KR101193308B1 - Supporting plate attaching apparatus - Google Patents

Supporting plate attaching apparatus Download PDF

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KR101193308B1
KR101193308B1 KR1020050114163A KR20050114163A KR101193308B1 KR 101193308 B1 KR101193308 B1 KR 101193308B1 KR 1020050114163 A KR1020050114163 A KR 1020050114163A KR 20050114163 A KR20050114163 A KR 20050114163A KR 101193308 B1 KR101193308 B1 KR 101193308B1
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support plate
plate
chamber
semiconductor wafer
shutter
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KR1020050114163A
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Korean (ko)
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KR20060059825A (en
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다모쯔 사사키
요시히로 이나오
아쯔시 미야나리
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이. 티. 시스템 엔지니어링 가부시키가이샤
도쿄 오카 고교 가부시키가이샤
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Publication of KR20060059825A publication Critical patent/KR20060059825A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

반도체 웨이퍼 등의 기판과 서포트플레이트 사이에 끼인 가스를 용이하게 제거하면서 압착할 수 있는 첩부장치를 제공한다.Provided is a sticking device capable of pressing while easily removing a gas trapped between a substrate such as a semiconductor wafer and a support plate.

감압 챔버(50)은, 배관(51)을 매개로 하여 진공흡인장치로 이어지고, 또한 한 측면에는 반입?반출용 개구(52)가 형성되어, 이 개구(52)를 셔터(53)으로 개폐한다. 이 셔터(53)은 실린더 유닛(54)로 승강 이동되어, 상승한 위치에서 측방으로부터 푸셔(55)로 밀어 누름으로써, 셔터(53)의 내측면에 설치한 실(seal)이 개구(52)의 주위에 빽빽하게 맞닿아, 챔버(50) 내를 기밀하게 유지한다. 또한 푸셔(55)를 후퇴시켜 셔터(53)을 하강시킴으로써, 개구(52)가 열림으로 되고, 이 상태에서 반송장치를 사용하여 웨이퍼(W)와 서포트플레이트(2)와의 적층체를 넣고 꺼낸다. 그리고, 챔버(50) 내에는 상기 적층체를 압착하는 유지대(56)과 누름판(57)이 배치되어 있다. The decompression chamber 50 is connected to the vacuum suction device via the pipe 51, and an opening 52 for carrying in / out is formed on one side thereof, and the opening 52 is opened and closed by the shutter 53. . This shutter 53 is moved up and down by the cylinder unit 54, and it pushes to the pusher 55 from the side at the raised position, and the seal provided in the inner surface of the shutter 53 is the opening of the opening 52. As shown in FIG. In close contact with the surroundings, the chamber 50 is kept airtight. In addition, the opening 52 is opened by retracting the pusher 55 and lowering the shutter 53. In this state, the stacking device of the wafer W and the support plate 2 is put in and taken out using the conveying apparatus. In the chamber 50, a holding table 56 and a pressing plate 57 for pressing the laminate are arranged.

반도체 웨이퍼, 서포트플레이트, 다이싱 테이프, 첩부장치, 챔버 Semiconductor Wafer, Support Plate, Dicing Tape, Attaching Device, Chamber

Description

서포트플레이트의 첩부장치{Supporting plate attaching apparatus}Supporting plate attaching apparatus {Supporting plate attaching apparatus}

도 1은 본 발명의 반도체 웨이퍼의 첩부장치를 사용하는 반도체 웨이퍼의 박판화공정을 설명한 도면이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a figure explaining the thinning process of the semiconductor wafer using the sticking apparatus of the semiconductor wafer of this invention.

도 2는 서포트플레이트의 사시도(斜視圖)이다.2 is a perspective view of the support plate.

도 3은 기판(基板)과 접착제와 서포트플레이트의 관계를 나타내는 측면도이다.3 is a side view illustrating a relationship between a substrate, an adhesive, and a support plate.

도 4는 서포트플레이트의 위쪽으로부터 용제를 공급하고 있는 상태를 나타내는 사시도이다.It is a perspective view which shows the state supplying a solvent from the upper side of a support plate.

도 5는 본 발명의 반도체 웨이퍼의 첩부장치의 전체 단면도이다.5 is an overall sectional view of the pasting device for semiconductor wafers of the present invention.

