KR101401678B1 - Method for manufacturing display device - Google Patents

Method for manufacturing display device Download PDF

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Publication number
KR101401678B1
KR101401678B1 KR1020127022178A KR20127022178A KR101401678B1 KR 101401678 B1 KR101401678 B1 KR 101401678B1 KR 1020127022178 A KR1020127022178 A KR 1020127022178A KR 20127022178 A KR20127022178 A KR 20127022178A KR 101401678 B1 KR101401678 B1 KR 101401678B1
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glass substrate
glass
display device
conductive polymer
film
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KR1020127022178A
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Korean (ko)
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KR20120129925A (en
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사카에 니시야마
카즈요시 요시다
토시히데 사쿠타
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신에츠 폴리머 가부시키가이샤
가부시키가이샤 엔에스씨
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2204/00—Glasses, glazes or enamels with special properties
    • C03C2204/08—Glass having a rough surface
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/31—Pre-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material
    • G02F2202/022—Materials and properties organic material polymeric
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/22—Antistatic materials or arrangements

Abstract

스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 설치하는 표시장치의 제조방법을 제공한다. 표시장치용 글래스 기판의 표면에 에칭액을 접촉하여, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하는 화학 연마 공정과, 화학 연마 공정 후의 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고, 막 형성 공정 후 글래스 기판의 전광선 투과율을, 판 두께 0.5mm의 글래스 기판에 대하여 87% 이상으로 한다.A manufacturing method of a display device in which a conductive film is provided on a glass substrate without using a sputtering method is provided. A chemical polishing step of bringing an etching liquid into contact with the surface of a glass substrate for a display device and setting an arithmetic average roughness Ra of the surface of the glass to 0.7 to 70 nm; And a film forming step of forming a conductive film of 1200 OMEGA / sq, wherein the total light transmittance of the glass substrate after the film forming step is 87% or more with respect to the glass substrate having a sheet thickness of 0.5 mm.

Description

표시장치의 제조방법{METHOD FOR MANUFACTURING DISPLAY DEVICE}[0001] METHOD FOR MANUFACTURING DISPLAY DEVICE [0002]

본 발명은, 글래스 기판의 표면에 투광성 도전막을 설치한 표시장치의 제조방법에 관한 것이다.The present invention relates to a manufacturing method of a display device in which a translucent conductive film is provided on the surface of a glass substrate.

액정표시장치는, 한 쌍의 글래스 기판으로 구성된 맞대어 붙인 글래스 기판의 사이에, 액정을 봉입하여 구성되어 있다. 그리고, 글래스 기판에 정전기가 대전하면, 액정의 표시 동작에 악영향을 주기 때문에, 글래스 기판의 표면에 도전막을 설치함으로써 대전을 방지하는 구성이 알려져 있다(예를 들면, 특허문헌 1).A liquid crystal display device is constituted by sealing a liquid crystal between opposing glass substrates constituted by a pair of glass substrates. In addition, there is known a configuration in which a conductive film is provided on the surface of a glass substrate to prevent electrification (for example, in Patent Document 1) since electrostatic charging of the glass substrate adversely affects the display operation of the liquid crystal.

여기서, 도전막으로서는, 일반적으로, 산화 인듐 주석(ITO:Indium Tin Oxide)이 사용되며, 투명전극은 스퍼터링법에 의해 막으로 형성되어 있다.Here, indium tin oxide (ITO) is generally used as the conductive film, and the transparent electrode is formed as a film by the sputtering method.

[선행기술문헌][Prior Art Literature]

[특허문헌][Patent Literature]

특허문헌 1 : 특개평 8-241626Patent Document 1: JP-A-8-241626

그러나, ITO를 구성하는 인듐이 희소금속일 뿐만 아니라, 스퍼터링법을 채용하는 한, 타켓재(ITO)로 적지않은 폐재(廢材)가 생긴다고 하는 문제가 있다.However, not only indium constituting ITO is a rare metal, but also there is a problem that a small amount of waste material is generated in the target material (ITO) as long as the sputtering method is adopted.

