KR101092923B1 - Solar cell and method for fabricating of the same - Google Patents

Solar cell and method for fabricating of the same Download PDF

Info

Publication number
KR101092923B1
KR101092923B1 KR1020100018142A KR20100018142A KR101092923B1 KR 101092923 B1 KR101092923 B1 KR 101092923B1 KR 1020100018142 A KR1020100018142 A KR 1020100018142A KR 20100018142 A KR20100018142 A KR 20100018142A KR 101092923 B1 KR101092923 B1 KR 101092923B1
Authority
KR
South Korea
Prior art keywords
layer
upper electrode
solar cell
substrate
zinc
Prior art date
Application number
KR1020100018142A
Other languages
Korean (ko)
Other versions
KR20110098496A (en
Inventor
허윤석
이유진
이시우
김동제
Original Assignee
주식회사 티지솔라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 티지솔라 filed Critical 주식회사 티지솔라
Priority to KR1020100018142A priority Critical patent/KR101092923B1/en
Publication of KR20110098496A publication Critical patent/KR20110098496A/en
Application granted granted Critical
Publication of KR101092923B1 publication Critical patent/KR101092923B1/en

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

A solar cell and a method of manufacturing the same are disclosed. Solar cell according to the invention the substrate 100; A lower electrode 200 formed on the substrate 100; A semiconductor layer 300 formed on the lower electrode 200; An upper electrode 400 formed on the semiconductor layer 300; And a light reflecting layer 500 formed on the upper electrode 400, wherein the upper electrode 400 and the light reflecting layer 500 are formed in-situ.

Description

SOLAR CELL AND METHOD FOR FABRICATING OF THE SAME

The present invention relates to a solar cell and a method of manufacturing the same. More particularly, the present invention relates to a solar cell and a method of manufacturing the same, which can improve productivity of a solar cell manufacturing process by shortening the time required to form an upper electrode and a light reflective layer of the solar cell.

Solar cells are a key component of solar power, which converts sunlight directly into electricity, and its application ranges from space to home.

The solar cell is typically formed by stacking a substrate, a lower electrode, a semiconductor layer, an upper electrode, and a light reflecting layer in order. Here, the upper electrode is a transparent material having both conductivity and transparency because it plays a role of not only allowing the current generated in the semiconductor layer to flow to the outside but also transmitting the light reflected from the light reflection layer back into the semiconductor layer. It is usually composed of a conductive material (eg ITO). In addition, the light reflecting layer reflects the light incident from the substrate so that the light incident from the substrate moves along the longest path in the solar cell, so that the metal can effectively reflect light (eg Al , Ag).

Therefore, in general, manufacturing of a solar cell is performed by depositing a transparent conductive material on a semiconductor layer to form an upper electrode, and depositing a metal on the upper electrode to form a light reflective layer. At this time, the deposition of the transparent conductive material and the metal is mainly performed by using a physical vapor deposition method, for example, after converting the inside of the chamber from atmospheric pressure to vacuum to deposit ITO by sputtering the ITO target, and then inside the chamber in vacuum After converting to atmospheric pressure, an Al target is installed, and then the inside of the chamber is converted from atmospheric pressure to vacuum, followed by sputtering of the Al target to deposit Al.

However, according to the conventional method, it takes a long time to form the upper electrode and the light reflection layer by the process of converting from atmospheric pressure to vacuum and vacuum to atmospheric pressure, and there is a problem in that the manufacturing cost increases.

Accordingly, the present invention has been made to solve the above-described problems of the prior art, the solar cell and the solar cell that can improve the productivity of the solar cell manufacturing process by reducing the time required to form the upper electrode and the light reflection layer of the solar cell The purpose is to provide a manufacturing method.

In order to achieve the above object, the solar cell according to the present invention is a substrate; A lower electrode formed on the substrate; A semiconductor layer formed on the lower electrode; An upper electrode formed on the semiconductor layer; And a light reflecting layer formed on the upper electrode, wherein the upper electrode and the light reflecting layer are formed in-situ.

The upper electrode and the light reflection layer may be formed using a metal organic chemical vapor deposition method.

The upper electrode may be a zinc oxide (ZnO: B) layer including boron (B).

