 1 and an average of the power ratios? J1 of the plurality of lamps, Power ratio
&Quot; (5) "
n sp : number of output points
a j1 : power ratio of lamp to reference power
The average power ratio (
&Quot; (6) "
p 1 : Reference power
k: calculation time (k = 1, 2, 3, ..., n sp )
Setting a plurality of reference power deviation ratios of different ranges in grouping the plurality of lamps; The calculated power deviation ratio for each lamp
Wherein the step of determining the position of the process sensor comprises the steps of: setting a position of a plurality of virtual sensors so as to be located at virtual positions corresponding to the plurality of lamp groups; Calculating a temperature of each of the plurality of virtual sensors in accordance with a change in the positional condition of the plurality of virtual sensors; Calculating a deviation between a temperature of each of the plurality of virtual sensors and a target temperature calculated in accordance with a change of a position condition of the plurality of virtual sensors; Selecting a maximum temperature deviation among deviations between the temperatures of the plurality of virtual sensors and the target temperature under each of the position condition changing conditions; Selecting a position condition having a minimum value among the maximum temperature deviations selected in accordance with the change of the positional conditions of the plurality of virtual sensors to be the installation position of the process sensor; .
In the process of determining the installation position of the process sensor, a position condition having a minimum value among the plurality of maximum temperature deviation values selected in accordance with the positional change of the plurality of virtual sensors is selected by the equation (7).
&Quot; (7) "
In the process of heat-treating the substrate, the power applied to the plurality of lamp groups is controlled according to the temperature measured from the plurality of positioned process sensors.
In the process of heat-treating the substrate, the process control module controls the PID control method and the QILC control method.
According to the embodiment of the present invention, it is possible to shorten the time for determining a plurality of lamps by optimizing the grouping time and the position of the process sensor. Therefore, the setting time of the substrate processing apparatus can be shortened.
Further, by calculating the temperature based on the thermal model according to the present invention when grouping a plurality of lamps and positioning the plurality of lamps, temperature reliability can be ensured and grouping of lamps and positioning of process sensors can be optimized.
Also, by deriving a thermal model so as to be able to cope with the film quality material, it is possible to flexibly cope with the type of the thin film formed on the substrate and improve the reliability of the heat treatment irrespective of the kind of the thin film.
1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention;
Fig. 2 shows a layout structure according to the first embodiment for a plurality of lamps
3 is a view showing an arrangement structure according to the second embodiment;
4 is a view illustrating a state in which a plurality of lamps are grouped into a plurality of groups and a process sensor is provided in a number corresponding to a plurality of lamp groups,
5 is a diagram showing a state in which a plurality of virtual sensors are virtually positioned so as to be uniformly distributed with respect to a substrate area in order to group a plurality of lamps into a plurality of groups;
6 is a view for explaining the radiation pattern of light from each lamp and the distance between the lamp and the sensor;
7A is a view showing a state in which a first material layer is formed on a substrate
7B is a view showing a state in which a first material layer and a second material layer are laminated on a substrate
8 is a graph showing the temperature change of the process sensor with the lapse of time
9 is a flowchart sequentially illustrating a process of selecting a power application condition having a minimum sum value in order to group a plurality of lamps
10 is a table for explaining application of power to a plurality of lamps under different power application conditions (first power application condition, second power application condition, ...)
11 is a graph showing changes in the power deviation ratio with time for each lamp
12 is a flowchart sequentially illustrating a method of calculating and grouping the power deviation ratios? J1 over time. 13 is a table showing a method of calculating and grouping the power deviation ratios? J1 over time
FIG. 14 is a flowchart for sequentially illustrating a method of positioning a process sensor according to a method according to an embodiment of the present invention.
Figs. 15 and 16 are diagrams illustrating an example of changing the position of a virtual sensor for positioning a process sensor
FIG. 17 is a graph showing the relationship between the position of the first to third virtual sensors according to the plurality of position conditions (the first position condition, the second position condition, the third position condition ...), the temperature deviation
18 is a view illustrating a case where a substrate is heat-treated by a PID control method, and FIG. 19 is a view illustrating a case where a substrate is heat-treated by a PID control method and a Q-ILC method
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.
