KR101550913B1 - 3 fabrication of vertical structured light emitting diodes using group 3 nitride-based semiconductors and its related methods - Google Patents

Abstract

The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method of manufacturing the same, and includes: a partial n-type electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the partial n-type electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.

The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a method of manufacturing the same. A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the front n-type electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed below the p-type electrode structure, the light generation efficiency and the external quantum efficiency of the nitride based active layer can be increased.

In particular, the present invention provides a method of manufacturing a group III nitride-based semiconductor light emitting diode device using a sandwich-structured wafer bonding and a photon-beam.

Group III nitride-based semiconductor light emitting diode, light emitting structure for light emitting diode element, nitride current injection layer, reflective current spreading layer, superlattice structure, sacrificial separation layer, wafer bonding layer, wafer bonding of sandwich structure, current blocking structure A trench, a p-type electrode structure, a p-type electrode structure, a heat sink support, a substrate separation,

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a group III nitride-based semiconductor light-emitting diode device having a vertical structure and a fabrication method of the group III nitride-based semiconductor light-

The present invention relates to a method of manufacturing a semiconductor device having a vertical structure using a single crystal group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) Group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same. More specifically, a growth substrate wafer on which a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device including a p-type electrode structure is grown on a growth substrate, and a wafer substrate of a sandwich structure developed by the present inventor The present invention relates to a method of fabricating a group III nitride-based semiconductor light-emitting diode device having vertical structure by combining a wafer to wafer bonding process and a lift-off process.

Recently, a light emitting diode (LED) device using a group III nitride-based semiconductor single crystal has been used as a nitride-based active layer. In x Al y Ga 1-xy N (0? X, 0? Y, x + ) The material band has a wide band gap. In particular, according to the composition of In, it is known as a material capable of emitting light in the entire region of visible light, and ultraviolet light can be generated in a microwave region depending on the composition of Al. The light emitting diode manufactured using the light emitting diode, Devices for backlighting, medical light sources including white light sources, and the like, have been widely used, and as the range of applications is gradually expanding and increasing, the development of high quality light emitting diodes is becoming very important.

Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device manufactured from the group III nitride-based semiconductor material is generally grown on an insulating growth substrate (typically, sapphire) -5 group compound semiconductor light emitting diode device, two electrodes of the LED device facing each other on the opposite sides of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the upper part of the crystal growth material. The conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIGS. 1 to 4. FIG.

1, a group III nitride-based semiconductor light-emitting diode device includes a sapphire growth substrate 10 and a lower nitride-based clad layer 10 made of an n-type conductive semiconductor material grown on the growth substrate 10 A nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 may be composed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayers, Is a group III nitride-based In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayer composed of different compositions of a multi-quantum well structure . The upper nitride-based cladding layer 40 may be composed of a semiconductor multilayer of p-type In x Al y Ga 1-x-y N (0? X, 0? Y, x + y? 1) In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layers 20, 30, and 40 formed of the Group III nitride-based semiconductor single crystal are formed by a device such as MOCVD, MBE, HVPE, sputter, . ≪ / RTI > In order to improve the lattice matching with the sapphire growth substrate 10 prior to the growth of the n-type In x Al y Ga 1-xy N semiconductor as the lower nitride-based cladding layer 20, The buffer layer 201 may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both electrodes of the LED device must be formed on the same top surface in the direction of growth of the monocrystal semiconductor. For this purpose, the upper nitride-based clad layer 40 and the nitride- A part of the upper surface region of the lower nitride-based clad layer 20 is exposed to the atmosphere by etching (i.e., etching) a part of the active layer 30 to form the n-type In an n-type ohmic contact interface electrode and an electrode pad 80 are formed on the upper surface of the x Al y Ga 1-xy N semiconductor.

In particular, since the upper nitride-based clad layer 40 has a relatively high sheet resistance due to a low carrier concentration and a small mobility, An additional material capable of forming the ohmic contact current spreading layer < RTI ID = 0.0 > 501 < / RTI > On the other hand, U.S. Patent No. 5,563,422 discloses a p-type In x Al y Ga 1-xy N (40) cladding layer which is a top nitride-based cladding layer 40 located on the upper layer of the light emitting structure for a group III nitride- A nickel-chromium oxide layer is formed to form an ohmic contact current spreading layer 501 which forms an ohmic contact interface having a low contact resistance in the vertical direction before the p-type electrode 80 is formed on the upper surface of the conductor. Gold (Ni-O-Au).

The ohmic contact current spreading layer 501 is formed on the upper surface of the p-type In x Al y Ga 1-xy N semiconductor which is the upper nitride-based cladding layer 40 while improving the current spreading in the horizontal direction , An ohmic contact interface having a low noncontact resistance in the vertical direction can be formed and current injection can be performed effectively, thereby improving the electrical characteristics of the light emitting diode device. However, the ohmic contact current spreading layer 501 made of oxidized nickel-gold shows an average transmittance as low as 70% even after the heat treatment, and the low light transmittance is lower when the light generated from the light emitting diode device is emitted to the outside , And absorbs a large amount of light, thereby reducing the overall external luminous efficiency.

As described above, in order to obtain a high-luminance light-emitting diode device through a high light transmittance of the ohmic contact current spreading layer 501, a variety of semiconductors including the oxidized nickel-gold (Ni-O- A transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which has an average transmittance of 90% or more, has been proposed instead of the Ohmic contact current spreading layer 501 formed of a transparent metal or an alloy. The above-mentioned transparent electroconductive material is a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor (~ 7.5 eV or more (4.7 to 6.1 eV), and p-type In x Al y Ga 1-xy N semiconductor on the upper surface of the semiconductor, and after the subsequent process including the heat treatment, not the ohmic contact interface but the larger noncontact resistance A schottky contact interface is formed, and a new transparent conductive material or a manufacturing process capable of solving the above problems is needed.

A transparent conductive material such as ITO or ZnO is formed on the upper surface of the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor which is the upper nitride- Recently, YK Su et al. Have reported that the above-mentioned transparent electroconductive material can be used as a good ohmic contact current spreading layer 501 of p-type In x Al y A current spreading layer having an ohmic contact interface via a superlattice structure is formed prior to the direct deposition of Ga 1-xy N (0? X, 0? Y, x + y? 1) 501) formation technology.

2, the superlattice structure has two layers a1 and b1 of a well (b1) and a barrier (a1) in a multi-quantum well structure The thickness of the barrier (a1) of the multiple quantum well structure is relatively thick compared to the thickness of the well (b1), while the thickness of the barrier (a1) of the multiple quantum well structure is thicker than that of the two layers a2, and b2 have a thin thickness of 5 nm or less. Due to the above-described characteristic, the multiple quantum well structure plays a role of confinement of electrons or holes as carriers into a well b1 located between the thick barrier a1, And facilitates the transport of the liquid.

Referring to FIG. 3, a light emitting diode device having an ohmic contact current spreading layer 60 using a superlattice structure proposed by YK Su et al. Will be described. The group III nitride semiconductor light emitting diode device includes a sapphire growth substrate 10 and a lower nitride-based clad layer 20 made of an n-type conductive semiconductor material formed on the upper surface of the growth substrate 10, a nitride-based active layer 30, and a upper nitride-based clad layer 40, and a superlattice structure 90. In particular, the superlattice structure 90 is grown in situ with the same growth equipment as the lower nitride-based cladding layer 20, the nitride-based active layer 30, and the upper nitride-based cladding layer 40 Growth. The lower nitride-based cladding layer 20 may be composed of n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multilayers, (0? X, 0? Y, x + y? 1) semiconductor multilayers composed of Group III nitride-based In x Al y Ga 1-xy N (different compositions of a multi-quantum well structure) have. The upper nitride-based cladding layer 40 may be composed of a semiconductor multilayer of p-type In x Al y Ga 1-x-y N (0? X, 0? Y, x + y? Further, the superlattice structure 90 may be formed of Group III nitride-based In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductors or other boards (0? X, 0? Y, x + y? 1) semiconductor multilayers of Group III nitride type In x Al y Ga 1-xy N having a dopant.

Depending on the composition and the type of dopant constituting the superlattice structure 90, the p-type In x Al y Ga 1-xy N (0? X, 0 Y, x + y < / = 1) to increase the net effective hole concentration by lowering the dopant activation energy of the semiconductor, or by quantum tunneling conduction through band- It is known to form an ohmic contact interface through the phenomenon of mechanical tunneling transport.

In general, the lower nitride-based cladding layer / the nitride-based active layer / the upper nitride-based cladding layer / superlattice structure 20, 30, 40, and 90 formed of the Group III nitride-based semiconductor single crystal are formed by MOCVD, MBE, HVPE, , Or a device such as a PLD. In order to improve the lattice matching with the sapphire growth substrate 10 prior to the growth of the n-type In x Al y Ga 1-xy N semiconductor of the lower nitride-based cladding layer 20, The buffer layer 201 may be formed therebetween.

However, the material used for the ohmic contact current spreading layer (501 or 60) composed of the transparent electroconductive material located on the upper surface of the upper nitride-based clad layer (40) has a trade-off relationship between the transmittance and the electric conductivity have. That is, if the thickness of the ohmic contact current spreading layer (501 or 60) is reduced to increase the transmittance, the conductivity of the ohmic contact current spreading layer (501 or 60) is lowered. Conversely, the conductivity of the Group III nitride semiconductor light emitting diode device increases, Resulting in a problem of degradation of device reliability.

Therefore, as a method of not using an ohmic contact current spreading layer composed of a transparent electrically conductive material, in the case of an optically transparent growth substrate, an electrically conductive material having a high reflectance is formed on the upper surface of the nitride- It is conceivable to form the formed ohmic contact current spreading layer 502. This is a cross-sectional view of the group III nitride-based semiconductor light-emitting diode device of the flip-chip structure shown in FIG.

