KR101438581B1 - Method for forming thin film layer, manufacturing field effect transistor and manufacturing display - Google Patents
Method for forming thin film layer, manufacturing field effect transistor and manufacturing display Download PDFInfo
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- KR101438581B1 KR101438581B1 KR1020130119963A KR20130119963A KR101438581B1 KR 101438581 B1 KR101438581 B1 KR 101438581B1 KR 1020130119963 A KR1020130119963 A KR 1020130119963A KR 20130119963 A KR20130119963 A KR 20130119963A KR 101438581 B1 KR101438581 B1 KR 101438581B1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
The present invention relates to a method of forming a thin film layer, a method of manufacturing a field effect transistor, and a method of manufacturing a display, the method including: forming a sacrificial layer including a water-soluble polymer on a first substrate; Forming a thin film layer on the sacrificial layer; Forming a support layer for supporting the thin film layer on the thin film layer; Immersing the first substrate on which the sacrificial layer, the thin film layer and the supporting layer are formed in a liquid containing water to remove the sacrificial layer; And transferring the thin film layer formed with the supporting layer separated from the first substrate to the second substrate.
Description
The present invention relates to a method of forming a thin film layer, a method of manufacturing a field effect transistor, and a method of manufacturing a display.
The present invention has been carried out as part of a research project conducted by the Ministry of Education, Science and Technology as part of a new technology convergent growth engine project (Task No. 2012-K001311, ALD-based graphene FET and solid-state device application research) (Task identification number 2011-0028594, terahertz based ultra-sensitive multimolecular detection system).
The graphene has a very high electric field with a maximum field effect mobility of 200,000 (cm 2 / Vs) and is very thin and almost transparent at the atomic layer level. Because of this, after the first discovery of graphene in 2004, much research is underway to replace existing silicon-based devices with graphene devices. For example, research has been conducted on field effect transistors that use graphene as a channel, research on replacing metallization of displays by utilizing the transparency of graphene and high electrical properties.
In order to use graphene as an electric device, it is often necessary to form an insulating material on the graphene. For example, in order to realize a channel layer of a field effect transistor as a graphene layer, a gate insulating layer must be formed on the graphene layer. As another example, when a graphene layer is used as a transparent electrode (source, drain, gate) of a transistor in a transparent display, or as a transparent wiring connecting between adjacent transistors, an insulating layer must be formed on the graphene layer. However, when an insulating material is formed on the graphene by a conventional method, the electrical characteristics of the graphene are deteriorated.
Recently, atomic layer deposition (ALD) has been widely used in industrial processes for depositing insulating materials. However, it has been reported that it is impossible to form an insulating material on a graphene substrate by applying an atomic layer deposition method using a chemical reaction of a precursor because the surface of the graphene is chemically very stable.
Conventional methods for depositing an insulating material on a graphene include a method in which a metal is thinly deposited on a graphene by thermal evaporation, a polymer material having an insulating property is coated on the graphene substrate, And a method of forming an insulating material thereon using an atomic layer deposition method has been disclosed. However, these conventional methods are disadvantageous in that the electrical characteristics of the graphene device are deteriorated considerably Results. In other words, conventionally, graphene is damaged on the graphene layer after the formation of the graphene layer or after additional treatment for forming the seed layer, the deposition has to be performed. As a result, the electrical characteristics of graphene deteriorate. .
It is an object of the present invention to provide a method of forming a thin film layer, a method of manufacturing a field effect transistor, and a method of manufacturing a display, which can form an insulating material on a graphene layer without deteriorating the electrical characteristics of the graphene layer.
Another object of the present invention is to provide a method of forming a thin film layer, a method of manufacturing a field effect transistor, and a method of manufacturing a display, which can form a thin film layer by a physical transfer method without chemical treatment on the surface of the substrate.
Another object of the present invention is to provide a method of forming a thin film layer capable of uniformly forming a thin film layer (for example, an aluminum oxide insulating layer) on a substrate having a chemically stable surface which is difficult to form a thin film layer by atomic layer deposition A method of manufacturing a field effect transistor, and a method of manufacturing a display.
The problems to be solved by the present invention are not limited to the above-mentioned problems. Other technical subjects not mentioned will be apparent to those skilled in the art from the description below.
