KR101171352B1 - Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance - Google Patents

Thermo-setting double-sided adhesive film excellent in adhesive property and heat resistance Download PDF

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KR101171352B1
KR101171352B1 KR1020100059768A KR20100059768A KR101171352B1 KR 101171352 B1 KR101171352 B1 KR 101171352B1 KR 1020100059768 A KR1020100059768 A KR 1020100059768A KR 20100059768 A KR20100059768 A KR 20100059768A KR 101171352 B1 KR101171352 B1 KR 101171352B1
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parts
adhesive film
die
heat resistance
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KR20110139599A (en
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김우석
김상필
문기정
신현민
황남익
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도레이첨단소재 주식회사
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Priority to TW100100300A priority patent/TWI512077B/en
Priority to CN201110040294.7A priority patent/CN102295895B/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

본 발명은 적층 CSP(chip scale package)에 사용되는 접착 필름에 관한 것으로서, 보다 상세하게는 적층되는 다이 간의 접착과 전기적 간섭 방지 및 와이어(wire) 공간 확보의 역할을 하는 양면 접착 필름으로서 고온 작업 시 패키지 내부에 흡습되어있는 수분의 강한 수증기압으로 인한 패키지의 팝콘 크래킹 현상이나 계면 박리 등의 불량을 방지할 수 있는 내열성과 접착력이 우수한 열경화성 양면 접착 필름에 관한 것이다. 이를 위해 본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름은 폴리이미드 필름의 양면에 접착제 층이 코팅된 다이(Die) 간 접착 필름으로서, 상기 접착제 층은 카르복실기가 1~10 중량% 포함된 NBR 100중량부 대비 에폭시 수지 5~200중량부, 페놀 수지 50~200 중량부 및 아민 계 혹은 산무수물 계 경화제 중 선택된 1종 이상의 경화제 2~40 중량부, 디큐밀 퍼옥사이드 1~5 중량부를 함유하고, 상기 페놀 수지는 링 엔드 볼 방법(ring and ball method)에 의해 측정된 연화점이 60~120℃인 것을 특징으로 한다.The present invention relates to an adhesive film used in a laminated chip scale package (CSP), and more particularly, a double-sided adhesive film which serves to prevent adhesion and electrical interference between the stacked dies and to secure wire space during high temperature operation. The present invention relates to a thermosetting double-sided adhesive film having excellent heat resistance and adhesive strength, which can prevent defects such as popcorn cracking of a package or interface peeling due to strong water vapor pressure of moisture absorbed inside a package. To this end, the thermosetting double-sided adhesive film having excellent heat resistance and adhesion according to the present invention is a die-to-die adhesive film coated with an adhesive layer on both sides of a polyimide film, wherein the adhesive layer comprises 1 to 10% by weight of a carboxyl group. 5 to 200 parts by weight of epoxy resin, 50 to 200 parts by weight of phenol resin and 2 to 40 parts by weight of at least one curing agent selected from amine or acid anhydride curing agents, and 1 to 5 parts by weight of dicumyl peroxide, based on 100 parts by weight , The phenol resin is characterized in that the softening point measured by the ring end ball method (ring and ball method) is 60 ~ 120 ℃.

Description

내열성과 접착력이 우수한 열경화성 양면 접착 필름{THERMO-SETTING DOUBLE-SIDED ADHESIVE FILM EXCELLENT IN ADHESIVE PROPERTY AND HEAT RESISTANCE}Thermosetting double-sided adhesive film with excellent heat resistance and adhesion {THERMO-SETTING DOUBLE-SIDED ADHESIVE FILM EXCELLENT IN ADHESIVE PROPERTY AND HEAT RESISTANCE}

본 발명은 적층 CSP(chip scale package)에 사용되는 접착 필름에 관한 것으로서, 보다 상세하게는 적층되는 다이 간의 접착과 전기적 간섭 방지 및 와이어(wire) 공간 확보의 역할을 하는 양면 접착 필름으로서 내열성과 접착력이 우수하고 고온 작업 시 패키지 내부에 흡습되어있는 수분의 강한 수증기압으로 인한 패키지의 팝콘 크래킹 현상이나 계면 박리 등의 불량을 방지할 수 있는 내열성과 접착력이 우수한 열경화성 양면 접착 필름에 관한 것이다.The present invention relates to an adhesive film used in a laminated chip scale package (CSP), and more particularly, a double-sided adhesive film that serves to prevent adhesion between electrical dies to be stacked and to prevent wire interference, and to secure wire space. The present invention relates to a thermosetting double-sided adhesive film having excellent heat resistance and adhesive strength, which can prevent defects such as popcorn cracking or interfacial peeling of a package due to strong water vapor pressure of moisture absorbed inside the package during high temperature operation.

