KR101399117B1 - Substrate etching apparatus using remote plasma, and substrate etching method using the same - Google Patents

Substrate etching apparatus using remote plasma, and substrate etching method using the same Download PDF

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KR101399117B1
KR101399117B1 KR1020070105444A KR20070105444A KR101399117B1 KR 101399117 B1 KR101399117 B1 KR 101399117B1 KR 1020070105444 A KR1020070105444 A KR 1020070105444A KR 20070105444 A KR20070105444 A KR 20070105444A KR 101399117 B1 KR101399117 B1 KR 101399117B1
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etching
gas
chamber
substrate
remote plasma
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KR20090039936A (en
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최종용
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주성엔지니어링(주)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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Abstract

본 발명은 원격플라즈마를 이용한 기판식각방법 및 장치를 개시한다. 본 발명의 기판식각방법은, 챔버의 내부에 기판을 안치하는 제1단계; 상기 챔버의 내부로 식각유도가스를 공급하는 제2단계; 상기 챔버의 내부로 식각가스의 활성종을 공급하여 상기 기판을 식각하는 제3단계를 포함한다.The present invention discloses a method and apparatus for etching a substrate using a remote plasma. A method of etching a substrate of the present invention includes: a first step of depositing a substrate inside a chamber; A second step of supplying etching induction gas into the chamber; And a third step of etching the substrate by supplying active species of the etching gas into the chamber.

본 발명에 따르면, 챔버의 외부에서 활성화된 식각가스를 가스분배판을 통해 챔버의 내부로 균일하게 분사하기 때문에 기판식각장치의 내부에서 식각가스의 균일도가 향상된다. 또한 식각유도가스의 영향으로 인해 식각속도가 증가하는 한편 대면적 기판이나 대형의 트레이에 안치된 모든 기판에 걸쳐서 균일한 표면조도를 얻을 수 있게 된다.According to the present invention, uniformity of the etching gas inside the substrate etching apparatus is improved because the activated etching gas outside the chamber is uniformly injected into the chamber through the gas distribution plate. In addition, the etch rate is increased due to the influence of the etching induction gas, and a uniform surface roughness can be obtained over a large-sized substrate or all the substrates placed on a large-sized tray.

식각, 원격 플라즈마 Etching, remote plasma

Description

원격 플라즈마를 이용한 기판 식각장치 및 이를 이용한 기판 식각방법{Substrate etching apparatus using remote plasma, and substrate etching method using the same}TECHNICAL FIELD The present invention relates to a substrate etching apparatus using a remote plasma and a substrate etching method using the same,

본 발명은 기판 식각장치 및 식각방법에 관한 것으로서, 구체적으로는 원격플라즈마 발생장치를 통해 챔버의 내부로 공급되는 식각가스와 직접 챔버의 내부로 공급되는 식각유도가스를 이용하여 대면적 기판의 표면에서 균일한 표면조도를 구현하는 식각장치 및 식각방법에 관한 것이다.The present invention relates to a substrate etching apparatus and an etching method. More particularly, the present invention relates to a substrate etching apparatus and an etching method using an etching gas supplied into a chamber through a remote plasma generating apparatus and an etching induction gas supplied directly into the chamber, To an etching apparatus and an etching method that realize uniform surface roughness.

일반적으로 반도체소자를 제조하기 위해서는 기판에 특정 물질의 박막을 증착하는 박막증착공정, 감광성 물질을 사용하여 이들 박막 중 선택된 영역을 노출 또는 은폐시키는 포토리소그라피 공정, 선택된 영역의 박막을 제거하여 목적하는 대로 패터닝하는 식각(etching)공정 등을 수행하여야 한다.Generally, in order to manufacture a semiconductor device, a thin film deposition process for depositing a thin film of a specific material on a substrate, a photolithography process for exposing or hiding a selected region of the thin film using a photosensitive material, An etching process for patterning should be performed.

태양전지를 제조하는 경우에도 이와 같이 기판에 박막을 증착하고 표면을 식각하는 공정이 사용되고 있다.Even when a solar cell is manufactured, a process of depositing a thin film on a substrate and etching the surface is used.

