KR101582631B1 - Cathode for ion implanter and ion generation device - Google Patents

Abstract

The present invention relates to an electron emission cathode for an ion implanter and an ion generating device including the same, and in accordance with the present invention, there is provided an electron emission cathode for an ion implanter, which comprises a repeller, a cathode, The present invention provides a coating structure including a semicarbide layer for applications such as thermal stabilization, abrasion protection, or deposition peel resistance for components such as a silicon wafer, a well, or a slit member, thereby enabling precise ion implantation without irregularities in ion- It is possible to uniformly reflect electrons into the arc chamber, thereby improving the decomposition efficiency of the ion source gas by increasing the uniformity of the plasma, and further improving the lifetime of the ion implanter and the ion generator including the ion generator. .

Description

[0001] The present invention relates to an electron emission cathode for an ion implanter,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron emission cathode for an ion implanter and an ion generating device including the same, and more particularly, to an electron emission cathode for an ion implanter, including a repeller, a cathode, , Or a slit member to provide a coating structure including a semicarbide layer for thermal deformation stabilization use, abrasion protection use, or deposition peeling resistance application, thereby enabling a precise ion implantation process without irregularity of the ion generating position or equipment, The present invention relates to a component for an ion implanter capable of uniformly reflecting electrons into a chamber, thereby improving the decomposition efficiency of the ion source gas by increasing the uniformity of the plasma, will be.

The manufacturing process of the semiconductor device is largely composed of a deposition process and an ion implantation process. In the deposition process, sputtering, chemical vapor deposition, or the like is used as a process of forming a conductive film or an insulating film of a semiconductor device, and a photo process is a process of patting a photosensitive resin with a photomask having a predetermined pattern as a previous stage of the etching process , And the etching process is a process of patterning the underlying conductive film or insulating film using the photosensitive resin pattern.

The ion implantation process is a process for controlling the operation characteristics of an electronic device formed on a silicon wafer. In the past, a process of doping impurities into the inside of the film using thermal diffusion has been used. However, recently, Ion implantation method in which impurities are implanted into the surface of the substrate.

The impurity doping process using the ion implantation method has an advantage that it is easier to control the concentration of the impurity than the thermal diffusion process, and is advantageous in adjusting or limiting the depth to be doped. In the ion implantation method, an ion implanter is used. The ion implanter includes an ion generator for generating ions to be doped with impurities, and an ion analyzer for controlling the kind and energy of generated ions.

The ion generating device heats the filament to emit thermoelectrons, and accelerates the emitted thermoelectrons by an electric field while colliding with the injected ion source gas to generate ions. In this case, a method of releasing the thermoelectrons is a method of directly heating a tungsten filament to emit thermoelectrons and a method of accelerating a thermoelectron emitted from a tungsten filament to a cathode to secondarily emit electrons again from the cathode. Deterioration of the filament material can be prevented and the replacement cycle of parts can be improved.

The ion generating device for the ion implanter is injected with a gas which is a source of ions, and within the arc chamber, the ion source gas collapses with electrons emitted from the cathode. Considering that the process temperature of the arc chamber is 1500 ° C. or higher, the base material of the components constituting the arc chamber may be molybdenum, tungsten, tantalum, rhenium, niobium refractory metal (refractory metal) to be used, in which case the chamber, because the weight is heavy in itself and it causes strain due to heat with a load, which causes the ion generating position the play is further an arc chamber itself twisted accurate ion implantation process This can be difficult.

For example, US Patent Publication No. 2011-0139613 discloses a prior art that uses tungsten, which is a kind of refractory metal, as a repeller for an ion implanter. The above-mentioned prior art discloses the use of tungsten or carbon as the electrode body of the repeller, but it provides improvement of structure such as miniaturization of the refeller and is independent of material improvement.

As another example, Korean Patent No. 10-0553716 discloses a prior art in which a front plate of an ion implanter is made of tungsten. Since the above-mentioned prior art document is a cause of increasing the maintenance cost of the equipment during frequent replacement of the front plate for obtaining a good beam uniformity, a new form that can solve this problem and obtain a good beam uniformity, We propose a technique of coating a tungsten thin film on the surface of a metal base material, which is the inner surface of a chamber body, after forming a desired part shape with a specific metal base material that is relatively easy to process. In this case, however, the chamber body using the metal base material is very disadvantageous in that heat is released, and in addition, when the internal temperature of the chamber body rises to 900 ° C or higher and ions continuously hit the inner wall of the chamber body, Therefore, the impurities are easily stuck and the inner wall of the chamber body is contaminated or pie phenomenon occurs. Particularly, when the temperature is overheated, the limit of the internal materials reaches to the limit, resulting in damage to the parts. A variety of coating techniques have been proposed, but the drawbacks of using expensive equipment for coating and expensive raw material powders are followed.

Further, in the case of the ion implanter, the ion beam is emitted through the slit. Due to the difference in the thermal expansion coefficient between the carbon material and the refractory metal material, deformation due to heat is caused by the load during use in a high temperature process, There is a possibility that a precise ion implantation process can not be performed due to the occurrence of deformation of the whole, and also peeling occurs at the interface between the carbon layer and the refractory metal coating layer to generate foreign particle, have.

