KR101039939B1 - 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템 - Google Patents
발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템 Download PDFInfo
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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Abstract
실시예에 따른 발광소자는 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하는 발광구조물; 상기 발광구조물 상면 일부에 제1 유전체층; 및 상기 제1 유전체층 상에 패드 전극;을 포함한다.
Description
도 2는 실시예에 따른 발광소자의 정전기 방전시의 전기장 형성 개념도.
도 3는 실시예에 따른 발광소자의 회로 예시도.
도 4은 실시예에 따른 발광소자의 정전기 방전시의 파형도.
도 5 내지 도 7은 실시예에 따른 발광소자의 제조방법의 공정 단면도.
도 8은 실시예에 따른 발광소자 패키지 단면도.
도 9는 실시예에 따른 조명 유닛의 사시도.
도 10은 실시예에 따른 백라이트 유닛의 분해 사시도.
Claims (11)
- 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하는 발광구조물;
상기 발광구조물 상면 에지부에 형성된 제1 유전체층;
상기 발광구조물의 측면에 형성된 제2 유전체층;
상기 제1 유전체층 상에 형성된 패드 전극;
상기 발광구조물 상면에 접하여 형성된 제1 전극; 및
상기 발광구조물 하면 상에 형성된 제2 전극층;을 포함하고,
상기 패드 전극의 저면은 상기 제1 유전체층의 상면과 전체적으로 접하며,
상기 패드 전극과 상기 제1 전극은 전기적으로 연결되며,
상기 제1 유전체층과 상기 제2 유전체층은 연결되며,
상기 제2 전극층은 상기 제2 유전체층과 연결되는 발광소자. - 제1 항에 있어서,
상기 제1 전극의 수직 아래 영역에 형성된 전류차단층을 더 포함하는 발광소자. - 제1 항에 있어서,
상기 제1 전극은 상기 발광구조물 상면의 중심부와 접하여 형성된 발광소자. - 삭제
- 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 포함하는 발광구조물을 형성하는 단계;
상기 발광구조물 하면 상에 제2 전극층을 형성하는 단계;
상기 발광구조물 상면 에지부에 제1 유전체층을 형성하는 단계;
상기 제1 유전체층 상에 패드 전극을 형성하는 단계;
상기 발광구조물 상면과 접하도록 제1 전극을 형성하는 단계; 및
상기 발광구조물의 측면에 제2 유전체층을 포함하고, 상기 제1 유전체층과 상기 제2 유전체층은 연결되며,
상기 패드 전극의 저면은 상기 제1 유전체층의 상면과 전체적으로 접하며,
상기 패드 전극과 상기 제1 전극은 전기적으로 연결되며,
상기 제2 전극층은 상기 제2 유전체층과 연결되는 발광소자의 제조방법. - 제5 항에 있어서,
상기 제1 전극의 수직 아래 영역에 전류차단층을 형성하는 단계를 더 포함하는 발광소자의 제조방법. - 제5 항에 있어서,
상기 제1 전극은 상기 발광구조물 상면의 중심부와 접하도록 형성되는 발광소자의 제조방법. - 삭제
- 삭제
- 패키지 몸체;
상기 패키지 몸체 상에 배치되는 제1 항 내지 제3 항 중 어느 한 항의 발광소자; 및
상기 패키지 몸체와 상기 발광소자를 전기적으로 연결하는 전극;을 포함하는 발광소자 패키지. - 제10항의 발광소자 패키지를 구비하는 발광모듈부를 포함하는 조명시스템.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20100039595A KR101039939B1 (ko) | 2010-04-28 | 2010-04-28 | 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 이를 포함하는 조명시스템 |
US12/943,603 US8362514B2 (en) | 2010-04-28 | 2010-11-10 | Vertical semiconductor light emitting device including a capacitor |
EP10193474.3A EP2383804B1 (en) | 2010-04-28 | 2010-12-02 | Light emitting device, light emitting device package and lighting system |
CN201010621726.9A CN102237462B (zh) | 2010-04-28 | 2010-12-29 | 发光器件、发光器件封装、以及照明*** |
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CN102644888A (zh) * | 2012-04-01 | 2012-08-22 | 深圳市华星光电技术有限公司 | 带静电防护功能的led灯及用该led灯的背光模组 |
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US9433040B2 (en) * | 2013-06-14 | 2016-08-30 | Micron Technology, Inc. | Light-emitting metal-oxide-semiconductor devices and associated systems, devices, and methods |
TWI637534B (zh) | 2013-11-29 | 2018-10-01 | 晶元光電股份有限公司 | 發光裝置 |
KR102311687B1 (ko) * | 2015-06-03 | 2021-10-12 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
CN108110106B (zh) * | 2017-12-14 | 2019-08-27 | 扬州乾照光电有限公司 | 一种led芯片的制备方法及led芯片 |
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EP2383804A1 (en) | 2011-11-02 |
US20110266585A1 (en) | 2011-11-03 |
US8362514B2 (en) | 2013-01-29 |
CN102237462B (zh) | 2016-08-03 |
EP2383804B1 (en) | 2019-10-02 |
CN102237462A (zh) | 2011-11-09 |
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