부호의 설명Explanation of symbols

1…접착제층, 2…서포트플레이트(support plate), 3…관통공(貫通孔), 5…첩부(貼付)장치, 10…그라인더(grinder), 11…다이싱 테이프(dicing tape), 12…프레임, 13…다이싱장치, 14…암(arm), 15…지그(jig), 50…감압 챔버, 51…감압용 배관, 52…개구(開口), 53…셔터, 54…실린더 유닛, 55…푸셔(pusher), 56…유지대(保持台), 57…누름판(押壓板), 58…관통공, 59…승강 핀, 60…실린더 유닛, 61…플레이트, 62…히터, 63…백 플레이트, 64…축, 65…플랜지(flange), 66…주름상자, 67…프레임, 68…서보모터(servo motor), 69…스크류 나사, 70…승강체(昇降體), 71… 너트부, 72…볼 조인트(ball joint), 73…센서, W…반도체 웨이퍼.One… Adhesive layer; Support plate, 3... Through hole, 5... Sticking device, 10.. Grinder, 11... Dicing tape, 12.. Frame, 13... Dicing apparatus, 14... Arm, 15... Jig, 50... Pressure reducing chamber, 51... Pressure reducing pipe, 52.. Opening, 53.. Shutter, 54... Cylinder unit, 55... Pusher, 56... Oil base, 57... Pressing plate, 58... Through hole, 59... Lifting pin, 60... Cylinder unit, 61.. Plate, 62... Heater, 63... Back plate, 64... Axis 65. Flange, 66.. Corrugated box, 67... Frame, 68... Servo motor, 69... Screw screw, 70... Lifting body 71. Nut part 72... Ball joint, 73... Sensor, W… Semiconductor wafer.

본 발명은 반도체 웨이퍼 등의 기판을 박판화(薄板化)할 때에 백업을 위해 기판에 서포트플레이트를 첩부하는 장치에 관한 것이다.TECHNICAL FIELD This invention relates to the apparatus which affixes a support plate to a board | substrate for a backup at the time of thinning board | substrates, such as a semiconductor wafer.

IC 카드나 휴대전화의 박형화, 소형화, 경량화가 요구되고 있어, 이 요구를 충족시키기 위해서는 삽입되는 반도체 칩에 대해서도 두께가 얇은 반도체 칩으로 하지 않으면 안 된다. 이 때문에 반도체 칩의 토대가 되는 웨이퍼의 두께는 현재 상태에서는 125 ㎛~150 ㎛이지만, 차세대 칩용으로는 25 ㎛~50 ㎛로 하지 않으면 안 된다고 말하여지고 있다.The thinning, miniaturization, and lightening of IC cards and mobile telephones are demanded. In order to meet this demand, semiconductor chips to be inserted must also be made into thin semiconductor chips. For this reason, the thickness of the wafer on which the semiconductor chip is based is 125 µm to 150 µm in the current state, but it is said that the thickness must be 25 µm to 50 µm for the next generation chip.

반도체 웨이퍼를 그라인더 등에 의해 박판화하는 공정에서는, 반도체 웨이퍼의 회로형성면측을 테이프나 판재(板材)로 서포트할 필요가 있다. 특허문헌 1에는, 반도체 웨이퍼에 서포트플레이트를 첩부하는 장치가 개시되어 있다.In the process of thinning a semiconductor wafer with a grinder, etc., it is necessary to support the circuit formation surface side of a semiconductor wafer with a tape or a board | plate material. Patent Literature 1 discloses an apparatus for attaching a support plate to a semiconductor wafer.

특허문헌 1에 개시되는 장치는, 상하 한쌍의 핫플레이트를 배치하는 동시에, 이들 핫플레이트의 바깥쪽에 상하 한쌍의 진공펌프를 설치하고, 상하 핫플레이트 사이에서 반도체 웨이퍼와 핫플레이트와의 적층체를 압착(壓着)하는 동안, 감압분위기에서 행하도록 하고 있다. 특히, 특허문헌 1에서는 위쪽의 핫플레이트를 승강 이동시키는 수단으로서 유압식(油壓式) 프레스기를 사용하지 않고, 댐퍼(damper)로서도 기능하는 에어 플런져(air plunger)를 사용함으로써, 핫플레이트로부터의 열 로 적층체가 팽창되었을 때에 발생하는 역압력(逆壓力)으로 반도체 웨이퍼가 파손되는 것을 방지하고 있다.The device disclosed in Patent Literature 1 arranges a pair of upper and lower hot plates, and installs a pair of upper and lower vacuum pumps on the outside of these hot plates, and compresses the laminate of the semiconductor wafer and the hot plate between the upper and lower hot plates. During the heating, it is carried out in a reduced pressure atmosphere. In particular, Patent Literature 1 uses an air plunger that also functions as a damper, without using a hydraulic press as a means for lifting and lowering the upper hot plate. The semiconductor wafer is prevented from being damaged by the reverse pressure generated when the laminate is expanded by heat.

[특허문헌 1] 일본국 특허공개 제2002-192394호 공보 단락(0012), (0014), (0019)[Patent Document 1] Japanese Unexamined Patent Publication No. 2002-192394 Paragraphs (0012), (0014) and (0019)

반도체 웨이퍼와 서포트플레이트를 겹치는 경우, 평면적으로 균등한 압력으로 서포트플레이트를 반도체 웨이퍼에 밀어붙일 필요가 있다. 기울어진 힘으로 밀어붙이면 사이에 개재(介在)하는 접착제의 두께가 부분적으로 변화되어, 적층체 전체의 두께가 불균등해진다.In the case where the semiconductor wafer and the support plate overlap, it is necessary to push the support plate onto the semiconductor wafer at a uniform pressure in a plane. When pushed by the inclined force, the thickness of the adhesive interposed therebetween is partially changed, and the thickness of the whole laminate becomes uneven.