최근, 반도체 칩 사이즈(chip size)의 소형 및 고집적화에 따라 새로 개발된 것이 CSP(chip scale package)이다. 이러한 CSP(chip scale package)는 이름에서 알 수 있는 바와 같이, 칩 사이즈가 곧 패키지 사이즈(package size)와 거의 동일하다고 보아도 될 것이다.Recently, the chip scale package (CSP) has been newly developed according to the compactness and high integration of the semiconductor chip size. As the name implies, this chip scale package (CSP) may be considered that the chip size is almost the same as the package size.

이와 같은 현 패키지 트렌드(package trend)의 일환으로 한층 진보된 패키지 중의 하나가 stacked CSP이다. 즉 chip 위에 chip을 하나 이상 더 실장한 것으로 거의 같은 칩 사이즈의 패키지 안에 기존보다 훨씬 많은 용량을 실장할 수 있게 된 것이다. Stacked CSP 패키지는 박막 코어 기판 재료, 웨이퍼 후면절삭 기술과 기존의 BGA표면 실장 기술을 접목하여 기기의 기능을 배가하기 위해 메모리의 용량을 증가시킴과 동시에 크기도 감소시킬 수 있다는 장점이 있다. 이 기술을 이용하면 마더 보드의 면적을 효율적으로 사용할 수 있고 크기, 무게도 함께 줄일 수 있기 때문에 궁극적으로 시스템 레벨 비용절감이라는 목표도 달성할 수 있다. 또한 Stacked CSP는 시장에 유통되는 메모리를 여러 다른 디바이스와 연결 사용할 수 있으므로 전체 시스템 비용을 더 줄일 수 있는 방법을 제시해 준다.As part of this current package trend, one of the more advanced packages is the stacked CSP. That is, by mounting more than one chip on a chip, it is possible to mount much more capacity than before in a package of almost the same chip size. Stacked CSP packages combine thin-core core substrate materials, wafer back-cutting technology with existing BGA surface-mounting technology to increase memory capacity and reduce size to double the device's functionality. Using this technology, the area of the motherboard can be used efficiently and the size and weight can be reduced, ultimately achieving the goal of system-level cost savings. Stacked CSPs also offer a way to further reduce overall system cost by allowing you to use market-ready memory with many different devices.

이와 같이 칩 사이즈의 소형화에 따라 칩과 서브스트레이트(substrate)와의 클리어런스(clearance) 또한 더욱 세밀하게 되었고 새로운 패키지에 대응할 수 있는 접착제의 개발 또한 필수 불가결하게 되었다. 이에 따라 많은 기술이 개발되고 있는데, 종래의 기술로는 페이스트(paste)가 주로 사용되었으나 생산성과 레진 블리드 아웃(resin bleed out) 문제로 인해 최근에는 접착 필름의 형태로 기술 개발이 진행되고 있다.As the chip size becomes smaller, the clearance between the chip and the substrate is further refined, and the development of an adhesive to cope with a new package is also indispensable. Accordingly, many technologies are being developed. In the related art, paste is mainly used, but technology development in the form of an adhesive film has recently been progressed due to problems of productivity and resin bleed out.

현재 대부분의 패키지는 서브스트레이트와 관계없이 CSP type으로 전환되고 있는 실정이며 환경 친화 제품 일환으로 대부분 조립업체들이 리드 프리(lead-free) 제품개발을 활발히 진행 중이다. 그러나 이런 제품들은 기존의 유연 솔더(solder) 보다 높은 녹는점(melting point, 약 220℃)을 가지고 있는 단점이 있다. 이를 극복하기 위해 조립에 사용되는 다른 제품 또한 이러한 온도에 의한 팝콘 크래킹(popcorn cracking)이나 기타 패키지 불량을 극복할 수 있는 제품이어야 하기 때문에 요구되는 신뢰성 레벨(level) 또한 점점 강화되고 있다. 예를 들면 기존의 솔더 사용 시 그 응용온도는 대략 220℃ 이하로 비교적 낮았으나 현재의 무연 솔더의 경우 응용 온도는 260℃ 정도로 높기 때문에 이와 같은 고온 작업 시 패키지 내부에 흡습되어있는 수분이 고온에 의해 강한 수증기압을 발생시키게 되고 이 수증기압은 패키지의 팝콘 크래킹 현상이나 계면 박리 등의 불량을 유발할 수 있기 때문이다.Currently, most packages are being converted to CSP type regardless of substrate, and most of the assembly companies are actively developing lead-free products as part of environment-friendly products. However, these products have a disadvantage of having a higher melting point (about 220 ° C) than conventional solder. The level of reliability required is also increasing because other products used in assembly to overcome this must also be able to overcome popcorn cracking or other package failures caused by these temperatures. For example, when the conventional solder is used, its application temperature is relatively low (approx. 220 ℃ or less). However, in the case of current lead-free solder, the application temperature is high (260 ℃). This is because a strong water vapor pressure is generated, and this water vapor pressure may cause a defect such as popcorn cracking or interfacial peeling of the package.