According to an aspect of the present invention, there is provided a method of forming a thin film layer, including: forming a sacrificial layer including a water-soluble polymer on a first substrate; Forming a thin film layer on the sacrificial layer; Forming a support layer for supporting the thin film layer on the thin film layer; Immersing the sacrificial layer, the thin film layer, and the first substrate on which the support layer is formed in a liquid containing water to remove the sacrificial layer; And transferring the thin film layer separated from the first substrate, on which the supporting layer is formed, to the second substrate.
In one embodiment of the present invention, the thin film layer forming method may further include removing the support layer formed on the thin film layer using a support layer removing liquid.
In one embodiment of the present invention, the support layer may comprise a polymethyl methacrylate resin.
In one embodiment of the present invention, the support layer remover may comprise acetone.
In one embodiment of the present invention, the sacrificial layer may include polyacrylic acid as the water-soluble polymer.
In one embodiment of the present invention, the thin film layer may comprise an aluminum oxide insulating layer.
In one embodiment of the present invention, the step of forming the thin film layer may include forming the aluminum oxide insulating layer on the sacrificial layer using atomic layer deposition.
In one embodiment of the present invention, the step of transferring the thin film layer to the second substrate may include the step of attaching the thin film layer and the support layer to a roll using the viscosity of the support layer, And transferring the support layer to the second substrate in a heated state.
In an embodiment of the present invention, the second substrate may be a substrate having a graphene layer or a carbon nanotube layer.
In one embodiment of the present invention, the first substrate may be a silicon substrate.
According to another aspect of the present invention, a thin film layer is transferred from a first substrate to a second substrate having a graphene layer or a carbon nanotube layer to form a gate insulating layer ; Forming a drain electrode and a source electrode on the second substrate; And forming a gate electrode on the gate insulating layer.
According to another aspect of the present invention, there is provided a method for forming a thin film layer, comprising: forming a first electrode on a first substrate, Transferring a thin film layer onto a substrate to form an insulating layer; And forming a graphene layer on the insulating layer, the graphene layer connecting electrodes of a field effect transistor adjacent in a second direction perpendicular to the first direction.
According to the embodiment of the present invention, the insulating material can be formed on the graphene without deteriorating the electrical characteristics of the graphene element.
Further, according to the embodiment of the present invention, the thin film layer can be formed by the physical transfer method without chemical treatment on the surface of the substrate.
Further, according to the embodiment of the present invention, the thin film layer can be uniformly formed on a substrate having a chemically stable surface, in which it is difficult to form the thin film layer by atomic layer deposition.
The effects of the present invention are not limited to the effects described above. Unless stated, the effects will be apparent to those skilled in the art from the description and the accompanying drawings.
1 is a flowchart illustrating a method of forming a thin film layer according to an embodiment of the present invention.
2 is a schematic view for explaining a method of forming a thin film layer according to an embodiment of the present invention.
FIG. 3 is a photograph of a section of an aluminum oxide insulating layer substrate formed by the method of forming a thin film according to an embodiment of the present invention by an electron microscope.
FIG. 4 is a graph showing a capacitance change according to a voltage of an aluminum oxide insulating layer substrate formed by a method of forming a thin film according to an embodiment of the present invention.
5 is a flowchart illustrating a method of manufacturing a field effect transistor according to an embodiment of the present invention.
6 is a schematic view for explaining a method of manufacturing a field-effect transistor according to an embodiment of the present invention.
7 is a graph illustrating a change in drain current according to drain voltage of a field effect transistor manufactured by a method of manufacturing a field effect transistor according to an embodiment of the present invention.
8 is a graph illustrating a change in drain current according to gate voltage of a field effect transistor manufactured by a method of manufacturing a field effect transistor according to an embodiment of the present invention.
Figure 9 is a plan view schematically illustrating a transparent display.
10 is a view for explaining a method of manufacturing a transparent display according to an embodiment of the present invention.
Other advantages and features of the present invention and methods of achieving them will be apparent by referring to the embodiments described hereinafter in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.
Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not. A general description of known configurations may be omitted so as not to obscure the gist of the present invention. In the drawings of the present invention, the same reference numerals are used as many as possible for the same or corresponding configurations.