그리고, 두께가 균등하지 않은 적층체를 연삭(硏削)하면, 연삭된 반도체 웨이퍼의 두께가 불균일해진다.And when grinding the laminated body which is not equal in thickness, the thickness of the ground semiconductor wafer will become nonuniform.

상기를 해소하기 위해서는, 유지판(保持板)과 누름판이 항상 평행할 필요가 있다. 그러나, 특허문헌 1에 있어서는 유지판 및 누름판 모두 수평한 것을 전제로 하여, 이들 유지판 또는 누름판이 어떠한 원인으로 평행하지 않게 되면, 그것을 간단히 조정할 수 없다.In order to eliminate the above, the holding plate and the pressing plate must always be parallel. However, in Patent Literature 1, it is assumed that both the holding plate and the pressing plate are horizontal, and if these holding plates or the pressing plate are not parallel for some reason, it cannot be simply adjusted.

상기 과제를 해결하기 위해 본 발명의 첩부장치는, 진공원(眞空源)으로 이어지는 동시에 기판의 반입(搬入)?반출구(搬出口)를 기밀(氣密)하게 폐색(閉塞) 가능한 셔터를 구비한 챔버(chamber)를 갖고, 이 챔버 내에는, 기판과 서포트플레이트와의 적층체를 올려두는 유지대와, 이 유지대에 대해 상대적으로 승강 이동 가능한 누름판이 배치되며, 이 누름판은 승강 이동 가능한 축에 설치되고, 이 축은 볼 조인트 등의 조인트를 매개로 하여 각도 조정 가능하게 승강체(昇降體)에 지지된 구성으로 하였다. 또한, 누름판 및 유지대의 재질은 알루미나나 탄화규소 등의 세라믹스가 바람직하다. MEANS TO SOLVE THE PROBLEM In order to solve the said subject, the sticking apparatus of this invention is provided with the shutter which can be closed to a vacuum source and to close and close a board | substrate carrying in and out of a board | substrate. The chamber is provided with a holding chamber which has a chamber, on which a stack of the substrate and the support plate is placed, and a pressing plate which is capable of lifting and lowering relative to the holding plate. This axis | shaft was set to the structure supported by the lifting body so that angle adjustment was possible through joints, such as a ball joint. In addition, as for the material of a press plate and a support stand, ceramics, such as an alumina and a silicon carbide, are preferable.

상기 구성으로 함으로써, 기판과 서포트플레이트를 첩합(貼合)하여 적층체로 할 때마다, 또는 소정 횟수마다 누름판의 각도를 조정하여, 항상 최적의 상태로 첩합할 수 있다.By setting it as the above structure, the angle of the press plate is adjusted every time the substrate and the support plate are bonded to form a laminate, or every predetermined number of times, and the bonding can be always performed in an optimum state.

상기 누름판의 승강 이동은 서보모터를 사용하여 행함으로써, 누름판으로부터 서포트플레이트에 가해지는 토크(toque)를 제어할 수 있다. 또한, 위치 센서를 사용함으로써 누름판을 위치 제어함으로써 서포트플레이트에 가해지는 힘을 제어하는 것도 가능하다.The lifting and lowering movement of the pressing plate can be performed by using a servomotor to control the torque applied to the support plate from the pressing plate. It is also possible to control the force applied to the support plate by positioning the pressing plate by using the position sensor.

또한, 누름판 및 유지대의 적어도 한쪽에 히터를 설치함으로써, 일단 경화된 접착제를 부드럽게 하여 기판과 서포트플레이트를 첩합시킬 수 있다.In addition, by providing a heater on at least one of the holding plate and the holding table, the adhesive once cured can be softened to bond the substrate and the support plate together.

이하에 본 발명의 실시형태를 첨부하는 도면을 토대로 설명한다. 도 1은 본 발명의 첩부장치를 사용한 반도체 웨이퍼의 박판화공정을 설명한 도면, 도 2는 서포트플레이트의 사시도, 도 3은 기판과 접착제와 서포트플레이트의 관계를 나타내는 측면도로, 맨처음 박판화공정의 전체를 설명한다.EMBODIMENT OF THE INVENTION Below, embodiment of this invention is described based on drawing attached. BRIEF DESCRIPTION OF THE DRAWINGS The figure explaining the thinning process of the semiconductor wafer using the sticking apparatus of this invention, FIG. 2 is a perspective view of a support plate, FIG. 3 is a side view which shows the relationship of a board | substrate, an adhesive agent, and a support plate, The first whole thinning process is shown. Explain.