The light reflection layer may be a zinc (Zn) layer.

The zinc oxide (ZnO: B) layer including boron (B) and the zinc (Zn) source material of the zinc (Zn) layer may be DEZ (diethylzinc).

The source material of boron (B) may be B 2 H 6 .

In order to achieve the above object, a method of manufacturing a solar cell according to the present invention comprises the steps of (a) preparing a substrate; (b) forming a lower electrode on the substrate; (c) forming a semiconductor layer on the lower electrode; (d) forming an upper electrode on the semiconductor layer; And (e) forming a light reflection layer on the upper electrode, wherein steps (d) and (e) are performed in situ.

According to the present invention has an effect of improving the productivity of the solar cell manufacturing process by shortening the time required to form the upper electrode and the light reflection layer of the solar cell.

1 to 5 are views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.

DETAILED DESCRIPTION Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

1 to 5 are views illustrating a manufacturing process of a solar cell according to an embodiment of the present invention.

First, referring to FIG. 1, the substrate 100 may be prepared. The material of the substrate 100 may be a transparent glass substrate, but is not limited thereto. According to the direction in which the solar cell receives light, transparent materials such as glass and plastic or silicon, metal [for example, stainless steel (SUS) Steel)] can be used for all opaque materials.

Although not shown, a texturing process may be performed to form roughness on the surface of the substrate 100. Texturing in the present invention is intended to prevent the phenomenon that the characteristics of the light is reduced by reflecting the light incident on the substrate surface of the solar cell is optically lost. That is, by making the surface of the board | substrate 100 rough, it means forming an uneven | corrugated pattern on the board | substrate 100 surface. As such, when the surface of the substrate 100 is roughened by texturing, the light reflected once from the surface may be reflected back toward the solar cell, thereby reducing the loss of light and increasing the amount of light trapping, thereby increasing the photoelectric conversion of the solar cell. The efficiency can be improved.

In this case, a representative texturing method may be a sand blasting method, which includes both dry blasting for spraying etched particles with compressed air and wet blasting for etching etched particles with liquid. On the other hand, the etching particles used in the sand blasting of the present invention can be used without limitation, particles that can form irregularities in the substrate 100 by physical impact, such as sand, small metal. Of course, the texturing process may be omitted if necessary.

Subsequently, an antireflection layer (not shown) may be formed on the substrate 100. The anti-reflection layer may serve to prevent a phenomenon in which solar light incident through the substrate 100 is not absorbed by the semiconductor layer (photoelectric device) 300 and immediately reflected outside, thereby degrading the efficiency of the solar cell. The material of the anti-reflection layer may be silicon oxide (SiO x ) or silicon nitride (SiN x ), but is not limited thereto. Of course, the anti-reflection layer may be omitted as necessary.

The method of forming the reflective ring layer may include Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and the like.

Next, referring to FIG. 2, a lower electrode 200 of a conductive material may be formed on the substrate 100. For example, a transparent conductive oxide (TCO), which is a transparent electrode having a low contact resistance and having a transparent property, may be used. The lower electrode 200 may be doped with a predetermined impurity in a metal oxide to perform a function of an electrode. . The metal oxide may be any one of a Zn oxide, a Sn oxide, an In oxide, a Cd oxide, a Ga oxide, and an Al oxide. The impurity may be any one of B, Al, Ga, In, C, Si, Ge, Sn, Pb, and Ti, but the present invention is not limited thereto. For example, when the impurities are doped in Zn-based metal oxides, ZnO: B, ZnO: Al, ZnO: Ga, ZnO: In, ZnO: C, ZnO: Si, ZnO: Ge, ZnO: Sn, ZnO: Pb, ZnO: Ti can be any one of the transparent electrode having a conductivity while transmitting light.

The lower electrode 200 may be formed using physical vapor deposition (PVD), LPCVD, PECVD, metal organic compounds, such as thermal evaporation, e-beam evaporation, and sputtering. Chemical Vapor Deposition (CVD), such as Metal Organic Chemical Vapor Deposition (MOCVD).