As shown in the figure, a group III nitride-based semiconductor light-emitting diode device having a flip chip structure includes an optically transparent sapphire growth substrate 10 and a lower portion made of an n-type conductive semiconductor material sequentially grown on the growth substrate 10 A nitride-based clad layer 20, a nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. An ohmic contact current spreading layer 502 made of an electrically conductive material having a high reflectance is formed on the upper nitride-based cladding layer 40, and light generated in the nitride-based active layer 30, which is a light emitting structure for a light- Is reflected in the opposite direction by using the ohmic contact current spreading layer 502 having a high reflectivity and is emitted toward the optically transparent growth substrate 10. [

In general, a light emitting diode device which has been widely used by using group III nitride-based semiconductors is generated in ultraviolet to blue-green by using InGaN, AlGaN or the like in the nitride-based active layer 30, ) Sapphire. Since the sapphire used as the growth substrate 10 has a considerably wide band gap, it is transparent to light emitted from the group III nitride-based semiconductor light-emitting diode device. Therefore, the flip chip structure described above can be said to be a very effective means, especially in the group III nitride-based semiconductor light-emitting diode device. However, the flip-chip structure can form a ohmic contact interface with the upper nitride- Are limited. Typically, silver (Ag), aluminum (Al), and rhodium (Rh) are representative metal materials having high reflectance. The silver (Ag), the rhodium (Rh), and the alloys associated therewith exhibit a good ohmic contact interface with the upper nitride-based cladding layer (40), but the metal or alloy of these materials may emit light Diffusion phenomenon of material movement into the structure occurs, and there is a problem that the operating voltage of the light emitting diode device rises and reliability is lowered. In addition, the thermally unstable silver (Ag), rhodium (Rh), and alloys associated therewith exhibit low reflectance for ultraviolet rays of a short wavelength region of 400 nm or less, and the ohmic contact current of the light emitting diode device for ultraviolet light But not as a material of the spreading layer 502. On the other hand, the aluminum (Al) and related alloys have a high reflectivity up to the ultraviolet region, but they form a schottky contact interface rather than a preferable ohmic contact interface with the upper nitride-based cladding layer 40 having p- There is no state. Therefore, in order to realize a flip-chip group III nitride-based semiconductor light-emitting diode device, an ohmic contact current spreading layer (having an ohmic contact interface and a high reflectivity on the upper surface of the upper nitride- It is necessary to develop a material or a structure capable of forming the substrate 502.

On the other hand, since the group III nitride-based semiconductor light-emitting diode device having the general structure and flip-chip structure has a horizontal structure and is fabricated on the sapphire growth substrate 10 having low thermal conductivity and electrical insulation, it is inevitably generated when the light- It is difficult to smoothly discharge a large amount of heat, which is a problem with the device.

In addition, as shown and described, in order to form two ohmic contact electrodes and electrode pads, it is necessary to remove a part of the nitride-based active layer 40, thereby reducing the light emitting area and making it difficult to realize a high-quality light emitting diode device. The size of the wafer is reduced by the number of chips, which leads to price competitiveness.

In addition, after the manufacturing process of the light emitting diode device is completed on the wafer, the lapping, polishing, scribing, sawing, and braking breaking of the sapphire growth substrate 10 and the cleavage plane of the Group III nitride-based semiconductor during the mechanical process such as cutting, bending, or the like.

In order to solve the problem of the group III nitride-based semiconductor light-emitting diode device having the horizontal structure described above, the growth substrate 10 is removed so that two ohmic contact electrodes and electrode pads are opposed to the upper and lower portions of the light- A group III nitride-based semiconductor light-emitting diode device having a vertical structure in which an externally applied current flows in one direction to improve light-emitting efficiency is disclosed in many documents (US Pat. No. 6,071,795, US Pat. No. 6,335,263, US 20060189098) have.

26 is a cross-sectional view showing a general manufacturing process of a group III nitride-based semiconductor light-emitting diode device having a vertical structure as an example of the prior art. As shown in FIG. 26, in a general vertical structure light emitting diode device manufacturing method, a light emitting structure for a light emitting diode device is formed on a sapphire growth substrate 10 using an MOCVD or MBE growth equipment, A reflective p-type ohmic contact electrode structure 90 is formed on top of the upper nitride-based clad layer 50 present in the top layer of the structure, and then a supporting substrate wafer prepared separately from the growth substrate wafer is heated at a temperature of less than 300 ° C, Bonded to each other, and then sapphire growth substrate is removed to fabricate a vertical LED device.

26, an undoped GaN or InGaN buffer layer 20, a lower nitride-based cladding layer 30, and an undoped GaN-based cladding layer 30 are grown on an upper portion of a sapphire substrate 10 using an MOCVD growth equipment. The nitride-based active layer 40 formed of InGaN and GaN and the upper nitride-based clad layer 50 are sequentially grown to form a light-emitting structure for a light-emitting diode device (FIG. 26A) A reflective p-type ohmic contact electrode structure 90 and a soldering reaction preventing layer 100 are sequentially formed on the substrate 100 to prepare a growth substrate wafer (FIG. 26B). Thereafter, as shown in FIG. 26C, two ohmic contact electrodes 120 and 130 are formed on the upper and lower portions of the electrically conductive supporting substrate 110, and a soldering material (for example, 140 are deposited to prepare a supporting substrate wafer. Thereafter, the surface of the grown substrate wafer The solder material diffusion preventing layer 100 and the soldering material 140 of the paper substrate wafer are brought into contact with each other as shown in FIG. Thereafter, the sapphire growth substrate 10 is irradiated with a laser having a strong energy to the rear surface of the sapphire growth substrate 10, which is the rear surface of the growth substrate wafer on which the plurality of light emitting diode devices are manufactured, from the plurality of light emitting diode devices separation and (laser lift off; LLO), a GaN or InGaN buffer layer 20 of undoped (undope) damaged by the laser to the front until the bottom nitride-based cladding layer 30 is exposed by using a dry etching process (FIG. 26E), and an n-type ohmic contact electrode structure 80 is formed on the lower nitride-based clad layer 30 corresponding to the plurality of light emitting diode devices (FIG. 26F). Finally, the plurality of light emitting diode elements and the electrically conductive support substrate 110 are mechanically (e.g., mechanically, mechanically, electrically, etc.) lapping, polishing, scribing, sawing, A cutting process is performed to separate the light emitting diode into a single light emitting diode device (Fig. 26G).

However, the above-described vertical-structure LED device manufacturing process has various problems as described below, and it is difficult to secure a large number of single-vertically-structured LED devices in a safe manner. That is, since the bonding of the soldering wafer is performed in a low temperature range, a high temperature process which is higher than the soldering wafer bonding temperature can not be performed in a subsequent step, and it is difficult to realize a thermally stable light emitting diode device. Furthermore, since the thermal expansion coefficient and the lattice constant are coupled between different dissimilar wafers, thermal stress is generated at the time of bonding, which seriously affects the reliability of the light emitting diode device.

More recently, in order to solve the problems occurring in a group III nitride-based semiconductor light emitting diode device having a vertical structure manufactured by the above-described soldering wafer bonding, Cu, Ni, etc. are used instead of the electrically conductive supporting substrate formed by soldering wafer bonding A technique of forming a metal thick film on the reflective p-type Ohmic contact electrode structure 90 by an electroplating process has been developed and partially used in the production of products.

However, in the subsequent processes occurring in the LED manufacturing process of the vertical structure manufactured by combining with the electroplating process, that is, mechanical cutting processes such as high temperature heat treatment, lapping, polishing, scribing, sawing, Problems such as degradation of the performance of the device and occurrence of defects still remain as a problem to be solved.

Disclosure of the Invention The present invention has been made in recognition of the above-mentioned problems, and it is an object of the present invention to provide a growth substrate having a group represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) A growth substrate wafer having a p-type electrode structure including a current blocking structure and a reflective current spreading layer, a sandwich structure developed by the present inventor, and a light emitting structure for a group III nitride semiconductor light emitting diode The present invention relates to a method of manufacturing a group III nitride-based semiconductor light-emitting diode device having vertical structure by combining a wafer to wafer bonding process and a lift-off process.

More particularly, the present invention relates to a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device including a superlattice structure and a nitride based current injection layer is grown on a growth substrate, a dissimilar support substrate ), And a temporary substrate wafer are sandwiched in a sandwich structure, and then the growth substrate and the temporary substrate are removed through a lift-off process to form a group III nitride-based A semiconductor light emitting diode device and a method of manufacturing the same.

In order to achieve the above object,

A partial n-type electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the partial n-type electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed on the lower portion of the p-type electrode structure. The group III nitride-based semiconductor light-emitting diode device of the vertical structure includes:

The partial n-type electrode structure (partial n -type electrode system) is a reflective ohmic contact electrode having a reflectance of 50% or more, and has a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, at the wavelength band of 600nm or less a reflective ohmic contacting electrode and a reflective electrode pad.

Further, on the other hand, the portion of n-type electrode structure (partial n -type electrode system) may have a predetermined shape and dimensions of the top surface area of the lower part nitride-based cladding layer, a reflectance of 50% or more in the wavelength region of less than 600nm A reflective schottky contacting electrode and a reflective electrode pad.

The superlattice structure and the nitride-based current injection layer form an ohmic contacting interface with the upper nitride-based clad layer to facilitate easy current injection in the vertical direction current diffusion and diffusion diffusion of the material constituting the reflective current spreading layer into the light emitting structure.

The superlattice structure may also include a transparent multi-layer structure consisting of nitride or carbon nitride of Group 2, Group 3, or Group 4 elements having different dopants and composition elements, -layer film, and the thickness of each layer constituting these superlattice structures is preferably 5 nm or less.

Wherein the nitride based current injection layer is formed on the top surface of the superlattice structure and comprises a transparent single layer composed of nitride or carbon nitride of Group 2, 3, or 4 group elements having a thickness of 6 nm or more layer or a multi-layer film.

The current blocking structure serves to uniformly distribute the current applied from the outside to the entire region of the device without being concentrated on one side. The current blocking structure is formed in the same manner as the n-type electrode structure, .

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer or a thin film layer forming a schottky contacting interface.

Furthermore, the current blocking structure may have a trench or via-hole shape in which at least a portion of the upper nitride-based clad layer is exposed to the air by etching to at least the upper nitride-based clad layer.

The reflective current spreading layer is composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the current blocking layer or on the top surface of the current injection layer.

The heat-sink support preferably has an electrical or thermal conductivity. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, The foil is preferentially selected.

In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure can prevent current concentration in the vertical direction and serve as a reflector for light, Or a separate thin film layer capable of performing an antioxidant function of the material.

In place of the superlattice structure located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, P-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and AlInGaN monolayers having the following thicknesses.

On the other hand, by using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which the superlattice structure and one pair of nitride-based current injection layers are repeatedly and repeatedly laminated, Can be manufactured.