여기서, 사용자쪽으로 노출되는 노출측 글래스 기판 표면의 대전 방지막에 있어서는, 투명전극 정도의 낮은 저항율이 요구되지 않고, 대전을 방지할 수 있을 정도로 도전성을 발휘하면 족한 것으로 해석된다.Here, in the antistatic film on the surface of the exposed-side glass substrate exposed to the user side, a low resistivity as low as that of the transparent electrode is not required, and it can be interpreted that sufficient conductivity can be exhibited so as to prevent electrification.

본 발명은, 상기 문제점을 감안하여 이루어진 것으로, 스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 설치하는 표시장치의 제조방법을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a display device in which a conductive film is provided on a glass substrate without using a sputtering method.

상기 목적을 달성하기 위하여, 본 발명에 의한 표시장치의 제조방법은, 표시장치용 글래스 기판의 표면에 에칭액을 접촉시켜, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하는 화학 연마 공정과, 화학 연마 공정 후 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고, 막 형성 공정 후 글래스 기판의 전광선(全光線) 투과율을, 판 두께 0.6mm의 글래스 기판에 대하여 87% 이상으로 하는 것을 특징으로 한다.In order to achieve the above object, a method of manufacturing a display device according to the present invention is a method of manufacturing a display device, comprising: a step of bringing an etching liquid into contact with a surface of a glass substrate for a display device, And a film forming step of forming a conductive film of 400 to 1200 OMEGA / sq by applying a conductive polymer to the surface of the glass after the chemical polishing step, wherein the total light transmittance of the glass substrate after the film forming step is set to a plate thickness Is 87% or more with respect to a 0.6 mm glass substrate.

본 발명에서는, 화학 연마 공정에 있어서, 글래스 표면의 산술 평균 조도(Ra)를 0.7nm ~ 70nm로 설정하므로, 도전성 폴리머와의 확실한 접착성을 달성할 수 있다. 이에 대하여, Ra<0.7nm로서, 글래스 표면이 지나치게 평탄하면, 도전성 폴리머에 의한 도전막의 접착성이 열화하여, 밀착 시험에서 에타놀 등으로 용이하게 벗겨지는 결점이 발생한다. 한편, Ra>70nm로서, 글래스 표면이 지나치게 거칠면, 표시장치로서 선명한 표시 특성을 유지할 수 없다.In the present invention, since the arithmetic mean roughness (Ra) of the surface of the glass is set to 0.7 nm to 70 nm in the chemical polishing step, reliable adhesion with the conductive polymer can be achieved. On the other hand, when Ra <0.7 nm and the surface of the glass is excessively flat, the adhesive property of the conductive film by the conductive polymer is deteriorated, and defects such as easily peeling off with ethanol or the like occur in the adhesion test. On the other hand, if Ra> 70 nm and the glass surface is excessively rough, a clear display characteristic can not be maintained as a display device.

또한, 본 발명의 막 형성 공정에서는, 글래스 표면에 도전성 폴리머을 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성한다. 여기서, 저항율은, 체적 저항율(Volume Resistivity : Ω·cm)이 아닌, 단위면적(cm2) 당 표면 저항율(Surface Resistivity : Ω/sq) = 체적 저항율/막 두께이다. 액정표시장치 등의 투명전극의 경우는, 5 ~ 40Ω/sq 정도의 표면 저항값이 요구되지만, 대전방지 용도로는, 400 ~ 1200Ω/sq로도 충분한다. 단, 바람직하게는, 막 형성 공정 후의 글래스 기판이, 1000Ω/sq 이하의 표면 저항율로 설정된다.Further, in the film forming step of the present invention, a conductive polymer is applied to the surface of the glass to form a conductive film of 400 to 1200 OMEGA / sq. Here, the resistivity is not a volume resistivity (Ω · cm) but a surface resistivity (Ω / sq) per unit area (cm 2 ) = volume resistivity / film thickness. In the case of a transparent electrode such as a liquid crystal display device, a surface resistance value of about 5 to 40? / Sq is required, but for an antistatic use, 400 to 1200? / Sq is sufficient. Preferably, however, the glass substrate after the film forming step is set to a surface resistivity of 1000? / Sq or less.