Next, referring to FIG. 3, the p-type, n-type, or p-type, i-type, and n-type semiconductor layers 300 may be stacked on the lower electrode 200. , i-type and n-type silicon layers can be formed in this order. Such a silicon layer may be formed by a CVD method such as PECVD or LPCVD, and the silicon layer may perform a function of receiving light by a subsequent process to produce power and thus refers to an optoelectronic device in terms of functionality.

For example, in the photoelectric device, three layers of an amorphous silicon layer (not shown) may be formed. In more detail, a first amorphous silicon layer is formed on the lower electrode 200, a second amorphous silicon layer is formed on the first amorphous silicon layer, and a third amorphous silicon layer is then formed on the second amorphous silicon layer. To form an amorphous optoelectronic device. In this case, the first, second and third amorphous silicon layers may be formed using a CVD method such as PECVD or LPCVD.

Subsequently, a process of crystallizing the first, second, and third amorphous silicon layers may be performed. That is, the first amorphous silicon layer is the first polycrystalline silicon layer 310, the second amorphous silicon layer is the second polycrystalline silicon layer 320, and the third amorphous silicon layer is the third polycrystalline silicon layer 330, respectively. Can be crystallized. As a result, as shown in FIG. 6, the polycrystalline optoelectronic device 300 including the first, second, and third polycrystalline silicon layers 310, 320, and 330 may be formed.

Crystallization methods of the first, second, and third amorphous silicon layers include solid phase crystallization (SPC), excimer laser annealing (ELA), sequential lateral solidification (SLS), metal induced crystallization (MIC), and metal induced lateral crystallization (MILC). Can be used. Since the crystallization method of such amorphous silicon is a known technique, a detailed description thereof will be omitted herein.

In the above description, the first, second, and third amorphous silicon layers are all formed, but the crystallization is performed simultaneously. However, the present invention is not limited thereto. For example, the crystallization process may be performed separately for each amorphous silicon layer, and the two amorphous silicon layers may simultaneously undergo a crystallization process and the other amorphous silicon layer may be separately crystallized.

Meanwhile, the polycrystalline optoelectronic device 300 may have a structure of a p-i-n diode in which p-type, i-type, and n-type polycrystalline silicon layers, which may generate power with photovoltaic power generated by receiving light, are sequentially stacked. Where i means intrinsic without impurities. In addition, in the n-type or p-type doping, it is preferable to dope the impurities in situ when forming the amorphous silicon layer. It is common to use boron (B) as an impurity in P-type doping and phosphorus (P) or arsenic (As) as an impurity in n-type doping, but it is not limited to this, and well-known techniques can be used without limitation.

On the other hand, in addition to p, i, and n type, the polycrystalline photoelectric device 300 is p +, i, n + type, n, i, p type (especially n +, i, p +), p, n, n type (especially p +, p-, n +) or n, n, p-type (especially n +, n-, p +) silicon layers. Here, the meaning of + and-represents a relative difference in doping concentration, and means that + has a higher concentration of doping than-. For example, n + is higher doped than n−. If there is no indication of + or-, there is no particular restriction on the doping concentration. In addition, the semiconductor layer located between p and n type functions as a light absorbing layer (for example, i type).

In addition, although not shown, a defect removal process may be further performed to further improve the properties of the polycrystalline silicon layers 310, 320, and 330. In the present invention, the polycrystalline silicon layer may be subjected to high temperature heat treatment or hydrogen plasma treatment to remove defects (eg, impurities and dangling bonds) present in the polycrystalline silicon layer.

In addition, although not shown, another optoelectronic device may be further formed on the polycrystalline optoelectronic device 300 including the first, second, and third polycrystalline silicon layers 310, 320, and 330 described above. The other optoelectronic device may be an amorphous optoelectronic device in which first, second and third amorphous silicon layers are stacked. As such, in an embodiment of the present invention, the optoelectronic device may be formed in a stacked structure (tandem structure), which may mean a multi-junction structure in which the optoelectronic device is stacked in three or more layers.