예를 들어 단결정 또는 다결정 실리콘 기판을 이용한 태양전지를 제조하기 위해서는 광흡수율을 높이기 위하여 표면에 미세한 요철구조를 형성하여야 하는데, 이를 위해 플라즈마 식각이나 습식식각 방법을 이용하고 있다.For example, in order to manufacture a solar cell using a single crystal or a polycrystalline silicon substrate, a fine concave-convex structure should be formed on the surface in order to increase the light absorption rate. For this purpose, plasma etching or wet etching is used.

플라즈마 식각을 위해서는 RIE(Reactive Ion Etching) 장치의 내부에 기판을 반입한 후에 식각가스를 분사하여 플라즈마를 발생시켜야 한다.In order to perform plasma etching, a plasma should be generated by injecting an etching gas into the RIE (Reactive Ion Etching) device.

도 1은 일반적인 RIE장치(10)의 개략적인 구성을 나타낸 것으로서, 반응공간을 형성하는 챔버(11)의 내부에 기판안치대(13)가 설치되고, 기판안치대(13)의 상부에 가스분배판(14)이 설치된다.1 shows a schematic configuration of a general RIE apparatus 10 in which a substrate table 13 is provided in a chamber 11 forming a reaction space and a gas distribution plate A plate 14 is provided.

챔버(11)의 상부는 챔버리드(12)에 의해 밀폐되며, 가스분배판(14)은 상기 챔버리드(12)의 하부에 소정 간격 이격되어 결합된다.The upper portion of the chamber 11 is sealed by the chamber lid 12 and the gas distribution plate 14 is coupled to the lower portion of the chamber lid 12 by a predetermined distance.

챔버리드(12)의 중앙부에는 식각가스를 공급하는 가스공급관(15)이 관통하여 연결되며, 기판안치대(13)에는 RF전력을 제공하는 RF전원(16)이 연결된다. 챔버리드(12)는 도시된 바와 같이 접지될 수도 있으나 제2의 RF전원에 연결될 수도 있다. A gas supply pipe 15 for supplying etching gas is connected to the central portion of the chamber lead 12 and an RF power supply 16 for supplying RF power is connected to the substrate pedestal 13. The chamber lid 12 may be grounded as shown, but may be connected to a second RF power source.

따라서 가스분배판(14)을 통해 식각가스를 분사하면서 기판안치대(13)에 RF전력을 인가하면 기판안치대(13)와 가스분배판(14)의 사이에 RF전기장이 형성되며, RF전기장에 의해 가속된 전자가 중성기체와 충돌함으로써 이온과 활성종의 혼합체인 플라즈마가 형성된다. 이때 RF전기장에 의해 가속된 이온이 기판으로 입사하여 기판의 표면을 식각하게 되는 것이다.Therefore, if RF power is applied to the substrate table 13 while spraying the etching gas through the gas distribution plate 14, an RF electric field is formed between the substrate table 13 and the gas distribution plate 14, The electrons accelerated by the electrons collide with the neutral gas to form a plasma which is a mixture of ions and active species. At this time, the ions accelerated by the RF electric field are incident on the substrate, and the surface of the substrate is etched.

그런데 이러한 RIE장치(10)의 내부에 기판을 1매씩 반입하여 처리하여서는 대량 생산에 적용하기 어렵기 때문에 최근의 태양전지 제조시스템에서는 대형의 트레이에 수십 개의 기판을 안치시킨 상태에서 트레이 단위로 기판을 운반 및 처리하는 경우가 보통이다.However, since it is difficult to apply a single substrate to the inside of the RIE apparatus 10 for mass production, in recent solar cell manufacturing systems, a plurality of substrates are placed in a large tray, It is common to carry and process.

즉, 다수의 기판이 안치된 트레이가 반입되면, 상기 다수의 기판에 대해 한꺼번에 플라즈마 식각공정을 진행하게 되는 것이다.That is, when a tray on which a plurality of substrates are placed is brought in, the plasma etching process is performed on the plurality of substrates all at once.

