KR101406172B1 - Continuous treatment apparatus and method of semiconductor wafer - Google Patents

Continuous treatment apparatus and method of semiconductor wafer Download PDF

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Publication number
KR101406172B1
KR101406172B1 KR1020130002207A KR20130002207A KR101406172B1 KR 101406172 B1 KR101406172 B1 KR 101406172B1 KR 1020130002207 A KR1020130002207 A KR 1020130002207A KR 20130002207 A KR20130002207 A KR 20130002207A KR 101406172 B1 KR101406172 B1 KR 101406172B1
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KR
South Korea
Prior art keywords
wafer
chamber
turntable
chambers
space
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KR1020130002207A
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Korean (ko)
Inventor
이원구
서현모
안현환
류수렬
최우진
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(주)에스티아이
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Priority to KR1020130002207A priority Critical patent/KR101406172B1/en
Priority to CN201480004276.5A priority patent/CN104919583A/en
Priority to PCT/KR2014/000143 priority patent/WO2014109526A1/en
Priority to TW103100660A priority patent/TWI555114B/en
Application granted granted Critical
Publication of KR101406172B1 publication Critical patent/KR101406172B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to an apparatus and a method for continuously processing semiconductor wafers, comprising: a plurality of chambers for processing wafers by a plurality of processes, wherein at least one chamber of the plurality of chambers includes: A susceptor fixedly mounted to support the wafer during the process; A lower housing fixed to an outer side of the susceptor, the lower housing forming an isolated process space below the wafer; An upper housing moving up and down to form an isolated process space on the wafer; And a turntable provided between the upper housing and the lower housing for transferring wafers between the chambers, thereby simplifying the structure of the apparatus and reducing power consumption.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous processing apparatus and method for semiconductor wafers,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for continuously processing semiconductor wafers, and more particularly, to an apparatus and a method for continuously processing semiconductor wafers capable of reducing the number of chambers and simplifying a structure for isolating chambers.

Generally, equipment for performing reflow in a post-semiconductor process includes a plurality of isolated chambers for differentiating atmospheres and temperatures in each process step. In order to allow a continuous process between the chambers, Is provided.

In particular, equipment using a turntable passing through each chamber has been developed in order to arrange a plurality of chambers in a circle and sequentially transfer the loaded semiconductor wafer to each chamber.

Such equipment is described in detail in US 6,827,789.

A total of six chambers including a loading chamber and an unloading chamber are shown in FIG. 1 of US 6,827,789, wherein the loaded wafer is sequentially moved to the next process chamber using a turntable, The wafer is transferred to the loading chamber, and the processed wafer is unloaded by the robot.

The U.S. Patent No. 6,827,789 discloses that the processing plate and the lower isolation chamber are configured to be movable up and down so that the wafer transferred by the turntable is isolated and the process proceeds.

The processing plate is generally referred to as a susceptor and includes a heater inside and a structure for vacuum-adsorbing the wafer is formed, which is a relatively heavy material. In order to move the wafer vertically, energy consumption is large, .

There is a problem that the manufacturing cost is increased due to the complexity of the drive unit and the power transmission structure for vertically moving the processing plate and the lower isolation chamber.

In addition, the US Patent No. 6,827,789 discloses that the outer side of the driving plate for vertically moving the processing plate and the lower isolation chamber is separated from the process section by using the bellows, but the bellows is damaged due to the frequent up- And the gas used in the process may be re-introduced into the apparatus without being exhausted due to the damage of the bellows, which may cause defects in the process.

In addition, the diameter of the turntable for rotating the wafers increases as the size of the wafers increases. As a result, the rotating plate may be bent or some deflection may occur, and the wafers may not be transported to the correct positions.

Further, since each of the plurality of chambers is always in a closed state, the wafer is always placed on the processing plate, so that even when the process is completed in a certain chamber while the process is proceeding in another chamber, Thereby causing a process failure.

In the case of U.S. Patent No. 6,827,789, when the processing plate and the lower isolation chamber are moved down together, the wafer ring is lowered together with the wafer and is seated on the turntable so that the wafer is separated from the processing plate, The wafer can be prevented from coming into contact with the processing plate, and the problem that the process failure occurs due to continuous heating from the processing plate can be prevented.

In this case, however, the wafer can no longer remain isolated and the wafer is exposed to the isolated chamber exterior space. Therefore, when the wafer is exposed to the external space until the process is performed in the next chamber after the wafer is processed by the heating process, there is a problem that the wafer temperature may be lowered and a process failure may occur.

Further, in the case of U.S. Patent No. 6,827,789, a groove for receiving the wafer support pin is formed on the upper surface of the processing plate. When heat is applied to the wafer while the wafer is supported on the processing plate, The transferred heat may be uneven and process failure may occur.

In order to solve the above problems, an object of the present invention is to provide a semiconductor wafer continuous processing apparatus capable of isolating a wafer from each chamber and moving between chambers, minimizing power consumption and simplifying the structure, Method.

Another object of the present invention is to provide an apparatus and a method for continuously processing semiconductor wafers, which can increase the durability of the apparatus and reduce maintenance and repair costs.

Another object of the present invention is to provide an apparatus and a method for continuously processing a semiconductor wafer, which can prevent some deflection or warping of a turntable that sequentially moves a wafer to each chamber.

Another object of the present invention is to provide an apparatus and method for continuously processing a semiconductor wafer in which a wafer in a specific chamber in which a process has been completed can be kept isolated from the susceptor until the process of another chamber is completed, .

According to another aspect of the present invention, there is provided an apparatus for continuously processing semiconductor wafers, including a plurality of chambers for processing wafers by a plurality of processes, The chamber includes a susceptor fixedly mounted to support the wafer during the process; A lower housing fixed to an outer side of the susceptor, the lower housing forming an isolated process space below the wafer; An upper housing moving up and down to form an isolated process space on the wafer; And a turntable provided between the upper housing and the lower housing for transferring wafers between the chambers.

The turntable may be moved up and down and rotated.

Also, one of the plurality of chambers may be a loading and unloading chamber for loading a wafer from the outside and unloading the processed wafer to the outside.

Wherein a chamber of the plurality of chambers from which the wafer is loaded is provided with a first lift pin for supporting and accepting a bottom surface of the wafer to be loaded by the robot; The lower housing providing a lower side of the isolated process space with the turntable in contact with the upper end; The upper housing may be provided on an upper side of the lower housing to partially move downward to provide an upper side of the isolated process space in contact with the upper portion of the turntable.

Wherein the susceptor is heated to a set process temperature with the wafer transferred by the turntable being seated on top by downward movement of the turntable, wherein the susceptor is processed by the process gas among the plurality of chambers; The lower housing providing a lower side of the isolated process space with the turntable in contact with the upper end; The upper housing may be provided on an upper side of the lower housing to provide an upper side of a process space in which a part of the upper and lower portions move up and down so that a lower end thereof is in contact with an upper portion of the turntable.

Wherein the process chamber is provided with a showerhead on an upper side of the process space; The showerhead may have a buffer space into which gas is introduced and a plurality of ejection openings formed in the buffer space downward toward the wafer.

Holes are formed in the turntable to expose an upper portion of the susceptor; And a seating ring having a stepped shape so that the wafer can be inserted into the hole so that it can be separated upward.

And a plurality of gas passages through which the process gas passes may be formed along the outer circumference of the seating ring.

The process chamber may be provided with a lift pin capable of moving up and down from the outside of the susceptor to support the bottom surface of the seating ring on which the wafer is placed and to release the seating ring upward from the hole.

The seat ring may be made of a non-metallic material and made of a ceramic material.

A heater for applying heat to the upper portion of the wafer may be provided on the upper side of the process space of the process chamber.

And a shower head having a buffer space into which the process gas flows and a plurality of injection openings formed in the buffer space uniformly downward toward the wafer, The heater may be configured to heat a process gas introduced into the buffer space.

The apparatus may further include a plurality of rollers that contact the bottom edge portion of the turntable when the turntable rotates.

The bottom of the turntable may be formed with a receiving groove for receiving a portion of the roller when the turntable moves downward.

The process gas passing through the gas passage of the seating ring may be exhausted through an exhaust port provided in a lower portion of the process chamber.

The upper housing may include a fixed portion fixed to the upper plate and a moving portion moved upward and downward from the lower portion of the fixed portion to be in contact with the upper surface of the turntable.

According to another aspect of the present invention, there is provided a method for continuously processing a semiconductor wafer, including: a first step of loading a wafer into a first chamber; Wherein the wafer is processed by sequentially transferring the wafer to the second through fifth chambers arranged in a circle together with the first chambers and the second through fifth chambers are moved downward from the upper side of the wafer when the wafer is processed In a process space isolated by an upper housing moving to a second stage; And a third step of unloading the wafer from the fifth chamber after the wafer is processed.

The third step may be to transfer the wafer processed in the fifth chamber to the first chamber to cool the wafer, and then to unload the wafer from the first chamber.

The second step is a step in which the wafer in the chamber of the second through fourth chambers is transferred from the upper chamber to the chamber while the wafer is being separated from the upper portion of the susceptor in the process space isolated by the upper housing. The process may be completed.