Although not shown, a connection layer (not shown), which is a transparent conductor, may be further formed between the polycrystalline optoelectronic device 310 and the amorphous optoelectronic device (not shown). The connection layer allows a tunnel junction between the polycrystalline optoelectronic device 310 and an amorphous optoelectronic device (not shown), thereby improving the photoelectric conversion efficiency of the solar cell. The connection layer is preferably AZO (ZnO: Al) in which a small amount of Al is added to ZnO, but is not limited thereto. A transparent conductive material such as ITO, ZnO, IZO, and FSO (SnO: F) may be used without particular limitation. Can be.

Next, referring to FIG. 4, the upper electrode 400 is formed on the semiconductor layer 300. The upper electrode 400 basically serves to flow the current generated in the semiconductor layer 300 together with the lower electrode 200 to the outside, that is, may serve as an electrode. In addition, by providing a path through which the light reflected from the light reflecting layer 500 can be transmitted back into the semiconductor layer 300, the light incident to the solar cell moves along the longest path in the solar cell. Can be performed.

Examples of the method of forming the upper electrode 400 include physical vapor deposition (PVD), low pressure chemical vapor deposition, and the like, such as thermal evaporation, e-beam evaporation, sputtering, and the like. Various vapor deposition methods such as Low Pressure Chemical Vapor Deposition (LPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) may be used. Organic Organic Vapor Deposition (MOCVD) may be used.

The metal organic chemical vapor deposition method has an advantage that the upper electrode 400 can be formed on the semiconductor layer 300 at a very high speed. In this sense, when the metal organic chemical vapor deposition method is used, the time for forming the upper electrode 400 on the semiconductor layer 300 is preferably about 2 minutes to 10 minutes.

In addition, the metal organic chemical vapor deposition method has an advantage that the upper electrode 400 can be formed on the semiconductor layer 300 under a wide pressure condition. Therefore, in the case of using the metal organic chemical vapor deposition method, in order to form the upper electrode 400 more quickly and uniformly, forming the upper electrode 400 on the semiconductor layer 300 at a low pressure of 0.1 torr to 1 torr. It may be desirable.

In addition, when the upper electrode 400 is formed by a metal organic chemical vapor deposition method, the substrate 100 needs to be heated to a predetermined temperature. The temperature of the substrate 100 is preferably 100 ° C. to 200 ° C. in consideration of smooth growth and productivity of the material constituting the upper electrode 400 on the substrate 100.

On the other hand, as the material constituting the upper electrode 400, materials such as ITO, ZnO, IZO (ZnO: In), AZO (ZnO: Al), GZO (ZnO: Ga), FSO (SnO: F) may be used. However, preferably zinc oxide containing boron (hereinafter referred to as BZO) may be used. Since BZO has a predetermined conductivity and transparency, the BZO may be suitable to be used as a material constituting the upper electrode 400 of the present invention.

When the upper electrode 400 made of BZO is formed by using the metal organic chemical vapor deposition method described above, various materials may be used as source materials of zinc, oxygen, and boron included in the BZO. Is DEZ (diethylzinc), H 2 O as the source material of oxygen, B 2 H 6 is preferably used as the source material of boron. In this case, even at room temperature, the upper electrode 400 made of BZO can be smoothly formed. For example, in a state in which the temperature of the substrate 100 is raised to a temperature of about 100 ° C. to 200 ° C., the upper electrode composed of BZO by supplying DEZ, H 2 O, and B 2 H 6 at room temperature to the substrate 100. 400 may be formed.

In addition, in forming the upper electrode 400 using a metal organic chemical vapor deposition method, a carrier gas for transporting source materials may be used. Argon (Ar) or nitrogen (N 2 ) is preferably used as the carrier gas, but is not necessarily limited thereto.

On the other hand, the thickness of the upper electrode 400 needs to be considered important because it affects its transmittance or electrical conductivity. In this sense, the thickness of the upper electrode 400 is preferably a thickness capable of optimizing the transmittance or electrical conductivity of the upper electrode 400. This thickness may be 0.5um to 3um.

Next, referring to FIG. 5, the light reflection layer 500 is formed on the upper electrode 400. The light reflection layer 500 may perform a function of reflecting light incident from the substrate to move the light incident from the substrate while having the longest path in the solar cell. Accordingly, since a greater amount of light may be incident into the semiconductor layer 300, the photoelectric conversion efficiency of the solar cell may be improved.