1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a view showing an arrangement structure according to the first embodiment of the plurality of lamps, and FIG. 3 is a view showing the arrangement structure according to the second embodiment. FIG. 4 is a diagram illustrating a state in which a plurality of lamps are grouped into a plurality of groups and a process sensor is provided in a number corresponding to a plurality of lamp groups and installed at an optimum position.
Figs. 5 to 17 are views for explaining a setting method for optimizing the substrate processing apparatus before the actual heat treatment step. Fig. FIGS. 5 to 13 are diagrams for explaining a method of grouping a plurality of lamps. FIG. 14 to FIG. 17 are diagrams for explaining a method of grouping a plurality of lamps by providing a process sensor corresponding to a plurality of grouped lamp groups, Fig. 8 is a diagram for explaining a method for determining a position. FIG. 18 is a view illustrating a case where a substrate is heat-treated by a PID control method, and FIG. 19 is a view illustrating a case where a substrate is heat-treated by a PID control method and a Q-ILC method.
More specifically, Fig. 5 is a diagram showing a state in which a plurality of virtual sensors are virtually positioned so as to be evenly distributed over a substrate area, in order to group a plurality of lamps into a plurality of groups. Fig. 6 is a view for explaining the radiation pattern of the light from each lamp and the distance between the lamp and the sensor. Fig. FIG. 7A is a view showing a state where a first material layer is formed on a substrate, and FIG. 7B is a view showing a state in which a first material layer and a second material layer are laminated on a substrate.
8 is a graph showing the temperature change of the process sensor with time. 9 is a flowchart sequentially illustrating a process of selecting a power application condition having a minimum sum value in order to group a plurality of lamps. 10 is a table for explaining application of power to a plurality of lamps under different power application conditions (first power application condition, second power application condition, ...). 11 is a graph showing a change in the power deviation ratio with time for each lamp. 12 is a flowchart sequentially illustrating a method of calculating and grouping the power deviation ratios? J1 over time. 13 is a table illustrating a method of calculating and grouping the power deviation ratios? J1 over time. FIG. 14 is a flowchart for sequentially illustrating a method of positioning a process sensor according to a method according to an embodiment of the present invention. Figs. 15 and 16 are views for explaining the position of the virtual sensor for changing the position of the process sensor. Fig. FIG. 17 is a graph showing the relationship between the position of the first to third virtual sensors according to the plurality of position conditions (the first position condition, the second position condition, the third position condition ...), the temperature deviation
A substrate processing apparatus according to an embodiment of the present invention is a rapid thermal process (RTP) for generating heat at a high temperature and rapidly heating the substrate using the generated heat.
Referring to FIG. 1, a substrate processing apparatus, that is, a rapid thermal processing apparatus according to an embodiment of the present invention includes a
The substrate S according to the embodiment may be a glass substrate applied to an LCD, an OLED, a solar cell, or the like, more preferably a large area substrate. That is, the substrate S according to the embodiment has a large area of 270 [mm] × 360 [mm] of the first generation to a size of 2,200 [mm] × 2,500 [mm] of the eighth generation. Of course, the size and shape of the substrate may vary depending on the apparatus of the display to be manufactured.
The
In the above description, the shape of the
The
The
The
The
Each of the
For example, the
The plurality of
For example, the substrate S may include a first side S10a extending in the X-axis direction, a first side S10b extending in the X-axis direction and spaced apart from the first side S10a, A third side S20a extending in the Y axis direction orthogonal to the first side S10a and connecting one end of the first side S10a to one end of the first side S10b; And a fourth side S20b connecting the other end of the first side S10a and the other side of the third side S20a.