먼저, 반도체 웨이퍼(W)의 회로(소자) 형성면(A면)에 접착제액을 도포한다. 도포에는 예를 들면 스피너(spinner)를 사용한다. 접착제액으로서는 예를 들면 노볼락 타입의 페놀 수지계 재료를 들 수 있지만, 이것에 한정되지 않는다. 또한 접착제의 두께는 수 ㎛~100 ㎛ 정도로 한다.First, adhesive liquid is apply | coated to the circuit (element) formation surface A surface of the semiconductor wafer W. As shown in FIG. For application, for example, a spinner is used. As an adhesive liquid, a novolak-type phenol resin type material is mentioned, for example, It is not limited to this. Moreover, the thickness of an adhesive agent is about several micrometers-about 100 micrometers.

이어서, 도 3에 나타내는 바와 같이, 상기의 접착제를 베이크하여 구워 굳혀 유동성을 없앤 접착제층(1)을 기판(W)의 표면에 형성한다. 가열에는 예를 들면 오븐을 사용한다. 접착제층(1)의 두께는 상기에 한정되지 않고, 반도체 웨이퍼(W)의 표면(A면)에 형성한 회로의 요철에 따라 결정한다. 또한, 1회의 도포로는 필요한 두께를 만들 수 없는 경우에는, 도포와 예비 건조를 복수회 반복해서 행한다. 이 경우, 최상층(最上層) 이외의 접착제층의 예비 건조는 접착제에 유동성을 남기지 않도록 건조의 정도를 강화한다. Next, as shown in FIG. 3, the said adhesive agent is baked, baked, and hardened and the adhesive bond layer 1 which removed the fluidity | liquidity is formed in the surface of the board | substrate W. Then, as shown in FIG. For example, an oven is used for heating. The thickness of the adhesive bond layer 1 is not limited to the above, It determines with the unevenness | corrugation of the circuit formed in the surface (A surface) of the semiconductor wafer W. As shown in FIG. In addition, when necessary thickness cannot be created by one application | coating, application | coating and predrying are repeated several times. In this case, predrying of the adhesive layer other than the uppermost layer enhances the degree of drying so as not to leave fluidity in the adhesive.

이상에 의해 소정 두께의 접착제층(1)이 형성된 반도체 웨이퍼(W)에, 본 발명의 첩부장치를 사용하여 서포트플레이트(2)를 첩부한다. 첩부장치의 상세는 후술한다. 서포트플레이트(2)는 도 2에 나타내는 바와 같이, 예를 들면 두께방향의 관통공(3)을 전역(全域)에 형성한 유리판(두께 1.0 ㎜, 외경(外徑) 201.0 ㎜)으로 한다.By the above, the support plate 2 is affixed on the semiconductor wafer W in which the adhesive bond layer 1 of predetermined thickness was formed using the sticking apparatus of this invention. The detail of a sticking apparatus is mentioned later. As shown in FIG. 2, the support plate 2 is made into the glass plate (thickness 1.0mm, outer diameter 201.0mm) which formed the through-hole 3 of the thickness direction across the whole, for example.

그 다음, 일체화된 반도체 웨이퍼(W)와 서포트플레이트(2)로 되는 적층체를 반전(反轉)하고, 반도체 웨이퍼(W)의 이면(裏面)(B면)을 그라인더(10)으로 연삭하여, 반도체 웨이퍼(W)를 박판화한다. 또한, 연삭에 있어서는 그라인더(10)과 반도체 웨이퍼(W) 사이에 생기는 마찰열을 억제하기 위해 물(연삭액)을 반도체 웨이퍼(W)의 이면에 공급하면서 행한다. 여기에서, 상기 접착제는 물에 불용(알코올에 가용)인 것을 선정하고 있기 때문에, 연삭 시에 반도체 웨이퍼(W)로부터 서포트플레이트(2)가 박리되는 경우가 없다.Subsequently, the laminated body which becomes the integrated semiconductor wafer W and the support plate 2 is reversed, and the back surface B surface of the semiconductor wafer W is ground by the grinder 10, The semiconductor wafer W is thinned. In grinding, in order to suppress frictional heat generated between the grinder 10 and the semiconductor wafer W, water (grinding liquid) is supplied to the back surface of the semiconductor wafer W. Here, since the adhesive is selected to be insoluble in water (soluble in alcohol), the support plate 2 does not peel off from the semiconductor wafer W during grinding.

상기 박판화된 반도체 웨이퍼(W)의 이면(B면)에 필요에 따라 회로 등을 형성 한 후, 해당 이면을 다이싱 테이프(11) 상에 고정한다. 이 다이싱 테이프(11)은 점착성을 갖는 동시에 프레임(12)에 유지되어 있다.After forming a circuit or the like on the back surface B surface of the thinned semiconductor wafer W, the back surface is fixed on the dicing tape 11. This dicing tape 11 has adhesiveness and is held by the frame 12.