A method of forming a thin film layer according to an embodiment of the present invention includes forming a sacrificial layer (e.g., polyacrylic acid) containing a water-soluble polymer sequentially on a first substrate (for example, a silicon substrate) Aluminum layer) and a support layer (for example, a polymethyl methacrylate resin) for supporting the thin film layer are laminated and then immersed in a liquid containing water to remove the sacrifice layer to form a thin film layer The supporting layer is separated, the thin film layer separated from the first substrate is physically transferred to a second substrate (for example, a substrate provided with a graphene layer or a carbon nanotube layer), and then a support layer formed on the thin film layer is removed A thin film layer is formed on the second substrate.
That is, in the method of forming a thin film layer according to an embodiment of the present invention, instead of directly depositing a thin film layer that forms an insulating material on a second substrate having a surface layer that is difficult to form an insulating material like a graphene layer, A thin film layer and a support layer are formed on the layer and the sacrificial layer is removed to transfer the thin film layer separated from the first substrate onto the second substrate. The second substrate having a surface layer difficult to form an insulating material such as a graphene layer, Can be uniformly formed. In the process of transferring the thin film layer from the first substrate to the second substrate, it is possible to prevent the change of the shape of the thin film layer by the support layer in spite of the thin thickness of the thin film layer.
A thin film layer forming method according to an embodiment of the present invention includes depositing a thin film layer on a sacrificial layer formed on a first substrate using atomic layer deposition, dissolving a sacrificial layer containing a water-soluble polymer in water, As a result, the thin film layer floating on the water in a state of being separated from the first substrate is transferred to the second substrate and physically transferred onto the second substrate, thereby forming the thin film layer on the second substrate. According to the embodiment of the present invention, a nanofilm layer such as an aluminum oxide insulating layer can be uniformly formed on the graphene layer or the carbon nanotube layer of the second substrate.
FIG. 1 is a flow chart showing a method of forming a thin film layer according to an embodiment of the present invention, and FIG. 2 is a schematic view illustrating a method of forming a thin film layer according to an embodiment of the present invention. A thin film layer forming method for forming a thin film layer on a first substrate and then transferring the thin film layer onto a second substrate to form a uniform thin film layer on the second substrate will be described with reference to FIGS. 1 and 2 (a) to 2 (b), a sacrificial layer including a water soluble polymer having a hydroxyl group is formed on a
At this time, the
Referring to FIGS. 1 and 2C, a
Referring to FIGS. 1 and 2 (d), a supporting
The
Referring to FIGS. 1 and 2 (g), the
As another example, it is also possible to physically transfer the
Referring to FIGS. 1 and 2 (h), after the water completely escapes between the nanosheet comprising the
According to the embodiment of the present invention, a
[Example 1]
Experiments were conducted to confirm the effect of the thin film layer forming method according to the present invention. First, spin coating of poly (acrylic acid) (PAA) on a silicon substrate was performed and dried at 150 ° C. for 10 minutes. Then, the sample was transferred into an atomic layer deposition apparatus and trimethylaluminum (TMA) H 2 O. The aluminum oxide insulating layer was deposited to a thickness of 30 nm at a temperature of 120 ° C. In order to prevent the aluminum oxide insulating layer from being torn when the polyacrylic acid was removed, a polymethyl methacrylate (PMMA) material was spin-coated on the sample on which the aluminum oxide insulating layer was deposited, After drying for 10 minutes, samples of PMMA / aluminum oxide / PAA / silicon substrate were immersed in water. Subsequently, after the polyacrylic acid was dissolved, the PMMA / aluminum oxide nanosheets floating on the water surface were moved to the target substrate, water was completely removed between the nanosheet and the target substrate, and the PMMA membrane was removed with acetone. I made it as a demonstration. For comparison with the present invention, an aluminum oxide insulating layer was deposited on a silicon substrate using an Atomic Layer Deposition (ALD) equipment, and samples thus prepared were compared.
As a result of observing the inventive example manufactured according to the embodiment of the present invention through an optical microscope photograph and a scanning electron microscope (SEM) image, the aluminum oxide insulating layer (A) It was verified that the film was very uniformly transferred on the substrate S as a whole and adhered very well without a partial tearing or folding phenomenon and no air gap being formed between the substrate S and the target substrate S. For evaluation and comparison of the electrical properties of the inventive and comparative examples, ruthenium (Ru) was formed on the aluminum oxide insulating layer for each sample. Dielectric constant, interface trap density (D it ), hysteresis, and leakage current density were measured for the inventive and comparative examples and are shown in Table 1 below.