그런데 대형 트레이를 반입하기 위해 챔버(11)가 커지면 플라즈마 균일도를 확보하는 것이 어려워지며, 이로 인해 장치의 중앙부에 위치하는 기판(s)과 주변부에 위치하는 기판(s)의 표면조도가 균일하지 않게 되는 문제점이 발생한다.However, when the chamber 11 is large in order to carry the large tray, it becomes difficult to secure the plasma uniformity. As a result, the substrate s located at the center of the apparatus and the substrate s located at the peripheral portion are not uniform .

이를 방지하기 위해서 습식식각을 진행할 수도 있으나, 결정질 실리콘은 결정방향에 따라 식각속도 및 식각방향이 달라지는 특성이 있기 때문에 플라즈마 식각에 비해 균일한 표면조도를 확보하는데 어려움이 있다.In order to prevent this, the wet etching may be performed. However, since the crystalline silicon has a characteristic that the etching rate and the etching direction are changed according to the crystal direction, it is difficult to obtain a uniform surface roughness compared to the plasma etching.

본 발명은 이러한 문제점을 해결하기 위한 것으로서, 플라즈마를 이용하는 대형의 식각장치에서 기판에 대한 식각균일도를 향상시킬 수 있는 방법을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a method for improving etch uniformity of a substrate in a large etching apparatus using plasma.

본 발명은 상기 목적을 달성하기 위하여, 챔버의 내부에 기판을 안치하는 제1단계; 상기 챔버의 내부로 식각유도가스를 공급하는 제2단계; 상기 챔버의 내부로 식각가스의 활성종을 공급하여 상기 기판을 식각하는 제3단계를 포함하는 기판 식각 방법을 제공한다.In order to achieve the above object, the present invention provides a method of manufacturing a plasma display panel, comprising: a first step of placing a substrate in a chamber; A second step of supplying etching induction gas into the chamber; And a third step of etching the substrate by supplying active species of the etching gas into the chamber.

상기 기판 식각 방법에서 상기 식각유도가스는 N 또는 O 중에서 적어도 하나의 원소를 포함하는 것을 특징으로 할 수 있으며, 이러한 식각유도가스로는 NO, N2O, N2 또는 O2 등이 사용될 수 있다.In the above substrate etching method, the etching induction gas may include at least one element selected from the group consisting of N and O, and NO, N 2 O, N 2 or O 2 may be used as the etching induction gas.

또한 상기 식각가스는 NF3, F2, SF6, Cl2 또는 CHF3인 것을 특징으로 할 수 있다.The etching gas may be NF 3 , F 2 , SF 6 , Cl 2, or CHF 3 .

또한 상기 식각가스와 상기 식각유도가스의 비율은 10:1 ~ 2:1의 범위인 것을 특징으로 할 수 있다.The ratio of the etching gas to the etching inducing gas may be in the range of 10: 1 to 2: 1.

또한 상기 제1단계에서는, 다수의 기판을 트레이에 안치하여 상기 챔버의 내부로 반입하는 것을 특징으로 할 수 있다.In the first step, a plurality of substrates are placed on a tray and transferred into the chamber.

또한 상기 제2단계의 이전에는, 상기 챔버의 내부압력을 100mTorr 내지 5Torr의 범위로 설정하는 과정을 포함하는 것을 특징으로 할 수 있다.And setting the internal pressure of the chamber to a range of 100 mTorr to 5 Torr prior to the second step.

또한 상기 제3단계에서 상기 식각가스는 비반응성 가스와 함께 상기 챔버의 내부로 공급되는 것을 특징으로 할 수 있다.In addition, in the third step, the etching gas is supplied into the chamber together with the non-reactive gas.

또한 상기 제3단계의 이후에, 상기 제2단계 및 상기 제3단계를 1사이클로 하는 공정을 1회 이상 반복하는 것을 특징으로 할 수 있다.And after the third step, the step of converting the second step and the third step into one cycle is repeated one or more times.