따라서 이러한 여러 문제점들을 극복할 수 있는 접착 필름의 개발이 시급한 실정이다.Therefore, it is urgent to develop an adhesive film that can overcome these various problems.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 본 발명의 목적은 내열성과 접착력이 우수하고 고온 작업 시 패키지 내부에 흡습되어있는 수분의 강한 수증기압으로 인한 패키지의 팝콘 크래킹 현상이나 계면 박리 등의 불량을 방지할 수 있는 내열성과 접착력이 우수한 열경화성 양면 접착 필름을 제공하고자 하는 것이다.The present invention has been made to solve the above problems, an object of the present invention is excellent in heat resistance and adhesive force, popcorn cracking phenomenon or interface peeling of the package due to the strong water vapor pressure of moisture absorbed inside the package during high temperature operation It is to provide a thermosetting double-sided adhesive film excellent in heat resistance and adhesion that can prevent the failure of.

본 발명의 상기 및 다른 목적과 이점은 바람직한 실시예를 설명한 하기의 설명으로부터 보다 분명해 질 것이다.These and other objects and advantages of the present invention will become more apparent from the following description of a preferred embodiment thereof.

상기 목적은, 폴리이미드 필름의 양면에 접착제 층이 코팅된 다이(Die) 간 접착 필름으로서, 상기 접착제 층은 카르복실기가 1~10 중량% 포함된 NBR 100중량부 대비 에폭시 수지 5~200중량부, 페놀 수지 50~200 중량부 및 아민 계 혹은 산무수물 계 경화제 중 선택된 1종 이상의 경화제 2~40 중량부, 디큐밀 퍼옥사이드 1~5 중량부를 함유하고, 상기 페놀 수지는 링 엔드 볼 방법(ring and ball method)에 의해 측정된 연화점이 60~120℃인 것을 특징으로 하는 내열성과 접착력이 우수한 열경화성 양면 접착 필름에 의해 달성된다.The object is a die-to-die adhesive film coated with an adhesive layer on both sides of the polyimide film, the adhesive layer is 5 to 200 parts by weight of epoxy resin compared to 100 parts by weight of NBR containing 1 to 10% by weight of carboxyl groups, 50 to 200 parts by weight of a phenol resin and 2 to 40 parts by weight of at least one curing agent selected from amine or acid anhydride curing agents, and 1 to 5 parts by weight of dicumyl peroxide, wherein the phenol resin is a ring end ball method (ring and It is achieved by a thermosetting double-sided adhesive film excellent in heat resistance and adhesion, characterized in that the softening point measured by the ball method) is 60 ~ 120 ℃.

여기서, 상기 접착 필름은 다이(2cm X 2cm)와 다이(2cm X 2cm)를 125℃ / 1.5kg / 1초 조건으로 본딩한 후, 경화(175℃ / 1시간)공정을 거친 다음 상온(25℃)에서의 다이 전단응력이 5kg 이상이고, 260℃에서의 다이 전단응력이 100g 이상인 것을 특징으로 한다.Here, the adhesive film is bonded to the die (2cm X 2cm) and the die (2cm X 2cm) at 125 ℃ / 1.5kg / 1 second condition, after the curing (175 ℃ / 1 hour) process and room temperature (25 ℃ The die shear stress at) is 5 kg or more, and the die shear stress at 260 ° C. is 100 g or more.

본 발명에 따르면, 내열성과 접착력이 우수하고 고온 작업 시 패키지 내부에 흡습되어있는 수분의 강한 수증기압으로 인한 패키지의 팝콘 크래킹 현상이나 계면 박리 등의 불량을 방지할 수 있는 등의 효과를 가진다.According to the present invention, it is excellent in heat resistance and adhesive strength, and has the effect of preventing defects such as popcorn cracking phenomenon or interface peeling of the package due to the strong water vapor pressure of moisture absorbed inside the package during high temperature work.

도 1은 적층 스택 칩 스케일 패키지의 단면도.
도 2는 본 발명의 일 실시예에 따른 다이 간 접착 필름의 단면도.1 is a cross-sectional view of a stacked stack chip scale package.
Figure 2 is a cross-sectional view of the die-to-die adhesive film according to an embodiment of the present invention.

이하, 본 발명의 실시예와 도면을 참조하여 본 발명을 상세히 설명한다. 이들 실시예는 오로지 본 발명을 보다 구체적으로 설명하기 위해 예시적으로 제시한 것일 뿐, 본 발명의 범위가 이들 실시예에 의해 제한되지 않는다는 것은 당업계에서 통상의 지식을 가지는 자에 있어서 자명할 것이다.Hereinafter, the present invention will be described in detail with reference to embodiments and drawings of the present invention. These examples are only presented by way of example only to more specifically describe the present invention, it will be apparent to those skilled in the art that the scope of the present invention is not limited by these examples. .