As shown in Table 1, in the inventive example in which the aluminum oxide insulating layer nanosheets were transferred onto the target substrate according to the embodiment of the present invention, compared with the comparative example in which aluminum oxide was deposited directly on the silicon substrate by the atomic layer deposition method, Dielectric constant, hysteresis, as well as low interface trap density (D it ).
FIG. 4 is a graph showing a capacitance change according to a voltage of an aluminum oxide insulating layer substrate formed by a method of forming a thin film according to an embodiment of the present invention. As shown in FIG. 4, in the inventive example, a change in capacitance occurs in a voltage region relatively close to 0 (V) as compared with the comparative example. This shows that the aluminum oxide insulating layer substrate manufactured by the transfer method according to the embodiment of the present invention has better electric characteristics.
FIG. 5 is a flowchart illustrating a method of manufacturing a field effect transistor according to an embodiment of the present invention. FIG. 6 is a schematic view illustrating a method of manufacturing a field effect transistor according to an embodiment of the present invention. The steps S210 to S260 shown in FIG. 5 correspond to the steps S110 to S160 shown in FIG. 1, and a description overlapping with the embodiment shown in FIG. 1 will be omitted.
Referring to FIGS. 5 and 6A and 6B, in step S250, the
When the supporting
[Example 2]
Experiments were conducted to confirm the effect of the method of manufacturing a field effect transistor according to the present invention. First, spin coating of poly (acrylic acid) (PAA) on a silicon substrate was performed and dried at 150 ° C. for 10 minutes. Then, the sample was transferred into an atomic layer deposition apparatus and trimethylaluminum (TMA) An aluminum oxide insulating layer was deposited to a thickness of 50 nm at a temperature of 120 ° C. using H 2 O. In order to prevent the aluminum oxide insulating layer from being torn when the polyacrylic acid was removed, a polymethyl methacrylate (PMMA) material was spin-coated on the sample on which the aluminum oxide insulating layer was deposited, After drying for 10 minutes, samples of PMMA / aluminum oxide / PAA / silicon substrate were immersed in water. Subsequently, after the polyacrylic acid was fully melted, the PMMA / aluminum oxide nanosheet floating on the water surface was discharged to the target substrate as shown in FIG. 6 (a), water was completely removed between the nanosheet and the target substrate, The PMMA film was removed and a gate electrode was formed on the aluminum oxide gate insulating layer to produce a sample as shown in FIG. 6 (D). At this time, a target substrate having a graphene layer as a channel layer on a Si / SiO 2 substrate was used, and a channel width / length ratio (W / L) of the target substrate was designed to be 5 um / 15 um.
7 is a graph showing a change in drain current (I D ) according to a drain voltage (V D ) of a field effect transistor manufactured by a method of manufacturing a field effect transistor according to an embodiment of the present invention, 6 is a graph showing a change in drain current I D according to a gate voltage (G D ) of a field effect transistor manufactured by a method of manufacturing a field effect transistor according to an embodiment of the present invention.
Referring to FIG. 7, a field effect transistor manufactured according to an embodiment of the present invention has a linear characteristic of a drain current and a drain voltage at a gate voltage of -4 (V) to 4 (V). Referring to FIG. 8, a field effect transistor manufactured according to an embodiment of the present invention exhibits a change in gate current in a gate voltage region close to 0 (V) at a drain voltage of 0.5 (V) to 2 (V). The field effect mobility was estimated to be 2200 (cm 2 / Vs) for the hole and 800 (cm 2 / Vs) for the electron and was used as the channel layer of the field effect transistor The ambipolar character of the graphene layer is also evident. Therefore, it can be confirmed that the field effect transistor having excellent electrical characteristics can be manufactured according to the embodiment of the present invention.
FIG. 9 is a plan view schematically showing a transparent display, and FIG. 10 is a view for explaining a method of manufacturing a transparent display according to an embodiment of the present invention. 9 to 10, a method of manufacturing a
As shown in FIG. 10, the
An insulating material 351 is formed on the field effect transistor for wiring between the adjacent
For example, when the
In another embodiment of the present invention, when the electrodes of the
According to the method of forming a thin film layer according to an embodiment of the present invention, an insulating layer can be formed on a graphene substrate by a physical transfer method, and an insulator thin film can be deposited on a graphene film without performing additional processing on the graphene. According to the embodiment of the present invention, the insulating layer formed on the graphene substrate has performed its function well and the excellent electrical characteristics of the graphene are maintained.
