KR101264944B1

KR101264944B1 - Method of nano imprint lithography

Info

Publication number: KR101264944B1
Application number: KR1020050127583A
Authority: KR
Inventors: 박종성
Original assignee: 매그나칩 반도체 유한회사
Priority date: 2005-12-22
Filing date: 2005-12-22
Publication date: 2013-05-20
Also published as: KR20070066428A

Abstract

The present invention relates to a nanoimprint lithography method, it is possible to accurately implement the desired pattern, there is an effect that can shorten the process time by simultaneously forming a pattern on the front surface of the wafer.

Nanoimprint lithography method according to the present invention for this purpose comprises the steps of providing a template on which a predetermined pattern is formed; Forming a resist on the entire surface of the template to fill the spaces between the patterns; Pressing a wafer on the resist to form a resist pattern; Curing the resist pattern with ultraviolet light; And separating the wafer including the resist pattern from the template.

Nano imprint, lithography, templates

Description

Method of nano imprint lithography

1A and 1C are process flowcharts illustrating a method of fabricating a pattern by the nanoimprint lithography method according to the prior art.

2A-2C are process flow diagrams illustrating a method of fabricating a pattern by the nanoimprint lithography method in accordance with an embodiment of the present invention.

Description of the Related Art

100: wafer 110: resist

110a: resist pattern 140: vacuum chuck

150: resist spray nozzle 200: template

300: UV

The present invention relates to a nanoimprint lithography method, and more particularly to a nanoimprint lithography method that can accurately implement the desired pattern, and can shorten the process time by simultaneously forming a pattern on the front surface of the wafer.

In recent years, transistors have been invented and decades of remarkable advances have been made in electronic and electrical technologies to accommodate the storage of more capacity, faster information processing and transmission, and the construction of simpler information networks to keep pace with the 21st century. Is developing rapidly.

In particular, under the condition of the finiteness of a given information transmission rate, one way to meet these requirements is to make the components as small as possible and to give new functions through structure / manipulation / control at the atomic / molecular level. It is proposed.

Thus, microfabrication, which is capable of fabricating devices at this level, occupies an important place in modern science and technology.

One of the most widely used microstructure fabrication techniques so far is photolithography, laser direct transfer, and the like.

In recent years, the degree of integration of semiconductor devices has been increasing. Accordingly, studies on how to form ultrafine patterns have been actively conducted.

Expectations for such ultrafine technologies include excimer laser lithography, extreme ultraviolet lithography, electron beam projection lithography, and X-ray lithography.

However, as ultra miniaturization proceeds, the initial investment cost of the device is exponentially increased due to the expensive equipment such as exposure equipment, and the price of the mask having the same resolution as the wavelength of light used is soaring. There is a problem that the economic efficiency is poor.

A technique that has recently attracted attention to solve this problem is a nano imprint lithography method.

The nanoimprint lithography method is a method proposed by Professor Stephen Chou of Princeton University in the United States to prepare a nano-sized structure required on the surface of a material with a relatively high strength and to paint it on another material. It is a method of patterning by taking pictures.

1A and 1C are process flow diagrams illustrating a method of fabricating a pattern by the nanoimprint lithography method according to the prior art.

Referring to FIG. 1A, after coating or dropping the resist 11 on the wafer 10, a template 20 having a pre-fabricated nanopattern is provided on the resist 11.

Referring to FIG. 1B, the template 20 is pressed toward the resist 11 so that the resist 11 is filled with the space between the patterns of the template 20. As described above, the ultraviolet rays 30 are irradiated during imprinting to cure the resist 11 to form a desired resist pattern 11a.

Referring to FIG. 1C, the template 20 is separated from the resist pattern 11a.

However, in the nanoimprint lithography method according to the related art, a case in which the resist 11 is not completely filled with the space between the patterns of the template 20 occurs, so that a desired pattern cannot be formed properly. In addition, a difference occurs in the amount of the resist 11 pushed by the pressing of the template 20 between the dense pattern and the isolated pattern, thereby causing a problem such as tilting of the horizontal level.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to provide a nanoimprint lithography method that can accurately implement a desired pattern, and can match the horizontal level of the pattern formed on the wafer. .