본 발명에서는, 막 형성 공정 후 글래스 기판의 HAZE율이, 판 두께 0.6mm의 글래스 기판으로 평가하여 1.5% 미만으로 설정되는 것이 바람직하다. 여기서, HAZE율은, 확산 투과율/전광 투과율×100을 의미하며, JISK 7136에 기초하여 특정되는 값이다.In the present invention, it is preferable that the HAZE ratio of the glass substrate after the film forming process is set to less than 1.5% by evaluation with a glass substrate having a plate thickness of 0.6 mm. Here, the HAZE ratio means diffusion transmittance / total light transmittance x 100, and is a value specified based on JIS K 7136.

일반적으로, 도전막의 막 두께가 두꺼울수록, 표면 저항율이 낮아져 도전성이 높아지나, 그 반면, HAZE율이 증가하여 투명성이 낮아진다. 그래서, 이 점을 고려하여, 도전성 폴리머의 막 두께는, 바람직하게는, 100nm ~ 250nm로 설정된다.In general, the thicker the conductive film, the lower the surface resistivity and the higher the conductivity, while the higher the haze ratio, the lower the transparency. Therefore, in consideration of this point, the film thickness of the conductive polymer is preferably set to 100 nm to 250 nm.

본 발명의 글래스 기판은, 무알칼리 글래스로 구성되는 것이 바람직하지만, 보다 바람직하게는, 알루미노 규산염 글래스로 구성해야 한다. 또한, 도전성 폴리머로서는, 폴리아세틸렌, 폴리티오펜류 등이 적절하게 사용되지만, 보다 바람직하게는, 폴리티오펜계 도전성 폴리머를 사용해야 한다.The glass substrate of the present invention is preferably composed of an alkali-free glass, but more preferably it should be composed of an aluminosilicate glass. As the conductive polymer, polyacetylene, polythiophene and the like are suitably used, but more preferably, a polythiophene conductive polymer is used.

본 발명의 에칭액은, 글래스 표면이 적당히 거칠어지는 조성이면 특별히 한정되지 않지만, 바람직하게는, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산을 함유하여 구성된다.The etching solution of the present invention is not particularly limited as long as the surface of the glass is adequately roughened, but preferably contains 0.5 to 3% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid and 0 to 5% .

한편, 본 발명의 표시장치는, 바람직하게는, 액정표시장치이고, 도전성 폴리머는, 맞대어 붙인 글래스 기판의 노출측 표면에 막으로 형성된다.On the other hand, the display device of the present invention is preferably a liquid crystal display device, and the conductive polymer is formed as a film on the exposed-side surface of the glass substrate to which it is attached.

이상 설명한 본 발명에 의하면, 스퍼터링법을 사용하지 않고, 글래스 기판에 도전막을 형성하는 것이 가능하여, 대전 방지막을 염가로 형성할 수 있다.According to the present invention described above, it is possible to form a conductive film on a glass substrate without using a sputtering method, so that an antistatic film can be formed at low cost.

이하, 실시예를 설명하지만, 특히 본 발명을 한정하는 것은 아니다.EXAMPLES Hereinafter, examples will be described, but the present invention is not limited thereto.

<공시 글래스><Disclosure Glass>

100mm×100mm×0.6mm의 알루미노 규산염 글래스의 글래스 기판을 여러장 준비한다.Several glass substrates of alumino silicate glass of 100 mm x 100 mm x 0.6 mm are prepared.

<작업순서><Operation sequence>

(1) 각 글래스 판을 물로 세척하고, 에칭액으로 화학 연마하였다. 여기서, 에칭액으로서, 각종의 조성을 준비하고, 연마 시간도 적절하게 변경하였다.(1) Each glass plate was washed with water and chemically polished with an etching solution. Here, various compositions were prepared as the etching solution, and the polishing time was appropriately changed.

