KR101119863B1 - 대기압 화학 기상 증착 - Google Patents
대기압 화학 기상 증착 Download PDFInfo
- Publication number
- KR101119863B1 KR101119863B1 KR1020077003864A KR20077003864A KR101119863B1 KR 101119863 B1 KR101119863 B1 KR 101119863B1 KR 1020077003864 A KR1020077003864 A KR 1020077003864A KR 20077003864 A KR20077003864 A KR 20077003864A KR 101119863 B1 KR101119863 B1 KR 101119863B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor material
- substrate
- fluid mixture
- temperature
- inert gas
- Prior art date
Links
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 44
- 239000012530 fluid Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000009833 condensation Methods 0.000 claims abstract description 11
- 230000005494 condensation Effects 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 230000008016 vaporization Effects 0.000 claims abstract description 10
- 230000001939 inductive effect Effects 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract 7
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 19
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 15
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910001370 Se alloy Inorganic materials 0.000 claims description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000012799 electrically-conductive coating Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 230000005693 optoelectronics Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 239000011364 vaporized material Substances 0.000 description 8
- 238000001953 recrystallisation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- -1 vapor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02562—Tellurides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (14)
- 대기압에서 반도체 재료의 응축 온도보다 낮은 온도로 가열된 기판을 코팅하는 방법이며,반도체 재료의 제어된 질량과 가열된 불활성 가스 스트림을 혼합하는 단계와,반도체 재료의 응축 온도보다 높은 온도를 갖는 유체 혼합물을 생성하기 위해 가열된 불활성 가스 스트림 내의 반도체 재료를 기화하는 단계와,대기압에 있는 기판에 유체 혼합물을 유도하는 단계와,기판의 표면 위에 반도체 재료의 층을 적층하는 단계를 포함하는 코팅 방법.
- 제1항에 있어서, 반도체 재료는 카드뮴 황화물 및 카드뮴 텔루라이드 중 하나인 코팅 방법.
- 제1항에 있어서, 불활성 가스는 질소인 코팅 방법.
- 제1항에 있어서, 유체 혼합물의 온도는 800℃ 내지 1100℃의 범위인 코팅 방법.
- 제1항에 있어서, 기판은 유리를 포함하는 코팅 방법.
- 제5항에 있어서, 유리는 투명한 전기 전도성 코팅을 포함하는 코팅 방법.
- 제1항에 있어서, 기판은 585℃ 내지 650℃의 온도 범위를 갖는 코팅 방법.
- 제1항에 있어서, 기화, 유도 및 적층의 단계가 적어도 한번 반복되어, 기판 위에 반도체 재료의 적어도 하나의 추가 층을 적층하는 코팅 방법.
- 대기압에서 반도체 재료의 응축 온도보다 낮은 온도로 가열된 기판을 코팅하는 방법이며,반도체 재료의 제어된 질량과 가열된 불활성 가스 스트림을 혼합하는 단계와,800℃ 내지 1100℃의 온도 범위를 갖는 유체 혼합물을 생성하기 위해, 가열된 불활성 가스 스트림 내의 반도체 재료를 기화하는 단계와,대기압에서, 투명한 전기 전도성 코팅을 갖고 585℃ 내지 650℃의 온도 범위를 갖는 기판에 유체 혼합물을 유도하는 단계와,기판의 표면 위에 반도체 재료의 층을 적층하는 단계를 포함하는 코팅 방법.
- 제9항에 있어서, 기화, 유도 및 적층의 단계가 적어도 한번 반복되어, 기판 위에 반도체 재료의 적어도 하나의 추가 층을 적층하는 코팅 방법.
- 대기압에서 반도체 재료의 응축 온도보다 낮은 온도로 가열된 기판을 코팅하는 방법이며,반도체 재료의 제어된 질량과 가열된 불활성 가스 스트림을 혼합하는 단계와,800℃ 내지 1100℃의 온도 범위를 갖는 유체 혼합물을 생성하기 위해, 가열된 불활성 가스 스트림 내의 반도체 재료를 기화하는 단계와,대기압에서, 투명한 전기 전도성 코팅을 갖고 585℃ 내지 650℃의 온도 범위를 갖는 기판에 유체 혼합물을 유도하는 단계와,기판의 표면 위에 반도체 재료의 층을 적층하는 단계와,기화, 유도 및 적층의 단계를 적어도 한 번 반복하여, 기판 위에 반도체 재료의 적어도 하나의 추가 층을 적층하는 단계를 포함하는 코팅 방법.
- 제1항에 있어서, 반도체 재료는 CIGS(구리-인듐-갈륨-디셀레나이드), Cds/CIS 합금(카드뮴 황화물/구리-인듐-셀레늄 합금), 비정질 실리콘 또는 박막 다결정 실리콘 및 Zn(O, S, OH)x/CIGS(아연 산화물 황화물 수산화물/구리-인듐-갈륨-디셀레나이드) 중 하나인 코팅 방법.