In the present invention, in forming the light reflecting layer 500, the upper electrode 400 and the light reflecting layer 500 is characterized in that it is characterized in that (in-situ). Various methods may be used to form the upper electrode 4000 and the light reflection layer 500 in-situ, for example, DEZ, H 2 O, B 2 H 6 on the semiconductor layer 300 in a single chamber. To form an upper electrode 400 made of BZO, and subsequently, a method of forming a light reflective layer 500 made of zinc by continuously supplying only DEZ on the upper electrode 400.

In general, the light reflection layer 500 is formed by sputtering aluminum or silver. In other words, an inert gas such as argon (Ar) is collided with a source target made of a metal such as aluminum or silver in the vacuum chamber to form the light reflection layer 500. In this case, a great inefficiency may be caused in forming the light reflection layer 500. For example, the efficient formation of the upper electrode 400 such as BZO may be performed by using a metal organic chemical vapor deposition method in a substantially vacuum state as described above, and the formation of the light reflection layer 500 which is a subsequent process Since the silver is made by sputtering aluminum or silver in a vacuum state, it may cause inefficiency of forming the upper electrode 400 in one chamber and forming a light reflection layer in another chamber. In this case, the upper electrode 400 may be exposed to the air inevitably, and particles or foreign matter may be attached to the upper electrode 400, and the upper electrode 400 and the light reflection layer 500 are formed. There is a problem in that it takes a lot of time to increase the manufacturing cost.

However, according to the present invention, since the upper electrode 400 and the light reflection layer 500 can be formed in situ as described above, there is an advantage that the above problems do not occur.

Meanwhile, as the method of forming the light reflection layer 500, various deposition methods may be used similarly to the upper electrode 400, but preferably the same metal organic chemical vapor deposition method as the method of forming the upper electrode 400 may be used. Can be. In this case, the manufacturing conditions, temperature, pressure, time, etc. of the light reflection layer 500 may be variously changed according to the purpose of using the present invention.

In addition, various materials such as Al, Ag, Au, and Pt may be used as the material constituting the light reflection layer 500, but preferably, zinc (Zn) may be used. As mentioned above, it is preferable that the light reflecting layer 500 of the solar cell is made of a metal having a high reflectance of light. In this sense, zinc is suitable to be used as a material constituting the light reflecting layer 500 of the present invention. can do. When the metal organic chemical vapor deposition method is used to form the light reflection layer 500 with zinc, the above-mentioned DEZ (diethylzinc) may be used as the source material of zinc included in the light reflection layer 500.

In the foregoing detailed description, the present invention has been described by specific embodiments such as specific components and the like, but the embodiments and drawings are provided only to help a more general understanding of the present invention, and the present invention is limited to the above embodiments. However, one of ordinary skill in the art can make various modifications and variations from this description. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, I will say.

100: substrate
200: lower electrode
300: semiconductor layer (photoelectric element)
400: upper electrode
500: light reflection layer

Claims (12)

Board;
A lower electrode formed on the substrate;
A semiconductor layer formed on the lower electrode;
An upper electrode formed on the semiconductor layer; And
A light reflection layer formed on the upper electrode
Including,
And the upper electrode and the light reflection layer are formed in-situ. The method of claim 1,
The upper electrode and the light reflection layer is a solar cell, characterized in that formed using a metal organic chemical vapor deposition method. The method of claim 2,
The upper electrode is a solar cell, characterized in that the zinc oxide (ZnO: B) layer containing boron (B). The method of claim 3,
The light reflecting layer is a solar cell, characterized in that the zinc (Zn) layer. The method of claim 4, wherein
The zinc oxide (ZnO: B) layer containing boron (B) and the zinc (Zn) source material of the zinc (Zn) layer are DEZ (diethylzinc) solar cell. The method of claim 3,
The source material of boron (B) is a solar cell, characterized in that B 2 H 6 . (a) preparing a substrate;
(b) forming a lower electrode on the substrate;
(c) forming a semiconductor layer on the lower electrode;
(d) forming an upper electrode on the semiconductor layer; And
(e) forming a light reflection layer on the upper electrode
Including,
The method of manufacturing a solar cell, characterized in that the step (d) and (e) is carried out in situ. The method of claim 7, wherein
The upper electrode and the light reflecting layer is a method of manufacturing a solar cell, characterized in that formed using a metal organic chemical vapor deposition method. The method of claim 8,
The upper electrode is a manufacturing method of a solar cell, characterized in that the zinc oxide (ZnO: B) layer containing boron (B). 10. The method of claim 9,
The light reflecting layer is a manufacturing method of a solar cell, characterized in that the zinc (Zn) layer. The method of claim 10,
The zinc oxide (ZnO: B) layer containing the boron (B) and the zinc (Zn) source material of the zinc (Zn) layer is DEZ (diethylzinc) manufacturing method of a solar cell. 10. The method of claim 9,
The source material of boron (B) is a manufacturing method of a solar cell, characterized in that B 2 H 6 .
KR1020100018142A 2010-02-26 2010-02-26 Solar cell and method for fabricating of the same KR101092923B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100018142A KR101092923B1 (en) 2010-02-26 2010-02-26 Solar cell and method for fabricating of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100018142A KR101092923B1 (en) 2010-02-26 2010-02-26 Solar cell and method for fabricating of the same

