KR101333883B1 - 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 - Google Patents

다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 Download PDF

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KR101333883B1
KR101333883B1 KR1020110039337A KR20110039337A KR101333883B1 KR 101333883 B1 KR101333883 B1 KR 101333883B1 KR 1020110039337 A KR1020110039337 A KR 1020110039337A KR 20110039337 A KR20110039337 A KR 20110039337A KR 101333883 B1 KR101333883 B1 KR 101333883B1
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KR
South Korea
Prior art keywords
film
light shielding
gradation photomask
photomask
pattern
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KR1020110039337A
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English (en)
Korean (ko)
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KR20110120234A (ko
Inventor
료우이찌 야나이
노보루 야마구찌
Original Assignee
호야 가부시키가이샤
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Publication of KR20110120234A publication Critical patent/KR20110120234A/ko
Application granted granted Critical
Publication of KR101333883B1 publication Critical patent/KR101333883B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020110039337A 2010-04-28 2011-04-27 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법 KR101333883B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-103560 2010-04-28
JP2010103560A JP5400698B2 (ja) 2010-04-28 2010-04-28 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法

Publications (2)

Publication Number Publication Date
KR20110120234A KR20110120234A (ko) 2011-11-03
KR101333883B1 true KR101333883B1 (ko) 2013-12-26

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KR1020110039337A KR101333883B1 (ko) 2010-04-28 2011-04-27 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 패턴 전사 방법 및 다계조 포토마스크의 사용 방법

Country Status (2)

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JP (1) JP5400698B2 (ja)
KR (1) KR101333883B1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP5686216B1 (ja) 2013-08-20 2015-03-18 大日本印刷株式会社 マスクブランクス、位相シフトマスク及びその製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
KR100555447B1 (ko) * 1998-02-17 2006-04-21 삼성전자주식회사 하프톤 위상반전 마스크 및 그 제조방법
KR100634387B1 (ko) * 2004-07-22 2006-10-16 삼성전자주식회사 위상 쉬프트 마스크의 수리 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133205A (ja) * 2001-10-24 2003-05-09 Oki Electric Ind Co Ltd 反射型マスク、反射型マスク製造方法及び反射型マスク洗浄方法
JP3939167B2 (ja) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
JP4026000B2 (ja) * 2003-01-22 2007-12-26 信越化学工業株式会社 フォトマスクブランクの製造方法、反りの低減方法及び膜の耐薬品性の向上方法、並びにフォトマスク
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP4535240B2 (ja) * 2004-03-31 2010-09-01 凸版印刷株式会社 ハーフトーン型位相シフトマスク用ブランク、ハーフトーン型位相シフトマスク及びパターン転写方法
JP5080198B2 (ja) * 2007-10-12 2012-11-21 アルバック成膜株式会社 グレートーンマスク
JP5336226B2 (ja) * 2008-02-26 2013-11-06 Ｈｏｙａ株式会社 多階調フォトマスクの製造方法
JP2009237419A (ja) * 2008-03-28 2009-10-15 Hoya Corp 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP5239762B2 (ja) * 2008-11-13 2013-07-17 大日本印刷株式会社 反射型マスク、および、反射型マスク製造方法
JP5240396B2 (ja) * 2012-11-16 2013-07-17 大日本印刷株式会社 反射型マスク、および、反射型マスク製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100555447B1 (ko) * 1998-02-17 2006-04-21 삼성전자주식회사 하프톤 위상반전 마스크 및 그 제조방법
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
KR100634387B1 (ko) * 2004-07-22 2006-10-16 삼성전자주식회사 위상 쉬프트 마스크의 수리 방법

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JP5400698B2 (ja) 2014-01-29
JP2011232605A (ja) 2011-11-17
KR20110120234A (ko) 2011-11-03

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