It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications are possible within the scope of the present invention. It is to be understood that the technical scope of the present invention should be determined by the technical idea of the claims and that the technical scope of the present invention is not limited to the literary description of the claims, To the invention of the invention.
21: first substrate 22: sacrificial layer
23: thin film layer 24: support layer
25:
200: field effect transistor 261: substrate
262:
272,320
274: source electrode 275: drain electrode
276: gate electrode 300: transparent display
330, 340, 350:
332, 342:
351: Insulation material 360: First graphene layer
370: Thin film layer 380: Support layer
390: second graphene layer
Claims (12)
Forming a sacrificial layer comprising a water-soluble polymer on the first substrate;
Forming an insulating layer on the sacrificial layer;
Forming a supporting layer for supporting the insulating layer on the insulating layer;
Immersing the first substrate on which the sacrificial layer, the insulating layer, and the supporting layer are formed in a liquid containing water to remove the sacrificial layer; And
And transferring the insulating layer formed with the support layer separated from the first substrate to the graft layer or the second substrate having the carbon nanotube layer,
The step of transferring the insulating layer on which the supporting layer is formed to the graphene layer or the second substrate having the carbon nanotube layer includes:
Floating the support layer separated from the first substrate and floating on the liquid and the insulating layer to the second substrate; or
And transferring the insulating layer and the supporting layer attached to the rolls to the second substrate in a heated state after attaching the insulating layer and the supporting layer to a roll using the viscosity of the supporting layer, / RTI >
And removing the supporting layer formed on the insulating layer using a supporting layer removing liquid.
The support layer
A method for forming an insulating layer comprising a polymethyl methacrylate resin.
Wherein the supporting layer removing liquid comprises acetone.
The sacrificial layer may include,
Wherein the water-soluble polymer comprises polyacrylic acid.
Wherein the insulating layer
A method of forming an insulating layer comprising an aluminum oxide insulating layer.
Wherein forming the insulating layer comprises:
Wherein the aluminum oxide insulating layer is formed on the sacrificial layer by atomic layer deposition.
Wherein the first substrate comprises:
A method of forming an insulating layer that is a silicon substrate.
Forming a drain electrode and a source electrode on the second substrate; And
And forming a gate electrode on the gate insulating layer.
And forming a graphene layer connecting the electrodes of the field effect transistors adjacent to each other in the second direction perpendicular to the first direction on the insulating layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101631008B1 (en) * | 2015-01-08 | 2016-06-16 | 경희대학교 산학협력단 | Flexible thin film transistor using 2d transition metal dichalcogenides, electronic devices and manufacturing method thereof |
| CN107399733A (en) * | 2017-07-25 | 2017-11-28 | 长飞光纤光缆股份有限公司 | A kind of graphene film preparation facilities of volume to volume |
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| KR20130022575A (en) * | 2011-08-25 | 2013-03-07 | 그래핀스퀘어 주식회사 | Organic field-effect transistor, and preparing method of the same |
| KR20130070503A (en) * | 2011-12-19 | 2013-06-27 | 광주과학기술원 | Method for fabricating transfer printing substrate using concavo-convex structure, transfer printing substrate fabricated thereby and application thereof |
| KR20130126062A (en) * | 2012-05-10 | 2013-11-20 | 한국과학기술원 | Method for manufacturing flexible electronic device using water-soluble adhesive and flexible electronic device manufactured by the same |
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| KR20130070503A (en) * | 2011-12-19 | 2013-06-27 | 광주과학기술원 | Method for fabricating transfer printing substrate using concavo-convex structure, transfer printing substrate fabricated thereby and application thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101631008B1 (en) * | 2015-01-08 | 2016-06-16 | 경희대학교 산학협력단 | Flexible thin film transistor using 2d transition metal dichalcogenides, electronic devices and manufacturing method thereof |
| CN107399733A (en) * | 2017-07-25 | 2017-11-28 | 长飞光纤光缆股份有限公司 | A kind of graphene film preparation facilities of volume to volume |
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