Accordingly, it is possible to perform a precise ion implantation process without changing the ion generating position or the apparatus, and to uniformly reflect electrons into the arc chamber, thereby improving the uniformity of the plasma to improve the decomposition efficiency of the ion source gas, There is a great need to develop a repeller, an electron emission cathode, a chamber well, a slit member, and an ion generating device each including the repeller, the electron emission cathode, and the slit member.

Therefore, the first problem to be solved by the present invention is to provide a method of manufacturing a semiconductor device, which can provide thermal stabilization, wear protection, and deposition peel resistance even when the ion implanter is used for a long time without replacing parts Emitting cathode for an ion implanter.

A second object of the present invention is to provide an ion generating device including an electron emitting cathode for the ion implanter.

In order to achieve the first object of the present invention, there is provided an ion generating device for an ion implanter, comprising: a cathode side portion provided in an arc chamber of an ion generating device for an ion implanter and fixed to one side of the arc chamber, Wherein the cathode has a refractory metal material as a base material forming a part shape and has at least one surface which is an inner surface of the base material and has a semicarbide Emitting layer for an ion implanter having a layer-containing coating structure.

According to another aspect of the present invention, there is provided an ion generator for an ion implanter, comprising: a plurality of ion generators; Characterized in that the reflector has a refractory metal material as a base material forming a part shape and has a coating structure including a semicarbide layer on at least one surface to be an inner surface of the base material The repeller for the ion implanter can be provided.

According to another aspect of the present invention, there is provided a chamber well disposed inside an arc chamber for constituting an ion generating space of an ion generating device for an ion implanter, wherein one side of a chamber well constituting a slope of the arc chamber The above wells may provide a chamber well for an ion implanter having a refractory metal material as a base material forming a part shape and having a coating structure including a semicarbide layer on at least one surface which becomes an inner surface of the base material.

According to another aspect of the present invention, there is provided a slit member having a slit for discharging an ion beam from an ion generating device for an ion implanter, wherein the slit formed with the slit is a refractory A slit member for a ion implanter having a metal material and having a coating structure including a semicarbide layer on at least one surface which is an inner surface of the base material.

According to an embodiment of the present invention, the coating structure including the semicarbide layer may include a carbide structure of a refractory metal constituting a layered continuous or discontinuous monocarbide layer of a refractory metal on a semicarbide continuous or discontinuous layer of the refractory metal May include.

According to another embodiment of the present invention, the semicarbide layer-containing coating structure may include a crystal structure of epsilon phase (ε-Fe ₂ N type) and a crystal phase of a β phase (PbO ₂ type, Mo ₂ C type or C ₆ type) And a continuous or discontinuous layer having a hexagonal high-phase crystal structure on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of a carbide structure of a refractory metal constituting continuous or discontinuous layered .

According to another embodiment of the present invention, the weight ratio Wm / Ws of the content Wm of the crystal structure constituting the semiconductive layer of the refractory metal and the content Ws of the crystal structure constituting the monocarbide layer of the refractory metal is X , X is 5 or less (where Wm and Ws are values obtained by polyphase analysis by EBSD (electron back-scattered diffraction) method).

According to still another embodiment of the present invention, the content Ww of the base material, the content Wm of the crystal structure constituting the semicarbide layer of the refractory metal as the coating structure containing the semicarbide layer, and the content Wm of the refractory metal monocarbide layer The weight ratio Ww: Wm: Ws of the content Ws of the crystal structure is in the range of 90 to 95: 0.8 to 4: 9.2 to 1 (wherein Ww, Wm and Ws are obtained by polyphase analysis by EBSD (Electron Back-Scattered Diffraction) Value).

According to another embodiment of the present invention, the semicarbide-containing coating layer may have a minimum layer thickness of 2 mu m or more and a maximum layer thickness of 300 mu m or less.

According to another embodiment of the present invention, the terminal portion may have a refractory metal material as a base material forming a part shape, and a semicarbide layer-containing coating structure on at least one surface of the base material.

In order to achieve the second object, the present invention provides an ion generating device including an electron emission cathode for an ion implanter.

The present invention can be applied to a component such as a repeller, a cathode, a chamber well, or a slit member constituting an arc chamber of an ion generating device for ion implantation used in the production of a semiconductor device of the present invention, By providing a coating structure containing a semicarbide layer, it is possible to precisely implant the ion implantation process without the ion generating position being distorted or the apparatus being distorted, and to uniformly reflect electrons into the arc chamber, thereby increasing the uniformity of the plasma, Not only improves the decomposition efficiency, but also significantly improves the service life compared to existing parts.