In order to achieve the above other object,

A front n-type electrode structure; A light emitting structure for a light emitting diode device comprising a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer below the front n-type electrode structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer below the light emitting structure; And a heat sink support formed on the lower portion of the p-type electrode structure. The group III nitride-based semiconductor light-emitting diode device of the vertical structure includes:

The front n-type electrode structure (full n -type electrode system) is transparent ohmic contact electrode (transparent with a transmittance of 70% or more in the wavelength band below and forming the entire area of the upper surface of the bottom nitride-based cladding layer and the ohmic contact interface 600nm ohmic contacting electrode and a reflective ohmic contacting electrode pad formed on the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.

Further, on the other hand, the front-side n-type electrode structure (full n -type electrode system) is transparent with a transmittance of 70% or more in the wavelength band below and forming the entire area of the upper surface of the bottom nitride-based cladding layer and the ohmic contact interface 600nm A transparent ohmic contacting electrode and a reflective schottky contacting electrode pad formed on the transparent ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less.

The superlattice structure and the nitride-based current injection layer form an ohmic contacting interface with the upper nitride-based clad layer to facilitate easy current injection in the vertical direction current diffusion and diffusion diffusion of the material constituting the reflective current spreading layer into the light emitting structure.

The superlattice structure may also include a transparent multi-layer structure consisting of nitride or carbon nitride of Group 2, Group 3, or Group 4 elements having different dopants and composition elements, -layer film, and the thickness of each layer constituting these superlattice structures is preferably 5 nm or less.

Wherein the nitride based current injection layer is formed on the top surface of the superlattice structure and is composed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 element components having a thickness of 6 nm or more It is a transparent single layer or multi-layer film.

The current blocking structure is used to uniformly distribute the current applied from the outside to the entire region of the device without concentrating on one side. The current blocking structure is formed in the same manner as the reflective electrode pad of the n-type ohmic contact electrode structure, Place them facing each other with dimensions.

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer or a thin film layer forming a schottky contacting interface.

Furthermore, the current blocking structure may have a trench or via-hole shape in which at least a portion of the upper nitride-based clad layer is exposed to the air by etching to at least the upper nitride-based clad layer.

The reflective current spreading layer is composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the current blocking layer or on the top surface of the current injection layer.

The heat-sink support preferably has an electrical or thermal conductivity. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, The foil is preferentially selected.

In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure can prevent current concentration in the vertical direction and serve as a reflector for light, Or a separate thin film layer capable of performing an antioxidant function of the material.

In place of the superlattice structure located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, P-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, and AlInGaN monolayers having the following thicknesses.

On the other hand, by using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which the superlattice structure and one pair of nitride-based current injection layers are repeatedly and repeatedly laminated, Can be manufactured.

In order to accomplish the above object, the present invention provides a method for manufacturing a vertical structure light emitting diode device using a light emitting structure for a group III nitride based semiconductor light emitting diode device,

A light emitting structure for a group III nitride-based light emitting diode device composed of a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer containing a buffer layer is successively grown Preparing a grown substrate wafer; Forming a p-type electrode structure including a current blocking structure and a reflective current spreading layer on a top surface of a nitride based current injection layer which is an uppermost portion of the light emitting structure for the light emitting diode device; Stacking a wafer bonding layer on / below a heterogeneous support substrate that is a heat sink support; Forming a sacrificial separation layer and a wafer bonding layer on the upper surface of the temporary substrate; Forming a composite by bonding a wafer with a sandwich structure in which the growth substrate and the temporary substrate are placed on the upper and lower surfaces of the heterogeneous support substrate; Removing the growth substrate and the temporary substrate from each other in a wafer-bonded composite with the sandwich structure; Forming a surface irregularity and a partial n-type electrode structure on the upper surface of the lower nitride-based clad layer of the composite from which the growth substrate has been removed; And forming a p-type ohmic contact electrode pad on the rear surface of the different support substrate of the composite from which the temporary substrate has been removed.

The current blocking structure is opposed to the n-type electrode structure in the same position in the vertical direction as a predetermined shape and dimension, as opposed to the n-type electrode structure.

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer, or a thin film layer forming a schottky contacting interface.

Furthermore, the current blocking structure may have a trench or via-hole shape in which at least a portion of the upper nitride-based clad layer is exposed to the air by etching to at least the upper nitride-based clad layer.

The sacrificial separation layer of the temporary substrate wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The heterogeneous support substrate, which is a heat-sink support, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

The wafer bonding layer on the growth substrate, the different support substrate, and the temporary substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP), a chemical etching treatment using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.

The steps of annealing and surface treatment are introduced before and after each step as well as electrical and optical characteristics of the group III nitride-based semiconductor light-emitting diode device, as means for enhancing the mechanical bonding force between the respective layers. .

According to another aspect of the present invention, there is provided a method of fabricating a vertical structure light emitting diode device using a light emitting structure for a group III nitride based semiconductor light emitting diode device,

A light emitting structure for a group III nitride-based light emitting diode device composed of a lower nitride-based clad layer, a nitride-based active layer, a upper nitride-based clad layer, a superlattice structure, and a nitride-based current injection layer containing a buffer layer is successively grown Preparing a grown substrate wafer; Forming a p-type electrode structure including a current blocking structure and a reflective current spreading layer on a top surface of a nitride based current injection layer which is an uppermost portion of the light emitting structure for the light emitting diode device; Stacking a wafer bonding layer on / below a heterogeneous support substrate that is a heat sink support; Forming a sacrificial separation layer and a wafer bonding layer on the upper surface of the temporary substrate; Forming a composite by bonding a wafer with a sandwich structure in which the growth substrate and the temporary substrate are placed on the upper and lower surfaces of the heterogeneous support substrate; Removing the growth substrate and the temporary substrate from each other in a wafer-bonded composite with the sandwich structure; Forming a surface irregularity and a partial n-type electrode structure on the upper surface of the lower nitride-based clad layer of the composite in which the growth substrate is removed; And forming a p-type ohmic contact electrode pad on the rear surface of the different support substrate of the composite from which the temporary substrate has been removed.

The current blocking structure is opposed to the reflective electrode pad of the front n-type electrode structure at the same position in the vertical direction as a predetermined shape and dimension.

In addition, the current blocking structure is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer or a thin film layer forming a schottky contacting interface.

Furthermore, the current blocking structure may have a trench or via-hole shape in which at least a portion of the upper nitride-based clad layer is exposed to the air by etching to at least the upper nitride-based clad layer.

The sacrificial separation layer of the temporary substrate wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The heterogeneous support substrate, which is a heat-sink support, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

The wafer bonding layer on the growth substrate, the different support substrate, and the temporary substrate is formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The process of separating the growth substrate and the support substrate uses a chemical-mechanical polishing (CMP) process, a chemical etching process using a wet etching solution, or a thermal-chemical decomposition reaction by irradiating a strong energy photon beam.

The steps of annealing and surface treatment are introduced before and after each step as well as electrical and optical characteristics of the group III nitride-based semiconductor light-emitting diode device, as means for enhancing the mechanical bonding force between the respective layers. .

As described above, since the group III nitride-based semiconductor light emitting diode of the vertical structure manufactured by the present invention includes the p-type electrode structure having the current blocking structure and the reflective current spreading layer, It is possible to prevent unilateral vertical current injection during driving and to promote horizontal current spreading in the horizontal direction to improve the overall performance of the LED.

In addition, according to the manufacturing method of the group III nitride-based semiconductor light emitting diode of the vertical structure according to the present invention, wafer bending phenomenon at the time of wafer-to-wafer bonding and manufacturing of the light emitting diode structure of a single light emitting diode device without any damage It is possible to improve the processability and yield of a fab process.

Hereinafter, the manufacture of a group III nitride-based semiconductor optoelectronic device, which is a light emitting diode and a device manufactured according to the present invention, will be described in detail with reference to the accompanying drawings.

FIG. 5 is a cross-sectional view showing a first embodiment of a light emitting structure for a group III nitride-based semiconductor light emitting diode device of a vertical structure invented by the present invention.

5, a light emitting structure A for a light emitting diode element having a vertical structure according to a first embodiment of the present invention, which is grown on the upper surface of a growth substrate 10, A nitride-based active layer 30, a top nitride-based clad layer 40 made of a p-type conductive semiconductor material, and a super-nitride-based clad layer 40 made of a p- A lattice structure 90, and a nitride based current injection layer 100.

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based clad layer 20 made of the n-type conductive semiconductor material may be formed of In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multi- And a buffer layer (not shown) formed on the upper surface of the growth substrate 10. The lower nitride-based clad layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where carriers such as electrons and holes are recombined, and includes InGaN, AlGaN, GaN, AlInGaN, and the like.

The nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy band gap of the material constituting the barrier layer of the nitride based active layer 30 is larger than the energy band gap of the material constituting the well layer and the thickness of the barrier layer is greater than the thickness of the well layer Thick is common. The barrier layer and the well layer may be binary, ternary or quaternary compound nitride semiconductors represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si), magnesium (Mg), or the like. The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of the material constituting the quantum well layer of the nitride-based active layer 30. [

The upper nitride-based clad layer 40 made of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + have. The upper nitride-based clad layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The superlattice structure 90 is formed on the upper surface of the upper nitride-based clad layer 40 made of the p-type conductive semiconductor material, and includes p-type p-type In x Al y Ga 1-xy N (0? y, x + y < / = 1) to increase the effective hole concentration by lowering the activation energy of the semiconductor dopant, or by quantum-mechanical tunneling transport phenomenon through energy band gap control Can cause.

The superlattice structure 90 is generally formed in a multi-layer structure. The thickness of each layer constituting the superlattice structure 90 is 5 nm or less, and each layer is made of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN , MgN, ZnN, or SiN. For example, the superlattice structure 90 includes InGaN / GaN, AlGaN / GaN, InGaN / GaN / AlGaN, and AlGaN / GaN / InGaN.

Further, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, or p-type conductive InGaN or GaN having a thickness of 5 nm or less, instead of the superlattice structure 90 constituted by the multi- , AlInN, AlN, InN, AlGaN, AlInGaN monolayer.

The nitride based current injection layer 100 is a transparent single layer composed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 elements having a thickness of 6 nm or more, Or a multi-layer film.