그 다음, 서포트플레이트(2)의 위로부터 용제로서 알코올을 붓는다. 알코올은 서포트플레이트(2)의 관통공(3)을 매개로 하여 접착제층(1)에 도달하여 접착제층(1)을 용해한다. 이 경우, 프레임(12)를 도시하지 않는 스피너로 회전시킴으로써, 알코올을 단시간 중에 접착제층(1)의 전면에 고루 퍼지게 할 수 있다. 사용하는 알코올로서는 에탄올이나 메탄올 등의 분자량이 작은 것일수록 용해성이 높기 때문에 바람직하다. 또한 복수의 알코올을 혼합해도 된다. 또한 알코올 대신에 케톤 또는 알코올과 케톤의 혼합용액을 사용해도 된다.Then, alcohol is poured from the support plate 2 as a solvent. The alcohol reaches the adhesive layer 1 through the through hole 3 of the support plate 2 and dissolves the adhesive layer 1. In this case, by rotating the frame 12 with a spinner (not shown), the alcohol can be spread evenly over the entire surface of the adhesive layer 1 in a short time. As the alcohol to be used, the smaller the molecular weight such as ethanol or methanol, the higher the solubility is preferable. Moreover, you may mix several alcohol. Instead of alcohol, a ketone or a mixed solution of alcohol and ketone may be used.

알코올 등을 접착제층(1)에 공급하는 수단으로서는, 용제를 채운 조(槽)에 서포트플레이트(2)가 접착된 반도체 웨이퍼(W)를 침지(浸漬)해도 되고, 이 경우 초음파진동을 가하면 더욱 효과적이다.As a means for supplying alcohol or the like to the adhesive layer 1, the semiconductor wafer W on which the support plate 2 is adhered may be immersed in a tank filled with a solvent, and in this case, the ultrasonic vibration is further applied. effective.

이상과 같이 하여 접착제층(1)을 용해시켰으면, 도 4에 나타내는 바와 같이, 프레임(12)를 회전시켜 서포트플레이트(2) 상의 여분의 용제를 제거한 후, 암(14)의 앞쪽 끝에 설치한 지그(15)를 서포트플레이트(2)의 주변에 끼워 넣고, 암(14)를 비스듬히 위쪽으로 끌어당김으로써 서포트플레이트(2)를 주변부로부터 서서히 박리한다. When the adhesive bond layer 1 was melt | dissolved as mentioned above, as shown in FIG. 4, after removing the excess solvent on the support plate 2 by rotating the frame 12, it installed in the front end of the arm 14. The jig 15 is inserted around the support plate 2 and the support plate 2 is gradually peeled off from the periphery by pulling the arm 14 obliquely upward.

그리고, 서포트플레이트(2)를 떼어낸 후, 다이싱장치(13)에 의해 반도체 웨이퍼(W)를 칩 사이즈로 절단한다. 절단 후는, 다이싱 테이프(11)에 자외선을 조사하고, 다이싱 테이프(11)의 점착력을 저하시켜, 절단한 칩을 따로 따로 꺼낸다.After the support plate 2 is removed, the semiconductor wafer W is cut into chip sizes by the dicing apparatus 13. After cutting, the dicing tape 11 is irradiated with ultraviolet rays, the adhesive force of the dicing tape 11 is lowered, and the cut chips are taken out separately.

이어서, 첩부장치에 대해서 도 5를 토대로 설명한다. 첩부장치(5)는 감압 챔버(50)을 구비하고 있다. 이 감압 챔버(50)은 배관(51)을 매개로 하여 진공흡인장치로 이어지고, 또한 한 측면에는 반입?반출용 개구(52)가 형성되어, 이 개구(52)를 셔터(53)으로 개폐하도록 하고 있다.Next, the sticking apparatus is demonstrated based on FIG. The sticking apparatus 5 is equipped with the pressure reduction chamber 50. As shown in FIG. The decompression chamber 50 is connected to a vacuum suction device via a pipe 51, and an opening 52 for carrying in and taking out is formed on one side thereof so that the opening 52 can be opened and closed by a shutter 53. Doing.

셔터(53)은 실린더 유닛(54)로 승강 이동되어, 상승한 위치에서 측방(側方)으로부터 푸셔(55)로 밀어 누름으로써, 셔터(53)의 내측면에 설치한 실이 개구(52)의 주위에 빽빽하게 맞닿아, 챔버(50) 내를 기밀하게 유지한다. 또한 셔터(55)를 후퇴시켜 셔터(53)을 하강시킴으로써, 개구(52)가 열림으로 되고, 이 상태에서 반송장치를 사용하여 웨이퍼(W)와 서포트플레이트(2)와의 적층체를 넣고 꺼낸다. The shutter 53 is moved up and down by the cylinder unit 54, and is pushed to the pusher 55 from the side at the raised position, so that the thread provided on the inner side surface of the shutter 53 has the opening 52. In close contact with the surroundings, the chamber 50 is kept airtight. In addition, by retracting the shutter 55 and lowering the shutter 53, the opening 52 is opened, and in this state, a stack of the wafer W and the support plate 2 is put in and taken out using a transfer device.