Publications (2)

Publication Number Publication Date
KR20110098496A KR20110098496A (en) 2011-09-01
KR101092923B1 true KR101092923B1 (en) 2011-12-12

Family

ID=44952033

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100018142A KR101092923B1 (en) 2010-02-26 2010-02-26 Solar cell and method for fabricating of the same

Country Status (1)

Country Link
KR (1) KR101092923B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101388432B1 (en) 2013-05-02 2014-04-25 한국과학기술연구원 Se or s based thin film solar cell and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101388432B1 (en) 2013-05-02 2014-04-25 한국과학기술연구원 Se or s based thin film solar cell and method for fabricating the same

Also Published As

Publication number Publication date
KR20110098496A (en) 2011-09-01

Similar Documents

Publication Publication Date Title
CN109004053B (en) Crystalline silicon/thin film silicon heterojunction solar cell with double-sided light receiving function and manufacturing method thereof
EP2110859B1 (en) Laminate type photoelectric converter and method for fabricating the same
US7863075B2 (en) Method for manufacturing solar cell
EP2408023A1 (en) Thin-film Solar Fabrication Process, Deposition method for TCO layer, and Solar cell precursor layer stack
KR101897723B1 (en) Photovoltaic device and manufacturing method thereof
EP2439792A1 (en) Thin-film solar cell fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
US20120031479A1 (en) Thin film solar fabrication process, deposition method for tco layer, and solar cell precursor layer stack
KR101092922B1 (en) Solar cell including color layer
EP2426737A1 (en) Thin-film solar fabrication process, deposition method for solar cell precursor layer stack, and solar cell precursor layer stack
US20100229934A1 (en) Solar cell and method for the same
KR101047170B1 (en) Solar cell and manufacturing method
WO2011136177A1 (en) Thin film solar cell and method for manufacturing same, and base with transparent conductive film and method for producing same
KR101092923B1 (en) Solar cell and method for fabricating of the same
KR101065749B1 (en) Solar cell and method for fabricating the same
KR20110078998A (en) Method for hydrogen passivation of silicon layer in solar cell
KR20110076398A (en) Solar cell including barrier layer and method for fabricating of the same
KR101626364B1 (en) Thin film solar cell and method for fabricaitng the same
KR101640815B1 (en) Thin film solar cell and method for fabricaitng the same
KR101026125B1 (en) Solar cell using electrode including impurity and method for fabricating the same
KR20100116833A (en) Solar cell including metallic silicide layer and method for fabricating the same
KR101084652B1 (en) Stacked solar cell crystallized using microcrystalline semiconductor layer and method for fabricating the same
KR101084650B1 (en) Solar cell crystallized using microcrystalline semiconductor layer and method for fabricating the same
KR101002700B1 (en) Solar Cell and Method For Fabricating The Same
KR101458193B1 (en) Method for fabricating solar cell using diffusion blocking layer
KR101072531B1 (en) Solar cell and method for fabricating the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20141024

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20151020

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee