KR101333883B1 - 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 - Google Patents
다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 Download PDFInfo
- Publication number
- KR101333883B1 KR101333883B1 KR1020110039337A KR20110039337A KR101333883B1 KR 101333883 B1 KR101333883 B1 KR 101333883B1 KR 1020110039337 A KR1020110039337 A KR 1020110039337A KR 20110039337 A KR20110039337 A KR 20110039337A KR 101333883 B1 KR101333883 B1 KR 101333883B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- light shielding
- gradation photomask
- photomask
- pattern
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-103560 | 2010-04-28 | ||
JP2010103560A JP5400698B2 (ja) | 2010-04-28 | 2010-04-28 | 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110120234A KR20110120234A (ko) | 2011-11-03 |
KR101333883B1 true KR101333883B1 (ko) | 2013-12-26 |
Family
ID=45321956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110039337A KR101333883B1 (ko) | 2010-04-28 | 2011-04-27 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5400698B2 (ja) |
KR (1) | KR101333883B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6093117B2 (ja) * | 2012-06-01 | 2017-03-08 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法及びパターンの転写方法 |
JP5686216B1 (ja) | 2013-08-20 | 2015-03-18 | 大日本印刷株式会社 | マスクブランクス、位相シフトマスク及びその製造方法 |
JP6514143B2 (ja) * | 2016-05-18 | 2019-05-15 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
KR100555447B1 (ko) * | 1998-02-17 | 2006-04-21 | 삼성전자주식회사 | 하프톤 위상반전 마스크 및 그 제조방법 |
KR100634387B1 (ko) * | 2004-07-22 | 2006-10-16 | 삼성전자주식회사 | 위상 쉬프트 마스크의 수리 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003133205A (ja) * | 2001-10-24 | 2003-05-09 | Oki Electric Ind Co Ltd | 反射型マスク、反射型マスク製造方法及び反射型マスク洗浄方法 |
JP3939167B2 (ja) * | 2002-02-28 | 2007-07-04 | Hoya株式会社 | 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク |
JP4026000B2 (ja) * | 2003-01-22 | 2007-12-26 | 信越化学工業株式会社 | フォトマスクブランクの製造方法、反りの低減方法及び膜の耐薬品性の向上方法、並びにフォトマスク |
JP4393290B2 (ja) * | 2003-06-30 | 2010-01-06 | Hoya株式会社 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
JP4535240B2 (ja) * | 2004-03-31 | 2010-09-01 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法 |
JP5080198B2 (ja) * | 2007-10-12 | 2012-11-21 | アルバック成膜株式会社 | グレートーンマスク |
JP5336226B2 (ja) * | 2008-02-26 | 2013-11-06 | Hoya株式会社 | 多階調フォトマスクの製造方法 |
JP2009237419A (ja) * | 2008-03-28 | 2009-10-15 | Hoya Corp | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 |
JP5239762B2 (ja) * | 2008-11-13 | 2013-07-17 | 大日本印刷株式会社 | 反射型マスク、および、反射型マスク製造方法 |
JP5240396B2 (ja) * | 2012-11-16 | 2013-07-17 | 大日本印刷株式会社 | 反射型マスク、および、反射型マスク製造方法 |
-
2010
- 2010-04-28 JP JP2010103560A patent/JP5400698B2/ja active Active
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2011
- 2011-04-27 KR KR1020110039337A patent/KR101333883B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100555447B1 (ko) * | 1998-02-17 | 2006-04-21 | 삼성전자주식회사 | 하프톤 위상반전 마스크 및 그 제조방법 |
JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
KR100634387B1 (ko) * | 2004-07-22 | 2006-10-16 | 삼성전자주식회사 | 위상 쉬프트 마스크의 수리 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP5400698B2 (ja) | 2014-01-29 |
JP2011232605A (ja) | 2011-11-17 |
KR20110120234A (ko) | 2011-11-03 |
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