도 1은 적층 스택 칩 스케일 패키지(Stack Chip Scale Package)의 단면도이고, 도 2는 본 발명의 일 실시예에 따른 다이 간 접착 필름의 단면도이다.1 is a cross-sectional view of a stack chip scale package (Stack Chip Scale Package), Figure 2 is a cross-sectional view of the die-to-die adhesive film according to an embodiment of the present invention.

도 2에서 확인할 수 있는 바와 같이, 본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름은 폴리이미드 필름(10)의 양 면에 접착제 층(20)이 코팅되어 있는데, 상기 접착제 층(20)은 카르복실기가 포함된 NBR 및 에폭시 수지, 페놀 수지, 경화제 등을 포함하는 것을 특징으로 하고, 상기 접착제 층(20) 상부 면에 박리 필름(30)을 라미네이션하여 이루어져 있다.As can be seen in Figure 2, the heat-resistant double-sided adhesive film excellent in heat resistance and adhesion according to the present invention is coated with an adhesive layer 20 on both sides of the polyimide film 10, the adhesive layer 20 is NBR containing a carboxyl group and an epoxy resin, a phenol resin, a curing agent, and the like, and the adhesive layer 20 is formed by laminating the release film 30 on the upper surface.

본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름의 상기 폴리이미드 필름(10)의 두께는 요구되는 패키지의 높이에 맞추어 자유롭게 선택될 수 있다.The thickness of the polyimide film 10 of the thermosetting double-sided adhesive film excellent in heat resistance and adhesion according to the present invention can be freely selected according to the height of the package required.

본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름의 상기 접착제 층(20)은 NBR 100 중량부에 대하여 다관능성 에폭시 수지 5~200 중량부, 다관능성 페놀 수지 5~200 중량부의 비율이며 여기에 경화제, 고무 가교제 및 기타 첨가제를 포함하여 이루어진다.The adhesive layer 20 of the heat-resistant double-sided adhesive film excellent in heat resistance and adhesion according to the present invention is a ratio of 5 to 200 parts by weight of polyfunctional epoxy resin, 5 to 200 parts by weight of polyfunctional phenol resin with respect to 100 parts by weight of NBR. Hardener, rubber crosslinker and other additives.

상기 카르복실기가 포함된 NBR은 중량 평균 분자량이 3,000~200,000의 분자량을 갖는 것으로, 아크릴로니트릴 함유율이 20~50 중량%이며, 카르복실기 함유율이 1~10 중량% 인 것으로 한다. 이 때, 중량 평균 분자량이 3,000 보다 낮으면 고온에서의 접착력이 불량해지고, 또 200,000 보다 높아지면 용매에 대한 용해성이 나빠지며 용액 제조 시 점도가 증가하여 작업성이 불량해지고, 상온 접착력 또한 저하된다. 또 아크릴로니트릴 함량이 20 중량% 보다 낮은 경우 용매 용해성이 낮아지며, 50 중량% 보다 높아지면 전기 절연성이 불량해진다. 그리고 카르복실기의 함유 율이 1~10 중량%인 경우 NBR과 다른 수지, 그리고 접착 기재와의 결합이 용이하게 되므로 접착력이 증가한다. 카르복실기가 함유되지 않은 NBR의 경우에는 접착력이 불량하게 된다.The NBR containing the carboxyl group has a weight average molecular weight of 3,000 to 200,000, an acrylonitrile content of 20 to 50% by weight, and a carboxyl group content of 1 to 10% by weight. At this time, when the weight average molecular weight is lower than 3,000, the adhesive force at high temperature is poor, and when the weight average molecular weight is higher than 200,000, the solubility in the solvent is poor, the viscosity is increased during solution preparation, and the workability is poor, and the normal temperature adhesive force is also lowered. In addition, when the acrylonitrile content is lower than 20% by weight, the solvent solubility is lowered. When the acrylonitrile content is higher than 50% by weight, the electrical insulation is poor. And when the content rate of the carboxyl group is 1 to 10% by weight, the adhesion between NBR and other resins, and the adhesive substrate is easy to facilitate the adhesion. In the case of NBR containing no carboxyl group, the adhesive force is poor.

또한 상기 에폭시 수지는 NBR 100 중량부에 대하여 5~200 중량부를 첨가하는 것이 바람직하며 비스페놀 에이(Bisphenol-A) 타입 에폭시, 비스페놀 에프(F) 타입 에폭시, 노블락(Novolac) 에폭시가 사용될 수 있으며 에폭시의 당량(g/eq)은 100~1000인 것을 사용할 수 있다. In addition, the epoxy resin is preferably added 5 to 200 parts by weight with respect to 100 parts by weight of NBR, bisphenol-A type epoxy, bisphenol F (F) type epoxy, Novolac epoxy may be used and the epoxy The equivalent (g / eq) can use 100-1000 thing.