In order to uniformly heat the quartz substrate S, the plurality of
Hereinafter, the arrangement structure of the plurality of
Referring to FIGS. 2 and 3, a plurality of
2 and 3, a plurality of
The
The arrangement of the plurality of
On the other hand, as the area of the substrate increases, the number of lamps needs to be increased, and in the case of a general RTP heat treatment apparatus for rapidly heating a substrate having a large area, 400 to 600 lamps are required. In controlling the power of a plurality of lamps, there is a limitation in controlling each lamp of 400 to 600 individually. Therefore, the lamps having the same or similar thermal characteristics to a plurality of lamps are grouped into one group (i.e., lamp group), and power is controlled for each group. In addition, in general, a plurality of process sensors 9500 are installed in the
That is, in the present invention, in order to provide a substrate processing apparatus for uniformly heating the substrate S efficiently and rapidly, the plurality of
In the present invention, a
The
The
In the present invention, in order to provide a substrate processing apparatus for uniformly heating the substrate S efficiently and quickly, a process according to the present invention is performed in a process of reducing the maximum temperature deviation from the target temperature The position is determined and preset. Preferably, the number of
The
In the
Thus, the temperature measured from each of the plurality of
For example, when the
Hereinafter, a setting module according to an embodiment of the present invention will be described in detail.
The
The setting module 6000 according to the embodiment of the present invention includes a sensor temperature calculation unit 6100 for calculating the temperature in each of the plurality of virtual sensors 50a, 50b, and 50c in accordance with the power application condition change for achieving the target temperature, A power application condition is selected or selected in which the sum of the maximum temperature deviation between the calculated temperature of the virtual sensor 50 and the target temperature and the difference between the power of the lamp 320 and the average power according to the power application condition becomes minimum The plurality of lamps 320 are operated by applying the power application condition selected by the minimum value selection unit 6200 and the minimum value selection unit 6200 to calculate the power deviation ratio of each of the plurality of lamps 320, A grouping unit 6300 for grouping the plurality of lamps 320 into a plurality of lamp groups according to the power deviation ratio of each of the plurality of lamp groups 320, a plurality of lamp groups 320a, 320b, and 320c, The position of the sensor 50 is set , The position of each of the plurality of virtual sensors (50) whose maximum temperature deviation between the temperature of each of the plurality of virtual sensors (50) calculated in accordance with the positional condition change of the plurality of virtual sensors (50) And a sensor positioning unit 6430 for determining the position at which the process sensor 500 is to be installed.
The minimum
Hereinafter, a process of selecting a minimum value selecting or selecting process and a power applying condition having a minimum value in the minimum value selecting unit will be described in detail. At this time, for example, 39 lamps and 225 virtual sensors are installed (refer to FIG. 5).
The minimum value selection unit calculates a minimum value through Equation (1), and selects or selects a power applying condition having a minimum value.
Here, T k sp refers to the desired temperature to the heat treatment to the substrate (S) and, i is means a virtual sensor (50), n i denotes the total number of
In
As described above, the temperature difference between the target temperature (T k SP ) and the virtual sensor (50) temperature (T i )
On the other hand, the temperature of the substrate S is determined by the thermal energy of the light emitted from the plurality of
The temperature measured by the
6A to 6C, the plurality of
The energy generated when light is emitted from the plurality of
Therefore, in the sensor
The thermal model for calculating the temperature of the
In the equation (2), t is a time, T i is a temperature calculated by the
Here, the distance r ij between any one of the
On the other hand, the thermal characteristics of the substrate S on which a single thin film is formed and the thermal characteristics of the substrate S on which the different materials are laminated are different from each other. 7A, the plurality of
Therefore, in the present invention, in calculating the temperature of the
Here, η is a constant value that varies depending on the material, the number of layers, and the like of the thin film stacked on the substrate S, and η can be set according to the number of layers and the number of layers through various experiments. The value of? Obtained through the experiment is applied to Equation (3).