또한 본 발명은, 반응공간을 형성하는 챔버; 상기 챔버의 내부에 설치되는 기판안치대; 상기 기판안치대의 상부에 설치되는 가스분배판; 상기 챔버의 외부에 설치되는 원격플라즈마 발생장치; 상기 원격플라즈마 발생장치에서 활성화된 식각가스를 상기 가스분배판의 상부로 공급하는 가스공급관; 상기 기판안치대의 상부로 식각유도가스를 공급하는 가스분사부를 포함하는 기판 식각 장치를 제공한다.The present invention also provides a reaction chamber comprising: a chamber forming a reaction space; A substrate table installed inside the chamber; A gas distribution plate installed on the substrate bench; A remote plasma generator disposed outside the chamber; A gas supply pipe for supplying etching gas activated in the remote plasma generator to an upper portion of the gas distribution plate; And a gas injection unit for supplying an etching induction gas to an upper portion of the substrate bench.

상기 기판 식각 장치에서 상기 가스공급관에는 상기 식각가스와 함께 공급할 비반응성 가스를 공급하기 위한 제2의 가스공급관이 연결되는 것을 특징으로 할 수 있다.In the substrate etching apparatus, a second gas supply pipe for supplying a non-reactive gas to be supplied together with the etching gas may be connected to the gas supply pipe.

또한 상기 가스분사부는 상기 챔버의 측벽 또는 리드(lid)를 관통하여 설치되는 다수의 인젝터이거나 상기 챔버의 내부에 설치되는 가스링인 것을 특징으로 할 수 있다.The gas injection unit may be a plurality of injectors installed through sidewalls or lids of the chamber, or may be a gas ring installed inside the chamber.

또한 상기 기판 식각 장치는, 상기 챔버의 내부에 플라즈마를 발생시키기 위한 플라즈마발생수단을 더 포함하는 것을 특징으로 할 수 있으며, 이때 상기 플라즈마발생수단은 상기 기판안치대 또는 상기 챔버의 리드에 연결되는 RF전원을 포함할 수 있다.Further, the substrate etching apparatus may further include plasma generating means for generating plasma in the chamber, wherein the plasma generating means includes an RF Power supply.

본 발명에 따르면, 챔버의 외부에서 활성화된 식각가스를 가스분배판을 통해 챔버의 내부로 균일하게 분사하기 때문에 기판식각장치의 내부에서 식각가스의 균일도가 향상된다. 또한 식각유도가스의 영향으로 인해 식각속도가 증가하는 한편 대면적 기판이나 대형의 트레이에 안치된 모든 기판에 걸쳐서 균일한 표면조도를 얻을 수 있게 된다.According to the present invention, uniformity of the etching gas inside the substrate etching apparatus is improved because the activated etching gas outside the chamber is uniformly injected into the chamber through the gas distribution plate. In addition, the etch rate is increased due to the influence of the etching induction gas, and a uniform surface roughness can be obtained over a large-sized substrate or all the substrates placed on a large-sized tray.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

도 2는 본 발명의 실시예에 따른 플라즈마 식각장치(100)의 개략적인 구성을 나타낸 단면도이다.2 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus 100 according to an embodiment of the present invention.

본 발명의 플라즈마 식각장치(100)에서는 반응공간을 형성하는 챔버(110)의 내부에 기판안치대(130)가 설치되고, 기판안치대(130)의 상부에 가스분배판(140)이 설치된다. 또한 챔버(110)의 상부는 챔버리드(120)에 의해 밀폐되며, 가스분배판(140)은 챔버리드(120)의 하부에 소정 간격 이격되어 결합된다.In the plasma etching apparatus 100 of the present invention, the substrate placing table 130 is installed in the chamber 110 forming the reaction space, and the gas distribution plate 140 is installed on the substrate placing table 130 . The upper portion of the chamber 110 is sealed by the chamber lid 120 and the gas distribution plate 140 is coupled to the lower portion of the chamber lid 120 at a predetermined distance.

챔버(110)의 외부에는 NF3, F2, SF6, Cl2, CHF3 등의 식각가스를 활성종과 이온의 혼합체인 플라즈마 상태로 활성화시키는 원격플라즈마 발생장치(160)가 설치되고, 원격플라즈마 발생장치(160)와 챔버리드(120)의 사이에는 제1가스공급관(150)이 연결된다. 원격플라즈마 발생장치(160)에는 RF전력을 제공하는 RF전원(170)이 연결된다.A remote plasma generator 160 for activating etching gas such as NF 3 , F 2 , SF 6 , Cl 2 , CHF 3 and the like as a mixture of active species and ions is installed outside the chamber 110, A first gas supply pipe 150 is connected between the plasma generator 160 and the chamber lid 120. The remote plasma generator 160 is connected to an RF power supply 170 that provides RF power.