- 제1항에 있어서, 유체 혼합물의 공급원에 대해 기판의 이동을 제공하는 단계를 더 포함하는 코팅 방법.
- 제1항에 있어서, 기판으로의 반도체 재료의 적층률을 제어하기 위해 유체 혼합물의 질량 유동 속도를 선택적으로 제어하는 단계를 더 포함하는 코팅 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60240504P | 2004-08-18 | 2004-08-18 | |
US60/602,405 | 2004-08-18 | ||
PCT/US2005/027368 WO2006023262A2 (en) | 2004-08-18 | 2005-08-02 | Atmospheric pressure chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070074545A KR20070074545A (ko) | 2007-07-12 |
KR101119863B1 true KR101119863B1 (ko) | 2012-02-22 |
Family
ID=35968050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077003864A KR101119863B1 (ko) | 2004-08-18 | 2005-08-02 | 대기압 화학 기상 증착 |
Country Status (17)
Country | Link |
---|---|
US (2) | US7674713B2 (ko) |
EP (2) | EP1794349A2 (ko) |
JP (3) | JP5026971B2 (ko) |
KR (1) | KR101119863B1 (ko) |
CN (2) | CN101432458A (ko) |
BR (1) | BRPI0514490A (ko) |
CA (2) | CA2577304C (ko) |
ES (1) | ES2467161T3 (ko) |
IL (1) | IL181394A (ko) |
MA (1) | MA29364B1 (ko) |
MX (2) | MX2007001909A (ko) |
PL (1) | PL1799878T3 (ko) |
PT (1) | PT1799878E (ko) |
RU (1) | RU2421418C2 (ko) |
TN (1) | TNSN07064A1 (ko) |
WO (2) | WO2006023263A2 (ko) |
ZA (1) | ZA200701374B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009111054A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Solution containment during buffer layer deposition |
WO2009111053A2 (en) | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Buffer layer deposition for thin-film solar cells |
JP5738600B2 (ja) * | 2008-03-05 | 2015-06-24 | ハナジー・ハイ−テク・パワー・(エイチケー)・リミテッド | 緩衝層蒸着のための加熱 |
WO2009111055A1 (en) | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
US9252318B2 (en) | 2008-03-05 | 2016-02-02 | Hanergy Hi-Tech Power (Hk) Limited | Solution containment during buffer layer deposition |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
MY152036A (en) * | 2008-12-08 | 2014-08-15 | Calyxo Gmbh | Thin-film deposition and recirculation of a semi-conductor material |
US20110207301A1 (en) * | 2010-02-19 | 2011-08-25 | Kormanyos Kenneth R | Atmospheric pressure chemical vapor deposition with saturation control |
DE102010028277B4 (de) | 2010-04-27 | 2013-04-18 | Calyxo Gmbh | Verfahren und Vorrichtung zur Herstellung einer mit einem Halbleitermaterial beschichteten Glasscheibe und nach dem Verfahren erhältliche Solarzelle oder Solarmodul |
WO2012083018A1 (en) * | 2010-12-17 | 2012-06-21 | First Solar, Inc. | Photovoltaic device |
WO2012158443A2 (en) | 2011-05-13 | 2012-11-22 | Sheperak Thomas J | Plasma directed electron beam wound care system apparatus and method |
DE102012102492A1 (de) | 2012-03-22 | 2013-09-26 | Calyxo Gmbh | Solarzelle mit dispergierter Halbleiterschicht |
US9324898B2 (en) | 2012-09-25 | 2016-04-26 | Alliance For Sustainable Energy, Llc | Varying cadmium telluride growth temperature during deposition to increase solar cell reliability |
TWI485276B (zh) * | 2013-12-05 | 2015-05-21 | Nat Inst Chung Shan Science & Technology | 提升硒化物薄膜成長品質之蒸鍍裝置 |
CN106319479B (zh) * | 2015-07-06 | 2018-07-13 | 北大方正集团有限公司 | 皮带定位装置及常压化学气相沉积设备 |
DE102017107836A1 (de) * | 2017-04-11 | 2018-10-11 | Calyxo Gmbh | Verfahren und Einrichtung zur Gasphasen-Abscheidung von Schichten |
RU2683177C1 (ru) * | 2017-10-05 | 2019-03-26 | Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" | Способ плазменного нанесения наноструктурированного теплозащитного покрытия |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4504526A (en) | 1983-09-26 | 1985-03-12 | Libbey-Owens-Ford Company | Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate |
US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
EP0853345B1 (en) | 1996-05-28 | 2004-02-18 | Matsushita Battery Industrial Co Ltd | METHOD FOR FORMING CdTe FILM |
JPH10303445A (ja) * | 1997-04-28 | 1998-11-13 | Matsushita Denchi Kogyo Kk | CdTe膜の製造方法とそれを用いた太陽電池 |
US6037241A (en) * | 1998-02-19 | 2000-03-14 | First Solar, Llc | Apparatus and method for depositing a semiconductor material |
