KR101059992B1 - 발광 소자 - Google Patents
발광 소자 Download PDFInfo
- Publication number
- KR101059992B1 KR101059992B1 KR1020060005283A KR20060005283A KR101059992B1 KR 101059992 B1 KR101059992 B1 KR 101059992B1 KR 1020060005283 A KR1020060005283 A KR 1020060005283A KR 20060005283 A KR20060005283 A KR 20060005283A KR 101059992 B1 KR101059992 B1 KR 101059992B1
- Authority
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- South Korea
- Prior art keywords
- light emitting
- layer
- delete delete
- emitting device
- adhesive layer
- Prior art date
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- 239000012790 adhesive layer Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 114
- 239000004065 semiconductor Substances 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 11
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000000605 extraction Methods 0.000 description 9
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 8
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 8
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 8
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 6
- 230000001965 increasing effect Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Facsimile Heads (AREA)
Abstract
Description
Claims (28)
- 투명 기판;상기 투명 기판 상부에 배치되며 제1 확산 표면을 포함하는 발광 적층체; 및상기 투명 기판과 상기 제1 확산 표면 사이에 배치되는 투명 접착층을 포함하며, 상기 발광 적층체의 굴절률이 상기 투명 접착층의 굴절률과 다른 것을 특징으로 하는 발광 소자.
- 제 1 항에 있어서, 상기 투명 접착층은 폴리이미드(polyimide), 벤조싸이클로부텐(benzocyclobutene; BCB), 프리플루오르싸이클로부탄(prefluorocyclobutane; PFCB) 및 인듐 주석 산화물로 이루어지는 그룹으로부터 선택된 물질을 포함하는 것을 특징으로 하는 발광 소자.
- 제 1 항에 있어서, 상기 제1 확산 표면은 거친 표면을 가지는 것을 특징으로 하는 발광 소자.
- 제 3 항에 있어서, 상기 거친 표면은 복수의 미세 돌출부들 또는 요철 (convex-concave) 표면을 포함하는 것을 특징으로 하는 발광 소자.
- 제 4 항에 있어서, 상기 미세 돌출부들은 반구형, 피라미드형, 다각뿔형 및 이들의 조합으로 이루어지는 그룹으로부터 선택된 형상을 가지는 것을 특징으로 하는 발광 소자.
- 제 1 항에 있어서, 상기 발광 적층체는,상기 투명 기판 상부에 배치되며 상기 제1 확산 표면을 갖는 제1 반도체층;상기 제1 반도체층의 일부 상에 배치되는 발광층; 및상기 발광층 상에 배치되는 제2 반도체층을 포함하는 것을 특징으로 하는 발광 소자.
- 제 6 항에 있어서, 상기 제2 반도체층은 제2 확산 표면을 가지는 것을 특징으로 하는 발광 소자.
- 제 1 항에 있어서, 제1 반응층 및 제2 반응층을 더 포함하며, 상기 제1 반응층은 상기 투명 기판 및 상기 투명 접착층 사이에 배치되고, 상기 제2 반응층은 상기 투명 접착층 및 상기 발광 적층체 사이에 배치되는 것을 특징으로 하는 발광 소자.
- 제 8 항에 있어서, 상기 제1 확산 표면 또는 제2 확산 표면은 복수의 미세 돌출부들을 포함하며, 상기 제2 반응층은 상기 투명 접착층을 관통하는 돌출부로 인하여 상기 제1 반응층과 오믹 콘택(ohmic contact)을 형성하는 것을 특징으로 하는 발광 소자.
- 제 9 항에 있어서, 상기 미세 돌출부들은 반구형, 피라미드형, 다각뿔형 및 이들의 조합으로 이루어지는 그룹으로부터 선택된 형상을 갖는 것을 특징으로 하는 발광 소자.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094102193A TWI330413B (en) | 2005-01-25 | 2005-01-25 | A light-emitting device |
TW094102193 | 2005-01-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060086272A KR20060086272A (ko) | 2006-07-31 |
KR101059992B1 true KR101059992B1 (ko) | 2011-08-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060005283A KR101059992B1 (ko) | 2005-01-25 | 2006-01-18 | 발광 소자 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7489068B2 (ko) |
JP (1) | JP5008308B2 (ko) |
KR (1) | KR101059992B1 (ko) |
DE (1) | DE102006002683B4 (ko) |
TW (1) | TWI330413B (ko) |
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TW200905928A (en) * | 2007-03-29 | 2009-02-01 | Univ California | Dual surface-roughened N-face high-brightness LED |
EP2017898A1 (en) * | 2007-07-17 | 2009-01-21 | Vishay Israel Ltd. | Semiconductor light-emitting device and method for the manufacture thereof |
KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102007060204B4 (de) * | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
TWI349221B (en) * | 2008-02-05 | 2011-09-21 | Au Optronics Corp | Sensing structure of a display |
US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
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CN108269756A (zh) * | 2011-08-30 | 2018-07-10 | 皇家飞利浦有限公司 | 将衬底接合到半导体发光器件的方法 |
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KR101662202B1 (ko) * | 2013-10-01 | 2016-10-04 | 광주과학기술원 | 발광 다이오드 |
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KR20160024170A (ko) | 2014-08-25 | 2016-03-04 | 삼성전자주식회사 | 반도체 발광 소자 |
US11543083B2 (en) | 2014-09-28 | 2023-01-03 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
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JP6668608B2 (ja) * | 2015-04-27 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2017147364A (ja) * | 2016-02-18 | 2017-08-24 | 株式会社東芝 | 半導体モジュール |
US10833222B2 (en) * | 2016-08-26 | 2020-11-10 | The Penn State Research Foundation | High light extraction efficiency (LEE) light emitting diode (LED) |
JP2018148094A (ja) * | 2017-03-07 | 2018-09-20 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
JP2019212875A (ja) * | 2018-06-08 | 2019-12-12 | 信越半導体株式会社 | 発光素子及び発光素子の製造方法 |
KR102325791B1 (ko) * | 2019-12-05 | 2021-11-12 | 웨이브로드 주식회사 | 반도체 발광소자 |
JP7011195B2 (ja) * | 2020-02-27 | 2022-01-26 | 日亜化学工業株式会社 | 発光装置 |
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2005
- 2005-01-25 TW TW094102193A patent/TWI330413B/zh active
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2006
- 2006-01-06 US US11/326,750 patent/US7489068B2/en active Active
- 2006-01-18 KR KR1020060005283A patent/KR101059992B1/ko active IP Right Grant
- 2006-01-19 DE DE102006002683.7A patent/DE102006002683B4/de active Active
- 2006-01-23 JP JP2006014122A patent/JP5008308B2/ja active Active
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Also Published As
Publication number | Publication date |
---|---|
DE102006002683A1 (de) | 2006-08-03 |
JP2006210916A (ja) | 2006-08-10 |
US7489068B2 (en) | 2009-02-10 |
US20060163595A1 (en) | 2006-07-27 |
DE102006002683B4 (de) | 2019-10-17 |
KR20060086272A (ko) | 2006-07-31 |
TW200627668A (en) | 2006-08-01 |
JP5008308B2 (ja) | 2012-08-22 |
TWI330413B (en) | 2010-09-11 |
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