즉, 본 발명의 플라즈마 식각장치(100)는 챔버(110)의 내부에서 플라즈마를 직접 생성하는 것이 아니라 챔버(110) 외부의 원격플라즈마 발생장치(160)에서 식각가스를 활성화시킨 다음 이를 가스분배판(140)을 통해 챔버(110)의 내부로 균일 하게 분사하기 때문에 챔버 내부에서 식각가스의 균일도를 훨씬 높일 수 있다.That is, the plasma etching apparatus 100 of the present invention does not directly generate the plasma in the chamber 110 but activates the etching gas in the remote plasma generator 160 outside the chamber 110, The uniformity of the etch gas in the chamber can be significantly increased since the gas is uniformly injected into the chamber 110 through the chamber 140.

제1가스공급관(150)에는 식각가스와 함께 챔버(110)의 내부로 Ar, He 등의 비반응성 가스를 공급하는 제2가스공급관(152)이 연결될 수 있는데, 실험에 따르면 이러한 비반응성 가스를 함께 공급하면 식각가스의 이온화율이 높아져 식각효과가 증대되는 것으로 나타났기 때문이다.The first gas supply pipe 150 may be connected to a second gas supply pipe 152 for supplying a non-reactive gas such as Ar or He into the chamber 110 together with the etch gas. This is because the ionization rate of the etching gas is increased and the etching effect is increased.

또한 본 발명의 실시예에서는 NO, N2O, N2, O2 등의 식각유도가스를 챔버(110)의 내부로 공급하기 위한 가스분사부(180)가 가스분배판(140)과는 별도로 구비되는 점에 특징이 있다.In the embodiment of the present invention, the gas spraying unit 180 for supplying the etching induction gas such as NO, N 2 O, N 2 , O 2, etc. into the chamber 110 is provided separately from the gas distribution plate 140 It is characterized by being equipped.

이러한 가스분사부(180)는 챔버(110)의 측벽에 대칭적으로 설치되는 다수의 인젝터일 수도 있고, 다수의 분사구를 가지는 가스링일 수도 있다. 또한 챔버(110)의 측벽이 아닌 챔버리드(120)의 주변부에 설치될 수도 있다.The gas injection unit 180 may be a plurality of injectors symmetrically installed on the side wall of the chamber 110, or may be a gas ring having a plurality of injection ports. And may be installed at the periphery of the chamber lid 120 rather than the side wall of the chamber 110.

가스분사부(180)에는 식각유도가스를 공급하는 제3가스공급관(182)이 연결된다.A third gas supply pipe 182 for supplying an etching induction gas is connected to the gas injection unit 180.

이하에서는 도 3의 순서도 및 도 2를 참조하여 본 발명의 실시예에 따라 기판을 식각하는 과정을 설명한다.Hereinafter, a process of etching a substrate according to an embodiment of the present invention will be described with reference to the flow chart of FIG. 3 and FIG.

먼저 챔버(110)의 내부로 기판(s)을 반입하여 기판안치대(130)의 상부에 올려놓은 다음 공정분위기를 조성한다. 이때 챔버(110)의 내부압력은 100mTorr 내지 5 Torr의 범위로 하고, 챔버(110)의 내부온도는 상온에서 500℃이하로 유지시키는 것이 바람직하다.First, the substrate (s) is carried into the chamber (110) and placed on the upper side of the substrate bench (130) to form a process atmosphere. At this time, it is preferable that the internal pressure of the chamber 110 is in the range of 100 mTorr to 5 Torr, and the internal temperature of the chamber 110 is maintained at the room temperature of 500 ° C or less.