Hereinafter, for the sake of convenience of explanation, formula (2) will be exemplified for calculating the temperature of the virtual sensor. However, the virtual sensor temperature calculation described below is not limited to the expression (2), but the expression (3) is applicable.
On the other hand, when a plurality of
In calculating the temperature Ti of the
In the present invention, the temperature of each virtual sensor can be calculated through a thermal model such as Equations (2) to (4) without directly measuring the temperature with the plurality of process sensors (500).
Then, the energy supplied from the
The temperature (T i ) of the
Hereinafter, a minimum value selection method using Equation (1) will be described with reference to FIGS. 9 and 10. FIG.
In order to select the minimum value, the power P j applied to the plurality of
Then, according to the different power application conditions, the maximum temperature deviation (
Referring to FIG. 9, power is first applied to each of the plurality of lamps 320 (S100), and power is applied to each of the plurality of
On the other hand, the temperature T i of each of the plurality of
Thereafter, the calculated average power
Next, the power is applied to the plurality of
Similarly, the third power condition, the fourth power condition ... ... , Power is applied to the plurality of
The
Hereinafter, the grouping process in the
When applying a plurality of
The power
The power
In Equation (5) ,? J1 is the power ratio of each
k = 1, 2, 3, ... , N is the ratio value for the power (p j) of the power ratio (α j1) is compared to the power at any one of the lamp by which each
The reference lamp is not limited to the first lamp described above, but may be any one of a plurality of lamps. In the calculation, the
For example, assuming that the reference power is the power (p 1 ) of the first ramp and the power ratio ( 2 1 ) of the power (P 2 ) of the second ramp is calculated, the following equation is solved .
If the calculated power ratio? 2 · 1 of the second lamp is applied to Equation (6) and divided by the number of k, the average power ratio of the second lamp
The power ratio? J1 of each
In the
Hereinafter, a grouping method using Equations (5) and (6) in a
First, each lamp is operated under the power application condition having the minimum sum value by the method described in FIG. 9 (S410), and the average power ratio (
The
When the grouping of the plurality of
In the present invention, in determining the position of the
More specifically, while changing the virtual positions of the plurality of
When the position of one
Accordingly, in the present invention, at least one position is changed for a plurality of
Hereinafter, when the position of at least one of the plurality of
The
Hereinafter, the positioning process of the
On the other hand, since the plurality of
In the embodiment, the optimal sensor position is determined by changing the positions of the plurality of
That is, the temperature deviation (| T k sp -T between the target temperature (T k sp ) and each virtual sensor (50a, 50b, 50c) according to each position condition of the first to third virtual sensors (50a, 50b, 50c) │ i) of the maximum temperature difference (max │T k sp -T i │ ) output, and having a minimum value of the plurality of the maximum temperature difference (max │T k sp -T i │ ) was determined for each location of The positions of the first to third
The position of the
To change the position of at least one of the first to third
Hereinafter, a sensor positioning process according to an embodiment of the present invention will be described with reference to FIGS. 14 to 17. FIG.
First, on the first quadrant, as shown in FIG. 15, the first to third
The positions of the first to third
The same process as described above is carried out a plurality of times while changing the positional condition, and the first one having the minimum value among the maximum temperature deviations (max | T k sp -T i |) according to each position condition calculated by performing a plurality of times, And third
The positions of the selected first through third
On the other hand, the
The first to third
Here, the first to
Thereafter, during the actual process, the power of the plurality of lamp groups is controlled in real time using the installed first to
The
More specifically, the target temperature for the heat treatment of the substrate S to be heat-treated is input, and the operation of the plurality of
The process control module according to the present invention includes a proportional integral differential (PID) controller and a quadratic criterion-based ILC (Q-ILC) controller that combines input bias signals over time.
The control method in the PID controller can be expressed by Equation (8) and Equation (9) as an input-output pair.
In Equation (9), h denotes a sampling period.
A conventional PID controller is a control method that is tuned so that the quadratic cost consisting of control error and input change is simultaneously minimized, and is expressed by Equation (10).