Further, the nitride based current injection layer 100 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like. For example, the nitride based current injection layer 100 may include at least one selected from the group consisting of GaN doped with Si, Mg doped GaN, InGaN doped with Si, InGaN doped with Mg, ) Doped AlGaN, and magnesium (Mg) -doped AlGaN.

The light-emitting structure A for the light-emitting diode element having the vertical structure is continuously grown in an in-situ state using a device such as MOCVD, MBE, HVPE, sputter, or PLD. The nitride-based active layer 30, the upper nitride-based clad layer 40, and the superlattice structure 90 of the light-emitting structure A for the vertical-structured light- The nitride based current injection layer 100 may be grown on the upper surface of the superlattice structure 90 in an ex situ state after the growth of the in-situ state.

6 is a cross-sectional view showing a second embodiment of a light emitting structure for a group III nitride-based semiconductor light emitting diode device of a vertical structure invented by the present invention.

6, a light emitting structure B for a light emitting diode device having a flip chip structure according to a first embodiment of the present invention, which is grown on the upper surface of a growth substrate 10, A nitride-based active layer 30, an upper nitride-based cladding layer 40 made of a p-type conductive semiconductor material, and a lower nitride-based cladding layer 20 made of an n-type conductive semiconductor material, A superlattice structure 90 repeatedly stacking, and a nitride based current injection layer 100. [

The growth substrate 10 may be made of a material such as sapphire or silicon carbide (SiC).

The lower nitride-based clad layer 20 made of the n-type conductive semiconductor material may be formed of In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) semiconductor multi- And a buffer layer (not shown) formed on the upper surface of the growth substrate 10. The lower nitride-based clad layer 20 may be formed by doping silicon (Si).

The nitride-based active layer 30 is a region where carriers such as electrons and holes are recombined, and includes InGaN, AlGaN, GaN, AlInGaN, and the like.

The nitride-based active layer 30 may be a multilayer film in which a quantum well layer and a barrier layer are repeatedly formed. The energy band gap of the material constituting the barrier layer of the nitride based active layer 30 is larger than the energy band gap of the material constituting the well layer and the thickness of the barrier layer is greater than the thickness of the well layer Thick is common. The barrier layer and the well layer may be binary, ternary or quaternary compound nitride semiconductors represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + have. Furthermore, the barrier layer and the well layer may be formed by doping silicon (Si), magnesium (Mg), or the like. The emission wavelength of light emitted from the light emitting diode device is determined according to the kind of the material constituting the quantum well layer of the nitride-based active layer 30. [

The upper nitride-based clad layer 40 made of the p-type conductive semiconductor material may be formed of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + have. The upper nitride-based clad layer 40 may be formed by doping zinc (Zn) or magnesium (Mg).

The superlattice structure 90 repeatedly stacked on the upper nitride-based cladding layer 40 is located on the upper surface of the upper nitride-based cladding layer 40 made of the p-type conductive semiconductor material, and the p-type p-type In x Al y Ga 1-xy N (0? x, 0? y, x + y? 1) to increase the effective hole concentration by lowering the dopant activation energy of the semiconductor, or to control the energy band gap Can lead to quantum-mechanical tunneling transport phenomena.

The superlattice structure 90 is generally formed in a multi-layer structure. The thickness of each layer constituting the superlattice structure 90 is 5 nm or less, and each layer is made of InN, InGaN, InAlN, AlGaN, GaN, AlInGaN, AlN, SiC, SiCN , MgN, ZnN, or SiN. For example, the superlattice structure 90 includes InGaN / GaN, AlGaN / GaN, InGaN / GaN / AlGaN, and AlGaN / GaN / InGaN.

Further, each layer of the superlattice structure 90 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like.

Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, or p-type conductive InGaN or GaN having a thickness of 5 nm or less, instead of the superlattice structure 90 constituted by the multi- , AlInN, AlN, InN, AlGaN, AlInGaN monolayer.

The nitride based current injection layer 100 repeatedly deposited on top of the superlattice structure 90 is formed of nitride or carbon nitride containing Group 2, Group 3 or Group 4 elements having a thickness of 6 nm or more a single layer or a multi-layer film composed of carbon nitride.

Further, the nitride based current injection layer 100 may be formed by doping silicon (Si), magnesium (Mg), zinc (Zn), or the like. For example, the nitride based current injection layer 100 may include at least one selected from the group consisting of GaN doped with Si, Mg doped GaN, InGaN doped with Si, InGaN doped with Mg, ) Doped AlGaN, and magnesium (Mg) -doped AlGaN.

The light-emitting structure A for the light-emitting diode element having the vertical structure is continuously grown in an in-situ state using a device such as MOCVD, MBE, HVPE, sputter, or PLD. The nitride-based active layer 30, the upper nitride-based clad layer 40, and the superlattice structure 90 of the light-emitting structure A for the vertical-structured light- The nitride based current injection layer 100 may be grown on the upper surface of the superlattice structure 90 in an ex situ state after the growth of the in-situ state.

FIG. 7 is a cross-sectional view showing a first embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

As shown in the figure, a lower n-type cladding layer 20, a nitride-based active layer 30, a upper n-cladding layer 40, a superlattice structure A p-type electrode structure 110 composed of a current blocking layer 90, a nitride based current injection layer 100, a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120, A light emitting diode having a vertical structure including bonding layers 130a and 130b, a heat sink support 160, and a p-type ohmic contact electrode pad 400 is formed.

In more detail, unevenness 200 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously for efficiently emitting light generated in the nitride-based active layer 30 to the outside, The partial n-type electrode structure 210 is formed on a part of the upper surface of the lower nitride-based cladding layer 20.

The partial n-type electrode structure 210 is formed of a reflective ohmic contact electrode and a reflective electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less on a part of the upper surface of the lower nitride-based cladding layer 20. In this case, the partial n-type electrode structure 210 is formed from a group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide And is formed of any one selected.

 Although not shown, a passivation thin film for protecting the nitride-based active layer 30 exposed through the side surface is formed on the side surface of the light emitting diode device of the vertical structure. At this time, the passivation film is formed of electrically insulating oxide, nitride, or fluoride, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A superlattice structure 90 and a nitride based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40. These superlattice structures 90 and ohmic contacting interface interface of the p-type electrode structure 110 to facilitate current injection in the vertical direction and diffusion barrier of the material constituting the p-type electrode structure 110 into the light emitting structure.

The superlattice structure 90 may also include a nitride or carbon nitride layer containing Group 2, Group 3, or Group 4 element elements having other dopants and compositional elements ). The thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The nitride based current injection layer 100 is formed on the upper surface of the superlattice structure and includes a nitride or carbon nitride layer containing Group 2, Group 3 or Group 4 element elements having a thickness of 6 nm or more ) Or a multi-layer film made of a transparent material.

The p-type electrode structure 110 formed on the bottom surface of the nitride based current injection layer 100 is basically composed of the current blocking structure 112 and the reflective current spreading layer 111.

The current blocking structure 112 serves to uniformly distribute the current applied from the outside to the entire region of the device without being concentrated on one side. The current blocking structure 112 is formed by the same process as that of the partial n-type electrode structure 210, Position.

The current blocking structure 112 is an electrically insulating thin film layer formed directly on the upper surface of the current injection layer 100 or a thin film layer forming a schottky contacting interface. In this case, the current blocking structure 112 may be formed of an electrically insulating oxide such as SiNx, SiO2, Al2O3, nitride, fluoride, Al, Ag, Rh, Ti, Cr, V, Nb, TiN , Cu, Ta, Au, Pt, Pd, Ru, and a metal silicide.

The reflective current spreading layer 111 is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the upper surface of the current injection layer 100. In this case, the reflective current spreading layer 111 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 serves to prevent current concentration in the vertical direction and to serve as a reflector for light, And a multi-layer thin film layer capable of improving the bonding property or preventing the oxidation of the material.

The material diffusion barrier layer 120 serves to prevent diffusion diffusion between the p-type electrode structure 110 and the wafer bonding layers 130a and 130b at the time of fabricating the vertical LED do.

The material constituting the material diffusion barrier layer 120 is determined depending on the kind of material constituting the p-type electrode structure 110 and the wafer bonding layers 130a and 130b. For example, Pt, Pd, Cu A metal silicide, or a metal silicide. The metal silicide may be selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN,

The wafer bonding layers 130a and 130b are formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 DEG C or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The dissimilar support substrate, which is the heat sink support 160, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

In the group III nitride-based semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure 110 serves to prevent the current blocking and the reflection of light in the vertical direction, A separate thin film layer capable of acting as a diffusion barrier, bonding between substances and improving bonding properties, or preventing oxidation of a material.

Instead of the superlattice structure 90 located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN Or a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN monolayer having a thickness of 5 nm or less.

On the other hand, by using a light emitting structure for a group III nitride-based semiconductor light emitting diode device in which one pair of the superlattice structure 90 and the nitride based current injection layer 100 are repeatedly and repeatedly laminated, The light emitting diode device can be manufactured.

8 is a cross-sectional view illustrating a group III nitride-based semiconductor light emitting diode device according to a second embodiment of the present invention.

As shown in the figure, a lower nitride-based clad layer 20, a nitride-based active layer 30, a upper nitride-based clad layer 40, a super-nitride-based clad layer 30, A p-type electrode structure 110 composed of a lattice structure 90, a nitride based current injection layer 100, a current blocking structure 112 and a reflective current spreading layer 111, a material diffusion barrier layer 120, A light emitting diode having a vertical structure including the wafer bonding layers 130a and 130b, the heat sink support 160, and the p-type ohmic contact electrode pad 400 is formed.

In more detail, unevenness 200 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously for efficiently emitting light generated in the nitride-based active layer 30 to the outside, The front n-type electrode structures 220 and 230 are formed on the entire upper surface of the lower nitride-based cladding layer 20.

The front n-type electrode structure (full n -type electrode system: 220 , 230) is formed in the lower nitride-based cladding layer 20, the entire area of the upper surface and the ohmic contact interface (ohmic contacting interface) and in a wavelength band of 600nm or less A transparent ohmic contact electrode 220 having a transmittance of 70% or more and a reflective electrode pad 230 formed on an upper surface of the transparent ohmic contact electrode 220 and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent n-type ohmic contact electrode 220 of the front n-type electrode structure may be formed of one selected from the group consisting of Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, Zn, The n-type ohmic contact electrode structure 230 of the front n-type electrode structure may be formed of any one selected from the group consisting of Al, Ag, Rh, Ti, Cr, In, Ga, Ga2O3, In, ITO, In2O3, Sn, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide.