상기 챔버(50) 내에는 상기 적층체를 압착하는 유지대(56)과 누름판(57)이 배치되어 있다. 유지대(56)은 탄화규소(SiC)로 되고, 누름판(57)은 알루미나(Al2O3)로 된다. 또한, 세라믹스 소결체(燒結體)로 누름판을 구성하고, 이 세라믹스 소결체에 배기관을 접속하는 구성도 생각할 수 있지만, 이 구성으로 하면 충분히 접착제 중의 가스가 빠지지 않을 우려가 있다.In the chamber 50, a holding table 56 and a pressing plate 57 for pressing the laminate are arranged. The holder 56 is made of silicon carbide (SiC), and the pressing plate 57 is made of alumina (Al 2 O 3 ). Moreover, although the structure which comprises a press plate with a ceramic sintered compact and connects an exhaust pipe to this ceramic sintered compact can also be considered, when it is set as this structure, there exists a possibility that the gas in an adhesive may not fully come out.

상기 유지대(56)에는 관통공(58)이 형성되고, 이 관통공(58)에 승강 핀(59)가 끼워져 통해(揷通) 있다. 이 승강 핀(59)는 챔버(50)의 아래쪽에 설치된 실린더 유닛(60)으로 승강 이동하는 플레이트(61)에 설치되어 있다.A through hole 58 is formed in the holding table 56, and a lifting pin 59 is fitted through the through hole 58. This lifting pin 59 is provided in the plate 61 which moves up and down to the cylinder unit 60 provided below the chamber 50.

또한, 상기 유지대(56)에는 히터(62)가 매설되고, 이 히터(62)에 의해 상기 적층체를 200℃ 정도까지 가열하여, 일단 경화된 접착제를 부드럽게 한다. 또한 히 터는 누름판(57)측에 설치해도 된다.In addition, a heater 62 is embedded in the holding table 56, and the heater 62 is heated to about 200 ° C. to soften the adhesive once cured. In addition, the heater may be provided on the pressing plate 57 side.

한편, 상기 누름판(57)은 백 플레이트(63)에 유지되고, 이 백 플레이트(63)은 챔버(50)을 관통하는 축(64)의 하단(下端)에 설치되어 있다. 이 축(64)의 중간부에는 플랜지(65)가 설치되고, 이 플랜지(65)와 챔버(50) 윗면 사이에 주름상자(66)이 설치되어, 챔버(50) 내의 기밀상태를 유지하고 있다.On the other hand, the pressing plate 57 is held in the back plate 63, and the back plate 63 is provided at the lower end of the shaft 64 passing through the chamber 50. The flange 65 is provided in the middle part of this shaft 64, and the corrugation box 66 is provided between this flange 65 and the upper surface of the chamber 50, and the airtight state in the chamber 50 is maintained. .

또한 상기 챔버(50)으로부터는 위쪽으로 프레임(67)이 늘어나, 이 프레임(67)에 서보모터(68)이 지지되고, 이 서보모터(68)에 의해 회전되는 스크류 나사(69)에 승강체(70)의 너트부(71)이 나사 결합되어, 이 승강체(70)에 볼 조인트(72)를 매개로 하여 상기 축(64)의 상단부(上端部)가 지지되어 있다. 더욱이, 축(64)의 측방에는 축(64)의 상하 위치를 검출하는 센서(73)을 배치하고 있다.In addition, the frame 67 extends upward from the chamber 50, and the servomotor 68 is supported by the frame 67, and the lifting body is lifted by the screw screw 69 rotated by the servomotor 68. The nut part 71 of the 70 is screwed together, and the upper end part of the said shaft 64 is supported by this lifting body 70 via the ball joint 72. Moreover, the sensor 73 which detects the up-down position of the shaft 64 is arrange | positioned beside the shaft 64. As shown in FIG.

이상에 있어서 반도체 웨이퍼(W)와 서포트플레이트(2)와의 적층체를 압착하기 위해서는, 먼저 누름판(57)의 평행도의 조정을 행한다. 평행도를 내기 위해서는, 볼 조인트(72)의 볼트를 느슨하게 하여 볼 조인트(72)를 프리상태로 한다. 그리고, 이 상태 그대로 누름판(57)을 자중(自重)으로 하강시켜, 누름판(57)의 아랫면을 유지대(56)의 윗면에 맞닿게 한다. 이 시점에서 유지대(56)과 누름판(57)은 평행해진다. 이어서, 볼트를 조여 볼 조인트(72)를 고정한 후, 누름판(57)을 상승시킨다.In order to crimp the laminated body of the semiconductor wafer W and the support plate 2 as mentioned above, the parallelism of the press plate 57 is adjusted first. In order to achieve parallelism, the bolt of the ball joint 72 is loosened and the ball joint 72 is made into a free state. In this state, the pressing plate 57 is lowered to its own weight so that the lower surface of the pressing plate 57 is brought into contact with the upper surface of the holding table 56. At this point, the holding table 56 and the pressing plate 57 are parallel to each other. Next, after fixing the ball joint 72 by tightening a bolt, the pressing plate 57 is raised.