1 shows a structure of an ion generating device for an ion implanter.
2 shows the structure of the repeller for the ion implanter.
3 shows the structure of the electron emission cathode for the ion implanter.
4 is a view for explaining a gas density distribution inside the arc chamber.
5 shows the structure of the slit member for the ion implanter.
FIG. 6 is a graph showing the results of surface analysis according to EBSD (Electron Back Scattered Diffraction) in which a monocarbide layer has a layered structure on a semicarbide layer as a coating structure including a semicarbide layer on the surface of a tungsten base material according to an embodiment of the present invention. (A) is a photograph using a graphite sheet, and (b) is a photograph using a carbon black powder.
FIG. 7 is a cross-sectional view illustrating a coating structure including a semicarbide layer on the surface of a tungsten base material according to an embodiment of the present invention. FIG. 7 is a cross-sectional view of an XRD layer showing a layer structure of a monocarbide layer on a semi- Diffraction analysis graph.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention relates to a method for stabilizing thermal deformation of a component such as a reflower, a cathode, a chamber well, or a slit member constituting an arc chamber of an ion generating device for ion implantation used for manufacturing a semiconductor device, By providing a coating structure containing a semicarbide layer, it is possible to precisely implant the ion implantation process without the ion generating position being distorted or the apparatus being distorted, and to uniformly reflect electrons into the arc chamber, thereby increasing the uniformity of the plasma, To a component for an ion implanter capable of improving not only the decomposition efficiency but also the lifetime compared to the existing parts, and an ion generating device including the same.

Next, Fig. 1 shows a structure of an ion generating device for an ion implanter. 1, the ion generating device 100 includes an arc chamber 104 forming a predetermined space, a cathode 102 installed on one side of the arc chamber, a filament 101 installed in an inner space of the cathode, And a repeller 103 provided opposite to the cathode.

The filament 101 may be made of a metal having a high melting point, such as tungsten. When the current flows from a power source connected to the outside, the filament 101 is heated to a predetermined temperature and discharges thermoelectrons to the outside. The cathodes 102 are spaced apart from the filament 101 by a predetermined distance. The cathodes of the external power source are connected to the cathodes, and the electrons emitted from the filaments by the electric field formed between the filament and the cathode collide with the cathodes, Electrons are again emitted from the surface. The arc chamber 104 forms a predetermined space in a direction in which electrons are emitted from the cathode. In the arc chamber 104, a gas injection unit 105 is formed so as to inject a gas and a carrier gas used for doping the impurity in one direction, A slit member 106 is formed as an ion emitting portion through which gases and ions are emitted.

A power source is connected to the arc chamber 104 to accelerate the electrons emitted from the cathode 102. A repeller 103 is provided on one side of the arc chamber facing the cathode 102. The repeller 103 functions to distribute ions in a limited space while pushing accelerated electrons emitted from the cathode, Or remain floating. The magnets 110a and 110b may be disposed around the arc chamber 104. The magnet may be an electromagnet and electrons moving along the electric field formed inside the arc chamber 104 may be rotated by a magnetic field . The rotational motion of electrons increases the ionization efficiency by increasing the collision probability of electrons and gas particles. Although not shown in the figure, the slit member 106 serving as an ion emitting portion is provided with an analyzing device for accelerating ions using an electric field and filtering ions having a specific kind and specific energy.

The slit member 106 may be provided on the upper surface of the ion chamber 104 or may be provided on the lower surface of the ion chamber 104, (105) may be provided.

Next, Fig. 2 shows the structure of the repeller for the ion implanter. Referring to FIG. 2, the repeller 103 for the ion implanter includes a reflecting portion 103a and a terminal portion 103b. The reflective portion 103a may be formed in a shape of a plate (for example, a circular plate) having a predetermined area and thickness. The terminal portion 103b serves as a terminal that is electrically connected to the reflective portion and to which a predetermined voltage can be applied and a fixing portion for fixing the repeller 103 in the arc chamber 104. [

The repeller 103 for the ion implanter of the present invention is provided with a reflection portion 103a provided inside the arc chamber 104 of the ion generating device for ion implanter and installed opposite to the cathode 102 of the ion generating device, And a terminal portion 103b extending from the reflecting portion 103a and to which a predetermined voltage is applied. The reflecting portion 103a is made of Mo (molybdenum), W (tungsten) ), A refractory metal material such as Ta (tantalum), Re (rhenium) or Nb (niobium), and has a coating structure including a semicarbide layer on at least one surface which is an inner surface of the base material do.

Next, Fig. 3 shows the structure of the electron-emitting cathode 102 for an ion implanter. 3, the cathode 102 includes a cathode side portion 102a that provides an internal space through which the filament 101 can be installed, and a cathode front portion 102b that provides a surface that emits electrons.

The cathode side portion 102a may have a tube shape having a predetermined length, and a cathode internal space 102d is formed therein, and a coupling portion 102c is formed therein.