 Although not shown, a passivation thin film for protecting the nitride-based active layer 30 exposed through the side surface is formed on the side surface of the light emitting diode device of the vertical structure. At this time, the passivation film is formed of electrically insulating oxide, nitride, or fluoride, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A superlattice structure 90 and a nitride-based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40 of the light-emitting diode device having the passivation film formed thereon, And an ohmic contacting interface are formed between the p-type electrode structure 110 and the p-type electrode structure 110 to facilitate current injection in the vertical direction and prevent diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure diffusion barrier.

The superlattice structure 90 may also include a nitride or carbon nitride layer containing Group 2, Group 3, or Group 4 element elements having other dopants and compositional elements ). The thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The nitride based current injection layer 100 is formed on the upper surface of the superlattice structure and includes a nitride or carbon nitride layer containing Group 2, Group 3 or Group 4 element elements having a thickness of 6 nm or more ) Or a multi-layer film made of a transparent material.

The p-type electrode structure 110 formed on the bottom surface of the nitride based current injection layer 100 is basically composed of the current blocking structure 112 and the reflective current spreading layer 111.

The current blocking structure 112 serves to uniformly distribute the current applied from the outside to the entire region of the device without concentrating on one side. The current blocking structure 112 may have a predetermined shape and a shape similar to the reflective electrode pad 230 of the front n- Place them facing each other with dimensions.

The current blocking structure 112 is an electrically insulating thin film layer directly formed on the upper surface of the current injection layer 100 or a thin film layer forming a schottky contacting interface. In this case, the current blocking structure 112 may be formed of an electrically insulating oxide such as SiNx, SiO2, Al2O3, nitride, fluoride, Al, Ag, Rh, Ti, Cr, V, Nb, TiN , Cu, Ta, Au, Pt, Pd, Ru, and a metal silicide.

The reflective current spreading layer 111 is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the upper surface of the current injection layer 100. In this case, the reflective current spreading layer 111 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 serves to prevent current concentration in the vertical direction and to serve as a reflector for light, And a separate thin film layer capable of improving the bonding property or preventing oxidation of the material.

The material diffusion barrier layer 120 serves to prevent diffusion diffusion between the p-type electrode structure 110 and the wafer bonding layers 130a and 130b at the time of fabricating the vertical LED do.

The material constituting the material diffusion barrier layer 120 is determined depending on the kind of material constituting the p-type electrode structure 110 and the wafer bonding layers 130a and 130b. For example, Pt, Pd, Cu A metal silicide, or a metal silicide. The metal silicide may be selected from the group consisting of Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN,

The wafer bonding layers 130a and 130b are formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The dissimilar support substrate, which is the heat sink support 160, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

In the group III nitride-based semiconductor light-emitting diode device of the vertical structure of the present invention, the p-type electrode structure has a function of preventing diffusion of a substance in addition to current blocking and reflection of light in a vertical direction. barrier, a separate thin film layer capable of performing bonding and bonding enhancement between materials, or preventing oxidation of a material.

Instead of the superlattice structure 90 located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN Or a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or AlInGaN single layer having a thickness of 5 nm or less.

On the other hand, by using a light emitting structure for a group III nitride-based semiconductor light emitting diode device in which one pair of the superlattice structure 90 and the nitride based current injection layer 100 are repeatedly and repeatedly laminated, The light emitting diode device can be manufactured.

9 is a cross-sectional view showing a third embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

As shown in the figure, the lower n-type cladding layer 20, the nitride-based active layer 30, the upper n-cladding layer 40, the superlattice structure 40, A p-type electrode structure composed of a current blocking layer 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, 130a, and 130b, a heat sink support 160, and a p-type ohmic contact electrode pad 400 are formed.

In more detail, unevenness 310 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously to efficiently emit light generated in the nitride-based active layer 30 to the outside, The partial n-type electrode structure 320 is formed on a part of the upper surface of the lower nitride-based cladding layer 20.

The partial n-type electrode structure 320 is formed of a reflective ohmic contact electrode and a reflective electrode pad having a reflectivity of 50% or more in a wavelength band of 600 nm or less on a part of the upper surface of the lower nitride-based cladding layer 20. In this case, the partial n-type electrode structure 320 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

 Although not shown, a passivation thin film for protecting the nitride-based active layer 30 exposed through the side surface is formed on the side surface of the light emitting diode device of the vertical structure. At this time, the passivation film is formed of electrically insulating oxide, nitride, or fluoride, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A superlattice structure 90 and a nitride based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40. These superlattice structures 90 and ohmic contacting interface interface of the p-type electrode structure is formed to facilitate current injection in the vertical direction and diffusion barrier of the material forming the p-type electrode structure into the light emitting structure.

The superlattice structure 90 may also include a nitride or carbon nitride layer containing Group 2, Group 3, or Group 4 element elements having other dopants and compositional elements ). The thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The nitride based current injection layer 100 is formed on the upper surface of the superlattice structure and includes a nitride or carbon nitride layer containing Group 2, Group 3 or Group 4 element elements having a thickness of 6 nm or more ) Or a multi-layer film made of a transparent material.

The p-type electrode structure formed on the bottom surface of the nitride-based current injection layer 100 is composed of a current blocking structure 250 and a reflective current spreading layer 260. The current blocking structure 250 Is etched deeper than the sum of the thickness of the nitride based current injection layer 100 and the thickness of the superlattice structure 90 so that a portion of the upper nitride- trench or via-hole shape exposed to air.

The current blocking structure 250 serves to uniformly distribute the current applied from the outside to the entire region of the device without concentrating on one side, and a trench or via hole of the current blocking structure 250 is formed on the portion of the n- And are positioned facing each other in a predetermined shape and dimension in the same manner as the reflective electrode pad 320.

The reflective current spreading layer 260 of the p-type electrode structure is formed on the upper surface or side surface of the nitride based current injection layer 100, the superlattice structure 90, and the upper nitride- Is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 260 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The nitride-based current injection layer 100 and the superlattice structure 90 are formed on the upper surface of the upper nitride-based clad layer 40, which is etched in the form of a trench or a via hole and exposed to the atmosphere, The current-reflective reflective current spreading layer 260 of the reflective current spreading layer 260 forms a schottky contacting interface while the reflective current spreading layer 260, which is in contact with the upper surface of the nitride based current injection layer 100 exposed to the atmosphere, (260) forms an ohmic contacting interface.

On the other hand, a part of the current blocking structure 250 in the form of a trench or a via hole is formed of air or an electrically insulating material.

The p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260 can prevent the current concentration in the vertical direction and serve as a reflector for light, Layer or a multi-layer thin-film layer capable of performing a function of preventing oxidation of the material or improving the properties of the material.

The material diffusion barrier layer 270 prevents diffusion diffusion between the reflective current spreading layer 260 of the p-type electrode structure and the wafer bonding layers 130a and 130b during the fabrication of the vertical LED diffusion barrier.

The material constituting the material diffusion barrier layer 270 is determined depending on the type of the material constituting the reflective current spreading layer 260 and the wafer bonding layers 130a and 130b of the p-type electrode structure. For example, Selected from the group consisting of Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, And is formed in any one of them.

The wafer bonding layers 130a and 130b are formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The dissimilar support substrate, which is the heat sink support 160, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

In the group III nitride-based semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure 110 serves to prevent the current blocking and the reflection of light in the vertical direction, A separate thin film layer capable of acting as a diffusion barrier, bonding between substances and improving bonding properties, or preventing oxidation of a material.

Instead of the superlattice structure 90 located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN Or a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or AlInGaN single layer having a thickness of 5 nm or less.

On the other hand, by using a light emitting structure for a group III nitride-based semiconductor light emitting diode device in which a pair of the superlattice structure 90 and the nitride based current injection layer 100 are repeatedly and repeatedly laminated A vertical light emitting diode device can be manufactured.

10 is a cross-sectional view showing a fourth embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention.

As shown in the figure, a lower nitride-based clad layer 20, a nitride-based active layer 30, a upper nitride-based clad layer 40, a super- A p-type electrode structure composed of a lattice structure 90, a nitride based current injection layer 100, a current blocking structure 250 and a reflective current spreading layer 260, a material diffusion barrier layer 270, A light emitting diode having a vertical structure including layers 130a and 130b, a heat sink support 160, and a p-type ohmic contact electrode pad 400 is formed.

In more detail, unevenness 310 is formed on the surface of the lower nitride-based clad layer 20, which is a light-emitting surface, advantageously to efficiently emit light generated in the nitride-based active layer 30 to the outside, The front n-type electrode structures 330 and 340 are formed on the entire upper surface of the lower nitride-based cladding layer 20.

The front n-type electrode structure (full n -type electrode system: 330 , 340) is formed in the lower nitride-based cladding layer 20, the entire area of the upper surface and the ohmic contact interface (ohmic contacting interface) and in a wavelength band of 600nm or less A transparent ohmic contact electrode 330 having a transmittance of 70% or more and a reflective electrode pad 340 formed on the transparent ohmic contact electrode 330 and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 330 of the front n-type electrode structure may be formed of one selected from the group consisting of Ni, Au, Pd, Ti, Cr, Mo, Pt, Rh, Ag, AgO, Ru, RuO2, Ir, IrO2, The n-type ohmic contact electrode structure 340 of the front n-type electrode structure is formed of any one selected from the group consisting of Al, Ag, Rh, Ti, Cr, In, ITO, In2O3, Sn, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, and metal silicide.

 Although not shown, a passivation thin film for protecting the nitride-based active layer 30 exposed through the side surface is formed on the side surface of the light emitting diode device of the vertical structure. At this time, the passivation film is formed of electrically insulating oxide, nitride, or fluoride, and is formed of any one selected from the group consisting of SiNx, SiO2, and Al2O3.

A superlattice structure 90 and a nitride based current injection layer 100 are sequentially formed on the lower surface of the upper nitride-based clad layer 40. These superlattice structures 90 and ohmic contacting interface interface of the p-type electrode structure is formed to facilitate current injection in the vertical direction and diffusion barrier of the material forming the p-type electrode structure into the light emitting structure.

The superlattice structure 90 may also include a nitride or carbon nitride layer containing Group 2, Group 3, or Group 4 element elements having other dopants and compositional elements ). The thickness of each layer constituting these superlattice structures 90 is preferably 5 nm or less.