(2) 각 글래스 판을 물로 세척한 후, IPA(이소프로필알콜)에 침적하여 치환 처리를 행하고, 드라이어로 건조시켰다.(2) Each glass plate was washed with water, immersed in IPA (isopropyl alcohol) to carry out a substitution treatment, and dried with a dryer.

(3) 폴리티오펜계 도전성 폴리머인 세플지다(seplegyda)(신에츠(信越) 폴리머)를 글래스 판의 표면에 도포하였다. 심선 No6, No8, No10의 바코터(Bar coater)를 사용하여, 120nm, 160nm, 200nm 정도의 막 두께로 도포한 3 그룹을 생성하였다.(3) A polythiophene-based conductive polymer, seplegyda (Shin-Etsu Polymer), was applied to the surface of the glass plate. Three groups were formed by applying a film thickness of about 120 nm, 160 nm, and 200 nm using a bar coater of core wires No6, No8, and No10.

(4) 도전성 폴리머 도포 후의 건조는, 건조로에서 150℃로 10분간 실행하였다.(4) Drying after application of the conductive polymer was carried out at 150 DEG C for 10 minutes in an oven.

<결과 평가><Result evaluation>

(1) 밀착시험(1) Adhesion test

건조시킨 글래스 판에 대하여, 셀로판 테이프를 사용하여 박리시험을 실시함과 함께, 각 글래스 판의 화학 연마 후의 산술 평균 조도(Ra)와의 관계를 검증하였다.The dried glass plate was subjected to a peeling test using a cellophane tape, and the relationship between the glass plate and the arithmetic average roughness (Ra) after chemical polishing of each glass plate was verified.

그 결과, 산술 평균 조도 Ra = 0.7nm ~ 70nm 정도이면, 글래스와 도전막의 밀착성이 유지되는 것을 확인하였다.As a result, it was confirmed that the adhesion between the glass and the conductive film was maintained when the arithmetic mean roughness Ra was about 0.7 nm to 70 nm.

한편, 에칭액의 조성과, 연마 시간이 변하면, 화학 연마 후의 글래스 판의 산술 평균 조도(Ra)가 변화하고, 일반적으로, 연마 시간이 길수록, 또한, 불화수소산 농도가 진할수록 산술 평균 조도(Ra)가 증가한다.On the other hand, when the composition of the etching liquid and the polishing time are changed, the arithmetic mean roughness Ra of the glass plate after chemical polishing changes, and generally, the longer the polishing time and the higher the hydrofluoric acid concentration, .

그래서, 이상의 경향과, 작업성을 고려하면, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산, 나머지 물로 이루어진 에칭액을 사용하여, 수분간(1 ~ 2분)의 화학 연마 공정에서, 글래스 표면을 5㎛(편면 2.5㎛) 정도 에칭하는 것이 적절한 것을 발견하였다.Considering the above tendency and the workability, it is preferable to use an etching solution composed of 0.5 to 3% by weight of hydrofluoric acid, 0 to 10% by weight of hydrochloric acid, 0 to 5% by weight of sulfuric acid, 2 minutes), it was found to be appropriate to etch about 5 탆 (2.5 탆 in one side) of the glass surface.

(2) 광학특성(2) Optical characteristics

그래서, 이상의 조건으로 설정된 화학 연마 공정을 거친 3 그룹의 글래스 판에 대하여, 전광선 투과율과, 표면 저항율과, HAZE율을 계측하면 아래와 같았다. 여기서, 투과율은, 분광색채계 SD-5000(일본전색공업(日本電色工業))을 사용하여, JISK 7361-1에 기초하여 계측하였다. 또한, HAZE율은, 탁도계 NDH 5000(일본전색공업)을 사용하여, JISK 7136에 기초하여 계측하였다. 표면 저항은, 로레스타 MCP-T250(미쓰비시 화학)을 사용하여, JISK 7194에 기초하여 계측하였다.Thus, the total light transmittance, the surface resistivity, and the HAZE ratio of the three groups of glass plates subjected to the chemical polishing process set above were measured as follows. Here, the transmittance was measured based on JIS K 7361-1 by using a spectroscopic colorimeter SD-5000 (Nippon Denko Kogyo Co., Ltd.). The HAZE ratio was measured based on JISK 7136 using a turbidimeter NDH 5000 (Japan Fuling Industry Co., Ltd.). The surface resistance was measured based on JIS K 7194 using Loresta MCP-T250 (Mitsubishi Chemical).