JP2001223209A (ja) * | 2000-02-08 | 2001-08-17 | Seiko Epson Corp | 絶縁性,半導電性,および導電性薄膜の製造方法 |
EP1176644B1 (de) * | 2000-07-26 | 2007-12-19 | ANTEC Solar Energy AG | Verfahren zum Aktivieren von CdTe-Dünnschichtsolarzellen |
PT1433207E (pt) * | 2001-10-05 | 2009-11-24 | Solar Systems & Equioments S R | Processo para a produção em grande escala de células solares em filme fino de cdte/cds |
US7931937B2 (en) | 2005-04-26 | 2011-04-26 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7927659B2 (en) * | 2005-04-26 | 2011-04-19 | First Solar, Inc. | System and method for depositing a material on a substrate |
-
2005
- 2005-08-02 WO PCT/US2005/027371 patent/WO2006023263A2/en active Application Filing
- 2005-08-02 PL PL05782453T patent/PL1799878T3/pl unknown
- 2005-08-02 BR BRPI0514490-6A patent/BRPI0514490A/pt not_active IP Right Cessation
- 2005-08-02 EP EP05778356A patent/EP1794349A2/en not_active Withdrawn
- 2005-08-02 US US11/573,767 patent/US7674713B2/en active Active
- 2005-08-02 CN CNA2005800282435A patent/CN101432458A/zh active Pending
- 2005-08-02 JP JP2007527845A patent/JP5026971B2/ja not_active Expired - Fee Related
- 2005-08-02 MX MX2007001909A patent/MX2007001909A/es active IP Right Grant
- 2005-08-02 WO PCT/US2005/027368 patent/WO2006023262A2/en active Application Filing
- 2005-08-02 RU RU2007105817/03A patent/RU2421418C2/ru not_active IP Right Cessation
- 2005-08-02 EP EP05782453.4A patent/EP1799878B1/en not_active Not-in-force
- 2005-08-02 PT PT57824534T patent/PT1799878E/pt unknown
- 2005-08-02 JP JP2007527846A patent/JP2008514809A/ja active Pending
- 2005-08-02 KR KR1020077003864A patent/KR101119863B1/ko active IP Right Grant
- 2005-08-02 US US11/573,768 patent/US7635647B2/en not_active Expired - Fee Related
- 2005-08-02 CN CN2005800282420A patent/CN101432457B/zh not_active Expired - Fee Related
- 2005-08-02 CA CA2577304A patent/CA2577304C/en not_active Expired - Fee Related
- 2005-08-02 ES ES05782453.4T patent/ES2467161T3/es active Active
- 2005-08-02 CA CA002577307A patent/CA2577307A1/en not_active Abandoned
- 2005-08-02 MX MX2007001914A patent/MX2007001914A/es active IP Right Grant
-
2007
- 2007-02-15 TN TNP2007000064A patent/TNSN07064A1/en unknown
- 2007-02-16 ZA ZA200701374A patent/ZA200701374B/en unknown
- 2007-02-16 MA MA29682A patent/MA29364B1/fr unknown
- 2007-02-18 IL IL181394A patent/IL181394A/en not_active IP Right Cessation
-
2011
- 2011-07-15 JP JP2011156512A patent/JP2011233920A/ja not_active Abandoned
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101119863B1 (ko) | 대기압 화학 기상 증착 | |
TWI555864B (zh) | 提供硫屬元素之方法及裝置 | |
US20180323332A1 (en) | Integrated Vapor Transport Deposition Method and System | |
KR101284760B1 (ko) | 태양전지 제조용 고속 열처리 시스템 및 이를 이용한 열처리 방법 | |
EP1976022A3 (en) | Method and device for producing an anti-reflection or passivation layer for solar cells | |
US8076224B2 (en) | Thin-film deposition and recirculation of a semi-conductor material | |
JP5730215B2 (ja) | ガラスをコーティングする方法及び装置 | |
CN108603277A (zh) | 用于将CdTe-层沉积在基材上的方法 | |
US20110207301A1 (en) | Atmospheric pressure chemical vapor deposition with saturation control | |
BRPI0514490B1 (pt) | Processo para revestimento de um substrato sob pressão atmosférica | |
US9076901B2 (en) | Process and apparatus for producing a glass sheet coated with a semiconductor material | |
KR20130010291A (ko) | 셀렌화에 의한 광흡수층 제조장치 | |
RU2354006C1 (ru) | СПОСОБ ПОЛУЧЕНИЯ ТОНКОЙ ПЛЕНКИ ДИСЕЛЕНИДА МЕДИ И ИНДИЯ CuInSe2 | |
TWI430457B (zh) | 薄膜太陽能電池之前驅物預鍍層的製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20150129 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20160125 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20170120 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20180119 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20190122 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20200120 Year of fee payment: 9 |