In the second step, one or more chambers selected from the second to fifth chambers may be heated by a heater provided on the upper side of the processing space.

According to the present invention, a process space can be sealed by using an upper housing that moves up and down on the upper side of a chamber without vertically moving the susceptor as a heavy object, thereby simplifying the structure of the apparatus and reducing power consumption There is an effect that can be reduced.

In addition, the present invention has the effect of eliminating the use of low-durability parts such as the conventional bellows, thereby reducing the time and cost required for maintenance and repair.

In addition, the present invention has the effect of preventing deflection of a turntable having a large diameter, preventing occurrence of a process failure, extending the maintenance and repair cycle of the device, and reducing cost.

The present invention further separates the wafer in the chamber from the susceptor by waiting until the process of the other chamber is completed, thereby preventing further heating of the wafer in the standby state, thereby further improving the reliability of the process There is an effect.

In addition, when waiting for the completion of the process of another chamber, the wafer can be kept in an isolated state, thereby further improving the reliability of the process.

1 is a schematic plan view of a continuous processing apparatus for a semiconductor wafer according to a preferred embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view in the AA direction in Fig.
3 is a detailed cross-sectional view of a seat ring according to the present invention.
FIGS. 4 to 13 are schematic cross-sectional views of the present invention shown in accordance with the movement and processing of the wafer.
14 is a cross-sectional structural view of a first process chamber according to another embodiment of the present invention.
15 is a cross-sectional view of a turntable according to another embodiment of the present invention.

Hereinafter, a semiconductor wafer continuous processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Fig. 1 is a schematic plan view of a semiconductor wafer continuous processing apparatus according to a preferred embodiment of the present invention, Fig. 2 is a schematic cross-sectional view in the AA direction in Fig. 1, and Fig. 3 is a detailed cross- .

1 and 2, the semiconductor wafer continuous processing apparatus according to the preferred embodiment of the present invention includes first to fifth chambers 100, 200, 300 (hereinafter, referred to as " , 400, 500).

The outer body 600 includes a disk-shaped lower plate 610, a disc-shaped upper plate 620 provided on the upper side of the lower plate 610, And a side housing 630 connected to an upper end and a lower end of the housing 630 at an edge thereof.

Although not shown in the drawing, the upper plate 620 is provided with parts such as piping for supplying process gas to the upper portions of the chambers 100, 200, 300, 400 and 500, and the side housing 630, in which the first chamber 100 is located, An opening may be formed to allow the robot arm to enter or retract for loading or unloading the wafer.

The first to fifth chambers 100, 200, 300, 400 and 500 and the connecting space 800, which is an inner space surrounded by the lower plate 610, the upper plate 620 and the side housing 630, And a turntable 700 having a rotation shaft at its center is provided.

The turntable 700 includes a single plate extending over the entire area of the plurality of chambers 100, 200, 300, 400 and 500. The turntable 700 is formed with holes 710 having the same number as the chambers 100, 200, 300, have.

The hole 710 is provided with a seating ring 720 on which the wafer is seated. The seating ring 720 can be detached from the turntable 700 together with the wafer in a state where the wafer is seated by up-and-down movement of a lift pin 240 described later.

3, the seating ring 720 is formed in a stepped shape and includes an inner seating end 722 formed around the inner diameter portion so that the wafer W is seated, And an outer seating end 723 formed around the outer periphery of the inner seating end 722 and the outer seating end 723 so as to be able to be seated in the hole 710 of the inner seating end 722. [ A gas passage hole 721 is formed.

Therefore, the gas evenly injected from the showerheads 160 and 260, which will be described later, to the upper surface of the wafer W is exhausted to the exhaust ports 150 and 250 through the gas passage 721. Since the exhaust flow of the process gas is formed from the upper side to the lower side with respect to the wafer W, less residue of the process gas is generated in the chamber.

The seating ring 720 comes into contact with the wafer W and the seating ring 720 comes into contact with the turntable 700. [ The turntable 700 is exposed to the connection space 800 outside the chamber so that the temperature of the connection space 800 is transferred to the wafer W through the turntable 700 and the seating ring 720, . Therefore, it is preferable that the seating ring 720 is made of a non-metallic material in order to block heat from being transferred to the wafer W. [

In addition, the seat ring 720 may be a ceramic having heat resistance because it is exposed to a high temperature process temperature, and may be any non-metallic material having heat resistance and low thermal conductivity.

The first to fifth chambers 100, 200, 300, 400, and 500 define an isolated space in which the wafers are processed, and the configurations for setting the temperature and the pressure for processing the wafers are provided for each chamber And each chamber can be kept isolated from the connection space portion 800 during the process so that the chambers can process wafers under different conditions.

