KR101092923B1 - Solar cell and method for fabricating of the same - Google Patents
Solar cell and method for fabricating of the same Download PDFInfo
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- KR101092923B1 KR101092923B1 KR1020100018142A KR20100018142A KR101092923B1 KR 101092923 B1 KR101092923 B1 KR 101092923B1 KR 1020100018142 A KR1020100018142 A KR 1020100018142A KR 20100018142 A KR20100018142 A KR 20100018142A KR 101092923 B1 KR101092923 B1 KR 101092923B1
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- upper electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
A solar cell and a method of manufacturing the same are disclosed. Solar cell according to the invention the substrate 100; A lower electrode 200 formed on the substrate 100; A semiconductor layer 300 formed on the lower electrode 200; An upper electrode 400 formed on the semiconductor layer 300; And a light reflecting layer 500 formed on the upper electrode 400, wherein the upper electrode 400 and the light reflecting layer 500 are formed in-situ.
Description
The present invention relates to a solar cell and a method of manufacturing the same. More particularly, the present invention relates to a solar cell and a method of manufacturing the same, which can improve productivity of a solar cell manufacturing process by shortening the time required to form an upper electrode and a light reflective layer of the solar cell.
Solar cells are a key component of solar power, which converts sunlight directly into electricity, and its application ranges from space to home.
The solar cell is typically formed by stacking a substrate, a lower electrode, a semiconductor layer, an upper electrode, and a light reflecting layer in order. Here, the upper electrode is a transparent material having both conductivity and transparency because it plays a role of not only allowing the current generated in the semiconductor layer to flow to the outside but also transmitting the light reflected from the light reflection layer back into the semiconductor layer. It is usually composed of a conductive material (eg ITO). In addition, the light reflecting layer reflects the light incident from the substrate so that the light incident from the substrate moves along the longest path in the solar cell, so that the metal can effectively reflect light (eg Al , Ag).
Therefore, in general, manufacturing of a solar cell is performed by depositing a transparent conductive material on a semiconductor layer to form an upper electrode, and depositing a metal on the upper electrode to form a light reflective layer. At this time, the deposition of the transparent conductive material and the metal is mainly performed by using a physical vapor deposition method, for example, after converting the inside of the chamber from atmospheric pressure to vacuum to deposit ITO by sputtering the ITO target, and then inside the chamber in vacuum After converting to atmospheric pressure, an Al target is installed, and then the inside of the chamber is converted from atmospheric pressure to vacuum, followed by sputtering of the Al target to deposit Al.
However, according to the conventional method, it takes a long time to form the upper electrode and the light reflection layer by the process of converting from atmospheric pressure to vacuum and vacuum to atmospheric pressure, and there is a problem in that the manufacturing cost increases.
Accordingly, the present invention has been made to solve the above-described problems of the prior art, the solar cell and the solar cell that can improve the productivity of the solar cell manufacturing process by reducing the time required to form the upper electrode and the light reflection layer of the solar cell The purpose is to provide a manufacturing method.
In order to achieve the above object, the solar cell according to the present invention is a substrate; A lower electrode formed on the substrate; A semiconductor layer formed on the lower electrode; An upper electrode formed on the semiconductor layer; And a light reflecting layer formed on the upper electrode, wherein the upper electrode and the light reflecting layer are formed in-situ.
The upper electrode and the light reflection layer may be formed using a metal organic chemical vapor deposition method.
The upper electrode may be a zinc oxide (ZnO: B) layer including boron (B).
The light reflection layer may be a zinc (Zn) layer.
The zinc oxide (ZnO: B) layer including boron (B) and the zinc (Zn) source material of the zinc (Zn) layer may be DEZ (diethylzinc).
The source material of boron (B) may be B 2 H 6 .
In order to achieve the above object, a method of manufacturing a solar cell according to the present invention comprises the steps of (a) preparing a substrate; (b) forming a lower electrode on the substrate; (c) forming a semiconductor layer on the lower electrode; (d) forming an upper electrode on the semiconductor layer; And (e) forming a light reflection layer on the upper electrode, wherein steps (d) and (e) are performed in situ.
According to the present invention has an effect of improving the productivity of the solar cell manufacturing process by shortening the time required to form the upper electrode and the light reflection layer of the solar cell.
1 to 5 are views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.
DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.
DETAILED DESCRIPTION Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.
1 to 5 are views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.
First, referring to FIG. 1, the
Although not shown, a texturing process may be performed to form roughness on the surface of the
In this case, a representative texturing method may be a sand blasting method, which includes both dry blasting for spraying etched particles with compressed air and wet blasting for etching etched particles with liquid. On the other hand, the etching particles used in the sand blasting of the present invention can be used without limitation, particles that can form irregularities in the
Subsequently, an antireflection layer (not shown) may be formed on the
The method of forming the reflective ring layer may include Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and the like.