제1그룹(No 6)The first group (No 6) 제2그룹(No 8)The second group (No 8) 제3그룹(No 10)The third group (No 10) 투과율(평균치)Transmittance (average value) 88.5%88.5% 88.2%88.2% 87.0%87.0% 저항율Resistivity 800~1100800 ~ 1100 600~800600 to 800 400~600400 to 600 HAZE율HAZE rate 0.86~1.080.86 to 1.08 0.96~1.020.96 to 1.02 1.1~1.51.1 to 1.5

Claims (7)

표시장치용 글래스 기판의 표면에 에칭액을 접촉하여, 글래스 표면의 산술평균 조도(Ra)를 0.7nm ~ 70nm로 설정하는 화학 연마 공정과,
화학 연마 공정 후의 글래스 표면에 도전성 폴리머를 도포하여, 400 ~ 1200Ω/sq의 도전막을 형성하는 막 형성 공정을 구비하고,
막 형성 공정 후 글래스 기판의 전광선 투과율을, 판 두께 0.6mm의 글래스 기판에 대하여 87% 이상으로 한 것을 특징으로 하는 표시장치의 제조방법.A chemical polishing step of bringing an etching liquid into contact with the surface of a glass substrate for a display device and setting an arithmetic average roughness Ra of the surface of the glass to 0.7 nm to 70 nm,
And a film forming step of forming a conductive film of 400 to 1200? / Sq by applying a conductive polymer to the surface of the glass after the chemical polishing step,
Wherein the total light transmittance of the glass substrate after the film forming process is 87% or more with respect to the glass substrate having a thickness of 0.6 mm. 제1항에 있어서,
막 형성 공정 후 글래스 기판의 HAZE율이, 판 두께 0.6mm의 글래스 기판에서 1.5% 미만인 것을 특징으로 하는 표시장치의 제조방법.The method according to claim 1,
Wherein a HAZE ratio of the glass substrate after the film forming process is less than 1.5% in a glass substrate having a thickness of 0.6 mm. 제1항 또는 제2항에 있어서,
상기 도전성 폴리머의 막 두께는, 100nm ~ 250nm인 것을 특징으로 하는 표시장치의 제조방법.3. The method according to claim 1 or 2,
Wherein the conductive polymer has a thickness of 100 nm to 250 nm. 제3항에 있어서,
상기 글래스 기판은, 알루미노 규산염 글래스로 구성되어 있는 것을 특징으로 하는 표시장치의 제조방법.The method of claim 3,
Wherein the glass substrate is made of an aluminosilicate glass. 제4항에 있어서,
폴리티오펜계 도전성 폴리머가 사용되는 것을 특징으로 하는 표시장치의 제조방법.5. The method of claim 4,
Wherein a polythiophene-based conductive polymer is used. 제5항에 있어서,
상기 에칭액은, 0.5 ~ 3중량%의 불화수소산, 0 ~ 10중량%의 염산, 0 ~ 5중량%의 황산을 함유하여 구성되어 있는 것을 특징으로 하는 표시장치의 제조방법.6. The method of claim 5,
Wherein the etching solution comprises 0.5 to 3 wt% of hydrofluoric acid, 0 to 10 wt% of hydrochloric acid, and 0 to 5 wt% of sulfuric acid. 제6항에 있어서,
상기 표시장치는, 액정표시장치이고, 상기 도전성 폴리머는, 맞대어 붙인 글래스 기판의 노출 표면에 막으로 형성되는 것을 특징으로 하는 표시장치의 제조방법.The method according to claim 6,
Wherein the display device is a liquid crystal display device, and the conductive polymer is formed as a film on an exposed surface of the glass substrate to which the conductive polymer is adhered.
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