또한 상기 페놀 수지는 NBR 100 중량부에 대하여 50~200 중량부를 첨가하는 것이 바람직한데, 페놀 수지의 함량이 200 중량부 보다 클 경우 접착제 층이 브리틀(brittle)하게 되어 필름 형태로 제조가 불가능하게 된다. 또한 상기 페놀 수지의 분자량은 200~900인 것이 바람직하며, 링 엔드 볼 방법(ring and ball method)에 의해 측정된 연화점이 60~120℃인 것을 사용하는 것이 바람직하다. 연화점이 60℃ 이하인 것을 사용하게 되면 페이스트와 같은 레진 블리드 아웃이 발생할 수 있으며, 이와는 반대로 연화점이 너무 높은 경우, 접착 필름의 다이 접착을 위해 높은 온도를 가해야 하며 접착력 또한 불량해 진다. 따라서 적정 온도(60~120℃)의 연화점을 갖는 수지를 사용하여야 한다.In addition, the phenol resin is preferably added to 50 ~ 200 parts by weight based on 100 parts by weight of NBR, if the content of the phenol resin is greater than 200 parts by weight, the adhesive layer is brittle (brittle) is impossible to manufacture in the form of a film do. In addition, the molecular weight of the phenol resin is preferably 200 ~ 900, it is preferable to use a softening point of 60 ~ 120 ℃ measured by the ring end ball method (ring and ball method). If a softening point is used at 60 ° C. or lower, resin bleed out such as paste may occur. On the contrary, when the softening point is too high, a high temperature must be applied for die bonding of the adhesive film, and the adhesive force is also poor. Therefore, it is necessary to use a resin having a softening point of an appropriate temperature (60 ~ 120 ℃).

또한 상기 경화제는 아민 계 경화제와 산무수물 계 경화제를 단독 혹은 함께 사용할 수 있으며 NBR 100 중량부 대비 2~40 중량부 사용하는 것이 바람직하다. 또한 고무 가교제로 유, 무기 과산화물을 사용할 수 있으며 NBR 100 중량부 대비 1~5 중량부를 첨가하여 사용할 수 있다.In addition, the curing agent may be used alone or in combination with an amine-based curing agent and an acid anhydride-based curing agent, it is preferable to use 2 to 40 parts by weight compared to 100 parts by weight of NBR. In addition, oil and inorganic peroxides may be used as the rubber crosslinking agent, and may be used by adding 1 to 5 parts by weight based on 100 parts by weight of NBR.

이상의 조성으로 이루어진 접착제 층(20)은 점도가 200 ~ 1,500CPS 이고, 폴리이미드 필름(10) 양면에 건조 후의 두께가 각각 10~30㎛가 되도록 도포하고 50~180℃에서 2~10분 동안 경화한 후에 박리 필름(30)을 붙이는 과정을 거쳐 접착 필름을 얻을 수 있다. 접착제 층의 두께는 패키지에 요구되는 높이에 따라 자유롭게 변화시킬 수 있다.The adhesive layer 20 having the above composition has a viscosity of 200 to 1,500 CPS and is applied to both sides of the polyimide film 10 so that the thickness after drying is 10 to 30 μm, respectively, and cured at 50 to 180 ° C. for 2 to 10 minutes. After that, the adhesive film can be obtained through a process of pasting the release film 30. The thickness of the adhesive layer can be freely varied depending on the height required for the package.

또한 본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름의 상기 박리 필름(30)은 두께가 특별히 국한되진 않지만 일반적으로 38㎛인 것이 사용되며, 사용 가능한 박리 필름으로는 폴리에틸렌, 폴리에틸렌테레프탈레이트, 폴리프로필렌 필름 및 경우에 따라서는 이들에 실리콘 수지로 박리성을 부여한 것을 사용할 수 있다.In addition, the release film 30 of the heat-curable double-sided adhesive film having excellent heat resistance and adhesion according to the present invention is not particularly limited in thickness, but generally 38 μm is used, and as the release film usable, polyethylene, polyethylene terephthalate, poly A propylene film and the thing which provided the peelability with silicone resin to these in some cases can be used.

또한 본 발명에 따른 내열성과 접착력이 우수한 열경화성 양면 접착 필름은 상기 접착 필름은 다이(2cm X 2cm)와 다이(2cm X 2cm)를 125℃ / 1.5kg / 1초 조건으로 본딩한 후, 경화(175℃ / 1시간)공정을 거친 다음 상온(25℃)에서의 다이 전단응력이 5kg 이상이고, 260℃에서의 다이 전단응력이 100g 이상인 것이 바람직하다.In addition, the thermosetting double-sided adhesive film having excellent heat resistance and adhesion according to the present invention, the adhesive film is cured after bonding the die (2cm X 2cm) and the die (2cm X 2cm) at 125 ℃ / 1.5kg / 1 second condition, It is preferred that the die shear stress at room temperature (25 ° C.) is 5 kg or more, and the die shear stress at 260 ° C. is 100 g or more.