The nitride based current injection layer 100 is formed on the upper surface of the superlattice structure and includes a nitride or carbon nitride layer containing Group 2, Group 3 or Group 4 element elements having a thickness of 6 nm or more ) Or a multi-layer film made of a transparent material.

The p-type electrode structure formed on the bottom surface of the nitride-based current injection layer 100 is composed of a current blocking structure 250 and a reflective current spreading layer 260. The current blocking structure 250 Is etched deeper than the sum of the thickness of the nitride based current injection layer 100 and the thickness of the superlattice structure 90 so that a portion of the upper nitride- trench or via-hole shape exposed to air.

The current blocking structure 250 serves to uniformly distribute the current applied from the outside to the entire region of the device without being concentrated on one side. The trench or via hole of the current blocking structure 250 is formed on the entire surface of the front n- And are positioned facing each other in a predetermined shape and dimension in the same manner as the reflective electrode pad 340.

The reflective current spreading layer 260 of the p-type electrode structure is formed on the upper surface or side surface of the nitride based current injection layer 100, the superlattice structure 90, and the upper nitride- Is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 260 may be formed of a material selected from the group consisting of Al, Ag, Rh, Ti, Cr, V, Nb, TiN, Cu, Ta, Au, Pt, Pd, Ru, And is formed of any one selected.

The nitride-based current injection layer 100 and the superlattice structure 90 are formed on the upper surface of the upper nitride-based clad layer 40, which is etched in the form of a trench or a via hole and exposed to the atmosphere, The current-reflective reflective current spreading layer 260 of the reflective current spreading layer 260 forms a schottky contacting interface while the reflective current spreading layer 260, which is in contact with the upper surface of the nitride based current injection layer 100 exposed to the atmosphere, (260) forms an ohmic contacting interface.

On the other hand, a part of the current blocking structure 250 in the form of a trench or a via hole is formed of air or an electrically insulating material.

The p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260 can prevent the current concentration in the vertical direction and serve as a reflector for light, Layer or a multi-layer thin-film layer capable of performing a function of preventing oxidation of the material or improving the properties of the material.

The material diffusion barrier layer 270 prevents diffusion diffusion between the reflective current spreading layer 260 of the p-type electrode structure and the wafer bonding layers 130a and 130b during the fabrication of the vertical LED diffusion barrier.

The material constituting the material diffusion barrier layer 270 is determined depending on the kind of the material constituting the reflective current spreading layer 260 of the p-type electrode structure and the wafer bonding layers 280 and 170, A metal silicide is formed from a group consisting of Pt, Pd, Cu, Rh, Re, Ti, W, Cr, Ni, Si, Ta, TiW, TiNi, NiCr, TiN, WN, CrN, TaN, TiWN, And is formed of any one selected.

The wafer bonding layers 130a and 130b are formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or more. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

The dissimilar support substrate, which is the heat sink support 160, is preferably electrically or thermally conductive. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, And a foil. As shown in Fig.

In the group III nitride-based semiconductor light emitting diode device of the vertical structure of the present invention, the p-type electrode structure 110 serves to prevent the current blocking and the reflection of light in the vertical direction, A separate thin film layer capable of acting as a diffusion barrier, bonding between substances and improving bonding properties, or preventing oxidation of a material.

Instead of the superlattice structure 90 located above the light emitting structure for the group III nitride-based semiconductor light emitting diode device, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN Or a p-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, or AlInGaN single layer having a thickness of 5 nm or less.

On the other hand, by using a light emitting structure for a group III nitride-based semiconductor light emitting diode device in which one pair of the superlattice structure 90 and the nitride based current injection layer 100 are repeatedly and repeatedly laminated, The light emitting diode device can be manufactured.

11 to 17 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.

11 is a cross-sectional view of a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.

11, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a p-type conductivity-based clad layer 20, which are basically composed of an n-type conductive single crystal semiconductor material, are formed on the growth substrate 10 A superlattice structure 90, and a nitride based current injection layer 100, which are made of a single crystal semiconductor material.

More specifically, the lower nitride-based clad layer 20 may be composed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure And an undoped InGaN layer and a GaN layer. The upper nitride-based clad layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Based nitride cladding layer 20 and the nitride-based cladding layer 20 before the light-emitting structure for a basic light-emitting diode element composed of the Group III nitride-based semiconductor layer described above is grown by a well-known process such as MOCVD or MBE single crystal growth, Another buffer layer (not shown) such as InGaN, AlN, SiC, SiCN, or GaN is formed on the uppermost growth surface of the growth substrate 10 to improve the lattice matching with the growth surface of the growth substrate 10 It is preferable to further form the film. The superlattice structure 90 formed on the upper nitride clad layer 40 and the nitride based current injection layer 100 form an ohmic contacting interface with the upper nitride clad layer 40. Thereby facilitating current injection in the vertical direction and preventing diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure. The superlattice structure 90 may be formed of InGaN / GaN doped with silicon (Si). The thickness of the InGaN doped with silicon (Si) and the thickness of GaN doped with silicon (Si) forming the superlattice structure 90 is preferably 5 nm or less. The nitride based current injection layer 100 may be composed of magnesium (Mg) -doped GaN having a thickness of 6 nm or more.

12 is a cross-sectional view sequentially showing a p-type electrode structure composed of a current blocking structure and a reflective current spreading layer, a material diffusion barrier layer, and a wafer bonding layer in an upper layer of a growth substrate wafer.

A p-type electrode structure 110 composed of a current blocking structure 112 and a reflective current spreading layer 111 is formed on the nitride based current injection layer 100. The current blocking layer 112 is preferably an electrically insulating thin film layer or a thin film layer forming a schottky contacting interface. In this case, the current blocking structure 112 may be composed of an electrically insulating oxide film layer such as SiNx, SiO2, Al2O3, or the like.

The reflective current spreading layer 111 is preferably formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less on the upper surface of the current injection layer 100. In this case, the reflective current spreading layer 111 may be made of Ag or an alloy of Ag.

In addition, the p-type electrode structure 110 composed of the current blocking structure 112 and the reflective current spreading layer 111 can prevent current concentration in the vertical direction and serve as a reflector for light, It is preferable to include a separate thin film layer capable of improving the bonding and bonding properties between the layers, or preventing oxidation of the material.

The material diffusion barrier layer 120 serves to prevent diffusion of a substance generated between the p-type electrode structure 110 and the wafer bonding layer 130 during device fabrication. The material diffusion barrier layer 120 may comprise TiW or TiWN.

The wafer bonding layer 130a may be made of Au or an Au-related alloy, which is an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 degrees or more.

FIG. 13 is a cross-sectional view of a support substrate wafer and a temporary substrate wafer, which are heat sink supports developed by the present inventors, respectively.

13A, the heterogeneous support substrate wafer is composed of a heterogeneous support substrate 160, which is a heat sink support, and two wafer bonding layers 130b and 130c, formed on the upper and lower surfaces of the heterogeneous support substrate 160 .

The dissimilar support substrate 160, which is a heat sink support of the heterogeneous support substrate wafer, preferably has electrical or thermal conductivity. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, The foil is preferentially selected.

The wafer bonding layers 130b and 130c formed on the upper and lower surfaces of the different supporting substrate 160 as the heat sink support of the different supporting substrate wafer are formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or more . At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

As shown in Fig. 13B, the temporary substrate wafer is composed of the temporary substrate 170, the sacrificial separation layer 180, and the wafer bonding layer 130d.

The temporary substrate 170 of the temporary substrate wafer may have a transmittance of at least 70 percent or more in an optical wavelength region of 500 nanometers or less or a difference in thermal expansion coefficient from the growth substrate 10 of 2 pixels ppm / DEG C) or less is preferable. In this case, the temporary substrate 170 may be formed of a material such as sapphire (Al ₂ O ₃ ), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) And is formed of any one selected from the group consisting of spinel, lithium niobate, neodymium gallate, and gallium oxide (Ga ₂ O ₃ ).

The sacrificial separation layer 180 of the temporary substrate wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The wafer bonding layer 130d of the temporary substrate wafer is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 DEG C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

FIG. 14 is a cross-sectional view showing a state in which a wafer bonding layer on upper and lower surfaces of a different support substrate is aligned with a wafer bonding layer of a growth substrate and a temporary substrate, respectively, and then a wafer is bonded with a sandwich structure to form a composite body.

14, the wafer bonding layer 130a of the growth substrate wafer, the wafer bonding layer 130b on the upper surface of the different supporting substrate wafer, the wafer bonding layer 130c on the lower surface of the different supporting substrate wafer, And the wafer bonding layer 130d of the wafer are brought into contact with each other to form a composite C of a sandwich structure by a wafer bonding process.

The wafer bonding is preferably carried out by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.

Further, surface treatment and heat treatment are performed to improve the mechanical bonding force and the ohmic contact interface formation between the two materials 130a / 130b, 130c / 130d before / after performing the wafer bonding process. Process may be introduced.

15 is a cross-sectional view showing a process of lifting off a growth substrate and a temporary substrate, respectively, in a composite of wafer bonded sandwich structures.

As shown, the process of lifting off the growth substrate 10, which is part of the growth substrate wafer, and the temporary substrate 170 of the temporary substrate wafer in the composite (C) of the wafer bonded sandwich structure, A laser beam 190 which is a photon beam having a predetermined wavelength is irradiated on the back surface of the optically transparent growth substrate 10 and the temporary substrate 170 to form an interface between the growth substrate 10 and the lower nitride- To generate a thermal-chemical decomposition reaction to separate the growth substrate 10. Further, a thermal-chemical decomposition reaction is generated at the interface between the temporary substrate 170 and the sacrificial separation layer 180 to separate and remove the temporary substrate 170.

In addition, depending on the physical and chemical properties of the growth substrate 10 and the temporary substrate 170, chemical-mechanical polishing or chemical wet etching using an etching solution may be used.

16 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based clad layer after the growth substrate of the growth substrate wafer and the temporary substrate of the temporary substrate wafer are separated.

16, after the growth substrate 10 and the temporary substrate 170 are completely and completely removed, the lower nitride-based clad layer 20 is etched using chemical wet etching or dry etching, air, and the unevenness 200 is performed on the surface of the lower nitride-based clad layer 20 exposed to the atmosphere by wet or dry etching.