A is a gain matrix between an output value and a ramp power in the process control module determined in the ramp grouping process of the complement, A is a parameter vector of the PID controller, w (t) Is an error weight.
The control using the above-described PID controller in the substrate heat treatment process is as shown in FIG.
Referring to FIG. 18, the temperature rises with time, and the temperature stabilizes at about 300 degrees after a predetermined time. However, in the actual process progress (B), an error which is delayed compared with the reference (A) at the beginning of control is shown (C), and lamp power is unstable. Unstable lamp power is a factor that shortens lamp life.
In order to solve this problem, the process control module of the present invention controls the rapid thermal processing process of the substrate by using the PID control method and the Q-ILC control method together.
In order to improve the tracking performance, the bias input u bias of Equation (8) is set to u bias (t) with time as a variable, and the minimum value And feedforward the input signal for the kth run after the (k-1) th run, as shown in Equation (11).
here,
In the process control module according to the present invention, the Q-ILC control method and the PID control method described above are introduced together to control the substrate heat treatment process. That is, when performing Q-ILC four times starting from the result of PID control, u 4 (t) is obtained as u bias ( t). That is, referring to FIG. 19, it can be seen that the tracking performance is improved only in the 4-position after 4 repetitions.
As described above, according to the present invention, it is possible to shorten the time for determining the grouping time and the position of the
Also, by deriving a thermal model so as to be able to cope with the film quality material, it is possible to flexibly cope with the type of the thin film formed on the substrate and improve the reliability of the heat treatment irrespective of the kind of the thin film.
Further, by controlling the PID control and the Q-ILC control in combination during the substrate heat treatment process, it is possible to prevent the occurrence of control errors, thereby improving the control reliability.
320: lamp 500: process sensor
50: Virtual sensor
Claims (30)
A plurality of lamps positioned opposite to the substrate support and spaced apart from each other to irradiate light toward the substrate to heat the substrate;
A process sensor which is spaced apart from the substrate supporter and measures the temperature of the substrate during the heat treatment process; And
A process control module for controlling the operation of the plurality of lamps according to a temperature measured from the process sensor; And
A setting module for grouping the plurality of lamps into a plurality of lamp groups and setting an installation position of the process sensors before installing the process sensors on the substrate support;
/ RTI >
The setting module includes:
The positions of a plurality of virtual sensors are set so as to be virtually located at different positions,
The temperature of the virtual sensor is calculated by using a thermal model that considers the distance between the virtual sensor and the lamp, the thermal energy exiting the substrate upon heating the substrate, and the thermal energy of the substrate at room temperature, Grouping the plurality of lamps into a plurality of lamp groups using a temperature, and setting an installation position of the process sensor.
In the setting module, the sum of the distance (r ij ) between the virtual sensor and the lamp and the thermal energy (T i 4 ) exiting the substrate during substrate heating minus the thermal energy (b) And calculates a temperature in each of the plurality of virtual sensors using Equation (2) having a thermal model.
&Quot; (2) "
t: time
i: any one of a plurality of sensors (i = 1, ..., n i )
n i : the number of sensors
j: any one of a plurality of lamps (i = 1, ..., n p )
n p : number of lamps
T i : Temperature of the sensor
r ij : Distance between lamp and sensor
G: Weight constant
P j : Power applied to the lamp
b: thermal energy of the substrate at room temperature
λ: constant
In the setting module, the temperature in each of the plurality of virtual sensors is calculated using Equation (2) using the thermal model of Equation (3) to which the adjustment factor? According to the material of the thin film formed on the substrate and the lamination structure of different materials is applied The substrate processing apparatus comprising:
&Quot; (3) "
eta: a constant that varies depending on the structure of the thin film formed on the substrate and the structure in which different materials are stacked
The setting module includes:
A sensor temperature calculation unit for calculating a temperature in each of the plurality of virtual sensors using Equation (2) or Equation (3) according to a power application condition change for achieving a target temperature;
A minimum value selecting unit for selecting a power applying condition in which a maximum temperature deviation between the calculated temperature of the virtual sensor and the target temperature in accordance with the power applying condition and a sum of the difference between the power and the average power of each lamp are minimized;
Wherein the plurality of lamps are operated to apply a power application condition selected by the minimum value selection unit to calculate a power deviation ratio of each of the plurality of lamps, A grouping unit for grouping into a lamp group of;
A plurality of virtual sensors corresponding to the plurality of lamp groups are set, and the maximum temperature deviation between the temperature of each of the plurality of virtual sensors and the target temperature calculated in accordance with the change of the positional condition of the plurality of virtual sensors is set to a minimum A sensor positioning unit for determining a position of each of the plurality of virtual sensors as a position to install the process sensor;
And the substrate processing apparatus.