이하, 실시예와 비교예를 통해 본 발명을 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples.

[실시예 1]Example 1

NBR(아크릴로니트릴 함량 27중량%, 카르복실기 함량 5중량%) 120중량부에 페놀노블락 에폭시(epoxy equivalent weight 199) 수지 50중량부, 하기 구조식 1로 표시되는 페놀 수지 150중량부, 그리고 경화제로 헥사메톡시 메틸멜라민 10중량부, 프탈릭 안하이드라이드 10중량부를 첨가하고 고무 가교제로 디큐밀 퍼옥사이드를 2중량부 첨가하고 아세톤 용제를 사용하여 점도가 400CPS가 되도록 아세톤의 양을 조절한다. 상온에서 모든 성분이 용해될 때까지 녹여 준 후 이 접착제 액을 두께가 25㎛인 폴리이미드 필름 양면에 건조 후의 두께가 각각 12㎛이 되도록 도포하고, 건조(150℃, 3분)한 후, 두께가 38㎛인 폴리에틸렌테레프탈레이트 필름을 라미네이트하여, 접착 필름을 제조하였다.NBR (27% by weight of acrylonitrile, 5% by weight of carboxyl group) 50 parts by weight of phenol noble epoxy (epoxy equivalent weight 199) resin, 150 parts by weight of phenol resin represented by the following structural formula 1, and hexa 10 parts by weight of methoxy methylmelamine and 10 parts by weight of phthalic anhydride are added, 2 parts by weight of dicumyl peroxide is added with a rubber crosslinking agent, and the amount of acetone is adjusted to a viscosity of 400 CPS using an acetone solvent. After dissolving at room temperature until all the components are dissolved, the adhesive liquid is applied to both sides of the polyimide film having a thickness of 25 μm so that the thickness after drying is 12 μm, respectively, and dried (150 ° C., 3 minutes). A polyethylene terephthalate film having a thickness of 38 μm was laminated to prepare an adhesive film.

(구조식 1, 연화점 : 110℃)(Structure 1, Softening Point: 110 ℃)

Figure 112010040493038-pat00001
Figure 112010040493038-pat00001

[실시예 2][Example 2]

실시예 1과 같은 조성 중 페놀 수지만을 하기 구조식 2로 표시되는 페놀 수지로 대체하여 제조된 접착제 액을 사용하여 실시예 1과 같은 방법으로 접착 필름을 제조하였다.An adhesive film was prepared in the same manner as in Example 1 using an adhesive liquid prepared by replacing only the phenol resin in the same composition as in Example 1 with the phenol resin represented by Structural Formula 2.

(구조식 2, 연화점 : 85℃)(Formula 2, Softening Point: 85 ℃)

Figure 112010040493038-pat00002
Figure 112010040493038-pat00002

[실시예 3][Example 3]

실시예 1과 같은 조성 중 에폭시 수지만을 하기 구조식 3으로 표시되는 수지로 대체하여 제조된 접착제 액을 사용하여 실시예 1과 같은 방법으로 접착 필름을 제조하였다.An adhesive film was prepared in the same manner as in Example 1 using an adhesive solution prepared by replacing only the epoxy resin in the same composition as in Example 1 with a resin represented by Structural Formula 3 below.

(구조식 3)(Structure 3)

Figure 112010040493038-pat00003
Figure 112010040493038-pat00003

[비교예 1]Comparative Example 1

실시예 1과 동일한 조성 중 NBR 만을 카르복실기를 함유하지 않은 NBR로 대체하여 제조된 접착제 액을 사용하여 실시예 1과 같은 방법으로 접착 필름을 제조하였다.An adhesive film was prepared in the same manner as in Example 1 using an adhesive liquid prepared by replacing only NBR in the same composition as in Example 1 with NBR containing no carboxyl group.

[비교예 2]Comparative Example 2

실시예 1과 동일한 조성 중 페놀 수지만을 250중량부로 증량한 것 이외에는 실시예 1과 동일한 조성, 방법으로 접착 필름을 제조하였다.An adhesive film was prepared in the same composition and method as in Example 1, except that only the phenol resin was increased to 250 parts by weight in the same composition as in Example 1.

[비교예 3]Comparative Example 3

실시예 1과 동일한 조성 중 페놀 수지 만을 50중량부로 감량한 것 이외에는 실시예 1과 동일한 조성, 방법으로 접착 필름을 제조하였다.An adhesive film was prepared in the same composition and method as in Example 1, except that only the phenol resin was reduced to 50 parts by weight in the same composition as in Example 1.