17 is a cross-sectional view of a composite in which a partial n-type electrode structure and a front-side n-type electrode structure are formed on a part of the top surface and the entire surface of the lower nitride-

Referring to FIG. 17A, a partial n-type electrode structure 210 is formed on a part of a top surface of a lower nitride-based clad layer 20 having surface irregularities 200 formed thereon. The partial n-type electrode structure 210 is preferably formed of a reflective material having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the partial n-type electrode structure 210 may be composed of Cr / Al / Cr / Au.

The part n-type electrode structure 210 has the same shape and dimensions as those of the current blocking structure 112 of the p-type electrode structure 110 formed on the upper surface of the upper nitride-based cladding layer 40, Are placed facing each other at the same position in the vertical direction from the viewpoint of the section view.

Referring to FIG. 17B, the front n-type electrode structures 220 and 230 are formed on the upper surface of the lower nitride-based clad layer 20 having the surface irregularities 200 formed thereon. The front n-type electrode structures 220 and 230 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and are formed of a transparent ohmic contact layer having a transmittance of 70% or more in a wavelength band of 600 nm or less. And a reflective electrode pad 230 formed on the upper surface of the transparent ohmic contact electrode 220 and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 220 may be made of ITO, InZnO, or ZnInO, and the reflective electrode pad 230 may be made of Ag / Ti / Pt / Au.

Further, in order to improve the performance of the light emitting diode device having a vertical structure before or after forming the partial or whole n-type electrode structures 210, 220, and 230 on the upper surface of the lower nitride-based clad layer 20, treatment or heat treatment may be performed.

Finally, a p-type ohmic contact electrode pad 400 is formed on the bottom surface of the heat sink support 160 to complete a vertical light emitting diode device.

18 to 25 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention.

18 is a cross-sectional view showing a growth substrate wafer on which a light emitting structure for a group III nitride-based semiconductor light emitting diode device is grown on a growth substrate.

18, a lower nitride-based clad layer 20, a nitride-based active layer 30, and a p-type conductivity-based clad layer 20, which are basically composed of an n-type conductive single crystal semiconductor material, are formed on the growth substrate 10 A superlattice structure 90, and a nitride based current injection layer 100, which are made of a single crystal semiconductor material.

More specifically, the lower nitride-based clad layer 20 may be composed of an n-type conductive GaN layer and an AlGaN layer, and the nitride-based active layer 30 may be formed of a multi-quantum well structure And an undoped InGaN layer and a GaN layer. The upper nitride-based clad layer 40 may be composed of a p-type conductive GaN layer and an AlGaN layer. Based nitride cladding layer 20 and the nitride-based cladding layer 20 before the light-emitting structure for a basic light-emitting diode element composed of the Group III nitride-based semiconductor layer described above is grown by a well-known process such as MOCVD or MBE single crystal growth, Another buffer layer (not shown) such as InGaN, AlN, SiC, SiCN, or GaN is formed on the uppermost growth surface of the growth substrate 10 to improve the lattice matching with the growth surface of the growth substrate 10 It is preferable to further form the film. The superlattice structure 90 formed on the upper nitride clad layer 40 and the nitride based current injection layer 100 form an ohmic contacting interface with the upper nitride clad layer 40. Thereby facilitating current injection in the vertical direction and preventing diffusion of the material constituting the p-type electrode structure 110 into the light emitting structure. The superlattice structure 90 may be formed of InGaN / GaN doped with silicon (Si). The thickness of the InGaN doped with silicon (Si) and the thickness of GaN doped with silicon (Si) forming the superlattice structure 90 is preferably 5 nm or less. The nitride based current injection layer 100 may be composed of silicon (Si) -doped GaN having a thickness of 6 nm or more.

19 is a cross-sectional view in which a trench or a via hole is formed in an upper layer of a light emitting structure for a light emitting diode element to form a current blocking structure on an upper layer of a growth substrate wafer.

The current blocking structure 250 of the trench or via hole allows the current applied from the outside to be uniformly dispersed in the entire region of the device without being concentrated on one side. The nitride based current injection layer 100 Etching a portion of the upper nitride-based cladding layer 40 by a depth greater than the thickness h of the thickness of the superlattice structure 90 and the thickness of the superlattice structure 90 to form a trench or And has a via-hole shape. The trenches or via holes of the current blocking structure 250 are positioned opposite to each other in a predetermined shape and dimension like the reflective electrode pads 330 of the n-type ohmic contact electrode structure.

20 is a cross-sectional view sequentially illustrating a p-type electrode structure, a material diffusion barrier layer, and a wafer bonding layer, which are composed of a current blocking structure and a reflective current spreading layer, on a light emitting structure for a light emitting diode device in which a trench or a via hole is formed.

Based current injection layer 100 exposed to the air to complete the p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260, the superlattice structure 90, And a current blocking structure 250 having a trench or via hole shape surrounded by an upper surface or a side surface of the upper nitride-based cladding layer 40 is formed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less. In this case, the reflective current spreading layer 260 may be made of an Al or Al-related alloy.

The nitride-based current injection layer 100 and the superlattice structure 90 are formed on the upper surface of the upper nitride-based clad layer 40, which is etched in the form of a trench or a via hole and exposed to the atmosphere, The current-reflective reflective current spreading layer 260 of the reflective current spreading layer 260 forms a schottky contacting interface while the reflective current spreading layer 260, which is in contact with the upper surface of the nitride based current injection layer 100 exposed to the atmosphere, (260) forms an ohmic contacting interface.

On the other hand, a part of the current blocking structure 250 in the form of a trench or a via hole is formed of air or an electrically insulating material.

The p-type electrode structure composed of the current blocking structure 250 and the reflective current spreading layer 260 can prevent the current concentration in the vertical direction and serve as a reflector for light, Layer or a multi-layer thin-film layer capable of performing a function of preventing oxidation of the material or improving the properties of the material.

The material diffusion barrier layer 270 serves to prevent a diffusion diffusion between the p-type electrode structure 110 and the wafer bonding layer 130a during device fabrication. The material diffusion barrier layer 120 may comprise TiW or TiWN.

The wafer bonding layer 130a may be made of Au or an Au-related alloy, which is an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 degrees or more.

FIG. 21 is a cross-sectional view of a heterogeneous support substrate wafer and a temporary substrate wafer, which are heat sink supports developed by the present inventors, respectively.

21A, the heterogeneous support substrate wafer is composed of a heterogeneous support substrate 160, which is a heat sink support, and two wafer bonding layers 130b and 130c, formed on the upper and lower surfaces of the heterogeneous support substrate 160 .

The dissimilar support substrate 160, which is a heat sink support of the heterogeneous support substrate wafer, preferably has electrical or thermal conductivity. In this case, the heat sink support may be a plate of Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a wafer of Ni, Cu, Nb, CuW, NiW, The foil is preferentially selected.

The wafer bonding layers 130b and 130c formed on the upper and lower surfaces of the different supporting substrate 160 as the heat sink support of the different supporting substrate wafer are formed of an electrically conductive material having a strong bonding force at a predetermined pressure and a temperature of 200 ° C or more . At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

As shown in Fig. 21B, the temporary substrate wafer is composed of the temporary substrate 170, the sacrificial separation layer 180, and the wafer bonding layer 130d.

The temporary substrate 170 of the temporary substrate wafer may have a transmittance of 70% or more in terms of optically in a wavelength range of 500 nanometers or less or a difference in thermal expansion coefficient from the growth substrate 10 of 2 pixels ppm / DEG C) or less is preferable. In this case, the temporary substrate 170 is formed of a material such as sapphire (Al ₂ O ₃ ), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN) and is formed of any one selected from the group consisting of spinel, lithium niobate, neodymium gallate, and gallium oxide (Ga ₂ O ₃ ).

The sacrificial separation layer 180 of the temporary substrate wafer is made of a material which is advantageous for separating the supporting substrate. In this case, when a photon-beam having a specific energy band having a strong energy is irradiated and separated, it is preferable to use ZnO, GaN, InGaN, InN, ITO, AlInN, AlGaN, ZnInN, ZnGaN, MgGaN, etching solution, Au, Ag, Pd, SiO2, SiNx, or the like.

The wafer bonding layer 130d of the temporary substrate wafer is formed of an electrically conductive material film having a strong bonding force at a predetermined pressure and a temperature of 200 DEG C or higher. At this time, it is formed of any one selected from the group consisting of Au, Ag, Al, Rh, Cu, Ni, Ti, Pd, Pt, Cr, Sn, In, Si, Ge and metallic silicide.

FIG. 22 is a cross-sectional view showing a state in which a wafer bonding layer on upper and lower surfaces of a different support substrate, a wafer bonding layer of a growth substrate and a temporary substrate are aligned and then bonded to each other by a sandwich structure to form a composite body.

22, the wafer bonding layer 130a of the growth substrate wafer, the wafer bonding layer 130b on the upper surface of the different supporting substrate wafer, the wafer bonding layer 130c on the lower surface of the different supporting substrate wafer, And the wafer bonding layer 130d of the wafer are brought into contact with each other to form a composite C of a sandwich structure by a wafer bonding process.

The wafer bonding is preferably carried out by applying a predetermined hydrostatic pressure at a temperature of from room temperature to 700 ° C or less and in an atmosphere of vacuum, oxygen, argon, or nitrogen gas Do.

Further, surface treatment and heat treatment are performed to improve the mechanical bonding force and the ohmic contact interface formation between the two materials 130a / 130b, 130c / 130d before / after performing the wafer bonding process. Process may be introduced.

23 is a cross-sectional view showing a process of lifting off a growth substrate and a temporary substrate, respectively, in a composite of wafer bonded sandwich structures.

As shown, the process of lifting off the growth substrate 10, which is part of the growth substrate wafer, and the temporary substrate 170 of the temporary substrate wafer in the composite (C) of the wafer bonded sandwich structure, A laser beam 300 which is a photon beam having a predetermined wavelength is irradiated onto the back surface of the optically transparent growth substrate 10 and the temporary substrate 170 to form an interface between the growth substrate 10 and the lower nitride- To generate a thermal-chemical decomposition reaction to separate the growth substrate 10. In addition, a thermal-chemical decomposition reaction is generated at the interface between the temporary substrate 170 and the sacrificial separation layer 180 to separate and remove the temporary substrate 170.

In addition, depending on the physical and chemical properties of the growth substrate 10 and the temporary substrate 170, chemical-mechanical polishing or chemical wet etching using an etching solution may be used.