In one example, the cathode front portion 102b has a depressed surface and may include a cathode front edge portion 102b, a cathode recess inclined portion (not shown), and a cathode recessed flat portion (not shown). The cathode front edge portion 102b is formed in the outer peripheral region of the cathode front portion. The cathode front edge portion 102b has a predetermined width at the boundary of the outer peripheral region and provides a flat surface in the direction of the arc chamber, . The cathode front edge portion 102b has a flat surface to prevent the emission of electrons from being concentrated in one portion. For example, in the structure in which the cathode front edge portion is not formed and the cathode recess inclined portion is formed immediately, So that the emission of electrons can be concentrated only on the rim portion. The inclined portion of the cathode depression forms an inclination toward the center of the front surface of the cathode. This inclined surface can increase the area of the surface of the cathode where the electron is emitted, and the electron emission from the inclined surface is made toward the center portion of the cathode, So that electrons are accelerated to a region having a high density. It is preferable that the cathode depression inclined portion is formed concavely in the direction of the arc chamber. In this structure, the effect of electron movement in the direction where the density of the doping gas is high can be maximized by controlling the discharge position of electrons. The cathode recessed flat portion is formed at the center portion of the cathode front portion and has a flat surface. The ionization efficiency can be improved by adjusting the ratio of the width of the cathode recessed inclined portion to the radius of the cathode recessed flat portion. In the case where the front surface of the cathode is circular and the cathode depression inclined portion and the cathode depression flat portion are concentric, the ratio of the width of the cathode depression flat portion to the width of the cathode depression inclination portion may be, for example, in the range of 1: 0.5 to 1: The effect of the electron emission direction control by the inclined portion and the ionization efficiency can be improved within the above range. The recessed depth of the cathode recessed flat portion may be in the range of 0.5 to 1.5 times the radius of the cathode recessed flat portion, and the cathode area increasing effect and the ionization efficiency may be improved within the above range.

The cathode 102 of the present invention is installed inside the arc chamber 104 of the ion generating device for the ion implanter and is fixed to one side of the arc chamber 104 and has a space in which the filament 101 is installed. An electron emission cathode comprising a side portion and a cathode front portion exposed in the direction of the arc chamber and having a surface for emitting electrons, wherein the cathode has a refractory metal material as a base material forming a part shape, An electron emission cathode for an ion implanter having a coating structure comprising a semicarbide layer on at least one surface thereof.

Next, Fig. 4 is a view for explaining the gas density distribution in the arc chamber. 4, a chamber well 104a, a gas injection unit 105, and a slit member 106 are formed in the arc chamber 104 as four ionizers, Part of the gas and the carrier gas are ionized and discharged to the ion emitting portion 106. At this time, a gas pressure difference is generated in the arc chamber 104, and the density of the gas (pressure of the gas) in the region near the gas injection unit 105 becomes high. Therefore, when the amount of electrons accelerated to a region where the density of the gas is high is high, the ionization probability increases.

The chamber well 104a of the present invention is a chamber well disposed inside the arc chamber for constituting the ion generating space of the ion generating device for an ion implanter, wherein wells of one or more chambers constituting slopes of the arc chamber are formed in the shape of a part And has a coating structure including a semicarbide layer on at least one surface which becomes an inner surface of the base material.

Next, Fig. 5 shows a structure of a slit member for an ion implanter. 5, the slit member 106 for an ion implanter includes a slit portion 106b in which a slit 106a is formed and an insertion hole (not shown) into which the slit portion 106b can be coupled, And the slit portion 106b and the frame 106c can be interconnected by a connecting member 106d. The connecting member 106d may be a screw type, and a plurality of screw holes (not shown) may be formed in the slit portion 106b and the frame 106c, respectively, for inserting the screw. The slit portion 106b and the frame 106c may be made of different materials or may be made of the same material.

The slit member 106 of the present invention is a slit member having a slit for discharging an ion beam from an ion generator for an ion implanter, wherein the slit portion having the slit has a refractory metal material as a base material for forming a component shape, And a coating structure including a semicarbide layer on at least one surface which becomes an inner surface of the base material.

The term " coating structure comprising a semicarbide layer " as used herein, unless otherwise specified, refers to a layered structure of a semicarbide layer as a lower layer of coating, including the use of additional additives or application of a protective layer / And has characteristics that provide improved heat distortion stability, wear protection, lowering of the delamination of the deposition material, and phase stability without necessity of the above-mentioned heat treatment.

The coating structure including the semicarbide layer may have, for example, a carbide structure of a refractory metal constituting a layered continuous or discontinuous monocarbide layer of a refractory metal on a semicarbide continuous or discontinuous layer of the refractory metal, According to the structure, it is possible to provide improved properties for thermal deformation stability, abrasion protection properties and deposition peel resistance compared to a single layer of monocarbide or a single layer of monocarbide.

As another example of the coating structure including the semicarbide layer, a coating structure including a semicarbide layer-containing coating structure may be formed by coating a substrate with a coating solution containing ₁ ( _b ) selected from the group consisting of an epsilon phase (ε-Fe ₂ N type) crystal structure and a β phase (PbO ₂ type, Mo ₂ C type or C ₆ type) A continuous or discontinuous layer having a hexagonal grain-like crystal structure on a continuous or discontinuous layer having a crystal structure of more than two kinds may have a structure constituting the layer continuously or discontinuously, and such different crystal structure may be a continuous or discontinuous layer According to the constituting structure, it is possible to further provide the property with improved phase stability. The double layer preferably has a structure in which a continuous layer having a hexagonal high-phase crystal structure on the continuous layer having the epsilon phase (epsilon -Fe ₂ N type) crystal structure continuously forms a layer.

X may be 5 or less when the weight ratio Wm / Ws of the content Wm of the crystal structure constituting the refractory metal semicarbide layer and the content Ws of the crystal structure constituting the refractory metal monocarbide layer is X, Within this range, it is possible to provide improved heat distortion stability, abrasion protection properties and deposition resistance. Here, Wm and Ws are values obtained by polyphase analysis by EBSD (Electron Back Scattered Diffraction) method.

The X may be, for example, in the range of 0.01 to 5, 0.03 to 4, 0.1 to 4, 0.05 to 0.3 or 0.1 to 0.2.

The weight Ww of the content Ww of the refractory metal base material, the content Wm of the crystal structure constituting the refractory metal semicarbide layer as the above-mentioned semicarbide layer-containing coating structure, and the content Ws of the crystal structure constituting the refractory metal monocarbide layer Ww: Wm: Ws can be in the range of 90 to 95: 0.8 to 4: 9.2 to 1, and within this range, it is also possible to simultaneously provide improved heat distortion stability, wear protection properties and deposition peel resistance. Here, Ww, Wm and Ws are values obtained by polyphase analysis by EBSD (Electron Back-Scattered Diffraction).

The Y may be, for example, 91 to 94: 0.8 to 3: 8.2 to 3.

The continuous layer having the hexagonal grain-like crystal structure is a peak in which the first peak having the maximum peak intensity (refer to the graph internal peak in FIG. 7) in the XRD diffraction analysis measurement is in the range of 35 to 36 degrees, and the second peak And the third peak has a peak in the range of 31 to 32 degrees.

The continuous layer having at least one crystal structure selected from the group consisting of the epsilon phase (ε-Fe ₂ N type) crystal structure and the β phase (PbO ₂ type, Mo ₂ C type or C ₆ type) The first peak having the maximum peak intensity (refer to the lower graph in the graph in FIG. 7) is in the range of 69.5 to 70.0, the second peak is in the range of 39.5 to 40.0, The peak may have a peak in the range of 52.0 DEG to 52.5 DEG.

The semicarbide layer can provide sufficiently improved heat distortion stability, abrasion protection property, delamination resistance, and phase stability even with a minute thickness. The semicarbide layer has a minimum layer thickness of 2 탆 or more and a maximum layer thickness of 300 탆 or less , Or 200 mu m or less. As used herein, the terms " minimum layer thickness " and " maximum layer thickness " refer to the numerical value of the portion with the smallest thickness and the portion with the maximum thickness, among the various portions of the layer, unless otherwise specified.

The monocarbide layer-containing coating structure may be, for example, a monocarbide layer having a layer thickness of 1 to 10 mu m on a semicarbide layer having a layer thickness of 1 to 50 mu m, and within this range It is possible to provide both an improved wear protection property and a deposition peeling resistance at the same time.

As a specific example, the semicarbide layer-containing coating structure may have a layered structure of monocarbide layers having a layer thickness of 1 to 6 mu m on the semicarbide layer having a layer thickness of 1 to 8 mu m.

Components such as the repeller 103, the cathode 102, the chamber well 104a, or the slit member 106 among components constituting the arc chamber 104 of the ion generating device 100 for the ion implanter , And when a refractory metal material is used as a base material forming a part shape of one or more parts selected from among a plurality of parts selected from the group consisting of the above-mentioned semicarbide layer-containing coating structure on one or more surfaces of the base material, The residual parts constituting the ion chamber 104 may be made of a refractory metal material as a base material or may be made of a material having a coating structure including a semicarbide layer on the surface of a refractory metal base material that becomes the inner surface as described above, Or a known material such as carbon and hydrogen compounds.

The above-mentioned coating structure including a semicarbide layer may be formed by, for example, shaping a selected part using a refractory metal material as a base material and then heat-treating the at least one surface of the base material with an element containing carbon to form a layered coating layer containing a semi- .

As an example of the heat treatment with the carbon-containing element, a graphite sheet or a carbon black powder may be used to carry out carburization or chemical vapor deposition, and a structure having a multilayer coating layer including the semicarbide layer as a coating minimum layer may be formed.

The multi-layer coating layer containing the semicarbide layer may have a minimum layer thickness of 2 탆 or more and a maximum layer thickness of 300 탆 or less.

The heat treatment with the carbon-containing element may be performed, for example, under a driving condition in which a monocarbide layer is formed on the semicarbide layer having a layer thickness of 1 to 30 mu m to a thickness of 1 to 10 mu m to form a multilayer coating layer .

The heat treatment with the carbon-containing element is performed, for example, under an operating condition that allows the monocarbide layer to form a layered coating layer with a layer thickness of 1 to 6 mu m on the semicarbide layer having a layer thickness of 1 to 8 mu m May be more preferable.

As a specific example, under the vacuum or inert gas atmosphere, the maximum temperature is 1100 to 2200 ° C, the heating rate is 1 to 100 ° C / min, and the dwell time is 0 to 30 hours (Here, 0 sec means cooling immediately), and it may be controlled within a known range depending on the material of the repeller or the like. Operating conditions (heating pressurized condition) of the chemical vapor deposition is 900 ~ 2200 ℃ lower than the atmospheric pressure at a temperature of 10 ^- and a pressure range of less than ² torr ~ 760torr, is hydrogen and the compound ratio of hydrogen and carbon 70: 30 to 99.9: 0.1, and the reaction time may be in the range of 0 second to 30 hours, and the chemical vapor deposition process may be carried out. The reaction temperature may be controlled within a known range depending on the material of the repeller, etc.

For reference, the process of depositing the ion source gas decomposed in the arc chamber on the surface of the reweller first increases the area of the deposition film due to the deposition in a partial region, and then a uniform film as a whole is formed while meeting the different deposition films. At this time, the separated form of the vapor-deposited film may be peeled off, or may be peeled off while a crack is generated in the uniform vapor-deposited film. When the component for an ion implanter of the present invention has a refractory metal material as a base material forming a part shape and has a coating structure including a semicarbide layer on one or more surfaces of the base material, such a peeling phenomenon is effectively prevented.

Therefore, it is possible to provide a component for stabilizing thermal deformation, a protection for abrasion, or a deposition peeling resistance, for a component such as a repeller, a cathode, a chamber well or a slit member constituting an arc chamber of an ion generating device for ion implantation, It is possible to precisely implant an ion implantation process without any irregularity of the ion generating position or equipment, and to uniformly reflect electrons into the arc chamber by providing a coating structure including a semicarbide layer, thereby increasing the uniformity of the plasma, Not only can it improve the decomposition efficiency, but also can significantly improve the service life compared to existing parts.

Various embodiments of the present invention and effects thereof will be described below using embodiments. The following examples illustrate the invention and are not intended to limit the scope of the invention.

Example  One

A reflector 103 having a circular surface with a radius of 12 mm as the repeller 103 and a cathode 102 having a circular surface with a radius of 10.85 mm are provided opposite to both side walls, Generating device. In this case, the cathode front portion 102b of FIG. 3 is formed by using a tungsten material as a base material. A graphite sheet is placed on a surface of a tungsten base material serving as an inner surface of the cathode front portion 102b as a material containing carbon, A layered coating structure in which a continuous or discontinuous layer of tungsten monocarbide is continuously or discontinuously layered on a continuous or discontinuous layer of tungsten semi-carbide by heat treatment at a speed of 4.5 ° C / min and a holding time of 15 hours without application of an intermediate layer / And then shaped.

6 (a) is a photograph of a surface analysis according to EBSD (Electron Back Scattered Diffraction, JEOL, TSL model) of a coating material in which a tungsten monocarbide continuous or discontinuous layer is continuously or discontinuously layered on the tungsten semicarbide continuous or discontinuous layer Respectively. As shown in FIG. 6 (a), it was confirmed that a continuous or discontinuous layer of tungsten semicarbide was formed on the tungsten layer, and a continuous or discontinuous layer of tungsten monocarbide was continuously or discontinuously formed on the tungsten layer. Actually, as a result of phase separation through surface analysis according to EBSD, the coating structure containing the semicarbide layer has a multilayer coating structure in which a monocarbide layer has a layer thickness of 3 탆 or less on a semicarbide layer having a layer thickness of 8 탆 or less . The tungsten semicarbide was identified as an epsilon phase (ε-Fe ₂ N type) crystal structure, and the tungsten monocarbide was identified as a hexagonal phase (h-WC) crystal structure (see FIG. 7).

The content of the tungsten layer (Ww) was 0.913 and the content of the crystal structure (Ws) of the tungsten semicarbide layer was 0.079 , And the content of the crystal structure (Wm) of the tungsten monocarbide layer was 0.008, and the calculated weight ratio (Ww: Wm: Ws) was 91.3: 0.8: 7.9.

As a result of XRD diffraction analysis, the coating structure in which the tungsten monocarbide layer is layered on the tungsten semicarbide layer has an epsilon phase (ε-Fe ₂ N type) crystal in the XRD penetration depth region (~ 3 μm) Structure or a beta phase (PbO ₂ type, Mo ₂ C type or C ₆ type) crystal structure, or the like, a continuous or discontinuous layer having a hexagonal grain-like crystal structure on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of Layered coating structure was confirmed to be continuous or discontinuous.

Specifically, as shown in the graph inner peak of FIG. 7, the tungsten monocarbide continuous or discontinuous layer is a peak in which the first peak having the maximum peak intensity in the XRD diffraction analysis measurement is in the range of 35 to 36 degrees, 2 peaks were in the range of 48 to 49 degrees, and the third peak was in the range of 31 to 32 degrees.

7, when the peak of tungsten monocarbide and tungsten semicarbide is superimposed on the tungsten semicarbide continuous or discontinuous layer in XRD measurement, when the peak of tungsten semicarbide is not observed, the maximum peak The first peak having the intensity in the range of 69.5 DEG to 70.0 DEG and the second peak in the range of 39.5 DEG to 40.0 DEG and the third peak in the range of 52.0 DEG to 52.5 DEG It looked.

The fraction calculated from the phase separation result through the surface analysis according to the EBSD is expressed by a weight ratio Wm / W of the content Wm of the crystal structure constituting the tungsten monocarbide layer and the content Ws of the crystal structure constituting the tungsten semi- When X is applied to a factor X of Ws (hereinafter referred to as X), it is possible to calculate that X is 0.1 as 0.008 / 0.079.

Example 2

An ion generating device for an ion implanter having the structure as shown in Fig. 1 was fabricated using a repeller and a cathode having the same radius as those of the first embodiment. In this case, after the cathode front part 102b of FIG. 3 is formed using a tungsten material as a base material, a carbon black powder is used as a carbon material on the surface of a tungsten base material serving as an inner surface, The same process as in Example 1 was carried out except that, during the heat treatment, the material having a two-layer coating structure in which tungsten monocarbide continuous or discontinuous layers were continuously or discontinuously layered on a tungsten semicarbide continuous or discontinuous layer was used And repeated.

6 (b) shows a photograph of a surface analysis according to EBSD (Electron Back Scattered Diffraction, JEOL, TSL model) of a coating material in which a tungsten monocarbide continuous or discontinuous layer is continuously or discontinuously layered on the tungsten semicarbide continuous or discontinuous layer Respectively. As shown in FIG. 6 (b), it was confirmed that a continuous or discontinuous layer of tungsten semicarbide was formed on the tungsten layer, and a continuous or discontinuous layer of tungsten monocarbide was continuously or discontinuously formed on the tungsten layer. Actually, as a result of phase separation through surface analysis according to EBSD, it was confirmed that the above-mentioned semicarbide layer had a multilayered structure of monocarbide layer with a layer thickness of 6 탆 or less on a semicarbide layer having a layer thickness of 7 탆 or less . The tungsten semicarbide was identified as an epsilon phase (ε-Fe ₂ N type) crystal structure, and the tungsten monocarbide was identified as a hexagonal phase (h-WC) crystal structure (see FIG. 7).

The content of the tungsten layer (Ww) was 0.912 and the content of the crystal structure (Ws) of the tungsten semicarbide layer was 0.074 , And the content of the crystal structure (Wm) of the tungsten monocarbide layer was 0.014%, and the calculated weight ratio (Ww: Wm: Ws) was 91.2: 1.4: 7.4.

The coating structure in which the tungsten monocarbide layer is layered on the tungsten semicarbide layer is characterized in that, as a result of XRD diffraction analysis, the epsilon phase (ε-Fe ₂ N type) crystal structure And a beta phase (PbO ₂ type, Mo ₂ C type, or C ₆ type) crystal structure, and the like, or a continuous or discontinuous layer having a hexagonal grain-like crystal structure on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of A continuous or discontinuous layer having the hexagonal grain-like crystal structure described above can be confirmed, and in particular, the continuous or discontinuous layer having the hexagonal grain-like crystal structure is a peak in which the first peak having the maximum peak intensity in the XRD diffraction analysis measurement is in the range of 35 to 36 degrees, It is confirmed that the peak is a peak existing in the range of 49 to 50 degrees and the third peak is present in the range of 31 to 32 degrees.

The fraction calculated from the phase separation result through the surface analysis according to the EBSD is expressed by a weight ratio Wm / W of the content Wm of the crystal structure constituting the tungsten monocarbide layer and the content Ws of the crystal structure constituting the tungsten semi- When applied to the factor X of Ws, it can be calculated that X is 0.19 as 0.014 / 0.074.

Comparative Example 1

The ion generator for ion implanter having the structure shown in FIG. 1 was manufactured in the same manner as in Example 1 except that a tungsten material having no semicarbide layer coating structure was used as a base material (The factor X of Example 1 is 0, and the weight ratio of Ww: Wm: Ws is 100: 0: 0).

Comparative Example 2

The ion generating device for the ion implanter having the structure as shown in FIG. 1 was fabricated in the same manner as in Example 1, and the surface of the semicarbide layer-containing coating structure on the cathode front portion formed according to Example 1 was subjected to EBSD (Electron Back Scattered Diffraction) A mechanical polishing process such as chemical electrolytic polishing or polishing, which is performed for analysis, was applied to remove the top tungsten monocarbide layer and provide a structure in which the tungsten semicarbide layer was exposed (Factor X of Example 1 is 0 ).

As a result of phase separation through surface analysis according to the EBSD, it was confirmed that the tungsten semicarbide layer had a layer thickness of 10.435 탆 or less.

As a result of calculating the fraction using the computer software from the result of phase separation through surface analysis according to the above EBSD, the content (Ww) of the tungsten layer was 0.879, the crystal structure (Ws) of the tungsten semi- The content was found to be 0.121 parts, and the calculated weight ratio (Ww: Wm: Ws) was found to be 87.9: 12.1: 0.

The tungsten semicarbide was identified as an epsilon phase (ε-Fe ₂ N type) crystal structure. When the peak of tungsten monocarbide and tungsten semicarbide are superimposed upon XRD measurement and the peak of tungsten semicarbide is not observed in the layer having the epsilon phase (ε-Fe ₂ N type) crystal structure, the layer having the maximum peak intensity 1 peak is present in the range of 69.5 ° to 70.0 °, the second peak is present in the range of 39.5 ° to 40.0 °, and the third peak is present in the range of 52.0 ° to 52.5 ° .

Experimental Example 1

When the ion generating apparatuses of Examples 1 to 2 and Comparative Examples 1 and 2 are operated in an environment using BF ₃ as the ion source gas, ions in the arc chamber ionized from the ion source gas are supplied to the extraction electrode and mass analyzer After adjusting the beam size, the number of ions was measured through the Faraday system. At this time, irregular ion number is measured when the material of the arc chamber is thermally deformed due to thermal deformation. When the number of ions to be injected is constant, the number of irons is determined to be good. And so on.

In the case of positive ions existing in the arc chamber, collisions are made on the cathode and / or repeller side of the cathode, and on the wall surface of the arc chamber, which is an anode in the case of anion, so that the sputtering phenomenon occurs, As a result of the development, deposits are formed around the inside of the arc chamber. When the deposition material falls between the anode and the cathode, an anode and a cathode are electrically connected to each other. An electrical short occurs in the arc chamber. . After the electrical short circuit, the operation of the ion generating device was stopped, and the number of times of the process was measured to determine the wear protection characteristic.

The results measured in the ion generating devices of Examples 1 to 2 and Comparative Examples 1 to 2 are summarized in Table 1 below.

division Example 1 Example 2 Comparative Example 1 Comparative Example 2 Thermal Deformation Protection Characteristics Good Good Good Good Wear protection characteristics
(Number of processes) 223 times 245 times 196 times 207 times

As can be seen from the results of Experimental Example 1, it was confirmed that the Examples had equivalent thermal strain stability as Comparative Examples, and the wear protection properties were improved as compared with Comparative Examples.

Experimental Example 2

Beam current (unit: mA) was measured in order to compare the generation efficiency of ions while operating the ion generating devices of Examples 1 to 2 and Comparative Examples 1 to 2. At this time, the arc chamber was 40 mm wide, 105 mm long, 40 mm high, 85 mm away from the repeller, and BF3 gas was used and the pressure was 2.5 torr. The voltage supplied to the arc chamber was supplied at 80V, the current supplied to the filament was 160A, and the voltage supplied to the cathode and the refeller was 600V.

The results measured in the ion generating devices of Examples 1 to 2 and Comparative Examples 1 to 2 are summarized in Table 2 below.

Example 1 Example 2 Comparative Example 1 Comparative Example 2 Beam current 22.0mA 23.2 mA 20.0mA 21.2 mA

Referring to Table 2, it was confirmed that the ion generation efficiency of the Examples was higher than that of Comparative Example 1, and the ion generation efficiency was relatively increased particularly in Example 2.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, the embodiments described in the present invention are not intended to limit the scope of the present invention but to limit the scope of the present invention. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: ion generating device 101: filament
102: cathode 102a: cathode side
102b: cathode front edge portion 102c: fastening portion
102d: Cathode inner space 103: Repeller
103a: Reflecting portion 103b: Terminal portion
104: arc chamber 104a: chamber well
105: gas injection unit 106: slit member
106a: Slit 106b:
106c: frame 106d: connecting member
110a, 110b: magnet

Claims (7)

A cathode side portion provided inside the arc chamber of the ion generating device for an ion implanter and fixed to one side of the arc chamber and having a space in which a filament is installed; An electron emission cathode comprising a front portion, wherein the cathode has a refractory metal material as a base material forming a part shape and has a coating structure including a semicarbide layer on at least one surface to be an inner surface of the base material,
The coating structure comprising a semicarbide layer comprises a carbide structure of a refractory metal constituting a layered continuous or discontinuous monocarbide layer of a refractory metal on a semicarbide continuous or discontinuous layer of the refractory metal,
When X is the weight ratio Wm / Ws of the content Wm of the crystal structure constituting the refractory metal semicarbide layer and the content Ws of the crystal structure constituting the monocarbide layer of the refractory metal, , And Wm and Ws are values obtained by polyphase analysis by an EBSD (Electron Back-Scattered Diffraction) method. delete The method according to claim 1,
Wherein the semicarbide layer-containing coating structure is a continuous or discontinuous layer having a hexagonal grain-like crystal structure on a continuous or discontinuous layer having at least one crystal structure selected from the group consisting of an epsilon crystal structure and a beta phase crystal structure, Wherein the electron emission cathode comprises a refractory metal carbide structure forming a layered structure. delete The method according to claim 1,
The weight ratio Ww of the content Ww of the base material, the content Wm of the crystal structure constituting the semicarbide layer of the refractory metal and the content Ws of the crystal structure constituting the monocarbide layer of the refractory metal as the coating structure including the semi- : Wm: Ws is 90 to 95: 0.8 to 4: 9.2 to 1 (wherein Ww, Wm and Ws are values obtained by polyphase analysis by EBSD (Electron Back-Scattered Diffraction)). Electron emission cathode for injector. The method according to claim 1,
Wherein the semicarbide-containing coating layer has a minimum layer thickness of 2 占 퐉 or more and a maximum layer thickness of 300 占 퐉 or less. An ion generating device comprising an electron emitting cathode for an ion implanter according to claim 1.

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