Nanoimprint lithography method according to the present invention for achieving the above object,

Providing a template on which a predetermined pattern is formed;

Forming a resist on the entire surface of the template to fill the spaces between the patterns;

Pressing a wafer on the resist to form a resist pattern;

Curing the resist pattern with ultraviolet light; And

Separating the wafer including the resist pattern from the template.

Herein, the template is made of a transparent material.

In addition, quartz is used as the permeable material.

The resist may be formed by spraying the entire surface of the template using a spray nozzle.

In addition, the resist is characterized in that the photocurable resist.

In addition, the wafer is characterized in that the height can be adjusted in the vertical direction by a vacuum chuck mounted on the upper surface thereof.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

2A-2C are process flow diagrams illustrating a method of fabricating a pattern by the nanoimprint lithography method according to an embodiment of the present invention.

Referring to FIG. 2A, a template 200 prepared in advance to have a desired predetermined pattern is provided. The template 200 is preferably made of a transmissive material such as quartz, so as to transmit ultraviolet rays, and the pattern formed on the template 200 includes a pattern of a nano scale.

Next, a resist 110 is formed on the entire surface of the template 200 to fill the space between the patterns formed on the template 200. The resist 110 is preferably a photocurable resist that is cured by a light source such as ultraviolet light, and may be formed by spraying the entire surface of the template 200 using a resist spray nozzle 150.

Next, the wafer 100 is provided on the template 200 on which the resist 100 is formed as described above. The vacuum chuck 140 is mounted on an upper surface of the wafer 100, and the height of the wafer 100 may be adjusted in the vertical direction by the vacuum chuck 140. That is, the vacuum chuck 140 adjusts the pressure of pressing the resist 110 by adjusting the height of the wafer 100. At this time, it is preferable that the vacuum chuck 140 holding the wafer 100 can be rotated clockwise and counterclockwise to facilitate movement of the wafer 100.

Referring to FIG. 2B, the vacuum chuck 140 mounted on the upper surface of the wafer 100 is lowered toward the lower template 200 so as to compress the wafer 100 onto the resist 110. The desired resist pattern 110a is obtained.

As described above, in the exemplary embodiment of the present invention, unlike the conventional nanoimprint lithography method, the positions of the template 200 and the wafer 100 are interchanged so that the resist 110 is used as a space between the patterns formed on the template 200. By making sure that it is completely filled, you can achieve the exact pattern you want.

In addition, if the above-described method, the difference in the sliding of the resist 110 does not occur between the dense pattern and the small pattern, so that the horizontal level of the resist pattern 110a formed on the wafer 100 can be exactly matched. Since the desired resist pattern 110a can be simultaneously produced on the entire surface of the 100, the process time can be shortened.

Subsequently, ultraviolet rays 300 are irradiated from the lower portion of the template 200 toward the template 200 to cure the resist pattern 110a.

Referring to FIG. 2C, the vacuum chuck 140 mounted on the upper surface of the wafer 100 is raised again to separate the wafer 100 including the resist pattern 110a from the template 200.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

As described above, according to the nanoimprint lithography method according to the present invention, a template having a predetermined pattern is placed below, the resist is completely filled in the space between the patterns of the template, and then the wafer is compressed on the upper portion. By doing so, the desired pattern can be accurately implemented.

In addition, since the sliding difference of the resist does not occur between the dense pattern and the small pattern, the horizontal level of the resist pattern formed on the wafer can be exactly matched, and the resist pattern can be simultaneously formed on the entire surface of the wafer. It is possible to reduce the process time.

Claims

Providing a template having a dense pattern and a small pattern formed thereon;

Forming a resist on the entire surface of the template to fill a space between the dense pattern and the small pattern;

Lowering the vacuum chuck mounted on the upper surface of the wafer in the direction of the template to compress the wafer onto the resist to form a resist pattern;

Irradiating ultraviolet rays from the lower portion of the template toward the template to cure the resist pattern; And

Lifting the vacuum chuck to separate the wafer including the resist pattern from the template,

The template is a nano imprint lithography method, characterized in that the use of quartz as a transparent material.

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The method of claim 1,

And the resist is formed by spraying the entire surface of the template using a spray nozzle.

The method of claim 1,

And the resist is a photocurable resist.

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