The minimum value selection unit,
A maximum value selecting unit for calculating a temperature deviation between the temperature of each of the plurality of virtual sensors and the target temperature according to the power applying condition calculated by the sensor temperature calculating unit and selecting the maximum temperature deviation among the calculated temperature deviations;
A power calculator for calculating a power deviation between the power of each lamp and the average power according to the power application condition;
A summation unit for summing the maximum temperature deviation selected by the maximum value selection unit and the power deviation calculated by the power calculation unit according to the power application condition;
A minimum value selecting unit that selects a minimum value among a plurality of sum values summed in the summing unit according to a power applying condition and selects a power applying condition having the minimum value;
And the substrate processing apparatus.
The minimum value selection unit calculates a plurality of sum values by summing the maximum temperature deviation and the sum of the power deviations according to the change of the power application condition according to Equation (1)
And finds a power application condition having a minimum value among a plurality of sum values.
[Equation 1]
T k sp : target temperature
β: Weight constant
Wherein the grouping unit comprises:
A power deviation ratio calculating unit for calculating a power deviation ratio for each of the plurality of lamps by applying power to the plurality of lamps under the selected power applying condition;
A grouping unit for comparing the power deviation ratios of the lamps calculated by the power deviation ratio calculation unit with each other to group them into a plurality of lamps;
And the substrate processing apparatus.
In the power deviation ratio calculation unit, the respective lamp power ratios (? J1) and the average power ratios (? J1) of the plurality of lamp power ratios
&Quot; (5) "
n sp : number of output points
a j1 : power ratio of lamp to reference power
The average power ratio of the plurality of lamp power ratios?
&Quot; (6) "
p 1 : Reference power
k: calculation time (k = 1, 2, 3, ..., n sp )
A plurality of reference power deviation ratios are previously set in the grouping unit,
A power deviation ratio calculation unit for calculating a power deviation ratio for each of the lamps and a plurality of calculated power deviation ratios for each lamp; Wherein the substrate processing apparatus includes:
Wherein the sensor positioning unit comprises:
Calculating a temperature deviation between a temperature of each of the plurality of virtual sensors calculated from the sensor temperature calculating unit and a target temperature in accordance with a position changing condition of a plurality of virtual sensors that are virtually positioned at a number corresponding to the plurality of lamp groups, A deviation calculator;
A maximum temperature deviation selection unit for selecting a maximum temperature deviation among deviations between the temperatures of the plurality of virtual sensors and the target temperature under each of the position condition changing conditions;
A sensor position determination unit for determining a position change condition of a plurality of virtual sensors having a minimum value among a plurality of maximum temperature deviations selected in accordance with the positional change of the plurality of virtual sensors,
And the substrate processing apparatus.
And the sensor positioning unit finds a plurality of virtual sensor position change conditions having a minimum value among a plurality of maximum temperature deviation values according to the positional change of the plurality of virtual sensors by Equation (7).
&Quot; (7) "
Wherein the process control module is positioned by the sensor positioning unit so that the power applied to the plurality of lamp groups is measured in accordance with a temperature measured from a plurality of process sensors provided on the substrate supporting unit And the substrate processing apparatus.
Wherein the process control module includes a PID control unit and a QILC control unit.
Presetting the plurality of lamps and process sensors before performing a heat treatment process on the substrate;
Heat treating the substrate;
/ RTI >
The setting process includes:
A step of setting positions of a plurality of virtual sensors so as to be virtually located at different positions; And
Calculating a temperature of the plurality of virtual sensors;
/ RTI >
In calculating the temperature in each of the plurality of virtual sensors,
A heat treatment method using a thermal model in consideration of the distance between the virtual sensor and the lamp, thermal energy exiting from the substrate when the substrate is heated, and thermal energy held by the substrate at room temperature.
In calculating the temperatures of the virtual sensors installed at a plurality of virtual positions,
(B) of the substrate at room temperature minus the sum of the distance (r ij ) between the virtual sensor and the lamp and the thermal energy (T i 4 ) exiting the substrate upon substrate heating A heat treatment method using the formula (2).
&Quot; (2) "
t: time
i: any one of a plurality of sensors (i = 1, ..., n i )
n i : the number of sensors
j: any one of a plurality of lamps (i = 1, ..., n p )
n p : number of lamps
T i : Temperature of the sensor
r ij : Distance between lamp and sensor
G: Weight constant
P j : Power applied to the lamp
b: thermal energy of the substrate at room temperature
λ: constant
In calculating the temperatures of the virtual sensors installed at a plurality of virtual positions,
The heat treatment method for calculating the temperature in each of the plurality of virtual sensors using the thermal model of Equation (3) using the material of the thin film formed on the substrate and the adjustment factor? According to the lamination structure of different materials, .
&Quot; (3) "
eta: a constant that varies depending on the structure of the thin film formed on the substrate and the structure in which different materials are stacked
The setting process includes:
Calculating a temperature in each of the plurality of virtual sensors using Equation (2) or Equation (3) according to a power application condition change for achieving a target temperature;
Selecting a power application condition in which the maximum temperature deviation between the calculated temperature of the virtual sensor and the target temperature in accordance with the power application condition and the sum of the difference between the power and the average power of each lamp are minimized;
The plurality of lamps are operated in accordance with the selected power applying condition to calculate the power deviation ratio of each of the plurality of lamps and the plurality of lamps are divided into a plurality of lamp groups according to the power deviation ratio of each of the plurality of lamps Grouping process;
Setting positions of a plurality of virtual sensors corresponding to the plurality of lamp groups;
A step of determining a position of each of the plurality of virtual sensors having a minimum maximum temperature deviation between the temperature of each of the plurality of virtual sensors and the target temperature calculated according to the change of the positional condition of the plurality of virtual sensors ;
/ RTI >
The setting process includes:
Calculating a temperature in each of the plurality of virtual sensors using Equation (2) or Equation (3) according to a power application condition change for achieving a target temperature;
Selecting a power application condition in which the maximum temperature deviation between the calculated temperature of the virtual sensor and the target temperature in accordance with the power application condition and the sum of the difference between the power and the average power of each lamp are minimized;
The plurality of lamps are operated in accordance with the selected power applying condition to calculate the power deviation ratio of each of the plurality of lamps and the plurality of lamps are divided into a plurality of lamp groups according to the power deviation ratio of each of the plurality of lamps Grouping process;
Setting positions of a plurality of virtual sensors corresponding to the plurality of lamp groups;
Determining a position of each of the plurality of virtual sensors, in which a maximum temperature deviation between a temperature of each of the plurality of virtual sensors calculated in accordance with a change in the positional condition of the plurality of virtual sensors and a target temperature becomes minimum, as a position at which the sensor is installed;
/ RTI >
The process of selecting the power applying condition that the sum value becomes minimum may include:
Calculating a temperature deviation between a temperature of each of the plurality of virtual sensors and a target temperature according to a power application condition;
A step of finding a maximum temperature deviation among a temperature deviation between a temperature of each of the plurality of virtual sensors calculated according to each power application condition and a target temperature;
Calculating a power deviation between a power of each lamp and an average power according to a power application condition;
Summing the maximum temperature deviation and the power deviation according to the power application condition;
Searching for a power application condition having a minimum value among a plurality of sum values calculated according to a power application condition;
/ RTI >
In a process of searching for a power applying condition having a minimum value,
Wherein the sum of the maximum temperature deviation and the power deviation due to the change of the power applying condition is calculated by the equation (1) to calculate a plurality of sum values.