평행도의 조정은 매회 행할 필요는 없고, 적당한 횟수마다 행한다. 또한, 상기에서는 적층체를 끼우지 않고 평행도의 조정을 행하였지만, 압착하는 적층체와 동일 두께의 판재를 유지대(56)과 누름판(57) 사이에 개재시켜서 평행도를 조정해 도 된다.The parallelism does not need to be adjusted every time, but rather every appropriate number of times. In addition, although the parallelism was adjusted without sandwiching a laminated body in the above, parallelism may be adjusted through the board | substrate 56 and the press board 57 interposed between the holding board 56 and the press board 57.

이상에 의해 평행도의 조정이 종료되면, 질소가스가 퍼지되어 대기압상태에 있는 챔버(50)의 개구(52)를 셔터(53)을 낮춤으로써 열림으로 한다. 그리고, 도시하지 않는 반송장치로 반도체 웨이퍼(W)와 서포트플레이트(2)와의 적층체를 챔버(50) 내에 넣고, 핀(59) 상으로 보내, 셔터(53)으로 개구(52)를 닫고, 챔버(50) 내를 기밀한 상태로 한다. 도 5는 이 상태를 나타내고 있다.When the adjustment of the parallelism is completed by the above, nitrogen gas is purged and the opening 52 of the chamber 50 in the atmospheric pressure is opened by lowering the shutter 53. Then, a stack of the semiconductor wafer W and the support plate 2 is placed in the chamber 50 by a transfer device (not shown), sent onto the pin 59, and the opening 52 is closed by a shutter 53. The chamber 50 is kept airtight. 5 shows this state.

이어서 챔버(50) 내를 감압하고, 압력이 1 kPa 이하가 된 시점에서, 실린더 유닛(60)을 구동하여 핀(59)를 낮추고, 적층체를 150℃ 정도까지 가열되어 있는 유지대(56) 상에 올려둔다.Subsequently, the inside of the chamber 50 is depressurized, and when the pressure reaches 1 kPa or less, the cylinder unit 60 is driven to lower the pins 59, and the holding table 56 in which the laminate is heated to about 150 ° C. Put on

상기와 병행하여, 서보모터(68)을 구동하여 누름판(57)을 미리 설정한 위치까지 하강시키고, 유지대(56)과 누름판(57) 사이에서 적층체를 가압한다. 이 상태에서 약 1분간 유지하고 기판(W)와 서포트플레이트(2)를 열압착한다.In parallel with the above, the servomotor 68 is driven to lower the pressing plate 57 to a predetermined position, and the laminated body is pressed between the holding table 56 and the pressing plate 57. In this state, it is held for about 1 minute and the substrate W and the support plate 2 are thermocompressed.

그 다음, 질소가스를 퍼지하고 챔버(50) 내를 대기압으로 되돌려, 누름판(57)을 상승시키고, 셔터(53)을 낮춰, 열압착된 적층체를 챔버(50) 밖으로 반출한다.Then, the nitrogen gas is purged and the inside of the chamber 50 is returned to atmospheric pressure, the pressing plate 57 is raised, the shutter 53 is lowered, and the thermo-compressed laminate is carried out of the chamber 50.

본 발명에 의하면, 반도체 웨이퍼 등의 기판과 서포트플레이트를 압착시킬 때, 보이드(void) 및 가스의 발생을 억제할 수 있어, 기판과 서포트플레이트와의 첩부 정도(精度)도 향상된다.According to the present invention, when pressing a substrate and a support plate such as a semiconductor wafer, the generation of voids and gases can be suppressed, and the degree of adhesion between the substrate and the support plate is also improved.

Claims (4)