이때 기판(s)을 1매씩 반입하여 처리할 수도 있고, 다수의 기판이 안치된 대형 트레이를 챔버(110)의 내부로 반입하여 상기 다수의 기판을 한꺼번에 처리할 수도 있다. (ST11)At this time, the substrates (s) may be carried in one by one and processed, or a large tray on which a plurality of substrates are placed may be transferred into the chamber 110 to process the plurality of substrates at once. (ST11)

이어서 가스분사부(180)를 통해 NO, N2O, N2, O2 등의 식각유도가스를 기판(s)의 상부에 균일하게 분사한다. (ST12)Then, an etching induction gas such as NO, N 2 O, N 2 , O 2 or the like is uniformly injected onto the upper portion of the substrate s through the gas injecting unit 180. (ST12)

이어서 원격플라즈마 발생장치(160)에서 NF3, F2, SF6, Cl2, CHF3 등의 식각가스를 활성화시켜 챔버(110)의 내부로 공급한다. 이때 챔버(110)의 내부로 식각가스만을 공급할 수도 있고 Ar이나 He 등의 비반응성 가스를 함께 공급할 수도 있다.Subsequently, an etch gas such as NF 3 , F 2 , SF 6 , Cl 2 , CHF 3 and the like is activated in the remote plasma generator 160 and supplied to the inside of the chamber 110. At this time, only etching gas may be supplied to the interior of the chamber 110, or non-reactive gases such as Ar and He may be supplied together.

식각가스는 기판(s)을 식각하여 표면에 미세한 요철을 형성하며, 먼저 분사된 식각유도가스는 식각속도를 향상시키고 플라즈마의 균일도를 높이는 역할을 한다. 즉, 대면적 기판(s)의 전면이나 대면적 트레이에 안치된 모든 기판에 걸쳐 균일한 표면조도를 얻을 수 있도록 한다.The etch gas etches the substrate (s) to form fine irregularities on the surface. The etchant gas injected first enhances the etch rate and improves the uniformity of the plasma. That is, uniform surface roughness can be obtained over the entire surface of the large-area substrate (s) or all the substrates placed in the large-area tray.

이때 식각가스와 식각유도가스의 비율은 10:1 ~ 2:1의 범위인 것이 바람직하다. (ST13, ST14)At this time, the ratio of the etching gas to the etching induction gas is preferably in the range of 10: 1 to 2: 1. (ST13, ST14)

도 4 및 도 5는 식각 전후의 기판표면의 요철구조를 나타낸 모식도로서, 공정 전에는 도 4에 도시된 바와 같이 기판표면의 요철이 매우 불규칙한 패턴을 가지지만 본 발명의 실시예를 적용하면 도 5에 도시된 바와 같이 피라미드 형상의 균일한 패턴을 얻을 수 있다.4 and 5 are schematic diagrams showing the concavo-convex structure of the substrate surface before and after the etching. As shown in FIG. 4, the concavo-convex pattern of the substrate surface has a very irregular pattern before the process. However, A uniform pyramidal pattern can be obtained as shown in FIG.

이와 같이 식각유도가스를 분사하는 공정(ST12)과 식각가스를 공급하는 공정(ST13)은 각각 1회에 그칠 수도 있지만, 식각유도가스를 분사하는 공정(ST12)과 식각가스를 공급하는 공정(ST13)을 1사이클로 하여 이를 다수 회 반복할 수도 있다.The step ST12 for spraying the etching induction gas and the step ST13 for supplying the etching gas may be performed only once, but the step ST12 for spraying the etching induction gas and the step ST13 ) May be set as one cycle and may be repeated many times.

한편 이상에서는 외부의 원격플라즈마 발생장치(160)에서 식각가스를 활성화시켜 챔버(110)의 내부로 공급하는 방법을 설명하였으나, 도 6에 도시된 바와 같이 기판안치대(130)에 제2의 RF전원(190)을 연결하여 챔버(110)의 내부에서 플라즈마를 발생시키는 것도 가능하다.Although the method of activating the etch gas in the external remote plasma generator 160 and supplying the etch gas to the interior of the chamber 110 has been described above, It is also possible to generate plasma within the chamber 110 by connecting the power source 190.

이를 통해 원격플라즈마 발생장치(160)에서 미활성화된 식각가스를 챔버(110)의 내부에서 활성화시킬 수도 있기 때문에 식각가스의 활성화율을 높여 식각 효율을 향상시킬 수 있다.Since the etchant gas activated in the remote plasma generator 160 can be activated inside the chamber 110, the etch efficiency can be improved by increasing the activation rate of the etch gas.