The first chamber 100 is for loading a wafer by an external robot while unloading a wafer that has been processed in the fifth chamber 500 to an external robot, 2 will be described in detail.

2, the first chamber 100 includes a susceptor 110 for supporting a bottom surface of a wafer, a lower housing 102 installed on the outer side of the susceptor 110 and fixed on a lower plate 610, An upper housing 130 provided at an upper side of the lower housing 120 and fixed to the upper plate 620, a lift pin 140 supporting the lower face of the wafer in a vertically moved manner, An exhaust port 150 formed in the lower housing 120 to communicate with the inner space of the lower housing 120 and a showerhead 160 provided inside the upper housing 130 for spraying gas to the wafer, .

The susceptor 110 is provided with a structure for vacuum adsorption to fix the wafer on its upper surface and cooling means for cooling the wafer before unloading the processed wafer in the fifth chamber 500 Not shown). Since the susceptor 110 is not moved up and down but is fixed on the lower plate 610, a connection line for vacuum suction and a connection line for the wafer cooling means are fixed, which simplifies the structure .

The lower housing 120 is formed in a cylindrical shape so that the inner space 120a is isolated from the connection space 800 during the process and forms a lower side of the isolated process space, And is connected to an exhaust passage (not shown) through an exhaust port 150.

The inner space 130a of the upper housing 130 is isolated from the connection space 800 during the process and forms the upper side of the isolated process space and the gas hole 721 to communicate with the inner space 120a of the lower housing 130.

The upper housing 130 is cylindrical in order to maintain the isolated state of the wafer during the process and communicate with the connection space 800 when moving to the next chamber. And a moving part 132 provided below the fixing part 131 and capable of moving up and down.

The moving part 132 is moved downward by the driving part 133 so that the lower end of the moving part 132 is brought into contact with the upper part of the turntable 700. A sealing member (not shown) made of rubber, silicone, or the like may be provided at the lower end of the moving unit 132 to maintain the airtightness of the contact surface between the moving unit 132 and the turntable 700. Also, a hermetic member (not shown) may be provided on the side where the fixing portion 131 and the moving portion 132 are in contact with each other to maintain airtightness.

The lift pins 140 are provided so as to pass through the susceptor 710 so as to support the bottom surface of the wafer loaded by the robot and to mount the wafer on the upper surface of the susceptor 110 So as to be movable up and down.

When the wafer is unloaded, the bottom surface of the wafer placed on the seating ring 720 is supported and separated from the seating ring 720, and then moved up and down to take over the robot.

The shower head 160 uniformly injects a gas for cooling or a heated nitrogen gas onto the upper surface of the wafer. The shower head 160 includes a buffer space 161 in which the introduced gas is collected, A plurality of injection openings are formed at regular intervals on the bottom surface of the shower head 160 so that gas is injected downward in the direction of the shower head 160.

The connection space unit 800 surrounds the chambers 100, 200, 300, 400, and 500 and has an exhaust port 810 for exhausting gas remaining in the connection space unit 800.

According to such a configuration, it is not necessary to provide a structure such as a bellows for moving the susceptor 110 and the lower housing 120 up and down to form an isolated process space, thereby improving the durability of the apparatus and reducing the maintenance cost can do.

The second chamber 200 has the same structure as the first chamber 100 and includes a susceptor 210, a lower housing 220, an upper housing 230, a lift pin 240, an exhaust port 250, (260).

The susceptor 210 is provided with a heater (not shown) for applying heat to the wafer, and the wafer is vacuum-adhered to the upper surface of the susceptor 210 and fixed.

The lift pins 140 of the first chamber 100 directly support the bottom surface of the wafer but the lift pins 240 of the second chamber 200 support the bottom surface of the seating ring 720, And the wafer placed on the seating ring 720 can be moved up and down together. For this purpose, the lift pins 140 are positioned so as to be movable up and down on the outside of the susceptor 210.

The detailed structure of the remaining lower housing 220, the upper housing 230, and the shower head 260 is the same as that of the first chamber 100, and thus a detailed description thereof will be omitted.

In addition, the third to fifth chambers 300, 400 and 500, which are the other chambers, have the same configuration.

Hereinafter, the structure and operation of the semiconductor wafer continuous processing apparatus according to the preferred embodiment of the present invention will be described in detail with reference to the movement and processing of the wafer.

FIGS. 4 to 13 are schematic cross-sectional views of the present invention shown in accordance with the movement and processing of the wafer.