[Equation 1]
T k sp : Target temperature
β: Weight constant
Wherein the grouping of the plurality of lamps into the plurality of groups comprises:
Applying power to the plurality of lamps under the selected power application condition;
Calculating a power deviation ratio for each of the plurality of lamps;
Comparing the power deviation ratios calculated for each of the plurality of lamps with each other to group them into a plurality of lamps;
/ RTI >
Wherein the step of calculating the power deviation ratio comprises:
Calculating a power ratio of each lamp with respect to the reference power by using power applied to any one of the plurality of lamps as a reference power;
Calculating an average power ratio that is an average value of power ratios for the plurality of lamps;
/ RTI >
In the process of calculating the power deviation ratio,
The reference power (p 1) and power ratio (α j1) of each lamp to the average value of the average power ratio of the power ratio (α j1) of the plurality of lamps (
&Quot; (5) "
n sp : number of output points
a j1 : power ratio of lamp to reference power
The average power ratio (
&Quot; (6) "
p 1 : Reference power
k: calculation time (k = 1, 2, 3, ..., n sp )
In grouping the plurality of ramps,
Setting a plurality of reference power deviation ratios in different ranges;
The calculated power deviation ratio for each lamp
Wherein the step of determining the position of the process sensor comprises:
Setting positions of the plurality of virtual sensors such that the virtual sensors are located at virtual positions corresponding to the plurality of lamp groups;
Calculating a temperature of each of the plurality of virtual sensors in accordance with a change in the positional condition of the plurality of virtual sensors;
Calculating a deviation between a temperature of each of the plurality of virtual sensors and a target temperature calculated in accordance with a change of a position condition of the plurality of virtual sensors;
Selecting a maximum temperature deviation among deviations between the temperatures of the plurality of virtual sensors and the target temperature under each of the position condition changing conditions;
Selecting a position condition having a minimum value among the maximum temperature deviations selected in accordance with the change of the positional conditions of the plurality of virtual sensors to be the installation position of the process sensor;
/ RTI >
In the process of determining the mounting position of the process sensor,
And a position condition having a minimum value among the plurality of maximum temperature deviation values selected in accordance with the positional change of the plurality of virtual sensors is selected by Equation (7).
&Quot; (7) "
In the process of heat-treating the substrate,
Wherein the power applied to the plurality of lamp groups is controlled according to a temperature measured from the plurality of process sensors positioned and positioned.
In the process of heat-treating the substrate,
PID control method and QILC control method.
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| KR20200124161A (en) * | 2019-04-23 | 2020-11-02 | 도쿄엘렉트론가부시키가이샤 | Control method, measurement method, control device, and heat treatment apparatus |
| KR20210043048A (en) * | 2019-10-10 | 2021-04-21 | 세메스 주식회사 | Substrate processing apparatus and a substrate processing method |
| KR102467933B1 (en) * | 2021-06-10 | 2022-11-16 | 경희대학교 산학협력단 | Digital twin based temperature distribution estimating method and temperature distribution estimating apparatus |
| WO2023177496A1 (en) * | 2022-03-15 | 2023-09-21 | Applied Materials, Inc. | Uniform radiation heating control archtecture |
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| KR101719747B1 (en) | 2016-04-04 | 2017-03-24 | 에이피에스홀딩스 주식회사 | Manufacturing method for heater block assembly, Heater block assembly, And Apparatus for heat treatment |
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