이때 제2의 RF전원(190)은 도시된 바와 같이 기판안치대(130)에 연결될 수도 있으나, 챔버리드(120)에 연결될 수도 있다. 또한 기판안치대(130) 및 챔버리드(120)에 각각 다른 RF전원을 연결할 수도 있다.At this time, the second RF power source 190 may be connected to the substrate stand 130 as shown, but may also be connected to the chamber lead 120. Also, different RF power sources may be connected to the substrate holder 130 and the chamber lid 120, respectively.

도 1은 일반적인 RIE장치의 개략 단면도1 is a schematic cross-sectional view of a general RIE apparatus

도 2는 본 발명의 실시예에 따른 기판식각장치의 개략 단면도2 is a schematic cross-sectional view of a substrate etching apparatus according to an embodiment of the present invention

도 3은 본 발명의 실시예에 따른 기판식각방법을 나타낸 순서도3 is a flowchart showing a substrate etching method according to an embodiment of the present invention

도 4 및 도 5는 각각 식각 이전과 식각 이후의 기판의 표면형상을 나타낸 모식도FIGS. 4 and 5 are schematic views showing the surface shape of the substrate before etching and after etching, respectively. FIG.

도 6은 본 발명의 다른 실시예에 따른 기판식각장치의 개략 단면도6 is a schematic cross-sectional view of a substrate etching apparatus according to another embodiment of the present invention

*도면의 주요부분에 대한 부호의 설명* Description of the Related Art [0002]

100: 기판식각장치 110: 챔버100: substrate etching apparatus 110: chamber

120: 챔버리드 130: 기판안치대120: chamber lead 130: substrate holder

140: 가스분배판 150: 제1가스공급관140: gas distribution plate 150: first gas supply pipe

152: 제2가스공급관 160: 원격플라즈마발생장치152: second gas supply pipe 160: remote plasma generating device

170: RF전원 180: 가스분사부170: RF power supply 180:

182: 제3가스공급관 190: 제2 RF전원182: third gas supply pipe 190: second RF power source

Claims (14)

챔버의 내부에 기판을 안치하는 제1단계;A first step of placing a substrate inside the chamber; 상기 챔버의 내부로 N 또는 O 중에서 적어도 하나의 원소를 포함하는 물질인 식각유도가스를 가스분사부를 통해 공급하는 제2단계;A second step of supplying an etch-inducing gas, which is a material containing at least one of N and O, into the chamber through a gas injection unit; 상기 제2단계 이후에 진행되며,상기 챔버의 내부로 NF3, F2, SF6, Cl2 또는 CHF3 중 어느 하나인 식각가스의 활성종을 가스공급관을 통해 공급하여 상기 기판을 식각하는 제3단계;The method according to claim 1, further comprising: supplying an active species of an etching gas, which is one of NF 3 , F 2 , SF 6 , Cl 2, or CHF 3 , to the interior of the chamber through a gas supply pipe, Step 3; 를 포함하는 기판 식각 방법≪ / RTI > 삭제delete 제1항에 있어서,The method according to claim 1, 상기 식각유도가스는 NO, N2O, N2 또는 O2인 것을 특징으로 하는 기판 식각 방법The etching gas is induced etching the substrate wherein the NO, N 2 O, an N 2 or O 2 삭제delete 제1항에 있어서,The method according to claim 1, 상기 식각가스와 상기 식각유도가스의 비율은 10:1 ~ 2:1의 범위인 것을 특징으로 하는 기판 식각 방법Wherein a ratio of the etching gas to the etching inducing gas is in a range of 10: 1 to 2: 1. 삭제delete 삭제delete 삭제delete 제1항에 있어서,The method according to claim 1, 상기 제3단계의 이후에, 상기 제2단계 및 상기 제3단계를 1사이클로 하는 공정을 1회 이상 반복하는 것을 특징으로 하는 기판 식각 방법Wherein after the third step, the step of performing the second step and the third step in one cycle is repeated one or more times. 삭제delete 삭제delete 삭제delete 삭제delete 삭제delete
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