4, the wafer W is loaded into the first chamber 100 by the robot 2. The turntable 700 is moved downward and the bottom surface of the turntable 700 is moved downward The upper surface of the susceptor 110 is exposed through the holes 710 of the turntable 700 so as to be exposed to the upper portion of the lower housing 120.

The lift pins 140 move upward to support the bottom surface of the wafer W in a state where the wafer W is placed on the upper surface of the arm of the robot 2. [

The lift pins 140 are moved upward in a state where the robot 2 is positioned at the right position of the robot W. In the state where the lift pins 140 are moved upward, It is also possible to transfer the wafer W to load the wafer W onto the lift pin 140. [

The first chamber 100 is a chamber in which the wafer W is loaded from the outside and the first chamber 100 moves the wafer W moved from the fifth chamber 500 to the outside And is used as a chamber for unloading. That is, the first chamber 100 becomes a loading and unloading chamber in which the wafer W is loaded and unloaded.

Then, as shown in FIG. 5, the robot 2 is retracted and moved out of the loading and unloading chamber 100 with the wafer W placed on the lift pin 140. At this time, the robot 2 moves downward, and the wafer W is retracted with the wafer W fully raised on the lift pin 140. The robot 2 can be retracted in a state in which the lift pin 140 is moved upward while the wafer W is seated without moving downward.

This is applicable irrespective of the method as long as it can prevent the wafer W from being displaced by rubbing against the wafer W when the robot 2 moves backward by the relative movement of the robot 2 and the lift pin 140 .

6, the turntable 700 is moved upward to move the bottom edge of the wafer W to the inner seating end 722 of the seating ring 720 in a state in which the robot 2 is completely moved, .

When the lift pin 140 moves downward and the bottom of the wafer W is separated from the upper end of the lift pin 140 in this state, the turntable 700 rotates to be seated on the seating ring 720 as shown in FIG. And moves the wafer W to the second chamber 200 in the state of FIG.

That is, the rotation of the turntable 700 is performed in a state in which the turntable 700 is moved upward, and the rotation angle thereof is determined according to the number of chambers.

8, the turntable 700 moves downward to seat the wafer W on the susceptor 210 of the second chamber 200, and the turntable 700 moves further downward So that the bottom surface thereof contacts the upper end of the lower housing 220.

9, the driving unit 233 is driven to move the moving unit 232 downward, so that the lower end of the moving unit 232 is brought into contact with the upper surface of the turntable 700.

The inner space 220a surrounded by the lower housing 220 and the turntable 700 forms an upper side of the process space in which the inner space 230a surrounded by the upper housing 230 and the turntable 700 is isolated, Thereby forming the underside of the isolated process space and the necessary processing of the wafer W in the isolated process space.

The process gas is supplied to the inner space 230a of the upper housing 230 through the showerhead 260 for the treatment of the wafer W. The susceptor 210 is placed in a state where the wafer W is vacuum- It is heated to a specific temperature. The process gas is supplied to the inner space 220a of the lower housing 220 through the gas hole 721 of the seating ring 720 inserted into the hole 710 of the turntable 700 after processing the wafer W. [ And then exhausted through the exhaust port 250.

In addition, since the lift pin 240 does not penetrate the susceptor 210, it is not necessary to form a separate groove or hole for moving the lift pin 240 in the susceptor 210 up and down, The area of the susceptor 210 contacting the wafer W is formed to be large, so that the wafer W can be uniformly heated.

10 is a cross-sectional view of a state in which the wafer W is waiting in the second chamber 200 when the process is not completed in the other chambers 300, 400, and 500 while the process is completed. For example, if the process time of the second chamber 200 is 200 seconds and the process time of the third chamber 300 is 300 seconds, the process is completed for 100 seconds after the completion of the process of the second chamber 200, W to the third chamber 300.

That is, when the process time in the third chamber 300 is longer than the process time in the second chamber 200, since the wafer W can not be moved to the third chamber 300 immediately, It can be understood as a state of waiting until the process of the turntable 700 is completed and the turntable 700 can be rotated.

The wafer W is heated more than necessary when the wafer W is waiting on the susceptor 210. The lift pin 240 is moved upward to move the wafer W to the seating ring 720 The wafer W placed on the seating ring 720 is lifted at the same time, and the wafer W is lifted upward from the susceptor 210, and waits for a necessary time.

In addition, since the process chambers 200, 300, 400, and 500 in which the wafer W is processed are processed at a high temperature, the temperature inside the isolated process space is higher than the temperature of the connection space portion 800 outside the chambers When the inner space 230a of the upper housing 230 communicates with the connection space 800 when the wafer W having been processed at the high temperature in the second chamber 200 is waiting, The wafer W may be subjected to thermal shock by being exposed to the wafer 800.