[비교예 4][Comparative Example 4]

실시예 1과 동일한 조성 중 페놀 수지만을 동일 구조의 연화점이 125℃인 것으로 대체한 것 이외에는 실시예 1과 동일한 조성, 방법으로 접착 필름을 제조하였다. An adhesive film was prepared in the same composition and method as in Example 1, except that only the phenolic resin of the same composition as in Example 1 was replaced with a softening point of 125 ° C.

상기 제조된 본 발명에 따른 실시예의 접착필름과 비교예의 접착필름을 사용하여 하기의 실험예에 따라 그 특성를 평가하고 그 결과를 다음 표 1에 나타내었다.Using the adhesive film of the embodiment and the adhesive film of the comparative example prepared according to the present invention to evaluate the characteristics according to the following experimental example and the results are shown in Table 1 below.

[실험예 1: 필름 형태 유지 여부 측정]Experimental Example 1 Measurement of Film Form Retention

실시예와 비교예와 같이 제조된 접착 필름에 물리적인 충격을 가한 후에도 접착 필름 형태가 유지되는지를 확인하는 평가로 본 접착 필름을 이용하여 반도체 패키지 제조 시 접착 필름에 가해지는 커팅(cutting) 충격에 접착제가 깨지는지를 확인하는 평가이다. Evaluation to confirm that the shape of the adhesive film is maintained even after the physical impact on the adhesive film prepared as in Examples and Comparative Examples to the cutting impact applied to the adhesive film during the manufacturing of a semiconductor package using the adhesive film It is evaluation to check whether an adhesive is broken.

평가 방법은 제조된 접착 필름을 1cm 두께의 유리 판 위에 5cm X 5cm 크기로 올려 놓은 후 1cm X 1cm의 크기(무게 100g)로 만들어진 추를 20cm의 높이에서 자유 낙하시키고 그 후에 접착제 층을 관찰하여 접착제 층의 깨짐 유무를 확인한다. 깨짐이 발견 되지 않을 때 "OK"로 표기하며 깨짐 발견 시 "Fail"로 표기하였다.The evaluation method was to place the prepared adhesive film on a 1 cm thick glass plate in a size of 5 cm X 5 cm, then freely drop a weight made of 1 cm X 1 cm (weight 100 g) at a height of 20 cm and then observe the adhesive layer to Check the floor for cracks. When no crack is found, it is marked "OK" and when it is found, it is marked as "Fail".

[실험예 2: 상온 다이 전단응력 측정]Experimental Example 2 Measurement of Normal Die Shear Stress

Semi-auto die bonder 장비를 이용하여 125℃ / 1.5kg / 1초 조건으로 다이(2cm X 2cm)와 다이(2cm X 2cm)를 본딩한 후 175℃ / 1시간 동안 경화 후 상온 하에서 전단응력을 측정하였다. 통상적으로 에폭시 몰딩 컴파운딩 혹은 타 반도체 패키지 조립 공정 시, 접착된 다이의 변형을 방지하기 위해 5kg 이상의 다이 전단응력이 요구된다.Bonding the die (2cm X 2cm) and the die (2cm X 2cm) at 125 ℃ / 1.5kg / 1 second using a semi-auto die bonder equipment and measuring the shear stress at room temperature after curing for 175 ℃ / 1 hour It was. Typically, more than 5 kg of die shear stress is required in epoxy molding compounding or other semiconductor package assembly processes to prevent deformation of the bonded die.

[실험예 3: 고온 다이 전단응력 측정]Experimental Example 3 Measurement of High Temperature Die Shear Stress

상온 다이 전단응력 측정과 동일한 방법으로 본딩과 경화를 한 후 260℃에서 전단응력을 측정한다.After bonding and curing in the same manner as the normal temperature die shear stress measurement, the shear stress is measured at 260 ℃.

솔더 공정 시 가해지는 260℃ 고온에서 접착 필름으로 접착된 다이가 접착력 저하로 인해 변형되는 것을 방지하기 위해 100g 이상의 전단응력이 요구되고 있다.Shear stress of 100g or more is required to prevent deformation of the die bonded to the adhesive film at a high temperature of 260 ° C applied during the soldering process due to a decrease in adhesion force.

[실험예 4: PCT(Pressure Cooker Test) 평가]Experimental Example 4: Evaluation of PCT (Pressure Cooker Test)

상온 다이 전단응력의 측정과 같이 다이와 다이를 접착한 후 85℃ / 85%RH / 84시간 동안 PCT 후 엑스레이를 이용하여 접착 필름과 다이 간 기포 혹은 디라미네이션(delamination)을 확인하였다. 기포 혹은 디라미네이션이 발견되지 않은 경우 "Pass", 반면 기포 혹은 디라미네이션 발견 시 "Fail"로 표기하였다.After the die and the die was bonded as in the measurement of room temperature die shear stress, after the PCT for 85 ℃ / 85% RH / 84 hours X-ray was used to check the bubble or delamination between the adhesive film and the die (demination). "Pass" if no bubbles or delaminations were found, while "Fail" is indicated for bubbles or delaminations.