Next, referring to FIG. 2, a
The
Next, referring to FIG. 3, the p-type, n-type, or p-type, i-type, and n-
For example, in the photoelectric device, three layers of an amorphous silicon layer (not shown) may be formed. In more detail, a first amorphous silicon layer is formed on the
Subsequently, a process of crystallizing the first, second, and third amorphous silicon layers may be performed. That is, the first amorphous silicon layer is the first
Crystallization methods of the first, second, and third amorphous silicon layers include solid phase crystallization (SPC), excimer laser annealing (ELA), sequential lateral solidification (SLS), metal induced crystallization (MIC), and metal induced lateral crystallization (MILC). Can be used. Since the crystallization method of such amorphous silicon is a known technique, a detailed description thereof will be omitted herein.
In the above description, the first, second, and third amorphous silicon layers are all formed, but the crystallization is performed simultaneously. However, the present invention is not limited thereto. For example, the crystallization process may be performed separately for each amorphous silicon layer, and the two amorphous silicon layers may simultaneously undergo a crystallization process and the other amorphous silicon layer may be separately crystallized.
Meanwhile, the polycrystalline
On the other hand, in addition to p, i, and n type, the polycrystalline
In addition, although not shown, a defect removal process may be further performed to further improve the properties of the polycrystalline silicon layers 310, 320, and 330. In the present invention, the polycrystalline silicon layer may be subjected to high temperature heat treatment or hydrogen plasma treatment to remove defects (eg, impurities and dangling bonds) present in the polycrystalline silicon layer.
In addition, although not shown, another optoelectronic device may be further formed on the polycrystalline
Although not shown, a connection layer (not shown), which is a transparent conductor, may be further formed between the polycrystalline
Next, referring to FIG. 4, the
Examples of the method of forming the
The metal organic chemical vapor deposition method has an advantage that the
In addition, the metal organic chemical vapor deposition method has an advantage that the
In addition, when the
On the other hand, as the material constituting the
When the
In addition, in forming the
On the other hand, the thickness of the
Next, referring to FIG. 5, the
In the present invention, in forming the
In general, the
However, according to the present invention, since the
Meanwhile, as the method of forming the
In addition, various materials such as Al, Ag, Au, and Pt may be used as the material constituting the
In the foregoing detailed description, the present invention has been described by specific embodiments such as specific components and the like, but the embodiments and drawings are provided only to help a more general understanding of the present invention, and the present invention is limited to the above embodiments. However, one of ordinary skill in the art can make various modifications and variations from this description. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, I will say.
100: substrate
200: lower electrode
300: semiconductor layer (photoelectric element)
400: upper electrode
500: light reflection layer
Claims (12)
A lower electrode formed on the substrate;
A semiconductor layer formed on the lower electrode;
An upper electrode formed on the semiconductor layer; And
A light reflection layer formed on the upper electrode
Including,
And the upper electrode and the light reflection layer are formed in-situ.
The upper electrode and the light reflection layer is a solar cell, characterized in that formed using a metal organic chemical vapor deposition method.
The upper electrode is a solar cell, characterized in that the zinc oxide (ZnO: B) layer containing boron (B).
The light reflecting layer is a solar cell, characterized in that the zinc (Zn) layer.
The zinc oxide (ZnO: B) layer containing boron (B) and the zinc (Zn) source material of the zinc (Zn) layer are DEZ (diethylzinc) solar cell.
The source material of boron (B) is a solar cell, characterized in that B 2 H 6 .
(b) forming a lower electrode on the substrate;
(c) forming a semiconductor layer on the lower electrode;
(d) forming an upper electrode on the semiconductor layer; And
(e) forming a light reflection layer on the upper electrode
Including,
The method of manufacturing a solar cell, characterized in that the step (d) and (e) is carried out in situ.
The upper electrode and the light reflecting layer is a method of manufacturing a solar cell, characterized in that formed using a metal organic chemical vapor deposition method.
The upper electrode is a manufacturing method of a solar cell, characterized in that the zinc oxide (ZnO: B) layer containing boron (B).
The light reflecting layer is a manufacturing method of a solar cell, characterized in that the zinc (Zn) layer.
The zinc oxide (ZnO: B) layer containing the boron (B) and the zinc (Zn) source material of the zinc (Zn) layer is DEZ (diethylzinc) manufacturing method of a solar cell.
The source material of boron (B) is a manufacturing method of a solar cell, characterized in that B 2 H 6 .
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KR1020100018142A KR101092923B1 (en) | 2010-02-26 | 2010-02-26 | Solar cell and method for fabricating of the same |
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KR1020100018142A KR101092923B1 (en) | 2010-02-26 | 2010-02-26 | Solar cell and method for fabricating of the same |
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KR101092923B1 true KR101092923B1 (en) | 2011-12-12 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101388432B1 (en) | 2013-05-02 | 2014-04-25 | 한국과학기술연구원 | Se or s based thin film solar cell and method for fabricating the same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101388432B1 (en) | 2013-05-02 | 2014-04-25 | 한국과학기술연구원 | Se or s based thin film solar cell and method for fabricating the same |
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