Accordingly, in the present invention, the process space surrounded by the upper housing 230, the turntable 700, and the lower housing 220 is kept isolated from the connection space 800 even in the standby state of the wafer W The heated state of the wafer W can be maintained, and the process quality of the wafer W can be improved.

Then, as shown in FIG. 11, the moving part 232 of the upper housing 230 moves upward to transfer the wafer W to the third chamber 300 in the second chamber 200.

The turntable 700 moves upward and the seating ring 720 is inserted into the hole 710 of the turntable 700 together with the wafer W so that the external seating end 723 of the seating ring 720 So as to be seated on the upper surface of the turntable 700.

The lift pin 240 is then moved downward to separate the bottom surface of the seating ring 720 from the top of the lift pin 240 and then the turntable 700 is rotated to transfer the wafer to the third chamber 300 .

The subsequent mechanical process is repeated in the same manner as in the operation after FIG. 7, which is the operation after the wafer W is transferred from the first chamber 100 to the second chamber 200. As described above, the second chamber 200, the third chamber 300, the fourth chamber 400, and the fifth chamber 500 are all configured in the same manner, and when the wafer W is processed, the turntable 700, The moving part 232 of the upper housing 230 is moved downward along the fixing part 231 to form an isolated process space and when the wafer W is moved, the upper housing 230 And the turntable 700 moves up and rotate. In order to avoid repetition, the operation of the third to fifth chambers 300 to 500 is omitted, The wafer W moves to the first chamber 100 in the state of FIG.

In the second to fifth chambers 200 to 500, different processes may be performed. In the connection space 800 where the wafer W moves, non-reactive gases such as nitrogen heated to maintain the temperature of the wafer And the introduced process gas including the non-reactive gas can be exhausted through the exhaust portion 810. [

12 shows a state in which the turntable 700 is rotated and the wafer W is transferred to the first chamber 100 after the turntable 700 is moved downward, (110). The actual operation is transferred to the first chamber 100 in order to unload the processed wafer W in the fifth chamber 500 to the outside of the continuous processing apparatus.

The wafer W may be naturally cooled without being treated in the state of being moved to the first chamber 100 and then unloaded outwardly by the robot 2 to be described later, W may be forcibly cooled.

The cooling process is also performed in an isolated state of the process spaces 120a and 130a. To do this, the turntable 700 moves downward so that its bottom faces the upper end of the lower housing 120.

The moving part 132 of the upper housing 130 moves downward to form an isolated process space and then the cooling gas is sprayed onto the wafer W by the shower head 160 to move the wafer W Or cooling the wafer W until the wafer W is placed on the susceptor 110 on which the cooling water is circulated and the process is completed in the other chambers.

13, the lift pin 140 is moved upward to detach the wafer W from the susceptor 110, and then the robot 2 enters and supports the bottom surface of the wafer W The wafer W is unloaded in the first chamber 100, and then a new wafer is loaded into the first chamber 100 as described above, and the same process is performed.

The relative movement is performed between the robot 2 and the lift pin 140 so that interference does not occur as in the loading process of the wafer W described above. That is, the lift pin 140 moves downward before the robot 2 is released, or the robot 2 moves upward and unloads the wafer W while supporting the bottom surface of the wafer W. [

As described above, according to the present invention, a plurality of susceptors, each of which is a heavy material provided for each chamber, and a lower housing 120 for forming a lower side of the isolated process space are fixed without moving up and down, and the turntable 700 is rotated and moved up and down It is possible to simplify the mechanical structure and reduce the load on the driving unit, thereby reducing power consumption.

14 is a cross-sectional view of a third chamber 300 according to another embodiment of the present invention.

Referring to FIG. 14, an upper heater 370 is further provided on the upper side of the upper plate 620 to effectively control the process temperature.

When the upper heater 370 is provided on the upper side of the wafer W as described above, the lower surface of the wafer W is heated by the heat transferred from the susceptor 310, and the heat transferred to the upper heater 370 The upper surface of the wafer W is simultaneously heated, so that the upper and lower surfaces of the wafer W can be heated to a uniform temperature.

Particularly, in the reflow process, the shape of the solder ball is very important, and the upper and lower portions of the solder ball can be uniformly heated by the heater provided on the susceptor 310 and the upper heater 370 on the upper side, Lt; / RTI >

The upper heater 370 can be selectively added to the second to fifth chambers 200 to 500. The upper heater 370 can be variably installed depending on the kind of the wafer processing process to which the present invention is applied.

Residues of the process gas are adhered to the inner wall surface of the upper housing 230 in the inner space 230a of the upper housing 230. When the upper heater 230 is heated using the upper heater 370, 230 can be prevented from adhering to the inner wall surface, thereby reducing the generation of particles.

Since the showerhead 360 having the buffer space 361 is provided below the upper heater 370 to heat the process gas introduced into the buffer space 361 by the heat of the upper heater 370, The temperature of the process gas supplied through the head 360 can be rapidly increased, and the stability of the process can be further improved.

The present invention can be used as a device for performing reflow, and the formic acid vapor used in the reflow process is heated to a high temperature and then supplied into the chamber. In this case, if formaldehyde vapor is preheated and then introduced into the chamber, the formic acid vaporizes when it reaches the wafer, which causes loss, thereby lowering the uniformity of the process. In addition, in order to raise the temperature of formic acid vapor, a heating jacket is wrapped around the outer surface of the pipe provided on the outside of the reflow equipment, and when heated in advance, formic acid vapor adheres to the inner surface of the pipe.

Therefore, when the formic acid vapor is introduced into the buffer space 361 and heated by the upper heater 370 as in the present embodiment, it is heated immediately before being sprayed onto the wafer W, thereby preventing loss due to vaporization of formic acid , And the problem that the formic acid vapor adheres to the inner surface of the pipe can be prevented.

Although the upper heater 370 is illustrated as being positioned above the showerhead 360, the upper heater 370 may be inserted into the showerhead 360.

15 is a cross-sectional view of a turntable 700 according to another embodiment of the present invention.

Referring to FIG. 15, a receiving groove 730 is provided on the bottom surface of the turntable 700, and the roller 740 is accommodated when the turntable 700 is moved downward for processing.

The roller 740 is disengaged from the receiving groove 730 while the turntable 700 is moved upward to feed the wafer and the receiving groove 730 is not formed when the turntable 700 rotates Thereby supporting the bottom surface of the turntable 700.

When the turntable 700 rotates, the roller 740 rotates the turntable 700 smoothly and prevents deflection due to the weight of the turntable 700, .

Accordingly, replacement of the turntable 700 and maintenance cycle can be further extended to reduce costs and improve reliability of the apparatus.

The upper housing 130 and the upper housing 130 may be fixed to the fixing portions 131 and 231 and the moving portions 132 and 232 may be slidable in contact with the fixing portions 131 and 231. However, instead of the moving portions 132 and 232, The upper end of the bellows may be fixed to the upper plate 620 instead of the fixed portions 131 and 231 and the moving portions 132 and 232 and the lower end of the bellows may be fixed to the lower end of the bellows. It is also possible to carry out the modification with the constitution of moving up and down.

In the above embodiment, the wafer W is loaded into the first chamber 100 and then moved to the second chamber 200 without any additional processing. However, in the first chamber 100, The lift pin 140 is lowered to load the wafer W on the susceptor 110 and then the moving part 132 of the upper housing 130 is lowered to move the upper housing 130 The inner space formed by the turntable 700 and the lower housing 120 is isolated, and then a purge process is performed to remove the particles by injecting nitrogen.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And this also belongs to the present invention.

100: first chamber 110, 210, 310: susceptor
120, 220, 330: Lower housing 130, 230, 330:
140, 240, 340: lift pins 150, 250, 350:
160, 260, 360: showerhead 200: second chamber
370: upper heater 300: third chamber
400: fourth chamber 500: fifth chamber
600: outer body 610: lower plate
620: upper plate 700: turntable
710: hole 720: seat ring
721: Gas hole 722: Upper seat
723: lower seating end 730: receiving groove
740: Rollers

Claims (22)