한편, 상용의 다이 간 접착 필름은 상기의 4가지의 모든 평가에서 Fail이 없어야 한다. On the other hand, commercial die-to-die adhesive films should be free of fail in all four evaluations above.

필름 형태
유지 여부Film form
Maintain 상온 다이
전단응력(kg)Room temperature die
Shear stress (kg) 고온 다이
전단응력(g)High temperature die
Shear stress (g) PCT 평가PCT Evaluation 실시예 1Example 1 OKOK 16.116.1 400400 PassPass 실시예 2Example 2 OKOK 18.618.6 640640 PassPass 실시예 3Example 3 OKOK 9.39.3 150150 PassPass 비교예 1Comparative Example 1 OKOK 2.12.1 6262 FailFail 비교예 2Comparative Example 2 Fail Fail 11.611.6 210210 FailFail 비교예 3Comparative Example 3 OKOK 1.31.3 5555 FailFail 비교예 4Comparative Example 4 OKOK 3.73.7 160160 PassPass

상기 표 1에서 보는 바와 같이, 본 발명의 실시예에 따른 다이 간 접착 필름은 기본 특성인 필름형태 유지, 상온 다이 전단응력, 고온 다이 전단응력, PCT 평가에서 우수한 결과를 나타냄을 알 수 있다.As shown in Table 1, it can be seen that the die-to-die adhesive film according to the embodiment of the present invention exhibits excellent results in film form maintenance, room temperature die shear stress, high temperature die shear stress, and PCT evaluation.

본 명세서에서는 본 발명자들이 수행한 다양한 실시예 가운데 몇 개의 예만을 들어 설명하는 것이나 본 발명의 기술적 사상은 이에 한정하거나 제한되지 않고, 당업자에 의해 변형되어 다양하게 실시될 수 있음은 물론이다. It is to be understood that the present invention is not limited to the above embodiments and various changes and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention.

1: 와이어 2: 몰딩 컴파운드
3: 접착필름 4: 솔더마스크
5: 패턴 6: 서브스트레이트
7: 도우터 다이(daughter die) 8: 마더 다이(mother die)
10 : 폴리이미드 필름 20 : 접착제 층
30 : 박리 필름1: wire 2: molding compound
3: adhesive film 4: solder mask
5: pattern 6: substrate
7: daughter die 8: mother die
10 polyimide film 20 adhesive layer
30: peeling film

Claims (2)

폴리이미드 필름의 양면에 접착제 층이 코팅된 다이(Die) 간 접착 필름으로서,
상기 접착제 층은 카르복실기가 1~10 중량% 포함된 NBR 100 중량부 대비 에폭시 수지 5~200 중량부, 페놀 수지 50~200 중량부 및 아민 계 혹은 산무수물 계 경화제 중 선택된 1종 이상의 경화제 2~40 중량부, 디큐밀 퍼옥사이드 1~5 중량부를 함유하고,
상기 페놀 수지는 링 엔드 볼 방법(ring and ball method)에 의해 측정된 연화점이 60~120℃이며,
상기 접착 필름은 2cm X 2cm의 다이와 2cm X 2cm의 다이를 125℃/1.5kg/1초 조건으로 본딩한 후, 175℃에서 1시간 동안의 경화 공정을 거친 다음 25℃ 상온에서의 다이 전단응력이 5kg 이상이고, 260℃에서의 다이 전단응력이 100g 이상인 것을 특징으로 하는, 내열성과 접착력이 우수한 열경화성 양면 접착 필름.
A die-to-die adhesive film coated with an adhesive layer on both sides of a polyimide film,
The adhesive layer may include 5 to 200 parts by weight of epoxy resin, 50 to 200 parts by weight of phenol resin, and an amine or acid anhydride curing agent 2 to 40 parts by weight based on 100 parts by weight of NBR containing 1 to 10% by weight of carboxyl groups. Parts by weight, 1 to 5 parts by weight of dicumyl peroxide,
The phenol resin has a softening point of 60 ~ 120 ℃ measured by the ring end ball method (ring and ball method),
The adhesive film is bonded to a die of 2cm X 2cm and a die of 2cm X 2cm at 125 ℃ / 1.5kg / 1 second conditions, after the curing process for 1 hour at 175 ℃ and die shear stress at 25 ℃ room temperature A thermosetting double-sided adhesive film excellent in heat resistance and adhesiveness, characterized in that it is 5 kg or more and a die shear stress at 260 ° C. is 100 g or more.
삭제delete
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