24 is a cross-sectional view of a composite in which surface irregularities are introduced on the lower nitride-based clad layer after the growth substrate of the growth substrate wafer and the temporary substrate of the temporary substrate wafer are separated.

24, after the growth substrate 10 and the temporary substrate 170 are completely and completely removed, the lower nitride-based cladding layer 20 is removed from the atmosphere (see FIG. 24) by chemical wet etching or dry etching air, and the unevenness 310 is performed on the surface of the lower nitride-based clad layer 20 exposed to the atmosphere by wet or dry etching.

25 is a cross-sectional view of a composite in which a partial n-type electrode structure and a front-side n-type electrode structure are formed on a part of the top surface and the entire region of the lower nitride-

Referring to FIG. 25A, a partial n-type electrode structure 320 is formed on a part of a top surface of a lower nitride-based clad layer 20 having surface irregularities 310 formed thereon. The partial n-type electrode structure 320 is preferably formed of a reflective material having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the partial n-type electrode structure 320 may be composed of Cr / Al / Cr / Au.

The partial n-type electrode structure 320 has the same shape and dimensions as the current blocking structure 250 of the p-type electrode structure formed on the upper surface of the upper nitride-based cladding layer 40, They are arranged opposite to each other at the same position in the vertical direction.

Referring to FIG. 17B, the front n-type electrode structures 330 and 340 are formed on the upper surface of the lower nitride-based clad layer 20 having the surface irregularities 310 formed thereon. The front n-type electrode structures 330 and 340 form an ohmic contacting interface with the entire upper surface of the lower nitride-based clad layer 20 and form a transparent ohmic contact layer having a transmittance of 70% or more in a wavelength band of 600 nm or less. And a reflective electrode pad 340 formed on the contact electrode 330 and the transparent ohmic contact electrode 330 and having a reflectance of 50% or more in a wavelength band of 600 nm or less. In this case, the transparent ohmic contact electrode 330 may be composed of ITO, InZnO, or ZnInO, and the reflective electrode pad 340 may be composed of Ag / Ti / Pt / Au.

In order to improve the performance of the light emitting diode device having a vertical structure before or after forming the partial or total n-type electrode structures 320, 330, and 340 on the upper surface of the lower nitride-based clad layer 20, treatment or heat treatment may be performed.

Finally, a p-type ohmic contact electrode pad 400 is formed on the bottom surface of the heat sink support 160 to complete a vertical light emitting diode device.

FIG. 1 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,

2 is a cross-sectional view for explaining a multi-quantum well structure and a superlattice structure,

3 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,

4 is a cross-sectional view showing a representative example of a group III nitride-based semiconductor light-emitting diode device having a conventional flip chip structure,

5 is a cross-sectional view illustrating a first embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device of a vertical structure invented by the present invention,

6 is a cross-sectional view showing a second embodiment of a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device of a vertical structure invented by the present invention,

FIG. 7 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device according to a first embodiment of the present invention,

FIG. 8 is a cross-sectional view illustrating a group III nitride-based semiconductor light-emitting diode device according to a second embodiment of the present invention,

FIG. 9 is a cross-sectional view of a group III nitride-based semiconductor light emitting diode device according to a third embodiment of the present invention,

10 is a sectional view showing a fourth embodiment of a group III nitride-based semiconductor light emitting diode device of a vertical structure manufactured according to the present invention,

11 to 17 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention,

18 to 25 are cross-sectional views illustrating a method of manufacturing a group III nitride-based semiconductor light emitting diode device having a vertical structure according to an embodiment of the present invention,

26 is a cross-sectional view showing a manufacturing process of a group III nitride-based semiconductor light emitting diode having a vertical structure according to the prior art.

Claims (46)

Based current injection layer, a superlattice structure on the nitride-based current injection layer, a super-nitride cladding layer on the superlattice structure, a nitride-based active layer on the super-nitride cladding layer, and a nitride-based active layer on the nitride- A light emitting structure for a light emitting diode element comprising a clad layer; An n-type ohmic contact electrode structure disposed on a part of an upper surface of the light emitting structure; A p-type electrode structure including a current blocking structure and a reflective current spreading layer on a bottom surface of the light emitting structure for the light emitting diode; A heat sink support formed on a bottom surface of the p-type electrode structure; And a p-type ohmic contact electrode pad formed on the bottom surface of the heat sink support, The current blocking structure is formed by etching at least the upper nitride-based clad layer to form a group of vertical structures having a trench or a via-hole shape in which a part of the upper nitride-based clad layer is exposed to air III nitride based semiconductor light emitting diode device. The method according to claim 1, The superlattice structure is a transparent multi-layer structure composed of nitride or carbon nitride of Group 2, Group 3 or Group 4 elements having different dopants and composition elements. layer structure, and each layer of the superlattice structure has a thickness of 5 nm or less, and the group III nitride-based semiconductor light-emitting diode device has a vertical structure. The method according to claim 1, The nitride-based current injection layer is formed on the upper surface of the superlattice structure. The nitride-based current injection layer has a thickness of 6 nm or more, and includes Group 2, Group 3, and Group 3 elements having different dopants and composition elements. Or a transparent single-layer or multi-layer vertical structure group III nitride-based semiconductor light-emitting diode device composed of a nitride or carbon nitride of a Group 4 element. The method according to claim 1, The current blocking structure of the group III nitride-based semiconductor light-emitting diode device has a vertical structure in which the current blocking structure is positioned opposite to each other in a predetermined shape and dimension like the n-type electrode structure. delete delete The method according to claim 1, Wherein the reflective current spreading layer is formed on the current blocking layer or on the top surface of the current injection layer by a group III nitride-based system having a vertical structure composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less Semiconductor light emitting diode device. The method according to claim 1, The heat-sink support may include a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a plate of Ni, Cu, Nb, CuW, NiW or NiCu plate or foil of a Group III nitride-based semiconductor light-emitting diode device. The method according to claim 1, The p-type electrode structure includes a separate thin film layer that can prevent current diffusion in the vertical direction and serve as a reflector for light, prevent diffusion of materials, improve bonding and bonding properties between materials, or prevent oxidation of materials Group III nitride-based semiconductor light-emitting diode device. The method according to claim 1, Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of not more than 5 nm or p-type conductive InGaN, GaN, AlInN, AlN, InN , AlGaN, and AlInGaN monolayer can be substituted for a group III nitride-based semiconductor light-emitting diode device. The method according to claim 1, Type nitride semiconductor light-emitting diode device using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which one pair of the superlattice structure and the nitride-based current injection layer is repeatedly and repeatedly laminated. The method according to claim 1, The n-type electrode structure (partial n -type electrode system) is composed of a vertical reflective material having a reflectivity of 50% or more, and has a predetermined shape and dimensions of the upper surface on a portion of the lower nitride-based cladding layer, at the wavelength band of 600nm or less Group III nitride-based semiconductor light-emitting diode device. an n-type electrode structure; A nitride based current injection layer on the bottom surface of the n-type electrode structure, a superlattice structure on the nitride based current injection layer, a top nitride clad layer on the superlattice structure, a nitride based active layer on the top nitride clad layer, A light-emitting structure for a light-emitting diode element comprising a lower nitride-based clad layer on the active layer; A p-type electrode structure including a current blocking structure and a reflective current spreading layer on a bottom surface of the light emitting structure for the light emitting diode; A heat sink support formed on a bottom surface of the p-type electrode structure; And a p-type ohmic contact electrode pad formed on the bottom surface of the heat sink support, The current blocking structure is formed by etching at least the upper nitride-based clad layer to form a group of vertical structures having a trench or a via-hole shape in which a part of the upper nitride-based clad layer is exposed to air III nitride based semiconductor light emitting diode device. 14. The method of claim 13, The superlattice structure is a transparent multi-layer structure composed of nitride or carbon nitride of Group 2, Group 3 or Group 4 elements having different dopants and composition elements. layer structure, and each layer of the superlattice structure has a thickness of 5 nm or less, and the group III nitride-based semiconductor light-emitting diode device has a vertical structure. 14. The method of claim 13, The nitride-based current injection layer is formed on the upper surface of the superlattice structure. The nitride-based current injection layer has a thickness of 6 nm or more, and includes Group 2, Group 3, and Group 3 elements having different dopants and composition elements. Or a transparent single-layer or multi-layer vertical structure group III nitride-based semiconductor light-emitting diode device composed of a nitride or carbon nitride of a Group 4 element. 14. The method of claim 13, The current blocking structure is positioned vertically opposite to the n-type ohmic contact electrode structure in a predetermined shape and dimension, as in the case of the n-type ohmic contact electrode structure. delete delete 14. The method of claim 13, Wherein the reflective current spreading layer is formed on the current blocking layer or on the top surface of the current injection layer by a group III nitride-based system having a vertical structure composed of an electrically conductive material having a reflectance of 80% or more in a wavelength band of 600 nm or less Semiconductor light emitting diode device. 14. The method of claim 13, The heat-sink support may include a wafer such as Si, GaAs, Ge, SiGe, AlN, GaN, AlGaN, SiC or AlSiC and a plate of Ni, Cu, Nb, CuW, NiW or NiCu plate or foil of a Group III nitride-based semiconductor light-emitting diode device. 14. The method of claim 13, The p-type electrode structure includes a separate thin film layer that can prevent current diffusion in the vertical direction and serve as a reflector for light, prevent diffusion of materials, improve bonding and bonding properties between materials, or prevent oxidation of materials Group III nitride-based semiconductor light-emitting diode device. 14. The method of claim 13, Type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, AlInGaN having a thickness of 5 nm or less, or p-type conductive InGaN, GaN, AlInN, AlN, InN , AlGaN, and AlInGaN monolayer can be substituted for a group III nitride-based semiconductor light-emitting diode device. 14. The method of claim 13, Type nitride semiconductor light-emitting diode device using a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device in which one pair of the superlattice structure and the nitride-based current injection layer is repeatedly and repeatedly laminated. 14. The method of claim 13, The electrode structure (full n -type electrode system) is n-type nitride-based cladding layer the lower portion to form a total area of the ohmic contact interface with the upper surface and in ohmic contact transparency and the transparent electrode having a transmittance of 70% or more in the wavelength band of 600nm or less And a reflective electrode pad formed on the upper surface of the ohmic contact electrode and having a reflectance of 50% or more in a wavelength band of 600 nm or less. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete

Images