1. A continuous processing apparatus for a semiconductor wafer including a plurality of chambers for processing a wafer by a plurality of processes,
In each of the plurality of chambers,
A susceptor fixedly mounted to support the wafer during the process;
A lower housing fixed to an outer side of the susceptor, the lower housing forming an isolated process space below the wafer;
An upper housing moving up and down to form an isolated process space on the wafer,
A plurality of holes are formed between the upper housing and the lower housing to expose an upper portion of the susceptor provided in each of the plurality of chambers, A turntable rotating to transfer the wafer between the susceptors provided in the chamber and moving the wafer up and down on each of the susceptors;
A plurality of seating rings inserted vertically into the plurality of holes to allow the wafer to be seated and vertically moved and rotated together with the turntable;
A semiconductor wafer processing apparatus delete The method according to claim 1,
Wherein one of the plurality of chambers comprises:
Wherein the semiconductor wafer is a loading and unloading chamber for loading a wafer from the outside and for unloading the processed wafer to the outside. The method according to claim 1,
Wherein a chamber from which the wafer is loaded, from among the plurality of chambers,
A lift pin for supporting and accepting the bottom surface of the wafer loaded by the robot;
The lower housing providing a lower side of the isolated process space with the turntable in contact with the upper end;
Wherein the upper housing is provided on an upper side of the lower housing and partly moves downward to provide an upper side of an isolated process space in contact with an upper portion of the turntable. The method according to claim 1,
The process chamber, which is processed by the process gas among the plurality of chambers,
Wherein the susceptor is heated to a set processing temperature in a state that the wafer transferred by the turntable is seated on top by downward movement of the turntable;
The lower housing providing a lower side of the isolated process space with the turntable in contact with the upper end;
Wherein the upper housing is provided on an upper side of the lower housing to provide an upper side of a process space in which a part of the upper housing moves up and down so that a lower end thereof is in contact with an upper portion of the turntable. 6. The method of claim 5,
Wherein the process chamber is provided with a showerhead on an upper side of the process space;
Wherein the showerhead has a buffer space into which gas is introduced and a plurality of injection openings formed uniformly downward toward the wafer in the buffer space. 6. The method of claim 5,
Wherein the seating ring is formed in a stepped shape so that the wafer is seated on the inner side. 8. The method of claim 7,
Wherein a plurality of gas passages through which the process gas passes are formed along the outer circumference of the seating ring. 8. The method of claim 7,
Wherein the process chamber is provided with a lift pin capable of moving up and down from the outside of the susceptor to support the bottom surface of the seating ring on which the wafer is seated and to release the seating ring upwardly from the hole An apparatus for continuous processing of semiconductor wafers. 8. The method of claim 7,
Wherein the seating ring is made of a non-metallic material. 11. The method of claim 10,
Wherein the seating ring is made of a ceramic material. 6. The method of claim 5,
Wherein an upper heater for applying heat to the upper portion of the wafer is provided on an upper side of the process space of the process chamber. 13. The method of claim 12,
A lower portion of the upper heater is provided with a buffer space into which a process gas flows and a showerhead in which a plurality of injection openings are formed uniformly downward toward the wafer in the buffer space;
Wherein the upper heater heats the process gas introduced into the buffer space. The method according to claim 1,
Further comprising a plurality of rollers that contact the bottom edge portion of the turntable when the turntable is rotated. 15. The method of claim 14,
Wherein a receiving groove is formed in a bottom surface of the turntable to receive a portion of the roller when the turntable moves downward. 11. The method of claim 10,
Wherein the process gas passing through the gas passage of the seating ring is exhausted through an exhaust port provided in a lower portion of the process chamber. The method according to claim 1,
Wherein the upper housing comprises a fixed portion fixed to the upper plate and a movable portion moved upward and downward from the lower side of the fixed portion and brought into contact with the upper surface of the turntable. A continuous processing method of a semiconductor wafer using the apparatus for continuously processing a semiconductor wafer according to claim 1,
A first step of loading a wafer into a first one of the plurality of chambers;
Wherein the wafer is processed by sequentially transferring the wafer to the second through fifth chambers arranged in a circle together with the first chambers and the second through fifth chambers are moved downward from the upper side of the wafer when the wafer is processed In a process space isolated by an upper housing moving to a second stage;
And a third step of unloading the wafer from the fifth chamber after the wafer is processed,
Wherein the wafer is transferred between the first to fifth chambers by up-down movement and rotation of the turntable while the wafer is seated on the seating ring. 19. The method of claim 18,
Wherein the third step is for transferring the wafer processed in the fifth chamber to the first chamber and cooling the wafer, and thereafter unloading the wafer from the first chamber. . 19. The method of claim 18,
The second step comprises:
The wafer of the chamber of the second to fourth chambers,
Wherein the wafer is held in a process space isolated by the upper housing until the process of the chamber in process is completed with the wafer being separated from the upper portion of the susceptor. 19. The method of claim 18,
The second step comprises:
Wherein one or more chambers selected from the second to fifth chambers are heated by a heater provided on the upper side of the processing space to heat the process gas injected to the wafer. The method according to claim 1,
Wherein the upper housing has a bellows shape.
KR1020130002207A 2013-01-08 2013-01-08 Continuous treatment apparatus and method of semiconductor wafer KR101406172B1 (en)

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CN201480004276.5A CN104919583A (en) 2013-01-08 2014-01-07 Apparatus and method for continuous processing of semiconductor wafer
PCT/KR2014/000143 WO2014109526A1 (en) 2013-01-08 2014-01-07 Apparatus and method for continuous processing of semiconductor wafer
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TW201428882A (en) 2014-07-16

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