반도체 웨이퍼 등의 기판의 회로형성면을 서포트플레이트에 첩부하는 장치로서, 이 첩부장치는, 진공원으로 이어지는 동시에 기밀하게 폐색 가능한 챔버를 갖고, 이 챔버 내에는, 기판과 서포트플레이트와의 적층체를 올려두는 유지대와, 이 유지대에 대해 상대적으로 승강 이동 가능한 누름판이 배치되며, 이 누름판은 승강 이동 가능한 축에 설치되고, 이 축은 조인트를 매개로 하여 누름판의 평행도를 조정 가능하게 승강체에 지지되어 있는 것을 특징으로 하는 서포트플레이트의 첩부장치.A device for attaching a circuit forming surface of a substrate, such as a semiconductor wafer, to a support plate, the pasting device having a chamber that can be closed and airtight while being connected to a vacuum source, in which the stack of the substrate and the support plate is formed. A holding plate and a holding plate which are movable up and down relative to the holding plate are arranged, and the pressing plate is installed on the lifting movable axis, which is supported by the lifting body to adjust the parallelism of the pressing plate through the joint. The sticking apparatus of the support plate, characterized by the above-mentioned. 제1항의 첩부장치에 있어서, 상기 누름판은 토크(압력) 제어 및 위치 제어되는 것을 특징으로 하는 서포트플레이트의 첩부장치.The pasting apparatus of claim 1, wherein the pressing plate is subjected to torque (pressure) control and position control. 제1항의 첩부장치에 있어서, 상기 누름판 및 유지대 중 적어도 어느 한쪽에 히터가 설치되어 있는 것을 특징으로 하는 첩부장치.The sticking device of claim 1, wherein a heater is provided on at least one of the holding plate and the holding table. 제1항의 첩부장치에 있어서, 상기 누름판 및 유지대의 재질을 세라믹스로 한 것을 특징으로 하는 서포트플레이트의 첩부장치.The sticking apparatus of claim 1, wherein the pressing plate and the holder are made of ceramics.
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006000687B4 (en) 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Combination of a carrier and a wafer, device for separating the combination and methods for handling a carrier and a wafer
KR100861109B1 (en) 2006-12-27 2008-09-30 세메스 주식회사 Apparatus for processing substrate and method of processing substrate using the same
DE102007025380A1 (en) * 2007-05-30 2008-12-04 Robert Bürkle GmbH Multi-opening lamination press
DE502007004815D1 (en) 2007-11-30 2010-09-30 Komax Holding Ag Heating plate with lifting elements
JP5209947B2 (en) * 2007-12-13 2013-06-12 東京応化工業株式会社 Adhesive treatment method
JP5145126B2 (en) * 2008-06-11 2013-02-13 株式会社アルバック Bonding apparatus and bonding method
JP5515250B2 (en) * 2008-07-31 2014-06-11 富士通株式会社 Dust collecting mechanism and substrate cutting device
JP5159566B2 (en) * 2008-11-06 2013-03-06 リンテック株式会社 Sheet peeling apparatus and peeling method
EP2660851B1 (en) 2009-03-18 2020-10-14 EV Group GmbH Device and method for releasing a wafer from a holder
EP2706561B1 (en) * 2009-09-01 2017-04-05 EV Group GmbH Method for concentrically releasing a product substrate (e.g., a semiconductor wafer) from a support substrate by deformation of a flexible film mounted on a frame
EP2381464B1 (en) 2010-04-23 2012-09-05 EV Group GmbH Device and method for releasing a product substrate from a holder substrate
CN102034725B (en) * 2010-09-30 2013-01-30 东莞宏威数码机械有限公司 Automatic substrate positioning and loading device
JP2012104518A (en) * 2010-11-05 2012-05-31 Sumitomo Heavy Ind Ltd Substrate delivery mechanism of sealing device and substrate delivery method of sealing device
JP5149977B2 (en) * 2011-04-15 2013-02-20 リンテック株式会社 Semiconductor wafer processing method
JP2014160743A (en) * 2013-02-19 2014-09-04 Tokyo Ohka Kogyo Co Ltd Bonding apparatus and cleaning method of the same
CN107331604B (en) 2016-04-29 2020-06-16 上海微电子装备（集团）股份有限公司 Bonding equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002229044A (en) 2000-11-30 2002-08-14 Fujitsu Ltd Apparatus for manufacturing bonded substrate
KR100357881B1 (en) 1999-03-09 2002-10-25 앰코 테크놀로지 코리아 주식회사 Manufacturing apparatus of semiconductor device and its control method
JP2003273049A (en) * 2002-03-18 2003-09-26 Toshiba Ceramics Co Ltd Vacuum bonding device of wafer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081898B2 (en) * 1988-11-02 1996-01-10 三菱電機株式会社 Wafer sticker
JPH0582493A (en) * 1991-03-11 1993-04-02 Hitachi Ltd Wafer bonding device and method of bonding wafer using the device
JP3607143B2 (en) * 1999-11-19 2005-01-05 株式会社タカトリ Method and apparatus for attaching protective tape to semiconductor wafer
JP2002192394A (en) * 2000-12-28 2002-07-10 Mitsubishi Gas Chem Co Inc Press working method for inorganic substrate and press device therefor
JP2004153159A (en) * 2002-10-31 2004-05-27 Enzan Seisakusho:Kk Protection member adhering method for semiconductor wafer and its device
WO2004097509A1 (en) * 2003-04-25 2004-11-11 Fujitsu Limited System for producing pasted substrate
JP4549648B2 (en) * 2003-09-30 2010-09-22 信越半導体株式会社 Semiconductor bonding equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100357881B1 (en) 1999-03-09 2002-10-25 앰코 테크놀로지 코리아 주식회사 Manufacturing apparatus of semiconductor device and its control method
JP2002229044A (en) 2000-11-30 2002-08-14 Fujitsu Ltd Apparatus for manufacturing bonded substrate
JP2003273049A (en) * 2002-03-18 2003-09-26 Toshiba Ceramics Co Ltd Vacuum bonding device of wafer

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